JPS63207104A - Method of adjusting resistance value of thick film resistor - Google Patents
Method of adjusting resistance value of thick film resistorInfo
- Publication number
- JPS63207104A JPS63207104A JP62040982A JP4098287A JPS63207104A JP S63207104 A JPS63207104 A JP S63207104A JP 62040982 A JP62040982 A JP 62040982A JP 4098287 A JP4098287 A JP 4098287A JP S63207104 A JPS63207104 A JP S63207104A
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- film resistor
- resistance value
- conductor
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 20
- 239000004020 conductor Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 13
- 238000000206 photolithography Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 63
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005553 drilling Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は例えばスクリーン印刷法などによって得られ
る厚膜抵抗体の抵抗値を調整する方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for adjusting the resistance value of a thick film resistor obtained by, for example, a screen printing method.
従来、均一な厚膜抵抗体を作るのは困難で、目標値の±
２０％程度のバラツキがあり、それ以上の抵抗値精度が
要求される場合はトリミングを行い調整していた。Conventionally, it was difficult to make uniform thick film resistors, and the target value was ±
There was a variation of about 20%, and if greater resistance accuracy was required, trimming was performed to adjust.
第２図は、雑誌［電子材料Ｊ１９８４年５月号第５月号
〜第９８頁に記載された従来の厚膜抵抗体の抵抗値調整
方法を示す断面構成図である。図において、（１１は′
抵抗値を調整される厚膜′抵抗体、（２）はこの厚膜抵
抗体（１）に接続された導体基板、（３）は導体基板（
２）に接触する探針、（４１は厚膜抵抗体１０の抵抗値
を測定することによって、レーザ光のＯＮ、ＯＦＦとレ
ーザ光の走査を制御するコントローラ、（５）は厚膜抵
抗体（１）を切削し、その厚膜抵抗体の抵抗値を増加さ
せるレーザ光で、例えば連続発振レーザ光、又は短パル
ス間隔のパルスレーザ光、（６）は絶縁性基板である。FIG. 2 is a cross-sectional configuration diagram showing a conventional method for adjusting the resistance value of a thick film resistor, which is described in the magazine [Electronic Materials J, May 1984, May issue, page 98. In the figure, (11 is '
A thick film resistor whose resistance value is adjusted, (2) a conductor substrate connected to this thick film resistor (1), and (3) a conductor substrate (
(2) is a probe that contacts the thick film resistor (41 is a controller that controls ON/OFF of the laser light and scanning of the laser light by measuring the resistance value of the thick film resistor 10; (5) is a controller that controls the laser light scanning by measuring the resistance value of the thick film resistor 10; (1) is a laser beam that cuts the thick film resistor and increases the resistance value of the thick film resistor, such as a continuous wave laser beam or a pulsed laser beam with a short pulse interval; (6) is an insulating substrate.
まず、レーザ光（５」を適当な光学系を用いて集光し、
抵抗値を制御されるべき厚膜抵抗体（１）に焦点を合わ
せる。探針（３）を両端に接続された導体基板（２）に
接触させ、抵抗体（１）の抵抗値を測定しなからレーザ
光Ｃ５）を照射する。この照射により瞬間的に厚膜抵抗
体（１１を蒸発させると、厚膜抵抗体（１）は切削され
てその抵抗値は高くなる。従ってレーザ光＋５１の走査
によって所望の抵抗値まで切削すれば、所望の抵抗値を
有する厚膜抵抗体が得られる。First, the laser beam (5) is focused using a suitable optical system,
Focus on the thick film resistor (1) whose resistance value is to be controlled. The probe (3) is brought into contact with the conductive substrate (2) connected to both ends, and the resistance value of the resistor (1) is measured before irradiating the laser beam C5). When the thick film resistor (11) is instantaneously evaporated by this irradiation, the thick film resistor (1) is cut and its resistance value increases. , a thick film resistor having a desired resistance value can be obtained.
従来の厚膜抵抗体の抵抗値調整方法は以上のように構成
されているため、レーザ光で切削するという工程が必要
であり、レーザ光の照射によって切削溝が形成され、こ
の切削溝の端部にマイクロクラックが発生しやすく、厚
膜抵抗体の抵抗値が経時的に変化するという問題点があ
った。The conventional method for adjusting the resistance value of a thick film resistor is configured as described above, and therefore requires a process of cutting with laser light. There were problems in that microcracks were likely to occur in the thick film resistor and the resistance value of the thick film resistor changed over time.
また、レーザ光の照射によって厚膜抵抗体の抵抗値は連
続的に変化するため、厚膜抵抗体の抵抗値を所望の抵抗
値まで調整するのに長時間を要するという問題点があっ
た。Furthermore, since the resistance value of the thick film resistor changes continuously due to laser light irradiation, there is a problem in that it takes a long time to adjust the resistance value of the thick film resistor to a desired resistance value.
この発明はかかる問題点を解決するたゆになされたもの
で、抵抗値が経時的罠変化せず、抵抗値の調整時間を短
縮でき、精度良く厚膜抵抗体の抵抗値を調整する方法を
提供することを目的とする。This invention was made to solve these problems, and provides a method for accurately adjusting the resistance value of a thick film resistor, which prevents the resistance value from changing over time, reduces the time required to adjust the resistance value, and provides a method for accurately adjusting the resistance value of a thick film resistor. The purpose is to provide.
この発明の厚膜抵抗体の抵抗値調整方法は絶縁性基板上
に厚膜抵抗体を形成し、その抵抗値をモニタリングし、
その値に応じて上記厚膜抵抗体の導体で被われない部分
の形状を決定し、この決定に基いて上記厚膜抵抗体と接
続する導体を形成するようにしたものである。The method for adjusting the resistance value of a thick film resistor of the present invention involves forming a thick film resistor on an insulating substrate, monitoring its resistance value, and
The shape of the portion of the thick film resistor not covered by the conductor is determined according to the value, and a conductor connected to the thick film resistor is formed based on this determination.
この発明においては厚膜抵抗体をこれと接続する導体の
パターンを変化させて抵抗値を調整するものであるから
、厚膜抵抗体は切削溝を形成されないから、損傷を受け
ず、マイクロクラックが発生しないので抵抗値の経時的
変化を防止できる。In this invention, the resistance value is adjusted by changing the pattern of the conductor that connects the thick film resistor to the thick film resistor, so the thick film resistor does not have cut grooves, so it is not damaged and does not have microcracks. Since this does not occur, changes in resistance value over time can be prevented.
また調整に要する時間を短縮することができる。Moreover, the time required for adjustment can be shortened.
また導体は抵抗体を形成した後に形成するので、抵抗体
形成時での抵抗値のばらつきに応じて導体パターン変化
させることができるので、最終的ばらつきを小さくでき
る。Furthermore, since the conductor is formed after forming the resistor, the conductor pattern can be changed in accordance with the variation in resistance value at the time of forming the resistor, so that the final variation can be reduced.
この発明の一実施例を図について説明する。第１図はこ
の発明の一実施例による厚膜抵抗体を示す断面図である
。図において、（１；は厚膜抵抗体で、この場合は酸化
ルテニウム系厚膜抵抗体、（６）は絶縁性基板で、この
場合はアルミナセラミックス基板、（７）は感光性レジ
ス） 、１８１は厚膜抵抗体（１１と電気的に接続する
導体で、この場合はめつき銅導体パターンである。An embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a sectional view showing a thick film resistor according to an embodiment of the present invention. In the figure, (1; is a thick film resistor, in this case a ruthenium oxide thick film resistor, (6) is an insulating substrate, in this case an alumina ceramics substrate, and (7) is a photosensitive resist), 181 is a conductor electrically connected to the thick film resistor (11), which in this case is a plated copper conductor pattern.
まず、厚膜抵抗体（１）をスクリーン印刷によって絶縁
性基板上に印刷、焼成によって形成する。厚膜抵抗体を
均一に作るのは困難で、材料や製造条件によって目標値
の±２０％程度のバラツキが生じる。ところが、例えば
同じロットの場合、厚膜抵抗体（１１のペーストの種類
と印刷及び焼成の条件が同じで、厚膜抵抗体（１）のシ
ート抵抗よりその抵抗値はおのずと定まる。そこで、形
成された厚膜抵抗体の抵抗値をモニタリングする。この
後、厚膜抵抗体（１１及び絶縁性基板＋６）上に化学銅
めっきを析出させ、さらにその化学銅めっきを厚膜抵抗
体と電気的に接続させる作用を有する活性化処理を施し
、その上に感光性レジストを写真製版法によりパターニ
シグした後、化学銅めっき浴に浸漬して厚膜抵抗体の両
端にめっき銅導体パターンを形成する。なお、この厚膜
抵抗体（１）に接続してめっき導体を形成する方法につ
いては、例えば同一出願人による特開昭６１−１９４７
９４号公報に記載されている。この際、モニタリングし
た厚膜抵抗体の抵抗値に応じて厚膜抵抗体の導体で被わ
れない部分の形状を決定し、この決定に基いて、感光性
レジストの写真製版法に用いるマスクパターンのサイズ
を適当に選択すれば、先に決められた部分以外に導体が
形成され所望の抵抗値を有する厚膜抵抗体を容易に得る
ことができる。First, a thick film resistor (1) is printed on an insulating substrate by screen printing and is formed by firing. It is difficult to make a thick film resistor uniformly, and variations of about ±20% of the target value occur depending on the material and manufacturing conditions. However, for example, in the case of the same lot, the type of paste and printing and firing conditions of the thick film resistor (11) are the same, and the resistance value is naturally determined from the sheet resistance of the thick film resistor (1). Monitor the resistance value of the thick film resistor.After this, chemical copper plating is deposited on the thick film resistor (11 and insulating substrate +6), and the chemical copper plating is electrically connected to the thick film resistor. After performing an activation treatment that has the effect of connecting, and patterning a photosensitive resist thereon by photolithography, it is immersed in a chemical copper plating bath to form plated copper conductor patterns on both ends of the thick film resistor. The method of forming a plated conductor by connecting to this thick film resistor (1) is described, for example, in Japanese Patent Laid-Open No. 61-1947 by the same applicant.
It is described in Publication No. 94. At this time, the shape of the part of the thick film resistor that is not covered by the conductor is determined according to the monitored resistance value of the thick film resistor, and based on this determination, the mask pattern used in the photolithographic process of the photosensitive resist is created. By appropriately selecting the size, it is possible to easily obtain a thick film resistor having conductors formed in areas other than the predetermined portions and having a desired resistance value.
このように、導体（１）形成プロセスは厚膜抵抗体（１
）形成後であるから、抵抗体の特性にあわせてマスクパ
ターンのサイズを変えれば、所定の抵抗値が得られ、最
終的ばらつきを小さくでき、その後の調整が不要となる
効果がある。得られた厚膜抵抗体はレーザ光で切削する
どいり工程を必要としないために損傷を受けず、マイク
ロクラックが発生しないので抵抗値の経時的変化を防止
することができる。また厚膜抵抗体の抵抗値の調整時間
を短縮できる。In this way, the process of forming the conductor (1) is similar to the process of forming the thick film resistor (1).
) After formation, by changing the size of the mask pattern according to the characteristics of the resistor, a predetermined resistance value can be obtained, final variations can be reduced, and subsequent adjustments are unnecessary. The obtained thick film resistor does not require a drilling process of cutting with a laser beam, so it is not damaged, and since microcracks do not occur, changes in resistance value over time can be prevented. Further, the time required to adjust the resistance value of the thick film resistor can be shortened.
さらに、従来法では厚膜抵抗体が小さくなったときに、
レーザ光で抵抗体そのものを欠除することが困難で、微
細調整が難しいという問題点があった。ところが、この
実施例では写真製版法を用いてめっきで導体を形成して
いるので、正確に微細な導体パターンが形成されやすい
ので、抵抗値の微細調整が可能となる。Furthermore, in the conventional method, when the thick film resistor becomes smaller,
There was a problem in that it was difficult to remove the resistor itself using a laser beam, making it difficult to make fine adjustments. However, in this embodiment, since the conductor is formed by plating using a photolithography method, it is easy to form an accurate fine conductor pattern, thereby making it possible to finely adjust the resistance value.
さらにまた、モニタリングされた抵抗値に応じてマスク
パターンを選択するが抵抗値精度の高い厚膜抵抗体が要
求される場合、多数のマスクパターンが必要となる。と
ころが、あるマスクパターンを用いて露光を行なった後
、スポット露光を繰り返して所望の導体パターンが形成
されるようレジストを除去する、あるいは、例えば００
２レーザによりレジスト膜に穴あけ加工を施して微調整
を行い所望パターンに導体を形成する等多数のマスクパ
ターンがなくともフレキシブルに対応でき、抵抗値の微
細調整も簡単に行える。Furthermore, a mask pattern is selected depending on the monitored resistance value, but if a thick film resistor with high resistance value accuracy is required, a large number of mask patterns are required. However, after exposure is performed using a certain mask pattern, the resist is removed by repeating spot exposure to form a desired conductor pattern, or, for example, with 00
This method can be used flexibly without the need for multiple mask patterns, such as making fine adjustments by drilling holes in the resist film using a two-laser laser to form conductors in a desired pattern, and it is also possible to easily make fine adjustments to the resistance value.
なお、上記実施例では導体としてめっき銅導体パターン
を用いているが、他の導体でも同様の効果を奏する。Note that although a plated copper conductor pattern is used as the conductor in the above embodiment, other conductors can also produce similar effects.
また、感光性レジストのバターニング後に導体パターン
を形成しているが、この工程を逆にして、導体形成後に
感光性レジストをバターニングし導体をエツチングする
ことにより、導体パターンを形成しても同様の効果を奏
する。Although the conductor pattern is formed after patterning the photosensitive resist, it is also possible to reverse this process and form the conductor pattern by patterning the photosensitive resist and etching the conductor after forming the conductor. It has the effect of
この発明によれば、例えば厚膜抵抗体の抵抗値にロット
間バラツキがあっても、ロット毎に抵抗値をモニタリン
グし、その値に基いて厚膜抵抗体に接続する導体パター
ンを変えて抵抗値を調整してバラツキを吸収している。According to this invention, for example, even if there is variation between lots in the resistance value of a thick film resistor, the resistance value is monitored for each lot and the conductor pattern connected to the thick film resistor is changed based on that value. Variations are absorbed by adjusting the values.
従って厚膜抵抗体はレーザ光で切削するという工程を必
要としないために厚膜抵抗体の抵抗値の調整時間を短縮
でき、この結果この厚膜抵抗体を搭載するたとえばハイ
ブリッドＩＣなどの混成回路基板を容易に得ることがで
きる。Therefore, since the thick film resistor does not require the process of cutting with a laser beam, the time required to adjust the resistance value of the thick film resistor can be shortened, and as a result, a hybrid circuit such as a hybrid IC equipped with the thick film resistor can be assembled. The substrate can be easily obtained.
この発明では厚膜抵抗体についてのみ述べているが、薄
膜抵抗体など他の膜状抵抗体についても応用可能である
。Although this invention describes only thick film resistors, it is also applicable to other film resistors such as thin film resistors.
以上のようにこの発明によれば、絶縁性基板上に厚膜抵
抗体を形成し、その抵抗値をモニタリングし、その値に
応じて上記厚膜抵抗体の導体で被われない部分の形状を
決定し、この決定に基いて上記厚膜抵抗体と接続する導
体を形成することにより、抵抗値が経時的に変化せず、
精度良く短時間に厚膜抵抗体の抵抗値を調整できる効果
がある。As described above, according to the present invention, a thick film resistor is formed on an insulating substrate, its resistance value is monitored, and the shape of the portion of the thick film resistor that is not covered by the conductor is determined according to the value. By determining this and forming a conductor connected to the thick film resistor based on this determination, the resistance value does not change over time.
This has the effect of being able to adjust the resistance value of the thick film resistor with high precision and in a short time.
第１図はこの発明の一実施例による厚膜抵抗体を示す断
面図、第２図は従来の厚膜抵抗体の抵抗値調整方法を示
す断面構成図である０
図において、（１）は厚膜抵抗体、（６）は絶縁性基板
、（７）は感光性レジス） 、＋８１は導体である。
なお、図中同一符号は同−又は相当部分を示す、。FIG. 1 is a sectional view showing a thick film resistor according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional method for adjusting the resistance value of a thick film resistor. (6) is an insulating substrate, (7) is a photosensitive resist), +81 is a conductor. In addition, the same reference numerals in the figures indicate the same or equivalent parts.
Claims (3)
をモニタリングし、その値に応じて上記厚膜抵抗体の導
体で被われない部分の形状を決定し、この決定に基いて
上記厚膜抵抗体と接続する導体を形成するようにした厚
膜抵抗体の抵抗値調整方法。(1) Form a thick film resistor on an insulating substrate, monitor its resistance value, determine the shape of the portion of the thick film resistor that is not covered by the conductor according to the value, and based on this determination. A method for adjusting the resistance value of a thick film resistor, the method comprising: forming a conductor to be connected to the thick film resistor.
る特許請求の範囲第１項記載の厚膜抵抗体の抵抗値調整
方法。(2) The method for adjusting the resistance value of a thick film resistor according to claim 1, wherein the conductor connected to the thick film resistor is formed by photolithography.
ングで形成する特許請求の範囲第１項記載の厚膜抵抗体
の抵抗値調整方法。(3) The method for adjusting the resistance value of a thick film resistor according to claim 1, wherein the conductor connected to the thick film resistor is formed by photolithography and etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62040982A JPS63207104A (en) | 1987-02-24 | 1987-02-24 | Method of adjusting resistance value of thick film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62040982A JPS63207104A (en) | 1987-02-24 | 1987-02-24 | Method of adjusting resistance value of thick film resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63207104A true JPS63207104A (en) | 1988-08-26 |
Family
ID=12595636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62040982A Pending JPS63207104A (en) | 1987-02-24 | 1987-02-24 | Method of adjusting resistance value of thick film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63207104A (en) |
-
1987
- 1987-02-24 JP JP62040982A patent/JPS63207104A/en active Pending
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