JPS5950053B2 - Photo engraving method - Google Patents
Photo engraving methodInfo
- Publication number
- JPS5950053B2 JPS5950053B2 JP52055627A JP5562777A JPS5950053B2 JP S5950053 B2 JPS5950053 B2 JP S5950053B2 JP 52055627 A JP52055627 A JP 52055627A JP 5562777 A JP5562777 A JP 5562777A JP S5950053 B2 JPS5950053 B2 JP S5950053B2
- Authority
- JP
- Japan
- Prior art keywords
- photosensitive resin
- pattern
- photoresist
- positive
- negative
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
【発明の詳細な説明】
本発明は精度の高い微細パターンを容易に実現出来る写
真蝕刻方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photoetching method that can easily realize fine patterns with high precision.
従来よりパターンを形成するためのマスクは写真蝕刻方
法により形成されている。Conventionally, masks for forming patterns have been formed by photolithography.
この従来の写真蝕刻方法として“）ネガ型ホトレジスト
、例えばＫＴＦＲを用いたケミカルエッチング法、（Ｂ
）ポジ型ホトレジスト、例えばＡＺ１３５０Ｊを用いた
ケミカルエッチング法、（Ｏホトレジストを用いて蒸着
リフトオフした金属膜を用いるケミカルエッチング法等
がある。しかしながら（２）による方法においてはネガ
型ホトレジストは解像度が悪く微細バター 。ンの形成
が困難で、現在のところ３ｍｍ程度のパターン形成が限
度である。また（Ｂ）による方法においては、ポジ型ホ
トレジストがネガ型ホトレジストに比べて解像度が優れ
ているので微細パターン形成が容易で１ｍｍ位迄のパタ
ーン形成が可能である。しかしポジ型ホトレジストは基
板との密着力が弱くエッチング中ホトレジストが剥離し
たり、サイドエッチが生じたりして精度の面での欠点が
あつた。更に（Ｏによる方法においては次に述べる様な
欠点を有する。これをＡｌ配線パターン形成工程を例に
とり説明する。第１図ａに示す様にまずＳｉ基板１上に
ＳｉＯ。Conventional photo-etching methods include ") chemical etching method using negative photoresist, such as KTFR," (B
) A chemical etching method using a positive type photoresist, such as AZ1350J, and a chemical etching method using a metal film deposited and lifted off using an O photoresist.However, in the method (2), the negative type photoresist has poor resolution and fine details It is difficult to form butter patterns, and the current limit is to form a pattern of about 3 mm.Also, in the method (B), since positive photoresist has superior resolution compared to negative photoresist, it is difficult to form fine patterns. It is easy to process, and it is possible to form patterns up to about 1 mm.However, positive photoresists have weak adhesion to the substrate, resulting in the photoresist peeling off during etching and side etching, resulting in drawbacks in terms of accuracy. Furthermore, the method using (O) has the following drawbacks.This will be explained using an example of an Al wiring pattern forming process.As shown in FIG. 1A, SiO is first deposited on a Si substrate 1.
膜２を形成し、その上にホトレジスト３を塗布し、ホト
マスク４を密着させ紫外光線を上面よりあてホトレジス
ト３の一部を露光させる。次に同図ｂの如く溶剤にてホ
トレジスト３を選択的に除去してホトレジストパタニン
３ａを形成する。その後同図ｃの如くホトレジストパタ
ーン３ａと一部露出させたＳｉＯ。膜２上にホトレジス
トパターン３ａより十分薄いＡｌ膜５を蒸着する。次に
同図ｄの様にホトレジスト剥離液でホトレジストパター
ン３ａを除去しＡｌ配線５ａを形成する。上記方法はホ
トレジスト３ａのテーパー部分のＡｌ膜５の厚さが非常
に薄くなることを利用した方法であるからＡｌ膜５の厚
さがホトレジストパターン３ａより厚くなつたり、又微
細パターンを形成するためにホトレジスト３の厚みを薄
くした場合にはリフトオフ法は非常に困難になる。A film 2 is formed, a photoresist 3 is applied thereon, a photomask 4 is brought into close contact with the film 2, and a portion of the photoresist 3 is exposed by applying ultraviolet light from above. Next, as shown in FIG. 3B, the photoresist 3 is selectively removed using a solvent to form a photoresist pattern 3a. Thereafter, as shown in FIG. An Al film 5 that is sufficiently thinner than the photoresist pattern 3a is deposited on the film 2. Next, as shown in FIG. 4D, the photoresist pattern 3a is removed using a photoresist stripper to form an Al wiring 5a. The above method takes advantage of the fact that the thickness of the Al film 5 at the tapered portion of the photoresist 3a becomes very thin, so the thickness of the Al film 5 becomes thicker than the photoresist pattern 3a, and also because a fine pattern is formed. If the thickness of the photoresist 3 is made thinner, the lift-off method becomes extremely difficult.
以上の如くこの方法はホトレジスト３と金属蒸着膜５の
厚みの相対差を大きくしなければならず、更に基板１上
に段差があり、この段差を交差して配線がなされる場合
短絡、断線が生じやすくなる等の欠点があり製造歩留り
の向上は望めない。本発明は上記欠点にかんがみ提案さ
れたもので非常に高精度な微細パターンの形成を容易に
するものである。As described above, this method requires a large relative difference in the thickness of the photoresist 3 and the metal vapor deposited film 5, and furthermore, there is a step on the substrate 1, and if wiring is made to cross this step, short circuits and disconnections may occur. There are drawbacks such as an increased tendency to occur, and an improvement in manufacturing yield cannot be expected. The present invention has been proposed in view of the above-mentioned drawbacks, and is intended to facilitate the formation of very precise fine patterns.
以下図面に基づいて本発明の実施例を説明する。Embodiments of the present invention will be described below based on the drawings.
第２図は本発明の一実施例を示すものである。同図にお
いて、基体１１，例えばシリコン基板１２上に酸化シリ
コン膜１３を有する基体１１上の全面にポジ型ホトレジ
ストを例えばＡＺｌ３５Ｏで膜厚２ｍｍ程度塗布してポ
ジ型ホトレジスト層１４を形成し、さらにこのポジ型ホ
トレジスト層１４上にホトマスク１５を密着させて上部
より紫外光線１６を照射し、前記ポジ型ホトレジスト層
１４の一部を露光するＡ。FIG. 2 shows an embodiment of the present invention. In the same figure, a positive photoresist layer 14 is formed by applying a positive photoresist, for example, AZl35O, to a thickness of about 2 mm on the entire surface of a substrate 11 having a silicon oxide film 13 on a silicon substrate 12, and further this layer is coated with a positive photoresist layer 14. Step A: A photomask 15 is brought into close contact with the positive photoresist layer 14, and ultraviolet light 16 is irradiated from above to expose a portion of the positive photoresist layer 14.
次にホトマスク１５を取り去つてから、第１の溶剤にて
前記ポジ型ホトレジスト層１４の一部を除去してポジ型
ホトレジスト．パターン１４ａを形成する。その後、ネ
ガ型ホトレジストを全面に塗布しネガ型ホトレジスト層
１７を形成し、このネガ型ホトレジスト層１７にホトマ
スク１８を密着させる。なお、この時に用いるホトマス
ク１８は前記ホトマスク１５と同一の２ものでもよく、
また、別のマスク、例えば前記ホトマスク１５とパター
ン要素は同じでその開口部寸法が近似なものでもよい。
そして、上部より紫外光線１６を照射し、ネガ型ホトレ
ジスト層１７の一部を露光するＢ。次に、ホトマスク１
８を取ιり去つてから第２の溶剤を用いてネガ型ホトレ
ジスト層１７の一部を除去し、ネガ型ホトレジストパタ
ーン１７ａを形成するとともに、ポジ型ホトレジストパ
ターン１４ａの一部を露出する。そして上部より紫外光
線１６を照射して、前記ポジ型５ホトレジストパターン
１４ａおよびネガ型ホトレジストパターン１７ａを強く
露光するＣＯその後、前記第１の溶剤を用いてポジ型ホ
トレジストパターン１４ａのみを除去すると、上方向に
広がるテーパーを有し、かつ頂上部にオーバーハングダ
のある断面構造のネガ型ホトレジストパターン１７ａの
みが残るＤＯこの状態で酸化シリコン膜１３をエツチン
グしようとする場合には、このネガ型ホトレジストパタ
ーン１７ａをマスクとして通常のエツチング法を用いて
行えばよい。Next, the photomask 15 is removed, and a portion of the positive photoresist layer 14 is removed using a first solvent to form a positive photoresist layer. A pattern 14a is formed. Thereafter, a negative type photoresist is applied to the entire surface to form a negative type photoresist layer 17, and a photomask 18 is brought into close contact with this negative type photoresist layer 17. Note that the photomask 18 used at this time may be the same as the photomask 15,
Further, another mask, for example, the photomask 15 and the pattern element may be the same and have similar opening dimensions.
Then, in step B, a part of the negative photoresist layer 17 is exposed by irradiating ultraviolet light 16 from above. Next, photomask 1
After removing 8, a part of the negative photoresist layer 17 is removed using a second solvent, thereby forming a negative photoresist pattern 17a and exposing a part of the positive photoresist pattern 14a. Then, UV light 16 is irradiated from above to strongly expose the positive type 5 photoresist pattern 14a and the negative type photoresist pattern 17a.After that, only the positive type photoresist pattern 14a is removed using the first solvent. Only the negative photoresist pattern 17a with a cross-sectional structure that tapers in the direction and has an overhang at the top remains. When attempting to etch the silicon oxide film 13 in this state, this negative photoresist pattern 17a is This may be done using a normal etching method using 17a as a mask.
また、リフトオフ法を用いて基体１１上に配線を行う場
合には第２図Ｄの工程に引き続いて、全面に金属膜、例
えばアルミ膜１９を蒸着するＥＯその後、ホトレジスト
剥離液、例えば商品名Ｊ一１００を用いてネガ型ホトレ
ジストパターン１７ａを除去してアルミ配線１９ａを完
成するＦＯ次に本発明の他の実施例について第３図とと
もに説明する。In addition, when wiring is performed on the substrate 11 using the lift-off method, following the process shown in FIG. Next, another embodiment of the present invention will be described with reference to FIG. 3.
まず、前実施例と同様に基体１１上にポジ型ホトレジス
ト層１４を形成し、その上にホトマスク１５を密着させ
、紫外光線１６を照射して、ポジ型ホトレジスト層１４
の一部を露光するＡ。First, as in the previous embodiment, a positive photoresist layer 14 is formed on a substrate 11, a photomask 15 is closely attached thereon, and ultraviolet light 16 is irradiated to form a positive photoresist layer 14.
A to expose a part of.
なお、この露光は紫外光線１６に限定されるものではな
くＸ線、電子ビーム等を用いて行つてもよい゜
その後、第１の溶剤を用いて前記ポジ型ホトレジスト層
１４の一部を除去現像処理してポジ型ホトレジストパタ
ーン１４ａを形成する。Note that this exposure is not limited to ultraviolet light 16, and may be performed using X-rays, electron beams, etc. After that, a part of the positive photoresist layer 14 is removed and developed using a first solvent. A positive photoresist pattern 14a is formed by processing.
なお、露光条件や、現像条件をかえたり、さらに現像後
の処理を、例えば１３０℃、１０分間程度のベーキング
をすることによりポジ型ホトレジストパターン１４ａの
テーパー角度をなだらかにする方がよい。この後、全面
にネガ型ホトレジストを塗布し、ネガ型ホトレジスト層
１７を形成するＢＯなお、ポジ型ホトレジストパターン
１４ａ上のネガ型ホトレジスト層１７の膜厚は、酸化シ
リコン膜１３上のネガ型ホトレジスト層１７の膜厚より
十分薄い方が良い。次に、酸素ガスプラズマを用いて、
例えば高周波出力１５０Ｗ、ガス圧０．５Ｔ０汀で、前
記ネガ型ホトレジスト層１７を仝面均一にエツチングす
る。その後、紫外光線１６で十分露光するＣ。なお、プ
ラズマエツチング工程と、この露光工程との順序は逆と
なつても良い。その後、前記第１の溶剤を用いて前記ポ
ジ型ホトレジストパターン１４ａを除去すると、断面構
造が逆台形状のネガ型ホトレジストパターン１７ｂのみ
が残在する。この状態から酸化シリコン膜１３をエツチ
ングしても良いし、また、第２図Ｅ，Ｆに示すと同様に
、リフトオフ法を用いて配線形成をしても良い゜
上記第１、第２の各実施例においてポジ型ホトレジスト
で、あらかじめ、微細パターンを形成しておき、この微
細パターンをネガ型ホトレジストに反転することにより
、ポジ型ホトレジストの微細パターン形成が容易である
という長所と、ネガ型ホトレジストの基体に対する密着
力が強いという長所の両方を有効に利用している。Note that it is better to make the taper angle of the positive photoresist pattern 14a gentle by changing the exposure conditions and development conditions, or by performing post-development processing such as baking at 130° C. for about 10 minutes. After that, a negative photoresist is applied to the entire surface to form a negative photoresist layer 17. Note that the film thickness of the negative photoresist layer 17 on the positive photoresist pattern 14a is the same as that of the negative photoresist layer on the silicon oxide film 13. It is better that the film thickness is sufficiently thinner than the film thickness of No. 17. Next, using oxygen gas plasma,
For example, the negative photoresist layer 17 is etched uniformly on all sides using a high frequency output of 150 W and a gas pressure of 0.5T0. Thereafter, C is fully exposed to ultraviolet light 16. Note that the order of the plasma etching step and this exposure step may be reversed. Thereafter, when the positive photoresist pattern 14a is removed using the first solvent, only the negative photoresist pattern 17b having an inverted trapezoidal cross-sectional structure remains. The silicon oxide film 13 may be etched from this state, or wiring may be formed using the lift-off method as shown in FIGS. 2E and F. In the example, by forming a fine pattern in advance with a positive photoresist and inverting this fine pattern to a negative photoresist, there is an advantage that it is easy to form a fine pattern with a positive photoresist, and an advantage of the negative photoresist is that it is easy to form a fine pattern. The advantages of strong adhesion to the substrate are effectively utilized.
従つて、基板に対する密着力が強く、サイドエツチが生
じにくχしかも微細なホトレ．ジストパターンを形成で
きる。また、一方の第１の実施例において形成されるレ
ジストパターン１７ａの断面構造は上方向に広がるテー
パーおよび頂上部のオーバーハングを有したものであり
、他方の第２の実施例において形成されるレジストパタ
ーン１７ｂの断面構造は逆台形状であり、共に、リフト
オフ法を用いて配線を行なう基体１１の段差を交差して
配線がなされても短絡や断線が生じない。Therefore, the adhesion to the substrate is strong and side etching is less likely to occur. Able to form a mist pattern. Furthermore, the cross-sectional structure of the resist pattern 17a formed in the first embodiment has an upwardly expanding taper and an overhang at the top, whereas the cross-sectional structure of the resist pattern 17a formed in the second embodiment The cross-sectional structure of the pattern 17b is an inverted trapezoid, and even if the wiring is made by using the lift-off method to cross the step of the base 11, no short circuit or disconnection will occur.
以上のように本発明によれば、ポジ型ホトレジストの微
細パターン形成が容易であるという長所と、ネガ型ホト
レジストの密着力が強いという長所とを有効に利用して
いるので基体上に形成されるネガ型ホトレジストパター
ンは微細で密着力の強いものとなり、しかも、このネガ
型ホトレジストパターンは略逆台形状の断面構造となつ
ているので、特に基体上に配線を行なう際に、リフトオ
フ法が効果的に行なわれ、形成された配線が、基体に段
差が存在していても短絡や断線を生ずることはない。As described above, according to the present invention, the advantages of positive photoresist in that it is easy to form fine patterns and the advantage of negative photoresist in that it has strong adhesion are effectively utilized. The negative photoresist pattern is fine and has strong adhesion, and since this negative photoresist pattern has an almost inverted trapezoidal cross-sectional structure, the lift-off method is particularly effective when wiring on the substrate. The formed wiring will not be short-circuited or disconnected even if there is a step on the substrate.
第１図ａ−ｄは従来の写真蝕刻方法を示す工程第２図Ａ
−Ｄは本発明の一実施例の写真蝕刻方法を示す工程図、
第２図Ｅ，Ｆは同方法の利用例を示す工程図、第３図Ａ
−Ｄは本発明の他の実施例の写真蝕刻方法を示す工程図
である。
１１・・・・・・基体、１４ａ・・・・・・ポジ型ホト
レジストパターン、１７・・・・・・ネガ型ホトレジス
ト層、１７ａ，１７ｂ・・・・・・ネガ型ホトレジスト
パターン。Figures 1 a to d are process diagrams illustrating the conventional photoetching method. Figure 2 A
-D is a process diagram showing a photoetching method according to an embodiment of the present invention;
Figure 2 E and F are process diagrams showing an example of how the method is used, Figure 3 A
-D is a process diagram showing a photolithography method according to another embodiment of the present invention. 11...Base, 14a...Positive photoresist pattern, 17...Negative photoresist layer, 17a, 17b...Negative photoresist pattern.
Claims (1)
と、前記基体およびポジ型感光性樹脂パターン上にネガ
型感光性樹脂層を形成する工程と、前記ポジ型感光性樹
脂パターン上の前記ネガ型感光性樹脂層の少なくとも一
部を除去して前記ポジ型感光性樹脂パターンの一部を露
出する工程と、全面露光して前記ポジ型感光性樹脂パタ
ーンを除去する工程とを備えてなる写真蝕刻方法。 ２ ポジ型感光性樹脂パターンの一部を露出する工程は
、ネガ型感光性樹脂層をポジ型感光性樹脂パターンを形
成したホトマスクまたは前記ポジ型。 感光性樹脂パターンを形成したホトマスクと略一致した
パターンのホトマスクを用いて露光現像して行なうこと
を特徴とする特許請求の範囲第１項に記載の写真蝕刻方
法。３ ポジ型感光性樹脂パターンの一部を露出する工
程は、プラズマエッチングにより全面のエッチングを行
なうことを特徴とする特許請求の範囲第１項に記載の写
真蝕刻方法。[Scope of Claims] 1. A step of forming a positive photosensitive resin pattern on a substrate, a step of forming a negative photosensitive resin layer on the substrate and the positive photosensitive resin pattern, and a step of forming a negative photosensitive resin layer on the substrate and the positive photosensitive resin pattern. a step of removing at least a portion of the negative photosensitive resin layer on the resin pattern to expose a portion of the positive photosensitive resin pattern; and a step of exposing the entire surface to light and removing the positive photosensitive resin pattern. A photo engraving method comprising: 2. In the step of exposing a part of the positive photosensitive resin pattern, the negative photosensitive resin layer is exposed to a photomask on which a positive photosensitive resin pattern is formed, or the positive type is used. 2. The photoetching method according to claim 1, wherein the photolithography is carried out by exposure and development using a photomask having a pattern that substantially matches the photomask on which the photosensitive resin pattern is formed. 3. The photolithography method according to claim 1, wherein the step of exposing a portion of the positive photosensitive resin pattern includes etching the entire surface by plasma etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52055627A JPS5950053B2 (en) | 1977-05-13 | 1977-05-13 | Photo engraving method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52055627A JPS5950053B2 (en) | 1977-05-13 | 1977-05-13 | Photo engraving method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53141035A JPS53141035A (en) | 1978-12-08 |
| JPS5950053B2 true JPS5950053B2 (en) | 1984-12-06 |
Family
ID=13004011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52055627A Expired JPS5950053B2 (en) | 1977-05-13 | 1977-05-13 | Photo engraving method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5950053B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6180541A (en) * | 1984-09-26 | 1986-04-24 | Sanyo Electric Co Ltd | Detector of magnetic tape end |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW432896B (en) * | 1997-10-15 | 2001-05-01 | Siemens Ag | Preparation of organic electroluminescencizing elements |
| JP4765811B2 (en) * | 2006-07-27 | 2011-09-07 | ソニー株式会社 | Wiring formation method |
-
1977
- 1977-05-13 JP JP52055627A patent/JPS5950053B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6180541A (en) * | 1984-09-26 | 1986-04-24 | Sanyo Electric Co Ltd | Detector of magnetic tape end |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53141035A (en) | 1978-12-08 |
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