JPH01179373A - Solar cell element - Google Patents
Solar cell elementInfo
- Publication number
- JPH01179373A JPH01179373A JP63000398A JP39888A JPH01179373A JP H01179373 A JPH01179373 A JP H01179373A JP 63000398 A JP63000398 A JP 63000398A JP 39888 A JP39888 A JP 39888A JP H01179373 A JPH01179373 A JP H01179373A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- bsf
- solar cell
- semiconductor layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 16
- 239000012535 impurity Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims description 15
- 150000004706 metal oxides Chemical class 0.000 claims description 14
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 238000000059 patterning Methods 0.000 abstract 1
- 239000000969 carrier Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000002689 soil Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000010019 resist printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
ＰＮ接合を有する結晶形シリコン太陽電池素子の構造に
係り、少数キャリアの収集効率の向上に適した構造に関
する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to the structure of a crystalline silicon solar cell element having a PN junction, and relates to a structure suitable for improving minority carrier collection efficiency.
従来のＰＮ接合を有する結晶形シリコン太陽電池素子は
第３図に示すように、太陽電池素子の裏面にＢ Ｓ Ｆ
（Ｂａｃｋ ５ｕｒｆａｃｅ Ｆｉｅｌｄ）およびＢ
ＳＲ（Ｂａｃｋ ５ｕｒｆａｃｅ Ｒｅｆｌｅｃｔｏｒ
）を有し、ＢＳＦによる光生成キャリアの反射およびＢ
ＳＲによる入射光の反射によって太陽電池素子の交換効
率の向上を図っている（特開昭５９−３２１７９号）。As shown in FIG. 3, a conventional crystalline silicon solar cell element having a PN junction has BSF on the back side of the solar cell element.
(Back 5 surface Field) and B
SR (Back 5 surface reflector)
), the reflection of photogenerated carriers by BSF and B
The exchange efficiency of solar cell elements is improved by reflecting incident light by SR (Japanese Patent Laid-Open No. 59-32179).
この構造では、ベース層の厚さがうすくなるに従い光の
裏面反射の比率が増すため、ＢＳＦの部分でのキャリア
の発生量が増加する。しかし、ＢＳＦは高濃度のＰ型不
純物のドーピングによってのみその機能を発揮すること
から通常１０１９■−２以上の高濃度層７となっている
ため、オージェ効果および不純物ドーピング効果によっ
てキャリアのライフタイムは極めて短くなり、この層の
キャリアは再結合し光生成電流にほとんど寄与しない。In this structure, as the thickness of the base layer decreases, the ratio of light reflected from the back surface increases, so the amount of carriers generated in the BSF portion increases. However, since BSF only exhibits its function by doping with a high concentration of P-type impurity, it is usually a high concentration layer 7 of 1019■-2 or more, so the lifetime of carriers is shortened due to the Auger effect and impurity doping effect. The carriers in this layer recombine and contribute little to the photogenerated current.
従って、従来構造ではＢＳＲの機能が十分に全上記従来
構造の問題点を避けるためには、ＢＳＦとＢＳＲとを分
離してＢＳＲの機能を強化すると同時に、ＢＳＲ下部の
表面再結合速度を低減させ少数キャリアの表面再結合を
低減する必要がある。Therefore, in order to avoid the above-mentioned problems of the conventional structure, it is necessary to separate the BSF and BSR to strengthen the function of the BSR, and at the same time reduce the surface recombination rate under the BSR. It is necessary to reduce surface recombination of minority carriers.
また１分離されたＢＳＦ上に電極を形成することは、フ
ォトリソグラフィーなどの技術を必要とし経済性に問題
がある。Furthermore, forming electrodes on one separated BSF requires techniques such as photolithography, which poses an economical problem.
本発明の目的は、分離したＢＳＦとＢＳＲを有し、電極
形成が容易な太陽電池素子構造を提供すかかる目的を奏
する本発明太陽電池素子の特徴とするところは、受光面
とは反対側の面にＢＳＦとして機能する高不純物濃度層
を部分的に隣接させ、高不純物濃度層に裏面電極をオー
ミック接触させ、他の部分に金属酸化膜を設けた点にあ
る。An object of the present invention is to provide a solar cell element structure that has separate BSF and BSR and facilitates electrode formation. The main feature is that a high impurity concentration layer functioning as a BSF is partially adjacent to the front surface, a back electrode is brought into ohmic contact with the high impurity concentration layer, and a metal oxide film is provided on other parts.
ＢＳＦとしての高不純物濃度層と、ＢＳＲとして機能す
る半導体基板と金属酸化膜との界面とが分離されている
ので、ＢＳＦ及びＢＳＲの機能が十分発揮でき、変換効
率の高い太陽電池素子を得ることができる。Since the high impurity concentration layer serving as the BSF and the interface between the semiconductor substrate and the metal oxide film functioning as the BSR are separated, the functions of the BSF and BSR can be fully exhibited and a solar cell element with high conversion efficiency can be obtained. Can be done.
また、シリコン裏面上に適宜パターニングされた金属酸
化膜上を含む基板裏面全面に裏面電極を設けた構造のた
め、分離されたＢＳＦとＢＳＨの形成ならびにＢＳＦに
電極をホトリソグラフィー等をすることなく経済的に形
成することができる。In addition, because the back electrode is provided on the entire back surface of the substrate, including the metal oxide film appropriately patterned on the back surface of the silicon, it is economical because there is no need to form separate BSF and BSH, and to attach electrodes to the BSF using photolithography. It can be formed as follows.
第１図において、１は一対の主表面１１．１２間に、一
方の主表面１１に隣接するｎ土層１３゜ｎ中層、に隣接
すると共に他方の主表面１２に一部が隣接するｎ土層１
３より低不純物濃度の２層１４、他方の主表面１２の残
部に隣接すると共に２層１４に隣接する２層１４より高
不純物濃度のｐ＋十層５を有する半導体基板、２は一方
の主表面１１の選ばれた個所にオーミック接触した一方
の主電極、３は一方の主表面１１の露出面及び一方の主
電極２上に形成した５ｉＯｚの如き反射防止膜、４は他
方の主表面１２の２層１４の露出部上に形成した金属酸
化膜、５は他方の主表面１２のｐ＋十層５の露出部及び
金属酸化膜４上に形成した他方の主電極である。In FIG. 1, 1 is a soil layer 13, which is located between a pair of main surfaces 11 and 12, adjoins the middle layer of the soil layer 13, which is adjacent to one of the main surfaces 11, and which is partially adjacent to the other main surface 12. layer 1
A semiconductor substrate having two layers 14 having an impurity concentration lower than 3 and a p+ layer 5 having a higher impurity concentration than the second layer 14 adjacent to the remainder of the other main surface 12 and adjacent to the second layer 14; 11 is in ohmic contact with one main electrode, 3 is an antireflection film such as 5iOz formed on the exposed surface of one main surface 11 and one main electrode 2, and 4 is an antireflection film such as 5iOz on the other main surface 12. The metal oxide film 5 formed on the exposed portion of the second layer 14 is the other main electrode formed on the exposed portion of the p+ layer 5 and the metal oxide film 4 on the other main surface 12.
かかる構成の本発明太陽電池素子の製造法を第２図に従
って説明する。Ｐ型のシリコン基板１を用い、拡散法に
より、受光面となる一方の主表面１１側に接合深さ０．
３ μｍ前後のｎ土層１３を形成し、ＰＮ接合Ｊを形
成する（第２図ａ）。この時、端部および裏面のｎ中層
はエツチング等により除去する。A method of manufacturing the solar cell element of the present invention having such a structure will be explained with reference to FIG. Using a P-type silicon substrate 1, a junction depth of 0.0 mm is formed on one main surface 11 side, which will become the light-receiving surface, by a diffusion method.
An N soil layer 13 of approximately 3 μm is formed to form a PN junction J (Fig. 2a). At this time, the n-middle layer at the end and back surface is removed by etching or the like.
次に裏面となる他方の主表面１２のＢＳＦ層形成部にレ
ジスト６をスクリーン印刷する（第２図ｂ）、、この後
に、常圧ＣＶＤ装置等により、Ｔｉ０ｚまたは、５ｎｏ
２の金属酸化膜４を成膜させる（第２図Ｃ）。この時の
金属酸化膜は１００Å以上の膜厚が必要である。Next, a resist 6 is screen-printed on the BSF layer forming portion of the other main surface 12, which will become the back surface (FIG. 2b). After this, Ti0z or 5no.
A metal oxide film 4 of No. 2 is formed (FIG. 2C). The metal oxide film at this time needs to have a thickness of 100 Å or more.
その後、レジスト６を除去する（第２図ｄ））。Thereafter, the resist 6 is removed (FIG. 2d)).
これによりパターニングされた金属酸化膜が形成される
。A patterned metal oxide film is thereby formed.
次に、裏面にＡｌペースト５を印刷しく第２図ｅ）、７
５０℃、３分間の熱処理を行う。この熱処理により、Ｂ
ＳＦ層となるｐ中層１５と、Ａｌの他方の電極５と金属
酸化膜４の界面にＢＳＲが同時に形成される（第２図ｆ
）。Next, print Al paste 5 on the back side (Fig. 2e), 7
Heat treatment is performed at 50°C for 3 minutes. Through this heat treatment, B
A BSR is simultaneously formed at the interface between the p-middle layer 15 that becomes the SF layer, the other Al electrode 5, and the metal oxide film 4 (FIG. 2 f)
).
その次に、受光面１１に一方の主電極２を形成し、さら
に反射防止膜３を形成することにより、第１図に示す太
陽電池素子が得られる。Next, one main electrode 2 is formed on the light-receiving surface 11, and an antireflection film 3 is further formed, thereby obtaining the solar cell element shown in FIG. 1.
太陽電池は、従来の太陽電池に比べて、より以上の変換
効率を得ることができる。また、スクリーン印刷法で形
成できるので、経済的にすぐれている。Solar cells can achieve higher conversion efficiency than conventional solar cells. Furthermore, since it can be formed by screen printing, it is economically advantageous.
拡散法にてｎ中層１３の形成を行っているが、イオン打
込み法でも同等の結果を得ることができる。Although the n-middle layer 13 is formed by a diffusion method, the same result can be obtained by an ion implantation method.
また、表面電極形成後に反射防止膜３を形成しているが
、反射防止膜形成後にファイヤースルーるが、プラズマ
ＣＶＤ、光ＣＶＤ装置又は蒸着装置等にて形成しても同
様の結果を得ることができる。In addition, although the antireflection film 3 is formed after the surface electrode is formed, it fires through after the antireflection film is formed, but the same result can be obtained even if it is formed using plasma CVD, photoCVD equipment, vapor deposition equipment, etc. can.
分離されたＢＳＦ層とＢＳＲ層のパターンは、レジスト
印刷の印刷パターンにより各種のパターンが可能である
。Various patterns are possible for the separated BSF layer and BSR layer depending on the printing pattern of resist printing.
本発明によれば、ＢＳＦとして機能するｐ中層とＢＳＲ
として機能する２層と金属酸化膜との界面が分離されて
いるため変換効率を高くすることができる。また電極形
成も容易となる。According to the present invention, the p-middle layer functioning as a BSF and the BSR
Since the interface between the two layers that function as a metal oxide film and the metal oxide film are separated, the conversion efficiency can be increased. Further, electrode formation becomes easy.
第１図は本発明太陽電池素子の一実施例を示す概断面図
、第２図は本発明太陽電池素子の製造工程図、第３図は
従来の太陽電池素子の概略路断面図である。
１・・・半導体基板、２・・・一方の主電極、３・・・
反射防止膜、４・・・金属酸化膜、５・・・他方の主電
極、１３・・・ｎ中層、１４・・・２層、Ｊ・・・ＰＮ
接合、１５・・・、ｐ中層。FIG. 1 is a schematic cross-sectional view showing one embodiment of the solar cell element of the present invention, FIG. 2 is a manufacturing process diagram of the solar cell element of the present invention, and FIG. 3 is a schematic cross-sectional view of a conventional solar cell element. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 2... One main electrode, 3...
Antireflection film, 4...Metal oxide film, 5...Other main electrode, 13...N middle layer, 14...2 layer, J...PN
Junction, 15..., p middle layer.
Claims (1)
表面に隣接する一方導電型の第１の半導体層と、他方の
主表面の一部及び第１の半導体層に隣接する第１の半導
体層より低不純物濃度を有する他方導電型の第２の半導
体層と、他方の主表面の残りの部分及び第２の半導体層
に隣接する第２の半導体層より高不純物濃度を有する他
方導電型の第３の半導層とを有する半導体基体、 半導体基体の一方の主表面の選択された個所にオーミッ
ク接触した第１の主電極、 半導体基体の他方の主表面において第２の半導体層の露
出面に設けた金属酸化膜、 半導体基体の他方の主表面において第３の半導体層の露
出面にオーミック接触した第２の主電極、 を具備することを特徴とする太陽電池素 子。 ２、特許請求の範囲第１項において、第３の半導体層が
Ａｌとシリコンとの合金層で形成されていることを特徴
とする太陽電池素子。 ３、特許請求の範囲第１項において、金属酸化膜がＳｎ
Ｏ＿２、ＴｉＯ＿２から選ばれたものであることを特徴
とする太陽電池素子。[Claims] 1. A pair of main surfaces located on opposite sides, a first semiconductor layer of one conductivity type adjacent to one main surface, a part of the other main surface and the first semiconductor a second semiconductor layer of the other conductivity type that has a lower impurity concentration than the first semiconductor layer adjacent to the second semiconductor layer; a semiconductor substrate having an impurity concentration and a third semiconductor layer of the other conductivity type; a first main electrode in ohmic contact with a selected location on one main surface of the semiconductor substrate; A solar cell characterized by comprising: a metal oxide film provided on the exposed surface of the second semiconductor layer; and a second main electrode in ohmic contact with the exposed surface of the third semiconductor layer on the other main surface of the semiconductor substrate. battery element. 2. The solar cell element according to claim 1, wherein the third semiconductor layer is formed of an alloy layer of Al and silicon. 3. In claim 1, the metal oxide film is Sn.
A solar cell element characterized in that it is selected from O_2 and TiO_2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63000398A JPH01179373A (en) | 1988-01-06 | 1988-01-06 | Solar cell element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63000398A JPH01179373A (en) | 1988-01-06 | 1988-01-06 | Solar cell element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01179373A true JPH01179373A (en) | 1989-07-17 |
| JPH0573357B2 JPH0573357B2 (en) | 1993-10-14 |
Family
ID=11472700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63000398A Granted JPH01179373A (en) | 1988-01-06 | 1988-01-06 | Solar cell element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01179373A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007119673A1 (en) * | 2006-04-14 | 2007-10-25 | Sharp Kabushiki Kaisha | Solar cell, solar cell module using the solar cell and method for manufacturing the solar cell module |
| DE112010001822T5 (en) | 2009-04-29 | 2012-06-14 | Mitsubishi Electric Corp. | SOLAR BATTERY CELL AND METHOD FOR THE PRODUCTION THEREOF |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4395583A (en) * | 1980-04-30 | 1983-07-26 | Communications Satellite Corporation | Optimized back contact for solar cells |
| JPS58157176A (en) * | 1982-03-15 | 1983-09-19 | Hitachi Ltd | Solar battery element |
| JPS629680A (en) * | 1985-07-08 | 1987-01-17 | Hitachi Ltd | Manufacture of solar cell |
-
1988
- 1988-01-06 JP JP63000398A patent/JPH01179373A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4395583A (en) * | 1980-04-30 | 1983-07-26 | Communications Satellite Corporation | Optimized back contact for solar cells |
| JPS58157176A (en) * | 1982-03-15 | 1983-09-19 | Hitachi Ltd | Solar battery element |
| JPS629680A (en) * | 1985-07-08 | 1987-01-17 | Hitachi Ltd | Manufacture of solar cell |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007119673A1 (en) * | 2006-04-14 | 2007-10-25 | Sharp Kabushiki Kaisha | Solar cell, solar cell module using the solar cell and method for manufacturing the solar cell module |
| DE112010001822T5 (en) | 2009-04-29 | 2012-06-14 | Mitsubishi Electric Corp. | SOLAR BATTERY CELL AND METHOD FOR THE PRODUCTION THEREOF |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0573357B2 (en) | 1993-10-14 |
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