JPS631280B2 - - Google Patents

Info

Publication number: JPS631280B2
Authority: JP; Japan
Prior art keywords: diamond; diffusion layer; temperature; filament; surface diffusion
Prior art date: 1983-04-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP58057043A

Other languages

English (en)

Japanese (ja)

Other versions

JPS59184791A (ja

Inventor

Noribumi Kikuchi

Takayuki Shingyochi

Hiroaki Yamashita

Akio Nishama

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Mitsubishi Metal Corp

Original Assignee

Mitsubishi Metal Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-04-01

Filing date

1983-04-01

Publication date

1988-01-12

1983-04-01 Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp

1983-04-01 Priority to JP58057043A priority Critical patent/JPS59184791A/ja

1984-10-20 Publication of JPS59184791A publication Critical patent/JPS59184791A/ja

1988-01-12 Publication of JPS631280B2 publication Critical patent/JPS631280B2/ja

Status Granted legal-status Critical Current

Links

239000010432 diamond Substances 0.000 claims description 39
229910003460 diamond Inorganic materials 0.000 claims description 29
238000000034 method Methods 0.000 claims description 23
238000009792 diffusion process Methods 0.000 claims description 19
230000015572 biosynthetic process Effects 0.000 claims description 10
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
229910002804 graphite Inorganic materials 0.000 claims description 6
239000010439 graphite Substances 0.000 claims description 6
238000003786 synthesis reaction Methods 0.000 claims description 6
239000012808 vapor phase Substances 0.000 claims description 6
238000006243 chemical reaction Methods 0.000 claims description 5
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
229910052751 metal Inorganic materials 0.000 claims description 4
239000002184 metal Substances 0.000 claims description 4
150000002739 metals Chemical class 0.000 claims description 4
229910052796 boron Inorganic materials 0.000 claims description 3
229910052799 carbon Inorganic materials 0.000 claims description 3
239000008187 granular material Substances 0.000 claims description 3
229910052721 tungsten Inorganic materials 0.000 claims description 3
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
239000000956 alloy Substances 0.000 claims description 2
229910045601 alloy Inorganic materials 0.000 claims description 2
229910052757 nitrogen Inorganic materials 0.000 claims description 2
230000000737 periodic effect Effects 0.000 claims description 2
229910052715 tantalum Inorganic materials 0.000 claims description 2
238000001556 precipitation Methods 0.000 description 7
238000003763 carbonization Methods 0.000 description 3
238000012733 comparative method Methods 0.000 description 3
239000012535 impurity Substances 0.000 description 3
239000002245 particle Substances 0.000 description 3
239000000843 powder Substances 0.000 description 3
239000012495 reaction gas Substances 0.000 description 3
238000000151 deposition Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
238000010292 electrical insulation Methods 0.000 description 2
239000007789 gas Substances 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
239000000463 material Substances 0.000 description 2
VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
229910052750 molybdenum Inorganic materials 0.000 description 2
238000005121 nitriding Methods 0.000 description 2
239000002994 raw material Substances 0.000 description 2
239000007787 solid Substances 0.000 description 2
241000894007 species Species 0.000 description 2
239000000758 substrate Substances 0.000 description 2
238000004381 surface treatment Methods 0.000 description 2
238000001308 synthesis method Methods 0.000 description 2
241001077419 Damas Species 0.000 description 1
239000003082 abrasive agent Substances 0.000 description 1
230000002411 adverse Effects 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
239000003054 catalyst Substances 0.000 description 1
239000000470 constituent Substances 0.000 description 1
230000007423 decrease Effects 0.000 description 1
238000004880 explosion Methods 0.000 description 1
239000003721 gunpowder Substances 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
239000000203 mixture Substances 0.000 description 1
239000012071 phase Substances 0.000 description 1
229910052698 phosphorus Inorganic materials 0.000 description 1
238000004663 powder metallurgy Methods 0.000 description 1
239000002244 precipitate Substances 0.000 description 1
230000005855 radiation Effects 0.000 description 1
230000035484 reaction time Effects 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
238000000926 separation method Methods 0.000 description 1
230000002194 synthesizing effect Effects 0.000 description 1
230000009466 transformation Effects 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

JP58057043A 1983-04-01 1983-04-01 ダイヤモンドの気相合成法 Granted JPS59184791A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP58057043A JPS59184791A (ja)	1983-04-01	1983-04-01	ダイヤモンドの気相合成法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP58057043A JPS59184791A (ja)	1983-04-01	1983-04-01	ダイヤモンドの気相合成法

Publications (2)

Publication Number	Publication Date
JPS59184791A JPS59184791A (ja)	1984-10-20
JPS631280B2 true JPS631280B2 (es)	1988-01-12

Family

ID=13044413

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP58057043A Granted JPS59184791A (ja)	1983-04-01	1983-04-01	ダイヤモンドの気相合成法

Country Status (1)

Country	Link
JP (1)	JPS59184791A (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS61101493A (ja) *	1984-10-23	1986-05-20	ジヨ−ジ　ガ−ゲリ−　マ−クル	立方体炭素
JPS61106494A (ja) *	1984-10-29	1986-05-24	Kyocera Corp	ダイヤモンド被膜部材及びその製法
US4925701A (en) *	1988-05-27	1990-05-15	Xerox Corporation	Processes for the preparation of polycrystalline diamond films
FR2790267B1 (fr) *	1999-02-25	2001-05-11	Suisse Electronique Microtech	Procede de depot d'une couche de diamant sur un metal refractaire de transition et piece revetue d' une telle couche
CN112195369B (zh) *	2020-11-06	2021-07-23	西安稀有金属材料研究院有限公司	一种耐腐蚀的高强度中子屏蔽合金材料及其制备方法

1983
- 1983-04-01 JP JP58057043A patent/JPS59184791A/ja active Granted

Also Published As

Publication number	Publication date
JPS59184791A (ja)	1984-10-20

Publication	Publication Date	Title
US6887144B2 (en)	2005-05-03	Surface impurity-enriched diamond and method of making
JPS6196016A (ja)	1986-05-14	無定形金属合金粉末、嵩高対象物及び固相分解反応によるその合成法
JPH0217481B2 (es)	1990-04-20
JP2024087083A (ja)	2024-06-28	タングステンスパッタリングターゲット
JPS631280B2 (es)	1988-01-12
JPH0480876B2 (es)	1992-12-21
US20230322562A1 (en)	2023-10-12	Preparation method of high purity sic powder
JPS62119B2 (es)	1987-01-06
JPH0329023B2 (es)	1991-04-22
JPS6344719B2 (es)	1988-09-06
JPS62100403A (ja)	1987-05-09	高純度六方晶窒化硼素微粉末の製造方法
JPH01264969A (ja)	1989-10-23	β−炭化珪素成形体及びその製造法
JPH0438685B2 (es)	1992-06-25
JP3325344B2 (ja)	2002-09-17	窒化アルミニウム粉末の製造方法
JP2949827B2 (ja)	1999-09-20	ウルツアイト型炭窒化ほう素粉末およびその製造法
CN1327434A (zh)	2001-12-19	生产单同位素硅Si28的方法
JP7364449B2 (ja)	2023-10-18	窒化イットリウムの製造方法
JPH0477612B2 (es)	1992-12-08
JPH04175209A (ja)	1992-06-23	窒化アルミニウム及びその製法
JPH01131073A (ja)	1989-05-23	高融点金属シリサイド製ターゲットとその製造方法
Naka et al.	1987	Effect of ambient pretreatment of graphite and solvent-catalyst on diamond formation
JPH0357074B2 (es)	1991-08-30
JPH0699144B2 (ja)	1994-12-07	ホウ素、炭素、窒素からなる塊状体およびその製造法
JPH0610081B2 (ja)	1994-02-09	六方晶窒化硼素の製造方法
JPH07187769A (ja)	1995-07-25	Ｉｔｏ焼結体、ターゲット、蒸着用ペレット、それらを用いて形成した膜および表示素子