JPS63261626A - Manufacture of superconductive thin film - Google Patents
Manufacture of superconductive thin filmInfo
- Publication number
- JPS63261626A JPS63261626A JP62096785A JP9678587A JPS63261626A JP S63261626 A JPS63261626 A JP S63261626A JP 62096785 A JP62096785 A JP 62096785A JP 9678587 A JP9678587 A JP 9678587A JP S63261626 A JPS63261626 A JP S63261626A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- substrate
- thin film
- copper
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000010949 copper Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 239000001301 oxygen Substances 0.000 claims abstract description 26
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052802 copper Inorganic materials 0.000 claims abstract description 15
- 230000007935 neutral effect Effects 0.000 claims abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 150000002739 metals Chemical class 0.000 claims abstract description 8
- 238000010030 laminating Methods 0.000 claims abstract 2
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 9
- 150000004706 metal oxides Chemical class 0.000 abstract description 9
- 230000008021 deposition Effects 0.000 abstract description 2
- 238000010884 ion-beam technique Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- -1 oxygen ion Chemical class 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000005751 Copper oxide Substances 0.000 description 4
- 229910000431 copper oxide Inorganic materials 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052574 oxide ceramic Inorganic materials 0.000 description 3
- 239000011224 oxide ceramic Substances 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 241001197925 Theila Species 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、基板の表面にＩＩａ族−Ｉｎａ族−銅・酸
化物の積層体からなる超電導薄膜を形成する超電導薄膜
の製造方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for producing a superconducting thin film, which comprises forming a superconducting thin film consisting of a laminate of Group IIa-Group Ina-copper oxides on the surface of a substrate. be.
〔従来の技術］
超電導材料は、たとえばジョセフソン素子や５ＱＵＩＤ
センサなどの各種クライオエレクトロニクス材料として
きわめて有望である。[Prior art] Superconducting materials include, for example, Josephson elements and 5QUIDs.
It is extremely promising as a material for various cryoelectronics such as sensors.
かかる超電導材料としては、従来より種々の酸化物セラ
ミックスが焼結により作成されていた。As such superconducting materials, various oxide ceramics have been produced by sintering.
これらの酸化物セラミックスの例を超電導開始温度とと
もに以下に示す。Examples of these oxide ceramics are shown below along with their superconducting initiation temperatures.
（セラミックス） （超電導開始温度）Ｓｃ−
Ｂａ−Ｃｕ酸化物 １７５ＫＹ −Ｂａ−
Ｃｕ酸化物 １２３ＫＬａ−５ｒ−Ｃｕ酸
化物 ５４ＫＬａ−Ｂａ−Ｃｕ酸化物
３０Ｋ〔発明が解決しようとする問題点
〕
ジョセフソン素子や５ＱＵＩＤセンサなどのクライオエ
レクトロニクス材料として、超電導材料を利用する場合
には、その薄膜化が必要であった。(Ceramics) (Superconducting starting temperature) Sc-
Ba-Cu oxide 175KY -Ba-
Cu oxide 123KLa-5r-Cu oxide 54KLa-Ba-Cu oxide
30K [Problem to be Solved by the Invention] When a superconducting material is used as a cryoelectronic material such as a Josephson element or a 5QUID sensor, it is necessary to reduce the thickness of the superconducting material.
しかしながら、従来の超電導材料は、焼結によって酸化
セラミックスを作成していたため、その薄膜化が困難で
あった。However, since conventional superconducting materials are made of oxide ceramics by sintering, it is difficult to make them thin.
したがって、この発明の目的は、超電導薄膜を作成する
ことができる超電導＊Ｈ，の製造方法を提供することで
ある。Therefore, an object of the present invention is to provide a method for manufacturing superconductor*H, which can create a superconducting thin film.
この発明の超電導薄膜の製造方法は、Ｉｌａ族金属およ
び／またはその酸化物と、ＩＩＩａ族金属および／また
はその酸化物と、銅および／またはその酸化物とを、順
次または銅および／またはその酸化物を他の２種の金属
および／またはその酸化物と交互にスパッタして基板上
に積層させ、さらに酸素二ュートラルビームを前記基板
上に照射して１１ａ族−■ａ族−銅・酸化物の積層体か
らなる薄膜を作成することを特徴とするものである。The method for producing a superconducting thin film of the present invention includes sequentially or sequentially combining a group Ila metal and/or its oxide, a group IIIa metal and/or its oxide, and copper and/or its oxide. The material is alternately sputtered with two other metals and/or their oxides to form a layer on a substrate, and then an oxygen neutral beam is irradiated onto the substrate to form a group 11a-group a-copper oxide. This method is characterized by creating a thin film made of a laminate.
この発明によれば、各金属または金属酸化物はスパッタ
リングにより基板上に多層構造（人工格子）となって積
層され、さらに基板に向かって照射される酸素二ュート
ラルビームにより金属は酸化されて金属酸化物となり、
一方、金属酸化物では蒸着時に分離した酸素が酸素二ュ
ートラルビー・ ムによって補充される。また、この
酸素二ュートラルビームの照射によって金属または金属
酸化物は基板内または基板上の堆積層内にたたき込まれ
それらの界面にミキシング屡を形成して基板との間およ
び眉間を強固に結合し、剥離強度を向上させる。According to this invention, each metal or metal oxide is laminated in a multilayer structure (artificial lattice) on a substrate by sputtering, and the metal is further oxidized by an oxygen neutral beam irradiated toward the substrate to form a metal oxide. Then,
On the other hand, in the case of metal oxides, the oxygen separated during vapor deposition is replenished by the oxygen dual beam. In addition, by irradiation with this oxygen neutral beam, the metal or metal oxide is driven into the substrate or into the deposited layer on the substrate, forming a mixing layer at the interface thereof and firmly bonding with the substrate and between the eyebrows. Improves peel strength.
これにより、基板上にＩｌａ族−１［１ａ族−銅・酸化
物の積層体（多層構造）からなる超電導薄膜が形成され
る。この超電導薄膜は結晶構造が均一化されているため
、超電導が起こりやすいものになる。As a result, a superconducting thin film consisting of a laminate (multilayer structure) of group Ila-1 [group 1a-copper oxide] is formed on the substrate. Since this superconducting thin film has a uniform crystal structure, superconductivity easily occurs.
第１図はこの発明を実施するための薄膜形成装置の一例
を示す説明図である。この薄膜形成装置はイオンスパッ
タリングにより薄膜を形成するものであって、真空チャ
ンバ１内にスパッタ粒子が放出される３つの室２，３．
４と、酸素イオン源５と、基板ホルダ６とを備える。FIG. 1 is an explanatory diagram showing an example of a thin film forming apparatus for carrying out the present invention. This thin film forming apparatus forms a thin film by ion sputtering, and has three chambers 2, 3.
4, an oxygen ion source 5, and a substrate holder 6.
前記室２，３．４はそれぞれの内部にスパック用のイオ
ン源７．８．９とターゲット１０，１１゜１２とが収容
される。前記イオン源７，８．９はＡｒなどの不活性ガ
スを用いて引出電極系からイオンビームを引き出すよう
に構成したものである。The chambers 2, 3.4 accommodate therein an ion source 7, 8, 9 and targets 10, 11, 12 for spucking. The ion sources 7, 8.9 are configured to extract ion beams from an extraction electrode system using an inert gas such as Ar.
このイオン源７，８．．９の近傍にはニュートラライザ
１３，１４，１５が配置され、前記Ａｒイオンビームを
中性化し、得られたＡｒニュートラルビームａ、ｂ、ｃ
によりターゲットｔｏ、１１．１２がスパッタされる。These ion sources 7, 8. ．． Neutralizers 13, 14, and 15 are arranged near the point 9 to neutralize the Ar ion beam and generate Ar neutral beams a, b, and c.
The target to, 11.12 is sputtered.
前記ニュートラライザ１３゜１４．１５は、たとえばタ
ングステン、タンタルなどからなる中性化フィラメント
で構成される。The neutralizer 13°14.15 is composed of a neutralized filament made of, for example, tungsten or tantalum.
Ａｒイオンビームを中性化するのは、これによりターゲ
ット１０−１２が絶縁性である場合のチャージアップを
防止し、ターゲット１０〜１２が破損されるのを防止す
るためである。したがって、ターゲットが金属からなる
場合にはイオンビームを中性化する必要はない。The reason why the Ar ion beam is neutralized is to prevent charge-up when the targets 10-12 are insulating and to prevent the targets 10-12 from being damaged. Therefore, if the target is made of metal, there is no need to neutralize the ion beam.
各室内のターゲット１０〜１２はそれぞれＩｌａ族金属
および／またはその酸化物、ＩＩＩａ族金属および／ま
たはその酸化物、銅および／またはその酸化物からなり
、高温（１０００〜１２００’Ｃ程度）で仮焼したもの
である。Targets 10 to 12 in each chamber are made of Ila group metal and/or its oxide, IIIa group metal and/or its oxide, copper and/or its oxide, and are temporarily heated at high temperature (approximately 1000 to 1200'C). It is grilled.
各室２．３．４にはそれぞれシャッタ１７．１８．１９
を設けて各室を開閉可能にする。これらのシャッタ１７
．１８．１９の開き順序により成膜順序が決定され、ま
た開き時間で膜厚を制御することができる。Each room 2.3.4 has a shutter 17.18.19 respectively.
will be installed to allow each room to be opened and closed. These shutters 17
．． The film formation order is determined by the opening order of 18 and 19, and the film thickness can be controlled by the opening time.
酸素イオン源５は酸素イオンビームを真空チャンバ１内
に放出する。この酸素イオン源５の近傍にはニュートラ
ライザ２０が配置され、酸素イオンビームを中性化して
酸素二ュートラルビームｈとする。これは、基板ホルダ
６に保持された基板１１に向かって酸素イオンをそのま
ま照射すると、基板ｌｌ上に形成された薄膜の表面がチ
ャージアップし、後続する酸素イオンをはね返したり絶
縁破壊するためである。前記ニュートラライザ２０は、
たとえばタンタル、タングステンなどからなる中性化フ
ィラメントが使用可能であって、これから発生された電
子により酸素イオンを中性化する。酸素二ュートラルビ
ームｈの照射量は、金属を酸化するのに必要な量よりも
やや多くするのが好ましい。Oxygen ion source 5 emits an oxygen ion beam into vacuum chamber 1 . A neutralizer 20 is placed near the oxygen ion source 5 to neutralize the oxygen ion beam to form an oxygen neutral beam h. This is because if oxygen ions are irradiated directly toward the substrate 11 held in the substrate holder 6, the surface of the thin film formed on the substrate 11 will be charged up, and the following oxygen ions will be repelled and dielectric breakdown will occur. . The neutralizer 20 includes:
For example, a neutralizing filament made of tantalum, tungsten, etc. can be used, and the electrons generated therefrom neutralize the oxygen ions. It is preferable that the irradiation amount of the oxygen neutral beam h be slightly larger than the amount required to oxidize the metal.
前記基板ホルダ６は、内部にヒータ２１が設けられたも
のであって、その表面にサファイア、ジルコニア等から
なる絶縁性の基板２２が取付けられる。The substrate holder 6 is provided with a heater 21 inside thereof, and an insulating substrate 22 made of sapphire, zirconia, etc. is attached to the surface thereof.
スパッタ用のイオン源７〜８から引き出された５００〜
２０００ｅＶ程度のエネルギをもったイオンビームはニ
ュートラライザ１０，１１．１２によってそれぞれ中性
化されてニュートラルビームとなり、各ターゲット１０
〜１２をスパッタする。500~ extracted from the ion sources 7~8 for sputtering
Ion beams with an energy of about 2000 eV are neutralized by neutralizers 10 and 11.12, respectively, to become neutral beams, and each target 10
Sputter ~12.
このスパッタにより各ターゲット１０〜１２よりスパッ
タ粒子が発せられる。このとき、各室２〜３のシャッタ
１７．１８．１９のいずれかを開き他を閉じる操作を所
定時間毎に順次行えば、基板１１の表面に各スパッタ粒
子を所定量ずつ順次積層させることができる（第１図で
は１つの室４のシャッタ１９のみが開いてそこから符号
ｄで示すスパッタ粒子が飛び出している状態を示してい
る）。As a result of this sputtering, sputtered particles are emitted from each of the targets 10 to 12. At this time, by opening one of the shutters 17, 18, and 19 of each chamber 2 to 3 and closing the others at predetermined intervals, it is possible to sequentially stack a predetermined amount of each sputtered particle on the surface of the substrate 11. (FIG. 1 shows a state in which only the shutter 19 of one chamber 4 is open and sputtered particles indicated by the symbol d are flying out from there).
一方、酸素イオンａＳより照射さた酸素イオンビームは
ニュートラライザ１０で中性化されて酸素ニュートラル
ビームｈとなり、基板１１に向かって照射され、順次積
層される薄膜を酸化して酸化物にする。かくして、基板
１１の表面にＩｌａ族金属の酸化物層と、ＩＩＩａ族金
属の酸化物層と、銅の酸化物層とが順次積層され相互に
強固に結合してなる超電導薄膜１３が形成される。この
場合、基板１１として線状のものを使用し、これにＩＩ
ａ族−ＩＩＩａ族−銅・酸化物からなる層状の超電！薄
膜をこの発明にしたがって被覆することもでき、これを
コイルとして使用すれば超電導コイルを得ることができ
る。On the other hand, the oxygen ion beam irradiated by the oxygen ions aS is neutralized by the neutralizer 10 to become an oxygen neutral beam h, which is irradiated toward the substrate 11 to oxidize the successively stacked thin films into oxides. In this way, a superconducting thin film 13 is formed on the surface of the substrate 11, in which the Ila group metal oxide layer, the IIIa group metal oxide layer, and the copper oxide layer are sequentially laminated and strongly bonded to each other. . In this case, a linear substrate 11 is used, and II
Layered superelectric layer consisting of group a-group IIIa-copper oxides! A thin film can also be coated according to the invention and used as a coil to obtain a superconducting coil.
なお、基板２１での反応を掟進させるために、基板１１
は基板ホルダ６に内蔵したヒータ１２によって加熱され
た状態（約７００″Ｃ）でスパッタされるが、基板１１
を加熱せずにまたは２００°Ｃ程度に加熱してスパッタ
し、ついでアニールするようにしてもよい。Note that in order to accelerate the reaction on the substrate 21, the substrate 11
is sputtered while being heated (approximately 700″C) by the heater 12 built into the substrate holder 6.
Sputtering may be performed without heating or by heating to about 200° C., and then annealing may be performed.
また、上述の実施例では３つの室２，３．４より順に各
金属またはその酸化物のスパッタ粒子を放出させるため
、それらの金属またはその酸化物の割合の調整が容易に
なしうるという利点があるが、要すればＩｌａ族金属お
よび／またはその酸化物の室とＩＩＩａ族金属および／
またはその酸化物の室とのそれぞれのシャッタを同時に
開いてそれらの混合酸化物層が銅の酸化物層と交互に積
層されるようにしてもよい。Further, in the above-described embodiment, since the sputtered particles of each metal or its oxide are sequentially emitted from the three chambers 2 and 3.4, there is an advantage that the ratio of these metals or their oxides can be easily adjusted. However, if necessary, a chamber of a group Ila metal and/or its oxide and a chamber of a group Ila metal and/or its oxide are provided.
Alternatively, the respective shutters of the oxide chambers may be opened at the same time so that the mixed oxide layers are alternately stacked with the copper oxide layers.
さらに、室を２つにし、一方にＩｌａ族金属および／ま
たはその酸化物とＩＩＩａ族金属および／またはその酸
化物とのターゲットを収容し、他方に銅および／または
その酸化物のターゲットを収容し、２つの室のシャッタ
を交互に開くようにしてもよい、この場合、一方の室内
に収容されるｌｌａ族金属および／またはその酸化物と
ＩＩＩａ族金属および／またはその酸化物は別個にター
ゲットを構成していてもよく、あるいは合金またはその
酸化物の形態でターゲットを構成していてもよい、この
発明はこれらの態様をも包含するものである。Furthermore, two chambers are provided, one containing a target of group Ila metal and/or its oxide and a group IIIa metal and/or its oxide, and the other containing a target of copper and/or its oxide. , the shutters of the two chambers may be opened alternately, in which case the Illa group metal and/or its oxide and the IIIa group metal and/or its oxide contained in one chamber may be targeted separately. Alternatively, the target may be configured in the form of an alloy or its oxide, and the present invention includes these embodiments.
次に本発明者が行った成膜実験について説明する。Next, a film formation experiment conducted by the present inventor will be described.
実験１； ターゲットとしてＹｇＯｓ＋ Ｂａｄ、 Ｃ
ｕＯを用い、これらを３つのの室内にそれぞれ収容した
。Experiment 1; YgOs+ Bad, C as a target
These were housed in three chambers using uO.
そして、成膜室（真空チャンバ）内のガス圧を１Ｘ １
０−ｓＴｏｒｒとし、また基板としてサファイア基板を
使用した。そして、基板を２００°Ｃに加熱した。さら
に、スパッタ用のイオン源としてＡｒイオンビームを用
い、そのビームエネルギをｌにｅＶ 。Then, the gas pressure in the film forming chamber (vacuum chamber) was adjusted to 1X 1
The temperature was 0-sTorr, and a sapphire substrate was used as the substrate. The substrate was then heated to 200°C. Furthermore, an Ar ion beam was used as an ion source for sputtering, and the beam energy was set to l eV.
１■Ａとした。It was set as 1■A.
また、酸素イオン源として、酸素イオンビームを用い、
そのビームエネルギをｔｏｏｖ、０．５ｍＡとし、これ
を中性化して基板に照射した。In addition, an oxygen ion beam is used as the oxygen ion source,
The beam energy was set to 0.5 mA, and the beam was neutralized and irradiated onto the substrate.
成膜は次のようにして行った。すなわち、各室のシャッ
タを、Ｃｕの室間→Ｃｕの室間、Ｈａの室間→８ａの室
間、Ｃｕの室間→Ｃｕの室間、Ｙの室間→Ｙの室間、Ｃ
ｕの室間→−の順にそれぞれの室を開く操作を操り返し
て多ＮＷＡとした。このとき、各シャッタの開き時間は
各層の厚さが５人となるように制御した。Film formation was performed as follows. That is, the shutters of each room are moved from Cu room to Cu room, Ha room to 8a room, Cu room to Cu room, Y room to Y room, C
A multi-NWA was created by repeating the operation of opening each chamber in the order of u's chambers → -. At this time, the opening time of each shutter was controlled so that the thickness of each layer was 5 people.
成膜後、電気炉中にて７００°Ｃでアニールした。After the film was formed, it was annealed at 700°C in an electric furnace.
これによってサファイア基板の表面に厚さ１０００人の
Ｙ−Ｂａ−Ｃｕ酸化物の積層体からなる超電導薄膜が得
られた。この超電導薄膜の両端に金電極をスパック成膜
により形成し、液体窒素中でこの超電導薄膜の電気抵抗
を測定したところ、電極間の電気抵抗は０であった。As a result, a superconducting thin film consisting of a laminate of Y--Ba--Cu oxides having a thickness of 1000 layers was obtained on the surface of the sapphire substrate. Gold electrodes were formed on both ends of this superconducting thin film by spuck deposition, and the electrical resistance of this superconducting thin film was measured in liquid nitrogen, and the electrical resistance between the electrodes was 0.
また、前記Ｙ＋ Ｂａ、 Ｃｕのスパッタ順序を逆にし
たり、あるいはこれらの金属に代えてこれらの酸化物を
用いて前記と同様にしてスパッタ成膜した場合も同様の
結果が得られた。Further, similar results were obtained when the sputtering order of Y+ Ba and Cu was reversed, or when these oxides were used in place of these metals and the sputtering film was formed in the same manner as described above.
実験２： シャッタの開閉を、Ｃｕの蒸発室閉→Ｃｕの
蒸発室閉、ＹおよびＢａの室間→ＹおよびＢａの室間、
Ｃｕの蒸発室閉→Ｃｕの蒸発室閉、ＹおよびＢａの室間
→・・・の順序行い、基板上にスパッタしたほかは前述
の実験ｌと同様にして超電導薄膜を得た。Experiment 2: The shutter was opened and closed as follows: Cu evaporation chamber closed → Cu evaporation chamber closed, between Y and Ba chambers → between Y and Ba chambers,
A superconducting thin film was obtained in the same manner as in Experiment 1 above, except that the sequence of closing the Cu evaporation chamber, closing the Cu evaporation chamber, interposing the Y and Ba chambers, and so on was performed, and sputtering was performed on the substrate.
このものも実験１と同様に電極間の抵抗はＯであった。In this case as well, the resistance between the electrodes was O as in Experiment 1.
なお、実験１および２において、サファイア基板を７０
０°Ｃ程度に加熱して、スパッタし、アニールをしない
場合も同様の結果が得られた。In addition, in Experiments 1 and 2, the sapphire substrate was
Similar results were obtained when the film was heated to about 0°C and sputtered without annealing.
この発明によれば、ＩＩａ族−ＩＩＩａ族−銅・酸化物
の積層体からなる超電導薄膜の生成が可能になるという
効果がある。 ”According to this invention, it is possible to produce a superconducting thin film consisting of a laminate of Group IIa-Group IIIa-copper/oxide. ”
【図面の簡単な説明】
第１図はこの発明の実施に使用する薄膜形成装置の一例
を示す概略図である。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram showing an example of a thin film forming apparatus used in carrying out the present invention.
Claims (1)
および／またはその酸化物と、銅および／またはその酸
化物とを、順次または銅および／またはその酸化物を他
の２種の金属および／またはその酸化物と交互にスパッ
タして基板上に積層させ、さらに酸素二ュートラルビー
ムを前記基板上に照射してIIａ族−IIIａ族−銅・酸化
物の積層体からなる薄膜を作成することを特徴とする超
電導薄膜の製造方法。Group IIa metal and/or its oxide, Group IIIa metal and/or its oxide, and copper and/or its oxide, or copper and/or its oxide with other two metals and/or Alternatively, a thin film consisting of a laminate of Group IIa-Group IIIa-copper/oxide is created by sputtering alternately with the oxide thereof and laminating it on a substrate, and then irradiating the substrate with an oxygen neutral beam. A method for manufacturing a superconducting thin film.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62096785A JP2521950B2 (en) | 1987-04-20 | 1987-04-20 | Manufacturing method of superconducting thin film |
| EP88106211A EP0288001B1 (en) | 1987-04-20 | 1988-04-19 | Process for producing superconducting thin film and device therefor |
| DE8888106211T DE3877405T2 (en) | 1987-04-20 | 1988-04-19 | METHOD FOR PRODUCING A SUPRAL-CONDUCTING THICK LAYER AND ARRANGEMENT FOR ITS IMPLEMENTATION. |
| US07/183,099 US4861750A (en) | 1987-04-20 | 1988-04-19 | Process for producing superconducting thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62096785A JP2521950B2 (en) | 1987-04-20 | 1987-04-20 | Manufacturing method of superconducting thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63261626A true JPS63261626A (en) | 1988-10-28 |
| JP2521950B2 JP2521950B2 (en) | 1996-08-07 |
Family
ID=14174288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62096785A Expired - Fee Related JP2521950B2 (en) | 1987-04-20 | 1987-04-20 | Manufacturing method of superconducting thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2521950B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63298920A (en) * | 1987-05-28 | 1988-12-06 | Matsushita Electric Ind Co Ltd | Manufacture of membranous superconductor |
| JPS6451680A (en) * | 1987-08-22 | 1989-02-27 | Sumitomo Electric Industries | Oxide ceramics laminated layer structure and its manufacture |
| JPS6451682A (en) * | 1987-08-22 | 1989-02-27 | Sumitomo Electric Industries | Formation of superconducting thin film |
| JPS6453479A (en) * | 1987-08-24 | 1989-03-01 | Sumitomo Electric Industries | Formation of superconducting thin film |
| JPH0375300A (en) * | 1989-08-11 | 1991-03-29 | Hitachi Ltd | Oxide superlattice material, its production and apparatus therefor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62208678A (en) * | 1986-03-10 | 1987-09-12 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of superconducting thin film |
| JPS63241823A (en) * | 1987-03-27 | 1988-10-07 | Nissin Electric Co Ltd | Manufacture of superconducting thin film |
-
1987
- 1987-04-20 JP JP62096785A patent/JP2521950B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62208678A (en) * | 1986-03-10 | 1987-09-12 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of superconducting thin film |
| JPS63241823A (en) * | 1987-03-27 | 1988-10-07 | Nissin Electric Co Ltd | Manufacture of superconducting thin film |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63298920A (en) * | 1987-05-28 | 1988-12-06 | Matsushita Electric Ind Co Ltd | Manufacture of membranous superconductor |
| JPH0818912B2 (en) * | 1987-05-28 | 1996-02-28 | 松下電器産業株式会社 | Method of manufacturing thin film superconductor |
| JPS6451680A (en) * | 1987-08-22 | 1989-02-27 | Sumitomo Electric Industries | Oxide ceramics laminated layer structure and its manufacture |
| JPS6451682A (en) * | 1987-08-22 | 1989-02-27 | Sumitomo Electric Industries | Formation of superconducting thin film |
| JPS6453479A (en) * | 1987-08-24 | 1989-03-01 | Sumitomo Electric Industries | Formation of superconducting thin film |
| JPH0375300A (en) * | 1989-08-11 | 1991-03-29 | Hitachi Ltd | Oxide superlattice material, its production and apparatus therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2521950B2 (en) | 1996-08-07 |
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