JPS62245643A - Ultrasonic bonding method for covered wire - Google Patents

Ultrasonic bonding method for covered wire

Info

Publication number
JPS62245643A
JPS62245643A JP61087958A JP8795886A JPS62245643A JP S62245643 A JPS62245643 A JP S62245643A JP 61087958 A JP61087958 A JP 61087958A JP 8795886 A JP8795886 A JP 8795886A JP S62245643 A JPS62245643 A JP S62245643A
Authority
JP
Japan
Prior art keywords
wire
bonding
covering
laser beam
wedge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61087958A
Other languages
Japanese (ja)
Inventor
Toru Mita
三田 徹
Michiro Takahashi
道郎 高橋
Shinichi Arai
荒井 信一
Masakazu Ozawa
小沢 正和
Mitsukiyo Tani
光清 谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP61087958A priority Critical patent/JPS62245643A/en
Publication of JPS62245643A publication Critical patent/JPS62245643A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/4556Disposition, e.g. coating on a part of the core
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45565Single coating layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554Coating
    • H01L2224/45599Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48464Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/4917Crossed wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313Wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313Wedge
    • H01L2224/78314Shape
    • H01L2224/78317Shape of other portions
    • H01L2224/78318Shape of other portions inside the capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/786Means for supplying the connector to be connected in the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/8521Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/85214Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015Shape
    • H01L2924/1016Shape being a cuboid
    • H01L2924/10161Shape being a cuboid with a rectangular active surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Abstract

PURPOSE:To prevent the mixture of a foreign substance as well as to prevent a semiconductor integrated circuit from mulfunctioning by a method wherein the covering of a covered wire is destructed by projecting a laser beam on the covered wire protruded from the through hole of a wedge, and the destructed covering is removed by the force of vacuum suction. CONSTITUTION:A supersonic transmitter 9, a horn 10 with which vibrations will be transmitted, and a bonding wedge 8 and the like with which a wire 11 will be bonded are provided on the supersonic bonding system of a covered wire. The laser beam sent from a laser beam generator 1 is made to irradiate on the covering 12 protruded from the through hole 19 of the wedge 8. The covering 12 is destructed by the projection of the laser beam, the destructed covering 12 is removed by the vacuum suction of a nozzle 16. Also, the length of the covering 12 to be destructed is set at one half or less of the lead interval of the pad located on the pellet 21, adjoining to the covering 12, and a lead frame 20. As a result, the covering 12 is prevented from remaining on the bonding surface, the mixing of a foreign substance is prevented, the operation of a semiconductor circuit can be made stable, and the yield of production can also be improved.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、短時間の被覆剥離および異物混入防、。[Detailed description of the invention] [Industrial application field] The present invention enables short-time coating removal and prevention of foreign matter contamination.

止に有効な被覆線の超音波ボンディング方法に関。Regarding the ultrasonic bonding method for coated wires, which is effective for stopping.

するものである。It is something to do.

〔従来の技術〕[Conventional technology]

半導体集積回路製造における従来のボンデイン・グ手段
罠ついては、山崎幹也、山崎信人による精5密機穂学会
誌51/7/1985.9.67〜p・69に記載され
ているように、ボンディングワイ・ヤには′あらかじめ
伺ら処理を施すことなく、直接・ペレットオたはリード
フレーム上に圧着しためちt超音波による加振を行い、
ボンディングワイヤに10塑性流動を起させ、上記塑性
流動に伴う波動流動・′に″よって両金属界面の酸化被
覆を除去し、相互拡。
Regarding the trappings of conventional bonding methods in the manufacture of semiconductor integrated circuits, as described in Mikiya Yamazaki and Nobuto Yamazaki, Journal of the Precision Machinery Society, 51/7/1985.9.67-p.69, bonding wire・The material is directly crimped onto the pellet or lead frame without any pre-treatment, and is subjected to ultrasonic vibration.
10 Plastic flow is caused in the bonding wire, and the oxidized coating on the interface between both metals is removed by the wave flow caused by the plastic flow and mutual expansion occurs.

散により接合を行うものであり、被覆ワイヤに珀。The bond is made by dispersing the coated wire.

いて糸ンディングすること、およびボンディング。thread-nding and bonding.

ワイヤが互いに交差する場合については配慮され、。Consideration is given to cases where wires cross each other.

ていなかった。It wasn't.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

製品の信頼性向上と歩留り向上ケはかるために。 To improve product reliability and yield.

ボンディングワイヤとして被覆線を用いようとす。I am trying to use coated wire as a bonding wire.

る場合、従来技術では被覆線の被覆剥離について、。In this case, the conventional technology deals with stripping the coated wire.

伺ら配慮されていなかった。被覆線の剥離を行わ゛ない
で従来通り超音波によるボンディングを実施。
No consideration was given to this matter. Ultrasonic bonding is performed as usual without stripping the coated wire.

すれば、被覆がボンディング面に混入して接着子。This will cause the coating to get mixed into the bonding surface and the adhesive.

艮の原因となり、また、飛散した導電性の被覆が。Also, the conductive coating was scattered.

ペレット上に付着して動作不良の原因になる。さ5らに
被覆を剥離したワイヤ部分同志が接触した場。
It may adhere to the pellet and cause malfunction. 5. In the case where the wire parts whose coatings have been peeled off come into contact with each other.

合には、半導体集積回路が誤動作1゛るという問題・か
あった。
In some cases, there was a problem that the semiconductor integrated circuit malfunctioned.

〔問題点を解決するための手段」 ボンディングに際し、ボンディング位置から離10れた
位置において、被覆ワイヤにレーザ光線を照・射して被
覆を破壊したのぢボンデインク゛を行う。・上記破壊し
た被覆は真空吸引することによって、。
[Means for Solving the Problems] During bonding, the coated wire is irradiated with a laser beam to destroy the coating at a position 10 minutes away from the bonding position to perform bonding.・The destroyed coating is vacuum-suctioned.

ペレット上に上記破壊被覆が落下することを防止。Prevents the destruction coating from falling onto the pellets.

した。なお、上記レーザ光線の照射部分なボンデ、。did. Note that the bonder is the part irradiated with the laser beam.

インタに必要な最小限度の長さだりに限定するこ。Limit the length to the minimum required for the interface.

とによって、他の結線における被罹剥lI1.部分と干
and damage to the other connections due to lI1. Part and dry.

渉するのを防ぐようItc シたものである。It is designed to prevent interference.

〔作用〕[Effect]

レーザ発生器から発生したパルス状のレーザ鶏。 Pulsed laser chicken generated from a laser generator.

線をスリット状の平行光線にしてボンディングラ。Bonding the lines into slit-like parallel beams.

エツジの先端に導き、被覆線に集光照射すること。Guide the light to the tip of the edge and irradiate the covered wire with focused light.

によって、上記被覆線の被覆を破壊することかで。By destroying the covering of the above-mentioned covered wire.

きるが、破壊した被覆はボンディングウェッジの。However, the damaged coating was on the bonding wedge.

近傍に設けた真空吸引ノズルにより真空ポンプで5吸引
し、装置外に排出する。したがって上記被覆・線のホン
ティング位置は被覆が除去され、しかも。
A vacuum suction nozzle installed nearby is used to perform 5 suctions using a vacuum pump, and the sample is discharged to the outside of the apparatus. Therefore, the sheathing is removed at the honting position of the sheathing/wire.

ペレットやリードフレームに異物か何着して不良゛が発
生するのを防止1きる。なお、被覆線の剥離・長さをホ
ンティングに必要な最小限度の長さだけ10に限定する
には、レーザ光線の照射範囲を絞りこ・むことによって
行う。
It is possible to prevent defects from occurring due to foreign objects adhering to pellets or lead frames. In order to limit the peeling length of the coated wire to 10, which is the minimum length required for honing, this is done by narrowing down the irradiation range of the laser beam.

〔実施例〕〔Example〕

つぎに本発明の実施但を図面とともに説明するっ第1図
は本発明による被覆線の超音波ポンディ、。
Next, the implementation of the present invention will be explained with reference to the drawings. Fig. 1 shows an ultrasonic pump of a coated wire according to the present invention.

ング方法を説明するための斜視図、第2図は上記。Figure 2 is a perspective view for explaining the method.

第1図におけるボンディングウェッジおよびリ−。The bonding wedge and lee in FIG.

ドフレーム部分の拡大断面図、第3図は被覆ワイ。An enlarged cross-sectional view of the frame part, Figure 3 shows the covered wire.

ヤにレーザ光線を照射した状態を示す図、第4図。FIG. 4 is a diagram showing a state in which the laser beam is irradiated onto the layer.

は交差ボンディングの一例を示す図である。  9・ 
3 ・ 第1図において、エキシマレーザ発生器1はコ。
FIG. 2 is a diagram showing an example of cross bonding. 9・
3. In Figure 1, the excimer laser generator 1 is shown below.

ントローラ(図示せず)Kよって適当なタイミン。controller (not shown) at an appropriate timing.

グでレーザパルスを発生し、上記レーザ発生器1・に取
付けられたガイド筒2の内部をスリット状の・レーザ光
線3が平面鏡4により反射して通過し、5ガイド筒2の
先端に設けた集光レンズ5から集光・された平行光線と
して出射し、被覆したポンディ・ングワイヤを挾んで反
対側に位置する凹面鏡6で・反射される。上記凹面鏡6
はガイド筒2の先端K・金具7により固定されている。
A slit-shaped laser beam 3 is reflected by a plane mirror 4 and passes through the inside of the guide tube 2 attached to the laser generator 1. The light is emitted from the condenser lens 5 as a condensed parallel light beam, and is reflected by the concave mirror 6 located on the opposite side of the covered bonding wire. The above concave mirror 6
is fixed by the tip K of the guide tube 2 and the metal fitting 7.

8はボンディング10ウエツジで超音波発振器9および
ホーン10によっ。
8 is a bonding 10 wedge by an ultrasonic oscillator 9 and a horn 10.

て加振されたワイヤ11をボンディングする。上記。The vibrated wire 11 is then bonded. the above.

ボンディングウェッジ8はx、y、z軸移動機構。The bonding wedge 8 has an x, y, and z axis movement mechanism.

(図示せず)で位置制御され、第2図に示すよう。(not shown), as shown in FIG.

に被覆ワイヤが通過する貫通yc19を有している。1
5クランパ15はボンディングウェッジ8の後方に位。
It has a through hole yc19 through which the covered wire passes. 1
5 Clamper 15 is located behind bonding wedge 8.

置し、ワイヤ11を被覆12を介して保持し、駆動機。the wire 11 is held through the sheath 12, and the drive machine is mounted.

構(図示せず)によって上記ワイヤ11の把持、送。The wire 11 is held and fed by a mechanism (not shown).

す、開放を行う。なお、ワイヤ11を巻いたワイヤ。, open the door. In addition, the wire around which the wire 11 was wound.

リール23は駆動モータ24により回転する。ワイヤ・
 4 ・ 11のレーザ光線照射位置近傍に開口18を有する吸。
The reel 23 is rotated by a drive motor 24. Wire
4. A suction having an opening 18 near the laser beam irradiation position of 11.

引ノズル16は、上記ガイド筒2に金具17で固定さ。The pulling nozzle 16 is fixed to the guide tube 2 with a metal fitting 17.

れ、真空ポンプ(図示せず)K接続されて、上記。A vacuum pump (not shown) is connected as above.

レーザ光線照射位置近傍の空気を吸引する。20は゛リ
ードフレームであり、その上面にはペレット215がボ
ンディングされている。上記リードフレーム。
Suction the air near the laser beam irradiation position. 20 is a lead frame, and a pellet 215 is bonded to the upper surface of the lead frame. Lead frame above.

20は、モータ機構およびコントローラ(図示せず)に
よって適当な角度に旋回できるように真空吸着。
20 is vacuum suctioned so that it can be rotated to an appropriate angle by a motor mechanism and controller (not shown).

パット22に吸着固定されている。It is fixed to the pad 22 by suction.

上記構成において、クランパ15が第2図の矢印10人
のように、ワイヤ11を把持した状態で移動する・と1
貫通穴19を通リボンディングウェッジ8の先・端に被
覆ワイヤをボンディングに必要な長さだけ。
In the above configuration, the clamper 15 moves while gripping the wire 11 as shown by the arrow 10 in FIG.
Pass the coated wire through the through hole 19 to the tip and end of the ribboning wedge 8 to the length necessary for bonding.

送り出す。つぎにレーザ発生器1を動作させ、発。send out. Next, operate the laser generator 1 and emit light.

生したレーザ光線3を平面鏡4およびレンズ5を、5介
してボンディングウェッジ8の先端近傍に導き。
The generated laser beam 3 is guided to the vicinity of the tip of the bonding wedge 8 via a plane mirror 4 and a lens 5.

被覆ワイヤに集光照射1する。まず、照射された側。The covered wire is irradiated with focused light. First, the irradiated side.

の被覆12が破壊されて飛散し、被覆ワイヤを通過。The coating 12 is broken and scattered, passing through the coating wire.

したレーザ光線が第3図に示すように凹面鏡6に。The laser beam is directed to a concave mirror 6 as shown in FIG.

反射されて、上記被覆ワイヤの反対側の被覆12を。Reflected onto the coating 12 on the opposite side of the coated wire.

破壊し、被覆12を飛散させる。飛散した被覆は吸。It is destroyed and the coating 12 is scattered. Vacuum up any scattered coating.

引ノズル16の開口18に吸引され、装置の外に排出。It is sucked into the opening 18 of the pulling nozzle 16 and discharged outside the device.

される。この際、照射レーザ光線の照射範囲を絞・り込
むことによって、ボンディングに必要な最小・限の長さ
の被覆を剥離することができる。つぎに5x、y、z軸
移動機構(図示せず)によりペレッ・ト21の所定の位
置にボンディングウェッジ8を移・動させ、被覆を剥離
したワイヤ11が上記ペレット・21に接触すると同時
に超音波発振器9を動作し、・ホーン10を介してボン
ディングウェッジ8を振動lOさせ、上記ワイヤ11を
ボンディングする。つぎに。
be done. At this time, by narrowing down the irradiation range of the irradiated laser beam, it is possible to peel off the minimum length of the coating necessary for bonding. Next, the bonding wedge 8 is moved to a predetermined position on the pellet 21 using a 5x, y, and z-axis moving mechanism (not shown), and the wire 11 with the coating stripped comes into contact with the pellet 21 and at the same time The sonic oscillator 9 is operated to vibrate the bonding wedge 8 via the horn 10 to bond the wire 11. next.

x、y、z軸移動機構によりボンディングウエツ。Bonding is performed using the x, y, and z axis movement mechanism.

ジ8を上昇させながら、駆動モータ24によりワイ。While raising the gear 8, the drive motor 24 is used.

ヤリール23を回動し、被覆ワイヤを所定の長さ送。Rotate the reel 23 to feed the coated wire a predetermined length.

り出してクランパ15で上記被覆ワイヤを把持する。9
再びレーザ発生器1を動作させてボンデイングラ。
Then, the covered wire is held by the clamper 15. 9
Operate the laser generator 1 again to perform bonding.

エツジ8の先端のワイヤ11の被覆12を破壊し、ボ。Break the coating 12 of the wire 11 at the tip of the edge 8, and remove it.

ンディングウエッジ8をリードフレーム20の所定。Place the landing wedge 8 on the lead frame 20.

の位置まで移動させ、被覆を剥離したワイヤ11が。The wire 11 is moved to the position shown in FIG.

上記リードフレーム20に接触したのち、超音波へ。After contacting the lead frame 20, the ultrasonic wave is applied.

振器9を動作してボンディングを行う。クランパ。The vibrator 9 is operated to perform bonding. Clampa.

15がワイヤを把持した状態で第2図の矢印B方向。15 is holding the wire in the direction of arrow B in FIG.

に移動することによってワイヤ11を引き切り、1・本
のワイヤボンディングを完了する。つぎにモー・夕旋回
機構を動作させ、リードフレーム20を2本5目のワイ
ヤボンディングを行う位置に移動する。・上記の諸動作
を繰返すことによって1個の半導体・集積回路のボンデ
ィングを完了するが、上記した・ように、被覆ワイヤに
おける被覆12を必要最小限・度の長さに剥離すること
、すなわち、隣接するぺ1゜レット上のパット、および
リードフレーム上のり。
By moving to , the wire 11 is cut off and one wire bonding is completed. Next, the motor-turning mechanism is operated to move the lead frame 20 to the position where the second and fifth wire bonding is to be performed.・By repeating the above operations, bonding of one semiconductor/integrated circuit is completed, but as described in ・, the coating 12 on the coated wire is peeled off to the necessary minimum length, that is, The pad on the adjacent pellet and the lead frame.

−ド間隔の1/2以下の長さに被覆12を剥離する。- Peel off the coating 12 to a length of 1/2 or less of the distance between the dots.

ことによって、第4図に示すようにボンディング。By bonding as shown in FIG.

ワイヤを互いに交差させて結線しても、上記剥離。Even if the wires are connected by crossing each other, the above-mentioned peeling will occur.

部分が接触することがなく、半導体集積回路が誤、。The parts do not touch and the semiconductor integrated circuit is damaged.

動作するのを防止することができる。can be prevented from operating.

〔発明の効果〕〔Effect of the invention〕

上記のように本発明による被覆線の超音波ボン。 A coated wire ultrasonic bong according to the invention as described above.

ディング方法は、超音波発振器と、振動を伝達す。The ding method uses an ultrasonic oscillator and transmits vibrations.

るホーン、およびワイヤをボンディングするウニ、。horn, and a sea urchin for bonding wires.

・ 7 ・ ッジとを用いて、被覆線をボンディングする被覆。・ 7 ・ Covering for bonding coated wires using an edge.

線の超音波ボンディング方法において、上記ウニ。In the line ultrasonic bonding method, the above sea urchin.

ッジの貫通穴から突出した被覆線にレーザ光線な。The laser beam is applied to the coated wire protruding from the through hole of the edge.

照射して被覆を破壊するとともに、上記破壊した゛被覆
を真空吸引して除去することにより、ボンデ5イングに
際してはペレット2よびリードフレーム。
By irradiating the coating to destroy it, and removing the destroyed coating by vacuum suction, the pellet 2 and lead frame are removed during bonding.

部に被覆を除いた線材だけを加圧加振し、破壊し・た被
覆は直ちに除去されるため、短時間で被覆な゛取除き、
かつボンディング面に被覆が残ることが・なく、異物の
混入が防がれ、半導体集積回路の動10作不良を防止し
、歩留りを向上させることができ・る。
Only the wire with the sheath removed is subjected to pressure and vibration, and the damaged sheath is immediately removed, so it is possible to remove the sheath in a short time.
In addition, no coating remains on the bonding surface, preventing foreign matter from entering, preventing malfunctions of semiconductor integrated circuits, and improving yield.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明による被覆線の超音波ポンディ。 ング方法を説明するための斜視図、第2図は上記、5M
1図におけるボンディングウェッジおよびり−。 ドフレーム部分の拡大断面図、第3図は被覆ワイ。 ヤにレーザ光線を照射した状態を示す図、第4図。 は交差ボンディングの一例を示す図である。 1・・・レーザ発生器 ゛ 8 。 8・・・ボンディングウェッジ 9・・・超音波発振器  10・・・ホーン11・・・
ワイヤ     16・・・吸引ノズル   。 19・・・貫通穴     20・・・リードフレーム
  。
FIG. 1 shows an ultrasonic pump of a coated wire according to the present invention. A perspective view for explaining the method of
The bonding wedge and the bridge in Figure 1. An enlarged cross-sectional view of the frame part, Figure 3 shows the covered wire. FIG. 4 is a diagram showing a state in which the laser beam is irradiated onto the layer. FIG. 2 is a diagram showing an example of cross bonding. 1...Laser generator゛8. 8... Bonding wedge 9... Ultrasonic oscillator 10... Horn 11...
Wire 16...Suction nozzle. 19...Through hole 20...Lead frame.

Claims (1)

【特許請求の範囲】 1、超音波発振器と、振動を伝達するホーン、およびワ
イヤをボンディングするウェッジとを用いて、被覆線を
ボンディングする被覆線の超音波ボンディング方法にお
いて、上記ウェッジの貫通穴から突出した被覆線にレー
ザ光線を照射して被覆を破壊するとともに、上記破壊し
た被覆を真空吸引して除去することを特徴とする被覆線
の超音波ボンディング方法。 2、上記被覆の破壊は、破壊する被覆の長さが、隣接す
るペレット上のパット、およびリードフレーム上のリー
ド間隔の1/2以下の長さであることを特徴とする特許
請求の範囲第1項に記載した被覆線の超音波ボンディン
グ方法。
[Claims] 1. In an ultrasonic bonding method for a coated wire, in which a coated wire is bonded using an ultrasonic oscillator, a horn for transmitting vibration, and a wedge for bonding the wire, from the through hole of the wedge. A method for ultrasonic bonding of coated wires, characterized in that the protruding coated wire is irradiated with a laser beam to destroy the coating, and the destroyed coating is removed by vacuum suction. 2. The destruction of the coating is characterized in that the length of the coating to be destroyed is 1/2 or less of the gap between the pads on the adjacent pellets and the leads on the lead frame. The method for ultrasonic bonding of coated wires described in Section 1.
JP61087958A 1986-04-18 1986-04-18 Ultrasonic bonding method for covered wire Pending JPS62245643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61087958A JPS62245643A (en) 1986-04-18 1986-04-18 Ultrasonic bonding method for covered wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61087958A JPS62245643A (en) 1986-04-18 1986-04-18 Ultrasonic bonding method for covered wire

Publications (1)

Publication Number Publication Date
JPS62245643A true JPS62245643A (en) 1987-10-26

Family

ID=13929375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61087958A Pending JPS62245643A (en) 1986-04-18 1986-04-18 Ultrasonic bonding method for covered wire

Country Status (1)

Country Link
JP (1) JPS62245643A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10129006A1 (en) * 2001-06-15 2003-01-02 Conti Temic Microelectronic Electronic module e.g. for motor vehicle controls, has part of bonding links formed by bonding wire provided with insulating layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10129006A1 (en) * 2001-06-15 2003-01-02 Conti Temic Microelectronic Electronic module e.g. for motor vehicle controls, has part of bonding links formed by bonding wire provided with insulating layer
DE10129006B4 (en) * 2001-06-15 2009-07-30 Conti Temic Microelectronic Gmbh Electronic module

Similar Documents

Publication Publication Date Title
US5977512A (en) Multi-wavelength laser soldering device with substrate cleaning beam
US7662666B2 (en) Method of processing wafer
JP4338834B2 (en) Semiconductor chip mounting method using ultrasonic vibration
JP2016001677A (en) Wafer processing method
KR20090123777A (en) Wafer dividing method
JP2008294191A (en) Wafer dividing method
US11654513B2 (en) Workpiece-separating device and workpiece-separating method
JP2009200140A (en) Method of manufacturing semiconductor chip
US6892927B2 (en) Method and apparatus for bonding a wire to a bond pad on a device
JP4833657B2 (en) Wafer division method
KR20090124928A (en) Wafer dividing method
JPS62245643A (en) Ultrasonic bonding method for covered wire
JPS62122132A (en) Washer using ultrasonic wave
TWI797360B (en) Wafer Separation Method
JP4176292B2 (en) Single point bonding equipment
JPS61101043A (en) Wire bonding device
JPH1079399A (en) Wirebonding method and device
JP3288464B2 (en) Ultrasonic cleaning method for development residue
JP2009141211A (en) Bonding device and bonding method
JPS5919463B2 (en) wire bonding method
JPH02106092A (en) Method of joining conductor
JP3505827B2 (en) Dicing method
JPH05111780A (en) Method and apparatus for cutting conductive pattern of printed board
US20210125870A1 (en) Wafer processing method
JP2861960B2 (en) Dicing method