JPS6267546A - Manufacture of flexible mask - Google Patents

Manufacture of flexible mask

Info

Publication number
JPS6267546A
JPS6267546A JP60207366A JP20736685A JPS6267546A JP S6267546 A JPS6267546 A JP S6267546A JP 60207366 A JP60207366 A JP 60207366A JP 20736685 A JP20736685 A JP 20736685A JP S6267546 A JPS6267546 A JP S6267546A
Authority
JP
Japan
Prior art keywords
film
flexible
flexible mask
resist
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60207366A
Other languages
Japanese (ja)
Inventor
Keiji Fujimagari
藤曲　啓志
Kenichi Kobayashi
健一 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP60207366A priority Critical patent/JPS6267546A/en
Publication of JPS6267546A publication Critical patent/JPS6267546A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electronic Switches (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To easily manufacture a flexible mask and to attain repeated use by forming a metallic film on a flexible transparent film by spatter or deposition, and executing etching and the peel-off processing of a resist after a desired resist pattern is formed on the metallic film. CONSTITUTION:A metallic plate is stuck to the transparent film (by applying tension, only the transparent film is set to a spatter device or a deposition device and coated in a thickness of 1000Angstrom -2000Angstrom ), the resist is applied tr the metallic film. Then, after the resist pattern is formed, etching is applied. In terms of a flexible mask produced in such a way, its surface property is excellent, and a Cr film will not develop separation, etc. due to the repeated use.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は曲面型サーマルヘッド等の曲面を有するハイブ
リット素子に対するホトリソエツチングを行う際に用い
るマスクの製造が専荀に行えるようにしたフレキシブル
マスクの製造方法に関する。Detailed Description of the Invention [Industrial Field of Application] The present invention provides a flexible mask that can be used exclusively for manufacturing a mask used when performing photolithography on a hybrid element having a curved surface such as a curved thermal head. Relating to a manufacturing method.

Ｃ従来の技術〕 従来より、絶縁基板上へ導体パターン等を形成するに際
しては、ホトリソエツチング技術が用いられている。こ
の技術を用いてプリント基板等を作る際には、まず、絶
縁基板上に電極等を蒸着あるいはスパッタ法で形成のの
ち、レジストを塗布し、所定のパターン（暗部と透明部
より成る）を透明板上に形成したマスクを密着させ、こ
のマスクを介して光を基板面に照射してパターンを形成
している。C. Prior Art Conventionally, photolithography has been used to form conductive patterns and the like on insulating substrates. When using this technology to make printed circuit boards, etc., first, electrodes are formed on an insulating substrate by vapor deposition or sputtering, then a resist is applied and a predetermined pattern (consisting of dark and transparent areas) is made transparent. A mask formed on a plate is brought into close contact with the substrate, and light is irradiated onto the substrate surface through this mask to form a pattern.

この場合、マスクは平板であって可ｊＱ性がないため、
曲面を存する基板上にパターンを形成しようとすると、
曲面部とマスクの密着度が悪いため、パターンを高精一
度に作ることができない。In this case, the mask is a flat plate and has no flexibility, so
When trying to form a pattern on a substrate with a curved surface,
Because of the poor adhesion between the curved surface and the mask, it is not possible to create a pattern with high precision all at once.

この不具合を解消するためにマスクをフレキシブルにし
た特開昭５９−２３０７７０号が提案されている。In order to solve this problem, Japanese Patent Laid-Open No. 59-230770 has been proposed in which the mask is made flexible.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかし、従来のフレキシブルマスクによれば、その製造
方法が容易でないため、実用化力く難しいという問題が
ある。However, the conventional flexible mask has a problem in that it is difficult to put into practical use because its manufacturing method is not easy.

〔問題点を解決するための手段及び作用〕本発明は上記
に鑑みてなされたものであり、フレキシブルマスクの製
造を簡単にするため、透明フィルムに金属板を貼付（ま
たは張力をかけてスパッタ装置或いは蒸着装置内に透明
フィルムのみをセットし、１，０００人〜２，０００人
程度の厚みに着膜）し、この金属膜面上にレジストを塗
布し、ついでレジストパターンを形成ののちエンチング
を施すようにしたフレキシブルマスクの製造方法を提供
するものである。[Means and effects for solving the problems] The present invention has been made in view of the above, and in order to simplify the production of flexible masks, a metal plate is attached to a transparent film (or a metal plate is applied with tension and sputtering equipment is used). Alternatively, only a transparent film is set in the vapor deposition equipment, and a film is deposited to a thickness of about 1,000 to 2,000 layers), a resist is applied on the metal film surface, and then a resist pattern is formed and then etched. The present invention provides a method for manufacturing a flexible mask.

〔実施例〕〔Example〕

以下、本発明によるフレキシブルマスクの製造方法を詳
細に説明する。Hereinafter, a method for manufacturing a flexible mask according to the present invention will be described in detail.

本発明におけるフレキシブルマスクの製造工程は、大別
して次の４工程より成り立っている。The manufacturing process of the flexible mask in the present invention can be roughly divided into the following four steps.

■　透明フィルム上に金属膜を形成する。■ Forming a metal film on a transparent film.

ポリエチレン・テレフタレート（ＰＥＩ）による可撓性
の透明フィルム（透明膜）上に、高周波マグネトロンス
パッタ装置を用いてクローム（Ｃｒ）を１　、５００人
の厚みに着膜する。ＰＥＴフィルムをスパッタ装置にセ
ットするに際しては、張力をかけながら行１う。尚、Ｓ
ｕＳまたはＡ１などの平滑な面を有する金属板にＰＥＴ
フィルムを貼付してスパッタ装置または蒸着装置内にセ
ットし、貼付けがなされていない面に、Ｃｒ膜を形成す
るようにしても良い。A chromium (Cr) film is deposited to a thickness of 1,500 mm on a flexible transparent film made of polyethylene terephthalate (PEI) using a high frequency magnetron sputtering device. When setting the PET film in the sputtering device, do so while applying tension. Furthermore, S
PET on a metal plate with a smooth surface such as uS or A1
Alternatively, a film may be attached and set in a sputtering device or a vapor deposition device, and a Cr film may be formed on the surface to which the film is not attached.

■　金属膜（Ｃｒ、膜）上にレジストを形成する。(2) Form a resist on the metal film (Cr, film).

■の工程によって形成されたＣｒ膜上にレジストを塗布
する。A resist is applied onto the Cr film formed in step (2).

■　次に、■によるレジスト面に対し、平面な形状のガ
ラスホトマスク　（原版）をアライメントして露光（又
は、パターンゼネレータによるフラッシュ露光）を行い
、更に現像を行うことにより、原版と同一のレジストパ
ターンをＣ１膜上に形成する。■Next, a flat glass photomask (original plate) is aligned and exposed (or flash exposure using a pattern generator) to the resist surface created by is formed on the C1 film.

■　透明フィルム上に金属膜によるパターンを形成する
。■ Forming a pattern using a metal film on a transparent film.

前記■による工程によってレジスタパターンが形成され
たＣ、、膜を、硝酸第二セリウムアンモニウム水溶液ニ
よってエツチングしたのち・不要なレジストを剥離する
ことによって、ＰＥＴフィルム上に０１パターンを形成
する。After etching the C film on which the resist pattern has been formed by the step (2) using an aqueous ceric ammonium nitrate solution, an unnecessary resist is peeled off to form a 01 pattern on the PET film.

以上によってフレキシブルマスクが完成し、このように
して作られたフレキシブルマスクは表面性に優れ、繰り
返し使用してもＣ，膜に／Ｓガレ等を生じさせることが
ない。Through the above steps, a flexible mask is completed, and the flexible mask made in this way has excellent surface properties and does not cause any /S peeling or the like on the C and film even after repeated use.

〔発明の効果〕〔Effect of the invention〕

以上説明した通り、本発明のフレキシブルマスクの製造
方法によれば、フレキシブルマスクを簡単に製造できる
とともに、繰り返し使用が可能となるため、実用性に優
れたフレキシブルマスクを得ることができる。As explained above, according to the flexible mask manufacturing method of the present invention, a flexible mask can be easily manufactured and can be used repeatedly, so a flexible mask with excellent practicality can be obtained.

特許出願人　　富士ゼロ・７クス株式会社代理人　弁理
士　　　松　原　伸　２ 同　同　　村木清司 同　同　　上島淳− 同　同　　酒井宏明Patent Applicant Fuji Zero/7x Co., Ltd. Agent Patent Attorney Shin Matsubara 2 Seiji Muraki Jun Ueshima - Hiroaki Sakai

Claims (3)

【特許請求の範囲】[Claims] （１）可撓性の透明フィルム上にスパッタまたは蒸着に
よって金属膜を形成し、この金属膜上の所望のレジスト
パターンを形成ののち、エッチング及びレジストの剥離
処理を行うことを特徴とするフレキシブルマスクの製造
方法。(1) A flexible mask characterized by forming a metal film on a flexible transparent film by sputtering or vapor deposition, forming a desired resist pattern on this metal film, and then performing etching and resist peeling treatment. manufacturing method. （２）前記透明フィルムは、ポリエチレン・テレフタレ
ート（ＰＥＴ）であることを特徴とする特許請求の範囲
第１項記載のフレキシブルマスクの製造方法。(2) The method for manufacturing a flexible mask according to claim 1, wherein the transparent film is polyethylene terephthalate (PET). （３）前記金属膜の材料はクローム（Ｃｒ）であること
を特徴とする特許請求の範囲第１項記載のフレキシブル
マスクの製造方法。(3) The method for manufacturing a flexible mask according to claim 1, wherein the material of the metal film is chromium (Cr).
JP60207366A 1985-09-19 1985-09-19 Manufacture of flexible mask Pending JPS6267546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60207366A JPS6267546A (en) 1985-09-19 1985-09-19 Manufacture of flexible mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60207366A JPS6267546A (en) 1985-09-19 1985-09-19 Manufacture of flexible mask

Publications (1)

Publication Number Publication Date
JPS6267546A true JPS6267546A (en) 1987-03-27

Family

ID=16538539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60207366A Pending JPS6267546A (en) 1985-09-19 1985-09-19 Manufacture of flexible mask

Country Status (1)

Country Link
JP (1) JPS6267546A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018535446A (en) * 2016-01-27 2018-11-29 エルジー・ケム・リミテッド Film mask, manufacturing method thereof, and pattern forming method using the same
US10969686B2 (en) 2016-01-27 2021-04-06 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby
US11029596B2 (en) 2016-01-27 2021-06-08 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018535446A (en) * 2016-01-27 2018-11-29 エルジー・ケム・リミテッド Film mask, manufacturing method thereof, and pattern forming method using the same
US10969677B2 (en) 2016-01-27 2021-04-06 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask
US10969686B2 (en) 2016-01-27 2021-04-06 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby
US11029596B2 (en) 2016-01-27 2021-06-08 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby

Similar Documents

Publication Publication Date Title
JP2744826B2 (en) Patterning methods and products
EP0095209A3 (en) Method of forming a resist mask resistant to plasma etching
JPS5669835A (en) Method for forming thin film pattern
JPS637476B2 (en)
JPS6267546A (en) Manufacture of flexible mask
KR100273784B1 (en) Shadow mask and method of manufacturing the same
JP2761390B2 (en) Method for manufacturing photomask with double-sided pattern
JPS60132323A (en) Mask for x-ray exposure
JP3168091B2 (en) Three-dimensional circuit formation method
JPS5492527A (en) Manufacture of metal foil having apertures
JP3259417B2 (en) Method for producing thin metal layer pattern, film for pattern formation, and film capacitor
JPH0348498B2 (en)
JP2000305283A (en) Production of transfer plate and transfer plate
JPS5710989A (en) Pattern manufacture for jusephson-junction element
KR100226054B1 (en) Method for forming patterns on a thin film using a shadow mask
JPH01154060A (en) Production of photomask
JPS612156A (en) Manufacture of mask for photofabrication
JPS6379958A (en) Mask for vapor deposition and its production
JPH0461611A (en) Production of thin-film magnetic head
JPS56130751A (en) Manufacture of mask
JPS5951157B2 (en) Manufacturing method of thin film pattern
TWI294758B (en) Method for manufacturing flexible printed circuits
JPS61224713A (en) Formation of conductor pattern
JPH03203393A (en) Manufacture of wiring board
JPS5646228A (en) Manufacture of mask for x rays exposure