JPS63192863A - Mosaic type target device - Google Patents
Mosaic type target deviceInfo
- Publication number
- JPS63192863A JPS63192863A JP2473887A JP2473887A JPS63192863A JP S63192863 A JPS63192863 A JP S63192863A JP 2473887 A JP2473887 A JP 2473887A JP 2473887 A JP2473887 A JP 2473887A JP S63192863 A JPS63192863 A JP S63192863A
- Authority
- JP
- Japan
- Prior art keywords
- mosaic
- targets
- back plate
- plasma
- coating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 9
- 239000000956 alloy Substances 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 238000005488 sandblasting Methods 0.000 claims abstract description 4
- 150000002739 metals Chemical class 0.000 claims description 7
- 238000007750 plasma spraying Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 6
- 238000011109 contamination Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 238000007751 thermal spraying Methods 0.000 abstract description 2
- 238000007788 roughening Methods 0.000 abstract 1
- 239000013077 target material Substances 0.000 abstract 1
- 229910017052 cobalt Inorganic materials 0.000 description 5
- 239000010941 cobalt Substances 0.000 description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- -1 i.e. Chemical compound 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はスパッタリング用のモザイク式のターゲット装
置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a mosaic target device for sputtering.
（従来の技術）
従来この種装置として、例えば第１図及び第２図示のよ
うに、バックプレートａ上に、少な（とも２種類の金属
又は合金の一方から成る第１モザイクターゲットｂと、
その他方から成る第２モザイクターゲットＣとを交互の
複数個に並設する式のものは知られており、更にこのも
のにおいて、互に隣接する各１対のターゲットｂ、ｃ間
に生ずる隙間ｄによる不都合、即ちスパッタリング操作
に際し、プラズマイオンが該隙間ｄを介して直接該バッ
キングプレートａに作用して該プレートａからの汚染物
質が該プラズマ中に拡散するような不都合を無くすべく
、各隙間ｄを同図示のように一側に傾斜させるようにし
た式のものも知られる。（特公昭６１−３４５０９号参
照）
（発明が解決しようとする問題点）
然し乍ら、か）るものでは、該隙間に該傾斜を与えるべ
く、各ターゲットｂ、ｃは例えば第３図に明示するよう
に断面方形の素材に対しその両側面を各傾斜面に加工す
るを要しこれは作業が面倒であると共に左右に大きな削
り代を生じて材料の無駄を伴い勝ちである等の不都合を
伴う。(Prior Art) Conventionally, as shown in FIGS. 1 and 2, a conventional device of this type includes a first mosaic target b made of one of two types of metals or alloys on a back plate a;
A type in which a plurality of second mosaic targets C consisting of the other mosaic target C are arranged in parallel is known, and furthermore, in this type, a gap d is formed between each pair of adjacent targets b and c. In order to eliminate the inconvenience caused by plasma ions directly acting on the backing plate a through the gap d and contaminants from the plate a being diffused into the plasma during sputtering operation, each gap d is There is also known a type in which the angle is tilted to one side as shown in the figure. (Refer to Japanese Patent Publication No. 61-34509.) (Problems to be Solved by the Invention) However, in such a device, in order to give the slope to the gap, each target b, c is set as shown in FIG. 3, for example. It is necessary to process both sides of a material having a rectangular cross-section into inclined surfaces, which is a cumbersome process and also involves disadvantages such as large cutting allowances on the left and right sides, resulting in wasted material.
（問題点を解決するための手段）
本発明はか）る不都合のない装置を得ることをその目的
としたもので、バックプレート上に少なくとも２種類の
金属又は合金の一方から成る第１モザイクターゲットを
、その他方から成る第２モザイクターゲットとを交互に
複数個に並設するものにおいて、該バックプレートの表
面を、予めサンドブラストその他で粗面に形成した後、
これに前記した２種類の金属又は合金の何れか一方から
成るコーティング被膜をプラズマ溶射その他により施す
ことを特徴とする。(Means for Solving the Problems) The object of the present invention is to obtain a device free from the above disadvantages, in which a first mosaic target made of one of at least two types of metals or alloys is disposed on a back plate. and a second mosaic target consisting of the other one are arranged in parallel in a plurality of pieces alternately, and after the surface of the back plate is formed into a rough surface by sandblasting or the like in advance,
It is characterized in that a coating film made of one of the two types of metals or alloys described above is applied thereto by plasma spraying or other methods.
（実施例） 本発明実施の１例を別紙図面に付説明する。(Example) An example of implementing the present invention will be explained with reference to the attached drawings.
第４図及び第５図はその１例を示すもので、（１）はバ
ッキングプレートを示し、該プレート（１）上に少なく
とも２種類の金属又は合金例えばコバルトとクロムとの
一方、即ちコバルトから成る第１モザイクターゲット（
乃と、その他方即ちクロムから成る第２モザイクターゲ
ット（３）とを交互の複数個に並設する。図面で（４）
は各１対のターゲット（２） （３）間の隙間を示す。FIGS. 4 and 5 show one example, in which (1) shows a backing plate, on which plate (1) at least two types of metals or alloys, such as one of cobalt and chromium, i.e., cobalt The first mosaic target consisting of (
A plurality of second mosaic targets (3) made of chrome and the other one, that is, chrome, are arranged in parallel. In the drawing (4)
indicates the gap between each pair of targets (2) and (3).
以上は先に提案したものと特に異ならないが、本発明に
よれば、該バッキングプレート（１）の表面を予めサン
ドブラストその他で例えば１０〜５０ミクロンの粗面に
形成させた後、その表面に前記した２種類の金属又は合
金、即ちコバルトとクロムとの何れか一方、例えばコバ
ルトから成るコーティング被膜（５）を、例えばプラズ
マ溶射、ガス溶射により １００〜５００ミクロンの肉
厚に形成させ、次いでその上面に前記した各ターゲット
（２） （３）を並設するが、この場合、各ターゲット
（２） （３）と、該被Ｍｌ（５）との各対向面はサン
ドブラストその他により例えば１０〜５０ミクロンの粗
面に形成されることが好ましく、これにより両者間の接
触面積を増大して接触抵抗を減少させることが出来る。Although the above is not particularly different from what was proposed earlier, according to the present invention, the surface of the backing plate (1) is formed in advance into a rough surface of, for example, 10 to 50 microns by sandblasting or other means, and then the A coating film (5) made of one of the two metals or alloys, cobalt and chromium, for example cobalt, is formed to a thickness of 100 to 500 microns by, for example, plasma spraying or gas spraying, and then the upper surface thereof is The above-mentioned targets (2) and (3) are arranged in parallel, but in this case, the opposing surfaces of each target (2) and (3) and the Ml to be treated (5) are sandblasted or otherwise to a thickness of 10 to 50 microns, for example. It is preferable that the contact surface be formed on a rough surface, thereby increasing the contact area between the two and reducing the contact resistance.
尚この場合、各隙間（４）は、スパッタリング操作に際
し、プラズマイオンの導入を許容するも、該イオンはバ
ッキングプレート（１）に作用することなく、該被膜（
５）に作用してその物質、即ちコバルトを該プラズマ中
に拡散し、これを換言すれば、該バッキングプレート（
１）による汚染がないもので、かくてこれを垂直とする
ことが可能であり、これを傾斜させる場合の各種の不都
合がない。尚各ターゲット（２） （３）は、エロージ
ョン領域の外側において固定されるもので、その固定手
段は従来のものと特に異ならない。In this case, each gap (4) allows the introduction of plasma ions during the sputtering operation, but the ions do not act on the backing plate (1) and the coating (
5) to diffuse the substance, namely cobalt, into the plasma, in other words, the backing plate (
There is no contamination caused by 1), and thus it can be made vertical, without the various inconveniences that would otherwise occur if it were made tilted. Each of the targets (2) and (3) is fixed outside the erosion area, and the fixing means thereof are not particularly different from conventional ones.
（作 用）
その作用を説明するに、前記した通りであり、即ちスパ
ッタリング操作に際し、プラズマイオンが各隙間（４）
内に導かれた場合、これはバッキングプレート（１）に
直接作用することなくその上面被膜（５）に作用するの
みで、該プレート（１）の物質による汚染がなく、かく
てこれを換言すれば、各隙間〈４）を特に傾斜させるこ
となく、垂直状態とすることが出来る。(Function) To explain its function, it is as described above. That is, during the sputtering operation, plasma ions flow through each gap (4).
When guided into the backing plate (1), it does not act directly on the backing plate (1), but only on its top coating (5), without contamination by substances of said plate (1), thus translating this into For example, each gap <4) can be made vertical without being particularly inclined.
（発明の効果）
このように本発明によるときは、バッキングプレートの
表面に、第１モザイクターゲットと、第２モザイクター
ゲットとの何れか一方と同質の金属又は合金から成るコ
ーティング被膜を施すもので、各モザイクターゲット間
の隙間を特に傾斜させることなしに、バッキングプレー
トによる汚染を無くし得られて製作を簡単且容易にする
ことが出来、更に該被膜は、該バッキングプレートの表
面を予め粗面とした後これに溶射その他で施されるもの
で、強固な結着状態に簡単且容易に得ることが出来る等
の効果を有する。(Effects of the Invention) According to the present invention, a coating film made of the same metal or alloy as either the first mosaic target or the second mosaic target is applied to the surface of the backing plate, It is possible to eliminate contamination caused by the backing plate without particularly sloping the gap between each mosaic target, making the production simple and easy. This is then applied by thermal spraying or other means, and has the effect of simply and easily obtaining a strong bond.
第１図は従来例の斜面図、第２図はその截断側面図、第
３図は各モザイクターゲットの加工状態の説明線図、第
４図は本発明装置の１例の斜面図、第５図はその截断側
面図である。
（１）・・・バックプレート
（７ｐ）・・・第１モザイクターゲット（３）・・・第
２モザイクターゲット
（４）・・・隙 間
（ω・・・コーティング被膜
第１図
第２図
第４図Fig. 1 is an oblique view of the conventional example, Fig. 2 is a cutaway side view thereof, Fig. 3 is an explanatory diagram of the machining state of each mosaic target, Fig. 4 is an oblique view of an example of the apparatus of the present invention, and Fig. 5 is an oblique view of the conventional example. The figure is a cutaway side view thereof. (1)...Back plate (7p)...First mosaic target (3)...Second mosaic target (4)...Gap (ω...Coating film Figure 1 Figure 2 Figure 4
Claims (1)
一方から成る第１モザイクターゲットを、その他方から
成る第２モザイクターゲットとを交互に複数個に並設す
るものにおいて、該バックプレートの表面を、予めサン
ドブラストその他で粗面に形成した後、これに前記した
２種類の金属又は合金の何れか一方から成るコーティン
グ被膜をプラズマ溶射その他により施すことを特徴とす
るモザイク式ターゲット装置。In a device in which a plurality of first mosaic targets made of one of at least two types of metals or alloys are alternately arranged in parallel with second mosaic targets made of the other metal on a back plate, the surface of the back plate is A mosaic type target device characterized in that after forming a rough surface by sandblasting or other means, a coating film made of one of the two types of metals or alloys described above is applied thereto by plasma spraying or other means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2473887A JPS63192863A (en) | 1987-02-06 | 1987-02-06 | Mosaic type target device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2473887A JPS63192863A (en) | 1987-02-06 | 1987-02-06 | Mosaic type target device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63192863A true JPS63192863A (en) | 1988-08-10 |
Family
ID=12146492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2473887A Pending JPS63192863A (en) | 1987-02-06 | 1987-02-06 | Mosaic type target device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63192863A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6045670A (en) * | 1997-01-08 | 2000-04-04 | Applied Materials, Inc. | Back sputtering shield |
| US7316763B2 (en) * | 2005-05-24 | 2008-01-08 | Applied Materials, Inc. | Multiple target tiles with complementary beveled edges forming a slanted gap therebetween |
| CN103108978A (en) * | 2010-09-28 | 2013-05-15 | 辛古勒斯技术股份公司 | Coating substrates with an alloy by means of cathode sputtering |
| CN104711530A (en) * | 2015-04-03 | 2015-06-17 | 京东方科技集团股份有限公司 | Sputtering target and magnetron sputtering film formation method thereof |
| CN108690961A (en) * | 2017-04-06 | 2018-10-23 | 北京北方华创微电子装备有限公司 | Magnetron sputtering component, magnetron sputtering chamber and magnetron sputtering apparatus |
| US10125419B2 (en) | 2011-04-21 | 2018-11-13 | View, Inc. | Lithium sputter targets |
| US10615011B2 (en) * | 2011-06-30 | 2020-04-07 | View, Inc. | Sputter target and sputtering methods |
| CN112975295A (en) * | 2021-03-04 | 2021-06-18 | 宁波江丰电子材料股份有限公司 | Preparation method of niobium target material assembly for semiconductor |
-
1987
- 1987-02-06 JP JP2473887A patent/JPS63192863A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6045670A (en) * | 1997-01-08 | 2000-04-04 | Applied Materials, Inc. | Back sputtering shield |
| US7316763B2 (en) * | 2005-05-24 | 2008-01-08 | Applied Materials, Inc. | Multiple target tiles with complementary beveled edges forming a slanted gap therebetween |
| CN103108978A (en) * | 2010-09-28 | 2013-05-15 | 辛古勒斯技术股份公司 | Coating substrates with an alloy by means of cathode sputtering |
| US20130228451A1 (en) * | 2010-09-28 | 2013-09-05 | Wolfram Maass | Coating substrates with an alloy by means of cathode sputtering |
| US9347131B2 (en) * | 2010-09-28 | 2016-05-24 | Singulus Technologies Ag. | Coating substrates with an alloy by means of cathode sputtering |
| CN103108978B (en) * | 2010-09-28 | 2016-08-31 | 辛古勒斯技术股份公司 | By means of cathodic sputtering alloy-coated base material |
| US10125419B2 (en) | 2011-04-21 | 2018-11-13 | View, Inc. | Lithium sputter targets |
| US10615011B2 (en) * | 2011-06-30 | 2020-04-07 | View, Inc. | Sputter target and sputtering methods |
| CN104711530A (en) * | 2015-04-03 | 2015-06-17 | 京东方科技集团股份有限公司 | Sputtering target and magnetron sputtering film formation method thereof |
| CN108690961A (en) * | 2017-04-06 | 2018-10-23 | 北京北方华创微电子装备有限公司 | Magnetron sputtering component, magnetron sputtering chamber and magnetron sputtering apparatus |
| CN112975295A (en) * | 2021-03-04 | 2021-06-18 | 宁波江丰电子材料股份有限公司 | Preparation method of niobium target material assembly for semiconductor |
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