JPH04169898A - Multi-layer mirror structure for x-ray - Google Patents
Multi-layer mirror structure for x-rayInfo
- Publication number
- JPH04169898A JPH04169898A JP2298201A JP29820190A JPH04169898A JP H04169898 A JPH04169898 A JP H04169898A JP 2298201 A JP2298201 A JP 2298201A JP 29820190 A JP29820190 A JP 29820190A JP H04169898 A JPH04169898 A JP H04169898A
- Authority
- JP
- Japan
- Prior art keywords
- shutter
- ray
- film
- layer
- board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 13
- 238000001228 spectrum Methods 0.000 abstract description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052721 tungsten Inorganic materials 0.000 abstract description 11
- 239000010937 tungsten Substances 0.000 abstract description 11
- 229910052799 carbon Inorganic materials 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 3
- 230000008021 deposition Effects 0.000 abstract 3
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 238000001015 X-ray lithography Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は対象波長６Ｍ域が人から２００人でのＸ線反射
率および反射スペクトルを改良したＸ線多層膜鏡構造体
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an X-ray multilayer mirror structure that has improved X-ray reflectance and reflection spectrum in the target wavelength range of 6M to 200 people.
本発明はＸ線波長が１人から２００人の範囲のＸ線の反
射を必要とするほぼすべての分野に対して、例えば、Ｘ
線顕微鏡、Ｘ線望遠鏡、Ｘ線リソグラフィー装置および
その他のＸ線光源を用いた分析。The present invention can be applied to almost all fields that require reflection of X-rays with an X-ray wavelength in the range of 1 to 200.
Analysis using ray microscopes, X-ray telescopes, X-ray lithography equipment and other X-ray light sources.
計測装置など広範な応用を有する。It has a wide range of applications such as measurement equipment.
本発明のＸ線多層膜鏡構造体はガラス、シリコンなどの
表面粗さの極めて小さい基板上に原子番号の大きい物質
の層と原子番号の小さい物質の層とを交互に積層し、各
層内での膜厚が連続的もしくは段階的に変化する多層膜
構造体である。このＸ線多層膜鏡構造体は結晶性の拘束
を受けず制御された反射率を有し、ある特定波長のみの
反射ではなく、反射スペクトル幅の広い反射機能を有す
る。The X-ray multilayer mirror structure of the present invention consists of alternating layers of a material with a high atomic number and a layer of a material with a low atomic number on a substrate with extremely low surface roughness such as glass or silicon. It is a multilayer film structure in which the film thickness changes continuously or stepwise. This X-ray multilayer mirror structure has a controlled reflectance without being constrained by crystallinity, and has a function of reflecting not only a specific wavelength but a wide reflection spectrum.
従来、一般に反射特性を有する結晶および多層膜構造体
はＬｉＦ、シリコン、熱分解グラファイト、ラングミュ
ーア・プロジェクト膜などから形成されている。また、
Ｘ線反射率の改良、使用波長範囲の拡大あるいはた耐環
境性の改良に目的で新しい結晶性材料を考案する試みが
行われている。Conventionally, crystals and multilayer structures with reflective properties have generally been formed from LiF, silicon, pyrolytic graphite, Langmuir project films, and the like. Also,
Attempts are being made to create new crystalline materials for the purpose of improving X-ray reflectance, expanding the usable wavelength range, and improving environmental resistance.
このよ゛うな試みの一つとしてタングステンと炭素ある
いはタングステンとへリリウム等の組み合わせによる積
層膜があり反射率を制御することができる。As one such attempt, there is a laminated film made of a combination of tungsten and carbon or tungsten and helium, etc., which can control the reflectance.
ＬｉＦ、シリコン、熱分解グラファイト等から形成され
た反射鏡構造たいは、格子間隔の拘束が大きく、ブラッ
クの方程式である次式。For reflecting mirror structures formed from LiF, silicon, pyrolytic graphite, etc., the lattice spacing is largely constrained, and Black's equation is expressed by the following equation.
ｎλ＝２６ ｓｉｎθＢ
ｎ ：次数
λ ：波長
ｄ ：格子間隔
θＢ ニブラック角
を満足する波長のみが回折され反射する。同様に、ラン
グミューア・プロジェット膜およびタングステン／炭素
の積層膜についても、各層が均一膜厚に対しては、膜厚
は、上述の式でｄに対応するための上述に式を満足する
波長のみ回折され反射することになる。いずれにしても
回折条件を満足する波長のみの反射であるため、反射に
よって得られるスペクトル幅は小さい。nλ=26 sin θB n: Order λ: Wavelength d: Grid spacing θB Only wavelengths that satisfy the Niblack angle are diffracted and reflected. Similarly, for the Langmuir-Prodgett film and the tungsten/carbon stacked film, if each layer has a uniform thickness, the film thickness is the wavelength that satisfies the above equation to correspond to d in the above equation. Only the light will be diffracted and reflected. In any case, since only wavelengths that satisfy the diffraction conditions are reflected, the spectrum width obtained by reflection is small.
そこで本発明は、従来のこのような欠点を解決し、スペ
クトル幅の広い反射Ｘ線を得る事を目的としている。Therefore, the present invention aims to solve these conventional drawbacks and obtain reflected X-rays with a wide spectral width.
上述の問題を解決するために、本発明は基板上に作製さ
れた各層内での膜厚を連続的もしくは段階的に変化させ
る多層膜構造体にすることにより、スペクトル幅の広い
反射Ｘ線を可能とすることができる。また、使用できる
Ｘ線波長が１人から２００人と範囲の中で任意のスペク
トル領域を反射せることかできる。In order to solve the above-mentioned problems, the present invention creates a multilayer film structure in which the film thickness of each layer fabricated on a substrate is changed continuously or stepwise, thereby making it possible to emit reflected X-rays with a wide spectrum width. It can be made possible. Furthermore, it is possible to reflect any spectral range within the usable X-ray wavelength range of 1 to 200 people.
Ｗ４厚で連続的もしくは段階的に変化しているためブラ
ックの方程式におけるｄの埴は巾を持つことになり、当
該ミラーを反射するＸ線の波長はある程度中の広いもの
となる。Since the thickness of W4 varies continuously or stepwise, the value d in Black's equation has a width, and the wavelength of the X-rays reflected by the mirror is somewhat wide.
（実施例〕
本発明のＸ線多層膜鏡構造体は、分子線エピタキシー＜
ＭＢＥ）法、スパッタリング法、真空蒸着法、イオンビ
ーム法、ＣＶＤ法等によって作製される。暦数はシャッ
ターまたは基板を材料源に対して膜が形成されない幾何
学的な条件の位置に動かすことにより制御される。各層
の膜厚は膜形成が行われている場所での膜のＸＷ反射率
あるいは水晶振動子膜厚計を監視することにより制御さ
れる。基板には、ガラス、シリコン、グラフフィト等を
用い、基板の表面の粗さは、ＩＯＡ以下であった。(Example) The X-ray multilayer mirror structure of the present invention is produced by molecular beam epitaxy <
It is manufactured by MBE) method, sputtering method, vacuum evaporation method, ion beam method, CVD method, etc. The number of ephemerides is controlled by moving the shutter or substrate relative to the source of material to a geometric condition where no film is formed. The thickness of each layer is controlled by monitoring the XW reflectance of the film or a quartz crystal film thickness meter at the location where the film is being formed. The substrate was made of glass, silicon, graphite, etc., and the surface roughness of the substrate was IOA or less.
以下、本発明の実施例を図面を参照しながら説明する。Embodiments of the present invention will be described below with reference to the drawings.
膜作製は多元の真空蒸着装置を用いた。真空度はできる
だけ高いことが望ましいのでターボ分子ポンプとイオン
ポンプを使って到達真空度を１θ″′トールにして蒸着
を行った。加熱装置には、電子ビームを用い、タングス
テンと炭素の２種類の物質を独立に加熱する。タングス
テンと炭素のそれぞれの蒸着層の膜厚の制御はシャッタ
ーの開閉により制御する。各層の膜厚測定Ｘ線回折によ
り決定した。The film was fabricated using a multi-source vacuum evaporation system. It is desirable that the degree of vacuum be as high as possible, so we used a turbo-molecular pump and an ion pump to achieve a vacuum of 1θ''' Torr.We used an electron beam as the heating device, and used two types of tungsten and carbon. The substances are heated independently. The thickness of each evaporated layer of tungsten and carbon is controlled by opening and closing a shutter. The thickness of each layer was determined by X-ray diffraction.
実施例１
第１図本発明に係わるＸ線多層膜鏡構造体の一実施例を
示した説明図である。第１図において、基板１上に作製
する多層膜は炭素膜２およびタングステン膜３で、交互
に積層されている。第２図は本発明に係わるＸ線多層膜
鏡構遺体作製のための真空蒸着装置内の膜制御法の説明
図である。第２図において、４ａおよび４ｂはタングス
テン、炭素の蒸着源を示し、シャッター５を交互に開閉
する。ツヤツタ−７には、ＭＩＣゲージがつけられてお
り、蒸着源の蒸着速度を見積もる。ツヤツタ−８は基板
の中央から外側に時間とともに開き、膜厚を制御する。Embodiment 1 FIG. 1 is an explanatory diagram showing an embodiment of an X-ray multilayer mirror structure according to the present invention. In FIG. 1, the multilayer film fabricated on a substrate 1 includes a carbon film 2 and a tungsten film 3, which are alternately laminated. FIG. 2 is an explanatory diagram of a film control method in a vacuum evaporation apparatus for producing an X-ray multilayer mirror structure according to the present invention. In FIG. 2, 4a and 4b indicate tungsten and carbon vapor deposition sources, and the shutter 5 is alternately opened and closed. The glosser 7 is equipped with a MIC gauge to estimate the evaporation rate of the evaporation source. The glosser 8 opens outward from the center of the substrate over time to control the film thickness.
シャッター８が基板の端まで達したらツヤツタ−７を閉
し、ツヤツタ−８を基板の中央まで戻す。そして再びシ
ャック−７を開け、さらにシャック−８を開き、蒸着膜
を堆積させる。When the shutter 8 reaches the edge of the board, the glosser 7 is closed and the glosser 8 is returned to the center of the board. Then, the shack 7 is opened again, and the shack 8 is further opened to deposit a vapor deposition film.
これらを繰り返すことによって、第１図（ｂｌに示すＸ
線多層膜構造体が作製される。さらにシャッター８をあ
る時間間隔たり停止させることによって第１図ｆａｌの
Ｘ線構造体が作製できる。第３図１０はＸ線波長領域を
２．５人から１６人までの時の、斜入射角３度に対する
本発明に係わるＸ線多層膜鏡構造体の反射スペクトルと
反射強度の関係を示したものである。タングステン層の
厚さは１５人から９０人、炭素層の厚さは１５人から１
５０人まで変化させたときのものである。均一膜厚に対
する反射スペクトルは、スペクトル幅が狭いが、本発明
に係わるＸ線多層鏡構造体は、任意の反射スペクトル幅
を得ることができる。実施例１は、平面上の基板にたい
して適用したものであるが、球面および非球面に対して
もこの多層膜鏡構造体は適用でき、Ｘ線の結像および集
束に対してスペクトル幅の広く、しかも明るい光学系が
可能である。By repeating these steps,
A linear multilayer film structure is produced. Further, by stopping the shutter 8 for a certain period of time, the X-ray structure shown in FIG. 1 can be produced. Figure 3-10 shows the relationship between the reflection spectrum and reflection intensity of the X-ray multilayer mirror structure according to the present invention for an oblique incidence angle of 3 degrees when the X-ray wavelength range is from 2.5 to 16 people. It is something. The thickness of the tungsten layer is from 15 to 90 people, and the thickness of the carbon layer is from 15 to 1
This is what happens when the number of people changes up to 50. Although the reflection spectrum for a uniform film thickness has a narrow spectrum width, the X-ray multilayer mirror structure according to the present invention can obtain any reflection spectrum width. Although Example 1 was applied to a flat substrate, this multilayer mirror structure can also be applied to spherical and aspherical surfaces, and has a wide spectrum width for imaging and focusing X-rays. Furthermore, a bright optical system is possible.
本発明は以上説明したように、ガラス、シリコンなどの
極めて粗さの小さい基板上に原子番号の大きい物質の層
と原子番号の小さい￥！ｙＪｔの層とを交互に積層し各
層内での膜厚が連続的もしくは段階的に変化する多層膜
構造体である。この多層膜構造体は、結晶性の拘束を受
けず、制御された反射率を有し、ある特定波長のみの反
射でなく、反射スペクトル幅の広い反射機能を有する。As explained above, the present invention consists of a layer of a substance with a high atomic number and a layer of a substance with a low atomic number on a substrate with extremely low roughness such as glass or silicon. It is a multilayer film structure in which layers of yJt are alternately laminated and the film thickness within each layer changes continuously or stepwise. This multilayer film structure is not constrained by crystallinity, has a controlled reflectance, and has a function of reflecting not only a specific wavelength but also a wide reflection spectrum.
従って、本発明は、Ｘ線波長が１人から２００人の範囲
のＸ線を比較的広いスペクトル幅で必要とする分野に対
して、例えば、Ｘ線顕微鏡、Ｘ線望遠鏡、Ｘ線リソグラ
フィー装置、およびその他のＸ線光源を用いた分析・計
測装置など広範な応用を有する。Therefore, the present invention is applicable to fields that require X-rays with an X-ray wavelength in the range of 1 to 200 wavelengths in a relatively wide spectral width, such as an X-ray microscope, an X-ray telescope, an X-ray lithography apparatus, It has a wide range of applications, including analysis and measurement devices using X-ray light sources.
また、平面基板上に形成されたものばかりでなく、集光
・結像に用いられる球面・非球面形状に対しても有効で
ある。Moreover, it is effective not only for those formed on a flat substrate, but also for spherical and aspherical shapes used for condensing and imaging.
第１図は本発明に係わるＸ線多層膜鏡構造体の一実施例
を示した説明図、第２０は、本発明のＸ線多層膜鏡構造
体作製のための真空蒸着装置内の膜制御法を説明する図
、第３図は、本発明のＸ線多Ｎ膜鏡構遺体の反射スペク
トルと反射強度の関係を示す図である。
■・・・・・・・基板
２・・・・・・・タングステン膜
３・・・・・・・炭素膜
４ａ・・・ ・・タングステン蒸発源
４ｂ・・・・・・炭素蒸発源
５．７．８・・・ンヤノター
６・・・・・・・ＭＩＣゲージ
９・・・・・・・基板
１０・・・・・・本発明Ｘ線多層膜構造体による反射強
度
１１・・・・・・均一膜厚のＸ線多層膜鏡に対する反射
強度
以 上
出願人 セイコー電子工業株式会社
代理人 弁理士 林 敬 之 助
（Ｏ）（ｂ）
第 １ 図
第 ２ 図FIG. 1 is an explanatory diagram showing one embodiment of the X-ray multilayer mirror structure according to the present invention, and FIG. 20 is a film control diagram in a vacuum evaporation apparatus for producing the X-ray multilayer mirror structure of the present invention. FIG. 3 is a diagram illustrating the relationship between the reflection spectrum and reflection intensity of the X-ray multi-N film mirror structure of the present invention. ■...Substrate 2...Tungsten film 3...Carbon film 4a...Tungsten evaporation source 4b...Carbon evaporation source 5. 7.8... Nyanotar 6... MIC gauge 9... Substrate 10... Reflection intensity by the X-ray multilayer film structure of the present invention 11...・Reflection intensity against an X-ray multilayer mirror with a uniform film thickness
Claims (2)
くは段階的に変化する多層膜構造体であることを特徴と
するＸ線多層膜鏡構造体であることを特徴とするＸ線多
層膜鏡構造体。(1) An X-ray multilayer mirror structure characterized by being a multilayer film structure in which the film thickness within each layer fabricated on a substrate changes continuously or stepwise. Line multilayer mirror structure.
ることを特徴とする請求項１記載のＸ線多層膜鏡構造体
。(2) The X-ray multilayer mirror structure according to claim 1, wherein the target wavelength range is an X-ray wavelength of 1 Å to 200 Å.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2298201A JPH04169898A (en) | 1990-11-02 | 1990-11-02 | Multi-layer mirror structure for x-ray |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2298201A JPH04169898A (en) | 1990-11-02 | 1990-11-02 | Multi-layer mirror structure for x-ray |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04169898A true JPH04169898A (en) | 1992-06-17 |
Family
ID=17856526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2298201A Pending JPH04169898A (en) | 1990-11-02 | 1990-11-02 | Multi-layer mirror structure for x-ray |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04169898A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5406609A (en) * | 1992-04-09 | 1995-04-11 | Rigaku Industrial Corporation | X-ray analysis apparatus |
| EP0774156A1 (en) * | 1994-08-01 | 1997-05-21 | Osmic, Inc. | Optical element of multilayered thin film for x-rays and neutrons |
| WO1997022976A1 (en) * | 1995-12-18 | 1997-06-26 | Osmic, Inc. | Steerable x-ray optical system |
| EP1367605A1 (en) * | 2001-04-27 | 2003-12-03 | Nikon Corporation | Multilayer-film reflective mirrors and optical systems comprising same |
| WO2005036266A1 (en) * | 2003-09-17 | 2005-04-21 | Carl Zeiss Smt Ag | Masks, lithography device and semiconductor component |
| JP2005340459A (en) * | 2004-05-26 | 2005-12-08 | Canon Inc | Projection optical system, aligner, device manufacturing method and device |
| JP2009224792A (en) * | 2009-05-27 | 2009-10-01 | Carl Zeiss Smt Ag | Mask, lithographic apparatus and semiconductor component |
| JP2010226123A (en) * | 2010-05-11 | 2010-10-07 | Carl Zeiss Smt Ag | Mask, lithographic apparatus and semiconductor component |
| JP2016133485A (en) * | 2015-01-22 | 2016-07-25 | キヤノン株式会社 | Scintillator panel, radiation detector, and manufacturing method therefor |
-
1990
- 1990-11-02 JP JP2298201A patent/JPH04169898A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| EP0774156A1 (en) * | 1994-08-01 | 1997-05-21 | Osmic, Inc. | Optical element of multilayered thin film for x-rays and neutrons |
| EP0774156A4 (en) * | 1994-08-01 | 1997-07-02 | ||
| WO1997022976A1 (en) * | 1995-12-18 | 1997-06-26 | Osmic, Inc. | Steerable x-ray optical system |
| EP1367605A1 (en) * | 2001-04-27 | 2003-12-03 | Nikon Corporation | Multilayer-film reflective mirrors and optical systems comprising same |
| US6833223B2 (en) | 2001-04-27 | 2004-12-21 | Nikon Corporation | Multilayer-film reflective mirrors and optical systems comprising same |
| WO2005036266A1 (en) * | 2003-09-17 | 2005-04-21 | Carl Zeiss Smt Ag | Masks, lithography device and semiconductor component |
| US7572556B2 (en) | 2003-09-17 | 2009-08-11 | Carl Zeiss Smt Ag | Masks, lithography device and semiconductor component |
| US7914955B2 (en) | 2003-09-17 | 2011-03-29 | Carl Zeiss Smt Gmbh | Masks, lithography device and semiconductor component |
| US8268518B2 (en) | 2003-09-17 | 2012-09-18 | Carl Zeiss Smt Gmbh | Method and lithography device with a mask reflecting light |
| JP2005340459A (en) * | 2004-05-26 | 2005-12-08 | Canon Inc | Projection optical system, aligner, device manufacturing method and device |
| JP4532991B2 (en) * | 2004-05-26 | 2010-08-25 | キヤノン株式会社 | Projection optical system, exposure apparatus, and device manufacturing method |
| JP2009224792A (en) * | 2009-05-27 | 2009-10-01 | Carl Zeiss Smt Ag | Mask, lithographic apparatus and semiconductor component |
| JP2010226123A (en) * | 2010-05-11 | 2010-10-07 | Carl Zeiss Smt Ag | Mask, lithographic apparatus and semiconductor component |
| JP2016133485A (en) * | 2015-01-22 | 2016-07-25 | キヤノン株式会社 | Scintillator panel, radiation detector, and manufacturing method therefor |
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