JPS62247531A - Method for washing - Google Patents
Method for washingInfo
- Publication number
- JPS62247531A JPS62247531A JP9033886A JP9033886A JPS62247531A JP S62247531 A JPS62247531 A JP S62247531A JP 9033886 A JP9033886 A JP 9033886A JP 9033886 A JP9033886 A JP 9033886A JP S62247531 A JPS62247531 A JP S62247531A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- holder
- bernoulli
- shade
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000005406 washing Methods 0.000 title abstract description 8
- 239000007788 liquid Substances 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims description 29
- 230000000694 effects Effects 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 12
- 230000007423 decrease Effects 0.000 abstract description 3
- 238000007654 immersion Methods 0.000 abstract description 2
- 239000002390 adhesive tape Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 33
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000012530 fluid Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
この発明は、半導体ウェーハ等の洗浄方法にかかり、
ウェーハを搭載したホルダーと覆いとの間で周辺方向に
洗浄液を流し、洗浄液がウェーハ及びホルダー上に及ぼ
すベルヌーイ効果を利用して付着物を洗浄することによ
り、
スクライビング後の半導体ウェーハ等に対する良好な洗
浄効果を得、かつ自動搬送を兼ねることも可能として、
半導体装置等の生産性、信頼性などの向上を達成するも
のである。[Detailed Description of the Invention] [Summary] The present invention relates to a method for cleaning semiconductor wafers, etc., in which a cleaning liquid is flowed in a peripheral direction between a holder on which a wafer is mounted and a cover, and the cleaning liquid exerts a Bernoulli effect on the wafer and the holder. By using this effect to clean the deposits, it is possible to obtain a good cleaning effect on semiconductor wafers, etc. after scribing, and it can also be used for automatic transportation.
The aim is to improve the productivity and reliability of semiconductor devices, etc.
本発明は洗浄方法、特に半導体装置等の製造プロセスに
おいてその表面に付着した粉末、細片等を除去する洗浄
方法の改善に関する。The present invention relates to a cleaning method, and particularly to an improvement in a cleaning method for removing powder, debris, etc. attached to the surface of a semiconductor device during the manufacturing process thereof.
半導体装置等の製造プロセスにおいて、ウェーハ等の汚
染を防止、除去することは安定性、信頼性などの大きな
鍵であり、各工程における洗浄方法は、汚染の形態、汚
染物質などに対応するのみならず、洗浄対象物の状態、
製造ラインの搬送方法等にも良く適合して十分な効果を
得ることが必要である。In the manufacturing process of semiconductor devices, etc., preventing and removing contamination from wafers, etc. is a key to stability, reliability, etc., and the cleaning method used in each process must be determined based on the form of contamination, contaminants, etc. First, the condition of the object to be cleaned,
It is necessary to be well adapted to the transport method of the production line and to obtain sufficient effects.
半導体装置を製造するには、周知の如く出来るだけ大き
い半導体ウェーハ上に所要の集積回路等を多数同時に形
成し、このウェーハを所定の位置でスクライビング（ｓ
ｃｒｉｂｉｎｇ） して個々のチップとする。As is well known, in order to manufacture semiconductor devices, a large number of required integrated circuits, etc. are simultaneously formed on a semiconductor wafer as large as possible, and this wafer is scribed at predetermined positions.
cribbing) into individual chips.
従来量も広（行われているスクライビング方法は、ダイ
ヤモンドカッタ、ダイヤモンドブレードなどを用い例え
ば１５０〜２ｏｏｌｎｎ程度を裏面側に残してウェーハ
に格子状の切り傷を入れ、これを複数枚ホルダーで支持
して洗浄槽内で洗浄した後に、ゴムローラにかけて切り
傷の位置で分割する方法であるが、この従来方法では、
最後の分割の際に集積回路等にも圧力が加わること、洗
浄工程はバッチ方式でインライン方式の自動搬送には好
ましくないこと等の問題点がある。Traditionally, the amount of scribing is wide (the scribing method used is to make a grid-like cut on the wafer using a diamond cutter, diamond blade, etc., leaving about 150 to 200 mm on the back side, and then support this with a holder). After cleaning in a cleaning tank, the pieces are divided by rubber rollers at the cut locations, but in this conventional method,
There are problems such as pressure being applied to the integrated circuits etc. during the final division, and the cleaning process being a batch process which is not suitable for in-line automatic transport.
この点に対処する目的から、第２図（ａｌに模式側面図
を示す如く、予め裏面にテープ１２を接着して裏面まで
スクライビングを行ったウェーハ１１をフレーム１３で
支持し、水などを上方からジェットノズル１４等で注い
で洗浄する方法が導入されつつある。For the purpose of dealing with this point, as shown in the schematic side view in FIG. A method of cleaning by pouring with a jet nozzle 14 or the like is being introduced.
しかしながらこの方法は洗浄効果が一様に全面に及び難
く、しかも第２図（ｂ）の模式平面図に示す様に、スク
ライビングによって生じたＳｔ鉛粉末どをウェーハＩｌ
全面に散在させる傾向がある。この様に散在して残存し
たｓｉ粉末等は、洗浄後に各チ・ノブを真空チャックで
吸着する際にチップ表面の集積回路等に損傷を与える危
険性が大きい。However, this method has difficulty in uniformly cleaning the entire surface of the wafer, and as shown in the schematic plan view of FIG.
They tend to be scattered all over the surface. There is a great risk that the Si powder etc. that remain scattered in this way will damage the integrated circuits etc. on the surface of the chip when each chip/knob is sucked with a vacuum chuck after cleaning.
半導体装置等の生産性、信頼性等を向上するために、ウ
ェーハの上方からジェットノズル等で水を注ぐ洗浄方法
の上述の如き洗浄効果の不足を解決し、かつインライン
方式の自動搬送に好適な洗浄方法が強く要望されている
。In order to improve the productivity and reliability of semiconductor devices, etc., we have developed a cleaning method that solves the above-mentioned lack of cleaning effect by pouring water from above the wafer using a jet nozzle, etc., and is suitable for in-line automatic transportation. A cleaning method is strongly desired.
前記問題点は、ウェーハを搭載したホルダーを覆いの下
に位置させ、液体を該覆いと該ウェーハ及び該ホルダー
との間で周辺方向に流し、該液体が該ウェーハ及び該ホ
ルダー上に及ぼすベルヌーイ効果を利用して酸ウェーハ
及び該ホルダー上の付着物を洗浄する本発明による洗浄
方法により解決される。The problem is that a holder carrying a wafer is placed under a cover, and a liquid flows circumferentially between the cover, the wafer, and the holder, and the liquid exerts a Bernoulli effect on the wafer and the holder. The problem is solved by the cleaning method according to the present invention, which uses the cleaning method to clean the acid wafer and deposits on the holder.
ベルヌーイ（Ｄ、Ｂｅｒｎｏｕｌｌｉ）の定理によれば
、粘性がなく縮まない流体の定常な流れでは、１つの流
線について、
ｐ＋’Ａｐｖ Ｚ ＋ｒ ｚ −一定
が成立する。ただし、ｐは圧力、ρは流体の密度、■は
流速、γは流体の単位体積の重さ、２は基準水平面から
の高さである。なお渦がない場合には場所にかかわらず
この関係が成立し、縮む流体、非定常運動等の場合にも
前記式を一般化した弐が成立する。According to Bernoulli's theorem, in a steady flow of a fluid that has no viscosity and does not shrink, p+'Apv Z +r z -constant holds for one streamline. However, p is the pressure, ρ is the density of the fluid, ■ is the flow velocity, γ is the weight of the unit volume of the fluid, and 2 is the height from the reference horizontal plane. Note that this relationship holds true regardless of the location when there is no vortex, and also holds true in the case of contracting fluid, unsteady motion, etc., which is a generalization of the above formula.
この定理は、流速Ｖが大きくなれば圧力ｐが小さくなり
負値にもなり得ることを示しており、この圧力が及ぼす
効果をベルヌーイ効果と呼ぶ。This theorem shows that as the flow velocity V increases, the pressure p decreases and can even take a negative value, and the effect exerted by this pressure is called the Bernoulli effect.
本発明はこの効果を応用するもので、ウェーハを搭載し
たホルダーを覆いの下に位置させ、水などの液体をこの
覆いとウェーハ及びホルダーとの間で周辺方向に流し、
液体がウェーハ及びホルダーに及ぼす負圧力等を利用し
てウェーハ及びホルダー上の付着物を洗浄する。The present invention applies this effect by placing a holder carrying a wafer under a cover, and flowing a liquid such as water in a peripheral direction between the cover, the wafer, and the holder.
The deposits on the wafer and holder are cleaned using negative pressure exerted by the liquid on the wafer and holder.
この様にベルヌーイ効果を利用することにより付着する
粉末、細片等が流し出され、良好な洗浄効果が得られる
。By utilizing the Bernoulli effect in this manner, adhering powder, debris, etc. are washed out, and a good cleaning effect can be obtained.
更にウェーハ及びホルダーを負圧力で引き上げるために
洗浄中に搬送することも可能であり、工程間の時間を短
縮する効果も得られる。Furthermore, it is also possible to transport the wafer and holder during cleaning in order to pull them up under negative pressure, which also has the effect of shortening the time between processes.
以下本発明を実施例により具体的に説明する。 The present invention will be specifically explained below using examples.
第１図は本発明の実施例を示し、同図（ａ）はその模式
平面図、同図（ｂｌはそのｘ−Ｘ断面図である。FIG. 1 shows an embodiment of the present invention, and FIG. 1A is a schematic plan view thereof, and FIG.
同図において、１はウェーハ、２はホルダー、２ａは例
えばテープを用いたホルダー２の底面部分でウェーハ１
が裏面で接着されており、２ｂはそのフレーム部分、４
は前記覆い（以下ベルヌーイ傘と呼ぶ）、５はベルヌー
イ傘下面に設けられた洗浄水吐出口、６は洗浄水の流線
の例、７は導水管、８は第２の覆いである。In the figure, 1 is a wafer, 2 is a holder, and 2a is a bottom part of the holder 2 using tape, for example, and the wafer 1 is
is glued on the back side, 2b is the frame part, 4
5 is a washing water outlet provided on the lower surface of the Bernoulli umbrella, 6 is an example of a streamline of washing water, 7 is a water conduit, and 8 is a second cover.
本実施例では、前記従来例と同様に予め裏面にテープ２
ａを接着して裏面までスクライビングを行ったウェーハ
１を洗浄するに際して、このウェーハｌを搭載したホル
ダー２をベルヌーイ傘４の下に置き、ベルヌーイ傘４と
ウェーハ１及びホルダー２との間に流線６で模式的に示
す如く周辺方向に洗浄水を流している。In this embodiment, as in the conventional example, tape 2 is placed on the back surface in advance.
When cleaning the wafer 1 on which the wafer a has been bonded and scribed to the back side, the holder 2 with the wafer l mounted thereon is placed under the Bernoulli umbrella 4, and a streamline is created between the Bernoulli umbrella 4, the wafer 1, and the holder 2. As schematically shown at 6, the cleaning water is flowed in the peripheral direction.
ベルヌーイ傘４は中心から周辺に向かって次第に低くな
りその下方の間隙が狭まって、ウェーハ１及びホルダー
２の上面近傍で洗浄水の流速が大きくベルヌーイの定理
により前記の如く圧力が減少し負圧力を生じて、付着す
る粉末、細片等を引き上げながら押流す。また同時にウ
ェーハ１及びホルダー２そのものも引き上げられる。The Bernoulli umbrella 4 gradually becomes lower from the center to the periphery, and the gap below it narrows, and the flow rate of the cleaning water is high near the top surfaces of the wafer 1 and holder 2, and the pressure decreases as described above due to Bernoulli's theorem, creating a negative pressure. The powder, particles, etc. that are generated and adhered are pulled up and washed away. At the same time, the wafer 1 and holder 2 themselves are also pulled up.
本実施例により洗浄したウェーハは、先に第２図を参照
して説明した従来例による洗浄結果に比較して、Ｓｉ細
片、粉末その他の付着物がＡ程度以下に減少し、半導体
装置の歩留まり、信頼性の向上に顕著な効果が得られて
いる。In the wafer cleaned according to this example, compared to the cleaning result according to the conventional example explained with reference to FIG. Remarkable effects have been achieved in improving yield and reliability.
なお前記実施例はスクライビング後のウェーハを洗浄対
象としているが、これより前工程のウェーハ等について
も同様の効果が得られることは明白である。Although the above-mentioned embodiment cleans wafers after scribing, it is clear that similar effects can be obtained on wafers and the like that have been subjected to previous processes.
以上説明した如く本発明によれば、例えば浸漬洗浄が制
約されるスクライビング後の半導体ウェーハなどについ
て容易に良好な洗浄効果が得られ、かつインライン方式
の自動搬送を兼ねることも可能であって、半導体装置等
の生産性、信鎖性などの向上に大きい効果が得られる。As explained above, according to the present invention, it is possible to easily obtain a good cleaning effect on, for example, semiconductor wafers after scribing, for which immersion cleaning is restricted, and it is also possible to carry out automatic conveyance using an in-line method. Great effects can be obtained in improving the productivity of equipment, reliability, etc.
第１図は本発明の実施例の模式図、 第２図は従来例の模式図である。 図において、 １はウェーハ、 ２はホルダー、 ２ａハウエーハ１が接着されたホルダー２の底面部分、 ２ｂはホルダー２のフレーム部分、 ４は覆い（ベルヌーイ傘）、 ５は洗浄水吐出口、 ６は洗浄水の流線の例、 ７は導水管、 ８は第２の覆いを示す。 実施ｆｙ−博感４図 ｎ γ 耐 FIG. 1 is a schematic diagram of an embodiment of the present invention, FIG. 2 is a schematic diagram of a conventional example. In the figure, 1 is a wafer, 2 is a holder, 2a The bottom part of the holder 2 to which the wafer 1 is attached, 2b is the frame part of holder 2, 4 is a cover (Bernoulli umbrella), 5 is a cleaning water outlet; 6 is an example of streamlines of washing water, 7 is a water pipe, 8 indicates the second cover. Implementation fy-Hakkan 4 diagram n γ resistance
Claims (1)
体を該覆いと該ウェーハ及び該ホルダーとの間で周辺方
向に流し、該液体が該ウェーハ及び該ホルダー上に及ぼ
すベルヌーイ効果を利用して該ウェーハ及び該ホルダー
上の付着物を洗浄することを特徴とする洗浄方法。A holder carrying a wafer is positioned under a shroud, and a liquid is caused to flow in a circumferential direction between the shroud, the wafer, and the holder, and the Bernoulli effect of the liquid on the wafer and the holder is utilized to generate the liquid. A cleaning method characterized by cleaning deposits on a wafer and the holder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61090338A JPH0828342B2 (en) | 1986-04-18 | 1986-04-18 | Cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61090338A JPH0828342B2 (en) | 1986-04-18 | 1986-04-18 | Cleaning method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62247531A true JPS62247531A (en) | 1987-10-28 |
| JPH0828342B2 JPH0828342B2 (en) | 1996-03-21 |
Family
ID=13995732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61090338A Expired - Fee Related JPH0828342B2 (en) | 1986-04-18 | 1986-04-18 | Cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0828342B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6497241B1 (en) * | 1999-12-23 | 2002-12-24 | Lam Research Corporation | Hollow core spindle and spin, rinse, and dry module including the same |
| JP2017092397A (en) * | 2015-11-16 | 2017-05-25 | 株式会社東京精密 | Wafer transfer apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745233A (en) * | 1980-08-30 | 1982-03-15 | Konishiroku Photo Ind Co Ltd | Cleaning and drying device for spinner |
| JPS587830A (en) * | 1981-07-08 | 1983-01-17 | Hitachi Ltd | Article washing method and device thererof |
-
1986
- 1986-04-18 JP JP61090338A patent/JPH0828342B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745233A (en) * | 1980-08-30 | 1982-03-15 | Konishiroku Photo Ind Co Ltd | Cleaning and drying device for spinner |
| JPS587830A (en) * | 1981-07-08 | 1983-01-17 | Hitachi Ltd | Article washing method and device thererof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6497241B1 (en) * | 1999-12-23 | 2002-12-24 | Lam Research Corporation | Hollow core spindle and spin, rinse, and dry module including the same |
| JP2017092397A (en) * | 2015-11-16 | 2017-05-25 | 株式会社東京精密 | Wafer transfer apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0828342B2 (en) | 1996-03-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |