JPS5898959A - Color solid state image pickup element and manufacture thereof - Google Patents
Color solid state image pickup element and manufacture thereofInfo
- Publication number
- JPS5898959A JPS5898959A JP56196802A JP19680281A JPS5898959A JP S5898959 A JPS5898959 A JP S5898959A JP 56196802 A JP56196802 A JP 56196802A JP 19680281 A JP19680281 A JP 19680281A JP S5898959 A JPS5898959 A JP S5898959A
- Authority
- JP
- Japan
- Prior art keywords
- color
- layer
- state image
- filter
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000007787 solid Substances 0.000 title abstract description 3
- 239000000463 material Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000000926 separation method Methods 0.000 claims abstract description 12
- 230000003595 spectral effect Effects 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 39
- 229920000620 organic polymer Polymers 0.000 claims description 8
- 239000002861 polymer material Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910010272 inorganic material Inorganic materials 0.000 claims description 2
- 239000011147 inorganic material Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 239000003973 paint Substances 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 description 10
- 238000004043 dyeing Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 108010010803 Gelatin Proteins 0.000 description 4
- 239000008273 gelatin Substances 0.000 description 4
- 229920000159 gelatin Polymers 0.000 description 4
- 235000019322 gelatine Nutrition 0.000 description 4
- 235000011852 gelatine desserts Nutrition 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 229920002454 poly(glycidyl methacrylate) polymer Polymers 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 229920002189 poly(glycerol 1-O-monomethacrylate) polymer Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- NPFYZDNDJHZQKY-UHFFFAOYSA-N 4-Hydroxybenzophenone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=CC=C1 NPFYZDNDJHZQKY-UHFFFAOYSA-N 0.000 description 1
- QCVGEOXPDFCNHA-UHFFFAOYSA-N 5,5-dimethyl-2,4-dioxo-1,3-oxazolidine-3-carboxamide Chemical compound CC1(C)OC(=O)N(C(N)=O)C1=O QCVGEOXPDFCNHA-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 102000002322 Egg Proteins Human genes 0.000 description 1
- 108010000912 Egg Proteins Proteins 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 235000014121 butter Nutrition 0.000 description 1
- 239000005018 casein Substances 0.000 description 1
- BECPQYXYKAMYBN-UHFFFAOYSA-N casein, tech. Chemical compound NCCCCC(C(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(CC(C)C)N=C(O)C(CCC(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(C(C)O)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(COP(O)(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(N)CC1=CC=CC=C1 BECPQYXYKAMYBN-UHFFFAOYSA-N 0.000 description 1
- 235000021240 caseins Nutrition 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000014103 egg white Nutrition 0.000 description 1
- 210000000969 egg white Anatomy 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229940124543 ultraviolet light absorber Drugs 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はカラー固体撮像素子の構造および製法に関連す
る。特にカラーフィルタを直接に固体撮儂素子上に積層
するタイプのカラー固体撮像素子に関連する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the structure and manufacturing method of a color solid-state image sensor. In particular, it relates to a type of color solid-state imaging device in which a color filter is directly stacked on the solid-state imaging device.
従来、本技術に関しては、例えば特開昭５５−１１５３
７１で固体撮儂素子上に１接力ラーフイルタ層を形成す
る方法が提案された。この方法では固体撮儂素子上に染
色したゼラチンバター／と耐染色性の保護層を順次積層
した構造をしておりボンデング部上に形成される保護層
については露光現前で、保論者自体の遠紫外光感光性を
利用してスルホールを形成しているがカラーフィルタ層
を順次形成する過程で、感光性が著しく低下してスルホ
ールの形成が困難になる傾向があった。そのため上記フ
ィルタ層がろまり多層になるとスルホール形成ができな
く會る欠点がめった。Conventionally, regarding this technology, for example, Japanese Patent Application Laid-Open No. 55-1153
In 71, a method was proposed for forming a single tangential force filter layer on a solid-state image sensor. This method has a structure in which dyed gelatin butter and a dye-resistant protective layer are sequentially laminated on a solid-state photographic element, and the protective layer formed on the bonding area is formed before exposure. Through-holes are formed using deep ultraviolet light photosensitivity, but during the process of sequentially forming color filter layers, the photosensitivity tends to drop significantly, making it difficult to form through-holes. For this reason, when the filter layer becomes multi-layered, through holes cannot be formed and the filter layers often meet each other.
本発明は上記構造上、およびプロセス上欠点を解消し、
更にカラー撮債素子の特性上の改良をはかることを目的
としたものである。The present invention eliminates the above structural and process drawbacks,
Furthermore, it is an object of the present invention to improve the characteristics of color photographic elements.
上記目的を達成するための本発明の構５！Ｌは、色分解
用フィルタ一層の少く共最上部に低屈折率の被膜を設け
ることにめる。Structure 5 of the present invention to achieve the above object! L is determined by providing a low refractive index coating on at least the topmost layer of the color separation filter.
すなわちカラーフィルタ層の上に上記低屈折率被膜とし
て、無機物質、例えばＣｒ、ＭＯ，Ｎｊ等の膜−？ｓｉ
Ｏ，やその他のガラス膜を形成し、この膜をパターン化
した後、該膜をマスクとしてプラズマ処理でカラーフィ
ルタの有機性の保１ｊ＠にスルホール形成ル。マスクは
スルホール形成後Ｃｒ−？ＭＯ等の不透明膜の場合には
エツチングして除去する。ｓｈｏ、等の無色透明層はそ
のまま残しておくことができる。ここでとりわけ好まし
い方法は低屈折率のｓｉｏ、を使用することである通常
の有機樹脂の膜の屈折率は１．５〜１．６であり、低屈
折率の膜をコートすると反射時と効果で、カラーフィル
タ層の透過率を向上きせることができる。通常４〜５％
の表面反射があるが、コートすることによって表面反射
を３％位にすることができ、撮倫素子の感度が向上する
。Ｃｒ等を用いるかｓｉｏ、を用いるかは所定の目的に
応じて決冗する必要があるが、感度の点でＩｒ１ｓ ｉ
Ｏ，が有利な技術であることは前述の通りでありなお
良い。以下、実施例を用いて詳述する。That is, a film of an inorganic material, such as Cr, MO, Nj, etc., is formed on the color filter layer as the low refractive index film. si
After forming a glass film such as O, or other glass film and patterning this film, through holes are formed in the organic layer of the color filter by plasma treatment using the film as a mask. Is the mask Cr- after forming through holes? In the case of an opaque film such as MO, it is removed by etching. The colorless transparent layer such as sho, etc. can be left as is. A particularly preferred method here is to use SIO, which has a low refractive index.The refractive index of a normal organic resin film is 1.5 to 1.6, and coating with a low refractive index film will improve the effect of reflection. Therefore, the transmittance of the color filter layer can be improved. Usually 4-5%
However, by coating it, the surface reflection can be reduced to about 3%, improving the sensitivity of the sensor. It is necessary to decide whether to use Cr, etc. or sio, depending on the purpose, but in terms of sensitivity, Ir1s i
As mentioned above, O. is an advantageous technique. The details will be explained below using examples.
実施例１
第１図から第４図までは本発明のカラー用固体撮債素子
の製造工程を示す。いずれも素子の主要部の断面図であ
る。第５図はその平面図である。Example 1 FIGS. 1 to 4 show the manufacturing process of a color solid-state sensor according to the present invention. Both are cross-sectional views of the main parts of the elements. FIG. 5 is a plan view thereof.
カラー用固体ｍ（象素子基板ＩＫＦｉ多数の光検知部ｌ
Ｏおよびこれらを駆動する駆動回路部１１が少なくとも
形成されている。なお、半導体基板ｌ中の詳細な構造は
省略されている。一般に基板１はシリコンで作製されて
いる。光検知部は、これを動作させるための周辺回路を
形づくる半導体集積回路と同一基材で作らｎる場合と、
別種の半導体材料を用いる場合などがある。Color solid m (elemental element substrate IKFi large number of light detection parts l
At least O and a drive circuit section 11 for driving these are formed. Note that the detailed structure in the semiconductor substrate l is omitted. Generally, the substrate 1 is made of silicon. The photodetection section may be made of the same base material as the semiconductor integrated circuit that forms the peripheral circuitry for operating the photodetection section;
There are cases where a different type of semiconductor material is used.
こうしたカラー用固体撮儂素子基板上に色分解フィルタ
ーの母材の層を厚さ０．５〜２５μｍ程度形成する。こ
の母材は一般にゼラチン、卵白、グリ−、カゼインおよ
びポバール等に感光性を与えた材料が用いらｎる。感光
特性としてはネガ型を用い３６５ｎｍないし４３５ｎｍ
Ｋ感度を持たせるのが一般的である。A base material layer of a color separation filter is formed to a thickness of about 0.5 to 25 μm on the color solid-state photographic device substrate. This matrix is generally made of gelatin, egg white, glycerin, casein, poval, or the like, which has been made photosensitive. As for photosensitive characteristics, use negative type and 365nm to 435nm.
It is common to have K sensitivity.
この層゛にマスク露光法で＠１１００部分２だけ光硬化
させ現儂することによって、色分解フィルター母材の部
分２だけが残される。この部分に所定の分光特性を有す
る染料で染色する。なお、染色法を従来から行なわれて
いる染料水溶液を用いる方法で良い。Only the @1100 portion 2 of this layer is photocured and developed using a mask exposure method, thereby leaving only the portion 2 of the color separation filter base material. This area is dyed with a dye having predetermined spectral characteristics. Note that the dyeing method may be a conventional method using an aqueous dye solution.
なお、この第１色目のフィルター母材の層を形成する際
、基板ｌの表面に約０．５〜１μｍの厚さに有機高分子
材料の被膜を形成しておくのが好ましい。この有機高分
子材料の被膜によって基板表面がより平坦化される。こ
れによって次のような利点を生ずる。In addition, when forming the layer of the filter base material of the first color, it is preferable to form a film of an organic polymer material on the surface of the substrate 1 to a thickness of about 0.5 to 1 μm. The surface of the substrate is further planarized by this coating of organic polymer material. This brings about the following advantages.
（υ 基板１中に設けられた半導体装置部分に対し、不
純物等の汚染の保護効果が生ずる。(v) The semiconductor device portion provided in the substrate 1 is protected from contamination such as impurities.
（２）基板１の表面が平坦化され、この上部に形成され
る中間層、フィルター母材の１−等の形成が容易になる
と共に、特に中間層の変形に伴ない生ずる染色時の混色
を切花することが出来る。(2) The surface of the substrate 1 is flattened, making it easier to form the intermediate layer formed on top of the substrate 1, the filter base material 1-, etc., and particularly reducing color mixture during dyeing that occurs due to deformation of the intermediate layer. Can be cut flowers.
（３）色フィルターの加工工程で、不純物の付着面積が
小さくなり、基板中の半導体装置の汚染防止に有用であ
る。(3) In the color filter processing process, the adhesion area of impurities is reduced, which is useful for preventing contamination of semiconductor devices in the substrate.
なお、この有機高分子材料も前述の中間層等を形成する
ための放射線感応性有機高分子材料を用いるのが、後の
加工に有利である。Note that it is advantageous for later processing to use a radiation-sensitive organic polymer material for forming the above-mentioned intermediate layer and the like as the organic polymer material.
次いで透明な耐汚色性の中間層５を厚さ０．５〜１．５
μｍに被覆する。第１図がこの状態である。Next, a transparent stain-resistant intermediate layer 5 is formed to a thickness of 0.5 to 1.5 mm.
Coat to μm. FIG. 1 shows this state.
この中間層に前述の放射線感応性有機高分子材料を用い
る。この場合、色分解フィルター母材の感光特性と異な
る放射線感応特性を有する如く選択するのが良いことは
前述した。The aforementioned radiation-sensitive organic polymer material is used for this intermediate layer. In this case, as described above, it is preferable to select a material having radiation sensitivity characteristics different from those of the color separation filter base material.
次に、同様に第２図に示すように色フィルター母材の層
を形成し、マスク露光法でＩ！ｉＬ、現債を施こし、第
２色目のフィルター母材３を形成、所定の分光特性を有
する染料で染色する。更に透明な中間層６を被覆する。Next, as shown in FIG. 2, a layer of color filter base material is formed in the same manner as shown in FIG. 2, and I! iL, the current bond is applied to form a second color filter base material 3, and dyed with a dye having predetermined spectral characteristics. Furthermore, a transparent intermediate layer 6 is coated.
さらに同様にｆ＠３図に示すように色フイルタ−４を形
成し、染色し、次いで保護膜７を形成する。Furthermore, as shown in Figure f@3, a color filter 4 is formed and dyed in the same manner, and then a protective film 7 is formed.
なお、中間層６、保護膜７も中間層５と同様の放射線感
応性有機高分子材料を用いる。Note that the intermediate layer 6 and the protective film 7 are also made of the same radiation-sensitive organic polymer material as the intermediate layer 5.
以上の工程で３色の色分解フィルターが形成される。Through the above steps, three color separation filters are formed.
なお、色フィルター形成のための染色は従来法に従って
、染料の調合、フンテント、染色液の温度、染色時間を
決めれば良い。In addition, dyeing for forming a color filter may be performed by determining the dye preparation, dyeing solution, temperature of the dyeing solution, and dyeing time according to conventional methods.
第１表にフィルター母材および中間層および保護層の具
体列を示す。Table 1 shows specific examples of filter base materials, intermediate layers, and protective layers.
αン 染料配合
緑色
青色
赤色
（２）染色温度１時間
緑色 ４０１１１’：、 ２分
青色 ４０Ｃ，１分
赤色 ４０１Ｚ’、 ２分
前述した放射線感応性材料のなかで、たとえばポリグリ
シジルメタクリレート、ポリメチルメタクリルアミドお
よびポリメチルメタクリレートとの共重合体に属するポ
リメチルメタクリレート−メタクリロイルクロリド共重
合体は熱架橋性の材料である。Alpha dye combination Green Blue Red (2) Dyeing temperature 1 hour Green 40111':, 2 minutes Blue 40C, 1 minute Red 401Z', 2 minutes Among the radiation-sensitive materials mentioned above, for example, polyglycidyl methacrylate, polymethyl methacrylate Polymethyl methacrylate-methacryloyl chloride copolymers, which belong to the copolymers with amides and polymethyl methacrylate, are thermally crosslinkable materials.
このような材料の場合、中間層を塗布した後、熱架橋を
生ずる程度の温度で加熱することによって、中間層の耐
水性は向上し、耐染色層としてより有効に作用する。In the case of such materials, by heating the intermediate layer at a temperature that causes thermal crosslinking after coating, the intermediate layer improves its water resistance and functions more effectively as a dye-resistant layer.
加熱温度および時間は各々２００７：１５分間程度行な
えば架橋による高分子化は相当程度進行し、前記の耐水
性等の向上が生じる。If the heating temperature and time are about 2007: 15 minutes, polymerization due to crosslinking will proceed to a considerable extent, and the above-mentioned water resistance etc. will be improved.
この加熱処理は各中間層等の形成後行なわれるのが通常
である。This heat treatment is usually performed after forming each intermediate layer and the like.
また、保護層には、２．２’ 、４．４’−ヒドロキシ
ベンゾフエノン のヨウナ紫外線吸光剤
兼保繰層のポリグリシジルメタクリレート樹脂の架橋剤
を加えて熱架橋（各層形成ごとに２００Ｃ６０分ベーク
した）させ、カラーフィルタ層が作られる。このように
、前掲の特開昭５５−１１５３７１ の類似の方法で、
カラーフィルタ層を形成する。In addition, to the protective layer, a crosslinking agent of polyglycidyl methacrylate resin of 2.2', 4,4'-hydroxybenzophenone, which serves as an ultraviolet light absorber and storage layer, was added and thermally crosslinked (200C for 60 minutes for each layer formation). (baked) to create a color filter layer. In this way, using a method similar to the above-mentioned Japanese Patent Application Laid-Open No. 55-115371,
Form a color filter layer.
ついで東京応化製のｏ、 Ｃ，Ｄ、 （５ｔ−１ｔｏｏ
）を塗布し、２００Ｃで６０分間ベークしてｎが約１．
４２のＳｔＯ，膜を約２５００人形成した。（図示せず
）その上にＡＺ１３５０Ｊのようなホトレジストを塗布
し、９０ｔＺ’２０分プリベークし、露光し、所定、現
ｆ＃！液で現偉し、１４ｏＣボストベークして、ホトレ
ジストのパターンを形成したのち、フッ酸とフッ化アン
モ／の混合液で５ｉｏｔ膜をエツチングした。エツチン
グ後、アセトンでＡＺ１３５０Ｊレジストを除去し、０
．プラズマでｓｉｏ＊をマスクとして該保護層をプラズ
マエッチしてボンデング部等を露出させた。０．プラズ
マは約２’Ｉ’ｏｒｒのガス圧で１００Ｗ〜３００Ｗで
行なった。このようにして所望部分を除去する。こうし
てボンディング・バット部等所望部分が開孔される。第
５図はカラー用固体撮イ象素子の平面図である。シリコ
ンチップ基板内に図のように光検知部１４と光検知部を
駆動する回路１５およびボンデ４フフ部１２が配置され
ている。光検知部には前記の方法によりモザイク状等の
色フィルターが形成さｎている。〜ボンディング部のフ
ィルター材は前記の方法で除去し、ボンディング・バッ
トは露出させである。次にＡ”％又はＡ／−−ｓｉｔＳ
ｔ含有量０．５〜Ｉｗｔ％）をポンディ／グｅパットに
超音波ポンドする。あるいはＡｌ１−８ｎ（Ａｕ含有量
１９ｗ１％）をＡｕ製ボンディングｅパットに熱圧着で
も良い。Then o, C, D, (5t-1too) manufactured by Tokyo Ohka.
) and bake at 200C for 60 minutes until n is approximately 1.
Approximately 2,500 people formed 42 StO films. (not shown) Apply a photoresist such as AZ1350J thereon, pre-bake at 90tZ' for 20 minutes, expose to the desired current f#! A photoresist pattern was formed by etching the film with a solution and post-baking at 14oC, and then the 5iot film was etched with a mixed solution of hydrofluoric acid and ammonium fluoride. After etching, remove the AZ1350J resist with acetone and
．． The protective layer was plasma-etched using sio* as a mask to expose the bonding portion and the like. 0. The plasma was applied at 100W to 300W at a gas pressure of about 2'I'orr. In this way, the desired portion is removed. In this way, a desired portion such as a bonding butt portion is opened. FIG. 5 is a plan view of the color solid-state imaging device. As shown in the figure, a photodetection section 14, a circuit 15 for driving the photodetection section, and a bonder 4/future section 12 are arranged in a silicon chip substrate. A mosaic-like color filter is formed in the light detection section by the method described above. ~The filter material in the bonding area is removed using the method described above, leaving the bonding butt exposed. Then A”% or A/--sitS
(T content 0.5 to Iwt%) is ultrasonically pounded into a pounder/gel pad. Alternatively, Al1-8n (Au content: 19w1%) may be thermocompression bonded to the Au bonding e-pad.
こうしてカラー用固体撮像素子が完成する。In this way, a color solid-state image sensor is completed.
実施例２
実施列１のｓｉｏ、膜形成でｓｉｏ、の代りにＣｒを蒸
着を行った。Ｃｒ蒸着後実施例１と同様にＡＺ１３５０
Ｊのパターンを形成し、エツチングして作ったＣｒをマ
スクとしてＯ，プラズマで核保護１−をエッチした。エ
ッチ後Ｃｒを硝酸第２セリウムアンモン水溶液でエツチ
ング除去した。Example 2 Cr was vapor-deposited in place of sio in Example 1, and in film formation. After Cr vapor deposition, AZ1350 was applied as in Example 1.
A pattern J was formed, and the nuclear protection 1- was etched with O and plasma using the etched Cr as a mask. After etching, Cr was removed by etching with an aqueous ceric ammonium nitrate solution.
実施例３
実施９’ｌＪ１でＳｔＯ，膜のホトエツチングを行なう
代りに無色透明な感光性樹脂例えば東京応化製ＯＭＲ−
８３やコダック製に’ｒＦＲやゼラチンレジストを塗布
し、所定形状に露光１儂する。ついでこの感光性樹脂か
らなるパターンをマスクとして実施列１と同じ条件でＯ
，プラズマで処理して保霞＃ヲ加工した。ゼラチンをマ
スクとする時でかつ吸光剤を含まないＰＧＭＡを保護１
とする時は０．プラズマに対するエッチ速ｉｈマスクの
エッチ速饗がＰ Ｇ Ｍ Ａ膜に較べ約１７２であるの
で、マスクの厚さに保護層の厚さの１／２以上ろればよ
い。０．プラズマは変質で貧化する程度が小さいので、
実用上間＠はなかった。すなわちマスクの除去等は不要
である。その他保護層と同じＰ Ｇ Ｍ Ａ自体をマス
クとすることも可能である。Example 3 Instead of photo-etching the StO film in Example 9'lJ1, a colorless and transparent photosensitive resin such as OMR- manufactured by Tokyo Ohka was used.
83 or Kodak Co., Ltd. is coated with 'rFR or gelatin resist, and exposed to light for one hour in a predetermined shape. Next, using this pattern made of photosensitive resin as a mask, O was applied under the same conditions as in Example 1.
, processed with plasma and processed into Hoka #. Protects PGMA when using gelatin as a mask and does not contain a light absorbing agent 1
0. Since the etch rate of the IH mask for plasma is about 172 times faster than that of the PGM A film, the thickness of the mask need only be 1/2 or more of the thickness of the protective layer. 0. Plasma is less susceptible to deterioration due to alteration, so
In practical terms, there was no time. That is, there is no need to remove the mask. In addition, it is also possible to use the same PGMA itself as the protective layer as a mask.
Ｐ Ｃ’ｖ Ｍ Ａは感光性があるので、保護層として
用いることができる。この時は膜厚を保護層全体の厚さ
の２倍以上とすることが良い。Since P C'v MA is photosensitive, it can be used as a protective layer. At this time, it is preferable that the film thickness be at least twice the thickness of the entire protective layer.
以上実施例の方法で多層の保護層を一括して加工するこ
とができ、スルホールを形成することができた。また低
屈折率のｓｉｏ、をマスクとした場合にはマスクの除去
が不要な上に更にカラーフィルタの透過率を約２％向上
することができた。By the method of the above embodiment, multiple protective layers could be processed all at once, and through holes could be formed. Furthermore, when SIO, which has a low refractive index, was used as a mask, it was not necessary to remove the mask, and the transmittance of the color filter could be further improved by about 2%.
本発明の実施では保護１にポリグリシジルメタクリレー
トを用いたが、保Ｓ層として他の樹＠例えばポリウレタ
ンなどの感光性の獲にも適用できる。In the practice of the present invention, polyglycidyl methacrylate was used for protection 1, but other materials such as photosensitive materials such as polyurethane can also be used as the S retaining layer.
第１図より第４図は本発明のカラー用固体撮イ象素子の
製造方法を示す素子断面図、第５図はカラー用固体撮像
素子の平面図である。
１・・・固体撮イ象素子基板、２，３．４・・・色フィ
ルタ￥Ｊ １ 図
′！ ｚ 図
１ｆＪＪ 図
■ ４ 図1 to 4 are cross-sectional views of the color solid-state image sensing device according to the present invention, and FIG. 5 is a plan view of the color solid-state image sensing device. 1...Solid-state image sensor board, 2, 3.4...Color filter ￥J 1 Figure'! z Figure 1fJJ Figure ■ 4 Figure
Claims (1)
も有する半導体基体の上部に、この光検知要素に対応し
て色分解用フィルタ一部が有機高分子材料の層を介して
設けられた固体撮像素子において、少くとも上記フィル
タ層の最上部に低屈折率被膜を設けてなることを特徴と
するカラー固体撮像素子。 ２、複数の光検知要素が配置さｎた光検知部を少なくと
も有する半導体基体の上部に、所望形状且所定の分光特
性を有する色分解フィルタ一層を設ける工程、および透
光性の放射線感応性有機高分子材料の層を形成する工程
を所望積層数だけ順次繰返して所望の色分解用フィルタ
一部を形成する工程を有し、且所望の前記透光性の放射
線感応性有機高分子材料の層の加工に際し、所定の放射
線を前記放射線感応性有機高分子材料の層に照射し次い
で現像を施こして加工せしむる工程を有する固体撮像素
子の製造方法において、少く共最上段に位置する上記色
分解用フィルタ一層の形成工程の後に、低屈折率膜を設
ける工程、次いで該低屈折率膜を使用して上記色分解用
フィルタ層の所定の領域を除去してスルーホールを設け
る工程とを擁せしめたことを特徴とするカラー固体撮像
素子の製造方法。 ３、Ｉｆ＃許請求の範囲第２項において、上記低屈折率
膜は無色透明無機物および金属被膜のいずれか一方を用
いてなることを特徴とするカラー固体撮像素子の製造方
法。[Claims] 1. On top of a semiconductor substrate having at least a photodetection section in which a plurality of photodetection elements are arranged, a part of a color separation filter corresponding to the photodetection elements is a layer made of an organic polymer material. What is claimed is: 1. A color solid-state image sensor, characterized in that the solid-state image sensor is provided with a low refractive index coating on at least the top of the filter layer. 2. A step of providing a single layer of a color separation filter having a desired shape and predetermined spectral characteristics on the top of a semiconductor substrate having at least a photodetection section in which a plurality of photodetection elements are arranged, and a step of providing a layer of a color separation filter having a desired shape and predetermined spectral characteristics, and a step of forming a part of a desired color separation filter by sequentially repeating the step of forming layers of a polymeric material by a desired number of laminated layers; In the method for manufacturing a solid-state image sensing device, the method includes a step of irradiating the layer of the radiation-sensitive organic polymer material with a predetermined radiation, and then developing and processing the layer. After the step of forming one layer of the color separation filter, a step of providing a low refractive index film, and then a step of using the low refractive index film to remove a predetermined region of the color separation filter layer to provide a through hole. A method for manufacturing a color solid-state image sensor, characterized in that: 3.If# The method of manufacturing a color solid-state image sensor according to claim 2, wherein the low refractive index film is made of either a colorless transparent inorganic material or a metal coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56196802A JPS5898959A (en) | 1981-12-09 | 1981-12-09 | Color solid state image pickup element and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56196802A JPS5898959A (en) | 1981-12-09 | 1981-12-09 | Color solid state image pickup element and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5898959A true JPS5898959A (en) | 1983-06-13 |
| JPH0468788B2 JPH0468788B2 (en) | 1992-11-04 |
Family
ID=16363886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56196802A Granted JPS5898959A (en) | 1981-12-09 | 1981-12-09 | Color solid state image pickup element and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5898959A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59175761A (en) * | 1983-03-26 | 1984-10-04 | Mitsubishi Electric Corp | Manufacture of solid-state image pickup element with color filter |
| JPS6130068A (en) * | 1984-07-23 | 1986-02-12 | Victor Co Of Japan Ltd | Manufacture of colored solid-state image pickup element |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5525210B2 (en) | 2009-08-27 | 2014-06-18 | 小川香料株式会社 | Taste improver for high-intensity sweeteners |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5525026A (en) * | 1978-08-09 | 1980-02-22 | Akai Electric Co Ltd | Production of color filter for single tube color image pickup tube |
| JPS55115371A (en) * | 1979-02-26 | 1980-09-05 | Hitachi Ltd | Manufacturing method of solid color image pickup unit |
-
1981
- 1981-12-09 JP JP56196802A patent/JPS5898959A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5525026A (en) * | 1978-08-09 | 1980-02-22 | Akai Electric Co Ltd | Production of color filter for single tube color image pickup tube |
| JPS55115371A (en) * | 1979-02-26 | 1980-09-05 | Hitachi Ltd | Manufacturing method of solid color image pickup unit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59175761A (en) * | 1983-03-26 | 1984-10-04 | Mitsubishi Electric Corp | Manufacture of solid-state image pickup element with color filter |
| JPS6130068A (en) * | 1984-07-23 | 1986-02-12 | Victor Co Of Japan Ltd | Manufacture of colored solid-state image pickup element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0468788B2 (en) | 1992-11-04 |
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