JPS6255653A - Production of photomask - Google Patents
Production of photomaskInfo
- Publication number
- JPS6255653A JPS6255653A JP60195229A JP19522985A JPS6255653A JP S6255653 A JPS6255653 A JP S6255653A JP 60195229 A JP60195229 A JP 60195229A JP 19522985 A JP19522985 A JP 19522985A JP S6255653 A JPS6255653 A JP S6255653A
- Authority
- JP
- Japan
- Prior art keywords
- film
- transparent conductive
- transparent
- transparent insulating
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、ＩＣ等の［回路、液晶等を用いた表示素子な
どの電子部品、電子機器の製造に使用されるフォトリソ
グラフィ一工程で必要なフォトマスクの製造方法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to the photolithography process used in the production of electronic components such as circuits such as ICs, display elements using liquid crystals, etc., and electronic devices. The present invention relates to a method for manufacturing a mask.
従来の技術
透明基板上に金属薄ｖ！（以下「金属膜」と表記する）
により所定のパターンを形成したフォトマスクにＪ３い
ては、静電的な帯電や放電によって引き起こされる金属
膜の割れなどの問題を回避するために、透明基板と金ｎ
膜の間に透明導電膜が設けられている。例えば、特開昭
５７−８８０４４３Ｅ３公報に記載の方法によれば、第
３図（ａ）に示すように、透明基板１上に透明導電ｒ！
２を真空蒸着、スパッター等の方法により形成し、さら
にこの透明導電膜２上にエツチング等によりパターン化
した遮光金属膜３を形成するものである。Conventional technology Thin metal v! on a transparent substrate! (hereinafter referred to as "metal film")
In order to avoid problems such as cracking of the metal film caused by electrostatic charging and discharge, the photomask with a predetermined pattern formed by
A transparent conductive film is provided between the films. For example, according to the method described in Japanese Unexamined Patent Publication No. 57-880443E3, as shown in FIG. 3(a), transparent conductive r!
2 is formed by a method such as vacuum evaporation or sputtering, and a light-shielding metal film 3 patterned by etching or the like is further formed on this transparent conductive film 2.
また、フォトマスクの別な製造方法として、特開昭５６
−１１６０３４号公報に記載のものがあるが、この方法
は、第３図（ｂ）に示すように、透明基板１上にイオン
注入により導電性の表面層４を形成させたのち、パター
ン化した遮光金ＰＡ膜３を形成させたものである。In addition, as another method for manufacturing photomasks,
There is a method described in Japanese Patent No. 116034, but this method involves forming a conductive surface layer 4 on a transparent substrate 1 by ion implantation, and then patterning it, as shown in FIG. 3(b). A light-shielding gold PA film 3 is formed.
発明が解決しようとする問題点
しかしながら、第３図（ａ）に示す方法では、透明導電
膜上の金属膜をパターン化するに際し、透明導電膜が酸
化インジウム、酸化スズ等の金属酸化物を材料にしてい
るために、十分なエツチングの選択性を得にくく、金ｍ
膜の不要部分除去と同時にその下にある透明導電膜もエ
ツチング作用を受は変質したりあるいは消失したりとい
う問題がある。Problems to be solved by the invention However, in the method shown in FIG. Because of this, it is difficult to obtain sufficient etching selectivity, and gold
There is a problem in that when unnecessary portions of the film are removed, the underlying transparent conductive film is also affected by the etching action and is subject to deterioration or disappearance.
また、第３図（ｂ）に示す方法では、透明基板にイオン
注入により導電性の表面層を形成するので、この表面層
は物理的に強固ではあるが、十分に低い抵抗値を得るこ
とが困難である。In addition, in the method shown in Figure 3(b), a conductive surface layer is formed on the transparent substrate by ion implantation, so although this surface layer is physically strong, it is difficult to obtain a sufficiently low resistance value. Have difficulty.
問題点を解決するための手段
上記問題点を解決するために、本発明によるフォトマス
クの製造方法は、石英やガラスなどの絶縁性透明基板上
に透明導電膜を形成し、前記透明導電膜−ヒに透明絶縁
膜を形成した後、この透明絶縁膜を部分的に除去してパ
ターン化し、このパターン化した透明絶縁膜上及び前記
透明導電膜の露出部分上に金ＲｒｌＡを形成した後、こ
の金属膜を部分的に除去してパターン化するものである
。Means for Solving the Problems In order to solve the above problems, a method for manufacturing a photomask according to the present invention includes forming a transparent conductive film on an insulating transparent substrate such as quartz or glass; After forming a transparent insulating film on H, this transparent insulating film is partially removed and patterned, and gold RrlA is formed on the patterned transparent insulating film and the exposed portion of the transparent conductive film. The metal film is partially removed and patterned.
作用
以上の方法によれば、金属膜の不要部分をエツチングし
除去する際に、この除去される部分の下には透明絶縁膜
が形成されているため、透明導電膜が直接エツチング作
用を受けることは−ない。また、金属膜と透明絶縁膜と
では一般にエツチングの選択比を十分にとることが可能
−であるので、金属膜のパターン化の際のエツチングで
浸食され下層の透明導電膜が露出することは完全に阻止
できる。また、金属膜の必要部分の下方では、透明絶縁
膜がパターン化の際に除去されているので、金属膜と透
明導電膜との接続が確保され、十分に帯電を防止できる
ものである。Effect According to the method described above, when the unnecessary portion of the metal film is etched and removed, since the transparent insulating film is formed under the removed portion, the transparent conductive film is not directly subjected to the etching action. Yes, no. Furthermore, since it is generally possible to obtain a sufficient etching selectivity between the metal film and the transparent insulating film, the underlying transparent conductive film is completely prevented from being eroded by etching during patterning of the metal film and exposing the underlying transparent conductive film. can be prevented. Further, since the transparent insulating film is removed under the necessary portion of the metal film during patterning, the connection between the metal film and the transparent conductive film is ensured, and charging can be sufficiently prevented.
実施例
以下、本発明の実施例を第１図及び第２図に基づき説明
する。EXAMPLE Hereinafter, an example of the present invention will be explained based on FIGS. 1 and 2.
第１図は本発明によるフォトマスクの製造方法を示して
おり、第１図（ａ）において、１０は透明絶縁性基板で
、たとえばコーニング社製＃ ７７４０などから成る。FIG. 1 shows a method of manufacturing a photomask according to the present invention. In FIG. 1(a), numeral 10 denotes a transparent insulating substrate made of, for example, #7740 manufactured by Corning Corporation.
この基板１０上にスパッター法により透明導電膜の一例
であるＩＴＯ膜１１を形成する。ＩＴＯ膜１１の製膜に
際しては、真空槽内にＡｒガスおよび０２ガスを流量比
２０：１で導入し、ターゲットは１ｎ２０ｘ ・Ｓｎ
Ｏ２の酸化物ターゲットを用い１．基板温度はランプ加
熱で２００℃に設定し、直流にて４００Ｗのパワーを投
入してスパッターを行なう。膜厚１０００人程度のＩＴ
ＯＷｉｌｌ（シート抵抗は約１０００／ａｍ）を形成し
た後、真空を破ることなく透明絶縁膜の一例である５ｉ
Ｏ２Ｗｉ１２を形成する。スパッター装置内には２個の
ターゲットが装着できるようになっており、真空を保持
した状態で貢種の薄膜を連続して形成できるため、界面
におけるダスト等の影響を排除でき、良好な膿を形成で
きる。５ｉ０２膜１２の’１１１９に際しては、Ａｒガ
スと０２ガスの流量比を３０＝２とし、ターゲットはＳ
ｉＯ２を用い、基板温度は同様の２００℃で、無線周波
数（ＲＦ＞にて３５０Ｗのパワーを投入してスパッター
を行なった。膜厚６０Ｇ八程度の５ｉＯ２ｒＩＡ１２を
形成した後、サンプルを真空槽より取り出す。An ITO film 11, which is an example of a transparent conductive film, is formed on this substrate 10 by sputtering. When forming the ITO film 11, Ar gas and 02 gas were introduced into the vacuum chamber at a flow rate ratio of 20:1, and the target was 1n20x ·Sn.
1. Using an oxide target of O2. The substrate temperature was set to 200° C. by lamp heating, and sputtering was performed by applying direct current power of 400 W. IT with a thickness of about 1000 people
After forming OWill (sheet resistance is approximately 1000/am), 5i, which is an example of a transparent insulating film, is formed without breaking the vacuum.
Form O2Wi12. Two targets can be installed inside the sputtering device, and a thin film of the target species can be continuously formed while maintaining a vacuum, eliminating the influence of dust at the interface and ensuring good pus removal. Can be formed. For '1119 of the 5i02 film 12, the flow rate ratio of Ar gas and 02 gas was set to 30=2, and the target was S.
Using iO2, sputtering was carried out at the same substrate temperature of 200°C and a power of 350W at radio frequency (RF).After forming 5iO2rIA12 with a film thickness of about 60G8, the sample was taken out from the vacuum chamber. .
第１図（ｂ）は、前記ＳｉＯ２膜１２をフォトリソグラ
フィー■程によりパターン化した状態を示すものである
。全面にＳｉＯ２膜１２膜形２されている段階（第１図
（ａ））でレジスＩ・、たとえばコダック社製ＫＭＲ−
７４７を塗布し、霧光、現像した後に、フッ化アンモニ
ウム（Ｎ８４ Ｆ＞とフッ化水素酸（ＨＦ）の混合液に
より５ｉ０２膜１２の不要部分をエツチングし、レジス
トを除去する。FIG. 1(b) shows a state in which the SiO2 film 12 has been patterned by photolithography step (3). At the stage where the entire surface is coated with 12 SiO2 films (FIG. 1(a)), resist I.
After coating 747, fogging, and developing, unnecessary portions of the 5i02 film 12 are etched with a mixed solution of ammonium fluoride (N84 F>) and hydrofluoric acid (HF), and the resist is removed.
第１図（ｃ）は、ＳｉＯ２膜１２膜形２−ン化後に金属
膜の一例であるＣｒ膜１３を形成した状態を示すもので
ある。Ｃｒ膜１３は自公転式のスパッター装置を用い、
基板温度は室温にて直流で３５０Ｗのパワーを投入し形
成する。Ｃｒ膜１３は密着性が良好で、反射率も高いの
で遮光膜としての本実施例によるフォトマスクにおける
利用では８００人程匪でよい。また、パターン化された
３ｉ０２膜１２の段差部での被覆性に関しては、自公転
式の装置で製膜しているので問題はない。FIG. 1(c) shows a state in which a Cr film 13, which is an example of a metal film, is formed after the SiO2 film 12 is formed into a 2-layer structure. The Cr film 13 is formed using a rotation-revolution type sputtering device.
The substrate temperature is room temperature and a direct current power of 350 W is applied to form the substrate. Since the Cr film 13 has good adhesion and high reflectance, it can be used in the photomask according to this embodiment as a light-shielding film at a cost of about 800 ml. Furthermore, there is no problem with the coverage of the patterned 3i02 film 12 at the stepped portions since the film is formed using a rotation-revolution type device.
第１図（ｄ）は、フォトリソグラフィーエ稈により前記
Ｃｒ１ｌＲ１３をパターン化した状態を示すものである
。遮光膜パターン形成のためにＣｒ膜１３の不要部分・
をエツチングする際に用いるエツチング液は硝酸セリウ
ムアンモニウム（（Ｎ＋−１４＞２Ｃｅ （ＮＯ３）
ｓ ＞、 過塩素Ｍ （トＩ ＣＡ Ｏ＋）。FIG. 1(d) shows the Cr11R13 patterned by photolithography. Unnecessary parts of the Cr film 13 for forming the light shielding film pattern.
The etching solution used for etching is cerium ammonium nitrate ((N+-14>2Ce (NO3)
s >, perchlorine M (TOICA O+).
および水（１」２０）の混合液である。and water (1"20).
第２図は以上の方法により最終的に得られたフォトマス
クを示したものである。FIG. 2 shows a photomask finally obtained by the above method.
発明の効果
以上述べたごとく、本発明の方法によれば、静電的な帯
電、放電にともなう破損を防ぐための透明導電膜が、遮
光金属膜をパターン化する際におけるエツチング作用か
ら保護でき、低抵抗の透明導電膜を有するフォトマスク
を得ることができるという効果がある。Effects of the Invention As described above, according to the method of the present invention, the transparent conductive film for preventing damage caused by electrostatic charging and discharge can be protected from the etching effect when patterning the light-shielding metal film. This has the effect that a photomask having a transparent conductive film with low resistance can be obtained.
第１図（ａ）−（ｄ）は本発明の一実施例に係るフォト
マスクの製造方法を段階的に示す四面図、第２図は同製
造方法により得られたフｙｔ ｔ−マスクの断面図、第
３図（ａＨｂ）はそれぞれｖ４なる従来方法により得ら
れたフォトマスクを示″！ｌ断面図である。
１０・・・透明基板、１１・・・ＩＴＯ膜（透明導電膜
）、１２・・・ＳｉＯ２膜（透明絶縁膜）、１３・・・
Ｃｒ膜（金属膜）
代理人 森 本 八 弘
第１図
第２図FIGS. 1(a)-(d) are four side views showing step-by-step a method for manufacturing a photomask according to an embodiment of the present invention, and FIG. 2 is a cross-section of a photomask obtained by the same manufacturing method. Figure 3 (aHb) is a cross-sectional view of a photomask obtained by the conventional method v4, respectively. 10...Transparent substrate, 11...ITO film (transparent conductive film), 12 ...SiO2 film (transparent insulating film), 13...
Cr film (metal film) Agent Yasuhiro Morimoto Figure 1 Figure 2
Claims (1)
を形成し、前記透明導電膜上に透明絶縁膜を形成した後
、この透明絶縁膜を部分的に除去してパターン化し、こ
のパターン化した透明絶縁膜上及び前記透明導電膜の露
出部分上に金属膜を形成した後、この金属膜を部分的に
除去してパターン化することよりなるフォトマスクの製
造方法。 ２、透明導電膜はＩＴＯをスパッターすることにより形
成し、透明絶縁膜はＳｉＯ＿２をスパッターすることよ
り形成し、前記ＩＴＯと前記ＳｉＯ＿２のスパッターは
同一真空槽内にて真空を破ることなく連続して形成する
ようにした特許請求の範囲第１項に記載のフォトマスク
の製造方法。 ３、金属膜としてクロムを用いる特許請求の範囲第１項
または第２項に記載のフォトマスクの製造方法。[Claims] 1. After forming a transparent conductive film on an insulating transparent substrate such as quartz or glass, and forming a transparent insulating film on the transparent conductive film, this transparent insulating film is partially removed. A method for producing a photomask, comprising forming a metal film on the patterned transparent insulating film and the exposed portion of the transparent conductive film, and then partially removing the metal film and patterning it. . 2. The transparent conductive film is formed by sputtering ITO, and the transparent insulating film is formed by sputtering SiO_2, and the sputtering of ITO and SiO_2 is performed continuously in the same vacuum chamber without breaking the vacuum. A method for manufacturing a photomask according to claim 1, wherein the photomask is formed by: 3. The method for manufacturing a photomask according to claim 1 or 2, in which chromium is used as the metal film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60195229A JPS6255653A (en) | 1985-09-03 | 1985-09-03 | Production of photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60195229A JPS6255653A (en) | 1985-09-03 | 1985-09-03 | Production of photomask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6255653A true JPS6255653A (en) | 1987-03-11 |
Family
ID=16337621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60195229A Pending JPS6255653A (en) | 1985-09-03 | 1985-09-03 | Production of photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6255653A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0485814A (en) * | 1990-07-26 | 1992-03-18 | Fujitsu Ltd | Formation of mask |
| JP2006184399A (en) * | 2004-12-27 | 2006-07-13 | Toppan Printing Co Ltd | Exposure mask blank, method for manufacturing the same, exposure mask, method for manufacturing color filter for liquid crystal display device, and color filter for the liquid crystal display device |
-
1985
- 1985-09-03 JP JP60195229A patent/JPS6255653A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0485814A (en) * | 1990-07-26 | 1992-03-18 | Fujitsu Ltd | Formation of mask |
| JP2006184399A (en) * | 2004-12-27 | 2006-07-13 | Toppan Printing Co Ltd | Exposure mask blank, method for manufacturing the same, exposure mask, method for manufacturing color filter for liquid crystal display device, and color filter for the liquid crystal display device |
| JP4635604B2 (en) * | 2004-12-27 | 2011-02-23 | 凸版印刷株式会社 | Method for manufacturing exposure mask blank, exposure mask, method for manufacturing color filter for liquid crystal display device, and color filter for liquid crystal display device |
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