JPS6329241B2 - - Google Patents

Info

Publication number
JPS6329241B2
JPS6329241B2 JP60082351A JP8235185A JPS6329241B2 JP S6329241 B2 JPS6329241 B2 JP S6329241B2 JP 60082351 A JP60082351 A JP 60082351A JP 8235185 A JP8235185 A JP 8235185A JP S6329241 B2 JPS6329241 B2 JP S6329241B2
Authority
JP
Japan
Prior art keywords
organic polymer
polymer material
radiation
sensitive organic
color separation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60082351A
Other languages
Japanese (ja)
Other versions
JPS60258962A (en
Inventor
Toshio Nakano
Tadao Kaneko
Michiaki Hashimoto
Yukio Hatano
Haruo Matsumaru
Akira Sasano
Eiichi Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60082351A priority Critical patent/JPS60258962A/en
Publication of JPS60258962A publication Critical patent/JPS60258962A/en
Publication of JPS6329241B2 publication Critical patent/JPS6329241B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optical Filters (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

〔発明の利用分野〕 本発明は固体撮像素子に関する。 本発明は特に光検知部上に直接色分解フイルタ
ーを搭載するカラー用固体撮像素子に有用であ
る。 〔発明の背景〕 従来、固体撮像素子と色分解フイルターを個別
に製造しておき、両者を位置合せしつつ光学用接
着剤等で貼合せるのが一般的な製造方法である。
また光学用接着剤のかわりに光学用マツチング・
オイルを用いる例も報告されている。 また、多色光学フイルターの製造方法につい
て、特開昭53−99822号公報に、色分解フイルタ
ーの製造方法について、特開昭50−147823号公報
に開示されているが、固体撮像素子にフイルター
を直接設けることは何ら記載されていない。 更に、カラーイメージングデバイスおよびその
製造方法について、特開昭53−47282号公報に開
示されているが放射線感応性材料については、全
く記載がない。 尚、被複用組成物について、特開昭50−83425
号公報に開示があり、当該公報中で放射線感応性
材料について記載されているがこれらは、容器
や、合板に関する技術にすぎないものである。 〔発明の目的〕 本発明の第1の目的は、固体撮像素子の光検知
部上に直接色分解フイルターを搭載し、素子製造
の作業性を向上させることにある。 本発明の第2の目的はこの場合の色分解フイル
ターを十分精度良く、高品位になすことにある。 〔発明の概要〕 本発明は色分解フイルターを構成するいわゆる
中間層や保護層を放射線感応性有機高分子材料を
用い、固体撮像素子のその後の製造工程に有利な
らしめることに第1の要点がある。 第2は、更に前述の有機高分子材料が熱架橋性
なる特性を有することがより好ましい。これは色
分解フイルターの積層構造に用いる中間層等の強
化に有用である。 第3に、前記放射線感応性有機高分子材料がい
わゆるポジ型であることが、工程簡略化の点から
極めて有利である。ネガ型の放射線感応性を有し
ていてもフイルター部の加工にこの特性を使用し
得る。しかし、各中間層を形成と共に、所定の放
射線を露光し架橋を施こす必要が生じ、工程数が
多くなる。勿論ポジ型の放射線感応性有機高分子
材料を用いても、上記各中間層を形成と共に所定
の放射線を露光し、次いで現像して所望の加工を
施して良いし、又複数層毎上述の加工を施して良
いことは当然である。各層毎に加工を行なつた場
合、工程数としてはネガ型の場合と同じ工程数と
なる。しかし、この場合でもポジ型の方が次の如
き利点を有する。即ち、ポジ型の場合、有機高分
子材料の層を除去する部位に放射線を露光する
が、一方、ネガ型の場合、残存させる部位に放射
線を露光する。色分解フイルター母材を有するの
は当然前記有機高分子材料の層が残存せしめられ
る部位となる。従つて、ネガ型の場合、色分解フ
イルター母材にも何度か露光用の放射線が照射さ
れることとなり、フイルター特性の劣化に影響を
およぼす。ポジ型においてはこの様な亜影響は全
くない。 また、多くの場合、フイルター母材にも感光性
を付与して用いるが、この場合フイルター母材の
感光特性と、中間層および保護層の材料の光分特
性が異なつているのが好ましい。フイルター母材
の加工時に、その下部に存在する中間層および保
護層の材料に影響を及ぼさない必要がある。 本発明に用いるに有用な放射線感応性有機高分
子材料は次の如きものが掲げられる。 (1) ポリ・アルキル・メタクリレート又はその共
重合体 但し、Rはアルキル基、例えば、CH3、C4H9 (2) ポリグリシジル・メタクリレート又はその共
重合体 (3) ポリメタクリルアミド (4) ポリメチルイソプロペニルケトン (5) ポリ(ブテン−1スルホン) (6) ポリイソブチレン これらの例以外の放射線感応性有機高分子材料
を使用し得ることはいうまでもない。勿論、放射
線感応性有機高分子材料として紫外線感応性、電
子線感応性、X線感応性等のものを使用し得る。
本明細書の「放送線感応性」なる用語はこれら各
種のものを含むものである。 〔発明の実施例〕 以下、本発明を具体例に従つて詳細に説明す
る。 第1図から第4図までは本発明のカラー用固体
撮像素子の製造工程を示す。いすれも素子の主要
部の断面図である。第5図はその平面図である。 カラー用固体撮像素子基板1には多数の光検知
部10およびこれらを駆動する駆動回路部11が
少なくとも形成されている。なお、半導体基板1
中の詳細な構造は省略されている。一般に基板1
はシリコンで作製されている。光検知部は、これ
を動作させるための周辺回路を形づくる半導体集
積回路と同一基材で作られる場合と、別種の半導
体材料を用いる場合などがある。 こうしたカラー用固体撮像素子基板上に色分解
フイルターの母材の層を厚さ0.5〜2.5μm程度形
成する。この母材は一般にゼラチン、卵白、グリ
ー、カゼインおよびポバール等に感光性を与えた
材料が用いられる。感光特性としてはネガ型を用
い365nmないし435nmに感度を持たせるのが一
般的である。 この層にマスク露光法で第1色目の部分2だけ
光硬化させ現像することによつて、色分解フイル
ター母材の部分2だけが残される。この部分に所
定の分光特性を有する染料で染色する。なお、染
色法を従来から行なわれている染料水溶液を用い
る方法で良い。 なお、この第1色目のフイルター母材の層を形
成する際、基板1の表面に約0.5〜1μmの厚さに
有機高分子材料の被膜を形成しておくのが好まし
い。この有機高分子材料の被膜によつて基板表面
がより平坦化される。これによつて次の様な利点
を生ずる。 (1) 基板1中に設けられた半導体装置部分に対
し、不純物等の汚染の保護効果が生ずる。 (2) 基板1の表面が平坦化され、この上部に形成
される中間層、フイルター母材の層等の形成が
容易になると共に、特に中間層の変形に伴ない
生ずる染色時の混色を防止することが出来る。 (3) 色フイルターの加工工程で、不純物の付着面
積が小さくなり、基板中の半導体装置の汚染防
止に有用である。 なお、この有機高分子材料も前述の中間層等を
形成するための放射線感応性有機高分子材料を用
いるのが、後の加工に有利である。 次いで透明な耐染色性の中間層5を厚さ0.5〜
1.5μmに被覆する。第1図がこの状態である。こ
の中間層に前述の放射線感応性有機高分子材料を
用いる。この場合、色分解フイルター母材の感光
特性と異なる放射線感応特性を有する如く選択す
るのが良いことは前述した。 次に、同様に第2図に示す様に色フイルター母
材の層を形成し、マスク露光法で露光し、現像を
施こし、第2色目のフイルター部分3を形成、所
定の分光特性を有する染料で染色する。更に透明
な中間層6を被覆する。 さらに同様に第3図に示すように色フイルター
[Field of Application of the Invention] The present invention relates to a solid-state image sensor. The present invention is particularly useful for a color solid-state image sensor in which a color separation filter is mounted directly on a photodetector. [Background of the Invention] Conventionally, a common manufacturing method is to manufacture a solid-state image sensor and a color separation filter separately, and then bond them together using an optical adhesive or the like while aligning the two.
Also, instead of optical adhesive, optical matching
Examples of using oil have also been reported. Further, a method for manufacturing a polychromatic optical filter is disclosed in Japanese Patent Application Laid-Open No. 53-99822, and a method for manufacturing a color separation filter is disclosed in Japanese Patent Application Laid-open No. 147823-1989. There is no mention of providing it directly. Further, although a color imaging device and a method for manufacturing the same are disclosed in Japanese Patent Application Laid-Open No. 53-47282, there is no mention of radiation-sensitive materials at all. Regarding the composition to be copied, Japanese Patent Application Laid-Open No. 50-83425
Although the publication discloses radiation-sensitive materials in the publication, these are merely techniques related to containers and plywood. [Object of the Invention] A first object of the present invention is to mount a color separation filter directly on the light detection section of a solid-state image sensor, thereby improving the workability of manufacturing the device. A second object of the present invention is to make the color separation filter in this case sufficiently accurate and of high quality. [Summary of the Invention] The first key point of the present invention is to use a radiation-sensitive organic polymer material for the so-called intermediate layer and protective layer constituting the color separation filter, which is advantageous for the subsequent manufacturing process of the solid-state image sensor. be. Second, it is more preferable that the organic polymer material described above has thermal crosslinkability. This is useful for strengthening intermediate layers used in the laminated structure of color separation filters. Thirdly, it is extremely advantageous for the radiation-sensitive organic polymer material to be of a so-called positive type in terms of process simplification. Even if it has negative radiation sensitivity, this property can be used for processing the filter part. However, as each intermediate layer is formed, it becomes necessary to perform crosslinking by exposing to a predetermined radiation, which increases the number of steps. Of course, even if a positive radiation-sensitive organic polymer material is used, each of the intermediate layers described above may be formed and exposed to a predetermined radiation, and then developed and subjected to the desired processing. Of course, it is okay to do so. When each layer is processed, the number of steps is the same as in the case of negative molding. However, even in this case, the positive type has the following advantages. That is, in the case of a positive type, a portion of the organic polymer material layer to be removed is exposed to radiation, whereas in the case of a negative type, a portion of the organic polymer material to be left is exposed to radiation. Naturally, the color separation filter base material is the part where the layer of the organic polymer material remains. Therefore, in the case of a negative type, the color separation filter base material is also irradiated with exposure radiation several times, which affects the deterioration of the filter characteristics. Positive types have no such sub-effects at all. Furthermore, in many cases, the filter base material is also used by imparting photosensitivity, but in this case, it is preferable that the photosensitivity characteristics of the filter base material and the optical characteristics of the materials of the intermediate layer and the protective layer are different. When processing the filter base material, it is necessary not to affect the materials of the intermediate layer and protective layer that exist below it. The following radiation-sensitive organic polymer materials are useful for use in the present invention. (1) Poly alkyl methacrylate or its copolymer However, R is an alkyl group, for example, CH 3 , C 4 H 9 (2) Polyglycidyl methacrylate or a copolymer thereof (3) Polymethacrylamide (4) Polymethylisopropenylketone (5) Poly(butene-1 sulfone) (6) Polyisobutylene It goes without saying that radiation-sensitive organic polymer materials other than these examples may be used. Of course, as the radiation-sensitive organic polymer material, those sensitive to ultraviolet rays, electron beams, X-rays, etc. can be used.
As used herein, the term "broadcast line sensitivity" includes these various types. [Embodiments of the Invention] The present invention will be described in detail below with reference to specific examples. 1 to 4 show the manufacturing process of the color solid-state image sensing device of the present invention. All are sectional views of the main parts of the elements. FIG. 5 is a plan view thereof. The color solid-state image sensor substrate 1 is provided with at least a large number of photodetecting sections 10 and a drive circuit section 11 for driving them. Note that the semiconductor substrate 1
The detailed structure inside has been omitted. Generally board 1
is made of silicon. The photodetector may be made of the same base material as the semiconductor integrated circuit that forms the peripheral circuitry for operating the photodetector, or may be made of a different type of semiconductor material. A layer of a base material of a color separation filter is formed to a thickness of about 0.5 to 2.5 μm on such a color solid-state image sensor substrate. This matrix is generally made of gelatin, egg white, green, casein, poval, or the like, which has been made photosensitive. As for photosensitive characteristics, it is common to use a negative type and have sensitivity in the range of 365 nm to 435 nm. By photo-curing and developing only the first color portion 2 of this layer using a mask exposure method, only the portion 2 of the color separation filter base material remains. This area is dyed with a dye having predetermined spectral characteristics. Note that the dyeing method may be a conventional method using an aqueous dye solution. In addition, when forming this layer of the filter base material of the first color, it is preferable to form a film of an organic polymer material on the surface of the substrate 1 to a thickness of about 0.5 to 1 μm. The surface of the substrate is further planarized by this coating of organic polymer material. This brings about the following advantages. (1) The semiconductor device portion provided in the substrate 1 is protected from contamination such as impurities. (2) The surface of the substrate 1 is flattened, making it easier to form the intermediate layer, filter base material layer, etc. formed on the top thereof, and preventing color mixing during dyeing, which occurs especially when the intermediate layer is deformed. You can. (3) In the color filter processing process, the area on which impurities adhere is reduced, which is useful for preventing contamination of semiconductor devices on the substrate. Note that it is advantageous for later processing to use a radiation-sensitive organic polymer material for forming the above-mentioned intermediate layer and the like as the organic polymer material. Next, a transparent dye-resistant intermediate layer 5 is formed to a thickness of 0.5~
Coat to 1.5μm. FIG. 1 shows this state. The aforementioned radiation-sensitive organic polymer material is used for this intermediate layer. In this case, as described above, it is preferable to select a material having radiation sensitivity characteristics different from those of the color separation filter base material. Next, as shown in FIG. 2, a layer of color filter base material is formed, exposed using a mask exposure method, and developed to form a second color filter portion 3, which has predetermined spectral characteristics. Dye with dye. Furthermore, a transparent intermediate layer 6 is coated. Furthermore, as shown in Figure 3, a color filter is applied.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、固体撮像素子上に直接色分解
フイルターを搭載でき、素子製造の作業性を向上
させることができる。 更に、色分解フイルターを精度良く、高品位に
設けることができる。
According to the present invention, it is possible to directly mount a color separation filter on a solid-state image sensor, thereby improving the workability of manufacturing the device. Furthermore, color separation filters can be provided with high precision and high quality.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図より第4図は本発明のカラー用固体撮像
素子の製造方法を示す素子断面図、第5図はカラ
ー用固体撮像素子の平面図である。 1……固体撮像素子基板、2,3,4……色フ
イルター部、5,6……中間層、7……保護膜。
1 to 4 are cross-sectional views of the color solid-state imaging device according to the present invention, and FIG. 5 is a plan view of the color solid-state imaging device. 1... Solid-state image sensor substrate, 2, 3, 4... Color filter section, 5, 6... Intermediate layer, 7... Protective film.

Claims (1)

【特許請求の範囲】 1 複数の光検知要素が配置された光検知部と、
配線部とを少なくとも有する半導体基体上部に色
分解用フイルター部が透光性の放射線感応性有機
高分子材料層を介して設けられ、前記色分解用フ
イルター部は所望形状且所定の分光特性を有する
フイルター層および透光性の放射線感応性有機高
分子材料層が所定の数だけ順次積層され、且上記
放射線感応性有機高分子材料層を局部的に除去
し、この局部的に除去した領域を通して施こされ
た配線を少なくとも有することを特徴とする固体
撮像素子。 2 複数の光検知要素が配置された光検知部と、
配線部とを少なくとも有する半導体基体上部に色
分解用フイルター部が透光性のポジ型放射線感応
性有機高分子材料層を介して設けられ、前記色分
解用フイルター部は所望形状且所定の分光特性を
有するフイルター層および透光性のポジ型放射線
感応性有機高分子材料層が所定の数だけ順次積層
され、且上記ポジ型放射線感応性有機高分子材料
層を局部的に除去し、この局所的に除去した領域
を通して施こされた配線を少なくとも有すること
を特徴とする固体撮像素子。
[Claims] 1. A light detection section in which a plurality of light detection elements are arranged;
A color separation filter section is provided on the semiconductor substrate having at least a wiring section via a transparent radiation-sensitive organic polymer material layer, and the color separation filter section has a desired shape and predetermined spectral characteristics. A predetermined number of filter layers and light-transmitting radiation-sensitive organic polymer material layers are sequentially laminated, and the radiation-sensitive organic polymer material layer is locally removed, and the radiation-sensitive organic polymer material layer is applied through the locally removed area. 1. A solid-state image sensing device comprising at least traced wiring. 2. A light detection section in which a plurality of light detection elements are arranged;
A color separation filter section is provided on the semiconductor substrate having at least a wiring section through a translucent positive radiation-sensitive organic polymer material layer, and the color separation filter section has a desired shape and a predetermined spectral characteristic. A predetermined number of filter layers and translucent positive radiation-sensitive organic polymer material layers are sequentially laminated, and the positive radiation-sensitive organic polymer material layer is locally removed. What is claimed is: 1. A solid-state image sensing device comprising at least wiring that is routed through a region that has been removed.
JP60082351A 1985-04-19 1985-04-19 Solid-state image pickup element Granted JPS60258962A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60082351A JPS60258962A (en) 1985-04-19 1985-04-19 Solid-state image pickup element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60082351A JPS60258962A (en) 1985-04-19 1985-04-19 Solid-state image pickup element

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP54020801A Division JPS6046401B2 (en) 1979-02-26 1979-02-26 Manufacturing method of solid-state image sensor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP1107618A Division JPH0215201A (en) 1989-04-28 1989-04-28 Solid-state image pickup element

Publications (2)

Publication Number Publication Date
JPS60258962A JPS60258962A (en) 1985-12-20
JPS6329241B2 true JPS6329241B2 (en) 1988-06-13

Family

ID=13772147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60082351A Granted JPS60258962A (en) 1985-04-19 1985-04-19 Solid-state image pickup element

Country Status (1)

Country Link
JP (1) JPS60258962A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2608907B2 (en) * 1988-01-28 1997-05-14 株式会社日立製作所 Rotary tape guide mechanism for magnetic recording / reproducing device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5217375A (en) * 1975-07-21 1977-02-09 Kanegafuchi Chem Ind Co Ltd Membrane separating apparatus
JPS5228547U (en) * 1975-08-14 1977-02-28
JPS5324291A (en) * 1976-08-18 1978-03-06 Nec Corp Production of semiconductor devi ce
JPS53134324A (en) * 1977-04-28 1978-11-22 Sony Corp Manufacture for color pick up element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5217375A (en) * 1975-07-21 1977-02-09 Kanegafuchi Chem Ind Co Ltd Membrane separating apparatus
JPS5228547U (en) * 1975-08-14 1977-02-28
JPS5324291A (en) * 1976-08-18 1978-03-06 Nec Corp Production of semiconductor devi ce
JPS53134324A (en) * 1977-04-28 1978-11-22 Sony Corp Manufacture for color pick up element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2608907B2 (en) * 1988-01-28 1997-05-14 株式会社日立製作所 Rotary tape guide mechanism for magnetic recording / reproducing device

Also Published As

Publication number Publication date
JPS60258962A (en) 1985-12-20

Similar Documents

Publication Publication Date Title
JPS6046401B2 (en) Manufacturing method of solid-state image sensor
JP2000340776A (en) Solid-state image pickup device and manufacture thereof
JPS58100108A (en) Color filter element
JPH0235282B2 (en)
JPS6329241B2 (en)
JPH03190169A (en) Solid-state image sensing device and manufacture thereof
JPS61267005A (en) Color separation filter and its manufacture
JP2614064B2 (en) Solid color image sensor
JPH0582561B2 (en)
JP2547194B2 (en) Method for manufacturing color solid-state imaging device
JPS6318341B2 (en)
JPS62264005A (en) Production of high precision color filter
JP2751376B2 (en) Solid-state imaging device
JPS6041004A (en) Solid-state image pickup element
JP2680598B2 (en) Method of forming micro condenser lens
JPH03255404A (en) Production of color solid-state image pickup device
KR830001454B1 (en) Solid-state Imaging Device for Color
JPS61289304A (en) Solid state color image sensing element
JPS6064303A (en) Production of color filter
JPS5898959A (en) Color solid state image pickup element and manufacture thereof
JPS60114807A (en) Production of fine color filter
JPS58154808A (en) Color filter
JPH03191302A (en) Color solid state image pickup device
JP2802999B2 (en) Method for manufacturing color solid-state imaging device
JPH05183140A (en) Solid-state image pickup device and manufacture thereof