JPS5683062A - Photo-semiconductor device - Google Patents

Photo-semiconductor device

Info

Publication number
JPS5683062A
JPS5683062A JP16024679A JP16024679A JPS5683062A JP S5683062 A JPS5683062 A JP S5683062A JP 16024679 A JP16024679 A JP 16024679A JP 16024679 A JP16024679 A JP 16024679A JP S5683062 A JPS5683062 A JP S5683062A
Authority
JP
Japan
Prior art keywords
transmitting resin
light transmitting
resin layer
groove
receiving element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16024679A
Other languages
Japanese (ja)
Other versions
JPS621251B2 (en
Inventor
Toshihiko Kihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16024679A priority Critical patent/JPS5683062A/en
Publication of JPS5683062A publication Critical patent/JPS5683062A/en
Publication of JPS621251B2 publication Critical patent/JPS621251B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To remove thermal distortion and molding distortion generated between a light transmitting resin layer and a non-light transmitting resin layer laminated and covered on the layer, prevent the disconnection of wires and improve an airtight property by boring a groove at the interface side at which the light transmitting resin layer contacts with the non-light transmitting resin layer. CONSTITUTION:A light receiving element 1 and an active circuit element 2 are separately mounted to a lead frame 3 with a floor section of a disposing base, and connected by means of bonding wires 4. A light transmitting resin layer 15 is formed so as to make up a groove 10a between the light receiving element 1 and the active circuit element 2. A transfer mold is executed on the light receiving element 1 with non-light transmitting resin leaving a window 7, a non-light transmitting resin layer 6 is laminated, the lead frame is cut, and the layer 6 is molded. Thus, since the groove 10a formed to the light transmitting resin layer disperses and decreases distortion generated due to the difference of thermal expansivity, the disconnection of the bonding wires is prevented, and an airtight property can be improved.
JP16024679A 1979-12-12 1979-12-12 Photo-semiconductor device Granted JPS5683062A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16024679A JPS5683062A (en) 1979-12-12 1979-12-12 Photo-semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16024679A JPS5683062A (en) 1979-12-12 1979-12-12 Photo-semiconductor device

Publications (2)

Publication Number Publication Date
JPS5683062A true JPS5683062A (en) 1981-07-07
JPS621251B2 JPS621251B2 (en) 1987-01-12

Family

ID=15710850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16024679A Granted JPS5683062A (en) 1979-12-12 1979-12-12 Photo-semiconductor device

Country Status (1)

Country Link
JP (1) JPS5683062A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012777A (en) * 1983-07-01 1985-01-23 Matsushita Electric Ind Co Ltd Photoconductive element
JPS61159751A (en) * 1984-12-29 1986-07-19 Sumitomo Electric Ind Ltd Manufacture of optical signal apparatus
JPH0546057U (en) * 1991-11-18 1993-06-18 和泉電気株式会社 LED display device
JP2004363454A (en) * 2003-06-06 2004-12-24 Stanley Electric Co Ltd Reliable optical semiconductor device
US6885109B2 (en) * 2001-08-21 2005-04-26 Oki Electric Industry Co., Ltd. Semiconductor device having a step-like section on the back side of the substrate, and method for manufacturing the same
JP2007096325A (en) * 2005-09-29 2007-04-12 Osram Opto Semiconductors Gmbh Radiation emission constituting element

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012777A (en) * 1983-07-01 1985-01-23 Matsushita Electric Ind Co Ltd Photoconductive element
JPS61159751A (en) * 1984-12-29 1986-07-19 Sumitomo Electric Ind Ltd Manufacture of optical signal apparatus
JPH0546057U (en) * 1991-11-18 1993-06-18 和泉電気株式会社 LED display device
US6885109B2 (en) * 2001-08-21 2005-04-26 Oki Electric Industry Co., Ltd. Semiconductor device having a step-like section on the back side of the substrate, and method for manufacturing the same
JP2004363454A (en) * 2003-06-06 2004-12-24 Stanley Electric Co Ltd Reliable optical semiconductor device
JP2007096325A (en) * 2005-09-29 2007-04-12 Osram Opto Semiconductors Gmbh Radiation emission constituting element

Also Published As

Publication number Publication date
JPS621251B2 (en) 1987-01-12

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