JPS62243761A - Target for sputtering - Google Patents
Target for sputteringInfo
- Publication number
- JPS62243761A JPS62243761A JP8745486A JP8745486A JPS62243761A JP S62243761 A JPS62243761 A JP S62243761A JP 8745486 A JP8745486 A JP 8745486A JP 8745486 A JP8745486 A JP 8745486A JP S62243761 A JPS62243761 A JP S62243761A
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- film
- metal
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 10
- 239000000956 alloy Substances 0.000 claims abstract description 10
- 230000000737 periodic effect Effects 0.000 claims abstract description 4
- 238000005477 sputtering target Methods 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052799 carbon Inorganic materials 0.000 abstract description 3
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 19
- 239000000203 mixture Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- 238000005245 sintering Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910019974 CrSi Inorganic materials 0.000 description 1
- -1 Mo5iz Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910008814 WSi2 Inorganic materials 0.000 description 1
- 229910008938 W—Si Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、例えばＷｓ Ｍｏ ｓ Ｃｒ等の高融点金
属あるいはそのシリサイド等から成る薄膜をスパッタリ
ングによって作製するのに用いられるスパッタリング用
ターゲットに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a sputtering target used for producing a thin film made of a high melting point metal such as WsMosCr or its silicide by sputtering.
例えば超ＬＳＩの電極配線膜等として使用される例えば
Ｗｓ Ｍｏ ＳＣｒ等の高融点金属あるいはそのシリサ
イド（例えばＷＳｉ２、Ｍｏ５ｉｚ、ＣｒＳｉ。For example, high melting point metals such as Ws Mo SCr or their silicides (eg WSi2, Mo5iz, CrSi) are used as electrode wiring films of VLSIs.
等）の製膜に用いられるスパッタリング用ターゲットに
は、従来、Ｗ％Ｍｏ ｓ Ｃｒ ％ Ｓ ｉ等の微粉末
を必要組成に配合し、それを成形および焼結したターゲ
ットが使用されていた。Conventionally, a sputtering target used for forming a film of (e.g.) has been a target prepared by blending fine powder such as W%MosCr%Si to the required composition, molding and sintering it.
しかしながら上記のような従来のターゲットには次のよ
うな問題があった。However, the conventional targets as described above have the following problems.
■ 当該ターゲットを用いて得られるスパッタ膜の特性
の均一性に劣る。(2) The sputtered film obtained using the target has poor uniformity of properties.
これは、（ｉ）微粉末は比表面積が非常に大きい（例え
ば１００ｍ”／ｇｒ程度）ため、大気中の水分、有機物
等の不純物を吸着し易く、更に酸化するため、高純度の
ターゲットが得にくいこと、（ｉｉ）微粉末を必要組成
に配合した場合、局部的な組成のゆらぎが不可避的に生
じるため、全体に亘り組成の均一なターゲットが得にく
いこと、等に起因する。This is because (i) fine powder has a very large specific surface area (for example, about 100 m"/gr), so it easily adsorbs impurities such as moisture and organic matter in the atmosphere, and further oxidizes, resulting in a highly pure target. (ii) When fine powders are blended into the required composition, local fluctuations in the composition inevitably occur, making it difficult to obtain a target with a uniform composition over the entire area.
■ 当該ターゲットを用いて得られるスパッタ膜の膜厚
の均一性に劣る。(2) The uniformity of the sputtered film obtained using the target is poor.
これは、焼結体であるため当該ターゲットには数％〜数
十％程度の気孔が残存しており、これによってスパッタ
リングの均一性が損なわれるからである。This is because, since the target is a sintered body, several percent to several tens of percent of pores remain in the target, which impairs the uniformity of sputtering.
■ 当該ターゲットは経済性があまり良くない。■ The economic efficiency of the target is not very good.
これは、（ｉ） ｍ粉末（例えば１μｍ以下）を原料と
しているため原料が高価であること、（ｉｉ）焼結雰囲
気（例えばＨ２ガス雰囲気）の高純度化が必要であり、
しかも焼結には１５００℃程度の高温を必要とするため
、製造プロセスに手間がかかること、等に起因する。This is because (i) the raw material is expensive since m powder (for example, 1 μm or less) is used as the raw material; (ii) the sintering atmosphere (for example, H2 gas atmosphere) needs to be highly purified;
Moreover, since sintering requires a high temperature of about 1500° C., the manufacturing process is labor-intensive.
そこでこの発明は、上記のような問題点を解決したスパ
ッタリング用ターゲットを提供することを目的とする。Therefore, an object of the present invention is to provide a sputtering target that solves the above problems.
〔問題点を解決するための手段〕
この発明のスパッタリング用ターゲットは、高融点金属
およびその合金の少なくとも一方から成り、化学気相成
長法によって作製されていることを特徴とする。[Means for Solving the Problems] The sputtering target of the present invention is characterized in that it is made of at least one of a high melting point metal and an alloy thereof, and is produced by chemical vapor deposition.
第１図は、この発明の一実施例に係るスパッタリング用
ターゲットを示す部分断面図である。この実施例のスパ
ッタリング用ターゲットは、金属あるいはカーボン等か
ら成るバッキングプレート（基板）１上に、高融点金属
およびその合金の少なくとも一方から成る、即ち高融点
金属、その合金または両者の混合物（以下、これらを単
に高融点金属等と呼ぶ場合がある）から成る厚膜２を化
学気相成長法（ＣＶＤ法）によって成長させたものであ
る。FIG. 1 is a partial sectional view showing a sputtering target according to an embodiment of the present invention. The sputtering target of this embodiment consists of a backing plate (substrate) 1 made of metal, carbon, etc., and made of at least one of a high melting point metal and an alloy thereof. A thick film 2 made of a metal (sometimes referred to simply as a high melting point metal or the like) is grown by chemical vapor deposition (CVD).
もっとも、この発明に係るスパッタリング用ターゲット
の他の例としては、バッキングプレートｌ上に上記のよ
うな高融点金属等をブロック状（塊状）等に成長させた
もの、あるいは高融点金属等を厚膜状、ブロック状等に
成長させた後にバッキングプレート１を後処理（例えば
切削、化学処理等）で除去したもの等がある。However, other examples of the sputtering target according to the present invention include those in which the above-mentioned high melting point metal is grown in a block shape (lump) on the backing plate l, or in which the high melting point metal is grown in a thick film. There is one in which the backing plate 1 is removed by post-processing (for example, cutting, chemical treatment, etc.) after growing into a shape, a block shape, or the like.
上記高融点金属としては、例えばＷｓ Ｍｏ ｓ Ｃｒ
等のような、元素周期表のＩＶａ族、Ｖａ族あるいはＶ
ｉａ族に属する元素が採り得る。Examples of the high melting point metal include WsMosCr
Group IVa, Va or V of the periodic table of elements, such as
Elements belonging to group IA can be obtained.
上記合金としては、例えばＷ−３ｉ系合金（例えばＷＳ
ｉ２等）、Ｍｏ−３ｉ系合金（例えばＭｏ５ｉ＝等）、
Ｃｒ−３ｉ系合金（例えばＣｒ５ｉｚ等）のような、元
素周期表の■ａ族、Ｖａ族、Ｖｉａ族に属する元素のシ
リサイドが採り得る。Examples of the above-mentioned alloys include W-3i alloys (for example, WS
i2 etc.), Mo-3i alloy (e.g. Mo5i= etc.),
A silicide of an element belonging to group ①a, group Va, or group Via of the periodic table of elements, such as a Cr-3i alloy (for example, Cr5iz, etc.), can be used.
化学気相成長法としては、常圧のＣＶＤ法、減圧ＣＶＤ
法、プラズマＣＶＤ法、光ＣＶＤ法等が採り得る。Chemical vapor deposition methods include normal pressure CVD and low pressure CVD.
method, plasma CVD method, photo CVD method, etc. can be used.
化学気相成長の反応ガスとしては、例えば、Ｗ−３ｉ系
膜を成長させる場合はＳｉＨ４＋ＷＦ６の混合ガス、Ｍ
ｏ−５ｉ系膜を成長させる場合はＳｉｇｎ ＋ＭｏＣｌ
５あるいはＳｉＨ，＋ＭｏＦ、、の混合ガス、Ｃｒ−３
ｔ系膜を成長させる場合はＳ ｉ Ｈａ＋ＣｒＣ１４の
混合ガス等が採り得る。For example, when growing a W-3i film, a mixed gas of SiH4+WF6, M
When growing an o-5i film, use Sign +MoCl
5 or SiH, +MoF, mixed gas, Cr-3
When growing a t-based film, a mixed gas of S i Ha+CrC14 or the like can be used.
上記のようなスパッタリング用ターゲットには次のよう
な特徴がある。The above-mentioned sputtering target has the following characteristics.
■ 当該ターゲットによれば特性の均一なスパッタ膜が
得られる。(2) With this target, a sputtered film with uniform characteristics can be obtained.
これは、（ｉ）当該ターゲットは化学気相成長法で作製
されているため高純度であること、（ｉｉ）化学気相成
長法の温度条件を変化させることによりターゲットの成
長結晶粒の大きさを任意に制御することができること、
（ｉｉｉ）組成が局部的にも均一であること、等による
。This is because (i) the target has high purity because it is produced by chemical vapor deposition, and (ii) the size of the growing crystal grains of the target can be reduced by changing the temperature conditions of chemical vapor deposition. be able to arbitrarily control
(iii) The composition is locally uniform, etc.
■ 当該ターゲットによれば膜厚の均一なスパッタ膜が
得られる。(2) With this target, a sputtered film with uniform thickness can be obtained.
これは、当該ターゲットは気孔を全く含まないため、ス
パッタ時の放電条件が一定となる等、スパッタリングの
均一性が良くなることによる。This is because the target does not contain any pores, so the discharge conditions during sputtering become constant, and the sputtering becomes more uniform.
■ 当該ターゲットによれば多様なスパッタ膜を得るこ
とができる。(2) A variety of sputtered films can be obtained using this target.
これは、反応ガス組成等の化学気相条件を変えることに
より、ターゲット組成を自由に制御することができるか
らである。This is because the target composition can be freely controlled by changing the chemical vapor phase conditions such as the reaction gas composition.
■ 当該ターゲットは経済性に優れている。■ The target has excellent economic efficiency.
これは、（ｉ）従来のように高価な微粉末を使用してい
ないこと、（ｉｉ）製造プロセスが簡単であること、（
ｉ ｉ ｉ）更に、従来のように全体をターゲットとし
て所定組成にする必要は必ずしもなく、例えば安価で加
工性の良いバッキングプレートｌの表面にだけ所望組成
の厚膜２またはブロックを形成したものでも良いこと、
等による。This is because (i) expensive fine powder is not used as in the past, (ii) the manufacturing process is simple, and (
i i i) Furthermore, it is not necessarily necessary to target the entire plate to a predetermined composition as in the past; for example, it is also possible to form a thick film 2 or a block of a desired composition only on the surface of the backing plate l, which is inexpensive and easy to process. Good thing,
According to etc.
Ｗ−３ｉ ムターゲットのイ
減圧ＣＶＤ法により、下記条件にて一週間Ｗ−３ｉ系膜
を基板（バッキングプレート）上に成長させた結果、１
００ｍａ＋φＸ２．ＯｍｍシのＷ −Ｓ ｉ系膜（組成
比Ｗ／Ｓｉ ＝１／２．４）が得られた。As a result of growing a W-3i film on a substrate (backing plate) for one week under the following conditions using the low pressure CVD method using a W-3i film target, 1
00ma+φX2. A W-Si based film (composition ratio W/Si = 1/2.4) with a thickness of 0 mm was obtained.
これをスパッタリングに使用した結果、ＬＳＩゲート電
極として使用できる高純度で安定した特性を持つスパッ
タ膜が得られた。As a result of using this for sputtering, a sputtered film with high purity and stable characteristics that can be used as an LSI gate electrode was obtained.
藍圧旦叉旦条件
バッキングプレート：カーボン（１００ｍａ＋φＸ’ｌ
、 Ｑ ａｓ ｔ ）
反応ガス・・Ｓ ｉ Ｈａ ＋ Ｗ Ｆ ｈの混合ガス
成長温度・・８００℃
圧力 ・・０．１ＴＯｒｒ
〔発明の効果〕
以上のように、この発明に係るスパッタリング用ターゲ
ットは経済性に優れていると共に、当該ターゲットによ
れば、特性や膜厚等の均一なスパッタ膜が得られる。Backing plate: Carbon (100ma+φX'l
, Qast) Reactant gas: Mixed gas of S i Ha + W F h Growth temperature: 800°C Pressure: 0.1 TOrr [Effects of the Invention] As described above, the sputtering target according to the present invention is economical. In addition to having excellent properties, the target allows a sputtered film with uniform properties, film thickness, etc. to be obtained.
第１図は、この発明の一実施例に係るスパッタリング用
ターゲットを示す部分断面図である。FIG. 1 is a partial sectional view showing a sputtering target according to an embodiment of the present invention.
Claims (3)
成り、化学気相成長法によって作製されていることを特
徴とするスパッタリング用ターゲット。(1) A sputtering target made of at least one of a high melting point metal and an alloy thereof, and manufactured by chemical vapor deposition.
属する元素であり、前記合金がそのシリサイドである特
許請求の範囲第１項記載のスパッタリング用ターゲット
。(2) The sputtering target according to claim 1, wherein the high melting point metal is an element belonging to Groups IVa to VIa of the Periodic Table of Elements, and the alloy is a silicide thereof.
項または第２項記載のスパッタリング用ターゲット。(3) Claim 1 having a backing plate
The sputtering target according to item 1 or 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8745486A JPS62243761A (en) | 1986-04-16 | 1986-04-16 | Target for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8745486A JPS62243761A (en) | 1986-04-16 | 1986-04-16 | Target for sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62243761A true JPS62243761A (en) | 1987-10-24 |
Family
ID=13915304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8745486A Pending JPS62243761A (en) | 1986-04-16 | 1986-04-16 | Target for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62243761A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06228746A (en) * | 1993-02-05 | 1994-08-16 | Tokyo Tungsten Co Ltd | High melting point metallic sputtering target |
| JP2007080999A (en) * | 2005-09-13 | 2007-03-29 | Nissin Electric Co Ltd | Method and device for forming silicon dot |
| JP2007088317A (en) * | 2005-09-26 | 2007-04-05 | Nissin Electric Co Ltd | Method and apparatus for forming silicon body |
| JP2007088311A (en) * | 2005-09-26 | 2007-04-05 | Nissin Electric Co Ltd | Method and device for forming silicone dot |
| US7988835B2 (en) | 2004-03-26 | 2011-08-02 | Nissin Electric Co., Ltd. | Silicon dot forming method and silicon dot forming apparatus |
| JP2012522133A (en) * | 2009-03-31 | 2012-09-20 | フラウンホッファー−ゲゼルシャフト・ツァー・フォデラング・デル・アンゲワンテン・フォーシュング・エー．ファウ． | Magnetron coating module and magnetron coating method |
-
1986
- 1986-04-16 JP JP8745486A patent/JPS62243761A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06228746A (en) * | 1993-02-05 | 1994-08-16 | Tokyo Tungsten Co Ltd | High melting point metallic sputtering target |
| US7988835B2 (en) | 2004-03-26 | 2011-08-02 | Nissin Electric Co., Ltd. | Silicon dot forming method and silicon dot forming apparatus |
| JP2007080999A (en) * | 2005-09-13 | 2007-03-29 | Nissin Electric Co Ltd | Method and device for forming silicon dot |
| JP4497066B2 (en) * | 2005-09-13 | 2010-07-07 | 日新電機株式会社 | Method and apparatus for forming silicon dots |
| JP2007088317A (en) * | 2005-09-26 | 2007-04-05 | Nissin Electric Co Ltd | Method and apparatus for forming silicon body |
| JP2007088311A (en) * | 2005-09-26 | 2007-04-05 | Nissin Electric Co Ltd | Method and device for forming silicone dot |
| JP4497068B2 (en) * | 2005-09-26 | 2010-07-07 | 日新電機株式会社 | Silicon dot forming method and silicon dot forming apparatus |
| JP4529855B2 (en) * | 2005-09-26 | 2010-08-25 | 日新電機株式会社 | Silicon object forming method and apparatus |
| US7887677B2 (en) | 2005-09-26 | 2011-02-15 | Nissin Electric Co., Ltd. | Silicon object forming method and apparatus |
| JP2012522133A (en) * | 2009-03-31 | 2012-09-20 | フラウンホッファー−ゲゼルシャフト・ツァー・フォデラング・デル・アンゲワンテン・フォーシュング・エー．ファウ． | Magnetron coating module and magnetron coating method |
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