JP2002015620A - Conductor composition and wiring board using it - Google Patents
Conductor composition and wiring board using itInfo
- Publication number
- JP2002015620A JP2002015620A JP2000194399A JP2000194399A JP2002015620A JP 2002015620 A JP2002015620 A JP 2002015620A JP 2000194399 A JP2000194399 A JP 2000194399A JP 2000194399 A JP2000194399 A JP 2000194399A JP 2002015620 A JP2002015620 A JP 2002015620A
- Authority
- JP
- Japan
- Prior art keywords
- wiring layer
- weight
- parts
- metallized
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Conductive Materials (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、ガラスセラミック
スからなる単板又は積層構造の配線基板に、該基板と同
時焼成して形成されたCuを主成分とするメタライズ配
線層を形成してなる配線基板に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring formed by forming a metallized wiring layer containing Cu as a main component formed by firing simultaneously with a single-plate or laminated wiring substrate made of glass ceramic. It relates to a substrate.
【0002】[0002]
【従来の技術】近年、配線基板においては、高周波回路
の対応性、高密度化、高速化が要求され、アルミナ系セ
ラミック材料に比較して低い誘電率が得られ、配線層の
低抵抗化が可能な低温焼成配線基板が一層注目されてい
る。この低温焼成配線基板は、ガラスセラミックスから
なる絶縁基板に、該基板と同時焼成して形成された銅、
金、銀などの低抵抗金属を主体とするメタライズ配線層
を施した配線基板が知られている。このような配線基板
は、ガラスセラミック組成物からなるシート状成形体に
上記低抵抗金属粉末を含む導体ペーストを印刷した後、
800〜1000℃で同時に焼成して作製される。2. Description of the Related Art In recent years, in a wiring board, compatibility, high density, and high speed of a high-frequency circuit have been demanded, and a dielectric constant lower than that of an alumina-based ceramic material has been obtained. Possible low-temperature fired wiring boards are receiving more attention. This low-temperature fired wiring board is formed on an insulating substrate made of glass ceramic by co-firing with the substrate,
A wiring board provided with a metallized wiring layer mainly composed of a low-resistance metal such as gold or silver is known. Such a wiring board, after printing a conductive paste containing the low-resistance metal powder on a sheet-shaped molded body made of a glass ceramic composition,
It is manufactured by simultaneous firing at 800 to 1000 ° C.
【0003】また、この低温焼成配線基板は、配線層の
低抵抗化、絶縁基板の低誘電率、低誘電損失化によっ
て、半導体素子を収納する半導体素子収納用パッケージ
等の配線基板、携帯電話やパーソナルハンディホンシス
テム、各種衛星通信用に使用される高周波用多層配線基
板などのあらゆる分野への応用が進められている。Further, the low-temperature fired wiring board has a low resistance of a wiring layer and a low dielectric constant and a low dielectric loss of an insulating substrate. Applications to various fields such as personal handy phone systems and high-frequency multilayer wiring boards used for various satellite communications are being promoted.
【0004】低温焼成配線基板に用いる低抵抗の配線層
としては、金系ではコスト的に高く、銀系ではマイグレ
ーションが発生する等の問題から用途などが限定される
のに対して、銅系材料では焼成処理を窒素雰囲気で行う
必要があるものの、配線基板の高密度化、配線基板中の
回路の高周波化の要求に充分応えることが出来ることか
ら銅系材料が配線層を形成するための材料の主流となっ
ている。As a low-resistance wiring layer used for a low-temperature fired wiring board, the use of a gold-based material is limited due to the problem of high cost and the use of a silver-based material due to problems such as migration. Although the baking process needs to be performed in a nitrogen atmosphere, the copper-based material is a material for forming the wiring layer because it can sufficiently meet the demands for higher density of the wiring board and higher frequency of the circuit in the wiring board. Has become mainstream.
【0005】ガラスセラミックスからなる絶縁基板の表
面及び/または内部にCuを主成分とするメタライズ配
線層を形成する具体的方法としては、ガラスセラミック
原料粉末、有機バインダーに溶剤を添加して調製したス
ラリーをドクターブレード法などによってシート状に形
成し、得られたグリーンシートに貫通孔を打ち抜き加工
し、該貫通孔にCuを主成分とする導体ペーストを充填
してビアホール導体を形成し、同時にグリーンシート上
にCuを主成分とする導体ペーストを配線パターン状に
スクリーン印刷法などで印刷形成し、配線パターンやビ
アホール導体が形成されたグリーンシートを複数枚加圧
積層し、800〜1000℃で焼成することにより作製
されている。As a specific method of forming a metallized wiring layer containing Cu as a main component on the surface and / or inside of an insulating substrate made of glass ceramics, a slurry prepared by adding a solvent to a glass ceramic raw material powder and an organic binder is used. Is formed into a sheet shape by a doctor blade method or the like, a through hole is punched into the obtained green sheet, and a via paste is formed by filling the through hole with a conductive paste containing Cu as a main component. A conductor paste containing Cu as a main component is printed and formed into a wiring pattern by screen printing or the like, and a plurality of green sheets on which a wiring pattern and a via-hole conductor are formed are laminated under pressure and fired at 800 to 1000 ° C. It is produced by this.
【0006】また、前記Cuを主成分とする導体ペース
トは、その用途により適宜Ni等との合金あるいは混合
物にて形成されている。(特開平11−66952号、
特開平6−10811号、特開平10−308120
号、特開平10−64332号)。[0006] The conductor paste containing Cu as a main component is formed of an alloy or a mixture with Ni or the like as appropriate depending on the application. (JP-A-11-66952,
JP-A-6-10811, JP-A-10-308120
No., JP-A-10-64332).
【0007】[0007]
【発明が解決しようとする課題】しかしながら、Cuを
主成分とする導体に対して前述のようにNiを添加する
と、焼成過程中にCuとNiが合金化し導体抵抗が上昇
したり、添加したNiが磁器中に過剰に拡散し磁器の誘
電率が上昇することによる電気的特性の劣化が生じると
いう課題があった。However, when Ni is added to a conductor containing Cu as a main component as described above, Cu and Ni are alloyed during the sintering process, so that the conductor resistance is increased or the added Ni is added. However, there is a problem in that electrical characteristics are deteriorated due to excessive diffusion of porcelain into the porcelain and an increase in the dielectric constant of the porcelain.
【0008】本発明は、前記課題を解消せんとしてなさ
れたもので、その目的は、Niを含有する銅配線層とガ
ラスセラミックスからなる絶縁基板を同時焼成しても、
配線層の導体抵抗を上昇させることなく、しかもガラス
セラミックスの電気特性を劣化させずに、かつ配線層と
ガラスセラミックスとの濡れ性を向上せしめ接着強度の
高い配線基板を提供することにある。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problem, and an object of the present invention is to provide a method for simultaneously firing a copper wiring layer containing Ni and an insulating substrate made of glass ceramic.
An object of the present invention is to provide a wiring board having high adhesive strength by increasing the wettability between the wiring layer and the glass ceramic without increasing the conductor resistance of the wiring layer and without deteriorating the electrical characteristics of the glass ceramic.
【0009】[0009]
【課題を解決するための手段】本発明者らは、上記の課
題に対して検討を重ねた結果、ガラスセラミックスから
なる絶縁基板に対して形成するCuを主成分とするメタ
ライズ配線層中に、Niの金属または酸化物(Ni、N
iO)とともに、所定量のCuOを含有せしめることに
より、メタライズ配線層中のCuとNiの合金化を阻害
し、配線層の導体抵抗を上昇させることなく、かつ磁器
中への拡散を抑制しガラスセラミックスの電気特性の劣
化を防止し、しかも配線層とガラスセラミックスとの濡
れ性を良好にし接着強度を大きくできることを知見し
た。Means for Solving the Problems As a result of repeated studies on the above problems, the present inventors have found that a metallized wiring layer mainly composed of Cu formed on an insulating substrate made of glass ceramics has Ni metal or oxide (Ni, N
By containing a predetermined amount of CuO together with iO), the alloying of Cu and Ni in the metallized wiring layer is inhibited, and the diffusion into the porcelain is suppressed without increasing the conductor resistance of the wiring layer, and It has been found that it is possible to prevent the deterioration of the electrical properties of ceramics, to improve the wettability between the wiring layer and the glass ceramics, and to increase the bonding strength.
【0010】即ち、本発明の導体組成物は、ガラスセラ
ミックスと同時焼成できる導体組成物であって、前記導
体組成物がCu100重量部に対して、NiをNiO換
算で1〜10重量部、CuOを0.1〜3重量部の割合
で含有することを特徴とするものである。That is, the conductor composition of the present invention is a conductor composition that can be co-fired with a glass ceramic, wherein the conductor composition is composed of 1 to 10 parts by weight of Ni and 1 to 10 parts by weight of NiO per 100 parts by weight of Cu. In an amount of 0.1 to 3 parts by weight.
【0011】また、本発明の配線基板は、ガラスセラミ
ックスからなる絶縁基板の表面及び/または内部にCu
を主成分とするメタライズ配線層を被着形成してなる配
線基板において、前記メタライズ配線層がCu100重
量部に対して、NiをNiO換算で1〜10重量部、さ
らにCuOを酸化物換算で0.1〜3重量部の割合で含
有することを特徴とするものであり、前記メタライズ配
線層の直下に2〜20μmの領域でNiの拡散層を形成
してなることを特徴とする。Further, the wiring board of the present invention is characterized in that the insulating substrate made of glass ceramic has Cu
In a wiring board having a metallized wiring layer mainly composed of: a metallized wiring layer, Ni is 1 to 10 parts by weight in terms of NiO, and CuO is 0 in terms of oxide based on 100 parts by weight of Cu. 0.1 to 3 parts by weight, characterized in that a Ni diffusion layer is formed in a region of 2 to 20 μm immediately below the metallized wiring layer.
【0012】本発明によればCuを主成分とするメタラ
イズ配線層にNiを添加することによりCuをガラスセ
ラミックスの濡れ性が向上し接着強度が向上する。ま
た、CuOを添加することによりCuOがNiと結びつ
き、更にこれがメタライズ配線層の直下に集結し、いわ
ゆる拡散層を形成する。これによりNiとCuの合金化
を抑制し導体抵抗の上昇を防止し、更にNiの磁器中へ
の過剰な拡散を防止しガラスセラミックスの誘電率、誘
電損失の上昇を抑制し電気的特性の劣化を防ぐことがで
きる。According to the present invention, by adding Ni to the metallized wiring layer containing Cu as a main component, the wettability of Cu to glass ceramics is improved and the bonding strength is improved. Further, by adding CuO, CuO binds to Ni, and this concentrates immediately below the metallized wiring layer to form a so-called diffusion layer. This suppresses the alloying of Ni and Cu, prevents an increase in conductor resistance, further prevents excessive diffusion of Ni into porcelain, suppresses an increase in the dielectric constant and dielectric loss of glass ceramics, and degrades electrical characteristics. Can be prevented.
【0013】[0013]
【発明の実施の形態】以下、本発明の配線基板の一実施
態様について図面に基づいて説明する。なお、説明では
複数のガラスセラミック絶縁層からなる多層配線基板を
用いて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the wiring board of the present invention will be described below with reference to the drawings. The description will be made using a multilayer wiring board including a plurality of glass ceramic insulating layers.
【0014】本発明の配線基板1によれば、絶縁基板2
は、複数のガラスセラミック絶縁層2a〜2dを積層し
た積層体から構成され、その絶縁層2a〜2d間および
絶縁基板2表面には、厚みが5〜25μm程度のCuを
主成分とするメタライズ配線層3が被着形成されてい
る。また、絶縁基板2内には、絶縁層2a〜2dの厚み
方向を貫くように形成された直径が80〜200μm程
度のビアホール導体4が形成され、メタライズ配線層3
と電気的に接続している。According to the wiring board 1 of the present invention, the insulating substrate 2
Is composed of a laminated body in which a plurality of glass ceramic insulating layers 2a to 2d are stacked, and a metallized wiring mainly composed of Cu having a thickness of about 5 to 25 μm is provided between the insulating layers 2a to 2d and on the surface of the insulating substrate 2. Layer 3 is applied. In the insulating substrate 2, a via-hole conductor 4 having a diameter of about 80 to 200 μm formed so as to penetrate the insulating layers 2 a to 2 d in the thickness direction is formed.
Is electrically connected to
【0015】絶縁基板2は、少なくともSiO2を含有
するガラス、あるいはSiO2を含有するガラスとフィ
ラーとの複合材料からなるガラスセラミックスからな
る。具体的には、用いられるガラス成分としては、少な
くともSiO2を含む複数の金属酸化物から構成される
非晶質ガラスあるいは焼成後にコージェライト、ムライ
ト、アノーサイト、セルジアン、スピネル、ガーナイ
ト、ウィレマイト、ドロマイト、リチウムシリケートや
その置換誘導体の結晶を析出する結晶化ガラス等によっ
て構成される。強度を向上させる上では結晶化ガラスが
望ましい。The insulating substrate 2 is made of glass ceramics made of glass containing at least SiO 2 or a composite material of glass containing SiO 2 and a filler. Specifically, the glass component used is an amorphous glass composed of a plurality of metal oxides containing at least SiO 2 or, after firing, cordierite, mullite, anorthite, cellian, spinel, garnitite, willemite, dolomite. , And crystallized glass that precipitates crystals of lithium silicate or a substituted derivative thereof. Crystallized glass is desirable for improving the strength.
【0016】ガラスを構成する成分としては、SiO2
以外にLi2O、K2O、Na2Oなどのアルカリ金属酸
化物、CaO、MgOなどのアルカリ土類金属酸化物、
Al2O3、P2O5、ZnO、B2O3、PbOを含有する
ホウ珪酸ガラスなどが例示できる。また、ガラスに対し
てフィラー成分を添加することによって強度の向上や焼
成温度の制御を行うことができる。具体的なフィラー成
分としては、クオーツ、クリストバライト、石英、コラ
ンダム(α−アルミナ)、ムライト、コージェライト、
フォルステライトなどが例示できる。ガラス成分とフィ
ラー成分とは、ガラス成分が30〜70体積%、フィラ
ー成分が70〜30体積%からなることが適切である。As a component constituting the glass, SiO 2 is used.
Other than these, alkali metal oxides such as Li 2 O, K 2 O, and Na 2 O; alkaline earth metal oxides such as CaO and MgO;
Examples thereof include borosilicate glass containing Al 2 O 3 , P 2 O 5 , ZnO, B 2 O 3 , and PbO. Further, by adding a filler component to the glass, the strength can be improved and the firing temperature can be controlled. Specific filler components include quartz, cristobalite, quartz, corundum (α-alumina), mullite, cordierite,
Forsterite and the like can be exemplified. It is appropriate that the glass component and the filler component comprise 30 to 70% by volume of the glass component and 70 to 30% by volume of the filler component.
【0017】メタライズ配線層3は、Cuを主成分とす
るものであるが、本発明によればCu100重量部に対
して、NiをNiO換算で1〜10重量部、CuOを
0.1〜3重量部の割合で含有してなる導体組成物を焼
成してなるものである。The metallized wiring layer 3 is mainly composed of Cu. According to the present invention, Ni is 1 to 10 parts by weight and CuO is 0.1 to 3 parts by weight with respect to 100 parts by weight of Cu. It is obtained by firing a conductor composition contained in parts by weight.
【0018】この導体組成物において、Niを上記の比
率にしたのは1重量部未満の場合、メタライズ配線層か
らガラスセラミック基板へのNiの拡散量が少なくな
り、メタライズ配線層とガラスセラミック基板の接着強
度が弱くなるためであり、逆に10重量部を超える場
合、CuとNiの合金化が進み導体抵抗が大きくなるた
めである。Ni量は、特に3〜7重量部が望ましい。In this conductor composition, when the ratio of Ni is less than 1 part by weight, the diffusion amount of Ni from the metallized wiring layer to the glass ceramic substrate is reduced, and the metallized wiring layer and the glass ceramic substrate This is because the adhesive strength is weak, and conversely, if it exceeds 10 parts by weight, alloying of Cu and Ni proceeds and the conductor resistance increases. The amount of Ni is particularly preferably 3 to 7 parts by weight.
【0019】また、CuOの量を上記の割合にしたのは
0.1重量部未満の場合、メタライズ中に添加したNi
が磁器中に過剰に拡散したり、その結果ガラスセラミッ
クスの誘電率、誘電損失が劣化し電気的特性が劣化する
ためである。さらにはCuとNiの合金化がすすみ導体
抵抗の上昇も起きる。また3重量部を超える場合、Cu
自体の焼結を阻害しメタライズ配線層とガラスセラミッ
ク基板の接着強度が低下するとともに、導体抵抗が増大
するためである。CuOの量は0.5〜1.5重量部が
特に望ましい。If the amount of CuO is less than 0.1 parts by weight, the amount of NiO added during metallization is less than 0.1 parts by weight.
Is excessively diffused into the porcelain, and as a result, the dielectric constant and dielectric loss of the glass ceramic deteriorate, and the electrical characteristics deteriorate. Further, the alloying of Cu and Ni progresses and the conductor resistance increases. If it exceeds 3 parts by weight, Cu
This is because the sintering of the metallized wiring layer and the glass ceramic substrate are reduced, and the conductor resistance is increased. The amount of CuO is particularly preferably 0.5 to 1.5 parts by weight.
【0020】上記の導体組成物を用いてメタライズ配線
層を形成した場合、焼成後のメタライズ配線層の直下に
はNiの拡散層が形成される。Niは、メタライズ金属
層3中において、金属Niまたは酸化物(NiO)の形
態で存在される。When a metallized wiring layer is formed using the above conductor composition, a Ni diffusion layer is formed immediately below the fired metallized wiring layer. Ni is present in the metallized metal layer 3 in the form of metal Ni or oxide (NiO).
【0021】メタライズ配線層の直下のNiの拡散層は
厚みが2〜20μm、特に5〜10μmであることが適
当である。この拡散層はメタライズ配線層の絶縁基板へ
の密着性を高める大きな要素であって、この拡散層の厚
みが2μmよりも薄いと、メタライズ配線層の絶縁基板
への9密着性が低下するためであり、20μmよりも厚
いと絶縁基板の電気的特性を劣化させてしまうためであ
る。The thickness of the Ni diffusion layer immediately below the metallized wiring layer is suitably 2 to 20 μm, particularly 5 to 10 μm. This diffusion layer is a large factor for enhancing the adhesion of the metallized wiring layer to the insulating substrate. If the thickness of the diffusion layer is smaller than 2 μm, the adhesion of the metallized wiring layer to the insulating substrate is reduced. This is because if it is thicker than 20 μm, the electrical characteristics of the insulating substrate will be deteriorated.
【0022】また、多層配線基板の表面のメタライズ配
線層3は、ICチップなどの各種電子部品5を搭載する
ためのパッドとして、あるいはシールド用導体膜とし
て、さらには、外部回路と接続するための電極パッドと
しても用いられ、各種電子部品5が配線層3に半田や導
電性接着剤などを介して接合される。またビアホール導
体4は、上記のメタライズ配線層3と同様な成分からな
る導体が充填されていることが望ましい。なお、図示し
ていないが、必要に応じて、配線基板の表面には、更
に、珪化タンタル、珪化モリブデンなどの厚膜抵抗体膜
や配線保護膜などを形成しても構わない。The metallized wiring layer 3 on the surface of the multilayer wiring board is used as a pad for mounting various electronic components 5 such as an IC chip, or as a conductive film for shielding, and for connecting to an external circuit. It is also used as an electrode pad, and various electronic components 5 are joined to the wiring layer 3 via solder, a conductive adhesive, or the like. It is desirable that the via-hole conductor 4 is filled with a conductor having the same components as those of the metallized wiring layer 3 described above. Although not shown, a thick-film resistor film such as tantalum silicide or molybdenum silicide, a wiring protection film, or the like may be further formed on the surface of the wiring substrate as necessary.
【0023】また、本発明における表面のメタライズ配
線層の表面には、半田ぬれ性向上のために、Ni、Au
などの金属からなるメッキ層などを適宜形成してもよ
い。In the present invention, the surface of the metallized wiring layer on the surface is formed of Ni or Au on the surface to improve solder wettability.
A plating layer made of such a metal may be appropriately formed.
【0024】次に、本発明の配線基板を作製する方法に
ついて説明する。まず、上述したようなガラス成分、又
はガラス成分とフィラーとを混合してガラスセラミック
組成物を調製し、その混合物に有機バインダーなどを加
えた後、ドクターブレード法、圧延法、プレス法などに
よりシート状に成形してグリーンシートを作製する。Next, a method for manufacturing the wiring board of the present invention will be described. First, a glass component as described above, or a glass component and a filler are mixed to prepare a glass-ceramic composition, an organic binder is added to the mixture, and then a doctor blade method, a rolling method, a pressing method, and the like. To form a green sheet.
【0025】次に、このグリーンシートの表面に導体ペ
ーストを印刷する。用いる導体ペースト中の主成分とな
るCu成分としては、平均粒径が0.5〜10μm、好
ましくは3〜5μmの球状のCu粉末であることが望ま
しい。これはメタライズ配線層の焼結挙動をガラスセラ
ミック基板の焼結挙動を近似させるとともに、印刷精度
の向上をはかるためである。Next, a conductor paste is printed on the surface of the green sheet. The Cu component as a main component in the conductive paste used is desirably a spherical Cu powder having an average particle size of 0.5 to 10 μm, preferably 3 to 5 μm. This is because the sintering behavior of the metallized wiring layer is approximated to the sintering behavior of the glass ceramic substrate, and the printing accuracy is improved.
【0026】本発明によれば、この導体ペースト中に、
前述した通り、Cu100重量部に対して、NiをNi
O換算で1〜10重量部、特に3〜7重量部、さらにC
uOを0.1〜3重量部、特に0.5〜1.5重量部の
割合で配合する。Ni、NiO、CuOはいずれも平均
粒径が0.1〜2μmの粉末として添加することが望ま
しい。また導体ペースト中には無機物成分以外に、アク
リル樹脂などからなる有機バインダーと、α−テルピネ
オール、ジブチルフタレート、ブチルカルビトールなど
の有機溶剤とを均質混合して形成される。有機バインダ
ーは無機物成分100重量部に対して1〜10重量部、
有機溶剤成分は5〜30重量部の割合で混合されること
が望ましい。According to the present invention, in the conductor paste,
As described above, Ni is replaced by Ni with respect to 100 parts by weight of Cu.
1 to 10 parts by weight, particularly 3 to 7 parts by weight in terms of O, and further C
0.1 to 3 parts by weight, especially 0.5 to 1.5 parts by weight of uO is blended. It is desirable to add Ni, NiO, and CuO as powders having an average particle diameter of 0.1 to 2 μm. The conductive paste is formed by homogeneously mixing an organic binder such as an acrylic resin and an organic solvent such as α-terpineol, dibutyl phthalate, and butyl carbitol, in addition to the inorganic components. The organic binder is 1 to 10 parts by weight based on 100 parts by weight of the inorganic component,
The organic solvent component is desirably mixed at a ratio of 5 to 30 parts by weight.
【0027】次に、前記ガラスセラミックグリーンシー
ト上に、上述の導体ペーストを用いてスクリーン印刷法
などにより配線パターン状に印刷する。また、ビアホー
ル導体を形成するには、グリーンシートにレーザーやマ
イクロドリル、パンチングなどにより直径50〜200
μmの貫通孔を形成し、その内部に上述の導体ペースト
を充填する。そして、配線パターンやビアホール導体が
形成されたグリーンシートを積層圧着して積層体を形成
する。Next, a wiring pattern is printed on the glass ceramic green sheet by using the above-mentioned conductor paste by a screen printing method or the like. To form a via-hole conductor, a green sheet having a diameter of 50 to 200 mm is formed by laser, micro drill, punching or the like.
A through hole of μm is formed, and the inside thereof is filled with the above-mentioned conductor paste. Then, the green sheets on which the wiring patterns and the via hole conductors are formed are laminated and pressed to form a laminate.
【0028】その後、この積層体を400〜800℃の
窒素雰囲気中あるいは水蒸気含有窒素雰囲気中で加熱処
理してグリーンシート内やペースト中の有機成分を分解
除去した後、800〜1000℃の窒素雰囲気中あるい
は水蒸気含有窒素雰囲気中で同時焼成することによりメ
タライズ配線層及びビアホール導体を具備する多層配線
基板を作製することができる。Thereafter, the laminate is subjected to heat treatment in a nitrogen atmosphere at 400 to 800 ° C. or in a nitrogen atmosphere containing water vapor to decompose and remove organic components in the green sheet and the paste. By co-firing in a medium or in a nitrogen atmosphere containing water vapor, a multilayer wiring board having a metallized wiring layer and a via-hole conductor can be manufactured.
【0029】また、本発明の配線基板によれば、配線基
板構造が積層構造であっても、内部のメタライズ配線層
のみを絶縁基板と同時に焼成処理し、表面のメタライズ
配線層をすでに焼成された配線基板表面に、内部配線層
と同様、CuとNi、CuOからなる導体ペーストを焼
き付け処理して形成しても構わない。その場合、焼き付
け処理は、窒素雰囲気中で600〜1000℃の温度で
処理することができる。Further, according to the wiring board of the present invention, even if the wiring board structure is a laminated structure, only the internal metallized wiring layer is fired simultaneously with the insulating substrate, and the metallized wiring layer on the surface is already fired. Like the internal wiring layer, a conductive paste made of Cu, Ni, and CuO may be formed on the surface of the wiring board by baking. In that case, the baking treatment can be performed at a temperature of 600 to 1000 ° C. in a nitrogen atmosphere.
【0030】[0030]
【実施例】(実施例1)重量比率で74%SiO2、1
4%Li2O、4%Al2O3、2%P2O5、2%K2O、
2%ZnO、2%Na2O(屈伏点480℃)の組成の
ガラス40体積%に対してフィラー成分としてSiO2
(クオーツ)を30体積%、フォルステライトを30体
積%混合した絶縁基板用のグリーンシートに、分子量3
×105のアクリル系バインダーと可塑剤、分散剤、溶
剤を加えて混合してスラリーを調製し、かかるスラリー
をドクターブレード法により厚さ平均200μmのグリ
ーンシートに成形した。(Example 1) 74% SiO 2 by weight ratio, 1
4% Li 2 O, 4% Al 2 O 3 , 2% P 2 O 5 , 2% K 2 O,
40% by volume of glass having a composition of 2% ZnO and 2% Na 2 O (with a deformation point of 480 ° C.) is SiO 2 as a filler component.
(Quartz) 30% by volume and forsterite 30% by volume mixed in a green sheet for an insulating substrate with a molecular weight of 3
A slurry was prepared by adding and mixing a × 10 5 acrylic binder, a plasticizer, a dispersant, and a solvent, and the slurry was formed into a green sheet having an average thickness of 200 μm by a doctor blade method.
【0031】次に、平均粒径が4μmのCu粉末100
重量部に対して、平均粒径が1μmのNi粉末、NiO
粉末、平均粒径が1μmのCuO粉末をNiO換算およ
びCuO換算でそれぞれ表1に示す割合で秤量し、これ
ら無機物成分100重量部に対して有機バインダーとし
てアクリル樹脂を2重量部、有機溶剤としてα−テルピ
ネオールを15重量部添加混練し、導体ペーストを調製
した。Next, Cu powder 100 having an average particle size of 4 μm
Ni powder having an average particle size of 1 μm, NiO
Powder and CuO powder having an average particle size of 1 μm were weighed in NiO conversion and CuO conversion at the ratios shown in Table 1, respectively. 2 parts by weight of an acrylic resin as an organic binder and α as an organic solvent were added to 100 parts by weight of these inorganic components. -15 parts by weight of terpineol was added and kneaded to prepare a conductor paste.
【0032】かくして得られた導体ペーストを前記ガラ
スセラミックグリーンシート上に接着強度を評価するサ
ンプルとして、焼成後の形状が2mm角、厚さ約15μ
mとなる銅配線用パターン状にスクリーン印刷し、その
下部にグリーンシート4枚を加圧積層した。同時に導体
抵抗を評価するサンプルとして焼成後の形状が幅100
μm、長さ50mm、厚さ15μmとなる配線パターン
を形成し、その下部にグリーンシート4枚を加圧積層し
た。The conductive paste thus obtained was used as a sample for evaluating the adhesive strength on the glass ceramic green sheet, and the shape after firing was 2 mm square and about 15 μm thick.
Then, screen printing was performed to form a copper wiring pattern having a thickness of m, and four green sheets were laminated under the screen by pressure. At the same time, the sample after firing has a width of 100 as a sample for evaluating conductor resistance.
A wiring pattern having a thickness of 50 μm, a length of 50 mm and a thickness of 15 μm was formed, and four green sheets were laminated under the wiring pattern under pressure.
【0033】次いで、この未焼成状態の配線パターンが
形成された積層体を、有機バインダーなどの有機成分を
分解除去するために、水蒸気含有窒素雰囲気中で700
℃の温度で3時間保持して脱脂した後、窒素雰囲気中で
950℃に昇温して1時間保持し配線基板を作製した。Next, in order to decompose and remove organic components such as an organic binder, the laminated body on which the unfired wiring pattern is formed is placed in a steam-containing nitrogen atmosphere for 700 minutes.
After degreasing by holding at a temperature of 3 ° C. for 3 hours, the temperature was raised to 950 ° C. in a nitrogen atmosphere and held for 1 hour to prepare a wiring board.
【0034】得られた配線基板のうち、2mm角の銅配
線層に厚さ1μmのNiメッキを行い、その上に厚さ
0.1μmのAuメッキを施した後、直径0.8mmの
錫メッキ銅線を該メッキ被覆層上に基板と平行に半田付
けし、該錫メッキ銅線を基板に対して垂直方向に曲げ、
該錫メッキ導線を10mm/minの引っ張り速度で垂
直方向に引っ張り、銅配線層が破断したときの最大荷重
を銅配線層の接着強度として評価した。なお、良否の判
断としては、最大荷重が2kg/2mm□を超える場合
を良品とした。In the obtained wiring board, a 2 mm square copper wiring layer is plated with Ni having a thickness of 1 μm, followed by Au plating having a thickness of 0.1 μm, and then tin plating having a diameter of 0.8 mm. Soldering a copper wire on the plating coating layer in parallel with the substrate, bending the tinned copper wire in a direction perpendicular to the substrate,
The tin-plated conductive wire was pulled vertically at a pulling speed of 10 mm / min, and the maximum load when the copper wiring layer was broken was evaluated as the adhesive strength of the copper wiring layer. In addition, when the maximum load exceeded 2 kg / 2 mm square, the quality was judged as good.
【0035】次に、銅配線層の導体抵抗の評価について
は、幅100μm、長さ50mmの銅配線層の抵抗をデ
ジタルマルチメーターにて測定し、銅配線層の実際の
幅、長さを光学顕微鏡にて測定した後、断面を金属顕微
鏡により測定し、得られた結果から抵抗率を算出した。
なお、良否の判断としては、抵抗率が6μΩ・cm以下
を良品とした。Next, regarding the evaluation of the conductor resistance of the copper wiring layer, the resistance of the copper wiring layer having a width of 100 μm and a length of 50 mm was measured with a digital multimeter, and the actual width and length of the copper wiring layer were measured optically. After the measurement with a microscope, the cross section was measured with a metal microscope, and the resistivity was calculated from the obtained result.
The pass / fail judgment was made when the resistivity was 6 μΩ · cm or less.
【0036】さらに、メタライズ配線層の直下における
Niの拡散層の厚みを測定した。測定は、強度評価用の
2mm□のパターンでEPMA(WDS)を用いて加速
電圧15KV、プローブ電流2×10-7Aの条件にて、
Niのカウント数が100カウント以上のエリアを拡散
層として定義して測定した。Further, the thickness of the Ni diffusion layer immediately below the metallized wiring layer was measured. The measurement was performed under the conditions of an acceleration voltage of 15 KV and a probe current of 2 × 10 −7 A using EPMA (WDS) in a 2 mm square pattern for strength evaluation.
The area where the count number of Ni was 100 or more was defined as a diffusion layer and measured.
【0037】[0037]
【表1】 [Table 1]
【0038】表1から明らかなように、試料No.1、
2のようにNiの含有量が1重量部未満の場合、メタラ
イズ配線層中のCuとガラスセラミック基板との濡れ性
が低下し接着強度が低下し、試料No.8のようにNi
の含有量が10重量部を超えるとCuとNiの合金化が
進み導体抵抗が上昇した。また、試料No.9のように
CuOの含有量が0.1重量部未満の場合、CuとNi
の合金化が進み導体抵抗が上昇し、さらにガラセラミッ
クスの電気的特性も劣化した。試料No.13のように
CuOの含有量が3重量部を超えるとCuの焼結を阻害
し接着強度が低下し、更に導体抵抗も上昇した。As is clear from Table 1, the sample No. 1,
When the content of Ni is less than 1 part by weight as in the case of Sample No. 2, the wettability between Cu in the metallized wiring layer and the glass ceramic substrate is reduced, the adhesive strength is reduced, and Sample No. Ni as in 8
When the content exceeds 10 parts by weight, alloying of Cu and Ni progressed and the conductor resistance increased. In addition, the sample No. In the case where the content of CuO is less than 0.1 part by weight as in Example 9, Cu and Ni
Alloying progressed, the conductor resistance increased, and the electrical properties of the glass ceramics also deteriorated. Sample No. When the content of CuO exceeds 3 parts by weight as in 13, the sintering of Cu was inhibited, the adhesive strength was reduced, and the conductor resistance was also increased.
【0039】しかるに、本発明の試料No.3〜7、1
0〜12、14ではいずれも良好な2kg/2mm□以
上の接着強度を示し、かつ6μΩ・cm以下の低い導体
抵抗率を保持している。However, in the case of the sample No. 3-7, 1
In each of Nos. 0 to 12 and 14, good adhesive strength of 2 kg / 2 mm or more was exhibited, and low conductor resistivity of 6 μΩ · cm or less was maintained.
【0040】なお、上述の実施例では、基板構造が積層
体で説明したが、単状のガラスセラミックシート上に上
述のCuを主成分とするメタライズペーストを用いて、
所定の配線パターンを形成し、グリーンシートと所定の
配線パターンを一体的に焼成した配線基板でも構わな
い。In the above embodiment, the substrate structure is described as a laminated body. However, the above-mentioned metallized paste containing Cu as a main component is used on a single glass ceramic sheet.
A wiring board in which a predetermined wiring pattern is formed and the green sheet and the predetermined wiring pattern are integrally fired may be used.
【0041】[0041]
【発明の効果】以上、詳述したように、本発明の配線基
板は、銅メタライズ配線層中にNiとともにCuOを含
有せしめることにより、ガラスセラミック基板との濡れ
性を良好にし、接着強度を高め、磁器中へのNiの過剰
な拡散を抑制することができ電気特性の優れた配線基板
を得ることができる。As described in detail above, the wiring board of the present invention improves the wettability with the glass ceramic substrate and improves the adhesive strength by including CuO together with Ni in the copper metallized wiring layer. In addition, it is possible to suppress excessive diffusion of Ni into the porcelain, and to obtain a wiring board having excellent electric characteristics.
【図1】本発明の配線基板の概略断面図である。FIG. 1 is a schematic sectional view of a wiring board of the present invention.
1 配線基板 2 絶縁基板 3 メタライズ配線層 4 ビアホール導体 5 電子部品 DESCRIPTION OF SYMBOLS 1 Wiring board 2 Insulating board 3 Metallized wiring layer 4 Via-hole conductor 5 Electronic component
フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) // H01B 1/00 H01B 1/00 L 1/22 1/22 A Fターム(参考) 4E351 AA07 BB01 BB24 BB31 BB36 CC12 CC22 DD04 DD19 DD21 EE02 EE03 GG02 GG06 GG15 5E343 AA02 AA23 BB14 BB16 BB24 BB44 BB53 BB72 DD01 ER35 GG02 GG13 GG18 5G301 DA06 DA33 DD01 Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat II (reference) // H01B 1/00 H01B 1/00 L 1/22 1/22 A F term (reference) 4E351 AA07 BB01 BB24 BB31 BB36 CC12 CC22 DD04 DD19 DD21 EE02 EE03 GG02 GG06 GG15 5E343 AA02 AA23 BB14 BB16 BB24 BB44 BB53 BB72 DD01 ER35 GG02 GG13 GG18 5G301 DA06 DA33 DD01
Claims (2)
組成物であって、前記導体組成物がCu100重量部に
対して、NiをNiO換算で1〜10重量部、CuOを
0.1〜3重量部の割合で含有することを特徴とする導
体組成物。1. A conductor composition which can be co-fired with a glass ceramic, wherein said conductor composition is composed of 1 to 10 parts by weight of Ni and 0.1 to 3 parts by weight of CuO based on 100 parts by weight of Cu. The conductor composition characterized by containing in the following ratio.
面及び/または内部にCuを主成分とするメタライズ配
線層を被着形成してなる配線基板において、請求項1に
記載の導体組成物を塗布、焼成することにより得られ、
前記メタライズ配線層の直下に2〜20μmの領域でN
iの拡散層を形成してなることを特徴とする配線基板。2. A wiring substrate comprising a metallized wiring layer containing Cu as a main component formed on a surface and / or inside of an insulating substrate made of glass ceramic, wherein the conductor composition according to claim 1 is applied. Obtained by firing,
In a region of 2 to 20 μm just below the metallized wiring layer, N
A wiring substrate formed by forming a diffusion layer of i.
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JP2000194399A JP4646362B2 (en) | 2000-06-28 | 2000-06-28 | Conductor composition and wiring board using the same |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006216363A (en) * | 2005-02-03 | 2006-08-17 | Kyocera Corp | Conductor composition, wiring substrate using it and its manufacturing method |
WO2013002308A1 (en) * | 2011-06-29 | 2013-01-03 | 株式会社村田製作所 | Multilayer ceramic substrate and manufacturing method therefor |
CN107533877A (en) * | 2015-05-20 | 2018-01-02 | 住友金属矿山株式会社 | Thick film conductor forms and uses Cu composite creams and thick film conductor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1095686A (en) * | 1996-09-20 | 1998-04-14 | Kyocera Corp | Copper-metalizing composition and glass ceramic wiring substrate using the same |
JPH11186727A (en) * | 1997-12-22 | 1999-07-09 | Kyocera Corp | Wiring board and manufacture thereof |
-
2000
- 2000-06-28 JP JP2000194399A patent/JP4646362B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1095686A (en) * | 1996-09-20 | 1998-04-14 | Kyocera Corp | Copper-metalizing composition and glass ceramic wiring substrate using the same |
JPH11186727A (en) * | 1997-12-22 | 1999-07-09 | Kyocera Corp | Wiring board and manufacture thereof |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006216363A (en) * | 2005-02-03 | 2006-08-17 | Kyocera Corp | Conductor composition, wiring substrate using it and its manufacturing method |
WO2013002308A1 (en) * | 2011-06-29 | 2013-01-03 | 株式会社村田製作所 | Multilayer ceramic substrate and manufacturing method therefor |
CN103650648A (en) * | 2011-06-29 | 2014-03-19 | 株式会社村田制作所 | Multilayer ceramic substrate and manufacturing method therefor |
US9386696B2 (en) | 2011-06-29 | 2016-07-05 | Murata Manufacturing Co., Ltd. | Multilayer ceramic substrate and manufacturing method therefor |
CN107533877A (en) * | 2015-05-20 | 2018-01-02 | 住友金属矿山株式会社 | Thick film conductor forms and uses Cu composite creams and thick film conductor |
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