JPS63289896A - Manufacture of high-density multilayered substrate - Google Patents
Manufacture of high-density multilayered substrateInfo
- Publication number
- JPS63289896A JPS63289896A JP12248687A JP12248687A JPS63289896A JP S63289896 A JPS63289896 A JP S63289896A JP 12248687 A JP12248687 A JP 12248687A JP 12248687 A JP12248687 A JP 12248687A JP S63289896 A JPS63289896 A JP S63289896A
- Authority
- JP
- Japan
- Prior art keywords
- copper
- conductor
- weight
- less
- tio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 title abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052802 copper Inorganic materials 0.000 claims abstract description 27
- 239000010949 copper Substances 0.000 claims abstract description 27
- 239000004020 conductor Substances 0.000 claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 10
- 239000005751 Copper oxide Substances 0.000 claims abstract description 9
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 9
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 10
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 abstract description 8
- 239000002245 particle Substances 0.000 abstract description 8
- 239000000919 ceramic Substances 0.000 abstract description 5
- 229910000679 solder Inorganic materials 0.000 abstract description 3
- 229910017770 Cu—Ag Inorganic materials 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 abstract description 2
- 239000007791 liquid phase Substances 0.000 abstract description 2
- 239000000470 constituent Substances 0.000 abstract 4
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 abstract 3
- 229910000048 titanium hydride Inorganic materials 0.000 abstract 3
- GEYXPJBPASPPLI-UHFFFAOYSA-N manganese(III) oxide Inorganic materials O=[Mn]O[Mn]=O GEYXPJBPASPPLI-UHFFFAOYSA-N 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 1
- CYTYCFOTNPOANT-UHFFFAOYSA-N Perchloroethylene Chemical group ClC(Cl)=C(Cl)Cl CYTYCFOTNPOANT-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は超多ピンのピングリッドアレイＩＣパラゲージ
のように高密度配線を存する多層基板の製造法に関する
。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a multilayer board having high-density wiring, such as a pin grid array IC parameter with a large number of pins.
結晶化ガラスは、熱膨張係数がシリコンに近く・誘電率
が低（、低温焼成が可能であるなどの特性を存するので
、これを主成分とするか或いはこれを含有させたものを
絶縁基板とし、導体材料にはＡｇ、 Ｃｕ等の低融点低
抵抗金属を用いた高密度配線基板が脚光を浴びており、
特開昭５５−１２８９９号公報に見られるように、「銅
の融点よりも低い温度で結晶化するガラス粒子からなる
グリーンシートの表面に銅ペーストを用いてパターン印
刷し、積層一体化した後、所定雰囲気中で焼成するガラ
ス・セラミック措造の製造方法が開示されている。Crystallized glass has properties such as a coefficient of thermal expansion close to that of silicon and a low dielectric constant (and can be fired at low temperatures), so it is possible to use crystallized glass as a main component or contain it as an insulating substrate. , high-density wiring boards using low-melting point, low-resistance metals such as Ag and Cu as conductor materials are in the spotlight.
As seen in Japanese Unexamined Patent Publication No. 55-12899, "After printing a pattern using copper paste on the surface of a green sheet made of glass particles that crystallize at a temperature lower than the melting point of copper, and laminating and integrating, A method of manufacturing a glass-ceramic structure is disclosed, which involves firing in a predetermined atmosphere.
特願昭６１−２９４４５９号ではこの銅ペーストの組成
として銅もしくは酸化銅を銅基型で８０重量％以上と、
Ｍｎ０ｚ １２重量％以下及びＡｇ、ｏ ８重■以下の
うちから選ばれる一種以上とでなるものとし、導体部の
基密性を高めることが発明された。In Japanese Patent Application No. 61-294459, the composition of this copper paste is 80% by weight or more of copper or copper oxide based on copper,
It has been invented to improve the density of the conductor portion by combining MnOz with 12% by weight or less and one or more selected from Ag, O with 8 weight% or less.
しかし同多層基板の最上部のパターンの銅ペーストの接
着強度は０．５Ｋｇ／ｍｎ＋”であり、この接着強度を
高めることが要請されている。However, the adhesive strength of the copper paste in the uppermost pattern of the multilayer board is 0.5 Kg/mn+'', and there is a need to increase this adhesive strength.
本発明はこの問題点を解決することを目的とする。The present invention aims to solve this problem.
問題点を解決するための手段
本発明は４体ペースト中の導体成分として、銅及び酸化
銅のうちから選ばれる１種以上を銅を基準として７７７
重量以上、残部をＭｎＯ２に１２２重量以下、八ｇ２Ｏ
８重量％以下及びＴｉ１ｔ 、Ｔｉ１ｈのうちから選ば
れる１種以上３重量％以下とよりなるものとしたところ
にある。Means for Solving the Problems The present invention uses one or more selected from copper and copper oxide as a conductive component in the four-piece paste, with copper as the standard.
weight or more, the balance is MnO2, 122 weight or less, 8g2O
8% by weight or less, and at least 3% by weight of one or more selected from Ti1t and Ti1h.
４体ペースト中の銅及び酸化銅は、グリーンシートとと
もに還元雰囲気で加熱還元され、焼成されて導体化する
。その含有量は銅基準で７７７ｌｚ以上とした。そして
同時に配合される、ＭｎＯｔは還元されてＭｎｚＯ＊
、ＭｎＯないしＭｎとなり、基板中のセラミックや結晶
化ガラスと銅との濡れ性を高める。但しその含有量が１
２ｉｉ量％を超えると銅粒子同志の焼結を妨げ、リーク
不良又は抵 抗増大を招来するので１２重量％以下とし
た＊ ＡｇｚＯは水素雰囲気中にて１００℃で還元され
て４ｇとなり、所謂銀ろうと称されるＣｕ−Ａｇ合金の
液相を銅粒子間の境界に局部的に形成し、銅粒子同志を
緻密に焼結させる。Copper and copper oxide in the four-body paste are heated and reduced together with the green sheet in a reducing atmosphere, and are fired to become a conductor. Its content was 777 lz or more based on copper. At the same time, MnOt is reduced to MnzO*
, MnO or Mn, and improves the wettability of copper with ceramic or crystallized glass in the substrate. However, the content is 1
If it exceeds 2.2% by weight, it will prevent sintering of the copper particles and cause leakage failure or increase in resistance, so it was set to 12% by weight or less. A liquid phase of a Cu-Ag alloy called wax is locally formed at the boundaries between copper particles, and the copper particles are densely sintered together.
但しその含有■が８重量％を超えると上記銀ろうが基板
、上で玉となってしまい、基板との密着強度の低下を招
来するので８重量％以下とした。However, if the content (1) exceeds 8% by weight, the silver solder will form beads on the substrate, resulting in a decrease in adhesion strength with the substrate, so the content was set to 8% by weight or less.
又、ＴｉＯ２又はＴｉ１ｌｚはメタライズ中よりセラミ
ック中へ拡散して行き、接着強度を高める。ただしそれ
らが３重量％を超えて多いとセラミック中への拡散量が
多くなり過ぎ、絶縁抵抗や耐電圧の低下となる。又、メ
タライズもポーラスになって、導体抵抗も大きくなり過
ぎる。Furthermore, TiO2 or Ti1lz diffuses into the ceramic from the metallization, increasing adhesive strength. However, if their content exceeds 3% by weight, the amount of diffusion into the ceramic becomes too large, resulting in a decrease in insulation resistance and withstand voltage. Moreover, the metallization also becomes porous, and the conductor resistance becomes too large.
実施例１
１） Ｚｎ０４重量％、Ｍｇ０１３重量％、Δ１２０
゜３３重量％、５ｔｏｚ５８ｆｆｉ量％、Ｂ２０．及び
Ｐ２Ｏ．各１重量％となるように、ＺｎＯ、ＭｇＣ０１
、八１（Ｏｌｌ）！、５ｉＯｚ、１ｈＢＯ１及びｌｌ３
ＰＯ，を秤量し、ライカイ機で混合し、アルミナ坩堝を
用いて１４５０℃で熔融した後水中に投入し急冷してガ
ラス化し、次にこれをアルミナ製ボールミルにて平均粒
径２μｍに粉砕してフリットを製造する。Example 1 1) Zn04% by weight, Mg013% by weight, Δ120
゜33% by weight, 5toz58ffi amount%, B20. and P2O. ZnO, MgC01 so that each is 1% by weight
, 81 (Oll)! , 5iOz, 1hBO1 and ll3
PO, was weighed, mixed in a Raikai machine, melted at 1450°C in an alumina crucible, poured into water, rapidly cooled and vitrified, and then ground to an average particle size of 2 μm in an alumina ball mill. Manufacture frit.
２） 上記フリットにポリビニルブチラール、ジオクチ
ルフタレート、の如き有機質のバインターと、パークロ
ルエチレン、ブチルアルコール等の溶剤を混合してスラ
リーを作り、ドクタープレー゛ド法によって厚さ０．６
ｎｕ＋＋のグリーンシートを製造した。2) Mix the above frit with an organic binder such as polyvinyl butyral or dioctyl phthalate and a solvent such as perchloroethylene or butyl alcohol to make a slurry, and then dry it to a thickness of 0.6 cm using the doctor plate method.
A green sheet of nu++ was produced.
３）一方、平均粒径１．５μのＣｕＯを用いその他第１
表に示すような配合のものに有機結合剤と溶剤とを配合
して銅ペーストを作成した。3) On the other hand, using CuO with an average particle size of 1.5μ, other
A copper paste was prepared by adding an organic binder and a solvent to the composition shown in the table.
第 １ 表
４） 前記２）のグリーンシートの表面に、上記３）の
銅ペーストを厚さ２０μｍで、導電層となる配線パター
ンをスクリーン印刷した。Table 1 4) On the surface of the green sheet of 2) above, the copper paste of 3) above was screen printed to a thickness of 20 μm, and a wiring pattern to become a conductive layer.
５）上記配線パターンの２００箇所に３００μｍφの
貫通孔を設は前記メタライズを充填し、以下に積層され
るシート上にも上記配線パターンに対して直角方向で上
記貫通孔を通る位置に同様に配線パターンをスクリーン
印刷した。5) 300μmφ at 200 locations on the above wiring pattern
A through hole was formed and filled with the metallization, and a wiring pattern was similarly screen printed on the sheet to be laminated below at a position passing through the through hole in a direction perpendicular to the wiring pattern.
６） スクリーン印刷したグリーンシートの６枚と、ベ
ースとなる肉厚のシート１枚を積層し、熱圧着した後、
５０Ｘ５０ｍｍに切断した。6) After laminating six screen-printed green sheets and one thick base sheet and bonding them with heat,
It was cut into 50 x 50 mm.
７）切断した積層体を大気で７５０’Ｃまで昇温し、加
熱し２Ｏ．２〜１．０時間保持した。7) The cut laminate was heated to 750'C in the atmosphere and heated to 2O. It was held for 2-1.0 hours.
８）ついで積層体を水素雰囲気中に移し、常温より０．
５℃／分の昇温速度で、３５０’Ｃまで加熱し２Ｏ．５
〜１．５時間保持した後、水素雰囲気中で９５０℃で焼
成した。8) Next, move the laminate into a hydrogen atmosphere and lower the temperature to 0.
Heating to 350'C at a heating rate of 5°C/min to 2O. 5
After holding for ~1.5 hours, it was fired at 950°C in a hydrogen atmosphere.
これによって第１図に示すようにガラス基板１゜１．１
・・・の上に（導体）パターン２，２．２・・・が印刷
され、各基板はスルーホール３．３．３・・・に充填さ
れた導体ペーストによって電気的に導通している７枚の
絶縁基板からなる多Ｉ′！基板を製造した。As a result, as shown in Fig. 1, the glass substrate 1°1.1
(Conductor) patterns 2, 2.2... are printed on ..., and each board is electrically conductive by the conductor paste filled in the through holes 3, 3, 3...7 Polymer I' consisting of two insulating substrates! The substrate was manufactured.
この多ｉ基板についてＨｅディテクターを用いて気密性
を測定したところｌ ｘ １０−”ｃｃ／５ｔｄ−ｓｅ
ｃ以下であった。又接着強度の測定は第２図に示すよう
に結晶化ガラス基板４の上に口１．６ｍｓのパターン５
を有する基板を作り、これに０．６φ龍の銅線を６０５
ｎ／４０Ｐｂの半田で接合した後、銅線を垂直方向に引
っ張ることにより測定した。When we measured the airtightness of this multi-i board using a He detector, we found that it was l x 10-”cc/5td-se
It was below c. In addition, the adhesive strength was measured by placing a pattern 5 with a width of 1.6 ms on the crystallized glass substrate 4 as shown in FIG.
Make a board with 0.6φ dragon copper wire on it.
After joining with n/40Pb solder, the measurement was performed by pulling the copper wire in the vertical direction.
その結果は第２表に示すとおりである。The results are shown in Table 2.
第 ２ 表
又基板に銅メタライズを施し、その上にＮｉめっきを施
した同じ形状のメタライズパターン上に４２７０イ金具
を高温ろ一材で接合した場合も土曜な強度が得られた。Table 2 Also, when a 4270I metal fitting was bonded with a high-temperature filter material to a metallized pattern of the same shape in which copper metallization was applied to a substrate and Ni plating was applied thereto, a similar strength was obtained.
本発明は比較的簡単な方法で特に、ＴｉＯ２もしくはＴ
ｉ１ｌｚを添加した銅ペーストを用いるのみで気密性に
優れ、接着強度の向上した多層基板を容易に製造するこ
とができる。The present invention uses a relatively simple method, in particular TiO2 or T
A multilayer substrate with excellent airtightness and improved adhesive strength can be easily manufactured by simply using a copper paste containing i1lz.
第１図は本発明の一実施例により製造された多Ｆ！基板
の断面図で、第２図は接着強度の測定ピースの平面図で
ある。
１：結晶化ガラス
２：還体ペースト
３ニスルーホール
４：結晶化ガラス
５：パターンFIG. 1 shows a multi-F! manufactured according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of the substrate, and FIG. 2 is a plan view of a piece for measuring adhesive strength. 1: Crystallized glass 2: Reductant paste 3 Varnish through hole 4: Crystallized glass 5: Pattern
Claims (1)
ートの表面に印刷し、積層し、同時焼成する方法におい
て、導体ペースト中の導体成分が銅及び酸化銅のうちか
ら選ばれる一種以上を銅を基準として７７重量％以上と
、残部ＭｎＯ＿２１２重量％以下、Ａｇ＿２Ｏ８重量％
以下及びＴｉＯ＿２、ＴｉＨ＿２のうちから選ばれる一
種３重量％以下とからなることを特徴とする高密度多層
配線基板の製造法A method in which a conductor paste is printed on the surface of a green sheet containing crystallizable glass, laminated, and simultaneously fired, wherein the conductor component in the conductor paste is one or more selected from copper and copper oxide, with copper as the standard. 77% by weight or more, remaining MnO_212% by weight or less, Ag_2O8% by weight
A method for producing a high-density multilayer wiring board characterized by comprising the following and 3% by weight or less of a type selected from TiO_2 and TiH_2
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12248687A JPS63289896A (en) | 1987-05-21 | 1987-05-21 | Manufacture of high-density multilayered substrate |
| US07/133,817 US4871608A (en) | 1986-12-10 | 1987-12-10 | High-density wiring multilayered substrate |
| US07/196,408 US4837408A (en) | 1987-05-21 | 1988-05-20 | High density multilayer wiring board and the manufacturing thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12248687A JPS63289896A (en) | 1987-05-21 | 1987-05-21 | Manufacture of high-density multilayered substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63289896A true JPS63289896A (en) | 1988-11-28 |
| JPH0552078B2 JPH0552078B2 (en) | 1993-08-04 |
Family
ID=14837039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12248687A Granted JPS63289896A (en) | 1986-12-10 | 1987-05-21 | Manufacture of high-density multilayered substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63289896A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5120473A (en) * | 1987-10-12 | 1992-06-09 | Ngk Spark Plug Co., Ltd. | Metallizing composition for use with ceramics |
-
1987
- 1987-05-21 JP JP12248687A patent/JPS63289896A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5120473A (en) * | 1987-10-12 | 1992-06-09 | Ngk Spark Plug Co., Ltd. | Metallizing composition for use with ceramics |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0552078B2 (en) | 1993-08-04 |
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