JPH0669026B2 - Semiconductor processing equipment - Google Patents
Semiconductor processing equipmentInfo
- Publication number
- JPH0669026B2 JPH0669026B2 JP21113585A JP21113585A JPH0669026B2 JP H0669026 B2 JPH0669026 B2 JP H0669026B2 JP 21113585 A JP21113585 A JP 21113585A JP 21113585 A JP21113585 A JP 21113585A JP H0669026 B2 JPH0669026 B2 JP H0669026B2
- Authority
- JP
- Japan
- Prior art keywords
- magnet
- magnets
- magnetic field
- main
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は、半導体処理装置の関し、特に電極間に形成さ
れるプラズマに磁界を与える磁石構造を改良したマグネ
トロンスパッタリング装置又はマグネトロンスパッタエ
ッチング装置等の半導体処理装置に係わる。Description: TECHNICAL FIELD OF THE INVENTION The present invention relates to a semiconductor processing apparatus, and more particularly, to a magnetron sputtering apparatus or a magnetron sputter etching apparatus having an improved magnet structure for applying a magnetic field to a plasma formed between electrodes. Related to semiconductor processing equipment.
従来のマグネトロンスパッタリング装置は、一方の電極
を兼ねる真空容器と、この容器の底部に開口された窓部
に絶縁材を介して配置された他方の電極と、前記容器の
外部に前記他方の電極と対向するように配置された一対
のＮ、Ｓ極からなる磁石とから構成されている。かかる
構成のスパッタリングに装置において、前記真空容器と
他方の電極との間に高周波電力等を印加することによっ
てプラズマを発生させると共に、前記磁石による磁界を
該プラズマに与えてそのプラズマの閉じ込め、他方の電
極上に設置したターゲットのスパッタリングを行なうも
のである。しかしながら、こうした構造によるスパッタ
リングに際し、電極間の電界と磁界が直交する領域が狭
いため、プラズマの閉じ込め領域も狭くなり、ターゲッ
トを効率よくスパッタリングできないという欠点があっ
た。また、電界と磁界が直交する領域を広げるために磁
石のＮ極とＳ極の空間を広げると、高速スパッタリング
に必要な強磁場を保持することができなくなるという欠
点が生じる。A conventional magnetron sputtering apparatus, a vacuum container that also serves as one electrode, the other electrode arranged via an insulating material in a window opened at the bottom of the container, and the other electrode outside the container. The magnet is composed of a pair of N and S poles arranged so as to face each other. In the sputtering apparatus having such a structure, plasma is generated by applying high-frequency power or the like between the vacuum container and the other electrode, and a magnetic field is applied to the plasma by the magnet to confine the plasma, The target is placed on the electrode and is sputtered. However, in the case of sputtering with such a structure, since the region where the electric field and the magnetic field between the electrodes are orthogonal to each other is narrow, the plasma confinement region is also narrowed, and there is a drawback that the target cannot be efficiently sputtered. Further, if the space between the N pole and the S pole of the magnet is widened in order to widen the region where the electric field and the magnetic field are orthogonal to each other, there is a drawback that the strong magnetic field required for high speed sputtering cannot be held.
一方、マグネトロンエッチング装置の場合には前記マグ
ネトロンスパッタリング装置における他方の電極にター
ゲットの代わりに被エッチング材（例えば半導体ウェハ
等）を設置する点で異なる以外は同様な構造を有する。
しかしながら、かかる構造のエッチング装置においても
前述したのと同様により被エッチング材を効率よくエッ
チングできないという欠点があった。On the other hand, the magnetron etching apparatus has the same structure except that a material to be etched (for example, a semiconductor wafer) is placed on the other electrode of the magnetron sputtering apparatus instead of the target.
However, even in the etching apparatus having such a structure, there is a drawback in that the material to be etched cannot be efficiently etched in the same manner as described above.
本発明は、真空容器内に発生させたプラズマの閉じ込め
領域を拡大し、かつ強磁場を容易に維持し得る半導体処
理装置を提供しようとするものである。The present invention aims to provide a semiconductor processing apparatus capable of expanding a confined region of plasma generated in a vacuum container and easily maintaining a strong magnetic field.
本発明は、底部に窓部を有する一方の電極を兼ねた真空
容器と、この窓部に絶縁材を介して配置された他方の電
極とを具備し、前記真空容器と他方の電極との間にプラ
ズマを発生させる半導体処理装置において、前記容器の
外部に複数の主磁石を前記陰極に対向し、かつ互いに所
定距離隔てると共に互いに隔てられた主磁石の極性が反
対となるように配置し、更にこれら主磁石の間に極性の
異なる２つの補助磁石を隣接する主磁石と極性が反対と
なるように配置すると共に、前記主磁石におけるＮ、Ｓ
極間の磁場形成面に対する該補助磁石の面積比を０．３
〜０．６としたことを特徴とするものである。かかる本
発明によれば、主磁石のＮ、Ｓ極の間と該主磁石より面
積比の小さい補助磁石のＮ、Ｓ極の間の２箇所に強い磁
場をもつＭ字型の磁場分布をプラズマに対して形成で
き、これによって既述の如く真空容器内に発生させたプ
ラズマの閉じ込め領域を拡大し、かつ強磁場を容易に維
持でき、効率的なスパッタリング又はエッチングを達成
できる。The present invention comprises a vacuum container that also has one electrode having a window portion at the bottom, and the other electrode disposed via an insulating material in the window portion, and between the vacuum container and the other electrode. In the semiconductor processing apparatus for generating plasma, a plurality of main magnets are arranged outside the container so as to face the cathode, and the main magnets are separated from each other by a predetermined distance and the polarities of the main magnets are opposite to each other. Two auxiliary magnets having different polarities are arranged between the main magnets so that the polarities are opposite to those of the adjacent main magnets.
The area ratio of the auxiliary magnet to the magnetic field forming surface between the poles is 0.3.
It is characterized in that it is set to ~ 0.6. According to the present invention, the M-shaped magnetic field distribution having a strong magnetic field is generated between the N and S poles of the main magnet and the N and S poles of the auxiliary magnet having a smaller area ratio than the main magnet. Therefore, as described above, the confined region of the plasma generated in the vacuum container can be expanded, the strong magnetic field can be easily maintained, and efficient sputtering or etching can be achieved.
上記主磁石におけるＮ、Ｓ極間の磁場形成面に対する該
補助磁石の面積比を限定した理由は、その面積比を０．
３未満にすると、磁場のピークが低くなりスパッタリン
グ速度の低下又はエッチング速度の低下を招き、かとい
ってその面積比が０．６を越えると磁場ピークがＭ字型
とならずプラズマ閉じ込め領域の広域化を達成できず、
ひいてはスパッタリング領域の拡大化、又はエッチング
領域の拡大化が困難とするからである。The reason why the area ratio of the auxiliary magnet to the magnetic field forming surface between the N and S poles of the main magnet is limited is that the area ratio is 0.
If it is less than 3, the peak of the magnetic field becomes low, which leads to a decrease in the sputtering rate or the etching rate. Could not be achieved,
As a result, it is difficult to enlarge the sputtering region or the etching region.
〔発明の実施例〕 以下、本発明をマグネトロンスパッタリング装置に適用
した例について第１図を参照して詳細に説明する。[Examples of the Invention] Hereinafter, an example in which the present invention is applied to a magnetron sputtering apparatus will be described in detail with reference to FIG.
図中の１は、一方の電極である陽極を兼ねる真空容器で
あり、該容器１は接地されている。この容器１の底部に
は、窓部２が開口されており、該窓部２には四角環状の
絶縁材３を介して他方の電極としての陰極４が固定され
ている。この陰極４は、図示しない水冷管により冷却さ
れている。前記真空容器１に側壁には、ガス導入管５が
連結されており、かつ該ガス導入管５と反対側の容器１
の側壁にはガス排気管６が連結されている。前記陰極４
の底面には導電材料からなる筺体７が取着されている。
この筺体７内には、後記駆動軸に支持された強磁性材料
からなるホールピース８が配置されている。このホール
ピース８上の中央には、帯状の主磁石９が前記陰極４と
の対向面がＮ極となるように固定されている。また、同
ホールピース８上には帯状の主磁石１０１、１０２が前
記主磁石９を挟んで一定の距離をあけて向い合うと共
に、前記陰極４との対向面がＳ極となるように固定され
ている。これら主磁石９、１０１の間には、極性の異な
る２つの帯状をなす補助磁石１１１、１２１が、前記各
主磁石９、１０２の間には、極性の異なる２つの帯状を
なす補助磁石１１２、１２２が夫々隣接する主磁石９、
１０１、１０２と極性が反対になるように固定されてい
る。これら補助磁石１１１、１２１、１１２、１２
２は、前記主磁石９、１０１、１０２におけるＮ、Ｓ極
間の磁場形成面に対する面積比が０．５となるように設
定されている。つまり、補助磁石１１１、１２１、１１
２、１２２の前記陰極４との対向面は、前記ホールピー
ス８中央の主磁石９のＮ極面の１／４、主磁石１０１、
１０２のＳ極面の１／２の面積比となるように設定され
ている。Reference numeral 1 in the figure denotes a vacuum container that also serves as an anode, which is one of the electrodes, and the container 1 is grounded. A window 2 is opened at the bottom of the container 1, and a cathode 4 serving as the other electrode is fixed to the window 2 via an insulating material 3 having a square ring shape. The cathode 4 is cooled by a water cooling tube (not shown). A gas introduction pipe 5 is connected to the side wall of the vacuum container 1, and the container 1 on the opposite side of the gas introduction pipe 5 is connected.
A gas exhaust pipe 6 is connected to the side wall of the. The cathode 4
A housing 7 made of a conductive material is attached to the bottom surface of the.
Inside the housing 7, a hole piece 8 made of a ferromagnetic material and supported by a drive shaft described later is arranged. At the center of the hole piece 8, a belt-shaped main magnet 9 is fixed so that the surface facing the cathode 4 becomes an N pole. In addition, strip-shaped main magnets 10 1 and 10 2 face each other on the hole piece 8 with a certain distance therebetween with the main magnet 9 sandwiched therebetween, and a surface facing the cathode 4 becomes an S pole. It is fixed. Between these main magnets 9 and 10 1 , two auxiliary magnets 11 1 and 12 1 having different polarities are formed, and between the main magnets 9 and 10 2 , two auxiliary magnets having different polarities are formed. The auxiliary magnets 11 2 and 12 2 are adjacent to the main magnet 9,
It is fixed so that the polarities are opposite to 10 1 and 10 2 . These auxiliary magnets 11 1 , 12 1 , 11 2 , 12
2 is set such that the area ratio between the N and S poles of the main magnets 9, 10 1 , 10 2 with respect to the magnetic field forming surface is 0.5. That is, the auxiliary magnets 11 1 , 12 1 , 11
The surface of 2 , 12 2 facing the cathode 4 is 1/4 of the N pole surface of the main magnet 9 in the center of the hole piece 8, the main magnet 10 1 ,
It is set to be 1/2 of the area ratio of 10 2 S pole surface.
また、前記ホールピース８には筺体７の外から挿入され
たモータ１３の駆動軸１４が該ホールピース８の中心か
ら偏心して軸着されており、かつ該駆動軸１４と筺体７
にはＯリングが介在されている。前記筺体７には、マッ
チング回路１５を介して高周波電源１６が接続されてい
る。つまり、前記高周波電源１６はマッチング回路１５
及び筺体７を通して前記陰極４に接続されている。な
お、前記真空容器１の上壁内面には被堆積部材を保持す
るためのチャック部１７が設けられている。Further, a drive shaft 14 of a motor 13 inserted from the outside of the housing 7 is eccentrically mounted on the hole piece 8 from the center of the hole piece 8, and the drive shaft 14 and the housing 7 are attached.
An O-ring is interposed in. A high frequency power supply 16 is connected to the housing 7 via a matching circuit 15. That is, the high frequency power supply 16 is the matching circuit 15.
And, it is connected to the cathode 4 through a housing 7. A chuck portion 17 for holding the deposition target member is provided on the inner surface of the upper wall of the vacuum container 1.
このような構成によれば、今、陰極４上にターゲット１
８を、チャック部にウェハ（図示せず）を夫々セット
し、真空容器１内を排気管６を通して排気すると共に、
ガス導入管５よりアルゴンガス等を導入して容器１内を
一定の真空状態とした後、高周波電源１６から高周波電
力を陰極４に印加すると、陽極としての容器１と陰極４
の間にプラズマが発生する。こうしたプラズマを発生し
た状態において、前記陰極４の裏面側には主磁石９、１
０１、１０２とこれら主磁石９、１０１、１０２の間に
その磁場形成面に対する面積比が０．５の補助磁石１１
１、１２１、１１２、１２２を配列した磁石群が設けら
れているため、第２図に示すように主磁石９、１０１の
間と補助磁石１１１、１２２間の２箇所に強い磁場をも
つＭ字型の磁場分布がターゲット１８上方に形成され、
同様に主磁石９、１０２の間と補助磁石１１２、１２２
間の２箇所に強い磁場をもつＭ字型の磁場分布がターゲ
ット１８上方に形成される。その結果、前記容器１（陽
極）、陰極４の間の磁界と前記Ｍ字型の磁場分布とが交
わる広い領域において、前記プラズマの閉じ込めがなさ
れるため、陰極４上のターゲット１８を広い領域に亙っ
て、かつ効率よくスパッタリングできる。According to such a configuration, the target 1 is now on the cathode 4.
Wafers (not shown) are set on the chuck part 8 respectively, and the inside of the vacuum container 1 is exhausted through the exhaust pipe 6,
Argon gas or the like is introduced from the gas introduction pipe 5 to make the inside of the container 1 a constant vacuum state, and then high-frequency power is applied from the high-frequency power source 16 to the cathode 4.
Plasma is generated during the period. In the state where such plasma is generated, the main magnets 9, 1 are provided on the back surface side of the cathode 4.
0 1, 10 2 and the area ratio for the magnetic field forming surface between these main magnet 9 1, 10 2 0.5 auxiliary magnet 11
Since a magnet group in which 1 , 12, 1 , 11 2 , and 12 2 are arranged is provided, as shown in FIG. 2, it is located between the main magnets 9 and 10 1 and between the auxiliary magnets 11 1 and 12 2. An M-shaped magnetic field distribution having a strong magnetic field is formed above the target 18,
Similarly as during the main magnet 9,10 2 auxiliary magnets 11 2, 12 2
An M-shaped magnetic field distribution having a strong magnetic field is formed above the target 18 at two places in between. As a result, the plasma is confined in a wide area where the magnetic field between the container 1 (anode) and the cathode 4 and the M-shaped magnetic field distribution intersect, so that the target 18 on the cathode 4 is spread over a wide area. Sputtering can be done efficiently.
事実、本実施例の装置によるターゲット１８のスパッタ
リング深さ分布、並びに主磁石９、１０１、１０２のみ
を用いる従来の装置によるターゲットのスパッタリング
深さ分布を調べたところ、第３図、第４図に示す結果を
得た。この第３図より本実施例の装置では、従来装置
（第４図図示）に比べてスパッタリング深さは同等であ
るが、スパッタリング分布が広がり、スパッタ量が２倍
程度増加することが分る。従って、ターゲット１８に対
向するウェハ上にターゲット材料の膜を高速、かつ均一
厚さで堆積できる。しかも、ターゲット１８のスパッタ
リング領域（エロージョンエリア）が広がるため、ター
ゲット１８の利用率を向上できる。In fact, when the sputtering depth distribution of the target 18 by the apparatus of this embodiment and the sputtering depth distribution of the target by the conventional apparatus using only the main magnets 9, 10 1 , 10 2 were investigated, FIGS. The results shown in the figure were obtained. It can be seen from FIG. 3 that the apparatus of the present embodiment has the same sputtering depth as that of the conventional apparatus (shown in FIG. 4), but the sputtering distribution is broadened and the amount of sputtering is about doubled. Therefore, a film of the target material can be deposited at a high speed and with a uniform thickness on the wafer facing the target 18. Moreover, since the sputtering area (erosion area) of the target 18 is expanded, the utilization rate of the target 18 can be improved.
また、上記実施例のように磁石群を固定するホールピー
ス８に駆動軸１４を偏心して軸着させ、モータ１３によ
りホールピース８を回転させれば、磁石群による前記Ｍ
字型磁場分布をターゲット１８上方で移動させることが
できるため、より一層広い領域でのプラズマの閉じ込め
を行なうことができ、スパッタリングの高速化、均一な
膜形成、更にターゲット１８の利用率の向上を達成でき
る。Further, if the drive shaft 14 is eccentrically mounted on the hole piece 8 for fixing the magnet group and the hole piece 8 is rotated by the motor 13 as in the above-described embodiment, the M by the magnet group is generated.
Since the V-shaped magnetic field distribution can be moved above the target 18, it is possible to confine the plasma in a wider area, speeding up sputtering, forming a uniform film, and improving the utilization rate of the target 18. Can be achieved.
なお、上記実施例では、主磁石及び補助磁石を帯状とし
たが、環状にしてそれらが同芯円状となるようにホール
ピース上に固定してもよい。Although the main magnet and the auxiliary magnet are band-shaped in the above embodiment, they may be annularly fixed on the hole piece so that they are concentric.
上記実施例では、主磁石をＮ極のものを中心にして左右
にＳ極のものを配置した構造にしたが、これらの配置を
逆となるようにしてもよく、更に中央の主磁石の左右に
２つ以上の主磁石を極性が反対となるように配置しても
よい。In the above-mentioned embodiment, the main magnet has a structure in which the north pole and the south pole are arranged in the left and right, but these arrangements may be reversed. Alternatively, two or more main magnets may be arranged so that their polarities are opposite to each other.
上記実施例では、ホールピースをモータの駆動軸により
回転される構造としたが、該ホールピースを往復動作さ
せるようにしてもよい。In the above embodiment, the hole piece has a structure rotated by the drive shaft of the motor, but the hole piece may be reciprocated.
上記実施例では、電源として高周波電源を使用したがＤ
Ｃ電源を用いてもよい。In the above embodiment, a high frequency power source was used as the power source, but D
A C power source may be used.
また、本発明は上記実施例のようなマグネトロンスパッ
タリング装置に限定されず、第５図に示すように陽極４
上に設置したウェハ等の被エッチング材１９をエッチン
グするマクネトロンエッチング装置にも同様に適用でき
る。なお、第５図では前述した第１図と同様な部材は同
符号を付してある。こうした構造のマクネトロンエッチ
ング装置によれば、ウェハ等の被エッチング材を広い領
域に亙って高速かつ均一なエッチングを行なうことがで
きる。Further, the present invention is not limited to the magnetron sputtering apparatus as in the above-mentioned embodiment, but the anode 4 as shown in FIG.
The same can be applied to a McNetron etching apparatus that etches the material to be etched 19 such as a wafer installed above. In FIG. 5, the same members as those in FIG. 1 described above are designated by the same reference numerals. According to the McNetron etching apparatus having such a structure, the material to be etched such as a wafer can be etched at high speed and uniformly over a wide area.
以上詳述した如く、本発明によれば真空容器内に発生さ
せたプラズマの閉じ込め領域を拡大し、かつ強磁場を容
易に維持でき、ひいてはウェハ等の被堆積部材上にター
ゲット材料の膜を高速、かつ均一厚さで堆積できると共
に、ターゲットの利用率を向上したマクネトロンスパッ
タリング装置或いはウェハ等の被エッチング材を広い領
域に亙って高速かつ均一にエッチングし得るマクネトロ
ンエッチング装置等の半導体処理装置を提供できる。As described above in detail, according to the present invention, the confined region of the plasma generated in the vacuum container can be expanded, and the strong magnetic field can be easily maintained, and thus the target material film can be formed on the deposition target member such as a wafer at high speed. , And semiconductor processing such as a McNetron sputtering apparatus capable of depositing a uniform thickness and improving the utilization factor of a target, or a McNetron etching apparatus capable of etching a material to be etched such as a wafer at a high speed and uniformly over a wide area. A device can be provided.
第１図は本発明のマグネトロンスパッタリング装置の一
形態を示す概略断面図、第２図は第１図のスパッタリン
グ装置の作用を説明するための概略図、第３図は本発明
のスパッタリング装置のよるターゲットのスパッタリン
グ深さ分布を示す説明図、第４図は従来のスパッタリン
グ装置のよるターゲットのスパッタリング深さ分布を示
す説明図、第５図は本発明のマグネトロンエッチング装
置の一形態を示す概略断面図である。 １……真空容器、２……窓部、３……環状の絶縁材、４
……陰極、７……筺体、８……ホールピース、９、１０
１、１０２……主磁石、１１１、１１２、１２１、１２
２……補助磁石、１３……モータ、１６……高周波電
源、１７……チャック部、１８……ターゲット、１９…
…被エッチング材（ウェハ）。FIG. 1 is a schematic cross-sectional view showing an embodiment of the magnetron sputtering apparatus of the present invention, FIG. 2 is a schematic view for explaining the operation of the sputtering apparatus of FIG. 1, and FIG. 3 is of the sputtering apparatus of the present invention. Explanatory drawing showing the sputtering depth distribution of the target, FIG. 4 is an explanatory drawing showing the sputtering depth distribution of the target by the conventional sputtering apparatus, and FIG. 5 is a schematic cross-sectional view showing one form of the magnetron etching apparatus of the present invention. Is. 1 ... vacuum container, 2 ... window, 3 ... annular insulating material, 4
...... Cathode, 7 …… Housing, 8 …… Hall piece, 9,10
1 , 10 2 ... Main magnet, 11 1 , 11 2 , 12 1 , 12
2 ... Auxiliary magnet, 13 ... Motor, 16 ... High frequency power supply, 17 ... Chuck part, 18 ... Target, 19 ...
... Material to be etched (wafer).
Claims (2)
空容器と、この窓部に絶縁材を介して配置された他方の
電極とを具備し、前記真空容器と他方の電極との間にプ
ラズマを発生させる半導体処理装置において、前記容器
の外部に複数の主磁石を前記陰極に対向し、かつ互いに
所定距離隔てると共に互いに隔てられた主磁石の極性が
反対となるように配置し、更にこれら主磁石の間に極性
の異なる２つの補助磁石を隣接する主磁石と極性が反対
となるように配置すると共に、前記主磁石におけるＮ、
Ｓ極間の磁場形成面に対する該補助磁石の面積比を０．
３〜０．６としたことを特徴とする半導体処理装置。1. A vacuum container having a window portion at the bottom and also serving as one electrode, and another electrode disposed on the window portion with an insulating material interposed between the vacuum container and the other electrode. In a semiconductor processing apparatus for generating plasma between the plurality of main magnets facing the cathode outside the container, and arranged so that the polarities of the main magnets separated from each other by a predetermined distance are opposite to each other, Further, two auxiliary magnets having different polarities are arranged between the main magnets so that the polarities are opposite to those of the adjacent main magnets.
The area ratio of the auxiliary magnet to the magnetic field forming surface between the S poles is set to 0.
A semiconductor processing device having a thickness of 3 to 0.6.
ピースに固定すると共に、該ホールピースに回転機構又
は往復動作機構を連結したことを特徴とする特許請求の
範囲第１項記載の半導体処理装置。2. The semiconductor according to claim 1, wherein the main magnet and the auxiliary magnet are fixed to a hole piece made of a ferromagnetic material, and a rotating mechanism or a reciprocating mechanism is connected to the hole piece. Processing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21113585A JPH0669026B2 (en) | 1985-09-26 | 1985-09-26 | Semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21113585A JPH0669026B2 (en) | 1985-09-26 | 1985-09-26 | Semiconductor processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6272121A JPS6272121A (en) | 1987-04-02 |
| JPH0669026B2 true JPH0669026B2 (en) | 1994-08-31 |
Family
ID=16600965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21113585A Expired - Lifetime JPH0669026B2 (en) | 1985-09-26 | 1985-09-26 | Semiconductor processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0669026B2 (en) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4786361A (en) * | 1986-03-05 | 1988-11-22 | Kabushiki Kaisha Toshiba | Dry etching process |
| JP2537210B2 (en) * | 1986-09-18 | 1996-09-25 | 株式会社東芝 | High-density plasma generator |
| JPS6428921A (en) * | 1987-07-24 | 1989-01-31 | Tokuda Seisakusho | Plasma treatment device |
| JPH01243524A (en) * | 1988-03-25 | 1989-09-28 | Hitachi Ltd | Plasma processing equipment |
| JPH0768617B2 (en) * | 1988-04-18 | 1995-07-26 | 日電アネルバ株式会社 | Magnetron sputtering equipment |
| JPH06104899B2 (en) * | 1990-02-28 | 1994-12-21 | 日電アネルバ株式会社 | Magnetron sputtering equipment |
| KR950000011B1 (en) * | 1990-02-28 | 1995-01-07 | 니찌덴 아네루바 가부시끼가이샤 | Magnetron sputtering apparatus and thin film depositing method |
| DE69128544T2 (en) * | 1990-10-31 | 1998-04-16 | Materials Research Corp | METHOD AND DEVICE FOR COATING SPUTS WITH ROTATING MAGNETIC CATHODE |
| US5592358A (en) * | 1994-07-18 | 1997-01-07 | Applied Materials, Inc. | Electrostatic chuck for magnetic flux processing |
| JPH11340165A (en) * | 1998-05-20 | 1999-12-10 | Applied Materials Inc | Sputtering device and magnetron unit |
| US6432285B1 (en) * | 1999-10-15 | 2002-08-13 | Cierra Photonics, Inc. | Planar magnetron sputtering apparatus |
| KR100846484B1 (en) * | 2002-03-14 | 2008-07-17 | 삼성전자주식회사 | Rotation magnetron in magnetron electrode and method of manufacturing the same and sputtering apparatus with the same |
| US6829056B1 (en) | 2003-08-21 | 2004-12-07 | Michael Barnes | Monitoring dimensions of features at different locations in the processing of substrates |
| JP2007092136A (en) | 2005-09-29 | 2007-04-12 | Shin Meiwa Ind Co Ltd | Magnet structure for magnetron sputtering, cathode electrode unit, and magnetron sputtering apparatus |
| JP4835432B2 (en) * | 2006-12-27 | 2011-12-14 | 凸版印刷株式会社 | Magnet set, film forming method, and organic electroluminescent device manufacturing method |
| US8070925B2 (en) * | 2008-10-17 | 2011-12-06 | Applied Materials, Inc. | Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target |
| CN106298420B (en) * | 2015-05-22 | 2018-09-18 | 北京北方华创微电子装备有限公司 | Lower electrode and semiconductor processing equipment |
-
1985
- 1985-09-26 JP JP21113585A patent/JPH0669026B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6272121A (en) | 1987-04-02 |
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