JPS63125675A - Magnetron sputtering device - Google Patents
Magnetron sputtering deviceInfo
- Publication number
- JPS63125675A JPS63125675A JP27025386A JP27025386A JPS63125675A JP S63125675 A JPS63125675 A JP S63125675A JP 27025386 A JP27025386 A JP 27025386A JP 27025386 A JP27025386 A JP 27025386A JP S63125675 A JPS63125675 A JP S63125675A
- Authority
- JP
- Japan
- Prior art keywords
- target
- poles
- permanent magnets
- cathode
- magnetron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001755 magnetron sputter deposition Methods 0.000 title claims description 17
- 239000010409 thin film Substances 0.000 abstract description 11
- 238000010849 ion bombardment Methods 0.000 abstract description 9
- 230000003628 erosive effect Effects 0.000 abstract description 8
- 230000005672 electromagnetic field Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000010406 cathode material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 206010044038 Tooth erosion Diseases 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は磁界中の放電にともなう陰極スパッタリング現
象を利用して、被膜を形成するマグネトロンスパッタ装
置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a magnetron sputtering apparatus that forms a film by utilizing a cathode sputtering phenomenon caused by discharge in a magnetic field.
従来の技術
スパッタリング現象はグロー放電によるガスイオンが電
界により加速されて陰極に衝突することにより、陰極材
料が原子、又はその集団として射出する現象である。BACKGROUND ART Sputtering is a phenomenon in which gas ions generated by glow discharge are accelerated by an electric field and collide with a cathode, whereby the cathode material is ejected as atoms or a group thereof.
スパッタリング装置は、陰極から射出する陰極材料を陰
極と対向する基板上に付着、堆積し、基２へ−ジ
板上に陰極材料の被膜を形成する装置である。The sputtering device is a device that attaches and deposits the cathode material emitted from the cathode onto a substrate facing the cathode, and forms a film of the cathode material on the substrate 2.
近年、スパッタリング装置は、被膜の形成速度が速い直
交電磁界配置のマグネトロンスパッタ装置が主流となっ
てきた（例えば、早用茂、和佐清孝著：「薄膜化技術」
第５章、５．２スパツタ装置参照）。In recent years, magnetron sputtering equipment with orthogonal electromagnetic field configuration has become the mainstream sputtering equipment, which has a faster film formation rate (for example, "Thin Film Technology" by Shigeru Hayayo and Kiyotaka Wasa).
(See Chapter 5, 5.2 Sputtering device).
直交電磁界放電を利用したマグネトロンスパッタ装置の
ターゲットの表面近傍における磁界分布は不均一となる
。この結果、ターゲット表面は不均一なイオン衝撃を受
け、ターゲット表面が局部的な浸蝕を受ける。このため
ターゲットの寿命は局部的な浸蝕が進み、ターゲットと
ターゲット裏板のボンディング面に浸蝕が達した時とな
り、ターゲットの利用効率が非常に低い状態であった。In a magnetron sputtering device that uses orthogonal electromagnetic field discharge, the magnetic field distribution near the target surface becomes non-uniform. As a result, the target surface is subjected to non-uniform ion bombardment, resulting in localized erosion of the target surface. For this reason, the life of the target was limited to the point at which local erosion progressed and the erosion reached the bonding surface between the target and the target back plate, and the utilization efficiency of the target was extremely low.
以下、図面を参照しながら、上述したような従来のマグ
ネトロンスパッタ装置について説明を行う。Hereinafter, a conventional magnetron sputtering apparatus as described above will be explained with reference to the drawings.
第３図は従来のマグネトロンスパッタ装置の陰極部を示
すものである。第３図において、１はターゲット、２１
２Ｌ、２１ｂは上端がＮ極、下端が３ベージ
Ｓ極の永久磁石、２３は上端がＳ極下端がＮ極の永久磁
石、３は磁気回路を構成するためのコーク、５はターゲ
ット１上での放電領域を限定するためのアース電位のシ
ールド板、６は陰極部を保持するベースプレート、７は
絶縁プレート、８はカソード、９はカソード８に負電位
を与えるり、Ｏｌ又はＲ，Ｆの電源である。FIG. 3 shows a cathode section of a conventional magnetron sputtering apparatus. In Figure 3, 1 is the target, 21
2L and 21b are permanent magnets with an N pole on the upper end and a 3-page S pole on the lower end, 23 is a permanent magnet with an S pole on the upper end and an N pole on the lower end, 3 is a coke for forming a magnetic circuit, and 5 is on the target 1. A ground potential shield plate for limiting the discharge area of It is.
以上のように構成されたマグネトロンスパッタ装置の陰
極部について、以下その動作について説明する。The operation of the cathode section of the magnetron sputtering apparatus configured as described above will be described below.
ターゲット１の永久磁石２１１Ｌ、２１ｔ）及び２３に
対する面の裏面をｌＸ１０Ｔｏ□１Ｘ １０ Ｔｏｒｒ
の低圧気体雰囲気中に設置する。ターゲット１のこの面
上では、永久磁石２１１Ｌ、２１ｂ、２３［より、矢印
人で示す向きに磁力線が発生しているため、カソード８
に電源９により負電圧金印加するとターゲット１上で電
磁界の作用によりマグネトロン放電が生ずる。このマグ
ネトロン放電ね収束磁力線Ａにより閉じ込められ、その
結果この部分のターゲットは強いイオン衝撃を受け、激
しい浸蝕を受ける。The back side of the surface of target 1 relative to the permanent magnets 211L, 21t) and 23 is 1X10To□1X10 Torr
installed in a low-pressure gas atmosphere. On this surface of the target 1, the permanent magnets 211L, 21b, 23 [, since magnetic lines of force are generated in the direction indicated by the arrows, the cathode 8
When a negative voltage gold is applied by the power source 9, a magnetron discharge is generated on the target 1 due to the action of an electromagnetic field. This magnetron discharge is confined by the convergent magnetic field lines A, and as a result, the target in this area is subjected to strong ion bombardment and severe erosion.
マグネトロンスパッタ装置を利用した薄膜形成において
は、ターゲット１の浸蝕面に対向して基板を設け、ター
ゲツト材質を主成分にした薄膜を基板上に堆積させるも
のである。第４図に、ターゲット１を長時間マグネトロ
ン放電にさらし、スパッタを行った後のターゲットの断
面と、基板上に堆積した薄膜の膜厚分布を示す。第４図
において、１０は永久磁石２１ａ、２１ｂ、２３の配列
方向にターゲット１を切断した断面形状、その上の曲線
Ｘは断面直上の基板上の堆積膜の膜厚分布を示すもので
ある。In forming a thin film using a magnetron sputtering device, a substrate is provided opposite the eroded surface of the target 1, and a thin film containing the target material as a main component is deposited on the substrate. FIG. 4 shows a cross section of the target 1 after it has been exposed to magnetron discharge for a long time and sputtered, and the thickness distribution of the thin film deposited on the substrate. In FIG. 4, reference numeral 10 represents a cross-sectional shape of the target 1 cut in the direction in which the permanent magnets 21a, 21b, and 23 are arranged, and a curve X above the cross-sectional shape represents the film thickness distribution of the deposited film on the substrate immediately above the cross-section.
発明が解決しようとする問題点
しかしながら、第４図に示す如く、磁界収束部分に対応
するターゲツト面は深く浸蝕を受けるが、磁界収束部か
らはずれたターゲツト面はほとんど浸蝕を受けておらず
、このためターゲットの寿命は磁界収束部の浸蝕の深さ
で決まり、ターゲット全体積の１０〜２ｏ％程度しか利
用されていないという問題点を有していた。Problems to be Solved by the Invention However, as shown in Figure 4, the target surface corresponding to the magnetic field convergence area is deeply eroded, but the target surface away from the magnetic field convergence area is hardly eroded; Therefore, the life of the target is determined by the depth of erosion in the magnetic field convergence area, and there is a problem in that only about 10 to 20% of the total target volume is utilized.
５ページ
また近年、薄膜形成において、レアメタルを中心とした
高価なターゲツト材が利用されはじめ、ターゲットの利
用効率の向上という要請が高まってきており、この問題
は極めて重要であった。Page 5 Also, in recent years, expensive target materials, mainly rare metals, have begun to be used in thin film formation, and there has been a growing demand for improved target utilization efficiency, making this issue extremely important.
本発明は上記問題点に鑑み、ターゲットの利用効率を向
上することができるマグネトロンスパッタ装置を提供す
るものである。In view of the above-mentioned problems, the present invention provides a magnetron sputtering apparatus that can improve target utilization efficiency.
問題点を解決するだめの手段
この目的を達成するために、本発明のマグネトロンスパ
ッタ装置は、Ｎ極磁石、Ｓ極磁石が交互に配列された磁
石群が配列方向に連続的に移動する磁界発生機構を陰極
部に設けた構成となっている。Means for Solving the Problems In order to achieve this object, the magnetron sputtering apparatus of the present invention generates a magnetic field in which a group of magnets in which N-pole magnets and S-pole magnets are arranged alternately moves continuously in the arrangement direction. The structure is such that the mechanism is provided in the cathode section.
作用
この構成によってターゲット」二の磁界収束部分がター
ゲットを一様に掃引し、ターゲツト面は一様に浸蝕を受
け、局部的なターゲットの浸蝕がなく、ターゲットの利
用効率が格段に向上することとなる。Effect: With this configuration, the magnetic field convergence part of the target 2 sweeps the target uniformly, the target surface is uniformly eroded, there is no local erosion of the target, and the efficiency of target utilization is greatly improved. Become.
実施例
６ヘージ
以下本発明の一実施例について、図面を参照しながら説
明する。Embodiment 6 Below, an embodiment of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例におけるマグネトロンスパッ
タ装置の陰極部を示すものである。第１図において、１
はターゲット、２１は上端がＮ極、下端がＳ極の永久磁
石、２２は上端がＳ極、下端がＮ極の永久磁石、３はベ
ルトの機能を有したヨークであり、第１図に示す如く複
数個の永久磁石２１．２２をベルトｓ上に交互に設けて
いる。４はヨーク３及び永久磁石２１．２２を駆動させ
るための回転車、５はシールド板、６はベースプレー
１−１７は絶縁ポート、８はカソード、９はり、Ｃ又は
Ｒ，Ｆの電源である。FIG. 1 shows a cathode section of a magnetron sputtering apparatus in one embodiment of the present invention. In Figure 1, 1
is a target, 21 is a permanent magnet with an N pole at the top end and an S pole at the bottom end, 22 is a permanent magnet with an S pole at the top end and a N pole at the bottom end, and 3 is a yoke that functions as a belt, as shown in Figure 1. A plurality of permanent magnets 21 and 22 are provided alternately on the belt s. 4 is a rotating wheel for driving the yoke 3 and permanent magnets 21 and 22, 5 is a shield plate, and 6 is a base plate.
1-17 is an insulated port, 8 is a cathode, 9 is a beam, C or R, F power source.
以上のように構成されたマグネトロンスパッタ装置の陰
極部について、以下その動作について説明する。The operation of the cathode section of the magnetron sputtering apparatus configured as described above will be described below.
ターゲット１の永久磁石２１及び２２に対する面と反対
面をｌＸ１０Ｔｏｒｒ〜Ｉ Ｘ １０ Ｔｏｒｒの低圧
気体雰囲気中に設置する。ターゲット１のこの面上では
、永久磁石２１．２２により、矢印Ｂで７ヘージ
示す向きに磁力線が発生している。The surface of the target 1 opposite to the surface facing the permanent magnets 21 and 22 is placed in a low pressure gas atmosphere of 1.times.10 Torr to 1.times.10 Torr. On this surface of the target 1, magnetic lines of force are generated by the permanent magnets 21, 22 in the direction indicated by arrow B by 7 heges.
カソード８に電源９により負電圧を印加すると、ターゲ
ット１上で電磁界の作用によりマグネトロン放電が生ず
る。この際に、回転車４を駆動させ矢印Ｃの方向に、ヨ
ーク３及び永久磁石２１．２２を移動させると、収束磁
力線Ｂにより閉じ込められたマグネトロン放電はターゲ
ット１上を第１図の左から右に向かって移動する。これ
に伴って、イオン衝撃による浸蝕部もターゲット１上を
移動する。When a negative voltage is applied to the cathode 8 by a power source 9, a magnetron discharge occurs on the target 1 due to the action of the electromagnetic field. At this time, when the rotary wheel 4 is driven to move the yoke 3 and the permanent magnets 21 and 22 in the direction of arrow C, the magnetron discharge confined by the converging magnetic field lines B moves over the target 1 from left to right in FIG. move towards. Along with this, the eroded portion due to ion bombardment also moves on the target 1.
イオン衝撃による浸蝕がカソード８におよばないために
、シールド板５によりマグネトロン放電の領域を限定し
ている。In order to prevent corrosion caused by ion bombardment from reaching the cathode 8, the area of magnetron discharge is limited by the shield plate 5.
第２図に、本実施例によるマグネトロンスパッタ装置の
陰極部により、ターゲット１を長時間マグネトロン放電
にさらし、スパッタを行った後のターゲット１の断面及
び基板上に堆積した薄膜の膜厚分布を示す。第２図にお
いて、１１は永久磁石２１．２２の配列方向にターゲッ
ト１を切断した断面形状、その上の曲線Ｙはターゲツト
１断面直上の基板上の堆積膜の膜厚分布を示すもので、
均一にターゲット１が浸蝕されている。Figure 2 shows the cross section of the target 1 and the film thickness distribution of the thin film deposited on the substrate after sputtering by exposing the target 1 to magnetron discharge for a long time using the cathode section of the magnetron sputtering apparatus according to this embodiment. . In FIG. 2, reference numeral 11 indicates the cross-sectional shape of the target 1 cut in the direction in which the permanent magnets 21 and 22 are arranged, and the curve Y above it indicates the film thickness distribution of the deposited film on the substrate directly above the cross-section of the target 1.
Target 1 is uniformly eroded.
以上のように本実施例によれば、永久磁石２１゜２２を
連続的に移動させることによシ、イオン衝撃によるター
ゲット浸蝕部分をターゲット全面で掃引させ、第２図に
示す如く、均一なターゲット浸蝕を実現し、ターゲット
の利用効率を６０−６０％に向上できる。さらに、基板
への膜付着速度の等速性を達成し、均一な膜厚分布の薄
膜を作製できる。As described above, according to this embodiment, by continuously moving the permanent magnets 21 and 22, the eroded portion of the target due to ion bombardment is swept over the entire surface of the target, and as shown in FIG. Erosion can be realized and target utilization efficiency can be improved to 60-60%. Furthermore, it is possible to achieve uniform film deposition speed on the substrate and to produce a thin film with a uniform thickness distribution.
また、本実施例では永久磁石を密に配置することにより
ターゲット上でのイオン衝撃面積を広げたため、ターゲ
ットの浸蝕速度が速くなシ、薄膜の高速成膜が可能とな
る。Furthermore, in this example, the ion bombardment area on the target is expanded by arranging the permanent magnets densely, so that the target is eroded at a high rate and a thin film can be formed at high speed.
なお、本実施例ではターゲットの形状を角型としたが、
ジ−トド板５の形状を変更することにより、丸型のター
ゲットでも対応できる。Note that in this example, the shape of the target was square, but
By changing the shape of the target plate 5, even a round target can be used.
発明の効果
本発明はＮ極、Ｓ極が交互に配列された磁石群を、配列
方向の一方向に連続的に移動する磁界発９べ−７
主機構を陰極部に設けることにより、イオン衝撃による
ターゲット浸蝕を均一にし、ターゲットの利用効率の向
上と薄膜の膜厚の均一化をはかることができ、さらに永
久磁石の配置を密にしたことによシ薄膜の高速成膜とい
う効果を得ることができる優れたマグネトロンスパッタ
装置を実現できるものである。Effects of the Invention The present invention uses a group of magnets in which N poles and S poles are arranged alternately to generate a magnetic field that moves continuously in one direction in the arrangement direction.By providing a main mechanism in the cathode part, ion bombardment can be achieved. This makes it possible to uniformly erode the target, improve target usage efficiency, and make the thickness of the thin film uniform.Furthermore, by densely arranging the permanent magnets, it is possible to achieve the effect of high-speed deposition of thin films. This makes it possible to realize an excellent magnetron sputtering device that can perform
【図面の簡単な説明】
第１図は本発明の一実施例におけるマグネトロンスパッ
タ装置の断面斜視図、第２図は長時間スパッタ後のター
ゲット断面と膜厚分布とを示す対応図、第３図は従来の
マグネトロンスパッタ装置の断面斜視図、第４図は長時
間スパッタ後のターゲット断面と膜厚分布とを示す対応
図である。
１・・・・・・ターゲット、３・・・・・・ヨーク、４
・・・・・・回転車、５・・・・・シールド板、６・・
・・・ベースプレート、了・・・・・・絶縁ボート、８
・・・・・カソード、９・・・・・−電源、１０．１１
・・・・・・ターゲット断面、２１．２２・・・・・・
永久磁石。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名×
３
８−Ｉｌｉ！１呻
大−[Brief Description of the Drawings] Fig. 1 is a cross-sectional perspective view of a magnetron sputtering apparatus in an embodiment of the present invention, Fig. 2 is a corresponding diagram showing a target cross section and film thickness distribution after long-time sputtering, and Fig. 3 4 is a cross-sectional perspective view of a conventional magnetron sputtering apparatus, and FIG. 4 is a corresponding diagram showing a target cross section and film thickness distribution after long-time sputtering. 1...Target, 3...Yoke, 4
... Rotating wheel, 5 ... Shield plate, 6 ...
・・・Base plate, finished...Insulated boat, 8
...Cathode, 9...-Power supply, 10.11
...Target cross section, 21.22...
permanent magnet. Name of agent: Patent attorney Toshio Nakao and 1 other person
3 8-Ili! 1 big groan
Claims (1)
方向に連続的に移動するように構成された磁界発生機構
を陰極部分に設けたことを特徴とするマグネトロンスパ
ッタ装置。A magnetron sputtering apparatus characterized in that a magnetic field generating mechanism is provided in a cathode portion, in which a group of magnets in which N poles and S poles are alternately arranged move continuously in one direction of arrangement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27025386A JPS63125675A (en) | 1986-11-13 | 1986-11-13 | Magnetron sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27025386A JPS63125675A (en) | 1986-11-13 | 1986-11-13 | Magnetron sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63125675A true JPS63125675A (en) | 1988-05-28 |
Family
ID=17483669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27025386A Pending JPS63125675A (en) | 1986-11-13 | 1986-11-13 | Magnetron sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63125675A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001254175A (en) * | 2000-01-24 | 2001-09-18 | Senken Kan | Planar magnetron sputtering system |
| WO2003015124A1 (en) * | 2001-08-02 | 2003-02-20 | N.V. Bekaert S.A. | Sputtering magnetron arrangements with adjustable magnetic field strength |
| KR100603459B1 (en) | 2003-11-13 | 2006-07-20 | 엘지전자 주식회사 | Sputtering Apparatus |
| JP2009228129A (en) * | 2008-03-21 | 2009-10-08 | Beijing Boe Optoelectronics Technology Co Ltd | Magnetic control sputtering target structure and equipment |
| US20100006424A1 (en) * | 2008-07-09 | 2010-01-14 | Samsung Mobile Display Co. Ltd. | Magnetron unit moving apparatus for preventing magnetization and magnetron sputtering equipment having the same |
| US8388819B2 (en) | 2009-02-13 | 2013-03-05 | Beijing Boe Optoelectronics Technology Co., Ltd. | Magnet target and magnetron sputtering apparatus having the same |
| US9449799B2 (en) | 2013-12-30 | 2016-09-20 | Shanghai Tianma AM-OLED Co., Ltd. | Film deposition device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6176673A (en) * | 1984-09-21 | 1986-04-19 | Fujitsu Ltd | Sputtering method |
-
1986
- 1986-11-13 JP JP27025386A patent/JPS63125675A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6176673A (en) * | 1984-09-21 | 1986-04-19 | Fujitsu Ltd | Sputtering method |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001254175A (en) * | 2000-01-24 | 2001-09-18 | Senken Kan | Planar magnetron sputtering system |
| WO2003015124A1 (en) * | 2001-08-02 | 2003-02-20 | N.V. Bekaert S.A. | Sputtering magnetron arrangements with adjustable magnetic field strength |
| KR100603459B1 (en) | 2003-11-13 | 2006-07-20 | 엘지전자 주식회사 | Sputtering Apparatus |
| JP2009228129A (en) * | 2008-03-21 | 2009-10-08 | Beijing Boe Optoelectronics Technology Co Ltd | Magnetic control sputtering target structure and equipment |
| US20100006424A1 (en) * | 2008-07-09 | 2010-01-14 | Samsung Mobile Display Co. Ltd. | Magnetron unit moving apparatus for preventing magnetization and magnetron sputtering equipment having the same |
| US8882976B2 (en) * | 2008-07-09 | 2014-11-11 | Samsung Display Co., Ltd. | Magnetron unit moving apparatus for preventing magnetization and magnetron sputtering equipment having the same |
| US8388819B2 (en) | 2009-02-13 | 2013-03-05 | Beijing Boe Optoelectronics Technology Co., Ltd. | Magnet target and magnetron sputtering apparatus having the same |
| US9449799B2 (en) | 2013-12-30 | 2016-09-20 | Shanghai Tianma AM-OLED Co., Ltd. | Film deposition device |
| DE102014107354B4 (en) | 2013-12-30 | 2022-07-21 | Tianma Micro-Electronics Co., Ltd. | layer deposition device |
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