JPS59232271A - Target for magnetron sputtering - Google Patents
Target for magnetron sputteringInfo
- Publication number
- JPS59232271A JPS59232271A JP10698083A JP10698083A JPS59232271A JP S59232271 A JPS59232271 A JP S59232271A JP 10698083 A JP10698083 A JP 10698083A JP 10698083 A JP10698083 A JP 10698083A JP S59232271 A JPS59232271 A JP S59232271A
- Authority
- JP
- Japan
- Prior art keywords
- target
- thickness
- magnetic field
- sputtering
- intensity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はマグネトロンスパッタリング用ターゲ°ットに
関するものであり、経済性にすぐれたターゲットを提供
することを目的とするものである、近年マグネトロンス
パッタによる成膜が広く用いられている。これはマグネ
トロ/スパッタがステップカバレッジにすぐれ、低温高
速での成膜が可能なためである。しかしながらマグネト
ロンスパッタは原理上ターゲット近傍に磁界を発生させ
て使用するため磁界強度の強い位置ではスパッタリング
イールドが大きく、シたがってターゲットの消耗が特定
の位置において大きくなり、逆に磁界が存在しないよう
な位置ではほとんどターゲットが消耗しないためターゲ
ット材料の利用効率が悪いという欠点を有している。[Detailed Description of the Invention] The present invention relates to a target for magnetron sputtering, and its purpose is to provide a highly economical target.In recent years, film formation by magnetron sputtering has been widely used. ing. This is because magneto/sputtering has excellent step coverage and can form films at low temperatures and high speeds. However, since magnetron sputtering is used by generating a magnetic field near the target in principle, the sputtering yield is large at locations where the magnetic field is strong, and therefore target wear increases at specific locations, and conversely, where there is no magnetic field, the sputtering yield is large. This method has the disadvantage that the target material is not used efficiently because the target is hardly consumed at the position.
この利用効率の悪さを第1図及び第2図を用いて具体的
に説明すると、第1図(a) 、 (t))は従来から
用いているターゲラ)l及び水冷板2の使用前の斜視図
と断面図であシ、第2図(a)、Φ)は使用後の斜視図
と断面図である。第2図により磁界強度の強い特定の位
置(第2図(a) 、 (b)の3)だけターゲットが
消耗していることがわかる。このターゲットの利用効率
は磁界を発生させるマグネットの構造や強度などに依存
するが30%程度が一般である。この欠点を克服するた
めターゲット近傍の磁界分布を固定せず、変化させてタ
ーゲットの消耗領域を広くシ、利用効率を高める方法も
あるが、この方法は磁界発生構造が複雑になシ装置が高
価になるばかシでなく膜厚分布も微妙に変化するため好
ましくない。To specifically explain this poor utilization efficiency using Fig. 1 and Fig. 2, Fig. 1 (a) and (t)) show the condition of the conventionally used Targetera) l and water cooling plate 2 before use. FIG. 2(a), Φ) is a perspective view and a sectional view after use. It can be seen from FIG. 2 that the target is consumed only at specific locations where the magnetic field strength is strong (3 in FIGS. 2(a) and 2(b)). The utilization efficiency of this target depends on the structure and strength of the magnet that generates the magnetic field, but is generally about 30%. To overcome this drawback, there is a method of changing the magnetic field distribution near the target instead of fixing it to widen the target's consumption area and increase utilization efficiency, but this method requires a complicated magnetic field generation structure and is expensive. This is undesirable because it does not result in a drastic change and the film thickness distribution also changes slightly.
本発明は上記の欠点を根本的に除去するため、スパッタ
リングによるターゲットの消耗が大きい位置を含む特定
の位置においてターゲットの厚さを厚くしてターゲット
の利用効率を高めたものである。消耗が大きい位置はタ
ーゲットの厚さを厚くするが、ターゲットの装置への装
着時の位置のズレや経年的な磁界の変化分を見込んで、
上記消耗の大きい位置を含んでやや広い面積に渡ってタ
ーゲットの厚さを厚くしておくことが重要である。In order to fundamentally eliminate the above-mentioned drawbacks, the present invention increases the target's utilization efficiency by increasing the thickness of the target at specific locations, including locations where the target is largely consumed by sputtering. The thickness of the target is increased in locations where there is a lot of wear and tear, but this is done to account for misalignment when the target is attached to the device and changes in the magnetic field over time.
It is important to increase the thickness of the target over a rather wide area, including the location where the wear is large.
またほとんどスパッタされないターゲット部分″の厚さ
は利用効率を高めるためにできるだけ薄くしておくこと
が必要であシ、機械的強度が得られればよい。In addition, the thickness of the target portion, which is hardly sputtered, needs to be as thin as possible in order to improve utilization efficiency, and it is sufficient if mechanical strength can be obtained.
以下に本発明の実施例を具体的に説明する。第であシ、
破線は使用前のターゲット形状でおる。Examples of the present invention will be specifically described below. The first day,
The broken line represents the shape of the target before use.
第3図(a)、Φ) 、 (C)いずれもターゲットの
消耗が大きい位置を含む特定の位置においてターゲット
の厚みを厚くしたものである。(a)はスパッタリング
される面の方にターゲットの厚さを厚くしたものであり
、(b)はスパッタリングされない面の方に厚くしたも
のである。(1))の場合は水冷板の形状をターゲット
形状に合わせて変更する必要はあるが、スパッタされる
ターゲツト面は水平である。(C)は(a)と同じ考え
方ではあるが、厚さを厚くする部分のみに新たに同一材
料をボンディングして作 したターゲットである。In each of FIGS. 3(a), Φ), and (C), the thickness of the target is increased at specific positions including positions where target wear is large. In (a), the thickness of the target is increased toward the surface to be sputtered, and in (b), the thickness is increased toward the surface not to be sputtered. In case (1)), it is necessary to change the shape of the water-cooled plate to match the target shape, but the target surface to be sputtered is horizontal. (C) has the same concept as (a), but is a target made by newly bonding the same material only to the part where the thickness is to be increased.
本発明によるターゲットの利用効率は自ら形状によって
変化するが、具体的には(a)の場合、厚さが厚い部分
が6mNt薄い部分が1.5間の金ターゲツトでの利用
効率は60%と従来の2倍程度に改善することが可能に
なった。The utilization efficiency of the target according to the present invention varies depending on its shape, but specifically, in the case of (a), the utilization efficiency of a gold target with a thick part of 6 mN and a thin part of 1.5 is 60%. It has become possible to improve this by about twice as much as before.
なお上記に説明した第3図(a) 、 (b) 、 (
C)のいずれもターゲラ)1は水冷板2にボンディング
したものではなくターゲットlをホルダーによシ水冷板
2上に固定して使用した実施例である。In addition, Fig. 3 (a), (b), (
C) Targetera) 1 is an example in which the target l is not bonded to the water-cooled plate 2, but is used by fixing the target l on the water-cooled plate 2 using a holder.
以上のように本発明は簡便にしてその効果も太きく充分
実用に供せられるものであシ、また本発明は実施例に示
したターゲット形状に限定されるものでなく他の形状で
も当然可能である。As described above, the present invention is simple, has great effects, and can be put to practical use.Also, the present invention is not limited to the target shape shown in the embodiments, but can of course be applied to other shapes. It is.
第1図(a)、Φ)はそれぞれ従来のターゲット及び水
冷板の使用前の状態を示す斜視図と断面図、第2図(a
) 、 (blはそれぞれ従来のターゲット及び水冷板
の使用後の状態を示す斜視図と断面図、第3図(a)
、 (b) 、 (c)はそれぞれ本発明の実施例によ
るターゲット及び水冷板の状態を示す断面図である。
面図において、l・・・・・・ターゲット、2・・・・
・・水冷板、3・・・−・・ターゲットの消耗部、4・
・・・・・ターゲット接着部、を示す。
(久ノ
晃1 母
(+!2−)
事7−回
□7刊合
(パラ
プ。
□□よ」
(bン
ヶ、苦
) 3 面
03−
/−/
一/2
〜d
へ−
ノZFigures 1(a) and Φ) are a perspective view and a cross-sectional view showing the conventional target and water-cooled plate before use, respectively, and Figure 2(a) is
), (bl is a perspective view and a cross-sectional view showing the state of the conventional target and water-cooled plate after use, respectively, and Fig. 3 (a)
, (b) and (c) are sectional views showing the states of a target and a water-cooled plate, respectively, according to an embodiment of the present invention. In the plan view, l...Target, 2...
・・Water cooling plate, 3・・・−・Consumable part of target, 4・
...Indicates the target adhesion part. (Kuno Akira 1 mother (+!2-) thing 7-th □7th edition (parapu. □□yo) (bunga, bitter) 3 page 03- /-/ 1/2 ~d to- ノZ
Claims (2)
ターゲットにおいて、該ターゲットのターゲットの厚さ
をスパッタリングによるターゲットの消耗が大きい位置
を含む特定の位置において厚くすることを特徴とするマ
グネトロンスパッタリング用ターゲット。(1) A magnetron sputtering target made of the same material, which is characterized in that the thickness of the target is increased at specific positions, including positions where the target is largely consumed by sputtering.
徴とする特許請求の範囲第(1)項記載のマグネトロン
スパッタリング用ターゲット。(2) The target for magnetron sputtering according to claim (1), wherein the target is bonded to a holding material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10698083A JPS59232271A (en) | 1983-06-15 | 1983-06-15 | Target for magnetron sputtering |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10698083A JPS59232271A (en) | 1983-06-15 | 1983-06-15 | Target for magnetron sputtering |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59232271A true JPS59232271A (en) | 1984-12-27 |
Family
ID=14447419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10698083A Pending JPS59232271A (en) | 1983-06-15 | 1983-06-15 | Target for magnetron sputtering |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59232271A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63235471A (en) * | 1987-03-24 | 1988-09-30 | Nec Corp | Target for sputtering device |
JPS63307266A (en) * | 1987-06-04 | 1988-12-14 | Toshiba Corp | Sputtering target |
US5336386A (en) * | 1991-01-28 | 1994-08-09 | Materials Research Corporation | Target for cathode sputtering |
WO2002042518A1 (en) | 2000-11-27 | 2002-05-30 | Unaxis Trading Ag | Target comprising thickness profiling for an rf magnetron |
WO2008156794A2 (en) * | 2007-06-18 | 2008-12-24 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
DE102011081441B4 (en) | 2011-08-23 | 2018-12-06 | Fhr Anlagenbau Gmbh | Device for sputtering of substrates |
-
1983
- 1983-06-15 JP JP10698083A patent/JPS59232271A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63235471A (en) * | 1987-03-24 | 1988-09-30 | Nec Corp | Target for sputtering device |
JPS63307266A (en) * | 1987-06-04 | 1988-12-14 | Toshiba Corp | Sputtering target |
US5336386A (en) * | 1991-01-28 | 1994-08-09 | Materials Research Corporation | Target for cathode sputtering |
WO2002042518A1 (en) | 2000-11-27 | 2002-05-30 | Unaxis Trading Ag | Target comprising thickness profiling for an rf magnetron |
JP2010013737A (en) * | 2000-11-27 | 2010-01-21 | Oerlikon Trading Ag Truebbach | Target having profiled thickness for rf magnetron |
WO2008156794A2 (en) * | 2007-06-18 | 2008-12-24 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
WO2008156794A3 (en) * | 2007-06-18 | 2009-03-19 | Applied Materials Inc | Sputtering target having increased life and sputtering uniformity |
JP2011517329A (en) * | 2007-06-18 | 2011-06-02 | アプライド マテリアルズ インコーポレイテッド | Sputtering target with extended life and increased sputtering uniformity |
US8968536B2 (en) | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
DE102011081441B4 (en) | 2011-08-23 | 2018-12-06 | Fhr Anlagenbau Gmbh | Device for sputtering of substrates |
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