JPS63235471A - Target for sputtering device - Google Patents
Target for sputtering deviceInfo
- Publication number
- JPS63235471A JPS63235471A JP6975287A JP6975287A JPS63235471A JP S63235471 A JPS63235471 A JP S63235471A JP 6975287 A JP6975287 A JP 6975287A JP 6975287 A JP6975287 A JP 6975287A JP S63235471 A JPS63235471 A JP S63235471A
- Authority
- JP
- Japan
- Prior art keywords
- target
- target material
- shape
- sputtering
- backing plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 16
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 11
- 230000003628 erosive effect Effects 0.000 claims abstract description 6
- 239000013077 target material Substances 0.000 abstract description 31
- 230000000694 effects Effects 0.000 abstract description 7
- 238000001816 cooling Methods 0.000 abstract description 4
- 230000002093 peripheral effect Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 239000002699 waste material Substances 0.000 abstract description 2
- 230000001965 increasing effect Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005242 forging Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はマグネトロンスパッタ装置のターゲット、特に
ターゲツト材とバッキングプレートとの形状に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a target for a magnetron sputtering apparatus, and in particular to the shape of a target material and a backing plate.
［従来の技術］
従来のマグネトロンスパッタ装置のターゲットとしては
第４図（ａ）、 （ｂ）に示すように平板形のターゲツ
ト材２１にバッキングプレート２２を接着したもの、ま
たは第５図（ａ）、 （ｂ）に示すようにターゲツト材
２３が三角形の断面をもつリング形状のものがある。[Prior Art] Targets for conventional magnetron sputtering equipment include a flat target material 21 with a backing plate 22 adhered to it as shown in FIGS. 4(a) and 4(b), or a backing plate 22 bonded to a flat target material 21 as shown in FIG. 5(a). As shown in (b), there is a ring-shaped target material 23 with a triangular cross section.
［発明が解決しようとする問題点］
半導体装置の製造に一般に用いられているマグネトロン
スパッタ装置のターゲットは、電極形状及びターゲット
表面の磁界分布により、ターゲツト材がスパッタされる
領域は限られる。このため、使用後のターゲツト材３１
は第６図のようにスパッタされない領域でターゲツト材
３１が残ってしまう。[Problems to be Solved by the Invention] In the target of a magnetron sputtering apparatus commonly used in the manufacture of semiconductor devices, the area over which the target material is sputtered is limited due to the shape of the electrode and the magnetic field distribution on the target surface. For this reason, the target material 31 after use
As shown in FIG. 6, the target material 31 remains in the area that is not sputtered.
高価格な材料を使用する場合、これは大変な浪費といえ
る。This is a huge waste when using expensive materials.
本発明の目的は以上述べた欠点を除去した新規なターゲ
ットを提供することにある。The object of the present invention is to provide a new target that eliminates the above-mentioned drawbacks.
［発明の従来技術に対する相違点］
上述した従来のマグネトロンスパッタ装置用ターゲット
に対し、本発明のターゲットはスパッタによるエロージ
ョン領域のみにターゲツト材が存在するという独創的内
容を有する。[Differences between the Invention and the Prior Art] Compared to the conventional target for magnetron sputtering equipment described above, the target of the present invention has an original feature in that the target material exists only in the erosion region due to sputtering.
［問題点を解決するための手段］
本発明はマグネトロンスパッタ装置に使用するバッキン
グプレート付ターゲットにおいて、ターゲット本体のス
パッタ表面を平坦に形成し、かつ、その裏面をスパッタ
後のエロージョン形状と相似形に形成し、前記裏面形状
に沿ってバッキングプレートを密着接合したことを特徴
とするスパッタ装置用ターゲットである。[Means for Solving the Problems] The present invention provides a target with a backing plate used in a magnetron sputtering device, in which the sputtering surface of the target body is formed flat, and the back surface is formed into a shape similar to the erosion shape after sputtering. A target for a sputtering apparatus is characterized in that a backing plate is closely bonded along the shape of the back surface.
［原 理］
ところで、一般のマグネトロンスパッタ装置は磁界と電
極の関係でターゲツト材がスパッタされる領域は限られ
る。使用後は第６図に示すように、ターゲツト材３１が
中心部及び周辺部で残ってしまう。そこで、本発明は第
１図（ａ）、 （ｂ）に示すようにターゲツト材１のス
パッタ表面１ａを平坦に形成し、ターゲツト材１の裏面
１ｂの中心部及び周辺部を薄くその他の部分が厚くなる
ように形成し、バッキングプレート２の形状をターゲツ
ト材１と逆に中心部及び周辺部を厚く、他の部分が薄く
なるように形成し、ターゲツト材１の裏面形状に沿って
バッキングプレート２を密着接合したちのである。[Principle] By the way, in a general magnetron sputtering device, the area where the target material can be sputtered is limited due to the relationship between the magnetic field and the electrodes. After use, the target material 31 remains in the center and the periphery, as shown in FIG. Therefore, in the present invention, as shown in FIGS. 1(a) and 1(b), the sputtered surface 1a of the target material 1 is formed flat, the center and peripheral parts of the back surface 1b of the target material 1 are thinned, and the other parts are thinned. The shape of the backing plate 2 is opposite to that of the target material 1 so that the center and peripheral parts are thick and the other parts are thin. These are closely bonded together.
［実施例］ 次に本発明の実施例について図面を参照して説明する。[Example] Next, embodiments of the present invention will be described with reference to the drawings.
（実施例１）
第２図は本発明の第１の実施例を示す断面図でおる。タ
ーゲツト材４１（例えばＷＳｉ ）を鍛造する際、スパ
ッタしない裏面４１ｂの中心部及び周辺部を薄く、他の
部分を厚くなる型を用いて鍛造を行う。その後のスパッ
タ面４１ａを平面に仕上げる。(Example 1) FIG. 2 is a sectional view showing a first example of the present invention. When forging the target material 41 (for example, WSi), the forging is performed using a die that makes the center and peripheral portions of the back surface 41b, which are not sputtered, thinner and the other portions thicker. The subsequent sputtering surface 41a is finished into a flat surface.
バッキングプレート４２（例えば、銅）はターゲツト材
４１と逆に中心部及び周辺部を厚く他の部分を薄クシ、
かつ、ターゲツト材４１の裏面形状に合わせて全面が密
着するような形状に加工しターゲツト材４１とバッキン
グプレート４２を接着する。The backing plate 42 (copper, for example) is thicker in the center and periphery than the target material 41, and thinner in other parts.
Further, the target material 41 and the backing plate 42 are bonded together by processing the target material 41 into a shape such that the entire surface is in close contact with the shape of the back surface of the target material 41.
以上の手順で製作したターゲレトは第２図に示す形状に
なり、このターゲットを用いることにより従来バッキン
グプレートの厚さで制約を受けたターゲツト材の厚みを
ターゲット外形寸法を変えることなく、増すことができ
るので、ターゲットの寿命は伸び、かつターゲツト材と
バッキングプレートの接着面積を増すことができるので
、スパッタによるターゲツト材の温度上昇をおさえる冷
却効果も増すことができる。The target plate manufactured using the above procedure has the shape shown in Figure 2. By using this target, the thickness of the target material, which was conventionally limited by the thickness of the backing plate, can be increased without changing the outer dimensions of the target. As a result, the life of the target can be extended, and since the bonding area between the target material and the backing plate can be increased, the cooling effect for suppressing the temperature rise of the target material due to sputtering can also be increased.
（実施例２〉
第３図は本発明の実施例２のマグネトロンスパッタ装置
のターゲットの断面図である。断面が三角形のリング状
ターゲツト材５１の外周及び底を覆った形状のバッキン
グプレート５２にリング状ターゲツト材５１を接着しタ
ーゲットを構成する。(Embodiment 2) Fig. 3 is a sectional view of a target of a magnetron sputtering apparatus according to Embodiment 2 of the present invention. A target material 51 is adhered to form a target.
この実施例ではバッキングプレート５２に熱伝導率のよ
い銅を用いることによりターゲット冷却効果を高める効
果もある。In this embodiment, the use of copper with good thermal conductivity for the backing plate 52 also has the effect of enhancing the target cooling effect.
［発明の効果］
以上説明したように本発明はマグネトロンスパッタ装置
のバッキングプレート付ターゲットにおいて、スパッタ
材の表面が平坦に形成され、かつその裏面がスパッタ後
のエロージョン形状と相似形に形成され、その裏面形状
に沿って密着する形状でバッキングプレートを形成する
ことにより、ターゲツト材をむだなく使用できかつ、バ
ッキングプレートとターゲツト材の接着面積が増大する
ため、スパッタによるターゲツト材の過熱に対する冷却
効果を上げることができ、より一層の効率のよいスパッ
タリングができる効果がある。[Effects of the Invention] As explained above, the present invention provides a target with a backing plate for a magnetron sputtering device, in which the surface of the sputtering material is formed flat, and the back surface is formed in a similar shape to the erosion shape after sputtering. By forming the backing plate in a shape that closely follows the shape of the back surface, the target material can be used without wastage, and the bonding area between the backing plate and the target material increases, increasing the cooling effect against overheating of the target material due to sputtering. This has the effect of enabling even more efficient sputtering.
第１図（ａ）はマグネトロンスパッタ装置ターゲットの
平面図、（ｂ）は同断面図、第２図は本発明の第１の実
施例を示す断面図、第３図は本発明の第２の実施例を示
す断面図、第４図（ａ）は従来例を示す平面図、（ｂ）
は同断面図、第５図（ａ）は従来例を示す平面図、（ｂ
）は同断面図、第６図は従来のターゲットの使用後を示
す断面図である。
１・・・ターゲツト材
２・・・バッキングプレートFIG. 1(a) is a plan view of a magnetron sputtering device target, FIG. 1(b) is a cross-sectional view thereof, FIG. 2 is a cross-sectional view showing a first embodiment of the present invention, and FIG. 4(a) is a sectional view showing the embodiment, FIG. 4(b) is a plan view showing the conventional example.
5(a) is a plan view showing the conventional example, and FIG. 5(b) is a sectional view of the same.
) is the same sectional view, and FIG. 6 is a sectional view showing the conventional target after use. 1...Target material 2...Backing plate
Claims (1)
プレート付ターゲットにおいて、ターゲット本体のスパ
ッタ表面を平坦に形成し、かつ、その裏面をスパッタ後
のエロージヨン形状と相似形に形成し、前記裏面形状に
沿つてバッキングプレートを密着接合したことを特徴と
するスパッタ装置用ターゲット。(1) In a target with a backing plate used in a magnetron sputtering device, the sputtering surface of the target body is formed flat, the back surface is formed in a shape similar to the erosion shape after sputtering, and the backing is applied along the shape of the back surface. A target for sputtering equipment characterized by closely bonding plates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6975287A JPS63235471A (en) | 1987-03-24 | 1987-03-24 | Target for sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6975287A JPS63235471A (en) | 1987-03-24 | 1987-03-24 | Target for sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63235471A true JPS63235471A (en) | 1988-09-30 |
Family
ID=13411837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6975287A Pending JPS63235471A (en) | 1987-03-24 | 1987-03-24 | Target for sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63235471A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4904362A (en) * | 1987-07-24 | 1990-02-27 | Miba Gleitlager Aktiengesellschaft | Bar-shaped magnetron or sputter cathode arrangement |
| US5336386A (en) * | 1991-01-28 | 1994-08-09 | Materials Research Corporation | Target for cathode sputtering |
| JP2011517329A (en) * | 2007-06-18 | 2011-06-02 | アプライド マテリアルズ インコーポレイテッド | Sputtering target with extended life and increased sputtering uniformity |
| JP2011132587A (en) * | 2009-12-25 | 2011-07-07 | Jx Nippon Mining & Metals Corp | Target backing plate assembly |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57207175A (en) * | 1981-06-17 | 1982-12-18 | Anelva Corp | Target for sputtering device |
| JPS5923870A (en) * | 1982-07-09 | 1984-02-07 | バリアン・アソシエイツ・インコ−ポレイテツド | Target assembly of specific material for sputter coating device |
| JPS59232271A (en) * | 1983-06-15 | 1984-12-27 | Nec Corp | Target for magnetron sputtering |
-
1987
- 1987-03-24 JP JP6975287A patent/JPS63235471A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57207175A (en) * | 1981-06-17 | 1982-12-18 | Anelva Corp | Target for sputtering device |
| JPS5923870A (en) * | 1982-07-09 | 1984-02-07 | バリアン・アソシエイツ・インコ−ポレイテツド | Target assembly of specific material for sputter coating device |
| JPS59232271A (en) * | 1983-06-15 | 1984-12-27 | Nec Corp | Target for magnetron sputtering |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4904362A (en) * | 1987-07-24 | 1990-02-27 | Miba Gleitlager Aktiengesellschaft | Bar-shaped magnetron or sputter cathode arrangement |
| US5336386A (en) * | 1991-01-28 | 1994-08-09 | Materials Research Corporation | Target for cathode sputtering |
| JP2011517329A (en) * | 2007-06-18 | 2011-06-02 | アプライド マテリアルズ インコーポレイテッド | Sputtering target with extended life and increased sputtering uniformity |
| US8968536B2 (en) | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
| JP2011132587A (en) * | 2009-12-25 | 2011-07-07 | Jx Nippon Mining & Metals Corp | Target backing plate assembly |
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