JPS62278196A - Method for diamond synthesis - Google Patents
Method for diamond synthesisInfo
- Publication number
- JPS62278196A JPS62278196A JP12192086A JP12192086A JPS62278196A JP S62278196 A JPS62278196 A JP S62278196A JP 12192086 A JP12192086 A JP 12192086A JP 12192086 A JP12192086 A JP 12192086A JP S62278196 A JPS62278196 A JP S62278196A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- base material
- filament
- light
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 7
- 229910003460 diamond Inorganic materials 0.000 title abstract description 24
- 230000015572 biosynthetic process Effects 0.000 title abstract description 11
- 238000003786 synthesis reaction Methods 0.000 title abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 34
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052755 nonmetal Inorganic materials 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 230000002194 synthesizing effect Effects 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 17
- 239000007789 gas Substances 0.000 abstract description 10
- 239000012495 reaction gas Substances 0.000 abstract description 10
- 239000001257 hydrogen Substances 0.000 abstract description 9
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229930195733 hydrocarbon Natural products 0.000 abstract description 3
- 150000002430 hydrocarbons Chemical class 0.000 abstract description 3
- 229910052759 nickel Inorganic materials 0.000 abstract description 3
- 229910052697 platinum Inorganic materials 0.000 abstract description 3
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 3
- 229910052725 zinc Inorganic materials 0.000 abstract description 3
- 239000004215 Carbon black (E152) Substances 0.000 abstract description 2
- 229910052792 caesium Inorganic materials 0.000 abstract description 2
- 239000011261 inert gas Substances 0.000 abstract description 2
- 229910052700 potassium Inorganic materials 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract description 2
- 229910052708 sodium Inorganic materials 0.000 abstract description 2
- 239000007769 metal material Substances 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 229910003465 moissanite Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 238000001947 vapour-phase growth Methods 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000006303 photolysis reaction Methods 0.000 description 4
- 230000015843 photosynthesis, light reaction Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 238000000197 pyrolysis Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
発明の詳細な説明
〔産業上の利用分野〕
本発明は、化学気相成長法によるダイヤモンド合成方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a method for synthesizing diamond by chemical vapor deposition.
本発明は、基材又は加熱体のいずれか一方又は両方に光
電子放出の性質がある金属や非金属を使用し、光を照射
しながら加熱することにより反応ガスを分解することに
より、ダイヤモンド合成を起き易くしたものである。The present invention uses a metal or non-metal that has photoelectron emission properties as either the base material or the heating element, or both, and decomposes the reaction gas by heating while irradiating light, thereby performing diamond synthesis. It made it easier to wake up.
従来、化学気相成長法によるダイヤモンド合成法及びそ
の装置について、色々のものが提案されている。原料と
して、炭化水素と水素の混合ガス或いはメチル基を含む
有機化合物（ガス化するか又は液のまま）と水素の混合
物或いはこれらにアルゴン等の不活性ガスを少量加えた
ものを使用し、分解エネルギとして熱、光、電子線又は
プラズマ等を用いるものが知られている。Conventionally, various diamond synthesis methods and apparatuses using chemical vapor deposition have been proposed. As a raw material, a mixed gas of hydrocarbon and hydrogen, a mixture of an organic compound containing a methyl group (gasified or as a liquid) and hydrogen, or a mixture of these with a small amount of inert gas such as argon added is used, and the mixture is decomposed. Those using heat, light, electron beams, plasma, etc. as energy are known.
第２図は、熱分解によるダイヤモンド合成装置の従来例
を示す系統図である。この図において、（１）は炭化水
素及び水素又は有機化合物及び水素などの反応ガス供給
装置、（２）は加熱炉、（３）は基材支持台、（４）は
反応管、（５）は基材、（６）はタングステン・フィラ
メント、（７）は排気装置、（８）は排気口、（９）。FIG. 2 is a system diagram showing a conventional example of a diamond synthesis apparatus using pyrolysis. In this figure, (1) is a reactant gas supply device for hydrocarbons and hydrogen or organic compounds and hydrogen, (2) is a heating furnace, (3) is a substrate support, (4) is a reaction tube, and (5) is a heating furnace. is a base material, (6) is a tungsten filament, (7) is an exhaust device, (8) is an exhaust port, and (9).
（１０） 、 （１１） 、 （１２）はコックを
示す。まず、反応管（４）内の基材支持台（３）に基材
（５）を設置した後、排気装置（７）で反応管（４）内
の空気を排気する。次に、コック（１０） 、 （１
１） 、 （１２）で混合ガスの濃度及び流量を調整
してこれを反応管（４）内に導入し、コック（９）で反
応管（４）内を所定の圧力に保持する。(10), (11), and (12) indicate cocks. First, the substrate (5) is placed on the substrate support (3) in the reaction tube (4), and then the air in the reaction tube (4) is exhausted by the exhaust device (7). Next, cook (10), (1
1) The concentration and flow rate of the mixed gas are adjusted in steps (12) and introduced into the reaction tube (4), and the inside of the reaction tube (4) is maintained at a predetermined pressure with the cock (9).
混合ガスは、反応管（４）の上部から導入され、基材支
持台（３）の近傍に配置されたタングステン・フィラメ
ント（６）を通過して基材（５）の表面に供給される。The mixed gas is introduced from the top of the reaction tube (4), passes through a tungsten filament (6) placed near the substrate support (3), and is supplied to the surface of the substrate (5).
加熱炉（２）及びタングステン・フィラメント（６）を
それぞれ所定の温度まで加熱すると、基材（５）の表面
に膜状ダイヤモンドが析出される。この場合、反応管（
４）内の圧力は真空に限らず常圧とすることもできるが
、基材の温度は約５００〜９００℃、タングステン・フ
ィラメントの温度は約２０００〜２３００℃とする必要
がある。また、フィラメトと基材の距離は通常５ｗ位で
ある。When the heating furnace (2) and the tungsten filament (6) are heated to predetermined temperatures, a diamond film is deposited on the surface of the base material (5). In this case, the reaction tube (
4) The pressure inside is not limited to vacuum and can be normal pressure, but the temperature of the base material needs to be about 500-900°C and the temperature of the tungsten filament needs to be about 2000-2300°C. Further, the distance between the filament and the base material is usually about 5W.
第３図は光分解によるダイヤモンド合成装置の従来例の
要部を示す略図である。この図において、第２図と対応
する部分には同じ符号を付してあり、（１４）は光源（
１５）は透光窓を示す。FIG. 3 is a schematic diagram showing the main parts of a conventional example of a diamond synthesis apparatus using photolysis. In this figure, parts corresponding to those in Figure 2 are given the same reference numerals, and (14) is the light source (
15) indicates a transparent window.
上述のような熱分解によるダイヤモンド合成装置では、
例えば加熱体をタングステン・フィラメントとした場合
加熱温度を２０００℃以上とする必要があり、また、フ
ィラメントと基材の距離を余り離すことができず、基材
を熱によって傷める欠点がある。一方、光分解のみによ
るダイヤモンド合成装置では大きな光エネルギを必要と
する等の欠点がある。In the diamond synthesis equipment using pyrolysis as mentioned above,
For example, when a tungsten filament is used as the heating element, the heating temperature needs to be 2000° C. or higher, and the distance between the filament and the base material cannot be set very far, which has the disadvantage that the base material may be damaged by heat. On the other hand, a diamond synthesis apparatus using only photolysis has drawbacks such as requiring a large amount of light energy.
したがって、本発明は、基材を加熱体より離すことがで
き、加熱体の温度が少しでも低く、また光エネルギがよ
り少なくて済むダイヤモンド合成方法を提供しようとす
るものである。Therefore, the present invention aims to provide a diamond synthesis method in which the base material can be separated from the heating element, the temperature of the heating element can be as low as possible, and the amount of light energy can be reduced.
本発明は、基材又は加熱体のいずれか一方又は両方に光
電子放出の性質がある金属や非金属を使用し、光を照射
しながら加熱することにより反応ガスを分解するように
した。In the present invention, a metal or a non-metal having a photoelectron emission property is used for either or both of the base material and the heating body, and the reaction gas is decomposed by heating while irradiating light.
基材又は加熱体のいずれか一方もしくは両方に光電子放
出の性質がある金属か非金属が使用されると、従来より
少ない光エネルギでも多量の光電子が放出され、ダイヤ
モンド合成が起き易くなるので、加熱体の温度を下げる
ことができ、加熱体と基材の距離を太き（できる。If a metal or non-metal with photoelectron emission properties is used for either or both of the base material and the heating element, a large amount of photoelectrons will be emitted even with less light energy than before, making it easier for diamond synthesis to occur. The temperature of the body can be lowered, and the distance between the heating element and the base material can be increased.
第１図は、本発明方法に使用する装置の例を示す略図で
ある。この図において、第２及び第３図の構成素子と対
応するものには同−又は類似の符号を付しである。（２
′）は基材（５）を加熱するため両方に使用した方が効
果は大きいが、どちらか一方でもそれだけの効果がある
。光電子放出金属又は非金属としては、セシウム、バリ
ウム９ルビジウム、カリウム、ナトリウム、リチウム、
亜鉛。FIG. 1 is a schematic diagram showing an example of an apparatus for use in the method of the invention. In this figure, components corresponding to those in FIGS. 2 and 3 are designated by the same or similar reference numerals. (2
') heats the base material (5), so it is more effective if used for both, but either one has the same effect. Photoelectron emitting metals or non-metals include cesium, barium 9 rubidium, potassium, sodium, lithium,
zinc.
ニッケル、白金、シリコンカーバイド、シリコン、酸化
アルミニウム、酸化チタンなどが挙げられる。Examples include nickel, platinum, silicon carbide, silicon, aluminum oxide, and titanium oxide.
光源（１４）としては、使用する光電子放出金属の種類
によって光の波長を選定するが、可視光線から紫外線ま
で或いはＸ線なども使用しうる。光源（１４）と透光窓
（１５）は、反応室（４）の天井に限らず、基材（５）
又はフィラメント（６）の形状によっては側面に設けて
もよく、更に反応室（４）全体を透光性としてもよい。As for the light source (14), the wavelength of the light is selected depending on the type of photoelectron emitting metal used, but it is also possible to use visible light to ultraviolet light or X-rays. The light source (14) and the transparent window (15) are not limited to the ceiling of the reaction chamber (4), but also the base material (5).
Alternatively, depending on the shape of the filament (6), it may be provided on the side surface, or the entire reaction chamber (4) may be made translucent.
また、図示しないが振動発生機を設けて基材又はフィラ
メントの一方又は両方を撮動させるようにすると、光電
子放出が更に促進される。更に、基材支持台（３）とフ
ィラメント（６）間に直流電源をＷｉ統して、電子線を
加えるようにすることができる。なお、反応ガスとして
は、前述の従来ガスを使用する。Moreover, if a vibration generator (not shown) is provided to image one or both of the base material and the filament, photoelectron emission is further promoted. Furthermore, a direct current power source can be integrated between the base material support (3) and the filament (6) to apply an electron beam. Note that the above-mentioned conventional gas is used as the reaction gas.
（実施例１）
反応ガスにアセトンと水素の混合ガスを使用し、フィラ
メントの材質を亜鉛としてフィラメント温度を１５０〜
２００℃に保ち、基材をシリコンとして基材温度を４０
０℃に保ち、フィラメントと基材の距離を３ｃｍとして
紫外線を照射しながら加熱したところ、９０分の後に厚
さが１〜３μｍの膜状ダイヤモンドが析出された。(Example 1) Using a mixed gas of acetone and hydrogen as the reaction gas, using zinc as the filament material, the filament temperature was set at 150~150℃.
Maintain the temperature at 200℃, and set the substrate temperature to 40℃ using silicon as the substrate.
When heated while maintaining the temperature at 0° C. and irradiating ultraviolet rays with a distance between the filament and the base material of 3 cm, a diamond film with a thickness of 1 to 3 μm was deposited after 90 minutes.
（実施例２）
反応ガスにアセトンと水素の混合ガスを使用し、フィラ
メントの材質を白金としてフィラメント温度を５００〜
８００℃に保ち、基材をシリコンとして基材温度を４０
０℃に保ち、フィラメントと基材の距離を５ｃｍとして
撮動を加え紫外線を照射しながら加熱したところ、９０
分の後に厚さが５〜８μｍの膜状ダイヤモンドが析出さ
れた。(Example 2) A mixed gas of acetone and hydrogen was used as the reaction gas, platinum was used as the material of the filament, and the filament temperature was set at 500 -
Maintain the temperature at 800℃, and set the substrate temperature to 40℃ using silicon as the substrate.
When the temperature was kept at 0℃, the distance between the filament and the base material was 5cm, and the film was photographed and heated while irradiating ultraviolet rays,
After a few minutes, a diamond film with a thickness of 5-8 μm was deposited.
なお、本例において振動を加えない場合は、フィラメン
トと基材の距離を３ｃｍとしたとき、９０分後に厚さが
７〜１８μｍの膜状ダイヤモンドが析出された。In this example, when no vibration was applied and the distance between the filament and the base material was 3 cm, a diamond film with a thickness of 7 to 18 μm was deposited after 90 minutes.
（実施例３）
反応ガスにアセトンと水素の混合ガスを使用し、フィラ
メントの材質をニッケルとしてフィラメント温度を５０
０〜８００℃に保ち、基材をシリコンとして基材温度を
４００℃に保ち、フィラメントと基材の距離を５ｃｍと
して振動を加え紫外線を照射しながら加熱したところ、
９０分の後に厚さ ５〜１０μ涌の膜状ダイヤモンドが
析出された。(Example 3) A mixed gas of acetone and hydrogen was used as the reaction gas, the material of the filament was nickel, and the filament temperature was set at 50°C.
The temperature of the filament was maintained at 0 to 800°C, the base material was silicon, the temperature of the base material was kept at 400°C, the distance between the filament and the base material was 5 cm, and the filament was heated while being vibrated and irradiated with ultraviolet rays.
After 90 minutes, a film of diamond 5-10 microns thick was deposited.
なお、本例において振動を加えない場合は、フィラメン
トと基材の距離を３ ｃｍとしたとき、９０分後に厚さ
７〜２０μｍの膜状ダイヤモンドが析出された。In this example, when no vibration was applied and the distance between the filament and the base material was 3 cm, a diamond film with a thickness of 7 to 20 μm was deposited after 90 minutes.
（実施例４）
反応ガスにアセトンと水素の混合ガスを使用し、フィラ
メントの材質をシリコンカーバイドとしてフィラメント
温度を５００〜８００℃に保ち、基材をシリコンとして
基材温度を５００℃に保ち、フィラメントと基材の距離
を５値として振動を加え紫外線を照射しながら加熱した
ところ、９０分の後にＩ￥さ５〜８μｍの膜状ダイヤモ
ンドが析出された。(Example 4) Using a mixed gas of acetone and hydrogen as the reaction gas, using silicon carbide as the filament material and keeping the filament temperature at 500 to 800°C, using silicon as the base material and keeping the base material temperature at 500°C, the filament When heating was performed while applying vibration and irradiating ultraviolet rays with five values of the distance between and the base material, a diamond film with a diameter of 5 to 8 μm was precipitated after 90 minutes.
なお、本例において振動を加えない場合は、フィラメン
トと基材の距離を３ａｍとしたとき、９０分後に厚さ１
２〜２０μｍの膜状ダイヤモンドが析出された。In addition, in this example, when vibration is not applied, when the distance between the filament and the base material is 3 am, the thickness becomes 1 after 90 minutes.
Film-like diamonds of 2-20 μm were deposited.
以上説明したとおり、本発明によれば、光分解及び熱分
解を用いるダイヤモンド合成において、光電子の放出を
助長することにより従来より遥かに低い加熱温度で且つ
従来より大きい加熱体・基材間距離で膜状ダイヤモンド
を得ることができる。As explained above, according to the present invention, in diamond synthesis using photolysis and thermal decomposition, by promoting the emission of photoelectrons, the heating temperature can be much lower than conventional ones, and the distance between the heating body and the substrate can be larger than conventional ones. Membrane diamond can be obtained.
第１図は本発明方法に使用する装置の要部の例を示す略
図、第２図は熱分解によるダイヤモンド合成装置の従来
例を示す系統図、第３図は光分解によるダイヤモンド合
成装置の従来例の要部を示す略図である。
（４）・・・反応容器、（５）・・・基材、（６）・・
・加熱体、（１４）・・・光源、（１５）・・・透光窓
。Fig. 1 is a schematic diagram showing an example of the main parts of the apparatus used in the method of the present invention, Fig. 2 is a system diagram showing a conventional example of a diamond synthesis apparatus using pyrolysis, and Fig. 3 is a conventional example of a diamond synthesis apparatus using photolysis. 2 is a schematic diagram showing the main parts of an example. (4)...Reaction container, (5)...Base material, (6)...
- Heating body, (14)...Light source, (15)...Translucent window.
Claims (1)
性質がある金属や非金属を使用し、これらの基材及び加
熱体を入れた反応容器内で光を照射しながら加熱するこ
とにより反応ガスを分解し、上記基材表面にダイヤモン
ドを析出させることを特徴とする化学気相成長法による
ダイヤモンド合成方法。A reaction is carried out by using a metal or non-metal that has photoelectron emitting properties as either or both of the base material and the heating body, and heating the base material and the heating body while irradiating the reaction vessel with light. A method for synthesizing diamonds by chemical vapor deposition, characterized by decomposing gas and depositing diamonds on the surface of the base material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12192086A JPS62278196A (en) | 1986-05-27 | 1986-05-27 | Method for diamond synthesis |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12192086A JPS62278196A (en) | 1986-05-27 | 1986-05-27 | Method for diamond synthesis |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62278196A true JPS62278196A (en) | 1987-12-03 |
Family
ID=14823184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12192086A Pending JPS62278196A (en) | 1986-05-27 | 1986-05-27 | Method for diamond synthesis |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62278196A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4427714A1 (en) * | 1994-08-05 | 1996-02-15 | Daimler Benz Ag | Composite structure used for electronic components |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60127300A (en) * | 1983-12-15 | 1985-07-06 | Nec Corp | Gas-phase synthesis of diamond |
| JPS60171295A (en) * | 1984-02-14 | 1985-09-04 | Mitsubishi Metal Corp | Method for forming artificial diamond by vapor deposition |
| JPS61146791A (en) * | 1984-12-18 | 1986-07-04 | Toshiba Corp | Formation of diamond film or diamond-like carbon film |
| JPS61201694A (en) * | 1985-02-28 | 1986-09-06 | Nec Corp | Vapor phase synthesis method for diamond |
-
1986
- 1986-05-27 JP JP12192086A patent/JPS62278196A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60127300A (en) * | 1983-12-15 | 1985-07-06 | Nec Corp | Gas-phase synthesis of diamond |
| JPS60171295A (en) * | 1984-02-14 | 1985-09-04 | Mitsubishi Metal Corp | Method for forming artificial diamond by vapor deposition |
| JPS61146791A (en) * | 1984-12-18 | 1986-07-04 | Toshiba Corp | Formation of diamond film or diamond-like carbon film |
| JPS61201694A (en) * | 1985-02-28 | 1986-09-06 | Nec Corp | Vapor phase synthesis method for diamond |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4427714A1 (en) * | 1994-08-05 | 1996-02-15 | Daimler Benz Ag | Composite structure used for electronic components |
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