JPS63266397A - X-ray reflecting mirror - Google Patents
X-ray reflecting mirrorInfo
- Publication number
- JPS63266397A JPS63266397A JP62101345A JP10134587A JPS63266397A JP S63266397 A JPS63266397 A JP S63266397A JP 62101345 A JP62101345 A JP 62101345A JP 10134587 A JP10134587 A JP 10134587A JP S63266397 A JPS63266397 A JP S63266397A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- silicon oxide
- layers
- reflecting mirror
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 13
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 8
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 7
- 229910052762 osmium Inorganic materials 0.000 claims abstract description 7
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 7
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 6
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 6
- 239000006185 dispersion Substances 0.000 claims abstract description 5
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims 2
- 239000002184 metal Substances 0.000 abstract description 15
- 229910052751 metal Inorganic materials 0.000 abstract description 13
- 230000003287 optical effect Effects 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 11
- 150000002739 metals Chemical class 0.000 abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910002804 graphite Inorganic materials 0.000 abstract description 5
- 239000010439 graphite Substances 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract description 3
- 238000002310 reflectometry Methods 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 229910052735 hafnium Inorganic materials 0.000 abstract 1
- 125000006850 spacer group Chemical group 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000001015 X-ray lithography Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、対象波長領域が１人から２００人のＸ線光学
素子、特にＸ線反射鏡に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an X-ray optical element, particularly an X-ray reflecting mirror, whose target wavelength range is from 1 to 200 people.
本発明は、波長が１人から２００人の範囲のＸ線の反射
と分散を必要とする全ての分野に対して、例えば、分光
結晶、モノクロメータ、Ｘ線顕微鏡。The present invention is suitable for all fields requiring reflection and dispersion of X-rays with wavelengths ranging from 1 to 200 nm, such as spectroscopic crystals, monochromators, and X-ray microscopes.
Ｘ線望遠鏡、Ｘ線リソグラフィ、あるいはＸ線を利用し
た分析計測機器などへの広範な応用を有する。It has a wide range of applications such as X-ray telescopes, X-ray lithography, and analytical measurement equipment that uses X-rays.
本発明のＸ線反射鏡においては、ガラス、シリコン、グ
ラファイトあるいは金属などの基板上に酸化シリコンと
金属Ｎ （Ｍｏ、 Ｒｕ、 Ｒｈ、 Ｉ’ｄ、八ｇ、
Ｉｆｆ。In the X-ray reflecting mirror of the present invention, silicon oxide and metal N (Mo, Ru, Rh, I'd, 8g,
If.
Ｔａ、 Ｗ、 Ｒｅ、 Ｏｓ、 Ｉｒ、 ＰＬおよび八
Ｕの中から少な（とも一種以上の元素を含む）とを交互
に積層させることにより形成されている。このＸ線反射
鏡は、結晶性の拘束を受けず、反射率を制御することが
できる。また、１次および高次の反射率が向上し、ある
いは特別な用途に対しては１次の反射率を増加させ高次
の反射率を実質的にゼロにすることができる。It is formed by alternately stacking a small amount of Ta, W, Re, Os, Ir, PL, and 8U (all containing one or more elements). This X-ray reflecting mirror is not restricted by crystallinity and can control reflectance. In addition, the first and higher order reflectances are improved, or for special applications, the first order reflectance can be increased and the higher order reflectance can be reduced to substantially zero.
本発明は、波長が１人から２００人のＸ線領域において
反射と分散を必要とするすべての分野に対して、例えば
、分光結晶５モノクロメータ、Ｘ線ｇｌｉ徽鏡、Ｘ線望
遠鏡、Ｘ線リソグラフィあるいはＸ線を利用する分析計
測機器などの分野への応用が可能である。The present invention is suitable for all fields that require reflection and dispersion in the X-ray region with wavelengths from 1 to 200, such as spectroscopic crystal 5 monochromators, X-ray gli mirrors, X-ray telescopes, It can be applied to fields such as lithography or analytical measurement equipment that uses X-rays.
（従来の技術）
本発明の対象波長領域である１人から２００人の範囲は
、使用する光学素子の面で隣接する波長領域と大きく異
なっている。すなわち、はぼ２００人を境にして、それ
より長波長側では直入射光学系が使用でき、また１人よ
り短波長の領域では結晶光学が使われている。それに対
して、その中間の１人から２００人のＸ線波長領域では
、あらゆる物質の垂直入射に対する反射率が実用上はと
んどゼロになるため、反射面にすれすれに光を入射させ
る斜入射光学系が一般に用いられている。(Prior Art) The target wavelength range of the present invention, which is a range of 1 to 200 people, is significantly different from adjacent wavelength ranges in terms of the optical elements used. That is, a direct incidence optical system can be used for wavelengths longer than 200 people, and crystal optics is used for wavelengths shorter than 1 person. On the other hand, in the X-ray wavelength region between 1 and 200, the reflectance of all materials for normal incidence is practically zero, so oblique incidence allows the light to just barely hit the reflective surface. Optical systems are commonly used.
また、Ｘ線領域において反射特性や分散特性を有するも
のとしては、ＬｉＰ、熱分解グラファイト。In addition, LiP and pyrolytic graphite have reflection characteristics and dispersion characteristics in the X-ray region.
ラングミエアープロジェット膜などが知られている。Known examples include Langmier Airprojet membrane.
（発明が解決しようとする問題点〕
従来の斜入射光学系を使ったものでは数１０％の高い反
射率が得られるが、細い入射ビームに対しても人面禎の
光学素子が必要になるばかりでなく、結像光学系では収
差が極端に大きくなる。また、−ＦＣ的に光路が長くな
るという欠点がある。(Problem to be solved by the invention) A high reflectance of several 10% can be obtained using a conventional oblique incidence optical system, but a human-like optical element is required even for a narrow incidence beam. In addition, the aberration becomes extremely large in the imaging optical system.Furthermore, there is a drawback that the optical path becomes longer due to -FC.
Ｌｉｄ、熱分解グラファイトおよびラングミュア−プロ
ジェット膜などから形成された光学素子は、格子間隔の
拘束が大きいためにＸ線の使用波長領域が狭く、使用範
囲が限定されてしまう、さらに、これらの材料は反射率
がすべて望ましい値゛よりも大幅に小さいという欠点が
ある。Optical elements formed from Lid, pyrolytic graphite, Langmuir-Prodgett film, etc. have a narrow lattice spacing constraint, which limits the usable wavelength range of X-rays. All have the disadvantage that their reflectivities are much lower than the desired value.
そこで本発明は、従来のこのような欠点を解決するため
になされたものであり、直入射でも高い反射率を有し、
使用波長範囲が広いＸ線用反射鏡を提供することを目的
としている。また直入射ばかりでなく、ビームの方向を
箭い効率で直角方向に曲げたり、偏光子やフィルタ、ビ
ームスプリンタの役割を果たす光学素子に対する要望を
も満たすことができる。Therefore, the present invention was made to solve these conventional drawbacks, and has a high reflectance even when directly incident on it.
The purpose of this invention is to provide an X-ray reflecting mirror that can be used in a wide range of wavelengths. In addition to direct incidence, it is also possible to bend the direction of the beam at right angles with high efficiency, and to satisfy the need for optical elements that play the role of polarizers, filters, and beam splinters.
上記の問題点を解決するために本発明は、酸化シリコン
と金ｆｌ、ｆｆ１ （Ｍｏ、 Ｒｕ、 Ｒｈ、 Ｐｄ、
Ａｇ、 Ｈｆ、 Ｔａ。In order to solve the above problems, the present invention combines silicon oxide and gold fl, ff1 (Mo, Ru, Rh, Pd,
Ag, Hf, Ta.
Ｗ、 Ｒｅ、 Ｏｓ、 Ｅｒ、 ＰＬおよびＡｕの中か
ら少な（とも一種以上の元素を含む）を交互に積層させ
て形成することにより、直入射でも高い反射率を有し、
使用可能なＸ線の波長領域を１人から２００人までに拡
大することができた。By alternately stacking a small amount of W, Re, Os, Er, PL, and Au (each containing one or more elements), it has a high reflectance even when directly incident on it.
We were able to expand the usable X-ray wavelength range from 1 person to 200 people.
本発明のＸ線用多層膜反射鏡は、境界面で互いに拡ＩＢ
ｃせず、しかも光学定数の太き（異なる２種類の物質、
すなわち酸化シリコンと金属を交互に蒸着し、超精密研
Ｉ９基板上にｌＷＪの厚さが数人〜数１００人の緻密な
連続膜を積層させたものである。The multilayer reflector for X-rays of the present invention mutually expands IB at the interface.
c, and has a large optical constant (two different materials,
That is, silicon oxide and metal are alternately deposited, and a dense continuous film with a thickness of several to several hundred lWJ is laminated on an ultra-precision I9 substrate.
各層対のうち金属層はＸ線を反射する役割をもち、酸化
シリコンの層はバッファーの役割をする。この層対を連
続的に多層化することによって、Ｘ線は各層で多重反射
し反射率を増大させることができる。In each layer pair, the metal layer serves to reflect X-rays, and the silicon oxide layer serves as a buffer. By successively forming multiple layer pairs, X-rays can be reflected multiple times in each layer, increasing the reflectance.
また各層の膜厚を数人から数１００人の間の適切な値に
することによってＸ線の波長が１人から２００人の範囲
でＸ線用の反射鏡として利用することができ、反射率は
１人付近で２０％以上２００人では３０％以上のものが
得られた。In addition, by setting the film thickness of each layer to an appropriate value between several people and several hundred people, it can be used as a reflector for X-rays when the wavelength of X-rays is in the range of one to 200 people, and the reflectance The results were more than 20% for around 1 person and more than 30% for 200 people.
以下本発明を実施例にもとすいて説明する。 The present invention will be explained below using examples.
本発明のＸ４７１反射鏡は、分子線エピタキシー法。The X471 reflecting mirror of the present invention is manufactured using molecular beam epitaxy.
スパッタリング法、イオンビームスパック法、真空薄着
法などによって作製することができるが、ここでは膜作
製に多蒸発源の真空薄着装置を用いた。装置蒸着室内の
真空度はできるだけ高真空が望ましいので、クライオポ
ンプを使って７Ｘ１０−”丁ｏｒｒに保ち蒸着を行った
。加熱には電子ビームを用い、各金属（Ｍｏ、 Ｒｕ、
Ｒｈ、 Ｐｄ、 Ａｇ、 ＩＩＬ Ｔａ、 Ｗ。Although it can be produced by sputtering, ion beam spacing, vacuum thin deposition, etc., a vacuum thin deposition apparatus with multiple evaporation sources was used here to fabricate the film. Since it is desirable that the degree of vacuum in the deposition chamber of the apparatus be as high as possible, a cryopump was used to maintain the vacuum at 7 x 10-''.
Rh, Pd, Ag, IIL Ta, W.
１？ａ、 Ｏｓ、 Ｉｒ、 Ｐｔおよび八Ｕの中から少
なくとも一種以上の元素）と酸化シリコンの２つの藩着
源がそれぞれ独立に加熱される。各金属と酸化シリコン
の蒸着層の厚さは、それぞれ独立の二つのシャッターに
よって制御する。さらにプログラミング機構をもつ水晶
発振式膜厚計を用いて、金属と酸化シリコンとのｎり厚
を設定し、二つのシャッターの開閉を自動的に行い規則
正しい蒸着を繰り返して行わせることによって膜厚と層
対の数を制御する。1? At least one element selected from the group consisting of a, Os, Ir, Pt, and 8U) and silicon oxide are heated independently. The thickness of each metal and silicon oxide deposited layer is controlled by two independent shutters. Furthermore, using a crystal oscillation type film thickness gauge with a programming mechanism, the thickness of the metal and silicon oxide can be set, and the film thickness can be adjusted by automatically opening and closing two shutters to repeat regular deposition. Control the number of layer pairs.
基板にはガラス、シリコンウェハ、グラファイト各種金
属を用いた。基板の表面粗さは１０Å以下であった。蒸
着中は基板の温度が上昇しないように基板を水冷あるい
は液体窒素で冷却した。Glass, silicon wafer, graphite, and various metals were used for the substrate. The surface roughness of the substrate was 10 Å or less. During the deposition, the substrate was cooled with water or liquid nitrogen to prevent the temperature of the substrate from rising.
第１図は本発明のＸ線反射鏡の構成図を示したものであ
る。入射ビーム１は、反射鏡の各層対の金属層３で反射
される。また一部は酸化シリコンｒｃ！Ｊ４の中で多重
反射されて反射ビーム２を構成する。FIG. 1 shows a block diagram of the X-ray reflecting mirror of the present invention. The incident beam 1 is reflected by the metal layer 3 of each layer pair of the reflector. Also some silicon oxide rc! The reflected beam 2 is multiple reflected within J4.
第１表は真空蒸着法で作ったＰＬ−５ｉＯ１多Ｈ膜につ
いてＸｖＡ波長が１．５人から２００人の範囲で測定し
た反射率の値である。ＰｔとＳｉｎｇの膜厚と層対を変
化させることによって各Ｘ線波長で反射率１７〜６０％
が得られた。第１表にはｐｔ−ｓｔｏｗの組合せの結果
についてのみを示したが、金属としてＭｏ、 Ｒｕ。Table 1 shows the reflectance values measured in the XvA wavelength range of 1.5 to 200 for the PL-5iO1 polyH film made by vacuum evaporation. By changing the film thickness and layer pair of Pt and Sing, the reflectance is 17-60% at each X-ray wavelength.
was gotten. Table 1 shows only the results of the pt-stow combination, but Mo and Ru are used as metals.
Ｒｈ、 Ｐｄ、八ｇ、 ｌｌｆ、 Ｔａ、 Ｗ、 Ｒｅ
、 Ｏｓ、 Ｉｒ、 ＰｔおよびＡｕを用いても、ある
いはこれらの金属の合金によってもＰｔ−５ｉｎ、多層
膜と同様に反射率を向上させるという結果が得られた。Rh, Pd, 8g, llf, Ta, W, Re
, Os, Ir, Pt, and Au, or an alloy of these metals, results were obtained in which the reflectance was improved in the same way as the Pt-5in multilayer film.
Ｘ線波長が数人の領域では各金属とＳｉＯ□との層対の
数を増やせば増やすほど反射率が向上するという結果が
得られている。It has been found that in the range of several X-ray wavelengths, the reflectance improves as the number of layer pairs of each metal and SiO□ increases.
しかし、現実的には層対作製上の装置的制約や基板の平
滑性などの制約から１００ｉ以上のものを作ることは困
デ「であることがわかった。However, in reality, it has been found that it is difficult to manufacture a layer of 100 i or more due to restrictions on equipment for manufacturing layer pairs, smoothness of the substrate, and other restrictions.
第２表はＭｏ、 Ｒｕ、 Ｒｈ、 Ｉ’ｄ、八Ｂ、 Ｉ
ＩＬ Ｔａ、 Ｗ、 Ｒｅ。Table 2 is Mo, Ru, Rh, I'd, 8B, I
IL Ta, W, Re.
Ｏｓ、 Ｉｒ、 ＰＬおよび篩の各金属と５ｉ０２との
多層膜の層対３０層についてＸ線波長が、８．３４人と
１１４人のときに測定した反射率の値を示す、Ｘ線の入
射角は１０°である。それぞれの波長において各金属と
Ｓｉｎ！との組合せによる多層膜反射鏡は、反射率５〜
９０％の値が得られた。The incidence of X-rays shows the reflectance values measured when the X-ray wavelength is 8.34 and 114 for 30 layers of a multilayer film of Os, Ir, PL, and 5i02 metals. The angle is 10°. At each wavelength, each metal and Sin! The multilayer reflector in combination with
A value of 90% was obtained.
第 １ 表
第２図は、Ｗ ５１０ｇ７０層膜反射鏡についてＸ線
波長８．３４人での反射率の測定結果を示すものである
。Ｘ線の入射角の００から３０°まで変化させて測定し
た。また、Ｗの膜厚は８人、５ＩＯ１の膜厚は１６人で
ある。Ｘ線の波長と層対の膜厚との関係から、特定の入
射角の付近に反射率が大きくなる部分があられれる。Table 1 and FIG. 2 show the results of measuring the reflectance of the W 510g 70-layer film reflector at an X-ray wavelength of 8.34 people. Measurements were made while changing the incident angle of X-rays from 00° to 30°. Further, the film thickness of W is 8 people, and the film thickness of 5IO1 is 16 people. Due to the relationship between the wavelength of the X-ray and the thickness of the layer pair, there is a portion where the reflectance is high near a specific angle of incidence.
〔発明の効果〕
以上説明したように、本発明はガラス、シリコンウェハ
、グラファイトあるいは各種金属などの基板上に５ｉＯ
Ｊｉと金Ｖ４ｍ （Ｍｏ、 Ｒｕ、 Ｒｈ、 Ｐｄ、八
ｇ。[Effects of the Invention] As explained above, the present invention provides 5iO on a substrate such as glass, silicon wafer, graphite, or various metals.
Ji and gold V4m (Mo, Ru, Rh, Pd, 8g.
Ｉｆｆ、 Ｔａ、 Ｗ、 Ｒｅ、 Ｏｓ、 Ｉｒ、 Ｐ
Ｌおよび八Ｕの中から少なくとも一種以上の元素を含む
層）を交互に積層させることにより形成されるＸ線波長
１人から２００人の範囲で使用可能な多層膜反射鏡であ
る。このＸ線反射鏡は、結晶性の拘束を受けることなく
、制御された反射率を有し、１次および開成の反射率を
向上させ、あるいは特別な用途に対しては１次の反射を
増加さ−き高次の反射を実質的にゼロにすることができ
る。If, Ta, W, Re, Os, Ir, P
This is a multilayer reflector that can be used at an X-ray wavelength range of 1 to 200, and is formed by alternately laminating layers containing at least one element selected from L and 8U. This X-ray reflector has controlled reflectance without crystalline constraints, improving primary and open beam reflectance, or increasing primary reflection for special applications. Higher-order reflections can be made substantially zero.
４、 図１（７１）ｆｆＪ＊な説明
第１図は本発明に係わるＸ線反射鏡の構成を示す断面図
、第２図はＷ −５ｉＯｔ７０居膜反射鏡についてＸ線
波長８．３４人での反射皐の測定結果を示す説明図であ
る。4. Fig. 1 (71) ffJ* Explanation Fig. 1 is a sectional view showing the configuration of the X-ray reflector according to the present invention, and Fig. 2 is a cross-sectional view showing the structure of the X-ray reflector according to the present invention. FIG.
１・・・入射Ｘ線ビーム ２・・・反射Ｘ線ビーム ３・・・金属層 ４・・・ＳｉＯよＴ！！ ５・・・基板 以上 出願人 セイコー電子工業株式会社 Ｘ線反肘鏡の訴め図 第１図 反射子（’／、） 已 ０ ８ 色 Ｓ ８ 。1...Incoming X-ray beam 2...Reflected X-ray beam 3...metal layer 4...SiOyo T! ! 5... Board that's all Applicant: Seiko Electronics Industries Co., Ltd. X-ray anti-elbow mirror illustration Figure 1 Reflector (’/,) 已 0 8 Color S 8.
Claims (2)
の層対は対象波長領域が１Åから２００Åの波長領域で
Ｘ線分散特性を有し、各層対の一層が酸化シリコンであ
り、また各層対の第二層は金属材料によって構成されて
いることを特徴とするＸ線反射鏡。(1) A plurality of layer pairs are formed on top of each other, the layer pairs have X-ray dispersion properties in a target wavelength range of 1 Å to 200 Å, and one layer of each layer pair is made of silicon oxide. An X-ray reflecting mirror characterized in that the second layer of each layer pair is made of a metal material.
ｆ、Ｔａ、Ｗ、Ｒｅ、Ｏｓ、Ｉｒ、ＰｔおよびＡｕの中
から少なくとも一種以上の元素を含むことを特徴とする
特許請求の範囲第１項に記載のＸ線反射鏡。(2) Metal material layer is Mo, Ru, Rh, Pd, Ag, H
The X-ray reflecting mirror according to claim 1, characterized in that it contains at least one element selected from f, Ta, W, Re, Os, Ir, Pt, and Au.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62101345A JPS63266397A (en) | 1987-04-24 | 1987-04-24 | X-ray reflecting mirror |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62101345A JPS63266397A (en) | 1987-04-24 | 1987-04-24 | X-ray reflecting mirror |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63266397A true JPS63266397A (en) | 1988-11-02 |
Family
ID=14298248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62101345A Pending JPS63266397A (en) | 1987-04-24 | 1987-04-24 | X-ray reflecting mirror |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63266397A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5310603A (en) * | 1986-10-01 | 1994-05-10 | Canon Kabushiki Kaisha | Multi-layer reflection mirror for soft X-ray to vacuum ultraviolet ray |
| JPH08199342A (en) * | 1995-01-19 | 1996-08-06 | Rikagaku Kenkyusho | Multilayered film structure for soft x-ray optical device |
| WO2004012236A3 (en) * | 2002-07-30 | 2004-05-27 | Stephen John Henderson | High reflectivity and high flux x-ray optic element and method of making same using ald |
-
1987
- 1987-04-24 JP JP62101345A patent/JPS63266397A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5310603A (en) * | 1986-10-01 | 1994-05-10 | Canon Kabushiki Kaisha | Multi-layer reflection mirror for soft X-ray to vacuum ultraviolet ray |
| JPH08199342A (en) * | 1995-01-19 | 1996-08-06 | Rikagaku Kenkyusho | Multilayered film structure for soft x-ray optical device |
| WO2004012236A3 (en) * | 2002-07-30 | 2004-05-27 | Stephen John Henderson | High reflectivity and high flux x-ray optic element and method of making same using ald |
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