JPS63207105A - Method of adjusting resistance value of thick film resistor - Google Patents
Method of adjusting resistance value of thick film resistorInfo
- Publication number
- JPS63207105A JPS63207105A JP62040981A JP4098187A JPS63207105A JP S63207105 A JPS63207105 A JP S63207105A JP 62040981 A JP62040981 A JP 62040981A JP 4098187 A JP4098187 A JP 4098187A JP S63207105 A JPS63207105 A JP S63207105A
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- resistance value
- film resistor
- resistor
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 12
- 239000004020 conductor Substances 0.000 claims description 41
- 238000007747 plating Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、絶縁性基板に形成された厚膜抵抗体の抵抗
値調整方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for adjusting the resistance value of a thick film resistor formed on an insulating substrate.
従来、均一な厚膜抵抗体を作るのは困難で、目標値の±
２０％程度のバラツキがあシ、それ以上の抵抗値精度が
要求される場合はトリミングを行い調整していた。Conventionally, it was difficult to make uniform thick film resistors, and the target value was ±
If there was a variation of about 20% and higher resistance accuracy was required, trimming was performed to adjust.
第２図は、雑誌「電子材料Ｊ１９Ｂ４年５月号第９２頁
〜第９８頁に記載された従来の厚膜抵抗体の抵抗値調整
方法を、基板を省略して主要部を斜視図で示す構成図で
ある。図において、（１１は抵抗値を調整される厚膜抵
抗体、（２）はこの厚膜抵抗体（１）に接続された導体
基板、（３１は導体基板（２）に接触する探針、（４）
は厚膜抵抗体（１）の抵抗値を測定することＫよって、
レーザ光のＯＮ、ＯＦＦとレーザ光の走査を制御するコ
ントローラ、（５）は厚膜抵抗体（１）を切削するレー
ザ光である。Figure 2 shows a conventional method for adjusting the resistance value of a thick film resistor described in the magazine "Electronic Materials J19B4, May issue, pages 92 to 98, in a perspective view with the board omitted. It is a configuration diagram. In the figure, (11 is a thick film resistor whose resistance value is adjusted, (2) is a conductor substrate connected to this thick film resistor (1), (31 is a conductor substrate (2) Contacting probe, (4)
By measuring the resistance value of the thick film resistor (1),
A controller (5) controls ON/OFF of the laser beam and scanning of the laser beam, and is a laser beam for cutting the thick film resistor (1).
まずレーザ光＋５１を適当な光学系を用いて集光し、抵
抗値を調整されるべき厚膜抵抗体（１１に焦点を合わせ
る。探針（３１を両端に接続された導体基板（２）に接
触させ、厚膜抵抗体（１１の抵抗値を測定しなからレー
ザ光（５）を照射する。この照射により瞬間的に厚膜抵
抗体（１）を蒸発させると、抵抗体材（１）は切削され
てその抵抗値は高くなる。従ってレーザ光（５）の走査
によって所望の抵抗値まで切削すれば、所望の抵抗値を
有する抵抗体が得られる。First, laser beam +51 is focused using a suitable optical system, and focused on the thick film resistor (11) whose resistance value is to be adjusted. After making contact with the thick film resistor (11) and measuring the resistance value, irradiate it with laser light (5). When the thick film resistor (1) is instantaneously evaporated by this irradiation, the resistor material (1) is cut and its resistance value increases.Therefore, if the laser beam (5) is scanned to cut the resistor to the desired resistance value, a resistor having the desired resistance value can be obtained.
従来の厚膜抵抗体の抵抗値調整方法は、以上のように構
成されているため、レーザ光の照射によって切削溝が形
成され、この切削溝の端部にマイクロクラックが発生し
やすく、厚膜抵抗体の抵抗値が経時的に変化するという
問題点があった。The conventional method for adjusting the resistance value of a thick film resistor is configured as described above, so a cut groove is formed by irradiation with a laser beam, and microcracks are likely to occur at the end of the cut groove. There was a problem that the resistance value of the resistor changed over time.
また、レーザ光の照射によって、厚膜抵抗体の抵抗値は
連続的に変化するため、厚膜抵抗体の抵抗値を所望の抵
抗値まで調整するのに長時間を要するという問題点があ
った。Additionally, since the resistance value of the thick film resistor changes continuously due to laser light irradiation, there is a problem in that it takes a long time to adjust the resistance value of the thick film resistor to the desired resistance value. .
またレーザ光の照射時に抵抗体の温度上昇が生じ、抵抗
温度係数により抵抗値が変動するから、抵抗値の調整精
度が向上しないという問題点があった。Furthermore, the temperature of the resistor increases during irradiation with laser light, and the resistance value fluctuates depending on the temperature coefficient of resistance, so there is a problem that the accuracy of adjusting the resistance value cannot be improved.
さらにまた、厚膜抵抗体が小さくなったときに、レーザ
光で抵抗体そのものを欠除することが困難になる、微細
調整が難しいという問題点がめった。Furthermore, when a thick film resistor becomes smaller, it becomes difficult to remove the resistor itself using a laser beam, which makes fine adjustment difficult.
この発明はかかる問題点を解決するためになされたもの
で、抵抗値が経時的に変化せず、抵抗値の調整時間を短
縮でき、精度良く微細に厚膜抵抗体の抵抗値全調整する
方法を提供することを目的としている。This invention was made in order to solve these problems, and is a method for precisely and finely adjusting the entire resistance value of a thick film resistor, in which the resistance value does not change over time, the time for adjusting the resistance value can be shortened, and the resistance value of a thick film resistor does not change over time. is intended to provide.
この発明の厚膜抵抗体の抵抗値調整方法は、絶縁性基板
に厚膜抵抗体を形成し、この厚膜抵抗体と接続する導体
をめっきで形成し、この導体を切断あるいは除去するこ
とにより、上記厚膜抵抗体の抵抗値を調整するようにし
たものである。The method of adjusting the resistance value of a thick film resistor according to the present invention includes forming a thick film resistor on an insulating substrate, forming a conductor connected to the thick film resistor by plating, and cutting or removing the conductor. , the resistance value of the thick film resistor is adjusted.
この発明においては、抵抗体をレーザ光の照射によって
切削することがないので、抵抗体が損傷を受けず、厚膜
抵抗体の抵抗値は経時的にほとんど変化しない。また、
調整中の抵抗体の抵抗値を段階的に変えられるため、抵
抗体の抵抗値の調整時間も短縮される。またレーザ光照
射時に抵抗体の温度はほとんど上昇しないから、精度良
く抵抗値を調整することが可能となる。In this invention, since the resistor is not cut by irradiation with laser light, the resistor is not damaged and the resistance value of the thick film resistor hardly changes over time. Also,
Since the resistance value of the resistor being adjusted can be changed stepwise, the time for adjusting the resistance value of the resistor is also shortened. Furthermore, since the temperature of the resistor hardly rises during laser beam irradiation, it is possible to adjust the resistance value with high precision.
さらにまた、従来厚膜抵抗体は厚膜導体でしかコンタク
トがとれなかったが、例えば特開昭６１−１９４７９４
号公報記載の技術を用いてめっきで導体を形成している
。めっきで導体を形成するものは、正確に微細なパター
〉が形成されやすいので、そのめっき導体を切断又は除
去することにより抵抗値の微細調整が可能となる。Furthermore, conventional thick film resistors could only be contacted with thick film conductors;
The conductor is formed by plating using the technology described in the publication. When a conductor is formed by plating, it is easy to form an accurately fine pattern, so fine adjustment of the resistance value is possible by cutting or removing the plated conductor.
この発明の一実施例を図について説明する。第１図はこ
の発明の一実施例による抵抗体の抵抗値制御方法を、基
板を省略して主要部を斜視図で示す構成図である。図に
おいて、（１）は厚膜抵抗体で、この場合は酸化ルテニ
ウム系厚膜抵抗体（以下抵抗体と記す） 、＋２１は端
子導体、（３１，（４１は従来例と同様のもので、１５
）はレーザ光で、この場合はＹＡＧレーザ光、（６１は
抵抗体＋１１と端子導体（２）に接続する導体で、この
場合はめつきにより形成されためつき銅導体（以下導体
と記す） 、＋７１ 、 ＋８１は抵抗体（１１の周囲
に位置する導体（６１の切断部である。An embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a block diagram illustrating a method for controlling the resistance value of a resistor according to an embodiment of the present invention in a perspective view, with the board omitted. In the figure, (1) is a thick film resistor, in this case a ruthenium oxide thick film resistor (hereinafter referred to as a resistor), +21 is a terminal conductor, (31, (41 are similar to the conventional example), 15
) is a laser beam, in this case a YAG laser beam, (61 is a conductor connected to the resistor +11 and the terminal conductor (2), in this case a plated copper conductor (hereinafter referred to as a conductor) formed by plating, +71 , +81 is the cutting part of the conductor (61) located around the resistor (11).
厚膜抵抗体（１１に接続してめっき導体を形成する方法
については、例えば同一出願人による特開昭６１−１９
４７９４号公報に記載されている。For a method of connecting a thick film resistor (11) to form a plated conductor, see, for example, Japanese Patent Laid-Open No. 61-19 by the same applicant.
It is described in No. 4794.
ＹＡＧレーザ光を出力ＩＷで導体（６）の切断部（す）
に照射し、切断したところ、初期抵抗５２．５にΩの抵
抗体ｉｌ＋は、５７．２ ＫΩに変化した。さらに切断
部（８）を切断したところ５９．８ ＫΩに変化した。Cutting part of conductor (6) with YAG laser beam output IW
When the resistor il+ had an initial resistance of 52.5 Ω, it changed to 57.2 KΩ. When the cut portion (8) was further cut, the resistance changed to 59.8 KΩ.
次にＹＡＧレーザ光の出力を０．３ Ｗとし、抵抗体（
１１上の導体（６）に照射し、所望の抵抗値６０．０に
Ωを得た。この際抵抗体（１１上の導体（６）は切削さ
れたが、抵抗体（１１は切削（損傷）されなかった。Next, the output of the YAG laser beam was set to 0.3 W, and the resistor (
The conductor (6) on 11 was irradiated to obtain a desired resistance value of 60.0Ω. At this time, the conductor (6) on the resistor (11) was cut, but the resistor (11) was not cut (damaged).
これにより得られた抵抗体（１）は切削溝が形成されな
いため、抵抗体が損傷を受けず、変質もしない。またマ
イクロクラックが発生せず、抵抗値が経時的に変化する
ことはほとんどない。また、調整中に抵抗体（１）の抵
抗値は、段階的に変化するため調整時間は短縮される。Since the resistor (1) thus obtained has no cut grooves, the resistor is not damaged and does not change in quality. Furthermore, no microcracks occur, and the resistance value hardly changes over time. Furthermore, since the resistance value of the resistor (1) changes stepwise during adjustment, the adjustment time is shortened.
またレーザ照射時に抵抗体の温度上昇はほとんど認めら
れず、調整精度が向上された。Furthermore, there was almost no temperature rise in the resistor during laser irradiation, and adjustment accuracy was improved.
また、抵抗体が小さくなったときには、レーザで抵抗そ
のものを欠除することが困難となシ微細調整が難しい。Furthermore, when the resistor becomes smaller, it is difficult to remove the resistor itself using a laser, making fine adjustment difficult.
従来厚膜抵抗体は厚膜導体でしかコシタクトがとれなか
った。厚膜導体の場合導体の巾（Ｌｉｎｅ）／導体間（
５ｐａｃｅ ） （以下Ｌ／ｓと記す）は１００ ｐｍ
／ １００ 、ｔｔｒｎで抵抗値調整し”＜ＩＬ／は５
０００レベルである。ところがめつき導体の場合現状で
はＬ／Ｓ＝２０）ｔｍで抵抗値調整レベルは１０００レ
ベルであり、将来的にはＬ／Ｓ ＝ １０μｍ／１０７
Ｉｒｎも十分可能であり、抵抗値調整レベルもよシ向上
できる。即ち、めっきで導体を形成するものは正確に微
細なパターシが形成されやすいので、そのめっき導体を
切断又は除去することにより、抵抗値の微細調整が可能
となる。Conventional thick film resistors have only been able to achieve tight tact with thick film conductors. For thick film conductors, the width of the conductor (Line)/between the conductors (
5 pace) (hereinafter referred to as L/s) is 100 pm
/100, adjust the resistance value with ttrn, and "<IL/" is 5
000 level. However, in the case of a plated conductor, currently L/S = 20)tm and the resistance value adjustment level is 1000 level, and in the future L/S = 10μm/107
Irn is also fully possible, and the resistance value adjustment level can also be improved. That is, since conductors formed by plating tend to form accurate fine patterns, fine adjustment of the resistance value becomes possible by cutting or removing the plated conductors.
上記実施例では抵抗体（１）が酸化ルテニウム系厚膜抵
抗体についてのみ述べているが、他の厚膜抵抗体につい
ても適用可能である。In the above embodiments, only the ruthenium oxide thick film resistor is described as the resistor (1), but the present invention is also applicable to other thick film resistors.
また、導体（６）としてめっき銅導体を用いているが、
他のめつき導体であっても良（、導体（６）は端子導体
（２）に接続するとしているが、接続せずども抵抗体（
１）の抵抗値の変化が生じるため同様の効果を奏する。In addition, a plated copper conductor is used as the conductor (6),
Other plated conductors may be used (although the conductor (6) is said to be connected to the terminal conductor (2), it is not connected but the resistor (
Since the change in the resistance value of 1) occurs, a similar effect is produced.
さらに、レーザ光は赤外光域のＹＡＧレーザ光を用いて
いるが、これに必らず、導体材料と抵抗体の材料によっ
ては、可視光域又は紫外光域のレーザ光も適用可能であ
る。Furthermore, although YAG laser light in the infrared light range is used as the laser light, laser light in the visible light range or ultraviolet light range may also be applicable depending on the conductor material and the material of the resistor. .
以上のように、この発明によれば、絶縁性基板に厚膜抵
抗体を形成し、この厚膜抵抗体と接続する導体をめっき
で形成し、この導体を切断あるいは除去することにより
上記厚膜抵抗体の抵抗値を調整するようにしたので、抵
抗体の抵抗値が経時的にほとんど変化せず、調整時間を
短縮でき、精度良く微細に厚膜抵抗体の抵抗値を調整で
きる効果がある。As described above, according to the present invention, a thick film resistor is formed on an insulating substrate, a conductor connected to the thick film resistor is formed by plating, and the conductor is cut or removed. Since the resistance value of the resistor element is adjusted, the resistance value of the resistor element hardly changes over time, reducing adjustment time and making it possible to precisely and finely adjust the resistance value of the thick film resistor element. .
第１図はこの発明の一実施例の厚膜抵抗体の抵抗値調整
方法を、基板を省略して主要部を斜視図で示す構成図、
第２図は従来の厚膜抵抗体の抵抗値調整方法を、基板を
省略して主要部を斜視図で示す構成図である。
図において、ｆｉ＋は厚膜抵抗体、（２）は導体である
。
なお、図中同一符号は同−又は相当部分を示す。FIG. 1 is a configuration diagram showing a method for adjusting the resistance value of a thick film resistor according to an embodiment of the present invention in a perspective view with the substrate omitted;
FIG. 2 is a block diagram showing a conventional method for adjusting the resistance value of a thick film resistor in a perspective view of the main parts with the substrate omitted. In the figure, fi+ is a thick film resistor, and (2) is a conductor. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (5)
体と接続する導体をめつきで形成し、この導体を切断あ
るいは除去することにより上記厚膜抵抗体の抵抗値を調
整するようにした厚膜抵抗体の抵抗値調整方法。(1) Form a thick film resistor on an insulating substrate, form a conductor to connect to this thick film resistor by plating, and adjust the resistance value of the thick film resistor by cutting or removing the conductor. A method for adjusting the resistance value of a thick film resistor.
矩形波状に形成されている特許請求の範囲第１項記載の
厚膜抵抗体の抵抗値調整方法。(2) The method for adjusting the resistance value of a thick film resistor according to claim 1, wherein the conductor formed by plating is connected to the thick film resistor and formed in a rectangular wave shape.
請求の範囲第１項又は第２項記載の厚膜抵抗体の抵抗値
調整方法。(3) A method for adjusting the resistance value of a thick film resistor according to claim 1 or 2, in which a laser beam is used to cut or remove the conductor.
許請求の範囲第１項ないし第３項のいずれかに記載の厚
膜抵抗体の抵抗値調整方法。(4) The method for adjusting the resistance value of a thick film resistor according to any one of claims 1 to 3, wherein the conductor formed by plating is a plated copper conductor.
請求の範囲第１項ないし第４項のいずれかに記載の厚膜
抵抗体の抵抗値調整方法。(5) The method for adjusting the resistance value of a thick film resistor according to any one of claims 1 to 4, wherein the cutting position of the conductor is a peripheral portion of the thick film resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62040981A JPS63207105A (en) | 1987-02-24 | 1987-02-24 | Method of adjusting resistance value of thick film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62040981A JPS63207105A (en) | 1987-02-24 | 1987-02-24 | Method of adjusting resistance value of thick film resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63207105A true JPS63207105A (en) | 1988-08-26 |
Family
ID=12595608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62040981A Pending JPS63207105A (en) | 1987-02-24 | 1987-02-24 | Method of adjusting resistance value of thick film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63207105A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006080331A (en) * | 2004-09-10 | 2006-03-23 | Cmk Corp | Printed wiring board |
| JP2008512872A (en) * | 2004-09-13 | 2008-04-24 | エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド | Analysis method of thermoelectric potential during laser trimming to resistor |
-
1987
- 1987-02-24 JP JP62040981A patent/JPS63207105A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006080331A (en) * | 2004-09-10 | 2006-03-23 | Cmk Corp | Printed wiring board |
| JP2008512872A (en) * | 2004-09-13 | 2008-04-24 | エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド | Analysis method of thermoelectric potential during laser trimming to resistor |
| JP4785854B2 (en) * | 2004-09-13 | 2011-10-05 | エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド | Analysis method of thermoelectric potential during laser trimming to resistor |
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