JPS63147121A - Focus detector - Google Patents
Focus detectorInfo
- Publication number
- JPS63147121A JPS63147121A JP61295359A JP29535986A JPS63147121A JP S63147121 A JPS63147121 A JP S63147121A JP 61295359 A JP61295359 A JP 61295359A JP 29535986 A JP29535986 A JP 29535986A JP S63147121 A JPS63147121 A JP S63147121A
- Authority
- JP
- Japan
- Prior art keywords
- light
- photography system
- layers
- photoreceptor
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims abstract description 19
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- 108091008695 photoreceptors Proteins 0.000 claims description 58
- 238000003384 imaging method Methods 0.000 claims description 15
- 230000004907 flux Effects 0.000 abstract description 14
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract 1
- 238000009826 distribution Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
- Focusing (AREA)
- Automatic Focus Adjustment (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は写真用カメラやどデオカメラ等に好適な焦点装
置に関し、特に撮影系を通過した被写体からの光束の収
斂状態を受光手段により求め、該受光手段からの出力信
号を利用して撮影系の焦点状態を検出する受光型の焦点
検出装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a focusing device suitable for photographic cameras, video cameras, etc., and in particular, it uses a light receiving means to determine the convergence state of a luminous flux from an object that has passed through a photographing system. The present invention relates to a light-receiving type focus detection device that detects the focus state of a photographing system using an output signal from a light-receiving means.
（従来の技術）
従来よりＪ［系を通過した光束を利用して焦点検出を行
う受光型の焦点検出方式の１つに所謂ＴＣＬ位相検出方
式がある。(Prior Art) A so-called TCL phase detection method is one of the light-receiving focus detection methods that perform focus detection using the light flux that has passed through the J system.
この方式は例えば特開昭５４−１５９２５９号公報で提
案されているように撮影系による被写体像の形成される
予定結像面近傍に複数の微少な集光レンズを一次元方向
に並べた複眼レンズを配置し、更にその後方に各集光レ
ンズ毎に１対の受光素子を同方向の１次元方向に並べ、
これら複数の１対の受光素子より第１と第２の２つの受
光素子列を形成した受光手段を配置している。そして複
眼レンズにより被写体像に関する２つの光量分布を受光
手段を構成する第１の受光素子列と第２の受光素子列面
上に形成している。This method is proposed, for example, in Japanese Patent Application Laid-Open No. 54-159259, which uses a compound eye lens in which a plurality of minute condensing lenses are arranged one-dimensionally in the vicinity of the intended image formation plane where the subject image is formed by the photographing system. , and behind it a pair of light receiving elements for each condenser lens are arranged in the same one-dimensional direction,
A light receiving means is arranged in which two light receiving element rows, a first and a second light receiving element array, are formed from the plurality of pairs of light receiving elements. Two light intensity distributions regarding the subject image are formed by the compound eye lens on the surfaces of the first light receiving element array and the second light receiving element array constituting the light receiving means.
このときの第１の受光素子列と第２の受光素子刈面上に
形成される２つの被写体像に関する光量分布の相対的な
位置関係は＆影系の合焦状態によって異なってくる。At this time, the relative positional relationship of the light amount distributions regarding the two subject images formed on the first light receiving element row and the second light receiving element cutting surface differs depending on the focusing state of the &shadow system.
例えば各受光素子列の素子の並び方向に撮影系の予定結
像面からの焦点外れ量に応じた横ずれ量となって現われ
てくる。For example, the amount of lateral shift appears in the direction in which the elements of each light-receiving element row are arranged in accordance with the amount of defocus from the intended imaging plane of the photographing system.
同公報ではこのときの光学性質を利用して撮影系の合焦
状態、即ち焦点外れ量を２つの被写体像に関する光量分
布の相対的な位置関係を検出することにより行っている
。In this publication, the optical properties at this time are utilized to determine the in-focus state of the photographing system, that is, the amount of out-of-focus by detecting the relative positional relationship of the light quantity distributions regarding the two subject images.
しかしながら、このＴＣＬ位相検出方式は２つの被写体
像に関する光量分布の相対的な位置関係を検出するのに
マイクロコンピュータ−等の比較的複雑な電気信号処理
手段を必要としでいる。又複数の集光レンズと各集光レ
ンズ毎に１対の受光素子を精度良く配置しなければなら
ない受光手段を必要とし装置全体が複雑化し、更に受光
型の検出方式を利用している為に被写体のコントラスト
が低い、所謂フラットな映像の場合には撮影系によって
得られる被写体像の光量分布の相関値の変化か小さくな
り、高精度な焦点検出か困難となる傾向かあった。However, this TCL phase detection method requires relatively complicated electrical signal processing means such as a microcomputer to detect the relative positional relationship of the light quantity distributions regarding the two subject images. In addition, the entire device becomes complicated because it requires a light receiving means that requires multiple condensing lenses and a pair of light receiving elements arranged with precision for each condensing lens, and furthermore, because a light receiving type detection method is used. In the case of a so-called flat image in which the contrast of the object is low, the change in the correlation value of the light intensity distribution of the object image obtained by the imaging system becomes small, which tends to make it difficult to detect a focus with high accuracy.
（発明が解決しようとする問題点）
本発明は撮影系を通過した光束を利用する受光型の焦点
検出装置において、光束の収斂状態を検出することによ
り被写体のコントラストが低くても、又どのような被写
体であっても常に高精度な焦点検出が可能な簡易な構成
の焦点検出装置の提供を目的とする。(Problems to be Solved by the Invention) The present invention is a light-receiving type focus detection device that uses the light flux that has passed through the imaging system, and by detecting the convergence state of the light flux, even if the contrast of the subject is low, It is an object of the present invention to provide a focus detection device with a simple configuration that can always perform highly accurate focus detection even for a subject.
（問題点を解決するための手段）
複数の光感光性の受光体層を光透過性の絶縁層で分離し
て複数層重ね合わした受光手段を、該受光体層が撮影系
の光軸に対して略垂直となるように配置し、面記受光手
段からの撮影系の焦点状態に関する出力信号を利用して
、ｉｉ「記撮影系の焦点状態を検出したことである。(Means for solving the problem) A light-receiving means is constructed by stacking a plurality of photoreceptor layers separated by a light-transmitting insulating layer, and the photoreceptor layers are aligned with the optical axis of the imaging system. The focal state of the photographing system is detected using the output signal from the surface light receiving means regarding the focal state of the photographing system.
（実施例）
第１図は本発明の焦点検出装置において焦点状態を検出
するときの原理の説明図である。同図（Ａ）は撮影系の
焦点状態が面ビン状態のとき、同図（Ｂ）は合焦状態の
とき、同図（Ｃ）は後ピン状態のときを示す。(Example) FIG. 1 is an explanatory diagram of the principle of detecting a focus state in a focus detection device of the present invention. 5A shows a state in which the photographing system is in focus, FIG. 2B shows a state in focus, and FIG. 1C shows a state in rear focus.
図中３００は被写体、２００は撮影系で便宜上１枚のレ
ンズで示している。１００は受光手段である。本実施例
では受光手段１００を入射光量によって抵抗値や起電力
等の電気的諸特性が変化する半導体等から成る第１、第
２、第３受光体層１０１．１０２．１０３の３つの受光
体層を光透過性の例えば二酸化シリコン（Ｓｉ０２）等
の絶縁層１０４、＋０５で分離し、積層して構成してい
る。In the figure, 300 is a subject, and 200 is a photographing system, which is shown as a single lens for convenience. 100 is a light receiving means. In this embodiment, the light receiving means 100 consists of three photoreceptors, first, second, and third photoreceptor layers 101, 102, and 103 made of a semiconductor or the like whose electrical characteristics such as resistance and electromotive force change depending on the amount of incident light. The layers are separated by light-transmissive insulating layers 104 and +05 made of silicon dioxide (Si02), for example, and are laminated.
そして受光手段１００を各受光体層が撮影系２００の光
軸Ｓに対して略垂直になるようにして撮影系２００の予
定結像面近傍に配置している。特に本実施例では複数の
受光体層のうち略中間位置に相当する第２受光体層＋０
２が撮影系２００の予定結像面と一致するように配置し
ている。The light-receiving means 100 is arranged near the intended imaging plane of the imaging system 200 so that each photoreceptor layer is substantially perpendicular to the optical axis S of the imaging system 200. In particular, in this embodiment, the second photoreceptor layer corresponding to approximately the middle position among the plurality of photoreceptor layers +0
2 is arranged so that it coincides with the planned imaging plane of the imaging system 200.
尚本実施例において受光手段＋００を構成する受光体層
の数は２つ以上複数個設ければいくつ設けても良い。In this embodiment, the number of photoreceptor layers constituting the light receiving means +00 may be any number as long as it is two or more.
次に焦点状態の検出方法について説明する。Next, a method of detecting the focus state will be explained.
同図（Ａ）の撮影系２００の焦点状態が前ピン状態のと
きは撮影光束は第２受光体層＋０２よりも物体（ｌ））
に収束する。この為第１受光体層＋０１には他の受光体
層＋０２．１０３に比べて大きなエネルギーが集中する
。この結果各受光体層の電気的諸特性、例えば抵抗値は
第１、第２、第３受光体層の１０１．１０２．１０３の
順で小さくなってくる。When the focal state of the photographing system 200 in FIG.
converges to. For this reason, a larger amount of energy is concentrated on the first photoreceptor layer +01 than on the other photoreceptor layers +02, 103. As a result, the electrical characteristics of each photoreceptor layer, such as resistance value, become smaller in the order of 101, 102, and 103 of the first, second, and third photoreceptor layers.
又同図（Ｂ）の撮影系２００の焦点状態が合焦状態のと
きは、中間位置にある第２受光体層＋０２に大きな光エ
ネルギーが集中する。この為３つの受光体層１０１．１
０２．１０３の抵抗値のうち第２受光体層１０２の抵抗
値が最も小さくなってくる。Furthermore, when the photographing system 200 in FIG. 2B is in focus, a large amount of light energy is concentrated on the second photoreceptor layer +02 located at the intermediate position. For this purpose three photoreceptor layers 101.1
Among the resistance values of 02.103, the resistance value of the second photoreceptor layer 102 is the smallest.
更に同図（Ｃ）の［１９系２００の焦点状態が後ピン状
態のときは第３受光体層＋０３に光エネルギーが集中す
る。この為３つの受光体層の抵抗値は第３、第２、第１
受光体層１０３，１０２．１旧の順で小さくなってくる
。Furthermore, when the focus state of the [19 system 200 in FIG. Therefore, the resistance values of the three photoreceptor layers are 3rd, 2nd, and 1st.
The photoreceptor layers 103 and 102.1 become smaller in order.
本実施例ではこのように各受光体層の抵抗値か撮影系２
００による光束の収斂状、態により変化する性質を利用
することにより撮影系２００の合焦状態を検出すること
を特徴としている。In this embodiment, the resistance value of each photoreceptor layer is determined by the imaging system 2.
It is characterized in that the focusing state of the photographing system 200 is detected by utilizing the convergence state of the light beam due to 00, a property that changes depending on the state.
尚本実施例に右いて受光体層としてＳｉ、Ｇｅ等の半導
体層を用いた場合には入射光束の光量は受光手段に入射
し、受光体層を進行するにつれて序々に減衰してくる。In this embodiment, when a semiconductor layer such as Si or Ge is used as the photoreceptor layer, the amount of the incident light beam enters the light receiving means and gradually attenuates as it travels through the photoreceptor layer.
特に入射光束のうち短波長成分程多く受光体層で吸収さ
れ長波長成公租、受光体層を良く通過してくる。In particular, the shorter the wavelength component of the incident light beam, the more it is absorbed by the photoreceptor layer, and the longer the wavelength component, the more easily it passes through the photoreceptor layer.
この為本実施例では、例えば第２、第３受光体層より出
力信号を得る際青色成分や緑色成分の光束吸収率を考慮
して、電気的手段や光学手段により補正している。これ
により合焦状態の検出精度の低下を防止している。For this reason, in this embodiment, when obtaining output signals from the second and third photoreceptor layers, for example, the luminous flux absorption rate of the blue component and the green component is taken into account and corrected by electrical means or optical means. This prevents deterioration in the detection accuracy of the in-focus state.
第３図（Ａ）は光の入射側からみた受光手段＋００の平
面構造、第３図（Ｂ）は第３図（Ａ）に示すＡＡの線に
沿った断面構造を示している。第３図（Ａ）、（Ｂ）に
おいて１０１が第１の受光体層、１０２が第２の受光体
層、！０３が第３の受光体層である。受光体層としては
半導体層等であり例えばＣｄＳ、ＣｄＳｅまたはそれら
の固溶体、Ｓｉおよび非晶質Ｓｉなどを用いることがで
きる。同図における斜線部は光な通過する絶縁膜（例え
ば５ｉＯ２）をあられしており、第１の受光体層１０１
と第２の受光体層１０２の間に絶縁層１０４、第２の受
光体層１０２と第３の受光体層１０３の間には絶縁層１
０５が挟まれている。第１の受光体層ｌｏｔの一端は低
抵抗層４０１を介して電極６３Ｉ（例えばＡＩ）に接続
されている。この電極と低抵抗の半導体層６１４との間
に絶縁層６１８があり、第１のコンデンサを形成してい
る。FIG. 3(A) shows a planar structure of the light receiving means +00 viewed from the light incident side, and FIG. 3(B) shows a cross-sectional structure along line AA shown in FIG. 3(A). In FIGS. 3(A) and 3(B), 101 is the first photoreceptor layer, 102 is the second photoreceptor layer,! 03 is the third photoreceptor layer. The photoreceptor layer is a semiconductor layer or the like, and for example, CdS, CdSe or a solid solution thereof, Si, amorphous Si, etc. can be used. The shaded area in the figure is an insulating film (for example, 5iO2) through which light passes, and the first photoreceptor layer 101
An insulating layer 104 is provided between the second photoreceptor layer 102 and the second photoreceptor layer 102, and an insulating layer 1 is provided between the second photoreceptor layer 102 and the third photoreceptor layer 103.
05 is sandwiched. One end of the first photoreceptor layer lot is connected to an electrode 63I (for example, AI) via a low resistance layer 401. There is an insulating layer 618 between this electrode and the low resistance semiconductor layer 614, forming a first capacitor.
第２の受光体層１０２の一端は低抵抗層４０２を介して
電極６３２に接続されており、この電極は半導体層６１
４との間で第２のコンデンサを形成している。第３の受
光体層＋０３の一端は低抵抗層４０３を介して電極６３
３に接続され、低抵抗の半導体層６１４との間に第３の
コンデンサを形成する。低抵抗の半導体層６１４は第１
、第２および第３の半導体層の他端に接続されている。One end of the second photoreceptor layer 102 is connected to an electrode 632 via the low resistance layer 402, and this electrode is connected to the semiconductor layer 61.
4 forms a second capacitor. One end of the third photoreceptor layer +03 is connected to the electrode 63 via the low resistance layer 403.
3 to form a third capacitor between the low-resistance semiconductor layer 614 and the low-resistance semiconductor layer 614. The low resistance semiconductor layer 614 is the first
, are connected to the other ends of the second and third semiconductor layers.
したがって、各半導体層とコンデンサは並列に接続され
ていることになる。Therefore, each semiconductor layer and the capacitor are connected in parallel.
半導体層６１４は共通電位（例えばアース）に接続され
ている。Semiconductor layer 614 is connected to a common potential (eg, ground).
第２図は本発明をビデオカメラに適用したときの一実施
例の概略図である。同図において２００はｗＬ影系、＋
００は受光手段であり、第１図で示した受光手段と同様
の構成より成っている。FIG. 2 is a schematic diagram of an embodiment in which the present invention is applied to a video camera. In the figure, 200 is the wL shadow system, +
00 is a light receiving means, which has the same structure as the light receiving means shown in FIG.
４６１はレンズ鏡筒でありＪ［系２００を保持している
。２０１はリレーレンズ４１１はハーフミラ−１４１２
はミラーであり、両ミラー４１１．４１２により撮影系
２００を通過した光束の一部を受光手段１００に導光し
ている。４５０は撮像素子、４５１は撮像素子４５０の
焦点面である。２０２は焦点面４５０と光学的に等価な
位置の予定結像面４０１．４０２．４０３は各々、抵抗
体、４２１．４２２は各々比較器、４３０はモーター駆
動回路、４６０はモーターであり撮影系２００の合焦部
を駆動している。４７０は直流電源である。予定結像面
２０２はリレーレンズ２０１により受光手段１００の第
２受光体層！０２に結像するように配置されている。461 is a lens barrel that holds the J system 200. 201 is a relay lens 411 is a half mirror 1412
are mirrors, and both mirrors 411 and 412 guide a part of the light flux that has passed through the photographing system 200 to the light receiving means 100. 450 is an image sensor, and 451 is a focal plane of the image sensor 450. 202 is a predetermined image forming plane at a position optically equivalent to the focal plane 450, and 401, 402, and 403 are each a resistor, 421, 422 are each a comparator, 430 is a motor drive circuit, and 460 is a motor, which is the photographing system 200. It drives the focusing section. 470 is a DC power supply. The planned image forming surface 202 is the second photoreceptor layer of the light receiving means 100 by the relay lens 201! 02.
本実施例ではＶｉｉ影系２００を通過した被写体からの
光束４００をハーフミラ−４１１で２つの光束に分割し
ている。このうちハーフミラ−４１１を通過した光束は
撮像素子４５０の焦点面４５１上に結像し、ハーフミラ
−４１１を反射した光束は予定結像面２０２近傍に結像
し、その後リレーレンズ２０１によりミラー４１２を介
して受光手段１００に入射するようにしている。In this embodiment, a light beam 400 from the subject that has passed through the Vii shadow system 200 is divided into two light beams by a half mirror 411. Of these, the light flux that has passed through the half mirror 411 forms an image on the focal plane 451 of the image sensor 450, and the light flux that has been reflected from the half mirror 411 forms an image near the intended image formation plane 202, and then the mirror 412 is focused by the relay lens 201. The light is made to enter the light receiving means 100 through the light receiving means 100.
そして受光手段１００の３つの受光体層＋０１、＋０２
．１０３の一端からは直流電圧４７０から電圧Ｅを印加
し、他端からは抵抗値Ｒ，を有する抵抗体４０１、４０
２．４０３を介して共通電圧に接続している。and three photoreceptor layers +01, +02 of the light receiving means 100.
．． A voltage E from a DC voltage 470 is applied from one end of the 103, and resistors 401 and 40 having a resistance value R are applied from the other end.
2.403 to the common voltage.
このとき第１受光体層１０１と抵抗体４旧の結合点４１
１ｉ、第２受光体層１０２と抵抗体４０２の結合点４１
７、あるいは第３受光体層１０３と抵抗体４０３の結合
点４１８からは３つの受光体層＋０１．１０２．１０３
の抵抗値を各々Ｒ，Ｊとすると次式で示される電圧Ｖｎ
が得られる。At this time, the connection point 41 between the first photoreceptor layer 101 and the resistor 4
1i, connection point 41 between the second photoreceptor layer 102 and the resistor 402
7, or from the connection point 418 of the third photoreceptor layer 103 and the resistor 403, three photoreceptor layers +01.102.103
Letting the resistance values of R and J be respectively, the voltage Vn shown by the following formula
is obtained.
第１式より受光体層の抵抗値Ｒ５が小さい程各節点４１
６．４１７．４１８から得られる電圧は高くなる。From the first equation, the smaller the resistance value R5 of the photoreceptor layer, the more each node 41
The voltage obtained from 6.417.418 will be higher.
本実施例では第１、第２、第３受光体層＋０１、１０２
．１０３の抵抗値を光束が入射しない状態で等しくなる
ように設定しておき、又抵抗体４０１．４０２．４０３
の各抵抗値を全て等しくしている。そして光束のエネル
ギーが最も集中したとき、その抵抗値が最も小さくなる
ような受光体を用いている。これにより入射光束により
抵抗値が最も小さくなる受光体層と接続される抵抗体と
の結合点では他の２つの結合点よりも高い電圧が得られ
るようにしている。In this embodiment, the first, second and third photoreceptor layers +01, 102
．． The resistance values of resistors 401, 402, and 403 are set to be equal when no light beam is incident.
All resistance values are made equal. A photoreceptor is used whose resistance value is the smallest when the energy of the luminous flux is most concentrated. This allows a higher voltage to be obtained at the connection point between the photoreceptor layer and the connected resistor, where the resistance value is the smallest due to the incident light flux, than at the other two connection points.
従って撮像素子４５０の焦点面４５１に焦点を結ぶ状態
、即ち合焦状態のときは前記の設定条件より受光手段１
００の第２受光体層１０２に光束のエネルギーが最も強
く集中する。この結果節点４１７からは節点４１６、や
４１８の・電圧よりも高い電圧が得られる。同様に前ビ
ン状態のときは節点４１６で得られる電圧が最大となり
、又後ビン状態のときは節点４１８で得られる電圧が最
大となる。Therefore, when the image sensor 450 is focused on the focal plane 451, that is, when it is in focus, the light receiving means 1
The energy of the luminous flux is most strongly concentrated in the second photoreceptor layer 102 of 00. As a result, a voltage higher than that of nodes 416 and 418 is obtained from node 417. Similarly, in the front bin state, the voltage obtained at node 416 is the maximum, and in the back bin state, the voltage obtained at node 418 is the maximum.
本実施例では比較器４２１の非反転入力端子に節点４１
７の電圧を印加し反転入力端子に節点４１６の電圧を印
加する。またもうひとつの比較器４２２の非反転入力端
子に節点４１７の電圧を印加し、反転入力端子に節点４
１８の電圧を印加する。これにより比較器４２１の出力
端子４３１と比較器４２２の出力端子４３２の出力には
次の値が得られる。即ち工）合ピン状態のときは端子４
３１．４３２からは共に高レベルの信号
■）＠ピン状態のときは端子４３１には低レベル４３２
には高レベルの信号
■）後ビンの状態のときは端子［１には高レベル４３２
には低レベルの信号
となる。そこで２つの比較器４２１．４２２の端子４３
１．４３２からの信号をモーター駆動回路４３０に人力
している。In this embodiment, the node 41 is connected to the non-inverting input terminal of the comparator 421.
7 is applied, and the voltage at node 416 is applied to the inverting input terminal. In addition, the voltage at node 417 is applied to the non-inverting input terminal of another comparator 422, and the voltage at node 417 is applied to the inverting input terminal.
18 voltages are applied. As a result, the following values are obtained at the output terminal 431 of the comparator 421 and the output terminal 432 of the comparator 422. In other words, when the pin is in the mating state, terminal 4
Both high level signals from 31 and 432 ■) When in @ pin state, low level 432 is sent to terminal 431
High level signal ■) When in the rear bin state, high level signal 432
This results in a low level signal. Therefore, the terminals 43 of the two comparators 421 and 422
The signal from 1.432 is manually input to the motor drive circuit 430.
そしてこのときのモーター駆動回路４３０に人力される
信号に応じてモーター４６０を駆動させ、撮影系２００
の合焦状態を調節している。At this time, the motor 460 is driven in accordance with the signal manually input to the motor drive circuit 430, and the photographing system 200 is driven.
The focus state of the camera is being adjusted.
即ち２つの端子４３１，４３２からの出力信号が工）の
場合には合焦状態であるのでモーター駆動回路４３０の
出力はモーター停止モードとなりモーター４６０を動作
させない。又■）の前ビン状態の場合はモーター駆動回
路４３０によりモーター４６０を順方向に回転させ、撮
影系２００の合焦部を駆動させてピント位置が撮像素子
４５０の焦点面４５１に近づけるようにしている。逆に
■）の後ビン状態のときは■）の前ビン状態のときと逆
方向にモーターを回転させ撮影系２００の合焦部を駆動
させてピント位置を逆方向に移動させるようにしている
。That is, when the output signals from the two terminals 431 and 432 are 1), it means that the camera is in focus, so the output of the motor drive circuit 430 becomes a motor stop mode, and the motor 460 is not operated. In addition, in the case of the front bin state (2), the motor drive circuit 430 rotates the motor 460 in the forward direction, and drives the focusing section of the photographing system 200 so that the focus position approaches the focal plane 451 of the image pickup element 450. There is. Conversely, in the rear bin state (■), the motor is rotated in the opposite direction to the front bin state (■) to drive the focusing section of the photographing system 200 and move the focus position in the opposite direction. .
このように本実施例では２つの比較器４２１，４２２か
らの出力信号を用いてモーター駆動回路４３０によりモ
ーター ４６０を所定方向に回動させることにより撮影
系２００の合焦部を駆動させピント位置を調節して合焦
を行っている。In this way, in this embodiment, the motor drive circuit 430 rotates the motor 460 in a predetermined direction using the output signals from the two comparators 421 and 422, thereby driving the focusing section of the photographing system 200 and adjusting the focus position. Adjusting and focusing.
尚本実施例において比較器への人力方法は前述以外の方
法であっても各受光体層からの出力信号の大小関係が求
められる方法であれば、どのような方法であっても良い
。In this embodiment, the comparator may be manually operated by any method other than the above-mentioned method as long as it can determine the magnitude relationship between the output signals from each photoreceptor layer.
本実施例では３つの受光体層を用いた場合を示したが、
例えば２つの受光体層を用いてその間の絶縁層が撮影系
の予定結像面に位置するように配置し、双方の受光体層
からの出力信号が等しくなったとき合焦状態であると判
別するようにしても良い。This example shows the case where three photoreceptor layers are used, but
For example, two photoreceptor layers are used so that the insulating layer between them is located at the intended imaging plane of the imaging system, and when the output signals from both photoreceptor layers become equal, it is determined that the state is in focus. You may also do this.
又３つ以上複数の受光体層を用いて例えば５つの奇数個
用いた場合には中間の受光体層がｗＬ影系の予定結像面
（撮像素子の焦点面）に位置するように配置し、又４つ
の比較器と更に４つの比較器からの出力信号を比較する
為の２つの比較器の合計６つの比較器を組み合わせれば
第２図の実施例より更に高精度に焦点検出をすることが
できる。In addition, when three or more photoreceptor layers are used, for example, an odd number of five photoreceptor layers are used, the intermediate photoreceptor layer is arranged so as to be located at the expected imaging plane of the wL shadow system (focal plane of the image sensor). , and if a total of six comparators, including four comparators and two comparators for comparing the output signals from four more comparators, are combined, focus detection can be performed with even higher precision than the embodiment shown in FIG. be able to.
（発明の効果）
本発明によれば焦点検出に撮影系を通過した光束の収束
状態、即ち光エネルギーが最も強く集中する位置を検出
する方法をとっている為に、従来のように２つの被写体
像に関する光量分布の相対的な位置関係を求める為のマ
イクロコンピュータ−等を用いる必要はなく装置全体の
ｍ素化か容易となり、又被写体のコントラストが低い場
合であっても常に高精度な焦点検出が可能な焦点検出装
置を達成することができる。(Effects of the Invention) According to the present invention, since the focus is detected by detecting the convergence state of the light flux passing through the imaging system, that is, the position where the light energy is most strongly concentrated, it is possible to There is no need to use a microcomputer to determine the relative positional relationship of the light intensity distribution with respect to the image, making it easy to configure the entire device with m elements, and even when the contrast of the subject is low, the focus can always be detected with high precision. A focus detection device capable of this can be achieved.
第１図は本発明の焦点検出装置の焦点検出をするときの
原理の説明図、第２８は本発明をビデオカメラに適用し
たときの一実施例の概略図、第３図（Ａ）、（Ｂ）は本
発明に係る受光手段の説明図である。図中３００は被写
体、２００は撮影系、１００は受光手段、ｌｏｔ、１０
２、＋０３は受光体層、１０４．１０５は絶縁層、４２
１．４２２は比較器、４３０はモーター駆動回路、４６
０はモーター、４１１はハーフミラ−１４１２はミラー
、４５０は撮像素子、４５１は焦点面、４００は光束、
Ｓは光軸である。
特許出願人 キャノン株式会社
第１図FIG. 1 is an explanatory diagram of the principle of focus detection by the focus detection device of the present invention, FIG. 28 is a schematic diagram of an embodiment when the present invention is applied to a video camera, and FIGS. B) is an explanatory diagram of the light receiving means according to the present invention. In the figure, 300 is the subject, 200 is the photographing system, 100 is the light receiving means, lot, 10
2, +03 is the photoreceptor layer, 104.105 is the insulating layer, 42
1.422 is a comparator, 430 is a motor drive circuit, 46
0 is a motor, 411 is a half mirror, 1412 is a mirror, 450 is an image sensor, 451 is a focal plane, 400 is a luminous flux,
S is the optical axis. Patent applicant Canon Co., Ltd. Figure 1
Claims (2)
分離して複数層重ね合わした受光手段を、該受光体層が
対物系の光軸に対して略垂直となるように配置し、前記
受光手段からの撮影系の焦点状態に関する出力信号を利
用して、前記撮影系の焦点状態を検出したことを特徴と
する焦点検出装置。(1) A light-receiving means in which a plurality of photosensitive photoreceptor layers are separated by a light-transmissive insulating layer and stacked on top of each other is arranged such that the photoreceptor layers are approximately perpendicular to the optical axis of the objective system. A focus detection device, characterized in that the focus state of the photographing system is detected by using an output signal from the light receiving means regarding the focus state of the photographing system.
する受光体層からの出力信号を比較器で比較し、該比較
器からの出力信号に基づいて前記撮影系の焦点状態を検
出したことを特徴とする特許請求の範囲第１項記載の焦
点検出装置。(2) The light receiving means is composed of two or more photoreceptor layers, and a comparator compares output signals from adjacent photoreceptor layers, and detects the focus state of the imaging system based on the output signal from the comparator. A focus detection device according to claim 1, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61295359A JPS63147121A (en) | 1986-12-11 | 1986-12-11 | Focus detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61295359A JPS63147121A (en) | 1986-12-11 | 1986-12-11 | Focus detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63147121A true JPS63147121A (en) | 1988-06-20 |
Family
ID=17819597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61295359A Pending JPS63147121A (en) | 1986-12-11 | 1986-12-11 | Focus detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63147121A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009000496A (en) * | 2007-05-21 | 2009-01-08 | Zojirushi Corp | Heater mounting structure of heating apparatus |
| JP2016220019A (en) * | 2015-05-20 | 2016-12-22 | 日本放送協会 | Imaging apparatus |
-
1986
- 1986-12-11 JP JP61295359A patent/JPS63147121A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009000496A (en) * | 2007-05-21 | 2009-01-08 | Zojirushi Corp | Heater mounting structure of heating apparatus |
| JP2016220019A (en) * | 2015-05-20 | 2016-12-22 | 日本放送協会 | Imaging apparatus |
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