JPS6327069A - Optical coupler - Google Patents
Optical couplerInfo
- Publication number
- JPS6327069A JPS6327069A JP61170233A JP17023386A JPS6327069A JP S6327069 A JPS6327069 A JP S6327069A JP 61170233 A JP61170233 A JP 61170233A JP 17023386 A JP17023386 A JP 17023386A JP S6327069 A JPS6327069 A JP S6327069A
- Authority
- JP
- Japan
- Prior art keywords
- light
- insulating material
- light emitting
- groove
- dielectric breakdown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 16
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 239000011810 insulating material Substances 0.000 claims description 16
- 230000008878 coupling Effects 0.000 claims description 14
- 238000010168 coupling process Methods 0.000 claims description 14
- 238000005859 coupling reaction Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 12
- 230000015556 catabolic process Effects 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 229920002545 silicone oil Polymers 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000011265 semifinished product Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229920002379 silicone rubber Polymers 0.000 description 3
- 239000004945 silicone rubber Substances 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- -1 POLY (PHENYL Chemical class 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光結合装置に関し、特に樹脂封止型の光結合装
置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical coupling device, and particularly to a resin-sealed optical coupling device.
従来この種の光結合装置は、発光素子と受光素子の間に
光を伝達する目的をもった物質として、固体状又はゴム
状の物質が用いられていた。最も一般的に用いられてい
るのはシリコーンゴムである。第４図に従来の光結合装
置の断面図を示す。Conventionally, this type of optical coupling device has used a solid or rubber-like substance for the purpose of transmitting light between a light emitting element and a light receiving element. The most commonly used is silicone rubber. FIG. 4 shows a cross-sectional view of a conventional optical coupling device.
透光性絶縁物質６はシリコーンゴム、半導体発光素子２
は発光ダイオード、半導体受光素子３はホ１− トラン
ジスタ、封止容器７はエポキシ樹脂でトランスファ・モ
ールドにより成形したものである。Translucent insulating material 6 is silicone rubber, semiconductor light emitting device 2
is a light emitting diode, the semiconductor light receiving element 3 is a transistor, and the sealing container 7 is made of epoxy resin by transfer molding.
上述じな従来の光結合装置は、光を伝達する絶縁物質と
して固体又はゴム状物質を用いるので、その周囲を封止
している固体の封止容器の材料との間に間隙を生じやす
い０例えば、光を伝達する絶縁物質がシリコーンゴム、
封止材料がエポキシ樹脂である場合、両者は化学的に結
合せず、常に間隙を生じている。また、光を伝達する物
質が固体状の透光性のエポキシ樹脂、封止容器が遮光性
のエポキシ樹脂の場合も又同様に両者の間に間隙を生ず
る。内部の透光性物質をトランスファ・モールド等で−
たん成形、硬化した後に封止容器を成形すると、二つの
樹脂は一体化しないがらである。このため第４図に示し
たような構造を持つ光結合装置は、光を伝達する絶縁物
質と封止材料の沿面の絶縁破壊電圧が、その各々の物質
の絶縁破壊電圧に比較して極端に低くなり、高い絶縁耐
圧有する光結合装置を実現する事が困難であるという欠
点があった。Since the above-mentioned conventional optical coupling device uses a solid or rubber-like material as an insulating material that transmits light, it is easy to create a gap between the material and the material of the solid sealed container that seals the surroundings. For example, silicone rubber is an insulating material that transmits light.
When the sealing material is an epoxy resin, the two do not chemically bond, and a gap always exists. Further, when the light transmitting substance is a solid light-transmitting epoxy resin and the sealing container is a light-shielding epoxy resin, a gap is similarly generated between the two. The internal translucent material is transferred using transfer molding, etc.
When a sealed container is molded after being molded and cured, the two resins are not integrated. Therefore, in an optical coupling device having the structure shown in Fig. 4, the dielectric breakdown voltage of the creeping surface of the insulating material and the sealing material that transmits light is extremely high compared to the dielectric breakdown voltage of each material. This has the disadvantage that it is difficult to realize an optical coupling device having a high dielectric strength.
本発明の光結合装置は、光を伝達する物質として液状の
透光性絶縁物質と、その内部に配置された半導体発光素
子及び半導体受光素子と、その透光性絶縁物質を囲む封
止容器を有している。透光性絶縁物質が液状物質である
ので、その容器との間には間隙が生ずることがない。The optical coupling device of the present invention includes a liquid translucent insulating material as a light transmitting substance, a semiconductor light emitting element and a semiconductor light receiving element disposed inside the liquid translucent insulating material, and a sealed container surrounding the translucent insulating material. have. Since the translucent insulating material is a liquid material, there is no gap between it and the container.
次に本発明の実施例について図面を参照して説明する。 Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明の一実施例の断面図である。但し、半導
体発光素子２及び半導体受光素子３は便宜上切断してい
ない。FIG. 1 is a sectional view of an embodiment of the present invention. However, the semiconductor light emitting device 2 and the semiconductor light receiving device 3 are not cut for convenience.
この実施例は、シリコーン油（ＳＩＬＩＣＯＮＥ ０Ｉ
Ｌ）からなる液状の透光性絶縁物質１と、この透光性絶
縁物質１内に対向して配置された発光ダイオードからな
る半導体発光素子２及びホトトランジスタからなる半導
体受光素子３と、透光性絶縁物質１を囲む熱可塑性樹脂
ポリフェニレンスルフィド（ＰＯＬＹ （ＰＨＥＮＹＬ
ＥＮＥＳＵＬＦＩＤＥ））からなる封止容器４を含んで
なるものである。This example uses silicone oil (SILICONE 0I).
A liquid light-transmitting insulating material 1 consisting of L), a semiconductor light-emitting element 2 consisting of a light-emitting diode and a semiconductor light-receiving element 3 consisting of a phototransistor, arranged facing each other in the light-transmitting insulating material 1; Thermoplastic resin polyphenylene sulfide (POLY (PHENYL)
It comprises a sealed container 4 made of ENESULFIDE).
次に、この実施例の製造方法について説明する。Next, the manufacturing method of this example will be explained.
第２図は製造工程における部品配置を示す分解図である
。FIG. 2 is an exploded view showing the arrangement of parts in the manufacturing process.
発光ダイオードからなる発光素子２を設置した電極部材
８と、ホトトランジスタからなる受光素子３を設置した
電極部材９を、ポリフェニレンスルフィドのプリモール
ドからなる容器部材１０゜１１により挟み、２６０℃〜
３００℃で熱圧着して中空のキャビティをもつ半製品を
製作する。容器部材１０の側部には満１２があり、中空
のキャビティはこの溝を通して外部とつながっている。An electrode member 8 on which a light-emitting element 2 made of a light-emitting diode is installed, and an electrode member 9 on which a light-receiving element 3 made of a phototransistor is placed are sandwiched between container members 10 and 11 made of pre-molded polyphenylene sulfide, and heated at 260°C to
A semi-finished product with a hollow cavity is produced by thermocompression bonding at 300°C. On the side of the container member 10 there is a groove 12 through which the hollow cavity communicates with the outside.
第３図は半製品の斜視図である。FIG. 3 is a perspective view of the semi-finished product.
次に溝１２からシリコーン油を注入したのち、矢印の方
向から力を加えながら２６０℃〜３００℃に局所加熱し
て圧着することにより、７１！１２を封止する。最後に
電極部材を整形すると第１図の状態になる。Next, after silicone oil is injected from the groove 12, 71!12 is sealed by applying pressure from the direction of the arrow while locally heating to 260° C. to 300° C. and crimping. Finally, when the electrode member is shaped, it becomes the state shown in FIG.
第５図には、発光受光間の電圧を変化させたときの本発
明の実施例による第１図の構造を持つ光結合装置の絶縁
破壊の発生率Ａと、従来の技術による第２図の構造を持
つ光結合装置Ｂの絶縁破壊の発生率Ｂを示した０本発明
による液状のシリコーン油を透光性絶縁物質として有す
る光結合装置は、従来の光結合装置の２倍以上の絶縁耐
圧を持つことが確かめられた。FIG. 5 shows the occurrence rate A of dielectric breakdown in the optical coupling device having the structure shown in FIG. 1 according to the embodiment of the present invention when the voltage between the emitting and receiving light is changed, and the incidence rate A of the dielectric breakdown in the optical coupling device having the structure shown in FIG. 2 according to the conventional technology. The optical coupling device B of the present invention has a dielectric breakdown occurrence rate B of the optical coupling device B having a structure of It was confirmed that it has.
以上説明したように、本発明は発光素子と受光素子の間
の光を伝達する物質を液状の透光性絶縁物質にすること
により、透光性絶縁物質と周囲を封止している容器との
間隙を無くすることができる結果光結合装置の、絶縁破
壊電圧を大幅に向上させることができる効果がある。As explained above, the present invention uses a liquid light-transmitting insulating material as the substance that transmits light between the light-emitting element and the light-receiving element. As a result of eliminating the gap, the dielectric breakdown voltage of the optical coupling device can be significantly improved.
第１図は本発明の一実施例の断面図、第２図は本発明の
実施例の半製品の製造工程における部品配置を示す分解
図、第３図は本発明の実施例の半製品の斜視図、第４図
は従来例の断面図、第５図は絶縁破壊電圧の比較を示す
特性図である。
１・・・液状の透光性絶縁物質、２・・・半導体発光素
子、３・・・半導体受光素子、４・・・封止容器、５・
・・リード、６・・・透光性絶縁物質、７・・・封止容
器、８．９・・・電極部材、１０．１１・・・容器部材
、１２・・・溝。
ゝ〜、・′
ガ１回
ＦＪ３図Fig. 1 is a sectional view of an embodiment of the present invention, Fig. 2 is an exploded view showing the arrangement of parts in the manufacturing process of a semi-finished product of the embodiment of the invention, and Fig. 3 is a cross-sectional view of the semi-finished product of the embodiment of the invention. FIG. 4 is a perspective view, FIG. 4 is a sectional view of a conventional example, and FIG. 5 is a characteristic diagram showing a comparison of dielectric breakdown voltage. DESCRIPTION OF SYMBOLS 1... Liquid translucent insulating material, 2... Semiconductor light emitting element, 3... Semiconductor light receiving element, 4... Sealing container, 5...
...Lead, 6...Transparent insulating material, 7...Sealing container, 8.9...Electrode member, 10.11...Container member, 12...Groove.ゝ～、・′ ga 1 time FJ3 figure
Claims (1)
された半導体発光素子及び半導体受光素子と、該透光性
絶縁物質を囲む封止容器とを含んでなることを特徴とす
る光結合装置。It is characterized by comprising a liquid translucent insulating material, a semiconductor light emitting element and a semiconductor light receiving element disposed within the translucent insulating material, and a sealed container surrounding the translucent insulating material. Optical coupling device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61170233A JPS6327069A (en) | 1986-07-18 | 1986-07-18 | Optical coupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61170233A JPS6327069A (en) | 1986-07-18 | 1986-07-18 | Optical coupler |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6327069A true JPS6327069A (en) | 1988-02-04 |
Family
ID=15901133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61170233A Pending JPS6327069A (en) | 1986-07-18 | 1986-07-18 | Optical coupler |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6327069A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07335982A (en) * | 1994-06-08 | 1995-12-22 | Sharp Corp | Semiconductor device and its manufacture |
| EP0701289A1 (en) * | 1994-09-08 | 1996-03-13 | Nec Corporation | Photocoupler |
| JP2004526307A (en) * | 2001-01-31 | 2004-08-26 | ジェンテクス・コーポレーション | High power radiation emitter device and heat dissipation package for electronic components |
| US7489031B2 (en) | 2001-01-31 | 2009-02-10 | Gentex Corporation | High power radiation emitter device and heat dissipating package for electronic components |
-
1986
- 1986-07-18 JP JP61170233A patent/JPS6327069A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07335982A (en) * | 1994-06-08 | 1995-12-22 | Sharp Corp | Semiconductor device and its manufacture |
| EP0701289A1 (en) * | 1994-09-08 | 1996-03-13 | Nec Corporation | Photocoupler |
| US5665983A (en) * | 1994-09-08 | 1997-09-09 | Nec Corporation | Photocoupler device having light emitting device and photo detector |
| JP2004526307A (en) * | 2001-01-31 | 2004-08-26 | ジェンテクス・コーポレーション | High power radiation emitter device and heat dissipation package for electronic components |
| US7489031B2 (en) | 2001-01-31 | 2009-02-10 | Gentex Corporation | High power radiation emitter device and heat dissipating package for electronic components |
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