JPS62218562A - Sputtering device - Google Patents
Sputtering deviceInfo
- Publication number
- JPS62218562A JPS62218562A JP6132986A JP6132986A JPS62218562A JP S62218562 A JPS62218562 A JP S62218562A JP 6132986 A JP6132986 A JP 6132986A JP 6132986 A JP6132986 A JP 6132986A JP S62218562 A JPS62218562 A JP S62218562A
- Authority
- JP
- Japan
- Prior art keywords
- target
- magnets
- magnet
- yoke
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 16
- 230000005294 ferromagnetic effect Effects 0.000 claims description 4
- 230000005291 magnetic effect Effects 0.000 abstract description 13
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 10
- 229920006395 saturated elastomer Polymers 0.000 abstract description 5
- 239000003302 ferromagnetic material Substances 0.000 abstract description 4
- 238000010276 construction Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 101150097381 Mtor gene Proteins 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000007799 cork Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Abstract
Description
【発明の詳細な説明】
〔概要〕
本発明は強磁性体ターゲットのスパッタリング装置にお
いてターゲットの消費効率の向上とターゲットの交換回
数の減少のためにターゲット支持体のマグネットを２重
構造にすることにより、ターゲットを厚くしてもマグネ
トロンスパッタが維持出来る様にしたものである。[Detailed Description of the Invention] [Summary] The present invention provides a sputtering device for a ferromagnetic target by making the magnet of the target support a double structure in order to improve target consumption efficiency and reduce the number of target replacements. , magnetron sputtering can be maintained even if the target is made thicker.
本発明は、スパッタリング装置の改良に係り。 The present invention relates to improvements in sputtering equipment.
特に強磁性体をターゲツト材として用いた際に。Especially when using ferromagnetic materials as target materials.
ターゲット厚を厚くしてもマグネトロンスパッタの維持
を可能にしたターゲット支持体の構造に関するものであ
る。This invention relates to a structure of a target support that enables magnetron sputtering to be maintained even when the target thickness is increased.
砲
スパッタリング装置はかって多の成膜技術２例えば蒸着
に比べて、成膜速度が遅いという欠点があったがマグネ
トロンスパッタ法の開発により成膜速度は数〜士数倍に
改善された。Gun sputtering equipment used to have the disadvantage of being slower in film formation than other film formation techniques such as vapor deposition, but with the development of magnetron sputtering, the film formation speed has been improved several times to several times.
その結果スパッタリング法は、薄膜形成技術の中でもさ
まざまな分野で利用され、＄１）１！の母材であるター
ゲットも金属２合金、酸化物と広い範囲にわたっている
。As a result, the sputtering method is used in various fields among thin film forming technologies, and $1) 1! The target, which is the base material of the metal alloy, has a wide range of materials such as metal 2 alloys and oxides.
従来のマグネトロンスパッタ装置の要部断面図を第３図
に示す。排気装置２が布設された真空容器１内にターゲ
ット３が支持され、かつヨークによって磁気的に結合さ
れた円環状磁石と中心円柱状磁石からなる磁石４が内蔵
されたターゲット支持体５とこれに対向して膜を形成す
る基板６を支薄膜を形成するには上記真空容器１内を例
えばＡｒ（アルゴン）ガスで数〜数＋ｍＴｏｒの圧力に
し基板支持体７とターゲット支持体５の間に電源１０に
より高電圧を印加し放電させる。この時発生したスパッ
タガスイオンは前記マグネット４によりターゲット３表
面に発生ずる円弧状磁界１２により収束され、密度の高
いプラズマ状態となる。FIG. 3 shows a cross-sectional view of the main parts of a conventional magnetron sputtering apparatus. A target 3 is supported in a vacuum vessel 1 in which an exhaust device 2 is installed, and a target support 5 has a built-in magnet 4 consisting of an annular magnet and a central cylindrical magnet magnetically coupled by a yoke. To form a thin film by supporting the substrates 6 facing each other on which a film is to be formed, the inside of the vacuum chamber 1 is heated to a pressure of several to several + mTor with Ar (argon) gas, for example, and a power supply is applied between the substrate support 7 and the target support 5. 10, a high voltage is applied and discharged. The sputtering gas ions generated at this time are converged by the arcuate magnetic field 12 generated on the surface of the target 3 by the magnet 4, resulting in a high-density plasma state.
この様にターデフ１〜表面に密度の高いスパッタガスイ
オンが衝突し、ターゲット物質がスパッタされ基板表面
に大きな成膜速度で薄膜を形成している。In this manner, high-density sputtering gas ions collide with the surface of TARDEF 1, and the target material is sputtered to form a thin film on the substrate surface at a high deposition rate.
ところでターゲットとして強磁性体を用いた場合、ター
ゲットがヨークの役割をしてしまいターゲット表面に密
度の高いプラズマを形成する円弧状磁界が発生しなくな
る。即ち、マグネトロンスパッタが出来なくなり、高い
成膜速度が得られない。By the way, when a ferromagnetic material is used as the target, the target acts as a yoke, and an arcuate magnetic field that forms high-density plasma on the target surface is no longer generated. That is, magnetron sputtering cannot be performed and a high film formation rate cannot be obtained.
強磁性体ターゲソ１の場合でもマグネトロンスパッタを
行なためには、（１）磁石をより強力なものにする。（
２）ターゲットの厚さを薄くすることで対処できる。し
かし、（１）の方法では、ターゲットと磁石間に強力な
吸引力が働きターゲットの交換が困難となり、また磁石
にも限界があり、ある厚さまでしかターゲット厚を厚く
することが出来ない。In order to perform magnetron sputtering even in the case of the ferromagnetic target device 1, (1) the magnet should be made stronger; (
2) This can be solved by reducing the thickness of the target. However, in method (1), a strong attractive force is generated between the target and the magnet, making it difficult to replace the target, and the magnet also has a limit, and the target thickness can only be increased up to a certain thickness.
（２）の方法では、ターゲット交換頻度が増えて、装置
の稼働率が低下する。In method (2), the frequency of target replacement increases and the operating rate of the device decreases.
以上の様な欠点が強磁性体ターゲットの場合に発生する
。The above-mentioned drawbacks occur in the case of a ferromagnetic target.
また、マグネトロンスパッタでは、第４図に示す様に、
ターゲット中心部と外周部はスパッタされずに残ってし
まい、ターゲットの利用効率が悪いという欠点もあった
。In addition, in magnetron sputtering, as shown in Figure 4,
Another drawback was that the target center and outer periphery remained unsputtered, resulting in poor target utilization efficiency.
第１図は本発明のスパッタリング装置のターゲット支持
体構造図である。図中２１はターゲット。FIG. 1 is a structural diagram of a target support of a sputtering apparatus of the present invention. 21 in the figure is the target.
２２．２３は略円環状磁石である。22 and 23 are approximately annular magnets.
第１図に示す様に２本発明のスパッタリング装置では、
ターゲットをディスク状にし磁石を入れ子の様な２重構
造としたものである。As shown in FIG. 1, the sputtering apparatus of the present invention has two
The target is disk-shaped and the magnets have a nested double structure.
本発明の磁石２２は２強磁性体ターゲットを飽和させる
だけの強さが必要だが表面に円弧状磁界を発生させる必
要はない。この結果ターゲット交換は容易となり、ター
ゲット厚を厚くしても構わない。一方、磁石２３による
磁界は、ターゲットが飽和していないとターゲット内を
通るがターゲットが飽和しているためターゲット表面の
空間に円弧状磁界２４が発生し、マグネトロンスパッタ
が可能となる。またターゲットをディスク形状にしてい
るため、エロージョン（スパッタされる領域）がターゲ
ット形状と同様の形となり、クーデソトのほとんど全面
がスパッタされ、ターゲットの利用効率が上がり、また
膜厚分布も良くなる。The magnet 22 of the present invention needs to have enough strength to saturate the biferromagnetic target, but it is not necessary to generate an arcuate magnetic field on the surface. As a result, the target can be replaced easily, and the target thickness can be increased. On the other hand, if the target is not saturated, the magnetic field generated by the magnet 23 passes through the target, but since the target is saturated, an arcuate magnetic field 24 is generated in the space on the target surface, making magnetron sputtering possible. Furthermore, since the target is disk-shaped, the erosion (the area to be sputtered) has the same shape as the target, and almost the entire surface of the Kudesoto is sputtered, increasing the target utilization efficiency and improving the film thickness distribution.
第２図は１本発明の実施例によるスパッタリング装置の
断面図である。排気装置３２を有する真空容器３１内に
、ディスク状ターゲットとターゲットを飽和させるため
にヨークにより磁気的に結合された一組の円環状磁石３
４と円弧状磁界を発生させるために、ヨークにより磁気
的に結合されたもう一組の円環状磁石３５とから構成さ
れたりる。３９はシャッターであり、４２はアースシー
ルドである。FIG. 2 is a sectional view of a sputtering apparatus according to an embodiment of the present invention. A disk-shaped target and a set of annular magnets 3 magnetically coupled by a yoke to saturate the target are placed in a vacuum vessel 31 having an evacuation device 32.
4 and another set of annular magnets 35 magnetically coupled by a yoke to generate an arcuate magnetic field. 39 is a shutter, and 42 is an earth shield.
薄膜を形成する際には真空容器１内にスパッタ雰囲気ガ
スを導入し、基板支持体３日とターゲット支持体３６の
間に高電圧を電源４０により印加し放電させる。プラズ
マは磁石３５により発生した円弧状磁界４１により密度
が高くなり、高成膜速度で薄膜を形成出来る。When forming a thin film, a sputtering atmosphere gas is introduced into the vacuum chamber 1, and a high voltage is applied between the substrate support 3 and the target support 36 by the power source 40 to cause discharge. The density of the plasma is increased by the arcuate magnetic field 41 generated by the magnet 35, and a thin film can be formed at a high deposition rate.
従来Ｆｅ（フェライト）ターゲットでマグネトロンスパ
ックを行っていた磁石（ＳｍＣｏ磁石）を用いた場合タ
ーゲット板厚は最大５ｍｍで３ ａｍスパックされた状
態で交換していたが１本発明では。Conventionally, when a magnet (SmCo magnet) was used for magnetron spucking with an Fe (ferrite) target, the target plate thickness was at most 5 mm and the target was replaced after being spucked for 3 am, but in the present invention.
板厚を例えば２倍の１０作にすると、８１ｍスパッタし
た段階で交換すれば良く、ターゲットの使用期間は２．
７倍となる。For example, if the thickness of the plate is doubled to 10, the target can be replaced after 81 m of sputtering, and the target usage period is 2.
It will be 7 times more.
ターゲットの厚さは、２組の磁石３４．３５の磁石の強
さとの関係で決定する。即ち、ターゲット厚が厚すぎて
磁石３４で飽和出来ない場合磁石３５の一部の磁界をタ
ーゲットの飽和に使用すれば良い。The thickness of the target is determined in relation to the strength of the two sets of magnets 34 and 35. That is, if the target is too thick to be saturated by the magnet 34, part of the magnetic field of the magnet 35 may be used to saturate the target.
一方、ターゲットの大きさを基板の大きさに合せ、かつ
、クーゲット支持体中心と基板中心を一致させるとエロ
ージョンと基板の大きさがほとんど等しくなるため基板
を回転させることはなしに膜厚分布の良い膜を形成出来
、スパッタリング装置の機構が単純化する。On the other hand, if you match the size of the target to the size of the substrate and also match the center of the Kugett support with the center of the substrate, the erosion and substrate sizes will be almost equal, so you can achieve a good film thickness distribution without having to rotate the substrate. A film can be formed, and the mechanism of the sputtering device is simplified.
本実施例では、磁石として永久磁石を用いたが。In this example, a permanent magnet was used as the magnet.
電磁石を用いても良いことは言うまでもないことである
。電磁石を用いると、上述のターゲット厚が変った時に
すぐに磁界の大きさを調整出来る。It goes without saying that an electromagnet may also be used. By using an electromagnet, the magnitude of the magnetic field can be adjusted immediately when the target thickness described above changes.
また、磁石構造として円環状磁石を使用したが。In addition, an annular magnet was used as the magnet structure.
略円環状であれば良く、閉多角形の磁石を使用する事も
出来る。It only needs to be approximately annular, and closed polygonal magnets can also be used.
本発明によればターゲットをディスク形状にし。 According to the present invention, the target is formed into a disk shape.
磁石を２重構造にすることにより、ターゲットを飽和さ
せる磁石とプラズマ密度を上げる磁界を発生させる磁石
とに役割分担させることからターゲット厚を厚くしても
マグネトロンスパッタを維持することが可能となり、タ
ーゲットを長時間使用でき、さらにターゲットをエロー
ジョン領域と同じ形状のディスク形状としているため、
膜厚分布の良い膜を高成膜速度で形成できる。By making the magnet into a double structure, the roles are divided between the magnet that saturates the target and the magnet that generates the magnetic field that increases the plasma density, making it possible to maintain magnetron sputtering even when the target thickness is increased. can be used for a long time, and the target is a disk shape that is the same as the erosion area.
A film with good thickness distribution can be formed at a high deposition rate.
第１図は本発明のターゲット部分の断面構造図。
第２図は本発明の実施例の断面図、第３図は従来Ｑ−
例の断面図、第４図は従来例のターゲット部分の斜視図
である。
図において１，２４．．３１は真空容器、２．３２は排
気装置、３，２１，３３．５３はターゲット。
４．２２，２３，３４．３５は磁石、５．３６はターゲ
ット支持体、６．３７は基板、７．３８は基板支持体、
８は基板回転機構、９．３９はシャッタ、１０．４０は
高電圧電源、１２，４１．５２は円弧状磁界、４２はア
ースシールド、５１はエロージョン領域（スパッタされ
る領域）２５は磁石２２のヨーク、２６は磁石２３のコ
ーク４３は磁石３４のヨーク、４４は磁石３５のヨーク
である。FIG. 1 is a cross-sectional structural diagram of a target portion of the present invention. FIG. 2 is a sectional view of an embodiment of the present invention, FIG. 3 is a sectional view of a conventional Q-example, and FIG. 4 is a perspective view of a target portion of a conventional example. 1, 24 in the figure. ．． 31 is a vacuum container, 2.32 is an exhaust device, and 3, 21, 33.53 are targets. 4.22, 23, 34.35 are magnets, 5.36 is a target support, 6.37 is a substrate, 7.38 is a substrate support,
8 is a substrate rotation mechanism, 9.39 is a shutter, 10.40 is a high voltage power supply, 12, 41.52 is an arcuate magnetic field, 42 is an earth shield, 51 is an erosion area (sputtered area) 25 is a magnet 22 26 is a cork of the magnet 23; 43 is a yoke of the magnet 34; and 44 is a yoke of the magnet 35.
Claims (1)
ット（２１）が第１のヨーク（２５）によって磁気的に
結合された一組の第１の略円環状磁石（２２）により支
持され、かつ第２のヨーク（２６）によって磁気的に結
合された一組の第２の略円環状磁石（２３）が前記磁石
（２２）の内外周から全体を包み込んだ入れ子構造をな
す様に構成されたターゲット支持体を有していることを
特徴とするスパッタリング装置。A disk-shaped ferromagnetic target (21) is supported in a vacuum container (1) by a set of first substantially annular magnets (22) magnetically coupled by a first yoke (25), A set of second generally annular magnets (23) magnetically coupled by a second yoke (26) is configured to form a nested structure that entirely wraps around the magnet (22) from the inner and outer peripheries. 1. A sputtering apparatus comprising a target support.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6132986A JPS62218562A (en) | 1986-03-19 | 1986-03-19 | Sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6132986A JPS62218562A (en) | 1986-03-19 | 1986-03-19 | Sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62218562A true JPS62218562A (en) | 1987-09-25 |
Family
ID=13167989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6132986A Pending JPS62218562A (en) | 1986-03-19 | 1986-03-19 | Sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62218562A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6372873A (en) * | 1986-09-12 | 1988-04-02 | Matsushita Electric Ind Co Ltd | Sputtering target of magnetron sputtering device |
| JPH01104771A (en) * | 1987-10-14 | 1989-04-21 | Anelva Corp | Plate magnetron sputtering device |
| WO1997037371A1 (en) * | 1996-04-02 | 1997-10-09 | Applied Vision Ltd. | Magnet array for magnetrons |
| FR2898136A1 (en) * | 2006-03-03 | 2007-09-07 | Commissariat Energie Atomique | Process for installing and/or deinstalling a hollow/filled magnetic target on a cathode magnetron for cathodic pulverization, comprises generating a permanent magnetic field above the target for controlling a magnetron magnetic field |
| JP2009167492A (en) * | 2008-01-18 | 2009-07-30 | Ulvac Japan Ltd | Film deposition source, and sputtering system |
| WO2011128004A1 (en) * | 2010-04-16 | 2011-10-20 | Oerlikon Trading Ag, Trübbach | Target for spark vaporization with physical limiting of the propogation of the spark |
| WO2021052497A1 (en) * | 2019-09-20 | 2021-03-25 | 深圳市晶相技术有限公司 | Semiconductor device |
-
1986
- 1986-03-19 JP JP6132986A patent/JPS62218562A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6372873A (en) * | 1986-09-12 | 1988-04-02 | Matsushita Electric Ind Co Ltd | Sputtering target of magnetron sputtering device |
| JPH01104771A (en) * | 1987-10-14 | 1989-04-21 | Anelva Corp | Plate magnetron sputtering device |
| WO1997037371A1 (en) * | 1996-04-02 | 1997-10-09 | Applied Vision Ltd. | Magnet array for magnetrons |
| US6159351A (en) * | 1996-04-02 | 2000-12-12 | Applied Vision Limited | Magnet array for magnetrons |
| FR2898136A1 (en) * | 2006-03-03 | 2007-09-07 | Commissariat Energie Atomique | Process for installing and/or deinstalling a hollow/filled magnetic target on a cathode magnetron for cathodic pulverization, comprises generating a permanent magnetic field above the target for controlling a magnetron magnetic field |
| JP2009167492A (en) * | 2008-01-18 | 2009-07-30 | Ulvac Japan Ltd | Film deposition source, and sputtering system |
| WO2011128004A1 (en) * | 2010-04-16 | 2011-10-20 | Oerlikon Trading Ag, Trübbach | Target for spark vaporization with physical limiting of the propogation of the spark |
| CN102822938A (en) * | 2010-04-16 | 2012-12-12 | 欧瑞康贸易股份公司(特吕巴赫) | Target for spark vaporization with physical limiting of the propogation of the spark |
| JP2013525600A (en) * | 2010-04-16 | 2013-06-20 | エリコン・トレーディング・アクチェンゲゼルシャフト，トリュープバッハ | Targets for spark deposition with spatially limited spark diffusion |
| US9657389B2 (en) | 2010-04-16 | 2017-05-23 | Oerlikon Surface Solutions Ag, Pfäffikon | Target for spark vaporization with physical limiting of the propagation of the spark |
| WO2021052497A1 (en) * | 2019-09-20 | 2021-03-25 | 深圳市晶相技术有限公司 | Semiconductor device |
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