JPS6289736A - Equipment for plasma treatment - Google Patents
Equipment for plasma treatmentInfo
- Publication number
- JPS6289736A JPS6289736A JP22949385A JP22949385A JPS6289736A JP S6289736 A JPS6289736 A JP S6289736A JP 22949385 A JP22949385 A JP 22949385A JP 22949385 A JP22949385 A JP 22949385A JP S6289736 A JPS6289736 A JP S6289736A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- vacuum chamber
- chamber
- processing apparatus
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は樹脂成形品のプラズマ処理装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a plasma processing apparatus for resin molded products.
゛ ポリプロピレン、ポリエチレンなどのオレフィン系
樹脂の成形品はその無極性などの性質に起因して塗膜密
着性などに劣るものである。Molded products made of olefin resins such as polypropylene and polyethylene have poor coating adhesion due to their non-polar properties.
そのため、これら樹脂成形品に、マイクロ波で空気、酸
素、アルゴン、ヘリウムなどのガスを励起してえられる
、いわゆるプラズマを照射して、樹脂成形品に表面改質
を施すことが行なわれている。Therefore, these resin molded products are subjected to surface modification by irradiating them with so-called plasma, which is obtained by exciting gases such as air, oxygen, argon, helium, etc. using microwaves. .
前記プラズマ処理はチャンバ内に被処理物を収容し、チ
ャンバ内を減圧状態にし、プラズマ発生器からのプラズ
マをチャンバ内に導入し、被処理物に照射することによ
って行なわれるが、被処理物をチャンバ内に定置した状
態で行なうと処理が不均一となるという問題があった。The plasma processing is performed by housing the object to be processed in a chamber, reducing the pressure inside the chamber, introducing plasma from a plasma generator into the chamber, and irradiating the object to be processed. There is a problem in that the treatment becomes non-uniform if the treatment is carried out in a fixed state within the chamber.
そのため、（１）被処理物を適宜の架台に装架し、該被
処理物をチャンバ内で公転および（または）自転させな
がらプラズマを照射する方法（特開昭５８−２０８３２
８号公報参照）および（′２Ｊチャンバ内にファンを設
け、該ファンによりプラズマを拡散する方法などが提案
されている。Therefore, (1) a method (Japanese Unexamined Patent Publication No. 58-20832
8) and ('2J), methods have been proposed in which a fan is provided in the chamber and the plasma is diffused by the fan.
しかしながら、前記方法のうち（１）被処理物を回転さ
せる方法は駆動装置を必要とし、装置が複雑化する、チ
ャンバ壁面と駆動装置可動部分とのシール性の確保が必
要であるなどの問題があり、また（′２Ｊファンにより
プラズマを拡散させる方法はファンにプラズマが衝突す
るため、プラズマが消滅するという問題がある。However, among the above methods, (1) the method of rotating the object to be processed requires a drive device, resulting in problems such as the complexity of the device and the need to ensure sealing between the chamber wall and the movable parts of the drive device. However, the method of diffusing plasma using a 2J fan has the problem that the plasma collides with the fan, causing the plasma to disappear.
本発明は、前記の点に鑑み、簡易な構成により被処理物
を均一に処理することのできるプラズマ処理装置を提供
することにある。In view of the above points, the present invention provides a plasma processing apparatus that can uniformly process a workpiece with a simple configuration.
本発明は、
（１）真空チャンバ内に収容した樹脂成形品にプラズマ
を照射して表面改質するためのプラズマ処理装置におい
て、真空チャンバ内に１個のプラズマシャワー管を設け
、かつ該プラズマシャワー管からの距離が大きいものほ
ど開口部の内径を大きくした複数個の排気口を真空チャ
ンバ周壁に設けたことを特徴とするプラズマ処理装置、
および
（２） ｊ３Ｌ空チャンバ内に収容した樹脂成形品にプ
ラズマを照射して表面改質するためのプラズマ処理装置
において、真空チャンバ周壁に１個の排気口を設け、か
つ該排気口から距離が大きいものほど吐出口の口径を大
きくした複数個のプラズマシャワー管を真空チャンバ内
に設けたことを特徴とするプラズマ処理装置に関する。The present invention provides: (1) In a plasma processing apparatus for irradiating a resin molded article housed in a vacuum chamber with plasma to modify the surface thereof, one plasma shower pipe is provided in the vacuum chamber, and the plasma shower A plasma processing apparatus characterized in that a plurality of exhaust ports are provided on the peripheral wall of a vacuum chamber, the inner diameter of which is larger as the distance from the tube increases.
and (2) j3L, in a plasma processing apparatus for irradiating a resin molded product housed in an empty chamber with plasma to modify its surface, one exhaust port is provided on the peripheral wall of the vacuum chamber, and the distance from the exhaust port is The present invention relates to a plasma processing apparatus characterized in that a plurality of plasma shower tubes are provided in a vacuum chamber, and the diameter of the discharge port is larger for the larger one.
［実施例］ つぎに図面に基づき本発明の詳細な説明する。[Example] Next, the present invention will be explained in detail based on the drawings.
第１図は本発明のプラズマ処理装置の一実施例を示す概
略説明図、第２図は第１図の（Ｘ）−（Ｘ）線拡大断面
図、第３〜４図は本発明のプラズマ処理装置の他の実施
例を示す概略説明図である。FIG. 1 is a schematic explanatory diagram showing one embodiment of the plasma processing apparatus of the present invention, FIG. 2 is an enlarged sectional view taken along the line (X)-(X) of FIG. 1, and FIGS. 3 and 4 are plasma processing apparatuses of the present invention. FIG. 3 is a schematic explanatory diagram showing another embodiment of the processing device.
第１〜４図において、（１）は被処理物を処理するため
の真空チャンバである。（２）は空気、酸素、アルゴン
、ヘリウムなどのガスボンベであり、ガスはボンベ（′
２Ｊから配管（３）を通してプラズマ発生器（４）に送
られ、そこでマイクロ波発生器（５）からのマイクロ波
によって励起されてプラズマ状態とされる。生成したプ
ラズマは、真空チャンバ内上部に設けられたプラズマシ
ャワー管（６）のプラズマ吐出口（７）からチャンバ（
１）内に導入され、被処理物（８）に照射される。（９
）はプラズマシャワー管（６）からの距離が大きくなる
ほど開口部の内径が大きくなるように設けられてなる複
数個の排気口である。該排気口（９）は、チャンバ（１
）内を所定の真空度に維持するための真空ポンプに接続
される。In FIGS. 1 to 4, (1) is a vacuum chamber for processing a workpiece. (2) is a gas cylinder for air, oxygen, argon, helium, etc.
From 2J, it is sent to a plasma generator (4) through a pipe (3), where it is excited by microwaves from a microwave generator (5) and turned into a plasma state. The generated plasma flows into the chamber (
1) and irradiates the object to be treated (8). (9
) are a plurality of exhaust ports provided such that the inner diameter of the opening increases as the distance from the plasma shower pipe (6) increases. The exhaust port (9) is connected to the chamber (1
) is connected to a vacuum pump to maintain a predetermined degree of vacuum inside.
前記プラズマ処理装置において、排気口（９）は複数個
設けられていると共にプラズマシャワー管（６）から離
れた位置にある排気口（９）はど開口部の内径が大きく
なるように構成されている。そのためプラズマは複数方
向に分散するとともに各方向における排気口（９）まで
の移動に伴う抵抗が等しくなるため、プラズマ吐出口（
７１から照射されたプラズマは真空チャンバ（１）内に
おいて均一に分散され、被処理物（８）を真空チャンバ
（１）内に定置した状態でも均一処理が可能となる。In the plasma processing apparatus, a plurality of exhaust ports (9) are provided, and the exhaust ports (9) located away from the plasma shower pipe (6) are configured to have a large inner diameter. There is. Therefore, the plasma is dispersed in multiple directions and the resistance associated with movement to the exhaust port (9) in each direction is equal, so the plasma discharge port (9) is equalized.
The plasma irradiated from 71 is uniformly dispersed within the vacuum chamber (1), and uniform processing is possible even when the object to be processed (8) is placed in the vacuum chamber (1).
排気口（９）の位置および個数は、プラズマ吐出口（７
）の位置および個数、被処理物（８）の個数、形状およ
び大きさなどに合わせて適宜選定すれはよい。The position and number of the exhaust ports (9) are the same as the plasma discharge ports (7).
), and the number, shape, and size of the objects (8) to be processed.
排気口（９）の最小内径と最大内径との比の値は、排気
口（９）の位置および個数により異なるが概ね２〜ＩＯ
が目安である。The value of the ratio of the minimum inner diameter to the maximum inner diameter of the exhaust port (9) varies depending on the position and number of the exhaust ports (9), but is approximately 2 to IO.
is the standard.
第２図に示される実施例では真空チャンバ（１）の周方
向に７個の排気口（９）が設けられており、（９ｄ）、
（９ｃ）、（９ｂ）、（９ａ）の順に開口部の内径が大
きくなっている。In the embodiment shown in FIG. 2, seven exhaust ports (9) are provided in the circumferential direction of the vacuum chamber (1), (9d),
The inner diameter of the opening increases in the order of (9c), (9b), and (9a).
また第３図に示される実施例では真空チャンバ（１）の
軸方向に７個の排気口（９）が設けられておリ、（９ｅ
）、（９ｒ）、（９ｇ）、（９ｈ）の順に開口部の内径
が大きくなっている。Further, in the embodiment shown in FIG. 3, seven exhaust ports (9) are provided in the axial direction of the vacuum chamber (1).
), (9r), (9g), and (9h), the inner diameter of the opening increases in this order.
さらに第４図に示される実施例では真空チャンバ（１）
の端部（１０）に垂直方向に左右合計８個の排気口（９
）が設けられており、（９１）、（９ｊ）、（９ｋ）、
（９１）の順に開口部の内径が大きくなっている。Furthermore, in the embodiment shown in FIG.
A total of eight exhaust ports (9
) are provided, (91), (9j), (9k),
The inner diameter of the opening increases in the order of (91).
なお第２〜４図に示される実施例における排気口（９）
の配置は適宜組み合わせて用いてもよい。Note that the exhaust port (9) in the embodiment shown in Figs.
The arrangement may be used in combination as appropriate.
以上の説明において本発明のプラズマ処理装置は、１個
のプラズマシャワー管（６）と該プラズマシャワー管（
６）からの距離が大きいものほど開口部の内径を大きく
した複数個の排気口（９）とから構成されてなるが、そ
れとは逆に１個の排気口（９）と、該排気口（９）から
の距離が大きいものほど吐出口（刀の口径を大きくした
複数個のブ′ラズマシャワー管（６）とからなる構成に
よっても前述したごとく真空チャンバ（１）内のプラズ
マの分布を均一化することができる。In the above description, the plasma processing apparatus of the present invention includes one plasma shower tube (6) and the plasma shower tube (
The exhaust port (9) is composed of a plurality of exhaust ports (9), the inner diameter of which is larger as the distance from the exhaust port (9) increases. 9) The larger the distance from the discharge port, the more uniform the plasma distribution within the vacuum chamber (1) can be, as described above, by the configuration consisting of multiple plasma shower tubes (6) with larger diameters. can be converted into
そのばあいプラズマシャワー管（６）の位置および個数
は、被処理物（８）の個数、形状および太きさなどに合
わせて適宜選定すればよい。In that case, the position and number of the plasma shower tubes (6) may be appropriately selected according to the number, shape, thickness, etc. of the objects to be treated (8).
プラズマ吐出口（７）の最小口径と最大口径との比の値
は、プラズマシャワー管（６）の位置および個数により
異なるが概ね ２〜１０が目安である。The value of the ratio of the minimum diameter to the maximum diameter of the plasma discharge port (7) varies depending on the position and number of plasma shower tubes (6), but is generally between 2 and 10.
本発明は以上説明したとおり、真空チャンバ内に１個の
プラズマシャワー管を設け、かつ該プラズマシャワー管
からの距離が大きいものほど内径を大きくした複数個の
排気口を真空チャンバ周壁に設ける、または真空チャン
バ周壁に１個の排気口を設け、かつ該排気口からの距離
が大きいものほど吐出口の口径を大きくした複数個のプ
ラズマシャワー管とを設けるという簡単な構成により、
被処理物を定置した状態で均一に処理できるという効果
があり、装置の簡略化を可能にし、それによりコストダ
ウンを図ることができる。As explained above, the present invention includes providing one plasma shower pipe in a vacuum chamber, and providing a plurality of exhaust ports on the peripheral wall of the vacuum chamber, the inner diameter of which increases as the distance from the plasma shower pipe increases, or With a simple configuration in which one exhaust port is provided on the peripheral wall of the vacuum chamber, and a plurality of plasma shower pipes are provided in which the diameter of the discharge port is larger as the distance from the exhaust port is greater,
This has the effect of uniformly processing the object in a stationary state, making it possible to simplify the apparatus and thereby reduce costs.
第１図は本発明のプラズマ処理装置の一実施例を示す概
略説明図、第２図は第１図の（Ｘ）−（Ｘ）線拡大断面
図、第３〜４図は本発明のプラズマ処理装置の他の実施
例を示す概略説明図である。
（図面の主要符号）
（１）：真空チャンバ
（４）：プラズマ発生器
（６）：プラズマシャワー管
＋８１ ： Ｍ処理物
（９）：排気口
才２図FIG. 1 is a schematic explanatory diagram showing one embodiment of the plasma processing apparatus of the present invention, FIG. 2 is an enlarged sectional view taken along the line (X)-(X) of FIG. 1, and FIGS. 3 and 4 are plasma processing apparatuses of the present invention. FIG. 3 is a schematic explanatory diagram showing another embodiment of the processing device. (Main symbols in the drawing) (1): Vacuum chamber (4): Plasma generator (6): Plasma shower tube +81: M-processed object (9): Exhaust port Figure 2
Claims (1)
照射して表面改質するためのプラズマ処理装置において
、真空チャンバ内に１個のプラズマシャワー管を設け、
かつプラズマシャワー管からの距離が大きいものほど開
口部の内径を大きくした複数個の排気口を真空チャンバ
周壁に設けたことを特徴とするプラズマ処理装置。 ２ 真空チャンバ内に収容した樹脂成形品にプラズマを
照射して表面改質するためのプラズマ処理装置において
、真空チャンバ周壁に１個の排気口を設け、かつ該排気
口からの距離が大きいものほど吐出口の口径を大きくし
た複数個のプラズマシャワー管を真空チャンバ内に設け
たことを特徴とするプラズマ処理装置。[Scope of Claims] 1. In a plasma processing apparatus for surface modification of a resin molded article housed in a vacuum chamber by irradiating plasma with it, one plasma shower pipe is provided in the vacuum chamber,
A plasma processing apparatus characterized in that a plurality of exhaust ports are provided on the peripheral wall of the vacuum chamber, the inner diameter of which is larger as the distance from the plasma shower pipe increases. 2. In a plasma processing device for irradiating a resin molded product housed in a vacuum chamber with plasma to modify its surface, one exhaust port is provided on the peripheral wall of the vacuum chamber, and the distance from the exhaust port is larger. A plasma processing apparatus characterized in that a plurality of plasma shower tubes each having a large diameter discharge port are provided in a vacuum chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22949385A JPS6289736A (en) | 1985-10-15 | 1985-10-15 | Equipment for plasma treatment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22949385A JPS6289736A (en) | 1985-10-15 | 1985-10-15 | Equipment for plasma treatment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6289736A true JPS6289736A (en) | 1987-04-24 |
Family
ID=16893027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22949385A Pending JPS6289736A (en) | 1985-10-15 | 1985-10-15 | Equipment for plasma treatment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6289736A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0658416A2 (en) * | 1993-11-23 | 1995-06-21 | Dyconex Patente Ag | Method for texturing polymer foils |
| JP2000073029A (en) * | 1998-08-26 | 2000-03-07 | Nitto Denko Corp | Adhesive member and its production |
| US6531069B1 (en) * | 2000-06-22 | 2003-03-11 | International Business Machines Corporation | Reactive Ion Etching chamber design for flip chip interconnections |
-
1985
- 1985-10-15 JP JP22949385A patent/JPS6289736A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0658416A2 (en) * | 1993-11-23 | 1995-06-21 | Dyconex Patente Ag | Method for texturing polymer foils |
| EP0658416A3 (en) * | 1993-11-23 | 1995-07-26 | Heinze Dyconex Patente | |
| JP2000073029A (en) * | 1998-08-26 | 2000-03-07 | Nitto Denko Corp | Adhesive member and its production |
| US6531069B1 (en) * | 2000-06-22 | 2003-03-11 | International Business Machines Corporation | Reactive Ion Etching chamber design for flip chip interconnections |
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