JPS63168602A - Preparation of thin optical dielectric film - Google Patents
Preparation of thin optical dielectric filmInfo
- Publication number
- JPS63168602A JPS63168602A JP62001508A JP150887A JPS63168602A JP S63168602 A JPS63168602 A JP S63168602A JP 62001508 A JP62001508 A JP 62001508A JP 150887 A JP150887 A JP 150887A JP S63168602 A JPS63168602 A JP S63168602A
- Authority
- JP
- Japan
- Prior art keywords
- interference filter
- treatment
- refractive index
- dielectric
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims description 13
- 239000003989 dielectric material Substances 0.000 claims abstract description 10
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims description 32
- 239000010408 film Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 13
- 239000012298 atmosphere Substances 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 7
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 4
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011521 glass Substances 0.000 abstract description 2
- 239000005051 trimethylchlorosilane Substances 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000007872 degassing Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 125000001183 hydrocarbyl group Chemical group 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 238000007735 ion beam assisted deposition Methods 0.000 description 3
- 229930195734 saturated hydrocarbon Natural products 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000001165 hydrophobic group Chemical group 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- -1 oxygen ions Chemical class 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical group 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical group C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Optical Filters (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〈発明の技術分野〉
本発明は、干渉フィルター等として使用されろ誘電体光
学薄膜の作製方法に関し、特に耐候性に優れ、経時変化
のない干渉フィルター等を得るｆ二めの誘１ｕ体光学薄
膜の作製方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a method for producing a dielectric optical thin film used as an interference filter, and particularly to a method for producing an interference filter that has excellent weather resistance and does not change over time. The present invention relates to a method for producing a diluent optical thin film.
〈従来技術〉
誘電体光学薄膜は、反射防止膜を初めとして色分離フィ
ルター、偏光フィルター、各種ミラー、光減衰４等多岐
にわたって利用されている。これら誘電体光学薄膜は、
真空蒸着法により容易に形成できるが、耐候性に乏しく
、特に吸湿による経時変化が素子性能を低下させる原因
となっており、その改存が強く望まれている。<Prior Art> Dielectric optical thin films are used in a wide variety of applications, including antireflection films, color separation filters, polarizing filters, various mirrors, and light attenuation films. These dielectric optical thin films are
Although it can be easily formed using a vacuum evaporation method, it has poor weather resistance, and changes over time, especially due to moisture absorption, are a cause of deteriorating device performance, and its modification is strongly desired.
従来行なわれている吸湿性改善の代表的な試みには、以
下の（イ）（ロ）があるが、素子の経時変化を解決する
ことには成功していない。Typical attempts to improve hygroscopicity that have been made in the past include the following (a) and (b), but they have not succeeded in solving the aging problem of the element.
（イ）第１の方法は、誘電体薄膜を形成した後、該誘′
１体薄膜上に保護膜を形成するものであり、誘電体薄膜
と外部環境との接触を防ぐことを目的としている。(a) The first method is to form a dielectric thin film and then
A protective film is formed on a single thin film, and its purpose is to prevent contact between the dielectric thin film and the external environment.
上記保護膜としては、ＳｉＯ等単−誘眉体物質、又はＴ
ａ ＯｓとＡＩＯ，等の混合誘電体物質から成るｍ層
薄膜、又はＳｉＯ，５ｉＯｚ等異種誘電体物質の交互の
積層膜から成る多層薄膜、あるいはエボキン等透明高分
子薄膜等が試みられているが、いずれもピンホール等の
欠陥を避けることはてきないため、経時変化を抑えるこ
とは困難である。The above-mentioned protective film may be made of a monodioxide material such as SiO, or T
M-layer thin films made of mixed dielectric materials such as aOs and AIO, multilayer thin films made of alternately laminated films of different dielectric materials such as SiO and 5iOz, and transparent polymer thin films such as Evokin have been attempted. In both cases, defects such as pinholes cannot be avoided, so it is difficult to suppress changes over time.
（ロ）第２の方法は、誘電体薄膜形成時に、酸素イオン
、アルゴンイオン等のイオンビームを照射ずろことによ
り薄膜の高充填密度化を図り、吸湿を抑えようとするも
のである（イオンビームアシスト蒸着法＝ＩＡＤ法）。(b) The second method is to increase the packing density of the thin film by staggered irradiation with ion beams such as oxygen ions and argon ions when forming the dielectric thin film, and to suppress moisture absorption (ion beam Assisted vapor deposition method = IAD method).
この方法では薄膜内の吸着点を不活化し、経時変化速
度を遅くすることはできるが、水分子の吸着は避けられ
ないため、本質的な経時変化の改善は望めない。Although this method can inactivate the adsorption points within the thin film and slow down the rate of change over time, it cannot be expected to substantially improve the change over time because adsorption of water molecules is unavoidable.
〈発明の目的〉
本発明は、上記従来技術の欠点を解決すること、具体的
には経時変化を抑止すると共に、低価格、大量処理を可
能にする誘電体光学薄膜の作製方法を堤供するものであ
る。<Objective of the Invention> The present invention aims to solve the above-mentioned drawbacks of the prior art, and specifically provides a method for producing a dielectric optical thin film that suppresses deterioration over time and enables mass processing at low cost. It is.
〈発明の構成〉
上記目的を達成するため、本発明に係る誘電体光学薄膜
の作製方法は真空蒸着法等により、単一誘電体物質から
成る誘電体薄膜、あるいは低屈折率誘電体物質と高屈折
率誘電体物質の交互の積層膜から成る誘電体薄膜を形成
した後、該誘電体薄膜に対し疎水化処理を行なうことを
特徴としている。<Structure of the Invention> In order to achieve the above object, the method for producing a dielectric optical thin film according to the present invention uses a vacuum evaporation method or the like to produce a dielectric thin film made of a single dielectric material, or a dielectric thin film made of a low refractive index dielectric material and a high refractive index dielectric material. The method is characterized in that after forming a dielectric thin film consisting of alternating laminated films of refractive index dielectric materials, the dielectric thin film is subjected to hydrophobization treatment.
〈発明の実施例〉
以下、本発明を実施例に基づき図面を参照して詳細に説
明する。<Embodiments of the Invention> The present invention will now be described in detail based on embodiments with reference to the drawings.
本実施例により作製した誘電体薄膜は、第１図に示すご
とく低屈折率物質である５ｉｏｔ、及び高屈折率物質で
あるＴｉ１ｔの交互積層により構成されるλ／４膜１膜
層０層ングルハーフウェーブ型（ＳＨＷ型）干渉フィル
タ（以下干渉フィルタと呼ぶ）である。誘電体薄膜は電
子ビーム蒸着装置を用い、基盤温度３００℃、酸素分圧
２×１０ノＴ ｏｒｒの雰囲気中でガラス基板上に形成
した。As shown in Fig. 1, the dielectric thin film produced in this example is a λ/4 film, 1 layer, and 0 layers consisting of alternating layers of 5iot, a low refractive index material, and Ti1t, a high refractive index material. This is a half-wave type (SHW type) interference filter (hereinafter referred to as an interference filter). The dielectric thin film was formed on a glass substrate using an electron beam evaporation apparatus in an atmosphere with a substrate temperature of 300° C. and an oxygen partial pressure of 2×10 Torr.
この干渉フィルターは、第２図に示すような形成直後の
分光特性を有し、６００〜Ｉ０００ｎｍの波長範囲で１
つの透過ピーク（以下メインピークと呼ぶ）をもつもの
である。This interference filter has the spectral characteristics immediately after formation as shown in Figure 2, and has a wavelength range of 100 nm to 1000 nm.
It has two transmission peaks (hereinafter referred to as main peaks).
第３図は、干渉フィルタを大気中に取り出した後のメイ
ンピーク波長（透過ピーク最大透過率を与える波長）の
経時変化を示している。干渉フィルタを大気中に取り出
した直後にピーク位置が大きく変化し、その後時間と共
に緩やかにピーク位置が変化している。干渉フィルタを
大気中に取り出した直後に起こる大きなピークシフトの
原因は、主に構成膜表面への水酸基（−ＯＨ）の結合に
よるものであり、その後に起こる緩やかなピークシフト
は結合した水酸基（−０Ｈ）に大気中の水（Ｈ，Ｏ）Ｅ
が水素結合により吸着することによって起こるものと考
えられる。FIG. 3 shows the change over time in the main peak wavelength (the wavelength that gives the maximum transmittance at the transmission peak) after the interference filter is taken out into the atmosphere. The peak position changes significantly immediately after the interference filter is taken out into the atmosphere, and then changes gradually over time. The cause of the large peak shift that occurs immediately after the interference filter is taken out into the atmosphere is mainly due to the bonding of hydroxyl groups (-OH) to the surface of the constituent membranes, and the gradual peak shift that occurs thereafter is due to the bonding of the hydroxyl groups (-OH) to the surface of the constituent membranes. 0H) in the atmosphere (H,O)E
This is thought to be caused by the adsorption of hydrogen bonds through hydrogen bonding.
本発明ではこのような経時変化を防止するために疎水化
処理を施すものであるが、疎水化処理を行なうに先立ち
、上記干渉フィルタを、ｌＸｌ０３Ｔｏｒｒ以下の真空
中で４６０℃で１時間の脱気処理を行なった。この脱気
処理を行なうことにより、干渉フィルタに吸着した水（
Ｈ，Ｏ）をほぼ完全に取り除くことができる。In the present invention, hydrophobization treatment is performed to prevent such changes over time. Prior to hydrophobization treatment, the interference filter is degassed at 460° C. for 1 hour in a vacuum of 1X103 Torr or less. processed. By performing this deaeration process, the water (
H, O) can be almost completely removed.
第４図は、脱気処理のみを行なった誘電体多層膜のピー
クシフトの様子を時間軸に対して示したものである。ピ
ーク位置か時間に対して緩やかに変化しており、脱気処
理後の表面に再び水が吸着する過程を表わしている。FIG. 4 shows the peak shift of a dielectric multilayer film subjected to only degassing treatment with respect to the time axis. The peak position changes slowly over time, indicating the process in which water is adsorbed again to the surface after degassing.
次に、脱気処理を施した干渉フィルタを４％トリメチル
クロロシラン（（ＣＨ３）３Ｓ ｉＣｌ）−クロロホル
ム溶液に１８．５時間浸す事により干渉フィルタの疎水
化処理を行なった。Next, the interference filter subjected to the deaeration treatment was immersed in a 4% trimethylchlorosilane ((CH3)3SiCl)-chloroform solution for 18.5 hours to perform hydrophobization treatment on the interference filter.
嘲
＝Ｓｉ−０１１＋ （ＣＨ３）、５ｉＣＩ−４＝Ｓｉ
−０−３ｉ−ＣＩ３＋ ＭＣＩＣＨ３
疎水化処理は、上式に従って反応か起こり、干渉フィル
タに結合した水酸基（−０Ｉ−１）のＩ］が疎水性基（
（ｃ Ｈ３）３ Ｓ ｉ−）に置換される。Mockery=Si-011+ (CH3), 5iCI-4=Si
-0-3i-CI3+ MCICH3 In the hydrophobization treatment, a reaction occurs according to the above formula, and the hydroxyl group (-0I-1) bound to the interference filter is converted into a hydrophobic group (
(cH3)3S i-).
第５図に脱気処理を施した後、疎水化処理を施した干渉
フィルタのピーク位置の変化の様子を示す。形成直後に
比べて大きく変化していたピーク位置が、上記処理を行
なうことにより、形成直後のピークとほぼ等しい位置に
戻り、処理後は全くピークの移動が生じなかった。FIG. 5 shows how the peak position of the interference filter changes after being subjected to deaeration treatment and hydrophobization treatment. The peak position, which had changed significantly compared to immediately after formation, returned to a position approximately equal to the peak immediately after formation by performing the above treatment, and no peak movement occurred after the treatment.
なお、誘電体薄膜が水と接しない状態、例えば窒素雰囲
気中等で疎水化処理を行う場合には脱気処理を行わなく
とも同様な効果を得ることができる。又、脱気処理は誘
電体層表面の吸着水を除去する為のものであり、その方
法は真空加熱に限らず不活性ガス雰囲気中での加熱等吸
着水を除去できる方法であればいずれの方法でもよい。Note that when the hydrophobization treatment is performed in a state where the dielectric thin film does not come into contact with water, for example in a nitrogen atmosphere, the same effect can be obtained without performing the degassing treatment. In addition, degassing treatment is to remove adsorbed water on the surface of the dielectric layer, and the method is not limited to vacuum heating, but any method that can remove adsorbed water, such as heating in an inert gas atmosphere, can be used. It may be a method.
疎水性基は、実施例で述べたトリメチルシラン基に限ら
ず
（Ｒ）ｍ−＋ −Ｍ−の構造の化合物基であればよい。The hydrophobic group is not limited to the trimethylsilane group described in the examples, but may be any compound group having the structure (R)m-+-M-.
ここで、ＲはＣＨ３−、Ｃ２Ｈ４−等ＣｎＨｔｎ＋ｌ−
で表される飽和炭化水素基であり、ＭはＳｉ、Ｔｉ、Ｓ
ｎ等の３価または４価の元素である。ここでｍはＭの価
数を表わしている。又、（Ｒ）ｍ−、−は同一飽和炭化
水素基からなる場合でも、異種飽和炭化水素基からなる
場合でら実施例と同様の効果を得ることができる。Here, R is CH3-, C2H4-, etc.CnHtn+l-
is a saturated hydrocarbon group represented by, M is Si, Ti, S
It is a trivalent or tetravalent element such as n. Here, m represents the valence of M. Furthermore, even when (R)m- and - are composed of the same saturated hydrocarbon group, the same effects as in the examples can be obtained whether they are composed of different saturated hydrocarbon groups.
〈発明の効果〉
以上のように、本発明の誘電体光学薄膜の作製方法を用
いれば、設計値通りの光学的特性をもち、経時変化のな
い、誘電体光学薄膜を得ることができる。<Effects of the Invention> As described above, by using the method for producing a dielectric optical thin film of the present invention, it is possible to obtain a dielectric optical thin film that has optical properties as designed and does not change over time.
さらに、イオンビームアシスト蒸着（ＩＡＤ）法のよう
に高価なイオンΔ１スを用いろ必要がなく、又、蒸着中
に特別な処理を施す必要がないため、誘電体薄膜形成は
従来法により行なうことができる。Furthermore, since there is no need to use expensive ion Δ1 as in the ion beam assisted deposition (IAD) method, and there is no need for special treatment during deposition, the dielectric thin film can be formed using conventional methods. I can do it.
更に、脱気処理、及び疎水化処理は一度に人里に行なえ
るため、誘電体光学薄膜作製の低コスト化を図ることが
できる。Further, since the degassing treatment and the hydrophobization treatment can be performed in a remote location at the same time, it is possible to reduce the cost of producing the dielectric optical thin film.
第１図は、本実施例に使用した１０層の誘電体多層膜Ｓ
ＨＷ型干渉フィルターの構成図、第２図は、第１図に示
した１０層の誘電体多層膜ＳＨＷ型干渉フィルターの形
成直後の分光特性図、第３図は、１０層の誘電体多層膜
ＳＨＷ型干渉フィルターを大気中に取り出した後のピー
ク位置の変化の様子を、時間軸に対して示した特性図、
第４図は、形成した１０層の誘電体多層膜ＳＨＷ型干渉
フィルターを脱気処理した後、再び大気中に放置した際
のピーク位置の変化の様子を、時間軸に対して示した特
性図、第５図は、脱気処理した１０層の誘電体多層膜Ｓ
ＨＷ型干渉フィルターに疎水化処理を施したものを、再
び大気中に放置した際のピーク位置の変化の様子を、時
間軸に対して示した特性図である。
代理人 弁理士 杉 山 毅 至（他１名）９６ｆｔ１
図
第２図
中心ピークの長波長側へのシフト量（ｎｍ＋）経過時間
（ｆｉｒｓ）
第４，１ヌ１
経過時間（１＋ｒｓ）
第５図Figure 1 shows the 10-layer dielectric multilayer film S used in this example.
A block diagram of the HW type interference filter. Figure 2 is a spectral characteristic diagram of the 10-layer dielectric multilayer film SHW type interference filter shown in Figure 1 immediately after formation. Figure 3 is a diagram of the 10-layer dielectric multilayer film shown in Figure 3. A characteristic diagram showing the change in peak position against the time axis after the SHW type interference filter is taken out into the atmosphere.
Figure 4 is a characteristic diagram showing how the peak position changes over time when the formed 10-layer dielectric multilayer SHW interference filter is left in the atmosphere again after degassing. , FIG. 5 shows a 10-layer dielectric multilayer film S that has been deaerated.
FIG. 2 is a characteristic diagram showing how the peak position changes with respect to the time axis when a HW type interference filter subjected to hydrophobic treatment is left in the atmosphere again. Agent Patent attorney Takeshi Sugiyama (1 other person) 96ft1
Figure 2 Amount of shift of center peak to longer wavelength side (nm+) Elapsed time (firs) 4.1 Nu1 Elapsed time (1+rs) Figure 5
Claims (1)
薄膜、あるいは低屈折率誘電体物質と高屈折率誘電体物
質の交互の積層膜からなる誘電体薄膜を形成した後、該
誘電体薄膜に対し疎水化処理を行なうことを特徴とする
誘電体光学薄膜の作製方法。 ２、前記誘電体薄膜に対し疎水化処理を行なうに先立ち
、脱気処理を行なうことを特徴とする特許請求の範囲第
１項記載の誘電体光学薄膜の作製方法。[Claims] 1. Forming a dielectric thin film made of a single dielectric material or a dielectric thin film made of alternating laminated films of a low refractive index dielectric material and a high refractive index dielectric material by a vacuum evaporation method or the like. 1. A method for producing a dielectric optical thin film, which comprises performing hydrophobization treatment on the dielectric thin film. 2. The method for producing a dielectric optical thin film according to claim 1, wherein the dielectric thin film is subjected to deaeration treatment before being subjected to hydrophobization treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62001508A JPS63168602A (en) | 1987-01-06 | 1987-01-06 | Preparation of thin optical dielectric film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62001508A JPS63168602A (en) | 1987-01-06 | 1987-01-06 | Preparation of thin optical dielectric film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63168602A true JPS63168602A (en) | 1988-07-12 |
Family
ID=11503420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62001508A Pending JPS63168602A (en) | 1987-01-06 | 1987-01-06 | Preparation of thin optical dielectric film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63168602A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63240504A (en) * | 1987-03-27 | 1988-10-06 | Sharp Corp | Preparation of thin dielectric optical film |
| JPH03233501A (en) * | 1990-02-09 | 1991-10-17 | Copal Co Ltd | Optical multilayered film filter element and production thereof |
-
1987
- 1987-01-06 JP JP62001508A patent/JPS63168602A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63240504A (en) * | 1987-03-27 | 1988-10-06 | Sharp Corp | Preparation of thin dielectric optical film |
| JPH0529083B2 (en) * | 1987-03-27 | 1993-04-28 | Sharp Kk | |
| JPH03233501A (en) * | 1990-02-09 | 1991-10-17 | Copal Co Ltd | Optical multilayered film filter element and production thereof |
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