JPS6134723A - Magnetic recording medium and its manufacture - Google Patents
Magnetic recording medium and its manufactureInfo
- Publication number
- JPS6134723A JPS6134723A JP15399684A JP15399684A JPS6134723A JP S6134723 A JPS6134723 A JP S6134723A JP 15399684 A JP15399684 A JP 15399684A JP 15399684 A JP15399684 A JP 15399684A JP S6134723 A JPS6134723 A JP S6134723A
- Authority
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- Japan
- Prior art keywords
- coercive force
- layer
- magnetic
- magnetic recording
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
［利用分野］
本発明は高密度記録できる重向磁気記録方式に適した磁
気記録媒体に関し、更に詳しくは非磁性の基板上に、磁
性薄膜からなる低保磁力層及び膜面に垂直な方向に磁化
容易軸を有する垂直磁化層からなる磁気記録層を順次形
成した磁気記録媒体の改良及び改良された磁気記録媒体
の製造法に関する。Detailed Description of the Invention [Field of Application] The present invention relates to a magnetic recording medium suitable for a cross-directed magnetic recording method capable of high-density recording, and more specifically, a low coercive force layer made of a magnetic thin film and a magnetic thin film on a non-magnetic substrate. The present invention relates to an improvement of a magnetic recording medium in which a magnetic recording layer consisting of a perpendicular magnetic layer having an axis of easy magnetization in a direction perpendicular to the film surface is sequentially formed, and a method of manufacturing the improved magnetic recording medium.
［従来技術１
上述の低保磁力層と垂直磁化層とからなる二層膜の磁気
記録媒体は、垂直磁気記録方式において単極型ヘッドに
よって効率良く記録できる垂直磁気記録媒体として特公
昭５８−９１号公報、特公昭５８− １０７６９号公報
等により公知である。この公知の二層膜構成の磁気記録
媒体（以下゛二層膜媒体″という）は、具体的にはＲＦ
２極スパッタ法で作成され、低保磁力層をＮｉ ＜ニ
ッケル）、Ｆｅ（鉄）を主成分とするパーマロイで、垂
直磁化層をＧｏ （コバルト）−Ｃｒ（クロム）合金
膜で構成したものであり、高い記録感度と大なる再生出
力を得られる優れたものであるが、高周波領域での出力
が低下し、より一層の改善が望まれている。[Prior Art 1 The above-mentioned two-layer magnetic recording medium consisting of a low coercive force layer and a perpendicular magnetization layer was developed as a perpendicular magnetic recording medium that can be efficiently recorded by a single-pole head in the perpendicular magnetic recording system, and was developed in Japanese Patent Publication No. 58-91. This method is known from Japanese Patent Publication No. 58-10769 and the like. This known magnetic recording medium with a two-layer film structure (hereinafter referred to as a "double-layer film medium") specifically uses RF
It was created using the bipolar sputtering method, and the low coercive force layer is made of permalloy whose main components are Ni < nickel and Fe (iron), and the perpendicular magnetization layer is made of a Go (cobalt)-Cr (chromium) alloy film. Although this is an excellent device that can obtain high recording sensitivity and large reproduction output, the output in the high frequency region decreases, and further improvement is desired.
［発明の目的］
本発明は１述の二層膜媒体の特性を改善することを目的
とするもので、低保磁力層を構成するパーマロイ薄膜に
看目し、その特性を改善することによって、さらに改善
された高い記録感度と大なる再生出力を有する磁気記録
媒体を実現すると共にその安定生産を可能とする製造法
を提供することを目的とするものぐある。[Object of the Invention] The present invention aims to improve the characteristics of the two-layer film medium mentioned above, and by improving the characteristics of the permalloy thin film constituting the low coercive force layer, Another object of the present invention is to realize a magnetic recording medium having improved high recording sensitivity and high reproduction output, and to provide a manufacturing method that enables stable production thereof.
［発明の構成１作用効果１
本発明は、前述の二層膜媒体、すなわち非磁性の基板上
にＦｅ及びＮｉを主成分とするパーマロイ薄膜からなる
低保磁力層ど膜面に垂直方向に磁化容易軸を有する磁気
記録層とを有する磁気記録媒体において、前記低保磁力
層のパーマロイ薄膜のＭｎ （マンガン〉含有ｍがｔｏ
ｏ ｐｐｍ （重量％）以上であることを特徴どし、
低保磁力層が非常に良好な軟磁気特性、１を有する磁気
記録媒体を第１発明とするものである。そして、第１発
明の磁気記録媒体の低保磁力層を安定して形成できるス
パッタリング法により形成する製造法を第２の発明とす
るものである。[Structure 1 of the Invention 1 Effect 1 The present invention provides the above-mentioned two-layer film medium, that is, a low coercive force layer consisting of a permalloy thin film mainly composed of Fe and Ni on a non-magnetic substrate, which is magnetized in a direction perpendicular to the film plane. In a magnetic recording medium having a magnetic recording layer having an easy axis, the Mn (manganese) content m of the permalloy thin film of the low coercive force layer is to
o ppm (weight%) or more,
The first invention provides a magnetic recording medium in which the low coercive force layer has very good soft magnetic properties. A second invention provides a manufacturing method for forming the low coercive force layer of the magnetic recording medium of the first invention by a sputtering method that can stably form the low coercive force layer.
上述の本発明は以下のようにしてなされたものである。The above-mentioned present invention was made as follows.
第１図は二層膜媒体の低保磁力層の保磁力と再生出力の
関係を示す測定例を示したもので、同図から二層膜媒体
の低保磁力層の保磁力は小さい程記録感度、再生出力等
の面で有利であることがわかる。なお、図の縦軸は、再
生出力で図の黒丸のサンプルの出力を基準として規格し
た相対値でもつで示しＣある。横軸は低保磁力層の保磁
力で単位はエルステッド（Ｏｅ ）である。Figure 1 shows a measurement example showing the relationship between the coercive force of the low coercive force layer of a two-layer film medium and the reproduction output.From the figure, it can be seen that the smaller the coercive force of the low coercive force layer of a two-layer film medium, the more recording is possible. It can be seen that this is advantageous in terms of sensitivity, reproduction output, etc. Note that the vertical axis of the figure is the playback output, which is a relative value standardized based on the output of the sample indicated by the black circle in the figure. The horizontal axis represents the coercive force of the low coercive force layer, and the unit is Oersted (Oe).
ところで、低保磁力層は通常、パーマロイターゲットを
用い、スパッタリング法で形成される。By the way, the low coercive force layer is usually formed by sputtering using a permalloy target.
スパッタリングされた低保磁力層の面内の保磁力は必ず
しも一定でなくスパッタリング条件によって箕る。なか
でもターゲット組成、スパッタリング圧力、スパッタリ
ング温度などが面内保磁力に大きく彩管し、一定の低保
磁力のパーマロイ膜を得るためには厳しい条ｆ１管理が
必要である。また、これらの条（′１を最適化しても必
ずしも面内保磁力が充分小さいｌｆｉにならない場合が
ある。The in-plane coercive force of the sputtered low coercive force layer is not necessarily constant and depends on the sputtering conditions. Among these, the target composition, sputtering pressure, sputtering temperature, etc. have a large effect on the in-plane coercive force, and in order to obtain a permalloy film with a constant low coercive force, strict control of the strip f1 is required. Further, even if these lines ('1) are optimized, the in-plane coercive force may not necessarily become sufficiently small lfi.
一般に低保磁力層を形成するパーマロイ層は透磁率をで
きるだり大ぎくするため、透磁率の大きい組成のバーマ
ロ、イ合金が使用される。例えば１８ｗｔ％Ｆｅ−７８
ｗｔ％Ｎｉ−４ｗｔ％ＭｏｔＩＵ成のパーマロイ合金が
その一例である。さらに面内磁気異方性を小さくしたり
、或は保磁力を小さくしたりづ−るために、上述の組成
を若干変えて例えば磁歪定数を変化さμることも行われ
る。しかしながらターゲラｉ・のパー７０イ組成を、と
くにＮｉのｗｔ％を−１）ｊｌｉの値から±１０％稈億
変えても必ずしも保磁力が充分小さくなるとは限らない
。In general, the permalloy layer that forms the low coercive force layer increases the magnetic permeability, so a Vermalloy alloy with a high magnetic permeability composition is used. For example, 18wt%Fe-78
An example is a permalloy alloy composed of wt% Ni-4wt% MotIU. Furthermore, in order to reduce the in-plane magnetic anisotropy or the coercive force, the above-mentioned composition may be slightly changed to change, for example, the magnetostriction constant. However, even if the par 70 composition of Targera i, in particular the wt% of Ni, is changed by ±10% from the value of -1)jli, the coercive force does not necessarily become sufficiently small.
本発明者はかかる状況にもとづき鋭意研究した結果、従
来のパーマロイ合金に１（１０１１ｒｌｌｌｌ （壬
甲％）双子のＭｏを添加することにより低保磁力層と、
なるパーマ［１イ薄膜の保磁力を容易に充分小さい値に
保てることを見出し本発明に想到した。即ち本発明は、
ＦｅおよびＮｉを主成分どし、第３の添加元素としての
ＭＯ、（：、ｒ 、 Ｃｕなどを含む従来のパーマロイ
合金にその組成比を実質的に変えることなく １００１
００ｍ （重量％）以上のＭｎを添加したパーマロイ
合金からなる磁性層を低保磁力層どする磁気記録媒体で
ある。As a result of intensive research based on this situation, the inventor of the present invention has created a low coercive force layer by adding 1 (1011 rllll (Iko%)) twin Mo to a conventional permalloy alloy.
The inventors have discovered that the coercive force of a thin film can be easily maintained at a sufficiently small value and have come up with the present invention. That is, the present invention
1001 without substantially changing the composition ratio of the conventional permalloy alloy, which contains Fe and Ni as the main components and MO, (:, r, Cu, etc.) as the third additive element.
This is a magnetic recording medium in which a low coercive force layer is a magnetic layer made of a permalloy alloy to which 00m (wt%) or more of Mn is added.
」−述の通り、本発明の低保磁力層どなるパーマロイは
、Ｎｉ及びＦｅを主成分どした従来公知のパーマロイが
適用でき、ＭＯｌＯｒ、Ｃｕ−等の第三元素を含んで良
いことは云うまでもない。又、その膜厚は従来公知の範
囲の数μ７ｎ、以下で適宜目的に応じて設計する必要が
ある。- As mentioned above, the permalloy of the low coercive force layer of the present invention can be a conventionally known permalloy whose main components are Ni and Fe, and it goes without saying that it may also contain a third element such as MOOr, Cu-, etc. Nor. Further, the film thickness is within the conventionally known range of several μ7n, and must be appropriately designed depending on the purpose.
また、垂直磁化層は、膜面に垂直な方向に磁化容易軸を
有し、特公昭５８−９１号公報等で公知の磁気特性を有
する磁性膜が適用できる。従って、特公昭５８−１０７
６４号公報等で公知のｃｏ−Ｑｒ合金膜、膜面に垂直配
向したバリウムフェライト塗股等種々の磁性膜が適用ぐ
き、ｃｏ−Ｃｒ合金膜にＷ（タングステン）、Ｔａ（タ
ンタル）等の第３成分を添加したものでもよい。Further, the perpendicular magnetization layer can be a magnetic film having an axis of easy magnetization in a direction perpendicular to the film surface and having magnetic properties known from Japanese Patent Publication No. 1982-91 and the like. Therefore,
Various magnetic films such as the co-Qr alloy film known in Publication No. 64, barium ferrite coating vertically oriented on the film surface, etc. are applied, and the co-Cr alloy film is coated with W (tungsten), Ta (tantalum), etc. A mixture of three components may also be used.
史に、低保磁力層ど乗ｎ磁化層とは直接接する必要はな
く、接ｊ″１層等をその間に介イ［させても良く、基板
の両側にあつ゛Ｃ心良い。Historically, it is not necessary to directly contact the low coercive force layer with the n-magnetization layer, and a contact layer or the like may be interposed therebetween, and it is convenient to have the low coercive force layer on both sides of the substrate.
・方、第２発明の磁気記Ｑ媒体の製造法において、対向
ターグツ１一式スパッタ法により低保磁）〕層を形成り
ると広範１η１の条件で安定したイ１−７！′Ｌができ
る。In the manufacturing method of the magnetic Q medium of the second invention, when a low coercivity layer is formed by sputtering a set of opposed targets 1, it is stable under a wide range of 1η1 conditions. 'L can be done.
ここで、対向ターゲッＩ一式スバッタ法とは、特開昭５
７−１５８３８０ｊ％公報等で公知のもので、対向した
一組のターゲット間にプラズマ（電子）捕捉のための磁
界を形成して、ターゲットの側方に配置された基板上に
膜形成づ゛るスパッタ法を云う。Here, the facing target I set spatter method is
7-158380j%, etc., which forms a magnetic field for trapping plasma (electrons) between a pair of opposing targets and forms a film on a substrate placed on the side of the target. Refers to sputtering method.
ところで、前述の垂直磁化層も同じ対向ターゲット式ス
パッタ法で作成すると、共に低温膜形成が可能で耐熱性
の低いポリエステルフィルム等が基板として利用できる
上、両層を１つの真空槽内で連続して作成でき、製造コ
ストを人［１］に低減できる。By the way, if the above-mentioned perpendicular magnetization layer is also created using the same facing target sputtering method, both layers can be formed at low temperatures and a polyester film or the like with low heat resistance can be used as the substrate, and both layers can be continuous in one vacuum chamber. The manufacturing cost can be reduced to one person [1].
以下、上述の本発明の詳細を実施例に基いて説明する。Hereinafter, the details of the above-mentioned present invention will be explained based on examples.
第２図は本発明の実施に用いた対向ターゲット式スパッ
タ装置の構成図である。FIG. 2 is a configuration diagram of a facing target type sputtering apparatus used in carrying out the present invention.
図から明らかな通り、木装「ｉは前述の！ｌ！１間昭５
７−１５８３８０号公報で公知の対向ターゲラ１一式ス
バッタ装防と基本的に同じ構成どなっている。As is clear from the diagram, the wooden decoration "i" is the above-mentioned!
The structure is basically the same as that of the opposed target blade 1 set spatter protection known in Japanese Patent Publication No. 7-158380.
１なわち、図において１０は真空槽、２０は真空槽１０
を排気する真空ポンプ等からなる排気系、３０は真空＄
９１０内に所定のガスを導入して真空４？ＮＯ内の圧力
を１０−Ｉ〜ｉｏ−’＋Ｈｏｒｒ程度の所定のガス圧力
に設定するガス導入系である。1, that is, in the figure, 10 is a vacuum chamber, and 20 is a vacuum chamber 10.
Exhaust system consisting of a vacuum pump etc., 30 is a vacuum $
A predetermined gas is introduced into 910 to create a vacuum of 4? This is a gas introduction system that sets the pressure in NO to a predetermined gas pressure of about 10-I to io-'+Horr.
そして、真空槽１０内には、図示の如く真空槽１０の側
板１１．１２に絶縁部材１３．１４を介して固着された
ターゲットホルダーｉｓ、 １６により１体のターゲッ
トＴ＋ 、Ｔ２が、そのスパッタされる面Ｔ’ｓ。In the vacuum chamber 10, one target T+, T2 is sputtered by a target holder IS, 16 fixed to the side plate 11.12 of the vacuum chamber 10 via an insulating member 13.14 as shown in the figure. Rumen T's.
Ｔ２Ｓを空間を隔てて平行に対面するように配設しであ
る。そして、ターゲットＴ＋ 、Ｔ２とそれに対応り゛
るターゲットホルダー１５．１６は、冷却バイブ１５１
．ＩＧｌを介して冷却水によりターゲットＴ＋。The T2S are arranged so as to face each other in parallel across a space. The targets T+, T2 and the corresponding target holders 15 and 16 are attached to the cooling vibrator 151.
．． Target T+ by cooling water via IGl.
Ｔ２．永久磁石１５２，１６２が冷ｉ（Ｉされる。様長
石１５２゜１６２はターゲットＴＩ、−１−２を介して
Ｎ４！ｊ、 Ｓ極が対抗するように設りてあり、従って
磁界はターゲット１−＋ 、 １−２に垂直な方向に、
かつターゲット間のみに膜形成される。なお、１７．１
８は絶縁部材１３、１４及びターゲラ１〜ホルダー１５
．１６をスパッタリング時のプラズマ粒子から保］する
ためとターゲット表面以外の部分の異常放電を防止する
ためのシールドである。T2. Permanent magnets 152 and 162 are cooled. The feldspar 152 and 162 are arranged so that the south poles of the feldspars 152 and 162 are opposed to each other through targets TI and -1-2, so the magnetic field is −+, in the direction perpendicular to 1-2,
And a film is formed only between the targets. In addition, 17.1
8 is insulating members 13 and 14 and targetera 1 to holder 15
．． 16 from plasma particles during sputtering and to prevent abnormal discharge in areas other than the target surface.
また、磁性薄膜が形成される基板４０を保持する基板保
持手段４１は、真空槽１０内のターゲットＴ＋。Further, the substrate holding means 41 that holds the substrate 40 on which the magnetic thin film is formed is a target T+ in the vacuum chamber 10 .
Ｔ２の側方に設けである。基板保持手段４１は、図示省
略した支持ブラケットにより夫々回転自在かつ互いに軸
平行に支持された繰り出しロール４１ａ。It is provided on the side of T2. The substrate holding means 41 is a feed-out roll 41a supported rotatably and parallel to each other by support brackets (not shown).
支持ロール４１ｂ 、 ａ取ロール４１ｃの３個のロー
ルからなり、基板４０をターゲットＴ１．Ｔ２間の空間
に対面するようにスパッタ面ＴＩＳ、Ｔ２Ｓに対して略
直角方向に保持づ°るように配置しである。従って基板
４０は巻取りロール４１ｃによりスパッタ面Ｔｌ５１１
’２Ｓに対して直角方向に移動可１１［である。Consisting of three rolls, a support roll 41b and an a-removal roll 41c, the substrate 40 is positioned at the target T1. The sputtering surfaces TIS and T2S are arranged so as to be held substantially perpendicular to the sputtering surfaces TIS and T2S so as to face the space between T2. Therefore, the substrate 40 is sputtered on the sputtering surface Tl511 by the take-up roll 41c.
'2S is movable in a direction perpendicular to 11.
なお、支持ロール４１ｂはイの表面淘疫が調節可能とな
っている。Incidentally, the support roll 41b has an adjustable surface damping ratio.
一方、スパッタ電力を供給する直流電源からなる電力供
給手段５０はプラス側をアースに、マイナス側をターゲ
ラｈＴ＋ 、Ｔ２に夫々接続Ｊ゛る。従って電力供給手
段５０からのスパッタ電力は、アースをアノードとし、
ターゲットＴ＋、Ｔｚをカソードとして、アノード、カ
ソード間に供給される。On the other hand, a power supply means 50 consisting of a DC power source for supplying sputtering power has its positive side connected to the ground, and its negative side connected to the target cells hT+ and T2, respectively. Therefore, the sputtering power from the power supply means 50 uses the ground as the anode,
The target T+ and Tz are used as cathodes and are supplied between the anode and the cathode.
なお、プレスパッタ時基板４０を保護σるため、基板４
０とターゲットｈ、Ｔ２との間に出入づるシャッター（
図示省略）が設けである。Note that in order to protect the substrate 40 during pre-sputtering, the substrate 4
A shutter that goes in and out between 0 and target h, T2 (
(not shown) is provided.
以上の通り、前述の特開昭５７−１５８３８０号公報の
ものと基本的には同じ構成であり、公知の通り高速低温
スパッタが可能となる。すなわち、ターゲットＴ＋ 、
Ｔ２間の空間に、磁界の作用によりスパッタガスイオン
、スパッタにより放出されたγ電子等が束縛され高密度
プラズマが形成される。As described above, the structure is basically the same as that of the above-mentioned Japanese Patent Application Laid-Open No. 57-158380, and high-speed low-temperature sputtering is possible as is known. That is, target T+,
In the space between T2, sputtering gas ions, γ electrons emitted by sputtering, etc. are bound by the action of the magnetic field, and a high-density plasma is formed.
従って、ターゲットＴ＋ 、Ｔ２のスパッタが促進され
て前記空間より析出量が増大し、基板４０上へのｊ（を
槓速度が増し高速スパッタが出来る上、基板４０がター
ゲットＴ＋ 、Ｔ２の側方にあるので低温スパッタも出
来る。Therefore, the sputtering of the targets T+ and T2 is promoted, the amount of precipitation increases from the space, and the speed of sputtering onto the substrate 40 increases, making it possible to perform high-speed sputtering. Because of this, low-temperature sputtering is also possible.
なお、本発明の対向ターゲット式スパッタ法は、前述の
装置のものに限定されるものでなく、前述の通り一対の
対面させたターゲットの側方に基板を配し、ターゲット
間に垂直方向の磁界を印加してスパッタし、基板上に膜
を形成するスパッタ法を云う。従って、磁界発生手段も
永久磁石でなく、電磁石を用いても良い。また、磁界も
ターゲット間の空間にγ電子等を閉じ込めるものであれ
ば良く、従ってターゲット全面でなく、ターゲット周囲
にのみ発生させた場合も含む。Note that the facing target sputtering method of the present invention is not limited to the above-mentioned apparatus; as mentioned above, a substrate is arranged on the side of a pair of facing targets, and a vertical magnetic field is applied between the targets. This is a sputtering method in which a film is formed on a substrate by sputtering by applying a Therefore, the magnetic field generating means may also be an electromagnet instead of a permanent magnet. Further, the magnetic field may be one that confines γ electrons and the like in the space between the targets, and therefore includes the case where it is generated not over the entire surface of the target but only around the target.
次に１述の対向ターゲット式スパッタ装置により実施し
た本発明に係わる垂直磁気記録媒体の実施例を説明する
。Next, an example of a perpendicular magnetic recording medium according to the present invention, which was implemented using the facing target type sputtering apparatus mentioned above, will be described.
媒体の磁気特性は振動試料型磁力上１で測定して求めた
。The magnetic properties of the medium were determined by measurement using a vibrating sample magnetic force.
二層膜媒体の記録・再生特性は前述の特公昭５８−９１
号公報等で公知のものと同様な補助磁（々励磁型の垂直
型磁気ヘッドを用いて評価した。The recording/reproducing characteristics of the double-layer film media were described in the above-mentioned Japanese Patent Publication No. 58-91.
The evaluation was carried out using an auxiliary magnetic (multiple excitation type) vertical magnetic head similar to the one known in Japanese Patent Publication No.
膜厚及び組成についＣは、螢光Ｘ線装間を用いて予め較
正した曲線から求めた。Regarding the film thickness and composition, C was determined from a curve calibrated in advance using a fluorescent X-ray instrument.
実施例１〜４
下記条件により低保磁力層形成時のＡ「ガス圧を４水準
（実施例１〜４）に変えて、基板上にパーマロイならな
る低保磁力層を作成したのちＧ。Examples 1 to 4 A low coercive force layer was formed on the substrate under the following conditions by changing the gas pressure to four levels (Examples 1 to 4), and then G.
−Ｃｒからなる垂直磁化層を第２図のスパッタ装置を用
いて順次形成して二層膜媒体を作成した。A two-layer film medium was prepared by sequentially forming perpendicular magnetization layers made of -Cr using the sputtering apparatus shown in FIG.
Ａ、装置条件
八−１，低保磁力層
ａ、ターゲットＴ＋ 、Ｔ２材：共ニ０，５ｗｔ％ノＭ
ｎを含有さぜたＭｏ−４ｗｔ％、 Ｎ ｉ −７８ｗｔ
％。A, device conditions 8-1, low coercive force layer a, target T+, T2 material: both 0.5 wt% M
Mo-4wt% containing n, Ni-78wt
%.
Ｆｅ−１８ｗｔ％のパーマロイ
ｂ、基板４０：５０μ瓦厚のポリエチレンテレフタレー
ト（ＰＥＴ）フィルム
Ｃ，ターゲツト７１，７２間隔： １２０ｍ（１，タ
ーゲット表面の磁界：１００〜２００ガウスｅ、ターゲ
ットＴ＋ 、Ｔ２形状
： １００ｍｍ１ Ｘ １５０ｍｍ１＃ Ｘ１２ｍｍ
ｔの矩形［、基板４０とターゲットＴ＋ 、Ｔ２端部の
距離： ２０ｎ＋ｍ
Ａ−２，Ｃｏ−Ｃｒ垂直磁化層
ａ、ターゲラ１−Ｔ−＋、Ｔｚ材：共に：ｃｏ−８０ｗ
ｔ％、 Ｃｒ −２０ｗｔ％の含金
Ｃ，ターゲツト７１，７２間隔： １６０ｍｍｄ、タ
ーゲット表面の磁界：１００〜２００ガウスｅ、ターゲ
ットＴ＋、Ｔ２形状
： １００ｓＬＸ １５０ｍｍＷ Ｘ１２ｍｔの矩
形丁、）＾板４０とターゲットＴ＋ 、Ｔ２端部の距離
：２ｏｍｍ
Ｂ、操作手順
Δ−１．Ａ−２の条件のもとて順次次の如く行ｔ【 つ
ｌこ 。Fe-18wt% permalloy B, substrate 40: 50 μm thick polyethylene terephthalate (PET) film C, target 71, 72 spacing: 120 m (1, magnetic field on target surface: 100 to 200 Gauss e, target T+, T2 shape: 100mm1 X 150mm1# X12mm
Rectangle of t [, Distance between substrate 40 and target T+, T2 end: 20n+m A-2, Co-Cr perpendicular magnetization layer a, Targetera 1-T-+, Tz material: Both: co-80w
t%, Cr -20wt% metal content C, target 71, 72 spacing: 160mmd, magnetic field on target surface: 100-200 gauss e, target T+, T2 shape: 100sL x 150mmW x 12mt rectangular shape, )^ Plate 40 and target T+, T2 end distance: 2 om B, operating procedure Δ-1. Under the conditions of A-2, the following lines are executed sequentially.
ａ、基板を設置後、真空４９１０内を到達真空度が１
ｘ １０’ −ｌ ｏｒｒ以下までｉＪｌ：気り−る。a. After installing the board, the vacuum level within the vacuum 4910 is 1
x 10'-l orr or less iJl: care.
１）、Ａｒ（フルボン）ガスを所定の圧力まで導入し、
３〜５分間のプレスパツタをｔ−ｊない、シ１ｊツタ−
を聞き、基板４０を図示の通りターゲラ］−Ｔ＋ 、Ｔ
２の対向方向に移送しつつ膜形成を行なった。なお、Ａ
−１の場合スパッタ時のＡｒガス圧は０．２５〜ＩＰａ
とした。またΔ−２の場合、０．５Ｐａとした。1) Introducing Ar (fulvon) gas to a predetermined pressure,
3 to 5 minutes of press spatter, 1j ivy
, and set the board 40 as shown in the figure]-T+, T
The film was formed while being transferred in two opposite directions. In addition, A
-1, the Ar gas pressure during sputtering is 0.25~IPa
And so. In addition, in the case of Δ-2, the pressure was set to 0.5 Pa.
Ｃ，スパッタ時投入電力はＡ−１，△−２ともに３ＫＷ
で行なった。C. The power input during sputtering is 3KW for both A-1 and △-2.
I did it.
ｄ、７ｉＳ板温度はＡ−１，Ａ−２はそれぞれ９０°Ｇ
。d, 7iS plate temperature is 90°G for A-1 and A-2, respectively.
.
１３０℃で行った。The temperature was 130°C.
Ｃ９実施結果
第３図に実施例１〜４のスパッタ口４のＡｒガス圧と低
保磁力層の保磁力の関係を示す。C9 Results FIG. 3 shows the relationship between the Ar gas pressure at the sputtering port 4 and the coercive force of the low coercive force layer in Examples 1 to 4.
実施例１〜４の２層膜媒体について、長方形のザンプル
を切り出して、電磁変換特性を評価した。For the two-layer film media of Examples 1 to 4, rectangular samples were cut out and electromagnetic conversion characteristics were evaluated.
測定結果を表−１に示づ。The measurement results are shown in Table-1.
なお、電磁変換特性は、記録時にはテープ走行を４．７
５ｃｍ／秒、再生時には９．５ｃｍ／秒で行なった。In addition, the electromagnetic conversion characteristics are such that the tape running speed is 4.7 when recording.
5 cm/sec, and 9.5 cm/sec during playback.
表 １
実施例５〜９
実施例１〜４において低保磁力層の形成１１１の基板温
度（Ｂ−ｄ ）を６０℃から１３０℃まで５水八督（実
施例５〜９）変化さＵてスパックリングを行った。但し
このときスパッタ時のカス圧（１３−ｂ）はｏ、ｓｐａ
とした。Table 1 Examples 5 to 9 In Examples 1 to 4, the substrate temperature (B-d) in forming the low coercive force layer 111 was changed from 60°C to 130°C (Examples 5 to 9). We did spackling. However, at this time, the scum pressure (13-b) during sputtering is o, spa
And so.
得られた実施例５〜９のり°ンブルについて前述と同様
に低保磁力層の保磁力と再生出力を測定した。その結果
を表１と第４図に示１．１比較例１へ・９
比較例として実施例１〜９にａ３けるターゲット組成（
Ａ−１−８）の１ｙｌｎ添加発を実質的に□ｗｔ％（検
出限麿外）にしたパーマロイターゲットを用い、実施例
１〜９の夫々と同様のｌ１９作成を行った。そして得ら
れたサンプル（比較例１〜９）について低保磁力層の保
磁力と再生出力を■１１定した。The coercive force of the low coercive force layer and the reproduction output of the obtained discs of Examples 5 to 9 were measured in the same manner as described above. The results are shown in Table 1 and Figure 4. 1.1 Comparative Example 1・9 As a comparative example, target composition (
Using a permalloy target in which the 1yln addition of A-1-8) was substantially □wt% (beyond the detection limit), 119 was prepared in the same manner as in Examples 1 to 9. For the obtained samples (Comparative Examples 1 to 9), the coercive force of the low coercive force layer and the reproduction output were determined as follows.
その結果を第３図、第４図１表１に示す。The results are shown in FIGS. 3 and 4, Table 1.
実施例、比較例の比較によりＭｎを添加した方が５１、
り小さい低１７． ｔｉｌｌ力層を形成りることができ
、したかつ−（まり人きい再生出力を示づことがわかる
。、Ｊ、！、：、実施例では、基板４＾１ｑ、スパッタ
圧力の広範囲にｋっで保磁力が小さいｌ（ｉで安定して
おり、安定生産面で非常に右利であることがわかる。Comparison of Examples and Comparative Examples showed that the addition of Mn was 51,
Small low 17. It can be seen that it is possible to form a till force layer and to exhibit a very high reproduction output. It can be seen that the coercive force is small at l(i) and it is stable, and it is very advantageous in terms of stable production.
実施例１０へ・１３おＪ：び比較例１０実施例１〜・９
と同じ装置を用いＵｌｙｌｎの添加量を変えｌご低保（
社力層を形成した。Ｍｎの添加量はｔｔｊ述の比較例と
同じ＜１８Ｆｅ −７８Ｎｉ −４ＭＯ（７）組成のパ
ーマロイターゲラ１−を用い、第２図においてターゲッ
トＴ１の上にＭｎデツプを置き、その数を変えることに
にり調節した。Ｍｎ添加ｍは添加ｆｔｔｏ（比較例１０
）を含めて５水準（実施例１０〜１３）について、スパ
ッタリング時の圧力を０．４Ｐａ、基板温度を９０℃で
スパッタし、低保磁力層を形成した。得られた低保磁力
層の保磁力の測定結果を表２に示す。To Example 10/13 and Comparative Example 10 Examples 1 to 9
Using the same equipment as above, we changed the amount of Ulyln added.
A social power layer was formed. The amount of Mn added is the same as in the comparative example described above, using the Permalite Gera 1- with the composition <18Fe-78Ni-4MO(7), and placing the Mn depth on the target T1 in Fig. 2 and changing its number. I adjusted my grin. Mn addition m is addition ftto (Comparative Example 10
), sputtering was performed at a sputtering pressure of 0.4 Pa and a substrate temperature of 90° C. to form low coercive force layers for five levels (Examples 10 to 13). Table 2 shows the measurement results of the coercive force of the obtained low coercive force layer.
Ｍｎが１０００ρｍ以上含まれているターゲットにより
作成された実施例１０〜１３の低保磁力層の保磁ツノは
Ｍｌｌを含よ（７い比較例１０に比へ℃保磁力が大１Ｊ
に小ざくなっている。The coercive horns of the low coercive force layers of Examples 10 to 13, which were prepared using targets containing 1000 ρm or more of Mn, contained Mll (compared to Comparative Example 10, which had a large coercive force of 1 J).
It's getting smaller.
（ｊス下余白）
表 ２
以上の説明から明らかな通り、本発明の磁気記録媒体に
よれば、低保磁力層に１００１１１１ｍ以上のＭｎが含
まれていると、従来のパーマロイ薄膜に比べて大１１〕
に記録再生感度が向上し、より一層の凸密度記録が可能
となるという大ぎな効果が（：１られた。(j space bottom margin) Table 2 As is clear from the above explanation, according to the magnetic recording medium of the present invention, when the low coercive force layer contains 1001111 m or more of Mn, the magnetic recording medium has a large 11]
The recording/reproducing sensitivity was improved, and recording with even higher convex density became possible, which was a major effect (:1).
第１図は本発明の実施に関係する二層膜媒体の低保磁力
層の保磁力と再生出力の関係を示すグラフ、第２図は本
発明の実施に用いた対向ターゲット式スパッタ装置の説
明図、第３図は実施例Ｊ３よび比較例のスパッタ時のＡ
ｒガス圧と保磁力の関係、第４図は同じく基板温僚−と
保磁力の関係を示すグラフである。
Ｔ＋ 、Ｔ２ ：ターゲット、 １０：真空槽、２０
：排気系、 ３０：ガス導入系、４０：基板、
５０ニスバッタ電源特許出願人 帝 人 株
式 会 礼式 理 人 弁理士 前
１） 純 ＩＷ０．２５ ｊ”、グ ４１）、
’１５１．’ＯＡ＋−刀゛ズ圧η（Ｐｏ、）
才う 図
オ＋１叉Fig. 1 is a graph showing the relationship between the coercive force of the low coercive force layer of a two-layer film medium related to the implementation of the present invention and the reproduction output, and Fig. 2 is an explanation of the facing target type sputtering apparatus used in the implementation of the present invention. Figure 3 shows A during sputtering in Example J3 and Comparative Example.
Similarly, FIG. 4 is a graph showing the relationship between substrate temperature and coercive force. T+, T2: Target, 10: Vacuum chamber, 20
: exhaust system, 30: gas introduction system, 40: substrate,
50 Nisbatta Power Supply Patent Applicant Teijin Co., Ltd. Courtesy Person Patent Attorney Former
1) Pure IW0.25 j”, Gu 41),
'151. 'OA + - sword pressure η (Po,) Figure O + 1 fork
Claims (1)
パーマロイ薄膜からなる低保磁力層及び膜面に垂直方向
に磁化容易軸を有する磁気記録層を順次形成してなる磁
気記録媒体において、前記パーマロイ薄膜のＭｎ含有量
が１００ｐｐｍ（重量％）以上であることを特徴とする
磁気記録媒体。 ２）非磁性の基板上に、Ｍｎ含有量が１００ｐｐｍ（重
量％）以上のＮｉおよびＦｅが主成分のパーマロイ薄膜
からなる低保磁力層及び膜面に垂直な方向に磁化容易軸
を有する磁気記録層を順次形成した磁気記録媒体の製造
法において、前記低保磁力層をスパッタリング法により
形成することを特徴とする磁気記録媒体の製造法。 ３）前記低保磁力層を対向ターゲット式スパッタ法によ
り形成する特許請求の範囲第２項記載の磁気記録媒体の
製造法。 ４）前記磁気記録層を対向ターゲット式スパッタ法によ
り形成する特許請求の範囲第３項記載の磁気記録媒体の
製造法。[Claims] 1) A low coercive force layer made of a permalloy thin film containing Ni and Fe as main components and a magnetic recording layer having an axis of easy magnetization perpendicular to the film surface are sequentially formed on a nonmagnetic substrate. A magnetic recording medium characterized in that the Mn content of the permalloy thin film is 100 ppm (wt%) or more. 2) Magnetic recording having a low coercive force layer made of a permalloy thin film mainly composed of Ni and Fe with an Mn content of 100 ppm (wt%) or more on a nonmagnetic substrate, and an axis of easy magnetization in the direction perpendicular to the film surface. A method for manufacturing a magnetic recording medium in which layers are sequentially formed, characterized in that the low coercive force layer is formed by a sputtering method. 3) The method of manufacturing a magnetic recording medium according to claim 2, wherein the low coercive force layer is formed by a facing target sputtering method. 4) The method of manufacturing a magnetic recording medium according to claim 3, wherein the magnetic recording layer is formed by a facing target sputtering method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15399684A JPS6134723A (en) | 1984-07-26 | 1984-07-26 | Magnetic recording medium and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15399684A JPS6134723A (en) | 1984-07-26 | 1984-07-26 | Magnetic recording medium and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6134723A true JPS6134723A (en) | 1986-02-19 |
| JPH0542052B2 JPH0542052B2 (en) | 1993-06-25 |
Family
ID=15574634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15399684A Granted JPS6134723A (en) | 1984-07-26 | 1984-07-26 | Magnetic recording medium and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6134723A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5677390A (en) * | 1996-09-26 | 1997-10-14 | Albemarle Corporation | Process for brominating polystyrenic resins |
| US5686538A (en) * | 1996-09-26 | 1997-11-11 | Albemarle Corporation | Process for brominating polystyrenic resins |
| US5767203A (en) * | 1996-09-26 | 1998-06-16 | Albemarle Corporation | Process for brominated styrenic polymers |
| US5916978A (en) * | 1996-09-26 | 1999-06-29 | Albemarle Corporation | Process for brominated styrenic polymers |
| US6133381A (en) * | 1996-09-26 | 2000-10-17 | Albelmarle Corporation | Brominated polystyrenic flame retardants |
| US6232393B1 (en) | 1996-09-26 | 2001-05-15 | Albemarle Corporation | Polymers flame retarded with brominated polystyrenic resins |
| US6232408B1 (en) | 1996-09-26 | 2001-05-15 | Albemarle Corporation | Brominated polstyrenic resins |
| US6235831B1 (en) | 1996-09-26 | 2001-05-22 | Albemarle Corporation | Polymer compositions containing brominated polystyrenic resins |
| US6235844B1 (en) | 1996-09-26 | 2001-05-22 | Albemarle Corporation | Brominated polystyrenic resins |
| US6326439B1 (en) | 1996-09-26 | 2001-12-04 | Albemarle Corporation | Process for brominating polystyrenic resins |
| USRE37902E1 (en) | 1996-06-14 | 2002-11-05 | Albemarle Corporation | Brominated polystyrene having improved thermal stability and color and process for the preparation thereof |
| US6518368B2 (en) | 1996-06-14 | 2003-02-11 | Albemarle Corporation | Brominated polystyrene having improved thermal stability and color and process for the preparation thereof |
| US6521714B2 (en) | 1996-09-26 | 2003-02-18 | Albemarle Corporation | Brominated polystyrenic resins |
-
1984
- 1984-07-26 JP JP15399684A patent/JPS6134723A/en active Granted
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE37902E1 (en) | 1996-06-14 | 2002-11-05 | Albemarle Corporation | Brominated polystyrene having improved thermal stability and color and process for the preparation thereof |
| US6518368B2 (en) | 1996-06-14 | 2003-02-11 | Albemarle Corporation | Brominated polystyrene having improved thermal stability and color and process for the preparation thereof |
| US6232393B1 (en) | 1996-09-26 | 2001-05-15 | Albemarle Corporation | Polymers flame retarded with brominated polystyrenic resins |
| US6232408B1 (en) | 1996-09-26 | 2001-05-15 | Albemarle Corporation | Brominated polstyrenic resins |
| US5852132A (en) * | 1996-09-26 | 1998-12-22 | Albemarle Corporation | Process for brominating polystyrenic resins |
| US5916978A (en) * | 1996-09-26 | 1999-06-29 | Albemarle Corporation | Process for brominated styrenic polymers |
| US6133381A (en) * | 1996-09-26 | 2000-10-17 | Albelmarle Corporation | Brominated polystyrenic flame retardants |
| US6207765B1 (en) | 1996-09-26 | 2001-03-27 | Albemarle Corporation | Process for brominated styrenic polymers |
| US5677390A (en) * | 1996-09-26 | 1997-10-14 | Albemarle Corporation | Process for brominating polystyrenic resins |
| US5852131A (en) * | 1996-09-26 | 1998-12-22 | Albemarle Corporation | Process for brominating polystyrenic resins |
| US6235831B1 (en) | 1996-09-26 | 2001-05-22 | Albemarle Corporation | Polymer compositions containing brominated polystyrenic resins |
| US6235844B1 (en) | 1996-09-26 | 2001-05-22 | Albemarle Corporation | Brominated polystyrenic resins |
| US6326439B1 (en) | 1996-09-26 | 2001-12-04 | Albemarle Corporation | Process for brominating polystyrenic resins |
| US5767203A (en) * | 1996-09-26 | 1998-06-16 | Albemarle Corporation | Process for brominated styrenic polymers |
| US5686538A (en) * | 1996-09-26 | 1997-11-11 | Albemarle Corporation | Process for brominating polystyrenic resins |
| US6521714B2 (en) | 1996-09-26 | 2003-02-18 | Albemarle Corporation | Brominated polystyrenic resins |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0542052B2 (en) | 1993-06-25 |
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