JPS6226637A - Manufacture of vertical magnetic recording medium having thin soft magnetic 'permalloy(r)' film - Google Patents
Manufacture of vertical magnetic recording medium having thin soft magnetic 'permalloy(r)' filmInfo
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- JPS6226637A JPS6226637A JP16394485A JP16394485A JPS6226637A JP S6226637 A JPS6226637 A JP S6226637A JP 16394485 A JP16394485 A JP 16394485A JP 16394485 A JP16394485 A JP 16394485A JP S6226637 A JPS6226637 A JP S6226637A
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- Prior art keywords
- permalloy
- layer
- film
- recording medium
- soft magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、２Ｍ膜垂直磁気記録嘉体の作製方法に係わり
、特に本発明は軟磁性パーマロイ層の作製方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing a 2M perpendicular magnetic recording device, and particularly the present invention relates to a method for manufacturing a soft magnetic permalloy layer.
（従来の技術）
近年垂直磁気記録方式が高密度磁気記録に適した記録方
式として注目されている。この記録方式に好都合な記録
媒体としてパーマロイなどの軟磁性層とＣｔｏ −Ｃｒ
などの垂直磁化膜層からなる２層膜媒体が知られている
。そして軟磁性層としては保磁力が小さく、透磁率の高
い程記録感度は良（なり、又、再生出力も大きくなる。(Prior Art) In recent years, perpendicular magnetic recording has attracted attention as a recording method suitable for high-density magnetic recording. A recording medium suitable for this recording method is a soft magnetic layer such as permalloy and Cto-Cr.
Two-layer media consisting of perpendicularly magnetized film layers are known. As a soft magnetic layer, the smaller the coercive force and the higher the magnetic permeability, the better the recording sensitivity (and the higher the reproduction output).
ただし、あまりにも軟磁性が良好になり過ぎるとスパイ
ク状のノイズを発生して好ましくなく、ノイズ発生を抑
えるための大よその目安として保磁力は２〜３工ルステ
ツド以上であることが知られている。However, if the soft magnetism becomes too good, it will generate spike-like noise, which is undesirable, and it is known that a rough guideline for suppressing noise generation is that the coercive force should be 2 to 3 degrees or more. There is.
ファス磁性膜が知られているが、経済性などの点から多
く用いられているのはパーマロイである。Fas magnetic films are known, but permalloy is more commonly used due to its economic efficiency.
（発明が解決しようとする問題点）
しかし１パーマロイ薄膜の場合には基板面に垂直な磁気
異方性が発生し易く、保磁力はｌＯエルステッド以上に
もなるので２層膜垂直媒体としての性能を悪くしていた
。(Problem to be solved by the invention) However, in the case of a single permalloy thin film, magnetic anisotropy perpendicular to the substrate surface is likely to occur, and the coercive force is greater than 1O Oe, so the performance as a two-layer perpendicular medium is poor. was making things worse.
本発明は前記従来の垂直磁気記録媒体のパーマロイ軟磁
性層が有する垂直磁気異方性を抑制して、保磁力の小さ
い浸れた軟磁気特性を有する垂直磁気記録媒体用の軟磁
性層の作製方法を提供することな目的とするものであり
、特許請求の範囲に記載の方法を提供することによって
、前記目的を達成することができる。The present invention provides a method for manufacturing a soft magnetic layer for a perpendicular magnetic recording medium that suppresses the perpendicular magnetic anisotropy of the permalloy soft magnetic layer of the conventional perpendicular magnetic recording medium and has submerged soft magnetic characteristics with a small coercive force. It is an object of the present invention to provide a method, and the above object can be achieved by providing the method described in the claims.
（問題点を解決するための手段）
本発明は、非磁性基板上にパーマロイ層およびＣｏ −
Ｃｒ垂直磁化膜層をスパッタ法により順次形成するパー
マロイ薄膜軟磁性層を有する垂直磁気記録媒体の作製方
法において：
下記（ａ） 、 （ｂ）および（Ｑ）工程のシーケンス
からなること’に％徴とするパーマロイ薄膜軟磁性層を
有する垂直磁気記録媒体の作ｉ方法：
（２））非磁性基板を真空槽内で熱処理する工程；（ｂ
） 真空槽内に空気を導入して前記熱処理後の基板を
大気にさらす工程；および
（ｃ） 真空槽内を真空排気した後アルゴンガスを導
入して、スパッタ法によりパーマロイ層ヲ形成する工程
。(Means for Solving the Problems) The present invention provides a permalloy layer and a Co-
In a method for manufacturing a perpendicular magnetic recording medium having a permalloy thin film soft magnetic layer in which a Cr perpendicularly magnetized film layer is sequentially formed by sputtering, the following steps (a), (b) and (Q) are included. Method for producing a perpendicular magnetic recording medium having a permalloy thin film soft magnetic layer: (2)) Heat treating a nonmagnetic substrate in a vacuum chamber; (b)
) A step of introducing air into the vacuum chamber and exposing the substrate after the heat treatment to the atmosphere; and (c) A step of evacuating the inside of the vacuum chamber and then introducing argon gas to form a permalloy layer by sputtering.
に関するものである。It is related to.
本発明者らは、パーマロイ薄膜層の垂直磁気異方性はス
パッタ室のバックグランドの真空状態を良好にすると出
現し易いことから、高分子フィルム基板を真空槽中で熱
処理後、真空槽内を大気に開放し、しかる後に再び真空
槽全真空排気してアルゴンガスを導入し、スパッタを開
始することによって垂直磁気異方性の出現を抑制し得る
ことを新規に知見し、本発明を完成した。The present inventors discovered that the perpendicular magnetic anisotropy of the permalloy thin film layer is likely to appear when the background vacuum condition of the sputtering chamber is improved. The present invention was completed based on the new finding that the appearance of perpendicular magnetic anisotropy can be suppressed by opening to the atmosphere, then completely evacuating the vacuum chamber again, introducing argon gas, and starting sputtering. .
次に本発明を実験データについて詳しく説明する。Next, the present invention will be explained in detail using experimental data.
従来の軟磁性パーマロイ層の作製方法を下記比較例１〜
３について説明する。The conventional method for producing a soft magnetic permalloy layer is shown in Comparative Examples 1 to 1 below.
3 will be explained.
〔比較例１〕
パッチ式スパッタ装置中にポリイミド基板をセットし、
ｉｏ−”ｒｏｒｒ程度で２００Ｃで３０分間熱処理し
Ｎ ３Ｘ１０ Ｔｏｒｒ″！で真空排気後）アルゴン
ガスを導入し、以下の条件でモリブデンパーマロイ膜を
形成した。[Comparative Example 1] A polyimide substrate was set in a patch sputtering device,
io-” Heat treatment at 200C for 30 minutes at N 3X10 Torr”! After vacuum evacuation), argon gas was introduced, and a molybdenum permalloy film was formed under the following conditions.
スパッタ法 ： ＲＦマグネトロン
ターゲット ： ８インチｆの７８ Ｎｉ −Ｆｅ
ターゲット上にＭＯペレット配置
（面積比で４％）
アルゴン圧 ： ０．６〜ｌＸｌ０ Ｔｏｒｒ基板
温度 ：２０〜９０Ｃ
スパッタ電力 ： ０．７ Ｗ／ｃＩＬ２スパッタ
レイト ： ０．０１７μ電／ｍｉｎ膜厚約０．５
０μｍの膜の特性を第１表に示した。Sputtering method: RF magnetron target: 78 Ni-Fe with 8 inch f
MO pellet arrangement on the target (4% in area ratio) Argon pressure: 0.6 to 1X10 Torr Substrate temperature: 20 to 90C Sputtering power: 0.7 W/c IL2 sputtering rate: 0.017μ/min Film thickness approximately 0 .5
The properties of the 0 μm film are shown in Table 1.
ＨＯは膜面内の保磁力、Δθ５ｏはＸ＠回折ロッキング
曲線による（ Ｉ［Ｉ ）結晶軸の膜面法線方向からの
配向角の半値幅である。なお、保磁力Ｈｃは振動試料型
磁力計（ＶＳＭ）にて測定した。HO is the coercive force in the film plane, and Δθ5o is the half-width of the orientation angle of the (I[I) crystal axis from the normal direction of the film surface according to the X@ diffraction rocking curve. The coercive force Hc was measured using a vibrating sample magnetometer (VSM).
第１表
同表に示した全ての場合にＭ−Ｈルーズの形状は第１回
内に示しｔような形を示しており、垂直磁気異方性が存
在することを示す。そのために第１表に示されているよ
うに保磁力Ｈｃは多くの場゛合ｌＯエルステッド以上の
大きい値を示している。In all cases shown in Table 1, the shape of the M-H loose shape is as shown in the first table, indicating the presence of perpendicular magnetic anisotropy. For this reason, as shown in Table 1, the coercive force Hc exhibits a large value of 10 Oe or more in many cases.
〔比較例２〕
第２図に示す巻取式スパッター装置を用いてパーマロイ
膜を形成した。[Comparative Example 2] A permalloy film was formed using a winding type sputtering apparatus shown in FIG.
第２図は装置の概要な示す説明図であり、１は真空槽、
２は排気系への連結口、３ａ、３ｂはそれぞれカソード
であり、３ａにパーマロイ、３ｂにＣ０−Ｃｒターゲッ
トが取り付けられている。なおアノードは省略した。４
ａおよび４ｂは基板フィルムのワイングーオヨヒアンワ
インダー、５ａ、ｓｂ、ｓａ、６ｂはガイドローラー、
７ａ 、 ７ｂは段差ローラー、８ａ。Figure 2 is an explanatory diagram showing the outline of the device, 1 is a vacuum chamber,
2 is a connection port to the exhaust system, 3a and 3b are cathodes, and 3a is attached with permalloy and 3b is attached with a C0-Cr target. Note that the anode was omitted. 4
a and 4b are wine goo oyohian winders for the substrate film; 5a, sb, sa, and 6b are guide rollers;
7a and 7b are step rollers, and 8a.
８ｂは冷却ローラー、９はキャン、１０はマスク、１１
はスパッタガス吹出口、１２は基板フィルム、１３は基
板加熱ヒーターである。真空槽１を１Ｏ−６’ｒｏｒｒ
台まで排気後、キャン９又は基板加熱ヒーター１３によ
りポリイミドフィルム１２ ？ １００〜１９０Ｃで加
熱し、アンワインダ−４ｂからワインダー４ａにフィル
ムを巻き移した。加熱に用いたキャン９又は基板加熱ヒ
ーター１３を冷却し）真空槽内ｋ ０．７５〜１ ｘ
１Ｏ−６Ｔｏｒｒ Ｉｃ排気後、スパッタガス吹出口１
１からアルゴンガスを導入し、所定のガス圧に保ってカ
ソード３ａに取り付けられ念モリブデンパーマロイター
ゲットを用いて、移動するポリイミド基板上に連続的に
薄膜を形成した。スパッタ条件は次のとおりであるニス
バッタ７： ＤＯマグネトロン法
ターゲット組成＝ ５重量％モリブデンパーマロイア
ルゴンガス圧７ ０．５〜３ ｘ １Ｏ−３Ｔｏｒｒ
スパツタ電カニ 約８．５ Ｗ／ｃｓＬ２スパッタレイ
ト： 約０．４ｐｍ／ｍｉｎ膜厚が０．４５〜０．５μ
ｍの膜において得られた結果を第３図に示す。曲線ａは
基板フィルムの長さ方向に測定した保磁力Ｈｃ 、曲線
すは（■）結晶軸の配向角Δθ５ｏをそれぞれアルゴン
圧力に対して示す。基板の熱処理温度による変化は小さ
かった。8b is a cooling roller, 9 is a can, 10 is a mask, 11
1 is a sputtering gas outlet, 12 is a substrate film, and 13 is a heater for heating the substrate. Vacuum chamber 1 to 1O-6'rorr
After exhausting the air to the stand, the polyimide film 12 is heated by the can 9 or the substrate heater 13. The film was heated at 100 to 190C and transferred from the unwinder 4b to the winder 4a. (to cool the can 9 or substrate heating heater 13 used for heating) in the vacuum chamber k 0.75 to 1 x
1O-6Torr After exhausting Ic, sputter gas outlet 1
Argon gas was introduced from No. 1, and a thin film was continuously formed on the moving polyimide substrate using a molybdenum permalloy target attached to the cathode 3a while maintaining a predetermined gas pressure. The sputtering conditions are as follows Varnish Batter 7: DO magnetron method target composition = 5% by weight molybdenum permalloy argon gas pressure 7 0.5~3 x 1O-3 Torr
Sputter electric crab Approximately 8.5 W/csL2 sputter rate: Approximately 0.4pm/min Film thickness 0.45-0.5μ
The results obtained for the m film are shown in FIG. The curve a shows the coercive force Hc measured in the longitudinal direction of the substrate film, and the curve (■) shows the orientation angle Δθ5o of the crystal axis with respect to the argon pressure. Changes due to substrate heat treatment temperature were small.
Ｍ−Ｈループは全ての場合第１図の（Ａ）に示したよう
なループ形状を示しており、垂直磁気異方性が存在して
いた。又保磁力Ｈｃも１００ｅ以上と大きい値を示し九
〇
〔比較例３〕
゛ 比較例２の場合と同じ装置および同じスパッタ条件
でポリエステルフィルムを用いてモリブデンパーマロイ
膜を形成した。スパッタ時基板温度を８００１アルゴン
圧をｏ、５ｘｘｏ−”ｒｏｒｒ トシタ時の基板の熱処
理温度に対するフィルム長さ方向の保磁力Ｈａ （曲線
Ｃ）と結晶軸の配向角Δθ５０ （曲線ｄ［−示す。こ
れらの場合にも垂直磁気異方性の出現による大きな保磁
力を示している。The M-H loop had a loop shape as shown in FIG. 1(A) in all cases, and perpendicular magnetic anisotropy was present. The coercive force Hc also showed a large value of 100e or more.Comparative Example 3 A molybdenum permalloy film was formed using the same equipment and the same sputtering conditions as in Comparative Example 2 using a polyester film. The substrate temperature during sputtering is 8001, the argon pressure is o, 5xxo-"rorr, the coercive force Ha (curve C) in the film length direction and the crystal axis orientation angle Δθ50 (curve d [-. The case also shows a large coercive force due to the appearance of perpendicular magnetic anisotropy.
第５図はスパッタ時基板温度を６０ Ｃ以下とした′時
のスパッタガス圧に対する保磁力ＨＯ（曲線ｅ）と結晶
配向角Δθ５０（曲ｉｆ）の変化を示す図である。いず
れの場合にも垂直磁気異方性が出現しており、アルゴン
圧が２ Ｘ １０−’ Ｔｏｒｒ以下では大きな保磁力
を示している。アルゴン圧が２ Ｘ １Ｏ−６Ｔｏｒｒ
より大きい領域では保磁力Ｈｃはかなり小さくなってい
るが、この場合にも小さな垂直磁気異方性が確認された
。FIG. 5 is a diagram showing changes in coercive force HO (curve e) and crystal orientation angle Δθ50 (curve if) with respect to sputtering gas pressure when the substrate temperature during sputtering is set to 60 C or less. In either case, perpendicular magnetic anisotropy appears, and a large coercive force is exhibited when the argon pressure is 2 x 10-' Torr or less. Argon pressure is 2 x 1O-6Torr
Although the coercive force Hc is considerably smaller in the larger region, small perpendicular magnetic anisotropy was also confirmed in this case.
次に本発明を実施例について説明する。Next, the present invention will be explained with reference to examples.
〔実施例１〕
比較例２の場合と同じスパッタ装Ｎを用い、次の工程で
モリブデンパーマロイ膜を形成した。すなわちポリエス
テル基板を真空槽中にセットした後ＩＱ Ｔｏｒｒ台
に排気し、１ｏＯｔｌｌ’でポリエステル基板を熱処理
し之。しかる後に真空槽内を大気に開放し、再度Ｉ Ｘ
１０−’ Ｔｏｒｒまで排気してアルゴンガスを導入
しスパッターを行った。[Example 1] Using the same sputtering equipment N as in Comparative Example 2, a molybdenum permalloy film was formed in the next step. That is, after setting a polyester substrate in a vacuum chamber, the vacuum chamber was evacuated to an IQ Torr stand, and the polyester substrate was heat-treated at 1000 ml'. After that, the inside of the vacuum chamber was opened to the atmosphere, and the IX
The atmosphere was evacuated to 10-' Torr, argon gas was introduced, and sputtering was performed.
第２表はスパッタ一時基板温度を６０ Ｃ以下とした時
に膜厚約０．４５μｍの薄膜で得られた結果を示す。全
ての場合にＭ−Ｈルーズの形状は第１図色）に示した如
きループを示し、垂直磁気異方性が存在しないことを示
している。そのため第２表で明らかな如くフィルム長さ
方向の保磁力Ｈｃは小さい値を示している。Table 2 shows the results obtained for a thin film with a thickness of about 0.45 μm when the sputtering temporary substrate temperature was set to 60 C or less. In all cases, the M-H loose shape shows a loop as shown in Figure 1 (color), indicating the absence of perpendicular magnetic anisotropy. Therefore, as is clear from Table 2, the coercive force Hc in the film length direction shows a small value.
第６図はアルゴン圧を０．５ Ｘ １０”’−” Ｔｏ
ｒｒ、スパッタ条件ｆ ９，５ Ｗ／ｃＩＬ２とした時
の保磁力ＨＣ（曲線ｇ）と結晶配向角Δθ５０ （曲線
ｈ）のスパッタ一時基板温度に対する変化を示す。基板
温度が７０Ｃ’以下では垂直磁気異方性は出現せず、保
磁力も１０エルステツド以下となっているが、７０Ｃよ
り高くすると垂直磁気異方性が出現して保磁力が大きく
なることを示している、
〔実施例２〕
比較例２と同じスパッター装置を用い、ポリイミド基板
を用いて実施例１とほぼ同じ工程でモリブデンパーマロ
イ膜ヲスバツターした。ただし、基板の熱処理温度は１
９０Ｃとした。スパッタ一時基板温度を６０Ｃ以下、ス
パッター電力を８．５Ｗ／ｃＩＬ２とした時の結果を第
３表に示す。この場合１極めて小さい垂直磁気異方性の
存在が認められたが・保磁力Ｈａは比較例１〜３の場合
に比べて小さい値となっている。Figure 6 shows the argon pressure at 0.5 x 10''-'' To
rr, and the change in coercive force HC (curve g) and crystal orientation angle Δθ50 (curve h) with respect to the sputtering temporary substrate temperature when sputtering conditions f 9,5 W/cIL2 are shown. When the substrate temperature is below 70C', perpendicular magnetic anisotropy does not appear and the coercive force is less than 10 oersteds, but when the substrate temperature is higher than 70C, perpendicular magnetic anisotropy appears and the coercive force increases. [Example 2] Using the same sputtering apparatus as in Comparative Example 2, a molybdenum permalloy film was sputtered using substantially the same process as in Example 1 using a polyimide substrate. However, the heat treatment temperature of the substrate is 1
It was set to 90C. Table 3 shows the results when the sputtering temporary substrate temperature was 60C or less and the sputtering power was 8.5W/cIL2. In this case, 1. Although the presence of extremely small perpendicular magnetic anisotropy was observed, the coercive force Ha was a smaller value than in Comparative Examples 1 to 3.
第 ３ 表
以上に詳述した実施例から、２層膜垂直磁気記録媒体用
のパーマロイ軟磁性層の垂直磁気異方性の出現を抑制し
て、保磁力Ｈｃ ｆ小さくするためには、本発明による
作製工程すなわち真空槽中で基板フィルムを熱処理し定
接、真空槽内を大気開放する工程を入れて、しかる後に
再び真空排気してスパッターを行うことが非常に有効で
あることが明らかである。From the examples detailed above in Table 3, it is clear that in order to suppress the appearance of perpendicular magnetic anisotropy in a permalloy soft magnetic layer for a two-layer film perpendicular magnetic recording medium and to reduce the coercive force Hc f, the present invention It is clear that it is very effective to include a step of heat-treating the substrate film in a vacuum chamber, opening the chamber to the atmosphere, and then evacuating the chamber again and performing sputtering. .
（発明の効果）
以上本発明によれば、垂直磁気異方性が極めて小さいか
、あるいは実質的に存在しない軟磁性パーマロイ薄膜層
が得られ、２Ｂｉ膜垂面垂直磁気記録媒の軟磁性層とし
て優れたパーマロイ薄膜を作製することができる。(Effects of the Invention) As described above, according to the present invention, a soft magnetic permalloy thin film layer with extremely small or substantially non-existent perpendicular magnetic anisotropy can be obtained, and can be used as a soft magnetic layer of a 2Bi film perpendicular magnetic recording medium. Excellent permalloy thin films can be produced.
第１図はパーマロイ薄膜のＭ−）］ループを示す図であ
り、同図（１）は垂直磁気異方性が存在する場合、同図
［Ｆ］）は垂直磁気異方性が存在しない場合のｌ：１
゛、Ｓ、ループ形状をそれぞれ示す図、第２図はスパッ
タ・１１
・′−架装置概要を示す説明図、第３図はアルゴン圧に
対する保磁力と結晶配向角を示す図、第４図は基板の熱
処理温度に対する保磁力と結晶配向角の変化を示す図、
第５図はアルゴン圧に対する保磁力と結晶配向角の依存
性を示す図、第６図はスパッタ一時基板温度に対する保
磁力と結晶配向角の依存性を示す図である。
・ｌ・・・真空槽、３ａ、３ｂ・・・カソード、５ａ１
５ｂ１６ａ１６ｂ１７ａ、７ｂ１８ａ１８ｂ ・ｃｌ−
ラー１９・・・キャン、１２・・・基板フィルム−１３
・・基板加熱ヒーター。Figure 1 shows the M-)] loop of a permalloy thin film. Figure (1) shows the case where perpendicular magnetic anisotropy exists, and Figure [F]) shows the case where perpendicular magnetic anisotropy does not exist. Figure 2 is an explanatory diagram showing the outline of the sputtering device, Figure 3 is a diagram showing the coercive force and crystal orientation angle with respect to argon pressure, Figure 4 is a diagram showing changes in coercive force and crystal orientation angle with respect to heat treatment temperature of the substrate.
FIG. 5 is a diagram showing the dependence of coercive force and crystal orientation angle on argon pressure, and FIG. 6 is a diagram showing the dependence of coercive force and crystal orientation angle on sputtering temporary substrate temperature.・l...Vacuum chamber, 3a, 3b...Cathode, 5a1
5b16a16b17a, 7b18a18b ・cl-
19...Can, 12...Substrate film-13
...Substrate heating heater.
Claims (1)
磁化膜層をスパッタ法により順次形成するパーマロイ薄
膜軟磁性層を有する垂直磁気記録媒体の作製方法におい
て： 下記（ａ）、（ｂ）および（ｃ）工程のシーケンスから
なることを特徴とするパーマロイ薄膜軟磁性層を有する
垂直磁気記録媒体の作製方法。 （ａ）非磁性基板を真空槽中で熱処理する工程： （ｂ）真空槽内に空気を導入して前記熱処理後の基板を
大気にさらす工程；および （ｃ）真空槽内を真空排気した後、アルゴンガスを導入
してスパッタ法によりパーマロイ層を形成する工程。 ２、非磁性基板がポリイミド、ポリエチレンテレフタレ
ートなどの高分子フィルムであることを特徴とする特許
請求の範囲第１項に記載の垂直磁気記録媒体の作製方法
。[Claims] 1. In a method for manufacturing a perpendicular magnetic recording medium having a permalloy thin film soft magnetic layer, in which a permalloy layer and a Co-Cr perpendicular magnetic film layer are sequentially formed on a nonmagnetic substrate by sputtering, the following (a) , (b) and (c) A method for manufacturing a perpendicular magnetic recording medium having a permalloy thin film soft magnetic layer. (a) A step of heat-treating the non-magnetic substrate in a vacuum chamber; (b) A step of introducing air into the vacuum chamber and exposing the substrate after the heat treatment to the atmosphere; and (c) After evacuating the inside of the vacuum chamber. , a step of introducing argon gas and forming a permalloy layer by sputtering. 2. The method for manufacturing a perpendicular magnetic recording medium according to claim 1, wherein the nonmagnetic substrate is a polymer film such as polyimide or polyethylene terephthalate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60163944A JPH0664735B2 (en) | 1985-07-26 | 1985-07-26 | Method for manufacturing perpendicular magnetic recording medium having permalloy thin film soft magnetic layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60163944A JPH0664735B2 (en) | 1985-07-26 | 1985-07-26 | Method for manufacturing perpendicular magnetic recording medium having permalloy thin film soft magnetic layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6226637A true JPS6226637A (en) | 1987-02-04 |
| JPH0664735B2 JPH0664735B2 (en) | 1994-08-22 |
Family
ID=15783788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60163944A Expired - Lifetime JPH0664735B2 (en) | 1985-07-26 | 1985-07-26 | Method for manufacturing perpendicular magnetic recording medium having permalloy thin film soft magnetic layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0664735B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01155520A (en) * | 1987-12-14 | 1989-06-19 | Akai Electric Co Ltd | Production of perpendicular magnetic recording medium |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6222242A (en) * | 1985-07-23 | 1987-01-30 | Toshiba Corp | Production of vertical magnetic recording medium |
-
1985
- 1985-07-26 JP JP60163944A patent/JPH0664735B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6222242A (en) * | 1985-07-23 | 1987-01-30 | Toshiba Corp | Production of vertical magnetic recording medium |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01155520A (en) * | 1987-12-14 | 1989-06-19 | Akai Electric Co Ltd | Production of perpendicular magnetic recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0664735B2 (en) | 1994-08-22 |
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