JPS62261136A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS62261136A JPS62261136A JP61105357A JP10535786A JPS62261136A JP S62261136 A JPS62261136 A JP S62261136A JP 61105357 A JP61105357 A JP 61105357A JP 10535786 A JP10535786 A JP 10535786A JP S62261136 A JPS62261136 A JP S62261136A
- Authority
- JP
- Japan
- Prior art keywords
- bonding pad
- film
- semiconductor device
- insulating
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 230000001681 protective effect Effects 0.000 claims description 13
- 239000000523 sample Substances 0.000 abstract description 16
- 238000000034 method Methods 0.000 abstract description 4
- 230000005012 migration Effects 0.000 abstract description 3
- 238000013508 migration Methods 0.000 abstract description 3
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- 238000007689 inspection Methods 0.000 abstract 1
- 238000012360 testing method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 241001422033 Thestylus Species 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a semiconductor device.
従来、トランジスタや集積回路（ＩＣ）等の半導体装置
のボンティングパッド部の構造は第２図に示すごとく、
千尋体基板４上に絶縁膜３が形成され、この絶縁膜３の
上に金属膜からなる配線及びポンティングパッド２を形
成した後、表面捕獲の為、ボンディングパッド２の一部
を除く表面に絶縁保護膜ｌが被覆されているものであっ
た。Conventionally, the structure of the bonding pad portion of semiconductor devices such as transistors and integrated circuits (ICs) is as shown in Figure 2.
An insulating film 3 is formed on a chihiro body substrate 4, and after forming wiring made of a metal film and bonding pads 2 on this insulating film 3, the surface except for a part of the bonding pads 2 is coated to capture the surface. It was covered with an insulating protective film l.
上述した従来のボンディングパッド部を有する半導体装
置では、第２図で示したように半導体基板４に素子を形
成後、自動プローバ等を使用した金属探針５を接触させ
て、特性検査を行うが、自動プローバの装置の設定から
通常、全組探針５には圧力（以下針圧という）が加わる
。この為ボンディングパッド２には凹部が形成されたり
、又はボンディングパッド２が突き抜かれ金属探針５が
ボンディングパッド下の絶縁膜３上に達し、さらに金属
性探針５の弾力性から絶縁膜３よシ柔かいボンディング
パッドの横力向へとすべるという現象が生じていた。す
なわち、第２図において金属探針５が矢印の方向にすペ
ク、絶縁保護膜１の壁６偽所に移動するという現象であ
る。In the conventional semiconductor device having the above-mentioned bonding pad section, after forming an element on the semiconductor substrate 4 as shown in FIG. 2, a characteristic test is performed by contacting it with a metal probe 5 using an automatic prober or the like. Normally, pressure (hereinafter referred to as needle pressure) is applied to all sets of probes 5 due to the settings of the automatic prober device. For this reason, a recess is formed in the bonding pad 2, or the bonding pad 2 is pierced and the metal probe 5 reaches the top of the insulating film 3 under the bonding pad. A phenomenon occurred in which the soft bonding pad slipped in the direction of the lateral force. That is, in FIG. 2, the metal probe 5 moves in the direction of the arrow to the wall 6 of the insulating protective film 1.
金属探針５がポンティングパッドの中央付近に位置合わ
せされている場合には数十μｍ程度の横すベシがあって
も特に影響鉱ないが、金属探針５がボンディングパッド
２の端の方へ位置合わせになると、針圧による横すべり
は、絶縁保護膜１の壁６で停止させられる。これにより
これまで横方向と下方向へと二分でれてい友針圧は下方
向だけに集中する為、絶縁膜３は針圧に耐えきれず、ク
ラック７が生じてしまう。このクラック７の生じたボン
ディングパッド２に電圧が印加されると、ボンディング
パッド２の一部にマイグレーションが発生し、ボンディ
ングパッド２は半導体基板４に短絡してしまい、半導体
装置の製造歩留りや信頼性を低下させるという問題があ
った。If the metal probe 5 is aligned near the center of the bonding pad 2, there will be no particular influence even if there is a horizontal bevel of several tens of μm, but if the metal probe 5 is positioned near the edge of the bonding pad 2. When the position is aligned, the lateral sliding caused by the stylus pressure is stopped by the wall 6 of the insulating protective film 1. As a result, the needle pressure is concentrated only in the downward direction, whereas it has been divided into two in the lateral direction and the downward direction, so that the insulating film 3 cannot withstand the needle pressure, and cracks 7 occur. When a voltage is applied to the bonding pad 2 with this crack 7, migration occurs in a part of the bonding pad 2, and the bonding pad 2 is short-circuited to the semiconductor substrate 4, which reduces the manufacturing yield and reliability of the semiconductor device. There was a problem of lowering the .
本発明の目的は、製造歩留りと信頼性の向上した半導体
装＃を提供することにある。An object of the present invention is to provide a semiconductor device with improved manufacturing yield and reliability.
本発明の半導体装ｔｉ！、は、半導体基板上に絶縁膜を
介して金ＰＡ［からなる配線とボンディングパッドを形
成し、その上面に絶縁保護膜を形成してなる半導体装置
であって、絶縁保護膜をポンチインクハツトより離して
形成したものでるる。Semiconductor device of the present invention ti! is a semiconductor device in which wiring and bonding pads made of gold PA are formed on a semiconductor substrate via an insulating film, and an insulating protective film is formed on the upper surface of the wiring, and the insulating protective film is formed using a punch ink hat. It is formed separately.
次に本発明の実施例について図面を診照して説明する。 Next, embodiments of the present invention will be described with reference to the drawings.
第１図（ａ） 、 （ｂ）は本発明の一実施例の平面図
及びＡ−Ａ’線断面である。FIGS. 1(a) and 1(b) are a plan view and a cross section taken along the line AA' of an embodiment of the present invention.
第１図（ａｌ 、 （ｂ）において、半導体基板４の上
面には酸化シリコン等からなる絶縁膜３が０．５〜１．
０μｍの厚さに形成されており、この絶縁膜３上には、
金属膜からなるボンディングパッド２とこれに接続する
配［２Ａとが形成されている。そしてこの金属膜上には
酸化膜や窒化膜からなる絶縁保護膜１が形成されている
がこの絶縁保護膜１はボンディングパッド２より距離ｄ
だけ離れて形成されている。In FIGS. 1A and 1B, an insulating film 3 made of silicon oxide or the like is formed on the upper surface of a semiconductor substrate 4 with a thickness of 0.5 to 1.
It is formed to a thickness of 0 μm, and on this insulating film 3,
A bonding pad 2 made of a metal film and a wiring 2A connected thereto are formed. An insulating protective film 1 made of an oxide film or a nitride film is formed on this metal film, and this insulating protective film 1 is separated by a distance d from the bonding pad 2.
Only formed apart.
この距離ｄは半導体装置の検査工程においてボンディン
グパッド２に接触する金属探針先端の直径よシやや大き
いことが望ましい。It is desirable that this distance d is slightly larger than the diameter of the tip of the metal probe that comes into contact with the bonding pad 2 in the semiconductor device testing process.
このように形成された本実施例においては、半導体装置
の検査工程におけるプローバの金属探針が、ボンディン
グパッド２の端部に位置合せされて横すべりを起したと
しても、金属探針の先端はボンティングパッド２より離
れた絶縁保護膜１の側壁６で停止する。従って、停止位
置下の絶縁膜３にクラックが生じたとしても、ボンディ
ングパッド２に発生するマイグレーションにより、ボン
ディングパッド２と半導体基板４との短絡は抑制された
ものとなる。In this embodiment formed in this way, even if the metal probe of the prober in the semiconductor device testing process is aligned with the end of the bonding pad 2 and causes a side slip, the tip of the metal probe will remain in the bonding pad 2. It stops at the side wall 6 of the insulating protective film 1 which is away from the tipping pad 2. Therefore, even if a crack occurs in the insulating film 3 below the stop position, the short circuit between the bonding pad 2 and the semiconductor substrate 4 is suppressed due to migration occurring in the bonding pad 2.
以上説明したように本発明は、ボンティングパッドから
離して絶縁保護膜を形成することによジボンディングパ
ッド上での金属探針の横すべりを停止させた絶縁保護膜
の障壁が除かれ、特性検査時の金属探針の針圧による絶
縁膜のクラックの発生及びボンディングパッドと半導体
基板との短絡を防止し、製造歩留と製品の信頼性を高め
た半導体装置が得られる効果がある。As explained above, in the present invention, by forming an insulating protective film away from the bonding pad, the barrier of the insulating protective film that stops the horizontal sliding of the metal probe on the bonding pad is removed, and the characteristic test This has the effect of preventing cracks in the insulating film and short circuits between the bonding pad and the semiconductor substrate due to the pressure of the metal probe at the time of use, and providing a semiconductor device with improved manufacturing yield and product reliability.
第１図（ａｌ 、 ｊｂＪは本発明の一実施例の平面図
及びＡ−Ａ’もρ断面図第２図は従来の半導体装置のボ
ンティングパッド部の断面図である。
１・・・・・・絶縁保護膜、２・・・・・・ボンディン
グパッド、３・・・・・・絶縁膜、４・・・・・・半導
体基板、５・・・・・・金属探針、６・・・・・・壁、
７・・・・・・クラック代理人 弁理士 内 原
ｗ ゛日
ゝ＼
躬１面
第乙 図FIG. 1 (al, jbJ is a plan view of one embodiment of the present invention, and A-A' is also a ρ cross-sectional view. FIG. 2 is a cross-sectional view of a bonding pad portion of a conventional semiconductor device. 1... ... Insulating protective film, 2 ... Bonding pad, 3 ... Insulating film, 4 ... Semiconductor substrate, 5 ... Metal probe, 6 ... ····wall,
7... Crack agent Patent attorney Uchihara
w ゛日ゝ＼ 躬 1st page 2nd figure
Claims (1)
ンディングパッドを形成し、その上面に絶縁保護膜を形
成してなる半導体装置に於いて、前記絶縁保護膜は前記
ボンディングパッドより離れて形成されていることを特
徴とする半導体装置。In a semiconductor device in which wiring and bonding pads made of a metal film are formed on a semiconductor substrate via an insulating film, and an insulating protective film is formed on the upper surface thereof, the insulating protective film is formed at a distance from the bonding pad. A semiconductor device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61105357A JPS62261136A (en) | 1986-05-07 | 1986-05-07 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61105357A JPS62261136A (en) | 1986-05-07 | 1986-05-07 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62261136A true JPS62261136A (en) | 1987-11-13 |
Family
ID=14405472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61105357A Pending JPS62261136A (en) | 1986-05-07 | 1986-05-07 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62261136A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050020708A (en) * | 2003-08-22 | 2005-03-04 | 소니 가부시끼 가이샤 | Electric circuit board |
| JP2005294676A (en) * | 2004-04-02 | 2005-10-20 | Matsushita Electric Ind Co Ltd | Semiconductor device |
-
1986
- 1986-05-07 JP JP61105357A patent/JPS62261136A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050020708A (en) * | 2003-08-22 | 2005-03-04 | 소니 가부시끼 가이샤 | Electric circuit board |
| JP2005294676A (en) * | 2004-04-02 | 2005-10-20 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| JP4525143B2 (en) * | 2004-04-02 | 2010-08-18 | パナソニック株式会社 | Semiconductor device |
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