JPS63289707A - Nonreducible dielectric ceramic constituent - Google Patents
Nonreducible dielectric ceramic constituentInfo
- Publication number
- JPS63289707A JPS63289707A JP62124733A JP12473387A JPS63289707A JP S63289707 A JPS63289707 A JP S63289707A JP 62124733 A JP62124733 A JP 62124733A JP 12473387 A JP12473387 A JP 12473387A JP S63289707 A JPS63289707 A JP S63289707A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- parts
- dielectric ceramic
- specific resistance
- main component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 10
- 239000000470 constituent Substances 0.000 title abstract 2
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 abstract description 8
- 239000010953 base metal Substances 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052593 corundum Inorganic materials 0.000 abstract description 3
- 229910052759 nickel Inorganic materials 0.000 abstract description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 229910052742 iron Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 abstract 2
- 229910009650 Ti1-yZry Inorganic materials 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 description 8
- 238000010304 firing Methods 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- -1 Mn0z Chemical compound 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は非還元性誘電体磁器組成物に関し、特にたと
えば積層コンデンサなどの誘電体材料として好適な非還
元性誘電体磁器組成物に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a non-reducible dielectric ceramic composition, and more particularly to a non-reducible dielectric ceramic composition suitable as a dielectric material for laminated capacitors and the like.
（従来技術）
従来、積層コンデンサを製造する際には、誘電体グリー
ンシートの上面にたとえば印刷することによって内部電
極となる金属層を形成し、それを複数枚積み重ねて圧着
、一体化した後、焼成するという工程が採用されている
。(Prior art) Conventionally, when manufacturing a multilayer capacitor, a metal layer that will become an internal electrode is formed by printing on the top surface of a dielectric green sheet, and after stacking a plurality of layers and crimping and integrating them, A firing process is used.
（発明が解決しようとする問題点）
従来の誘電体磁器材料は、中性または還元性の低酸素分
圧下で焼成すると還元され、半導体化するという性質を
有していた。そのため、内部電極の材料として、誘電体
磁器材料の焼結する温度で熔融せず、かつ誘電体磁器材
料を半導体化しない高い酸素分圧の下で焼成しても酸化
されない、たとえばパラジウム、白金などの貴金属を用
いなければならず、製造される積層コンデンサの小型大
容量化および低価格化の大きな妨げとなっていた。(Problems to be Solved by the Invention) Conventional dielectric ceramic materials have the property of being reduced and turned into semiconductors when fired under neutral or reducing low oxygen partial pressure. Therefore, materials such as palladium and platinum, which do not melt at the sintering temperature of the dielectric ceramic material and do not oxidize even when fired under high oxygen partial pressures that do not convert the dielectric ceramic material into a semiconductor, can be used as materials for the internal electrodes. This required the use of noble metals, which was a major hindrance to making multilayer capacitors smaller, larger in capacity, and lower in price.
そこで、上述の問題を解決するために、たとえばニッケ
ルなどの安価な卑金属を内部電極の材料として使用する
ことが望まれていた。しかし、このような卑金属を内部
電極の材料として使用し、従来の条件下で焼成すると、
電極材料が酸化したり溶融したりしてしまう。そのため
、このような卑金属を内部電極の材料として使用するた
めに、酸素分圧の低い中性または還元性の雰囲気中にお
いて低温で焼成しても半導体化せず、コンデンサ用の誘
電体磁器材料として十分な比抵抗と優れた誘電特性とを
有する誘電体磁器材料が必要とされていた。Therefore, in order to solve the above-mentioned problems, it has been desired to use an inexpensive base metal such as nickel as a material for the internal electrodes. However, when such base metals are used as internal electrode materials and fired under conventional conditions,
The electrode material will oxidize or melt. Therefore, in order to use such base metals as materials for internal electrodes, they do not turn into semiconductors even when fired at low temperatures in a neutral or reducing atmosphere with low oxygen partial pressure, and are used as dielectric ceramic materials for capacitors. There was a need for dielectric porcelain materials with sufficient resistivity and excellent dielectric properties.
それゆえに、この発明の主たる目的は、酸素分圧の低い
中性または還元性の雰囲気中において、１．３６０℃以
下の温度で焼結し、かつ還元されることなく、静電容量
の温度係数の絶対値が１０Ｑｐｐｍ／”Ｃ以下で、誘電
率が４０以上で、誘電損失が０．１％以下であり、２０
℃における比抵抗および８５℃における比抵抗が１×１
０１３Ω口以上の、非還元性誘電体磁器組成物を提供す
ることである。Therefore, the main object of the present invention is to sinter at a temperature of 1.360°C or lower in a neutral or reducing atmosphere with a low oxygen partial pressure, and to achieve a temperature coefficient of capacitance without being reduced. The absolute value of is 10Qppm/''C or less, the dielectric constant is 40 or more, the dielectric loss is 0.1% or less,
The specific resistance at ℃ and the specific resistance at 85℃ are 1×1
It is an object of the present invention to provide a non-reducible dielectric ceramic composition having a resistance of 0.013Ω or more.
（問題点を解決するための手段）
この発明は、一般式（Ｓ ｒ ＋−ｘ Ｃａ ｘ ）
ｍ （Ｔｉ ｌ−ｙ Ｚ ｒ、 ） Ｏｓで表され、
この一般式のモル比率ｘ、ｙおよびｍが、それぞれ２Ｏ
．３０≦ｘ≦０．５０．０．９２≦ｙ≦０．９８、およ
び０．９５≦ｍ≦１．０８の範囲にある主成分に、１０
０重量部の主成分に対して、副成分として、ＭｎをＭｎ
Ｏ，に換算して０．０１〜４．００重量部、Ｓ ｉ Ｏ
，を２．００〜８．００重量部、およびＡｌｔｏｓを０
．０１〜１．００重量部含有した、非還元性誘電体磁器
組成物である。(Means for solving the problem) The present invention solves the problem by solving the general formula (S r +−x Ca x )
m (Til-y Z r, ) Os,
The molar ratios x, y and m of this general formula are each 2O
．． 30≦x≦0.50, 0.92≦y≦0.98, and 0.95≦m≦1.08, 10
Mn was added as a subcomponent to 0 parts by weight of the main component.
0.01 to 4.00 parts by weight converted to O, S i O
, 2.00 to 8.00 parts by weight, and 0 parts by weight of Altos.
．． This is a non-reducible dielectric ceramic composition containing 01 to 1.00 parts by weight.
（発明の効果）
この発明によれば、還元性雰囲気中において、１．３６
０℃以下で焼結し、温度に対する静電容量の温度係数の
絶対値が１１００ｐｐ／”ｃ以下で、誘電率が４０以上
で、誘電損失が０．１％以下であり、２０℃における比
抵抗および８５℃における比抵抗がｌＸｌ０”０ｃｍ以
上の特性を有する非還元性誘電体磁器組成物を得ること
ができる。したがって、この非還元性誘電体磁器組成物
を積層コンデンサ用材料として用いれば、Ｎｉ、Ｆｅ。(Effect of the invention) According to this invention, in a reducing atmosphere, 1.36
Sintered at 0°C or lower, the absolute value of the temperature coefficient of capacitance with respect to temperature is 1100 pp/''c or lower, the dielectric constant is 40 or higher, the dielectric loss is 0.1% or lower, and the specific resistance at 20°C is A non-reducible dielectric ceramic composition having a resistivity at 85° C. of 1×10”0 cm or more can be obtained. Therefore, if this non-reducible dielectric ceramic composition is used as a material for a multilayer capacitor, Ni, Fe.
Ｃｒなどの卑金属を内部電極として使用することが可能
になる。そのため、積層コンデンサの大容量化にともな
う電極のコストの増大を解消することができ、低価格の
積層コンデンサを提供することができる。It becomes possible to use base metals such as Cr as internal electrodes. Therefore, it is possible to eliminate the increase in cost of electrodes due to an increase in the capacity of a multilayer capacitor, and it is possible to provide a low-cost multilayer capacitor.
この発明の上述の目的、その他の目的、特徴および利点
は、以下の実施例の詳細な説明から一層明らかとなろう
。The above objects, other objects, features and advantages of the present invention will become more apparent from the detailed description of the following embodiments.
（実施例）
まず、出発原料として工業用のＳｒＣＯ３，ＣａｃＯ３
，Ｚｒ０ｚ 、ＴｉＯ２、Ｍｎ０ｚ 、Ｓ ｉＯ２およ
びＡＩ！ＺＯ３を準備した。そして、これらの原料を組
成式（Ｓ ｒｌ−ｘ Ｃａｘ ） ｍ （Ｔ ｉ＋−
、Ｚｒｙ”）Ｏ３＋ＭｎＯ，＋Ｓ ｔｏ２＋Ａｌ２Ｏ３
において、表１に示す配合比になるように配合した。(Example) First, industrial SrCO3 and CacO3 were used as starting materials.
, Zr0z, TiO2, Mn0z, SiO2 and AI! ZO3 was prepared. Then, these raw materials are given the compositional formula (S rl-x Cax ) m (T i+-
,Zry”)O3+MnO,+S to2+Al2O3
The ingredients were blended at the blending ratio shown in Table 1.
次に、これらの配合原料をボールミルで湿式混合し、粉
砕した後蒸発乾燥し、自然雰囲気中において１，１５０
℃で２時間仮焼した。そして、仮焼した原料に結合材と
して酢酸ビニル系バインダを５重量部加え、ボールミル
で湿式混合した。さらに、この混合物を蒸発乾燥した後
整粒して粉末原料を得た。得られた粉末原料を２．５ｔ
ｏｎ／−の圧力で直径２０ｍ、厚さ１．２ｎの円板状に
成形した。Next, these blended raw materials were wet mixed in a ball mill, pulverized, and then evaporated to dryness.
It was calcined at ℃ for 2 hours. Then, 5 parts by weight of a vinyl acetate binder was added as a binding material to the calcined raw materials, and wet-mixed in a ball mill. Furthermore, this mixture was evaporated to dryness and then sized to obtain a powder raw material. 2.5 tons of the obtained powder raw material
It was molded into a disk shape with a diameter of 20 m and a thickness of 1.2 nm using on/- pressure.
次に、この円板状の成形物をジルコニア粉末を敷粉とし
たアルミナ質の箱に入れ、自然雰囲気中において５００
℃で２時間酢酸ビニル系バインダを燃焼させた。その後
、体積比率でＨ２：Ｎ、＝３：１００の還元ガス雰囲気
中において、円板状の成形物を１，３００〜１．４４０
℃で２時間焼成して、素子を得た。得られた素子の両面
にＩｎ−Ｇａ合金を塗布して電極を形成し、試料（コン
デンサ）を作成した。Next, this disc-shaped molded product was placed in an alumina box lined with zirconia powder, and left in a natural atmosphere for 500 min.
The vinyl acetate binder was burned for 2 hours at .degree. Thereafter, in a reducing gas atmosphere with a volume ratio of H2:N = 3:100, a disc-shaped molded product with a volume ratio of 1,300 to 1.440
The device was baked at ℃ for 2 hours to obtain a device. An In-Ga alloy was applied to both sides of the obtained element to form electrodes, thereby creating a sample (capacitor).
そして、得られた試料の誘電率°ε、誘電損失ｔａｎδ
、静電容量の温度係数α（ｐｐｍ／”ｃ）。Then, the dielectric constant °ε and dielectric loss tanδ of the obtained sample are
, temperature coefficient α of capacitance (ppm/”c).
２０℃における比抵抗ρ２゜（９ｃｍ）および８５℃に
おける比抵抗ρ６．（Ωｃ！１）を測定した。Specific resistance ρ2° (9 cm) at 20°C and specific resistance ρ6 at 85°C. (Ωc!1) was measured.
なお、誘電損失ｔａｎδは、１ｋＨｚ、ＩＶｒｍｓ、２
０℃の条件で測定した。Note that the dielectric loss tan δ is 1kHz, IVrms, 2
Measurement was performed at 0°C.
さらに、静電容量の温度係数α（ｐｐｍ／、’Ｃ）は、
２０°Ｃにおける静電容量Ｃ２゜および８５℃における
静電容Ｍ Ｃａ ｓから次式によって求めた。Furthermore, the temperature coefficient α (ppm/, 'C) of capacitance is
It was determined from the capacitance C2° at 20°C and the capacitance M Cas at 85°C using the following equation.
また、２０℃における比抵抗ρ２゜（９口）および８５
℃における比抵抗ρ８．（Ωｃ１１）は、それぞれ２０
°Ｃおよび８５℃において５００■の直流電圧を印加し
たときに流れる電流値より求めた。In addition, the specific resistance ρ2° (9 ports) at 20°C and 85
Specific resistance ρ8 at °C. (Ωc11) are each 20
It was determined from the current value flowing when a DC voltage of 500 μ was applied at 85°C and 85°C.
そして、これらの結果を表２に示した。These results are shown in Table 2.
次に、この発明にかかる非還元性誘電体磁器組成物の主
成分の数値を限定した理由について説明する。Next, the reason for limiting the numerical values of the main components of the non-reducible dielectric ceramic composition according to the present invention will be explained.
つまり、試料番号１のようにＸが０．３０より小さいか
、または試料番号５のようにＸが０．５０より大きいと
、焼成温度が１．］６０℃を超え、かつ静電容量の温度
係数の絶対値が１１００ｐｐ／’ｃより大きくなって好
ましくない。In other words, if X is smaller than 0.30 as in sample number 1, or larger than 0.50 as in sample number 5, the firing temperature is 1. ] 60° C. and the absolute value of the temperature coefficient of capacitance becomes larger than 1100 pp/′c, which is not preferable.
また、試料番号９のようにｙが０．９２より小さいと、
静電容量の温度係数の絶対値が１００ｐｐ ｍ ／ ’
ｃより大きくなり、かつ２０℃における比抵抗および８
５℃における比抵抗がｌＸｌ０１３Ωｃｍより小さくな
って好ましくない。さらに、試料番号６のように、ｙが
０．９８より大きいと、焼成温度が１，３６０℃を超え
、かつ静電容量の温度係数の絶対値が１１００ｐｐ／゛
ｃより大きくなって好ましくない。Also, if y is smaller than 0.92 as in sample number 9,
The absolute value of the temperature coefficient of capacitance is 100 ppm/'
c, and the specific resistance at 20°C and 8
The specific resistance at 5° C. becomes smaller than 1X1013 Ωcm, which is not preferable. Furthermore, if y is larger than 0.98 as in sample number 6, the firing temperature will exceed 1,360° C. and the absolute value of the temperature coefficient of capacitance will become larger than 1,100 pp/゛c, which is not preferable.
また、試料番号１０のようにｍが０．９５より小さいと
、２０℃における比抵抗および８５℃における比抵抗が
１×１０′３ΩＣＩＩＩより小さくなり、かつ誘電損失
が０．１％より大きくなって好ましくない。さらに、試
料番号１４のように、ｍが１．０８より大きいと、焼成
温度が１．３６０℃を超えて好ましくない。Furthermore, if m is smaller than 0.95 as in sample number 10, the specific resistance at 20°C and the specific resistance at 85°C will be smaller than 1×10'3ΩCIII, and the dielectric loss will be larger than 0.1%. Undesirable. Furthermore, if m is larger than 1.08, as in sample number 14, the firing temperature will exceed 1.360° C., which is not preferable.
次に、副成分の含有量の限定理由について説明する。Next, the reason for limiting the content of subcomponents will be explained.
試料番号１５のように、主成分１００重量部に対してＭ
ｎＯ□の含有量が０．０１重量部より少ないと、焼成温
度が１，３６０℃を超え、かつ誘電損失が０．１％より
大きくなり、さらに２０℃における比抵抗および８５℃
における比抵抗が１ｘ ｌ Ｑ １３Ωｃｍより小さく
なって好ましくない。As in sample number 15, M per 100 parts by weight of the main component.
If the content of nO□ is less than 0.01 part by weight, the firing temperature will exceed 1,360°C, the dielectric loss will be greater than 0.1%, and the resistivity at 20°C and 85°C will increase.
The specific resistance at is less than 1x l Q 13 Ωcm, which is undesirable.
また、試料番号１９のようにＭｎＯ□の含有量が４．０
０重量部より多いと、２０℃における比抵抗および８５
℃における比抵抗が１×１０′３Ωｃｍより小さくなっ
て好ましくない。In addition, as in sample number 19, the content of MnO□ is 4.0
If it is more than 0 parts by weight, the specific resistance at 20°C and 85
The specific resistance at °C becomes less than 1 x 10'3 Ωcm, which is undesirable.
さらに、試料番号２０のように主成分１００重量部に対
してＳｉＯ□の含有量が２．００重量部より少ないと、
焼成温度が１，３６０℃を超えて好ましくない。Furthermore, if the content of SiO□ is less than 2.00 parts by weight with respect to 100 parts by weight of the main component, as in sample number 20,
It is not preferable that the firing temperature exceeds 1,360°C.
また、試料番号２４のようにＳ ｉ Ｏｚの含有量が８
．００重量部より多いと、誘電率が４０より小さくなり
、かつ２０℃における比抵抗および８５℃における比抵
抗が１×１０′３Ω印より小さくなって好ましくない。In addition, as in sample number 24, the S i Oz content is 8
．． If the amount is more than 0.00 parts by weight, the dielectric constant becomes less than 40, and the specific resistance at 20° C. and the specific resistance at 85° C. become smaller than the 1×10′3 Ω mark, which is not preferable.
さらに、試料番号２５のように主成分１００重量部に対
してＡｌｔｏｓの含有量が０．０１重量部より少ないと
、８５℃における比抵抗が１×ＩＱ＋３ΩＣｌ１１より
小さくなって好ましくない。Furthermore, if the content of Altos is less than 0.01 parts by weight based on 100 parts by weight of the main component, as in sample number 25, the specific resistance at 85° C. becomes less than 1×IQ+3ΩCl11, which is not preferable.
また、試料番号２８のようにＡｊｌ！ｚｏｉの含有量が
１．００重量部より多いと、誘電率が４０より小さくな
り、かつ静電容量の温度係数の絶対値が１１００ｐｐ／
”ｃより大きくなって好ましくない。Also, like sample number 28, Ajl! When the content of zoi is more than 1.00 parts by weight, the dielectric constant is less than 40, and the absolute value of the temperature coefficient of capacitance is 1100 pp/
``It is undesirable to be larger than c.
それに対して、この発明の範囲内の試料では、１．３６
０℃以下で焼結し、静電容量の温度係数の絶対値が１１
００ｐｐ／”ｃ以下で、誘電率が４０以上で、誘電損失
が０．１％以下であり、２０℃における比抵抗および８
５℃における比抵抗が１×１０′３Ω口以上である。In contrast, for samples within the scope of this invention, 1.36
Sintered at temperatures below 0°C, with an absolute value of temperature coefficient of capacitance of 11
00 pp/”c or less, dielectric constant is 40 or more, dielectric loss is 0.1% or less, resistivity at 20°C and 8
The specific resistance at 5° C. is 1×10′3Ω or more.
なお、この実施例では、Ｎｚ Ｈｚからなる還元性雰
囲気中で、円板状の成形物を焼成したが、Ａ ｒ 、
ＣＯ，ＣＯｚ 、 Ｈｚ 、 Ｎｚおよびこれらの混合
ガス雰囲気中で円板状の成形物を焼成してもよい。In this example, the disc-shaped molded product was fired in a reducing atmosphere consisting of Nz Hz, but A r ,
The disc-shaped molded product may be fired in an atmosphere of CO, COz, Hz, Nz, or a mixed gas thereof.
Claims (1)
−＿ｙＺｒ＿ｙ）Ｏ＿３で表され、この一般式のモル比
率ｘ、ｙおよびｍが、それぞれ、 ０．３０≦ｘ≦０．５０、 ０．９２≦ｙ≦０．９８、および ０．９５≦ｍ≦１．０８ の範囲にある主成分に、 １００重量部の前記主成分に対して、副成分として、 ＭｎをＭｎＯ＿２に換算して０．０１〜４．００重量部
、 ＳｉＯ＿２を２．００〜８．００重量部、および Ａｌ＿２Ｏ＿３を０．０１〜１．００重量部含有した、
非還元性誘電体磁器組成物。[Claims] General formula (Sr_1_−_xCa_x)_m(Ti_1_
−_yZr_y)O_3, and the molar ratios x, y, and m of this general formula are 0.30≦x≦0.50, 0.92≦y≦0.98, and 0.95≦m≦, respectively. 1.08 parts by weight of the main component, as subcomponents, Mn is converted to MnO_2 in an amount of 0.01 to 4.00 parts by weight, and SiO_2 is added in an amount of 2.00 to 8 parts by weight. .00 parts by weight, and 0.01 to 1.00 parts by weight of Al_2O_3.
Non-reducible dielectric ceramic composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62124733A JPS63289707A (en) | 1987-05-20 | 1987-05-20 | Nonreducible dielectric ceramic constituent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62124733A JPS63289707A (en) | 1987-05-20 | 1987-05-20 | Nonreducible dielectric ceramic constituent |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63289707A true JPS63289707A (en) | 1988-11-28 |
Family
ID=14892762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62124733A Pending JPS63289707A (en) | 1987-05-20 | 1987-05-20 | Nonreducible dielectric ceramic constituent |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63289707A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5191408A (en) * | 1990-02-28 | 1993-03-02 | Victor Company Of Japan, Ltd. | Color imaging system with selectively openable optical shutter |
| US5204301A (en) * | 1992-01-31 | 1993-04-20 | Murata Manufacturing Co., Ltd. | Non-reduction type dielectric ceramic composition |
| US5241376A (en) * | 1990-04-17 | 1993-08-31 | Victor Company Of Japan, Ltd. | Cinematographic system |
| WO2000018701A1 (en) * | 1998-09-30 | 2000-04-06 | Tdk Corporation | Unreduced dielectric ceramic material, process for producing the same, and layer-built ceramic capacitor |
| KR100415559B1 (en) * | 2000-03-31 | 2004-01-24 | 삼성전기주식회사 | Dielectric ceramic composition, ceramic capacitor using the composition and process of producing same |
| US6790801B2 (en) * | 2001-12-27 | 2004-09-14 | Samsung Electro-Mechanics Co., Ltd. | Nonreducible dielectric ceramic composition |
| JP2009126754A (en) * | 2007-11-26 | 2009-06-11 | Tdk Corp | Production method for dielectric ceramic composition |
| US7916451B2 (en) * | 2005-04-07 | 2011-03-29 | Kemet Electronics Corporation | C0G multi-layered ceramic capacitor |
| CN110803927A (en) * | 2018-08-06 | 2020-02-18 | 三星电机株式会社 | Dielectric composition and electronic component using the same |
-
1987
- 1987-05-20 JP JP62124733A patent/JPS63289707A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5191408A (en) * | 1990-02-28 | 1993-03-02 | Victor Company Of Japan, Ltd. | Color imaging system with selectively openable optical shutter |
| US5241376A (en) * | 1990-04-17 | 1993-08-31 | Victor Company Of Japan, Ltd. | Cinematographic system |
| US5204301A (en) * | 1992-01-31 | 1993-04-20 | Murata Manufacturing Co., Ltd. | Non-reduction type dielectric ceramic composition |
| EP1036778A4 (en) * | 1998-09-30 | 2009-01-14 | Tdk Corp | Unreduced dielectric ceramic material, process for producing the same, and layer-built ceramic capacitor |
| WO2000018701A1 (en) * | 1998-09-30 | 2000-04-06 | Tdk Corporation | Unreduced dielectric ceramic material, process for producing the same, and layer-built ceramic capacitor |
| EP1036778A1 (en) * | 1998-09-30 | 2000-09-20 | TDK Corporation | Unreduced dielectric ceramic material, process for producing the same, and layer-built ceramic capacitor |
| US6329311B1 (en) | 1998-09-30 | 2001-12-11 | Tdk Corporation | Non-reducible dielectric ceramic material, making method, and multilayer ceramic capacitor |
| KR100415559B1 (en) * | 2000-03-31 | 2004-01-24 | 삼성전기주식회사 | Dielectric ceramic composition, ceramic capacitor using the composition and process of producing same |
| US6790801B2 (en) * | 2001-12-27 | 2004-09-14 | Samsung Electro-Mechanics Co., Ltd. | Nonreducible dielectric ceramic composition |
| US7916451B2 (en) * | 2005-04-07 | 2011-03-29 | Kemet Electronics Corporation | C0G multi-layered ceramic capacitor |
| JP2009126754A (en) * | 2007-11-26 | 2009-06-11 | Tdk Corp | Production method for dielectric ceramic composition |
| US7820578B2 (en) | 2007-11-26 | 2010-10-26 | Tdk Corporation | Dielectric ceramic composition and method of production thereof |
| JP4678022B2 (en) * | 2007-11-26 | 2011-04-27 | Ｔｄｋ株式会社 | Method for producing dielectric ceramic composition |
| CN110803927A (en) * | 2018-08-06 | 2020-02-18 | 三星电机株式会社 | Dielectric composition and electronic component using the same |
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