JPS63317664A - Sputtering cathode - Google Patents
Sputtering cathodeInfo
- Publication number
- JPS63317664A JPS63317664A JP15131287A JP15131287A JPS63317664A JP S63317664 A JPS63317664 A JP S63317664A JP 15131287 A JP15131287 A JP 15131287A JP 15131287 A JP15131287 A JP 15131287A JP S63317664 A JPS63317664 A JP S63317664A
- Authority
- JP
- Japan
- Prior art keywords
- target
- guide
- magnetic
- magnets
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 16
- 238000012856 packing Methods 0.000 claims description 14
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- XWHPIFXRKKHEKR-UHFFFAOYSA-N iron silicon Chemical compound [Si].[Fe] XWHPIFXRKKHEKR-UHFFFAOYSA-N 0.000 abstract description 2
- 230000035699 permeability Effects 0.000 abstract 1
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- -1 argon cations Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、真空内で薄膜を形成するためのス、＜ツタリ
ング装置の改良に係り、ターゲットの使用効率を向上し
たスパッタリングカソードに関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an improvement in a sputtering device for forming thin films in a vacuum, and relates to a sputtering cathode with improved target usage efficiency.
従来の技術
スパッタリングは、アルゴンの陽イオンＡｒ”を負電位
のターゲットへ電界加速後、衝突させ、ターゲット原子
をたたき出して、基板に堆積させることで薄膜を形成す
る方法である。Conventional sputtering is a method of forming a thin film by accelerating argon cations Ar'' against a target at a negative potential by an electric field, colliding them, knocking out target atoms, and depositing them on a substrate.
第５図に示すように、無酸素銅で作られたノイ・ンキン
グプレート１の平らな主面にターゲット３が接着され、
パッキングプレート１の裏面にはマグネット４が取り付
けである。マグネット４は、ターゲット３表面および直
上に磁界を発生させるためのものであり、この磁界によ
り、スパッタリング時の放電中の電子をマグネトロン運
動させしめ、＾ｒ゛のイオン化を効率良くする。As shown in FIG. 5, a target 3 is bonded to the flat main surface of a noise-inking plate 1 made of oxygen-free copper.
A magnet 4 is attached to the back surface of the packing plate 1. The magnet 4 is used to generate a magnetic field on the surface of the target 3 and directly above it, and this magnetic field causes the electrons being discharged during sputtering to undergo magnetron motion, thereby improving the efficiency of ionization of ^r.
発明が解決しようとする問題点
パッキングプレート１の裏面のマグネット４からの漏え
い磁界を利用して、スパッタリングを行なう際に、Ｎ極
マグネットとＳ極マグネットの中央部のターゲット３表
面の磁界強度が最も大きくなるため、その中央部のター
ゲット３を中心にスパッタリングし、エロージョンが進
行し、深く掘られる。その結果、第６図に示す破線のよ
うにターゲット３は局部的に消耗し、中央部のターゲッ
ト３が真先になくなり、他の部分が残っていても、ター
ゲット３を交換しなければならなかった。このため、タ
ーゲット３の使用効率は、せいぜい、２０％位で、特に
高価な材料でスパッタリング成膜を行なう場合、コスト
的に大きな問題があった。Problems to be Solved by the Invention When performing sputtering using the leakage magnetic field from the magnet 4 on the back side of the packing plate 1, the magnetic field strength on the surface of the target 3 at the center of the N-pole magnet and the S-pole magnet is the highest. As it becomes larger, sputtering occurs around the target 3 in the center, erosion progresses, and it is dug deeply. As a result, the target 3 is locally worn out as shown by the broken line in Figure 6, and the central target 3 is the first to disappear, and even if other parts remain, the target 3 must be replaced. Ta. For this reason, the usage efficiency of the target 3 is about 20% at most, which poses a major problem in terms of cost, especially when performing sputtering film formation using expensive materials.
本発明は、エローシコンを広くし、ターゲットの使用効
率を高めることを目的とする。The purpose of the present invention is to widen the erosicon and improve target usage efficiency.
問題点を解決するための手段
本発明は、磁力線ガイドが磁極面に対向してパッキング
プレート主面にターゲットの方向に延在して配設されて
いることを特徴とするマグネトロンスパッタリング装置
のスパッタリングカソードである。Means for Solving the Problems The present invention provides a sputtering cathode for a magnetron sputtering apparatus, characterized in that a magnetic line of force guide is disposed on the main surface of the packing plate facing the magnetic pole surface and extending in the direction of the target. It is.
磁力線ガイドの材料は磁界において磁化される性質を有
し、磁力線を誘導する能力の大きいいわゆる高ｉ３磁性
のものが好ましく、たとえば純鉄、パーマロイ、珪素鉄
などの鉄系材料が挙げられる。The material of the magnetic line of force guide is preferably a so-called high i3 magnetic material that has the property of being magnetized in a magnetic field and has a large ability to guide magnetic lines of force, such as iron-based materials such as pure iron, permalloy, and silicon iron.
磁力線ガイドの形状は、断面が、概略、長方形でマグネ
ットの配置に対応して壁状に形成され、パッキングプレ
ート主面上の高さは、ターゲット表面上の磁界をターゲ
ツト面に平行に近づけるために、高目に設定され、その
根元はパッキングプレートに、適宜、取りつけられるが
、マグネットにできるだけ近づけることが好ましい。更
に、ターゲット表面上の磁界をターゲツト面に平行にす
るために、ターゲットに接する磁力線ガイドは側面に勾
配をつけて先細状に形成されることが好ましい。The shape of the magnetic field line guide is roughly rectangular in cross section, and it is formed into a wall shape corresponding to the arrangement of the magnets, and the height above the main surface of the packing plate is set so that the magnetic field on the target surface approaches parallel to the target surface. , is set high, and its base is attached to the packing plate as appropriate, preferably as close to the magnet as possible. Further, in order to make the magnetic field on the target surface parallel to the target surface, the magnetic field line guide in contact with the target is preferably formed into a tapered shape with a sloped side surface.
なおターゲットはパッキングプレートおよび磁力線ガイ
ドとの間に隙間なく設けられる。Note that the target is provided without any gap between the packing plate and the magnetic field line guide.
作用
ターゲット表面上の磁界がターゲツト面により平行にな
り、ターゲット表面上の磁界強度分布はより均一になり
、マグネトロン運動している電子密度が均一になり、従
って、マグネトロン電子とアルゴンの衝突により発生す
るＡｒ”イオンの密度も均一になるため、スパッタリン
グは、ターゲ・ント表面で均一に行なわれる。The magnetic field on the working target surface will be more parallel to the target plane, the magnetic field strength distribution on the target surface will be more uniform, and the density of electrons moving in the magnetron will be uniform, so the collision between the magnetron electrons and argon will occur. Since the density of Ar'' ions is also uniform, sputtering is performed uniformly on the target surface.
実施例
第１図第２Ａ、Ｂ図および第３Ａ、Ｂ図において、本発
明の関連要部は真空槽９に格納されている。磁界を設定
するマグネット４は中央部分および周辺に配設されてい
る。中央部分のマグネット４はＮ、極が上部にＳ極が下
部にある。逆に周辺のマグネット４はＳ極が上部にＮ極
が下部にある。Embodiment In FIG. 1, FIGS. 2A and 2B, and FIGS. 3A and 3B, the main parts related to the present invention are stored in a vacuum chamber 9. Magnets 4 for setting a magnetic field are arranged at the center and around the periphery. The magnet 4 in the center has an N pole at the top and an S pole at the bottom. Conversely, the surrounding magnet 4 has an S pole at the top and a N pole at the bottom.
パッキングプレート１はマグネット４上方および周辺を
囲繞している。断面が先細状の長方形である磁力線ガイ
ドｌＯがマグネット４の上方位置でパッキングプレート
１の主面に配設されている。The packing plate 1 surrounds the magnet 4 above and around it. A magnetic field line guide lO having a tapered rectangular cross section is arranged on the main surface of the packing plate 1 above the magnet 4.
パッキングプレート１の主面とマグネット４の間にター
ゲット３が設けられている。ターゲット３の厚さと磁力
線ガイド１０の高さはほぼ同一である。磁力線ガイド１
０の底部の巾はマグネット４の巾とほぼ同一である。タ
ーゲット３に接する磁力線ガイドｌＯの側面には勾配が
つけられている。パッキングプレートｌの下面には冷却
器７が設けられ、冷却水管６により外部の冷却源（図示
しない）に連絡している。シールド２がパッキングプレ
ートｌの斜上方に設けられている。パッキングプレート
ｌは電源８に連結されている。スパッタリングされる基
板５はターゲット３の上方に取りつけられる。A target 3 is provided between the main surface of the packing plate 1 and the magnet 4. The thickness of the target 3 and the height of the magnetic line guide 10 are approximately the same. Magnetic field line guide 1
The width of the bottom of the magnet 4 is almost the same as the width of the magnet 4. The side surface of the magnetic field line guide lO in contact with the target 3 is sloped. A cooler 7 is provided on the lower surface of the packing plate 1, and is connected to an external cooling source (not shown) through a cooling water pipe 6. A shield 2 is provided diagonally above the packing plate l. The packing plate l is connected to a power source 8. A substrate 5 to be sputtered is mounted above the target 3.
マグネット４が発生する磁力綿は、第１図のアーチ状の
実線で示されるように、磁力線ガイド１０によって湾曲
されて、ターゲット３の面により平行に近づけられる。The magnetic flux generated by the magnet 4 is curved by the magnetic flux guide 10 and brought closer to parallel to the surface of the target 3, as shown by the arched solid line in FIG.
かくして前記のようにスパッタリングはターゲット３の
表面でより均一に行なわれる。Thus, as described above, sputtering is performed more uniformly on the surface of the target 3.
効果
スパッタリングがターゲット３０表面でより均一に行わ
れるので、第４図で破線で示されるように、ターゲット
３は広く全体的に消費される。その使用効率は格段と向
上し、その交換顧度を減少することができた。Since the effect sputtering takes place more uniformly on the surface of the target 30, the target 3 is consumed more generally, as shown by the dashed line in FIG. The efficiency of its use has been greatly improved, and the need for its replacement has been reduced.
第１図は本発明の実施例の一部断面模式図、第２Ａ図お
よび第２Ｂ図はターゲット形状と磁性体の配役状況を示
す平面図、第３Ａ図および第３Ｂ図はそれらの側面断面
図、第４図は実施例におけるターゲットの消耗状況を破
線で示す側面断面図、第５図は従来のスパッタリングカ
ソードの一部断面模式図、第６図はそのターゲットの消
耗状況を破線で示す側面断面図である。
１・・・・パッキングプレート ２・・・・シールド３
・・・・ターゲット ４・・・・マグネット５
・・・・基板 ６・・・・冷却水管７・
・・・冷却器 ８・・・・電源９・・・・
真空槽 １０・・・・磁力線ガイド特許出
願人 旭化成工業株式会社
第１図
第２ＡＩ！Ｉ ｆＪ２Ｂ図
１３ＡＩ！Ｉ ＄３８図FIG. 1 is a partial cross-sectional schematic diagram of an embodiment of the present invention, FIGS. 2A and 2B are plan views showing the target shape and the distribution of magnetic materials, and FIGS. 3A and 3B are side sectional views thereof. , FIG. 4 is a side cross-sectional view showing the target consumption condition in the example with broken lines, FIG. 5 is a partial cross-sectional schematic diagram of a conventional sputtering cathode, and FIG. 6 is a side cross-sectional view showing the target consumption condition with broken lines. It is a diagram. 1...Packing plate 2...Shield 3
...Target 4...Magnet 5
... Board 6 ... Cooling water pipe 7.
... Cooler 8 ... Power supply 9 ...
Vacuum chamber 10...Magnetic field guide patent applicant Asahi Kasei Corporation Figure 1 Figure 2 AI! I fJ2BFigure 13AI! I $38 figure
Claims (1)
グプレート主面にターゲットの方向に延在して配設され
ていることを特徴とするマグネトロンスパッタリング装
置のスパッタリングカソード。A sputtering cathode for a magnetron sputtering device, characterized in that a magnetic line of force guide is disposed on the main surface of a packing plate, facing the magnetic pole surface of a magnet, and extending in the direction of a target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15131287A JPS63317664A (en) | 1987-06-19 | 1987-06-19 | Sputtering cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15131287A JPS63317664A (en) | 1987-06-19 | 1987-06-19 | Sputtering cathode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63317664A true JPS63317664A (en) | 1988-12-26 |
Family
ID=15515897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15131287A Pending JPS63317664A (en) | 1987-06-19 | 1987-06-19 | Sputtering cathode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63317664A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998028778A1 (en) * | 1996-12-21 | 1998-07-02 | Singulus Technologies Ag | Device for cathodic sputtering |
-
1987
- 1987-06-19 JP JP15131287A patent/JPS63317664A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998028778A1 (en) * | 1996-12-21 | 1998-07-02 | Singulus Technologies Ag | Device for cathodic sputtering |
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