JPH04346651A - Metallizing method - Google Patents
Metallizing methodInfo
- Publication number
- JPH04346651A JPH04346651A JP11988191A JP11988191A JPH04346651A JP H04346651 A JPH04346651 A JP H04346651A JP 11988191 A JP11988191 A JP 11988191A JP 11988191 A JP11988191 A JP 11988191A JP H04346651 A JPH04346651 A JP H04346651A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- layer
- substrate
- adhesion
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000011368 organic material Substances 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 26
- 239000004033 plastic Substances 0.000 abstract description 10
- 229920003023 plastic Polymers 0.000 abstract description 10
- 239000002344 surface layer Substances 0.000 abstract description 6
- 238000010884 ion-beam technique Methods 0.000 abstract description 4
- 150000002500 ions Chemical class 0.000 description 14
- 239000010408 film Substances 0.000 description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000002923 metal particle Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- -1 nitrogen ion Chemical class 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、材料表面の改質に係り
、特に、有機材料の表面をメタライジングする方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the modification of the surface of materials, and more particularly to a method of metallizing the surface of organic materials.
【０００２】0002
【従来の技術】従来、アルミナのようなセラミックスの
メタライジング法として、１０００℃を越える加熱プロ
セスが実用化されている。この高温プロセスでは、室温
まで冷却する間に金属とセラミックスとの間に熱膨張率
の差によるストレスが発生し、両者の密着強度に限界が
あった。それに対して、最近イオン照射を利用した低温
プロセスによるメタライジング法が研究されている。例
えば、第５回イオン注入表層処理シンポジウム論文集（
１９８９年１１月）の講演番号Ｃ−１１にはダイナミッ
クミキシング法によるＡＬＮのＣｕメタライジング法が
、同じくＣ−１２にはＩＶＤによるセラミックスのメタ
ライジング法が記載されている。2. Description of the Related Art Hitherto, a heating process exceeding 1000° C. has been put into practical use as a metallizing method for ceramics such as alumina. In this high-temperature process, stress occurs between the metal and ceramic due to the difference in coefficient of thermal expansion during cooling to room temperature, which limits the adhesion strength between the two. In contrast, metallizing methods using low-temperature processes using ion irradiation have recently been studied. For example, Proceedings of the 5th Ion Implantation Surface Treatment Symposium (
Lecture number C-11 (November 1989) describes a Cu metallizing method for ALN using a dynamic mixing method, and C-12 describes a method for metallizing ceramics using IVD.
【０００３】0003
【発明が解決しようとする課題】この論文集によるメタ
ライジング法はセラミックスを対象にしており、プラス
チックスなどの有機材料を対象にしたものではない。近
年、デバイスの基板として、ガラスやセラミックスのよ
うな重くて破壊しやすい無機材料ではなく、軽くて可撓
性のあるシート状のプラスチックスのような有機材料が
有望視されているが、有機材料のメタライジング法はま
だ提案されていない。有機材料にメタライジングする方
法あるいは金属薄膜を形成する方法として、これまでの
技術の延長線上に、いわゆる真空蒸着法がある。この真
空蒸着による膜は、単に基材の表面に形成されるだけで
、基材との密着性が悪く、剥離しやすいという欠点があ
る。本発明の目的は、基材と金属の層との境界が不明瞭
な混合層を介在させて、密着性（耐剥離性）がすぐれる
表面層をもつプラスチックスなどの有機材料およびその
処理法を提供することにある。[Problems to be Solved by the Invention] The metallizing method described in this collection of papers is intended for ceramics, not for organic materials such as plastics. In recent years, organic materials such as light and flexible sheet plastics have been seen as promising as device substrates, rather than heavy and easily broken inorganic materials such as glass and ceramics. No metallizing method has been proposed yet. As a method of metallizing organic materials or forming a thin metal film, there is a so-called vacuum evaporation method that is an extension of conventional technology. This vacuum-deposited film is simply formed on the surface of the base material, and has the disadvantage that it has poor adhesion to the base material and is easily peeled off. The object of the present invention is to provide an organic material such as plastics that has a surface layer with excellent adhesion (peeling resistance) by interposing a mixed layer with an unclear boundary between the base material and the metal layer, and a method for treating the same. Our goal is to provide the following.
【０００４】0004
【課題を解決するための手段】上記目的を達成するため
に、本発明は金属をプラスチックスなどの有機材料の表
面に蒸着させながら、加速したイオンを有機材料の表面
に照射または注入して、金属と有機材料との混合層を形
成し、さらにその上に金属の層を形成した。すなわち、
蒸着金属粒子は、有機材料の基材へ付着する前に加速さ
れたイオンと衝突して運動エネルギを得て基材に注入さ
れるか、または基材表面に付着した後にイオンに押し込
まれるようにして表面層を形成する。従って、金属が基
材表面に注入された状態になるために、基材と金属の層
は原子的結合状態となり、基材との密着性は非常に良好
であり、従来の課題を解決することができる。[Means for Solving the Problems] In order to achieve the above object, the present invention deposits metal onto the surface of an organic material such as plastics while irradiating or injecting accelerated ions onto the surface of the organic material. A mixed layer of metal and organic material was formed, and a metal layer was further formed on top of the mixed layer. That is,
The deposited metal particles are either collided with accelerated ions to gain kinetic energy and implanted into the substrate before being attached to the organic material substrate, or they are forced into the ions after being attached to the substrate surface. to form a surface layer. Therefore, since the metal is injected into the surface of the base material, the base material and the metal layer are in an atomic bond state, and the adhesion with the base material is very good, which solves the conventional problems. Can be done.
【０００５】ここで、金属を蒸着しながらイオンを照射
するということは、これらを同時に併用または交互に行
うことを指している。[0005] Here, irradiation with ions while depositing a metal means to perform both simultaneously or alternately.
【０００６】[0006]
【作用】本発明の有機材料にメタライジングあるいは金
属薄膜を形成した部材は、その表面に金属の層が形成さ
れており、金属の層は基材近傍で濃度が減少して基材と
の混合物層となり、さらに内部は基材になっている。す
なわち、金属粒子は、蒸発して有機材料の基材表面へ付
着する前に加速されたイオンと衝突して運動エネルギを
得て基材に注入されるか、または基材表面に付着した後
にイオンに押し込まれるようにして表面層を形成する。
従って、金属が基材表面に注入された状態の混合層を介
して金属の層を形成するために、基材との密着力が大き
くなり、非常に耐剥離性の優れた状態になる。[Function] The member of the present invention in which metallization or a metal thin film is formed on the organic material has a metal layer formed on its surface, and the concentration of the metal layer decreases near the base material and becomes a mixture with the base material. It becomes a layer, and the inside is a base material. That is, the metal particles either collide with accelerated ions and gain kinetic energy and are injected into the substrate before evaporating and adhering to the surface of the organic material, or the metal particles are injected into the substrate after adhering to the surface of the substrate. A surface layer is formed by being pushed into the surface. Therefore, since the metal layer is formed via the mixed layer in which the metal is injected onto the surface of the base material, the adhesion to the base material is increased, resulting in a state of extremely excellent peeling resistance.
【０００７】[0007]
【実施例】以下、本発明を実施例により具体的に述べる
。[Examples] The present invention will be specifically described below with reference to Examples.
【０００８】図１は本発明の一実施例における有機材料
にメタライジングあるいは金属薄膜を形成する方法を示
す説明図である。FIG. 1 is an explanatory diagram showing a method of metallizing or forming a metal thin film on an organic material in one embodiment of the present invention.
【０００９】図１に示すように、真空ポンプ１により真
空排気するチャンバ２内で水冷回転式の基板ホルダ３に
対して互いに４５゜の角度からイオンビーム４を照射す
るイオン源５と金属蒸気６を蒸発する蒸発源７を設け、
基板８の表面に金属を蒸着させながら、イオンビームを
照射して、基板８の表面に金属の層を形成する。基板は
直径２５ｍｍ厚さ１ｍｍのポリカーボネート板であり、
処理条件は銀の蒸着速度５Å／秒、加速電圧２０ＫＶ、
窒素イオン電流１５〜３０ｍＡ、膜厚１μである。これ
らの条件で作製した試料について、オージェ電子分光分
析装置で表面から基材側へ分析し、ついで、表面に直径
０．５ｍｍ のスタッドをはんだ付けして引っ張って膜
の密着力を測定した。これらの比較には、この処理条件
でイオンを照射しないもの、すなわち、銀を蒸着しただ
けのものを用いた。As shown in FIG. 1, an ion source 5 and a metal vapor 6 irradiate a water-cooled rotary substrate holder 3 with an ion beam 4 at an angle of 45° to each other in a chamber 2 that is evacuated by a vacuum pump 1. An evaporation source 7 is provided to evaporate the
While depositing metal on the surface of the substrate 8, an ion beam is irradiated to form a metal layer on the surface of the substrate 8. The substrate is a polycarbonate plate with a diameter of 25 mm and a thickness of 1 mm.
The processing conditions were a silver deposition rate of 5 Å/sec, an acceleration voltage of 20 KV,
The nitrogen ion current was 15 to 30 mA, and the film thickness was 1 μm. The samples prepared under these conditions were analyzed from the surface to the substrate side using an Auger electron spectrometer, and then a stud with a diameter of 0.5 mm was soldered to the surface and the adhesion of the film was measured by pulling. For these comparisons, we used samples that were not irradiated with ions under these processing conditions, that is, samples that were only vapor-deposited with silver.
【００１０】オージェ電子分光分析装置により表面から
基材側への断面を分析した結果、図２に示すように、表
面には銀の層が形成されており、表面から基材までの間
で銀が徐々に減少して（炭素が徐々に増加：これは図示
せず）いる部分が比較的長く形成されている。これは表
面層と基材との間に銀と基材の主成分である炭素との混
合層が形成されていることを示している。これに対して
、比較材のイオンを照射せずに蒸着しただけでは、急激
に銀の層が減少して、混合層の形成がなく、ほとんど機
械的にしか付着していないことがわかる。[0010] As a result of analyzing the cross section from the surface to the substrate side using an Auger electron spectrometer, it was found that a silver layer was formed on the surface, and the silver layer was formed between the surface and the substrate, as shown in Figure 2. A relatively long portion is formed in which carbon gradually decreases (carbon gradually increases; this is not shown). This indicates that a mixed layer of silver and carbon, which is the main component of the base material, is formed between the surface layer and the base material. On the other hand, when the comparative material was simply deposited without ion irradiation, the silver layer rapidly decreased, no mixed layer was formed, and it was found that the silver layer was almost only mechanically deposited.
【００１１】また、膜の密着力を測定した結果、図３に
示すように、イオンを照射せずに蒸着しただけでは殆ん
ど密着力はないが、イオンを照射することによって密着
力を著しく高められることがわかる。Furthermore, as a result of measuring the adhesion of the film, as shown in FIG. 3, there is almost no adhesion when the film is deposited without ion irradiation, but the adhesion is significantly increased by ion irradiation. I know it can be improved.
【００１２】本発明は上述のもののみに制限されるもの
ではなく、例えば、絶縁材としてのポリイミドと配線材
としての銅やアルミニウムとの接着性を改善して薄膜の
多層基板を開発すること、プラスチックスの装飾品や建
築材料に耐剥離性や耐侯性をもたせて長寿命化を図るこ
と、等々への適用も可能である。また、蒸着金属として
銀の実施例を示したが、銅，金，チタン，アルミニウム
，鉄，コバルト，ニッケル，シリコン，クロム，マンガ
ン，モリブデン，タングステンなどについても同様であ
る。さらに、イオン種として窒素の例を示したが、水素
，ヘリウム，アルゴン，キセノンなどの気体やこれらの
金属についても同じである。The present invention is not limited to the above, but includes, for example, developing a thin-film multilayer substrate by improving the adhesion between polyimide as an insulating material and copper or aluminum as a wiring material; It can also be applied to plastic ornaments and building materials to make them peel-resistant and weather-resistant to extend their lifespan. Further, although silver has been shown as an example as the vapor-deposited metal, the same applies to copper, gold, titanium, aluminum, iron, cobalt, nickel, silicon, chromium, manganese, molybdenum, tungsten, and the like. Furthermore, although nitrogen has been shown as an example of the ionic species, the same applies to gases such as hydrogen, helium, argon, and xenon, and to these metals.
【００１３】[0013]
【発明の効果】本発明によれば、基材と金属の層との境
界が不明瞭な混合層を介在させて密着性（耐剥離性）が
すぐれる表面層をもつプラスチックスなどの有機材料、
密着性がすぐれる金属の導電層とプラスチックスなどの
絶縁をもつ薄膜多層材料、およびその処理法が実現でき
る。Effects of the Invention According to the present invention, organic materials such as plastics have a surface layer with excellent adhesion (peeling resistance) by interposing a mixed layer with an unclear boundary between the base material and the metal layer. ,
A thin film multilayer material with a conductive layer made of metal and an insulating layer made of plastic etc. with excellent adhesion, and its processing method can be realized.
【図１】本発明の一実施例のダイナミックミキシングに
よるメタライジン法を示す説明図。FIG. 1 is an explanatory diagram showing a metallizing method using dynamic mixing according to an embodiment of the present invention.
【図２】本発明の一実施例のメタライジン法による膜、
およびイオンを照射せずに蒸着しただけの膜について、
オージェ電子分光分析装置により表面から基材側への断
面を分析した結果を示す特性図。FIG. 2: A film produced by the metallizing method according to an embodiment of the present invention.
and for films simply deposited without ion irradiation.
FIG. 3 is a characteristic diagram showing the results of analyzing a cross section from the surface to the base material side using an Auger electron spectrometer.
【図３】本発明の一実施例のメタライジン法による膜の
密着力、およびイオンを照射せずに蒸着しただけの膜の
密着力を測定した結果を示す特性図。FIG. 3 is a characteristic diagram showing the results of measuring the adhesion of a film formed by the metallizing method of one embodiment of the present invention and the adhesion of a film simply deposited without ion irradiation.
１…真空ポンプ、２…真空チャンバ、３…基板ホルダ、
４…イオンビーム、５…イオン源、６…金属蒸気、７…
蒸発源。1... Vacuum pump, 2... Vacuum chamber, 3... Substrate holder,
4...Ion beam, 5...Ion source, 6...Metal vapor, 7...
Evaporation source.
Claims (2)
粒子を同時に照射することにより、前記基材表面に前記
金属が形成されており、前記金属が前記基材表面から内
部にわたって濃度を減少させることを特徴とするメタラ
イジング法。1. The metal is formed on the surface of the substrate by simultaneously irradiating accelerated particles while vapor depositing the metal on the surface of the substrate, and the metal is concentrated from the surface to the inside of the substrate. A metallizing method characterized by reducing
であるメタライジング法。2. The metallizing method according to claim 1, wherein the base material is an organic material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11988191A JPH04346651A (en) | 1991-05-24 | 1991-05-24 | Metallizing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11988191A JPH04346651A (en) | 1991-05-24 | 1991-05-24 | Metallizing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04346651A true JPH04346651A (en) | 1992-12-02 |
Family
ID=14772552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11988191A Pending JPH04346651A (en) | 1991-05-24 | 1991-05-24 | Metallizing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04346651A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007526147A (en) * | 2004-03-02 | 2007-09-13 | イスト・イオーネンシュトラールテヒノロギー・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング | Joined composite and method for producing the same |
| JP2008246894A (en) * | 2007-03-30 | 2008-10-16 | Lintec Corp | Gas barrier film and its manufacturing method |
| KR101349859B1 (en) * | 2012-04-19 | 2014-01-16 | 주식회사 신기인터모빌 | A Plastic Component And Surface Treatment Method of the same |
| JP2016159606A (en) * | 2015-03-05 | 2016-09-05 | 住友電気工業株式会社 | Laminated structure |
-
1991
- 1991-05-24 JP JP11988191A patent/JPH04346651A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007526147A (en) * | 2004-03-02 | 2007-09-13 | イスト・イオーネンシュトラールテヒノロギー・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング | Joined composite and method for producing the same |
| JP2012020583A (en) * | 2004-03-02 | 2012-02-02 | Ist Ionenstrahltechnologie Gmbh | Bond complex body and method of producing the same |
| JP2008246894A (en) * | 2007-03-30 | 2008-10-16 | Lintec Corp | Gas barrier film and its manufacturing method |
| KR101349859B1 (en) * | 2012-04-19 | 2014-01-16 | 주식회사 신기인터모빌 | A Plastic Component And Surface Treatment Method of the same |
| JP2016159606A (en) * | 2015-03-05 | 2016-09-05 | 住友電気工業株式会社 | Laminated structure |
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