JPS6286724A - Semiconductor manufacturing device - Google Patents

Semiconductor manufacturing device

Info

Publication number
JPS6286724A
JPS6286724A JP60227200A JP22720085A JPS6286724A JP S6286724 A JPS6286724 A JP S6286724A JP 60227200 A JP60227200 A JP 60227200A JP 22720085 A JP22720085 A JP 22720085A JP S6286724 A JPS6286724 A JP S6286724A
Authority
JP
Japan
Prior art keywords
reticle
light
vacuum chamber
reduction projection
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60227200A
Other languages
Japanese (ja)
Inventor
Junji Miyazaki
宮崎　順二
Shigeo Uotani
魚谷　重雄
Akira Kawai
河合　晃
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60227200A priority Critical patent/JPS6286724A/en
Publication of JPS6286724A publication Critical patent/JPS6286724A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

Abstract

PURPOSE:To reduce any foreign matters bonding on a reticle inside a contractive projection exposure device by a method wherein a base with a reticle loading means, an inspecting means checking any foreign matters bonded on the reticle and a contractive projection optical system are provided in a chamber with exhausting means. CONSTITUTION:The titled semiconductor manufacturing device is composed of a vacuum chamber 9 and a vacuum pump 10 to exhaust the air inside the vacuum chamber 9. The vacuum chamber 9 is provided with light transmitting exposure windows 11, 12 made of e.g. quartz glass. A reticle 2 is illuminated with the light from a light source 1 through the exposure window 11 while a wafer 5 is illuminated with the light from a contractive projection lens 4 through the other exposure window 12. In such a constitution of the semiconduc tor manufacturing device, any foreign matter in the vacuum chamber 9 can be discharged outside together with the air by exhausting the air inside the vacuum chamber 9 using the vacuum pump 10.

Description

【発明の詳細な説明】 〔産業上の利用分野１ この発明は半導体製造装置に関し、特に、縮小投影露光
装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application 1] The present invention relates to a semiconductor manufacturing apparatus, and particularly to a reduction projection exposure apparatus.

［従来の技術］ 第２図は従来の縮小投影露光装置の構成を示す図である
。第２図において、従来の縮小投影露光装置は、光源１
と、レティクル用Ｘ−Ｙステージ３と、縮小投影レンズ
４と、ウェハ用Ｘ−Ｙステージ６と、レティクル用Ｏ−
ダ７と異物検査ｌ１１８とが設けられる。[Prior Art] FIG. 2 is a diagram showing the configuration of a conventional reduction projection exposure apparatus. In FIG. 2, the conventional reduction projection exposure apparatus has a light source 1.
, a reticle X-Y stage 3, a reduction projection lens 4, a wafer X-Y stage 6, and a reticle O-
A foreign matter inspection l118 is provided.

光源１は、たとえば紫外線を発生するものであり、−例
として超高圧水銀ランプが用いられる。The light source 1 is, for example, one that generates ultraviolet light, for example an ultra-high pressure mercury lamp is used.

レティクル用Ｘ−Ｙステージ３は、レティクル（マスク
）２を支持するとともに、レティクル２の位置合わせを
行なうためのものである。レティクル２には、拡大され
たパターンが予め形成される。縮小投影レンズ４は、レ
ティクル２のバターンを縮小して、ウェハ５上に投影す
るものである。The reticle XY stage 3 is used to support the reticle (mask) 2 and to align the reticle 2. An enlarged pattern is formed on the reticle 2 in advance. The reduction projection lens 4 reduces the pattern of the reticle 2 and projects it onto the wafer 5.

ウェハ用Ｘ−Ｙステージ６は、ウェハ５を支持するとと
もに、露光ごとにウェハを一定距離だけ移動させるもの
である。レティクル用ローダ７は、レディクル２をレテ
ィクル用Ｘ−Ｙステージ３に載置するためのものである
。異物検査！！１８はレティクル２に異物が付着してい
るか否かを検査するものである。The wafer XY stage 6 supports the wafer 5 and moves the wafer a certain distance for each exposure. The reticle loader 7 is for mounting the reticle 2 on the reticle XY stage 3. Foreign body inspection! ! Reference numeral 18 is for inspecting whether or not foreign matter is attached to the reticle 2.

次に、従来の縮小投影露光装置の動作について説明する
。レディクル２は、図示しないレティクル受口にセット
されると、まず異物検査１１８によって、異物が付着し
ていないかどうかが検査される。異物の付着の有無が検
査された後、レティクル２はレティクル用ローダ７によ
って、レティクル用Ｘ−Ｙステージ３上にセットされる
。次に、レティクル用Ｘ−Ｙステージ３を移動させて、
レティクル２とウェハ５との位置合わせを行なう。Next, the operation of the conventional reduction projection exposure apparatus will be explained. When the reticle 2 is set in a reticle receptacle (not shown), it is first inspected by a foreign object inspection 118 to see if there is any foreign object attached thereto. After the presence or absence of foreign matter has been inspected, the reticle 2 is set on the reticle XY stage 3 by the reticle loader 7. Next, move the reticle X-Y stage 3,
The reticle 2 and the wafer 5 are aligned.

次に、超高圧水眼ランプ１により、レディクル用Ｘ−Ｙ
ステージ３上のレティクル２に光が照射される。レティ
クル２を通過した光は縮小投影レンズ４の一端に導かれ
、縮小投影レンズ４によりパターンが一定の縮小率で縮
小される。縮小投影レンズ４の他端からの光はウェハ用
Ｘ−Ｙステージ６上にセットされたウェハ５に到達する
。Next, using the ultra-high pressure water eye lamp 1,
Light is irradiated onto the reticle 2 on the stage 3. The light passing through the reticle 2 is guided to one end of the reduction projection lens 4, and the pattern is reduced by the reduction projection lens 4 at a constant reduction rate. The light from the other end of the reduction projection lens 4 reaches the wafer 5 set on the wafer XY stage 6.

このようにして、ウェハ５上には縮小されたパターンが
投影され転写される。同一のレティクル２を用い、ウェ
ハ５を移動させながら露光を繰返すことにより、ウェハ
５上には多数の同一パターンが形成される。In this way, the reduced pattern is projected and transferred onto the wafer 5. By repeating exposure using the same reticle 2 while moving the wafer 5, many identical patterns are formed on the wafer 5.

［発明が解決しようとする問題点］ 従来の縮小投影露光装置は、以上のように構成されてい
るので、異物検査１ｌＩ８により異物の付着の有無が検
査された後、レティクル用ローダ７によりレティクル用
Ｘ−Ｙステージ３上にセットされる間やレティクル用Ｘ
−Ｙステージ３上に置かれている間に、装置内部で発生
した異物がレティクル２上に新たに付着する可能性があ
る。[Problems to be Solved by the Invention] Since the conventional reduction projection exposure apparatus is configured as described above, after the presence or absence of foreign matter is inspected by the foreign matter inspection 1lI8, the reticle loader 7 While being set on the X-Y stage 3 and the reticle X
- While the reticle 2 is placed on the Y stage 3, there is a possibility that foreign matter generated inside the apparatus may newly adhere to the reticle 2.

このような異物により、欠陥のあるパターンがウェハ上
に形成さ机る。Such foreign particles cause defective patterns to be formed on the wafer.

このため、従来は、予備的な露光を行なって、異物の付
着の有無を検査するようにしているので、スループット
（処１１ｆｔりの低下を招いている。For this reason, in the past, preliminary exposure was performed to inspect the presence or absence of foreign matter, which resulted in a decrease in throughput (by about 11 feet).

それゆえに、この発明は上述のような問題点を解消する
ためになされたもので、縮小投影露光装置内部でのレテ
ィクルへの異物の付着を減少させることを目的とする。Therefore, the present invention has been made to solve the above-mentioned problems, and an object of the present invention is to reduce the adhesion of foreign matter to the reticle inside a reduction projection exposure apparatus.

Ｅ問題点を解決するための手段］ この発明にかかる半導体製造装置は、少なくとも、レテ
ィクルの位１合わせをするためのレティクル支持台と、
レティクル支持台上にレティクルを載置するための載置
手段と、レティクルに異物が付着しているか否かを検査
する検査手段と、ウェハ上に縮小投影を行なうための縮
小投影光学系とを容器内に設け、該容器内の空気を排気
手段により排気するようにしたものである。Means for Solving Problem E] A semiconductor manufacturing apparatus according to the present invention includes at least a reticle support for aligning a reticle;
A container includes a mounting means for mounting a reticle on a reticle support, an inspection means for inspecting whether or not foreign matter is attached to the reticle, and a reduction projection optical system for performing reduction projection on a wafer. The container is provided inside the container, and the air inside the container is exhausted by an exhaust means.

［作用］ この発明における容器は、排気手段により排気されるの
で、容器内の異物が減少するため、容器内に設置される
レティクルへの異物の付着は減少する。[Operation] Since the container according to the present invention is evacuated by the exhaust means, the amount of foreign matter inside the container is reduced, so that the amount of foreign matter attached to the reticle installed inside the container is reduced.

［実施例］ 以下、この発明の一実施例について説明する。[Example] An embodiment of the present invention will be described below.

第１図はこの発明の一実施例の半導体製造装置の構成を
示す図である。第１図に示す半導体製造！Ａ置は、第２
図に示す従来の装置と下記の点を除いて同一の１成であ
るので、同一部分には同一の参照符号を付して説明を省
略する。FIG. 1 is a diagram showing the configuration of a semiconductor manufacturing apparatus according to an embodiment of the present invention. Semiconductor manufacturing shown in Figure 1! A position is the second
Since it is the same component as the conventional device shown in the figure except for the following points, the same parts are given the same reference numerals and the explanation will be omitted.

９ど真空チャンバ９内の空気を排気するための真空ポン
プ１０どが設けられる。真空チャンバ９には、たとえば
石英ガラスからなる露光窓１１．１２が設けられる。露
光窓１１．１２は、光を通過する窓である。光源１から
の光は露光窓１１を介し１、レディクル２上に与えられ
、縮小投影レンズ４からの光はｎ光窓１２を介して、ウ
ェハ５上に与えられる。A vacuum pump 10 for evacuating the air in the vacuum chamber 9 is provided. The vacuum chamber 9 is provided with exposure windows 11, 12 made of quartz glass, for example. The exposure windows 11.12 are windows through which light passes. The light from the light source 1 is applied to the radicle 2 through the exposure window 11, and the light from the reduction projection lens 4 is applied to the wafer 5 through the n-light window 12.

上述のようにａ成された半導体製造装置において、真空
チャンバ９内の空気を真空ポンプ１０で排気することに
より、真空チトンバ内の異物は気体どどもに外部に排出
される。In the semiconductor manufacturing apparatus constructed as described above, by evacuating the air in the vacuum chamber 9 with the vacuum pump 10, foreign matter in the vacuum chamber is discharged to the outside as gas.

なお、上述の半導体製造装置において、レティクル２を
水平方向にセットしてもよいが、レティクル用Ｘ−Ｙス
テージ３を縦型にし、レティクル２を垂直に立Ｃたまま
セットできるようにしてもよい。このようにした場合に
は、レティクル２への異物の付着がさらに減少する。In the semiconductor manufacturing apparatus described above, the reticle 2 may be set in a horizontal direction, but the reticle X-Y stage 3 may be of a vertical type so that the reticle 2 can be set while standing vertically. . In this case, attachment of foreign matter to the reticle 2 is further reduced.

［発明の効果コ 以上のように、この発明によれば、少なくとも、レティ
クルの位置合わせをするためのレティクル支持台と、レ
ティクル支持台上にレティクルを載置するための載置手
段と、レティクルに異物が付着しているか否かを検査す
る検査手段と、ウェハ上に縮小投影を行なうための縮小
投影光学系とを容器内に設け、該容器の空気を排気手段
により排気するようにしたので、該容器内の異物が減少
するため、半導体製造ａｍ内部でのレティクルへの異物
の付着は減少する。[Effects of the Invention] As described above, according to the present invention, there is provided at least a reticle support for positioning the reticle, a mounting means for placing the reticle on the reticle support, and a reticle for positioning the reticle. An inspection means for inspecting whether foreign matter is attached or not and a reduction projection optical system for performing reduction projection onto the wafer are provided in the container, and the air in the container is exhausted by the exhaust means. Since the amount of foreign matter in the container is reduced, the amount of foreign matter adhering to the reticle inside the semiconductor manufacturing device is reduced.

【図面の簡単な説明】[Brief explanation of drawings]

第１図はこの発明の一実施例の半導体製３！！装置の構
成を示す図である。第２図は従来の縮小投影露光装置の
構成を示す図である。 図において、１は光源、２はレティクル、３はレティク
ル用ｘ−Ｙステージ、４は縮小投影レンズ、５はウェハ
、６はウェハ用Ｘ−Ｙスデージ、７はレティクル用ロー
ダ、８は異物検査機、９は真空チｔ／ンバ、１０は真空
ポンプ、１１および１２は露光窓を示す。 なａ３、図中、同一符号は同一、または相当部分を示す
。FIG. 1 shows a semiconductor 3! according to an embodiment of the present invention. ! FIG. 2 is a diagram showing the configuration of the device. FIG. 2 is a diagram showing the configuration of a conventional reduction projection exposure apparatus. In the figure, 1 is a light source, 2 is a reticle, 3 is an X-Y stage for the reticle, 4 is a reduction projection lens, 5 is a wafer, 6 is an X-Y stage for the wafer, 7 is a reticle loader, and 8 is a foreign matter inspection machine. , 9 is a vacuum chamber, 10 is a vacuum pump, and 11 and 12 are exposure windows. In the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】 予め拡大されたパターンを有するレティクルに光源から
の光を照射し、前記レティクルを介して得られるパター
ンを縮小して、ウェハ上に投影するような縮小投影露光
を行なう半導体製造装置において、 容器および前記容器内の空気を排気する排気手段を備え
、 前記容器には、少なくとも、 前記光源からの光が照射される領域に設けられ、かつ移
動自在であって、前記レティクルの位置合わせをするた
めのレティクル支持台と、前記レティクル支持台上に前
記レティクルを載置するための載置手段と、 前記レティクルに異物が付着しているか否かを検査する
検査手段と、 前記ウェハ上に縮小投影を行なうための縮小投影光学系
とが設けられていることを特徴とする半導体製造装置。[Scope of Claims] Semiconductor manufacturing that performs reduction projection exposure in which a reticle having a pre-enlarged pattern is irradiated with light from a light source, the pattern obtained through the reticle is reduced and projected onto a wafer. The device includes a container and an exhaust means for exhausting air in the container, and the container is provided at least in a region irradiated with light from the light source, and is movable, and is movable to adjust the position of the reticle. a reticle support stand for alignment; a mounting means for placing the reticle on the reticle support stand; an inspection means for inspecting whether or not foreign matter is attached to the reticle; A semiconductor manufacturing apparatus characterized in that a reduction projection optical system for performing reduction projection is provided.
JP60227200A 1985-10-11 1985-10-11 Semiconductor manufacturing device Pending JPS6286724A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60227200A JPS6286724A (en) 1985-10-11 1985-10-11 Semiconductor manufacturing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60227200A JPS6286724A (en) 1985-10-11 1985-10-11 Semiconductor manufacturing device

Publications (1)

Publication Number Publication Date
JPS6286724A true JPS6286724A (en) 1987-04-21

Family

ID=16857061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60227200A Pending JPS6286724A (en) 1985-10-11 1985-10-11 Semiconductor manufacturing device

Country Status (1)

Country Link
JP (1) JPS6286724A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6222609B1 (en) 1996-11-12 2001-04-24 Nec Corporation Reduction projection aligner free from reaction product tarnishing photo-mask and method for transferring pattern image through the photo-mask
US8610613B2 (en) 2011-02-18 2013-12-17 Renesas Electronics Corporation Semiconductor integrated circuit device
CN110658682A (en) * 2018-06-28 2020-01-07 上海微电子装备（集团）股份有限公司 Gas bath cavity structure, gas bath device and photoetching equipment

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6222609B1 (en) 1996-11-12 2001-04-24 Nec Corporation Reduction projection aligner free from reaction product tarnishing photo-mask and method for transferring pattern image through the photo-mask
US8610613B2 (en) 2011-02-18 2013-12-17 Renesas Electronics Corporation Semiconductor integrated circuit device
US8994569B2 (en) 2011-02-18 2015-03-31 Renesas Electronics Corporation Semiconductor integrated circuit device
US9300313B2 (en) 2011-02-18 2016-03-29 Renesas Electronics Corporation Semiconductor integrated circuit device
CN110658682A (en) * 2018-06-28 2020-01-07 上海微电子装备（集团）股份有限公司 Gas bath cavity structure, gas bath device and photoetching equipment
CN110658682B (en) * 2018-06-28 2021-04-02 上海微电子装备（集团）股份有限公司 Gas bath cavity structure, gas bath device and photoetching equipment

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