JPH04333565A - Sputtering target and manufacture therefor - Google Patents
Sputtering target and manufacture thereforInfo
- Publication number
- JPH04333565A JPH04333565A JP402891A JP402891A JPH04333565A JP H04333565 A JPH04333565 A JP H04333565A JP 402891 A JP402891 A JP 402891A JP 402891 A JP402891 A JP 402891A JP H04333565 A JPH04333565 A JP H04333565A
- Authority
- JP
- Japan
- Prior art keywords
- target
- plate
- members
- joined
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000005304 joining Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 16
- 230000004927 fusion Effects 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910020707 Co—Pt Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000012254 powdered material Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、スパッタリング法によ
って薄膜を形成する際に用いられるスパッタリングター
ゲットおよびその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering target used in forming a thin film by sputtering and a method for manufacturing the same.
【０００２】0002
【従来の技術】被覆膜部材に単一金属や合金の薄膜を形
成する方法の一つとして、形成しようとする薄膜と同一
の材料を真空中にて蒸発させて被覆膜部材上に付着させ
るＰＶＤ法（物理的蒸着法）が知られている。[Background Art] One method for forming a thin film of a single metal or alloy on a coating member is to evaporate the same material as the thin film to be formed in a vacuum and adhere it to the coating member. A PVD method (physical vapor deposition method) is known.
【０００３】スパッタリング法はこのＰＶＤ法の一つで
あり、まず前記薄膜と同一の材料を板状に成形した、い
わゆるスパッタリングターゲット（以下、ターゲットと
称する。）と前記被覆膜部材とを高真空中に保持し、両
者の間にバイアスを印加するとともにイオンを導入した
り、あるいは前記ターゲット上に磁界を形成して真空中
で発生するプラズマをターゲット近傍の空間に閉じ込め
、この磁界内を運動する電子によって前記イオンを発生
させたりして、これらのイオンによってターゲットの構
成原子を弾き飛ばして、つまりスパッタして該構成原子
を前記被覆膜部材に付着させる薄膜形成法である。ここ
で、このようなスパッタリング法に用いられるターゲッ
トとしては、平面的に小さなターゲットよりも大きなも
のの方が前記イオンによってスパッタされる際の効率が
良く、またターゲットの歩留まりも高い。そこで、この
ような平面的に大きなターゲットを製造する方法として
、通常はターゲットの原料となる前記材料を粉末化した
後に焼結させて成形する、いわゆるパウダー法が用いら
れている。The sputtering method is one of the PVD methods, and first, a so-called sputtering target (hereinafter referred to as target), which is made of the same material as the thin film formed into a plate shape, and the coating film member are heated in a high vacuum. A bias is applied between the two and ions are introduced into the target, or a magnetic field is formed above the target to confine the plasma generated in vacuum in the space near the target and move within this magnetic field. This is a thin film forming method in which the ions are generated by electrons, and the constituent atoms of the target are repelled by these ions, that is, the constituent atoms are attached to the coating member by sputtering. Here, as a target used in such a sputtering method, a larger target in plan view is more efficient when sputtered by the ions and has a higher yield of the target than a smaller target in plan view. Therefore, as a method for manufacturing such a planarly large target, a so-called powder method is usually used in which the material used as the raw material for the target is powdered and then sintered and shaped.
【０００４】ところが、この方法によれば比較的大きな
一体物のターゲットを歩留まり良く製造できる反面、粉
末化した材料の充填密度をいくら上げても成形の際にタ
ーゲットに酸素が巻き込まれてしまうことは避けられな
い。このため、ターゲットの酸素含有量が高くなり、従
ってターゲットよりスパッタされて形成される薄膜も酸
素含有量の高いものとなってしまい、結果的に前記被覆
膜部材に付与されるべき機能が劣化するという問題が生
じるおそれがある。However, although this method allows relatively large integrated targets to be manufactured at a high yield, no matter how much the packing density of the powdered material is increased, oxygen will not be drawn into the target during molding. Inevitable. For this reason, the oxygen content of the target becomes high, and therefore the thin film formed by sputtering from the target also has a high oxygen content, and as a result, the function that should be imparted to the coating film member deteriorates. This may cause problems.
【０００５】このような問題を解決する手段の一つとし
て、ターゲットの成分を溶融、鋳造して板状のインゴッ
トを形成し、このインゴットを熱間圧延によって引き延
ばして平板状に成形する方法がある。しかし、例えば磁
気記録媒体に薄膜を形成する際に用いられるＣｏ−Ｐｔ
−Ｃｒ成分系の合金では、鋳造の場合は割れに対する感
受性が強いという特性があり、このため前記熱間圧延に
よってターゲットを成形することは困難とされている。One way to solve these problems is to melt and cast target components to form a plate-shaped ingot, and then hot-roll the ingot to form it into a flat plate. . However, for example, Co-Pt, which is used when forming thin films on magnetic recording media,
-Cr alloys have a characteristic of being highly susceptible to cracking when cast, and for this reason it is difficult to form a target by hot rolling.
【０００６】そこで、このような合金のターゲットの製
造方法で比較的大面積のターゲットを作る場合には、前
記成分系の合金インゴットをスライス切断して複数の板
状部材を成形し、これらの板状部材の端面同士を突き合
わせてターゲットを構成する方法が採られている。Therefore, when making a relatively large-area target using such an alloy target manufacturing method, an alloy ingot of the above-mentioned composition system is cut into slices to form a plurality of plate-shaped members, and these plates are then cut into slices. A method has been adopted in which a target is constructed by butting the end surfaces of shaped members against each other.
【０００７】図６はこのような方法によって製造された
ターゲットの一例であるが、この例でターゲット１は、
前記インゴットをスライス切断して得られた平面視に四
角形の板状部材２が、３枚一列に接合されて構成されて
いる。図７はこのターゲット１の隣合う一対の板状部材
２Ａ，２Ｂの接合部３の側面図であるが、この図に示さ
れるように板状部材２Ａ，２Ｂの互いに対向する端面４
Ａ，４Ｂには、一方の板状部材２Ａの端面４Ａの下縁に
当該ターゲット１の幅方向に沿う断面長方形状の突条５
Ａが、他方の板状部材２Ｂの端面４Ｂの上縁にやはり前
記幅方向に沿う断面が略正方形状の突条５Ｂが、それぞ
れ形成されている。そして、端面４Ａ，４Ｂを互いに突
き合わせて突条５Ａを端面４Ｂに、突条５Ｂを端面４Ａ
に、それぞれ当接せしめることにより、突条５Ａ，５Ｂ
が重ね合わされ、さらに銅製のバッキングプレート６に
ハンダ接合されて保持される。FIG. 6 shows an example of a target manufactured by such a method. In this example, target 1 is
Three plate-like members 2, which are rectangular in plan view and are obtained by slicing the ingot, are joined in a row. FIG. 7 is a side view of the joint 3 of the pair of adjacent plate members 2A, 2B of this target 1, and as shown in this figure, the mutually opposing end surfaces 4 of the plate members 2A, 2B
A, 4B includes a protrusion 5 having a rectangular cross section along the width direction of the target 1 on the lower edge of the end surface 4A of one plate member 2A.
On the upper edge of the end surface 4B of the other plate member 2B, a protrusion 5B having a substantially square cross section along the width direction is formed. Then, the end surfaces 4A and 4B are butted against each other, and the protrusion 5A is placed on the end surface 4B, and the protrusion 5B is placed on the end surface 4A.
By bringing them into contact with each other, the protrusions 5A and 5B
are stacked on top of each other and are further soldered and held on a copper backing plate 6.
【０００８】この方法では、インゴットはスライス切断
されてターゲットに成形されるから直方体に近い形状の
小型のインゴットを製造すればよく、原料投入量が少な
くてすむとともに、インゴット鋳造のための溶解設備も
小型ですみ、特にターゲットの成分系に貴金属が多く含
まれる場合に経済的な効果が大きいという利点を有する
。[0008] In this method, the ingot is cut into slices and formed into targets, so it is only necessary to manufacture small ingots with a shape close to a rectangular parallelepiped, and the amount of raw material input is small, and the melting equipment for ingot casting is also required. It has the advantage of being small in size and having a large economical effect, especially when the target component system contains a large amount of precious metals.
【０００９】[0009]
【発明が解決しようとする課題】ところで、スパッタリ
ングが進行してターゲット構成原子が弾き飛ばされるに
伴ってターゲットはその上面から徐々に消耗して薄くな
ってゆくが、前記構成のターゲットではターゲットの厚
さが前記一方の突条５Ａの厚さと等しくなったところで
、すなわち接合部３において他方の突条５Ｂの部分がス
パッタされて消耗した時点でスパッタリングを中断し、
ターゲットを交換しなければならない。さもなくば、一
方の板状部材２Ａの突条５Ａと他方の板状部材２Ｂの端
面４Ｂとの僅かな間隙から前記イオンが侵入し、ターゲ
ット構成原子ではなくバッキングプレート６を構成する
銅原子をスパッタしてしまい、これが前記被覆膜部材に
付着して薄膜の純度を劣化せしめ、引いては被覆膜部材
の機能を損なうおそれがあるためである。このように前
記構成のターゲットでは、ターゲットの使用可能な厚さ
が制限されることは避けられず、結果的にターゲットの
歩留まりが低下することは免れなかった。[Problems to be Solved by the Invention] By the way, as sputtering progresses and atoms constituting the target are repelled, the target gradually wears away from its upper surface and becomes thinner. The sputtering is stopped when the thickness of the protrusion 5A becomes equal to the thickness of the one protrusion 5A, that is, when the portion of the other protrusion 5B is sputtered and consumed at the joint portion 3,
Target must be replaced. Otherwise, the ions will enter through the slight gap between the protrusion 5A of one plate-like member 2A and the end surface 4B of the other plate-like member 2B, and the copper atoms constituting the backing plate 6 instead of the atoms constituting the target will be absorbed. This is because sputtering may adhere to the coating member, deteriorating the purity of the thin film, and possibly impairing the function of the coating member. As described above, in the target having the above structure, it is inevitable that the usable thickness of the target is limited, and as a result, the yield of the target is inevitably reduced.
【００１０】0010
【課題を解決するための手段】本発明は前記の課題を解
決するためになされたもので、本発明の請求項１は、複
数の板状部材の端面を接合して形成される平板状のスパ
ッタリングターゲットであって、互いに隣合う前記板状
部材の端面同士を融着により接合したことを特徴とする
ものである。[Means for Solving the Problems] The present invention has been made to solve the above-mentioned problems, and claim 1 of the present invention provides a flat plate-shaped member formed by joining end surfaces of a plurality of plate-shaped members. The sputtering target is characterized in that the end surfaces of the plate-like members adjacent to each other are joined by fusion.
【００１１】また本発明の請求項２は、複数の板状部材
の端面を接合して平板状に成形するスパッタリングター
ゲットの製造方法において、互いに隣合って接合される
前記板状部材の端面同士を、融着により接合することを
特徴とする。A second aspect of the present invention is a method for manufacturing a sputtering target in which the end faces of a plurality of plate members are joined to form a flat plate, in which the end faces of the plate members that are joined adjacent to each other are joined together. , is characterized by being joined by fusion.
【００１２】なお、ここでいう融着とは前記板状部材自
体を溶融して接着することはもとより、板状部材の端面
同士の間にターゲット構成材料と同じ材料を溶融して流
し込み、これによって板状部材を接着する手法をも含む
ものである。[0012] The fusion referred to here does not only mean melting and bonding the plate-like members themselves, but also melting and pouring the same material as the target constituent material between the end faces of the plate-like members, thereby It also includes a method of bonding plate-like members.
【００１３】[0013]
【作用】本発明によれば、ターゲットを構成する複数の
板状部材は互いに融着されて接合されているため、ター
ゲットの厚さ方向に間隙が生じることはない。従ってタ
ーゲットを下面までスパッタしてもバッキングプレート
が露出するまではバッキングプレートの構成原子がスパ
ッタされることはなく、よってターゲットの使用可能厚
さが制限を受けることもない。According to the present invention, since the plurality of plate-like members constituting the target are fused and joined to each other, there is no gap in the thickness direction of the target. Therefore, even if the target is sputtered to the lower surface, atoms constituting the backing plate will not be sputtered until the backing plate is exposed, and therefore the usable thickness of the target is not limited.
【００１４】[0014]
【実施例】図１は本発明の一実施例を示す斜視図であり
、図６と同じ部分には同一の符号を配してある。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a perspective view showing an embodiment of the present invention, and the same parts as in FIG. 6 are designated by the same reference numerals.
【００１５】本実施例のターゲット１１は、１２ａｔ％
のＰｔと９ａｔ％のＣｒとを含有するＣｏ−Ｐｔ−Ｃｒ
合金製のターゲットであり、前記従来例と同様、板状部
材１２が３枚一列に接合されてバッキングプレート６に
載置された構成となっている。なお、ターゲット１１と
バッキングプレート６とはハンダ接合されている。The target 11 of this embodiment has a concentration of 12 at%
Co-Pt-Cr containing 9 at% of Pt and 9 at% of Cr
The target is made of an alloy, and has a structure in which three plate members 12 are joined in a row and placed on the backing plate 6, similar to the conventional example. Note that the target 11 and the backing plate 6 are soldered together.
【００１６】図２は本実施例の互いに隣合って接合され
る一対の板状部材１２Ａ，１２Ｂの接合部１３の側面図
である。この図に示されるように前記一対の板状部材１
２Ａ，１２Ｂの端面１４Ａ，１４Ｂは、板状部材１２Ａ
，１２Ｂの上下面に垂直な平面に成形されている。そし
て、これらの端面１４Ａ，１４Ｂは互いに突き合わされ
た状態で融着されており、これによって板状部材１２Ａ
，１２Ｂは接合されている。FIG. 2 is a side view of the joint portion 13 of the pair of plate members 12A, 12B which are joined adjacent to each other in this embodiment. As shown in this figure, the pair of plate members 1
The end surfaces 14A, 14B of 2A, 12B are plate-shaped members 12A.
, 12B. These end surfaces 14A and 14B are butted against each other and fused together, thereby forming the plate member 12A.
, 12B are joined.
【００１７】このようなターゲット１１を製造するには
、まず所定量のＣｏ、Ｐｔ、Ｃｒを熔融して図３に示す
ようなインゴット１５を鋳造し、このインゴット１５を
図４に示すようにスライス切断して３枚の板状部材１２
を成形する。なお、符号１６は前記インゴット１５の鋳
造の際に凹みの生じた部分であり、ターゲットとして使
用するには不適であるので再度熔融されて製造に供され
る。To manufacture such a target 11, first, a predetermined amount of Co, Pt, and Cr is melted to cast an ingot 15 as shown in FIG. 3, and this ingot 15 is sliced as shown in FIG. Cut into three plate-like members 12
to form. Incidentally, reference numeral 16 indicates a portion where a dent was formed during casting of the ingot 15, and since it is unsuitable for use as a target, it is melted again and used for manufacturing.
【００１８】しかる後、互いに隣合う一対の板状部材１
２Ａ，１２Ｂを前記端面１４Ａ，１４Ｂを突き合わせて
一列に配列し、この突き合わせ部を電子ビーム溶接等の
手段によって加熱、熔融せしめて接着、すなわち融着す
ることにより、該板状部材１２Ａ，１２Ｂは接合されて
平板状に成形される。次いで、接合された板状部材１２
の表面に機械加工により仕上げを施した後、銅製のバッ
キングプレート６をハンダによって接合することにより
、図１に示した本実施例のターゲット１１が製造される
。After that, a pair of adjacent plate members 1
2A and 12B are arranged in a line with their end surfaces 14A and 14B abutted against each other, and the abutted portions are heated and melted by means such as electron beam welding to be bonded, that is, fused, to form plate-like members 12A and 12B. They are joined and formed into a flat plate. Next, the joined plate member 12
After finishing the surface by machining, the target 11 of this embodiment shown in FIG. 1 is manufactured by joining the copper backing plate 6 with solder.
【００１９】こうして製造される本実施例のターゲット
１１では、接合部１３において両方の板状部材１２Ａ，
１２Ｂの端面１４Ａ，１４Ｂが熔融して融合した状態と
なっており、これにより端面１４Ａ，１４Ｂの間に僅か
な間隙も形成されることはない。従ってターゲット１１
の下面までスパッタが進行しても、ターゲット１１が消
耗し尽くされてバッキングプレート６が露出するまでは
スパッタリングを続行することができる。すなわち前記
構成のターゲットでは、従来のようにターゲットの使用
可能な厚さに制限を受けることなく、ターゲット下面ま
で使用に供することができるため、ターゲットの歩留ま
りの向上を図ることが可能となる。In the target 11 of this embodiment manufactured in this manner, both plate members 12A,
The end faces 14A and 14B of the end face 12B are melted and fused together, so that not even the slightest gap is formed between the end faces 14A and 14B. Therefore target 11
Even if the sputtering progresses to the lower surface of the target 11, the sputtering can be continued until the target 11 is completely consumed and the backing plate 6 is exposed. That is, in the target having the above structure, the lower surface of the target can be used without being limited by the usable thickness of the target as in the conventional case, so that it is possible to improve the yield of the target.
【００２０】また、板状部材１２の端面１４Ａ，１４Ｂ
は平面状に成形すればよく、また該端面１４Ａ，１４Ｂ
は融着されて接合されるから、その仕上げ精度も厳密に
する必要はない。このように本実施例は前記従来例に比
べて板状部材の成形が容易であるという利点をも有する
。[0020] Also, the end faces 14A, 14B of the plate member 12
may be formed into a flat shape, and the end surfaces 14A, 14B
Since they are fused and joined, there is no need for strict finishing accuracy. As described above, this embodiment also has the advantage that the plate-like member can be easily molded compared to the conventional example.
【００２１】なお前記実施例では、隣合う板状部材１２
Ａ，１２Ｂの端面１４Ａ，１４Ｂを板状部材１２Ａ，１
２Ｂの上下面に垂直な平面に成形し、接合部１３にてこ
れらの端面１４Ａ，１４Ｂを突き合わせて融着して両方
の板状部材１２Ａ，１２Ｂを接合したが、本発明はこの
実施例のみに限定されるものではない。[0021] In the above embodiment, the adjacent plate members 12
The end surfaces 14A, 14B of A, 12B are plate-shaped members 12A, 1
2B into a plane perpendicular to the upper and lower surfaces, and the end surfaces 14A, 14B are butted and fused at the joint 13 to join both the plate members 12A, 12B, but the present invention is limited to this embodiment. It is not limited to.
【００２２】例えば図５は本発明の他の実施例を示す接
合部の側面図であるが、この実施例では、互いに隣合っ
て接合される一対の板状部材２２Ａ，２２Ｂの端面２４
Ａ，２４Ｂをともにターゲットの上面から下面に向かう
に従って広がる傾斜面に成形されている。そして、接合
部にてこれらの端面２４Ａ，２４Ｂを突き合わせて形成
されるＶ字型の溝部に、当該ターゲットと同じ成分系の
溶融合金２５を流し込むことにより、この溶融合金２５
が両方の端面２４Ａ，２４Ｂに融着して板状部材２２Ａ
，２２Ｂが接合される。こうして平板状に成形されたタ
ーゲットは前記実施例同様、機械加工によって仕上げら
れた上でバッキングプレート６に接合される。For example, FIG. 5 is a side view of a joint section showing another embodiment of the present invention.
Both A and 24B are formed into inclined surfaces that widen from the upper surface to the lower surface of the target. Then, by pouring the molten alloy 25 having the same composition as the target into the V-shaped groove formed by butting these end surfaces 24A and 24B at the joint, the molten alloy 25
is fused to both end surfaces 24A and 24B to form a plate member 22A.
, 22B are joined. The target thus formed into a flat plate shape is finished by machining and then joined to the backing plate 6, as in the previous embodiment.
【００２３】このように、本実施例では隣合う一対の板
状部材２２Ａ，２２Ｂは、それぞれの端面２４Ａ，２４
Ｂ間に介装される溶融合金２５によって融着されており
、両板状部材２２Ａ，２２Ｂの接合部に間隙が形成され
ることがないために、前記実施例と同様の効果を得るこ
とができる。As described above, in this embodiment, the pair of adjacent plate members 22A, 22B have their respective end faces 24A, 24
Since the molten alloy 25 interposed between the two plate members 22A and 22B is fused and no gap is formed at the joint between the two plate members 22A and 22B, the same effect as in the above embodiment can be obtained. can.
【００２４】[0024]
【発明の効果】以上説明したように本発明によれば、隣
合う一対の板状部材は互いの端面を突き合わせた状態で
融着されて接合されているので、接合部において間隙が
形成されることはなく、従ってターゲットの使用可能な
厚さに制限を受けることなくバッキングプレートが露出
するまでスパッタを行うことができる。すなわち、ター
ゲットを下面まで用い尽くすことが可能となり、ターゲ
ットの歩留まりの向上を図ることができる。[Effects of the Invention] As explained above, according to the present invention, since a pair of adjacent plate members are fused and joined with their end surfaces abutting each other, a gap is formed at the joint. Therefore, sputtering can be performed until the backing plate is exposed without being limited by the usable thickness of the target. That is, it becomes possible to use up the target to the bottom surface, and it is possible to improve the yield of the target.
【図１】本発明の一実施例を示す斜視図である。FIG. 1 is a perspective view showing one embodiment of the present invention.
【図２】図１の実施例の接合部１３の側面図である。FIG. 2 is a side view of the joint 13 of the embodiment of FIG. 1;
【図３】本発明に係わるＣｏ−Ｐｔ−Ｃｒ合金のインゴ
ット１５の斜視図である。FIG. 3 is a perspective view of a Co-Pt-Cr alloy ingot 15 according to the present invention.
【図４】図３のインゴット１５をスライス切断した図で
ある。FIG. 4 is a diagram of the ingot 15 of FIG. 3 cut into slices.
【図５】本発明の他の実施例を示す接合部の側面図であ
る。FIG. 5 is a side view of a joint section showing another embodiment of the present invention.
【図６】従来の構造のスパッタリングターゲットの斜視
図である。FIG. 6 is a perspective view of a sputtering target with a conventional structure.
【図７】図６のスパッタリングターゲットの接合部の側
面図である。FIG. 7 is a side view of a joint of the sputtering target of FIG. 6;
１，１１ スパッタリングターゲット２，１２，１２
Ａ，１２Ｂ，２２Ａ，２２Ｂ 板状部材３，１３
接合部
４Ａ，４Ｂ，１４Ａ，１４Ｂ，２４Ａ，２４Ｂ 板状
部材の端面
６ バッキングプレート
２５ 溶融合金1, 11 Sputtering target 2, 12, 12
A, 12B, 22A, 22B Plate member 3, 13
Joint portions 4A, 4B, 14A, 14B, 24A, 24B End face 6 of plate member Backing plate 25 Molten alloy
Claims (2)
される平板状のスパッタリングターゲットであって、互
いに隣合う前記板状部材の端面同士が融着により接合さ
れていることを特徴とするスパッタリングターゲット。1. A flat sputtering target formed by joining the end faces of a plurality of plate-like members, characterized in that the end faces of the adjacent plate-like members are joined by fusion bonding. sputtering target.
状に成形するスパッタリングターゲットの製造方法にお
いて、互いに隣合って接合される前記板状部材の端面同
士を、融着により接合することを特徴とするスパッタリ
ングターゲットの製造方法。2. A method for manufacturing a sputtering target in which end faces of a plurality of plate members are joined to form a flat plate, the end faces of the plate members being joined adjacent to each other are joined by fusion bonding. A method for manufacturing a sputtering target characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP402891A JPH04333565A (en) | 1991-01-17 | 1991-01-17 | Sputtering target and manufacture therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP402891A JPH04333565A (en) | 1991-01-17 | 1991-01-17 | Sputtering target and manufacture therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04333565A true JPH04333565A (en) | 1992-11-20 |
Family
ID=11573510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP402891A Pending JPH04333565A (en) | 1991-01-17 | 1991-01-17 | Sputtering target and manufacture therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04333565A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5466355A (en) * | 1993-07-15 | 1995-11-14 | Japan Energy Corporation | Mosaic target |
| WO2004090194A1 (en) * | 2003-04-03 | 2004-10-21 | Kobelco Research Institute, Inc. | Sputtering target and method for preparation thereof |
| JP2005015915A (en) * | 2003-06-05 | 2005-01-20 | Showa Denko Kk | Sputtering target, and its production method |
| WO2005059198A1 (en) * | 2003-12-18 | 2005-06-30 | Mitsui Mining & Smelting Co.,Ltd. | Aluminum base target and process for producing the same |
| EP2316595A1 (en) * | 2005-10-20 | 2011-05-04 | H. C. Starck Inc | Methods of making molybdenum titanium sputtering plates and targets |
| WO2012066810A1 (en) * | 2010-11-19 | 2012-05-24 | Jx日鉱日石金属株式会社 | Ito sputtering target |
| US8449818B2 (en) | 2010-06-30 | 2013-05-28 | H. C. Starck, Inc. | Molybdenum containing targets |
| US8449817B2 (en) | 2010-06-30 | 2013-05-28 | H.C. Stark, Inc. | Molybdenum-containing targets comprising three metal elements |
| US9334562B2 (en) | 2011-05-10 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target and associated methods and articles |
| US9334565B2 (en) | 2012-05-09 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
-
1991
- 1991-01-17 JP JP402891A patent/JPH04333565A/en active Pending
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5466355A (en) * | 1993-07-15 | 1995-11-14 | Japan Energy Corporation | Mosaic target |
| WO2004090194A1 (en) * | 2003-04-03 | 2004-10-21 | Kobelco Research Institute, Inc. | Sputtering target and method for preparation thereof |
| JP2005015915A (en) * | 2003-06-05 | 2005-01-20 | Showa Denko Kk | Sputtering target, and its production method |
| WO2005059198A1 (en) * | 2003-12-18 | 2005-06-30 | Mitsui Mining & Smelting Co.,Ltd. | Aluminum base target and process for producing the same |
| KR100762815B1 (en) * | 2003-12-18 | 2007-10-02 | 미쓰이 긴조꾸 고교 가부시키가이샤 | Aluminum base target |
| EP2316595A1 (en) * | 2005-10-20 | 2011-05-04 | H. C. Starck Inc | Methods of making molybdenum titanium sputtering plates and targets |
| US8911528B2 (en) | 2005-10-20 | 2014-12-16 | H.C. Starck Inc. | Methods of making molybdenum titanium sputtering plates and targets |
| US8449818B2 (en) | 2010-06-30 | 2013-05-28 | H. C. Starck, Inc. | Molybdenum containing targets |
| US8449817B2 (en) | 2010-06-30 | 2013-05-28 | H.C. Stark, Inc. | Molybdenum-containing targets comprising three metal elements |
| US9017762B2 (en) | 2010-06-30 | 2015-04-28 | H.C. Starck, Inc. | Method of making molybdenum-containing targets comprising three metal elements |
| US9150955B2 (en) | 2010-06-30 | 2015-10-06 | H.C. Starck Inc. | Method of making molybdenum containing targets comprising molybdenum, titanium, and tantalum or chromium |
| US9837253B2 (en) | 2010-06-30 | 2017-12-05 | H.C. Starck Inc. | Molybdenum containing targets for touch screen device |
| US9945023B2 (en) | 2010-06-30 | 2018-04-17 | H.C. Starck, Inc. | Touch screen device comprising Mo-based film layer and methods thereof |
| CN102906301A (en) * | 2010-11-19 | 2013-01-30 | 吉坤日矿日石金属株式会社 | Ito sputtering target |
| JP5410545B2 (en) * | 2010-11-19 | 2014-02-05 | Ｊｘ日鉱日石金属株式会社 | ITO sputtering target |
| WO2012066810A1 (en) * | 2010-11-19 | 2012-05-24 | Jx日鉱日石金属株式会社 | Ito sputtering target |
| US9334562B2 (en) | 2011-05-10 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target and associated methods and articles |
| US9334565B2 (en) | 2012-05-09 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
| US10643827B2 (en) | 2012-05-09 | 2020-05-05 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
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