JPH07157874A - Magnetron sputtering device - Google Patents
Magnetron sputtering deviceInfo
- Publication number
- JPH07157874A JPH07157874A JP30493093A JP30493093A JPH07157874A JP H07157874 A JPH07157874 A JP H07157874A JP 30493093 A JP30493093 A JP 30493093A JP 30493093 A JP30493093 A JP 30493093A JP H07157874 A JPH07157874 A JP H07157874A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetic pole
- target material
- magnetron sputtering
- soft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ターゲット材の局所的
な侵食（エロージョン）の発生を抑えて、ターゲット材
の利用効率を向上したマグネトロンスパッタリング装置
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetron sputtering apparatus which suppresses local erosion of a target material and improves the utilization efficiency of the target material.
【０００２】[0002]
【従来の技術】スパッタリング装置は、基板を陽極、タ
ーゲット材を陰極として低圧容器内に配置し、この低圧
容器内にある種の気体を希薄に充満させた状態で陽極−
陰極間に電界を印加してグロー放電プラズマを生成さ
せ、プラズマ中の陽イオンによるスパッタリング作用に
よって陽極基板の表面上に陰極ターゲット材成分を成膜
するものである。スパッタリング装置のうち、ターゲッ
ト材の裏面に永久磁石や電磁石を配置してターゲット材
表面に印加電界と直交する磁界を発生させながらスパッ
タリングを行えるようにしたものをマグネトロンスパッ
タリング装置という。マグネトロンスパッタリング装置
は、非常に高速な成膜が可能で、ハードディスクや光磁
気ディスクに使用される薄膜型磁気記録媒体や、導電性
透明薄膜等の成膜装置として使用されている。2. Description of the Related Art A sputtering apparatus has a substrate as an anode and a target material as a cathode, which is placed in a low-pressure container and is filled with a certain gas in the low-pressure container in a dilute state.
An electric field is applied between the cathodes to generate glow discharge plasma, and a cathode target material component is deposited on the surface of the anode substrate by the sputtering action of cations in the plasma. Among the sputtering devices, a magnetron sputtering device is one in which a permanent magnet or an electromagnet is arranged on the back surface of the target material so that sputtering can be performed while generating a magnetic field orthogonal to the applied electric field on the surface of the target material. The magnetron sputtering device is capable of very high-speed film formation, and is used as a film formation device for a thin film magnetic recording medium used for hard disks and magneto-optical disks, and conductive transparent thin films.
【０００３】図２は、従来のマグネトロンスパッタリン
グ装置の概念を示す断面図である。磁界発生機構１は、
中心磁極２とこれを囲む外周磁極３とからなる磁極対
と、該磁極対の底面に配置された磁気ヨーク材４と、該
磁極対の上面に配置された軟磁性体５から構成される。
軟磁性体５は、磁界発生機構１が発生する磁界の状態を
調整し、ターゲット材の局所的なエロージョンの発生を
抑制する。FIG. 2 is a sectional view showing the concept of a conventional magnetron sputtering apparatus. The magnetic field generation mechanism 1 is
The magnetic pole pair includes a central magnetic pole 2 and an outer peripheral magnetic pole 3 surrounding the central magnetic pole 2, a magnetic yoke material 4 arranged on the bottom surface of the magnetic pole pair, and a soft magnetic material 5 arranged on the upper surface of the magnetic pole pair.
The soft magnetic body 5 adjusts the state of the magnetic field generated by the magnetic field generation mechanism 1 and suppresses the occurrence of local erosion of the target material.
【０００４】磁界発生機構１上は、バッキングプレート
６と、ターゲット材７とが順次配置される。ターゲット
材７は、通常バッキングプレート６上にメタルボンディ
ングされる。バッキングプレート６は通常非磁性体の銅
製またはステンレス製であり、ターゲット材７は非磁性
体または磁性体いずれも用いられる。ターゲット材７の
上方には空間を隔てて基板８が設置される。軟磁性体５
は、磁極対より上方でターゲット材７より下方にあれ
ば、バッキングプレート６の上下いずれにあってもよ
く、バッキングプレート６に固定されるか、非磁性材料
の保持具によって適当な位置に保持される。A backing plate 6 and a target material 7 are sequentially arranged on the magnetic field generating mechanism 1. The target material 7 is usually metal-bonded on the backing plate 6. The backing plate 6 is usually made of a non-magnetic material such as copper or stainless steel, and the target material 7 is either a non-magnetic material or a magnetic material. A substrate 8 is installed above the target material 7 with a space in between. Soft magnetic material 5
May be above or below the backing plate 6 as long as they are above the pair of magnetic poles and below the target material 7, and are fixed to the backing plate 6 or held in an appropriate position by a holder made of a non-magnetic material. It
【０００５】上記構成は低圧容器（図示せず）内に納め
られており、この低圧容器内にある種の気体を希薄に充
満させた状態で、ターゲット材７を陰極、基板８を陽極
として一定の電位を与えると、低圧容器内の電子が加速
されこれが中性の気体と衝突して電離させる。この過程
が繰り返され、低圧容器内の電極間に低圧気体のグロー
放電プラズマが生成される。このときターゲット材７の
表面上には磁界発生機構１がつくる磁界が環状に漏洩す
る。この漏洩磁界によってプラズマ中の電子は磁力線に
沿った方向に捕捉され、ターゲット材表面上の環状の領
域に局所的に集中し、このためプラズマもその領域に非
常に高密度で集中する。このプラズマの陽イオンは電界
によって加速され、ターゲット材に衝突するとこれをス
パッタリングする。スパッタリングされたターゲット材
の粒子は陽極の基板８上に堆積し、ターゲット材７の成
分の薄膜が形成されることになる。The above structure is housed in a low-pressure container (not shown), and the target material 7 is used as a cathode and the substrate 8 is used as an anode in a state in which the low-pressure container is dilutely filled with a certain gas. When the electric potential of is applied, the electrons in the low-pressure container are accelerated and collide with a neutral gas to be ionized. This process is repeated, and low-pressure gas glow discharge plasma is generated between the electrodes in the low-pressure container. At this time, the magnetic field generated by the magnetic field generation mechanism 1 leaks annularly on the surface of the target material 7. Electrons in the plasma are trapped in the direction along the magnetic field lines by this leakage magnetic field, and are locally concentrated in an annular region on the surface of the target material, so that the plasma is also highly concentrated in that region. The positive ions of this plasma are accelerated by the electric field, and when they collide with the target material, they are sputtered. The sputtered target material particles are deposited on the anode substrate 8 to form a thin film of the component of the target material 7.
【０００６】ここで、上述したようにプラズマが一定領
域に集中するため、ターゲット材の局所的なエロージョ
ンが発生する。しかし、薄膜形成にはレアメタルを中心
とする高価なターゲット材が使用されており、ターゲッ
ト材の利用効率の向上が望まれている。ターゲット材の
局所的なエロージョンを抑制して利用効率を向上させる
方法には、特許公告平成３年第６２７８９号や特許公開
平成２年第１０７７６４号等がある。これらは軟磁性体
を磁極対の中心軸に対して軸対称に配置したものであ
る。Here, since the plasma is concentrated in a certain area as described above, local erosion of the target material occurs. However, an expensive target material, mainly a rare metal, is used for forming a thin film, and improvement in utilization efficiency of the target material is desired. As a method of suppressing local erosion of the target material to improve the utilization efficiency, there are Patent Publication No. 1991 No. 62789 and Patent Publication No. 107764. These are soft magnetic materials arranged symmetrically with respect to the central axis of the magnetic pole pair.
【０００７】[0007]
【発明が解決しようとする課題】しかし、上記従来方法
では、ターゲット材の利用効率は十分向上するとはいえ
ない。従って、本発明は上記問題点を解決するためにな
されたもので、ターゲット材の利用効率をより向上させ
たマグネトロンスパッタリング装置を提供することを目
的とする。However, the above conventional method cannot be said to sufficiently improve the utilization efficiency of the target material. Therefore, the present invention has been made to solve the above problems, and an object of the present invention is to provide a magnetron sputtering apparatus in which the utilization efficiency of a target material is further improved.
【０００８】[0008]
【課題を解決するための手段】磁界発生機構上にバッキ
ングプレートとターゲット材とが順次配置され、上記磁
界発生機構は、中心磁極とこれを囲む外周磁極とからな
る磁極対、該磁極対の底面に配置された磁気ヨーク材、
及び、該磁極対の上面に配置された軟磁性体から構成さ
れるマグネトロンスパッタリング装置において、本発明
の第１のマグネトロンスパッタリング装置は、上記磁界
発生機構の軟磁性体が透磁率の異なる２種以上の軟磁性
体材料からなる複数の軟磁性体片から構成される点に特
徴があり、また、本発明の第２のマグネトロンスパッタ
リング装置は、上記磁極対が保磁力または最大磁気エネ
ルギー積の異なる２種以上の磁石材料からなる複数の磁
石片から構成される点に特徴がある。A backing plate and a target material are sequentially arranged on a magnetic field generating mechanism, and the magnetic field generating mechanism has a magnetic pole pair composed of a central magnetic pole and an outer peripheral magnetic pole surrounding the central magnetic pole, and a bottom surface of the magnetic pole pair. Magnetic yoke material,
Further, in the magnetron sputtering apparatus composed of the soft magnetic material arranged on the upper surface of the magnetic pole pair, the first magnetron sputtering apparatus of the present invention is such that the soft magnetic material of the magnetic field generating mechanism has two or more kinds having different magnetic permeability. The present invention is characterized in that it is composed of a plurality of soft magnetic material pieces made of a soft magnetic material, and the second magnetron sputtering device of the present invention is characterized in that the magnetic pole pairs have different coercive forces or maximum magnetic energy products It is characterized in that it is composed of a plurality of magnet pieces made of at least one kind of magnet material.
【０００９】本発明のマグネトロンスパッタリング装置
は、磁界発生機構がリング状、矩形のいずれでも良い。
軟磁性体片は、互いに接触していても、離れていても良
く、形状が同じである必要はない。軟磁性体片の材料に
は、パーマロイ、パーメンジュール、純鉄、磁性ステン
レス材等が使用できる。磁石片は、互いに接触していて
も、離れていても良く、形状が同じである必要はない。
磁石片の材料には、ＳｍＣｏ5系磁石、ＮｄＦｅＢ系磁
石、アルニコ磁石、フェライト磁石等が使用できる。In the magnetron sputtering apparatus of the present invention, the magnetic field generating mechanism may be ring-shaped or rectangular.
The soft magnetic material pieces may be in contact with each other or separated from each other, and need not have the same shape. As the material of the soft magnetic material piece, permalloy, permendur, pure iron, magnetic stainless material or the like can be used. The magnet pieces may be in contact with or apart from each other and need not have the same shape.
As the material of the magnet pieces, SmCo 5 based magnets, NdFeB based magnets, alnico magnets, ferrite magnets and the like can be used.
【００１０】[0010]
【作用】本発明では、磁界発生機構が発生する磁界が磁
極対の中心軸に対して非対称となるため、ターゲット材
表面上に発生する磁力線に乱れが生じ、この結果、発生
するプラズマの収束も乱れ、ターゲット材のエロージョ
ンが局所的に生成するのを防止できると考える。In the present invention, since the magnetic field generated by the magnetic field generating mechanism is asymmetric with respect to the central axis of the magnetic pole pair, the magnetic field lines generated on the surface of the target material are disturbed, and as a result, the generated plasma is also converged. It is thought that it is possible to prevent turbulence and local generation of erosion of the target material.
【００１１】[0011]
実施例１ ・・・ 本発明のマグネトロンスパッタリン
グ装置を図２のように構成し、これを稼働してターゲッ
ト材の利用効率を調べた。装置は低圧容器内にに構成
し、マグネトロンカソードの構造は円形平板型とした。
磁極対には、直径２６ｍｍ、高さ３０ｍｍの円柱状の中
心磁極２と、同心円状にこれを囲む内径５４ｍｍ、外径
６２ｍｍ、高さ３０ｍｍの円筒状の外周磁極３とから構
成した。磁極対の材料はいずれもＳｍＣｏ5系永久磁石
を用いた。磁気ヨーク材４には、ＳＵＳ４３０系ステン
レス鋼製で厚さ２０ｍｍ、直径６２ｍｍの円盤状のもの
を用い、上記磁極対の底面に磁力で固定した。磁極対の
上面には僅かな間隙をおいて厚さ３ｍｍの銅製のバッキ
ングプレート６を配置し、このバッキングプレート６の
上面に軟磁性体５を埋設した。Example 1 The magnetron sputtering apparatus of the present invention was constructed as shown in FIG. 2 and operated to examine the utilization efficiency of the target material. The device was constructed in a low-pressure container, and the structure of the magnetron cathode was a circular flat plate type.
The magnetic pole pair was composed of a cylindrical central magnetic pole 2 having a diameter of 26 mm and a height of 30 mm, and a cylindrical outer magnetic pole 3 having an inner diameter of 54 mm, an outer diameter of 62 mm, and a height of 30 mm that concentrically surround the central magnetic pole 2. As the material of the magnetic pole pair, SmCo 5 type permanent magnets were used. As the magnetic yoke member 4, a disc-shaped member made of SUS430 stainless steel with a thickness of 20 mm and a diameter of 62 mm was used, and it was fixed to the bottom surface of the magnetic pole pair by magnetic force. A backing plate 6 made of copper and having a thickness of 3 mm was arranged on the upper surface of the magnetic pole pair with a slight gap, and the soft magnetic material 5 was embedded in the upper surface of the backing plate 6.
【００１２】軟磁性体５には、透磁率３００、飽和磁束
密度１７ｋＧのＳＵＹＰ０系の電磁軟鉄で、形状が厚さ
２．０ｍｍ、外径６２．０ｍｍ、内径３０．６ｍｍのリ
ングを中心軸を通る面で１２等分した形状の軟磁性体片
５ａを６つと、透磁率５０００、飽和磁束密度１５ｋＧ
のパーマロイ材製で、形状が軟磁性体片５ａと同じ形状
の軟磁性体片５ｂを６つを、５ａと５ｂが交互に並ぶよ
うにリング状に配置して構成した。ここで透磁率とは、
初透磁率をいう。図１はこの軟磁性体片５の構成を上方
から観察した図である。The soft magnetic material 5 is SUYP0 series electromagnetic soft iron having a magnetic permeability of 300 and a saturation magnetic flux density of 17 kG, and a ring having a thickness of 2.0 mm, an outer diameter of 62.0 mm, and an inner diameter of 30.6 mm is used as a central axis. 6 pieces of soft magnetic material pieces 5a divided into 12 equal parts on the passing surface, magnetic permeability 5000, saturation magnetic flux density 15 kG
6 made of permalloy material and having the same shape as the soft magnetic material piece 5a is arranged in a ring shape so that 5a and 5b are alternately arranged. Here, the magnetic permeability is
The initial permeability. FIG. 1 is a view of the structure of the soft magnetic material piece 5 observed from above.
【００１３】軟磁性体５を埋設したバッキングプレート
６の上には更に、厚さ３ｍｍ、直径３インチの円盤状タ
ーゲット材７をメタルボンディングして固定した。この
ターゲット材７は、非磁性体のＩＴＯ（インジウム−ス
ズ酸化物）とした。A disk-shaped target material 7 having a thickness of 3 mm and a diameter of 3 inches was further metal-bonded and fixed on the backing plate 6 in which the soft magnetic material 5 was embedded. The target material 7 was nonmagnetic ITO (indium-tin oxide).
【００１４】上記構成のマグネトロンスパッタリング装
置でスパッタリングをターゲット材の寿命まで行い、タ
ーゲット材の利用効率を測定した。ターゲット材の寿命
とは、エロージョンがターゲット材の背面に達して使用
できなくなるまでをいう。ターゲット材の利用効率は、
スパッタリングを始める前のターゲット材の重量（使用
前の重量）と、ターゲット材の寿命に達した後の重量
（寿命後の重量）の変化を測定して求めた。即ち、数式
１のように求めた。この結果、ターゲット材の利用効率
は５０（％）であった。Sputtering was carried out by the magnetron sputtering apparatus having the above-mentioned structure until the life of the target material, and the utilization efficiency of the target material was measured. The life of the target material refers to the time until the erosion reaches the back surface of the target material and becomes unusable. The target material utilization efficiency is
The weight of the target material before starting sputtering (weight before use) and the weight of the target material after reaching its life (weight after life) were measured and determined. That is, it was calculated as in Formula 1. As a result, the utilization efficiency of the target material was 50 (%).
【００１５】[0015]
【数１】ターゲット材の利用効率（％）＝（使用前の重
量−寿命後の重量）÷使用前の重量×１００（％）[Equation 1] Utilization efficiency of target material (%) = (weight before use−weight after life) ÷ weight before use × 100 (%)
【００１６】従来例１ ・・・ 軟磁性体として内径３
０．６ｍｍ、外径６２ｍｍ、厚さ２ｍｍの純鉄製リング
を採用した他は、実施例１と同じ構成のマグネトロンス
パッタリング装置でスパッタリングをターゲット材７の
寿命まで行い、ターゲット材の利用効率を測定した結
果、３５（％）であった。Conventional Example 1 ... 3 inner diameter as soft magnetic material
Except that a pure iron ring having a diameter of 0.6 mm, an outer diameter of 62 mm, and a thickness of 2 mm was adopted, sputtering was performed by the magnetron sputtering device having the same configuration as in Example 1 until the life of the target material 7, and the utilization efficiency of the target material was measured. As a result, it was 35 (%).
【００１７】実施例２ ・・・ 本発明のマグネトロン
スパッタリング装置を図２のように構成し、これを稼働
してターゲット材の利用効率を調べた。装置は低圧容器
内に構成し、マグネトロンカソードの構造は矩形型とし
た。磁極対には、幅１０ｍｍ、長さ１８０ｍｍ、高さ２
５ｍｍの中心磁極２と、これを囲むように配置した外周
が９０ｍｍ×２７０ｍｍ、幅が１５ｍｍの額縁状の外周
磁極３とから構成した。磁極対の材料は、保磁力８．２
ｋＯｅ、最大磁気エネルギー積１８．０ＭＧＯｅのＳｍ
Ｃｏ5系焼結磁石と、保磁力１０．５ｋＯｅ、最大磁気
エネルギー積３０ＭＧＯｅとＮｄＦｅＢ系焼結磁石とを
用いた。Example 2 A magnetron sputtering apparatus of the present invention was constructed as shown in FIG. 2 and operated to examine the utilization efficiency of a target material. The device was constructed in a low-pressure container, and the structure of the magnetron cathode was rectangular. The magnetic pole pair has a width of 10 mm, a length of 180 mm and a height of 2
The central magnetic pole 2 has a size of 5 mm, and the outer peripheral magnetic pole 3 is 90 mm × 270 mm and has a width of 15 mm. The material of the magnetic pole pair has a coercive force of 8.2.
kOe, Sm of maximum magnetic energy product 18.0 MGOe
A Co 5 type sintered magnet, a coercive force of 10.5 kOe, a maximum magnetic energy product of 30 MGOe and an NdFeB type sintered magnet were used.
【００１８】ここで、中心磁極２は形状が長さ３０ｍ
ｍ、幅１０ｍｍ、高さ２５ｍｍの上記ＳｍＣｏ5系焼結
磁石の磁石片２ａを３つと、同じ形状の上記ＮｄＦｅＢ
系焼結磁石の磁石片２ｂを３つとを交互に並べて配置
し、外周磁極３は形状が長さ３０ｍｍ、幅１５ｍｍ、高
さ２５ｍｍの上記ＳｍＣｏ5系焼結磁石の磁石片３ａを
１１個と、同じ形状の上記ＮｄＦｅＢ系焼結磁石の磁石
片３ｂを１１個とを交互に並べて配置し、もって磁極対
を構成した。図３はこの磁極対の構成を上方から観察し
た図である。Here, the shape of the central magnetic pole 2 is 30 m in length.
m, a width of 10 mm, and a height of 25 mm, and the above-mentioned NdFeB having the same shape as three magnet pieces 2a of the SmCo 5 system sintered magnet.
Three magnet pieces 2b of the system-based sintered magnet are arranged alternately, and the outer peripheral magnetic pole 3 has 11 pieces of the magnet piece 3a of the above SmCo 5 system sintered magnet having a shape of length 30 mm, width 15 mm, and height 25 mm. Then, 11 pieces of the magnet pieces 3b of the NdFeB system sintered magnets having the same shape were alternately arranged to form a magnetic pole pair. FIG. 3 is a view of the structure of this magnetic pole pair as viewed from above.
【００１９】磁気ヨーク材４には、厚さ２０ｍｍの矩形
状の磁性ステンレス材のＳＵＳ４３０系ステンレス鋼を
用い、上記磁極対の底面に磁力で固定した。磁極対の上
面には僅かな間隙をおいて厚さ３ｍｍの銅製のバッキン
グプレート６を配置し、このバッキングプレート６の上
面に２枚の軟磁性体５を埋設し、磁界発生機構１を構成
した。軟磁性体５には、長さ２４０ｍｍ、幅２５ｍｍの
純鉄製の板材を２枚用いた。As the magnetic yoke member 4, SUS430 series stainless steel, which is a rectangular magnetic stainless material having a thickness of 20 mm, was used and fixed to the bottom surface of the magnetic pole pair by magnetic force. A backing plate 6 made of copper and having a thickness of 3 mm is arranged on the upper surface of the magnetic pole pair with a slight gap, and two soft magnetic bodies 5 are embedded on the upper surface of the backing plate 6 to configure the magnetic field generating mechanism 1. . For the soft magnetic body 5, two plate members made of pure iron having a length of 240 mm and a width of 25 mm were used.
【００２０】軟磁性体５を埋設したバッキングプレート
６の上には更に、厚さ３ｍｍ、長さ２５０ｍｍ、幅６０
ｍｍの矩形状ターゲット材７をメタルボンディングして
固定した。このターゲット材７は、非磁性体のＩＴＯ
（インジウム−スズ酸化物）とした。On the backing plate 6 in which the soft magnetic material 5 is embedded, a thickness of 3 mm, a length of 250 mm and a width of 60 are further provided.
A rectangular target material 7 of mm was fixed by metal bonding. This target material 7 is a non-magnetic ITO
(Indium-tin oxide).
【００２１】上記構成のマグネトロンスパッタリング装
置でスパッタリングをターゲット材の寿命まで行い、タ
ーゲット材の利用効率を実施例１と同じように測定し
た。この結果、ターゲット材の利用効率は４７（％）で
あった。Sputtering was carried out by the magnetron sputtering apparatus having the above-mentioned structure until the life of the target material, and the utilization efficiency of the target material was measured in the same manner as in Example 1. As a result, the utilization efficiency of the target material was 47 (%).
【００２２】従来例２ ・・・ 磁極対には実施例２で
用いたＳｍＣｏ5系永久磁石の磁石片のみを用い、その
形状、配置は実施例２と同じにして、その他は実施例２
と同じ構成のマグネトロンスパッタリング装置でスパッ
タリングをターゲット材７の寿命まで行い、ターゲット
材の利用効率を測定した結果、３０（％）であった。Conventional Example 2 ... Only the magnetic piece of the SmCo 5 type permanent magnet used in Example 2 was used for the magnetic pole pair, the shape and arrangement were the same as those in Example 2, and the other examples were used.
It was 30 (%) as a result of measuring the utilization efficiency of the target material by performing the sputtering to the life of the target material 7 with the magnetron sputtering device having the same configuration as in.
【００２３】以上より、本発明のマグネトロンスパッタ
リング装置は、従来よりターゲット材の利用効率が高い
ことがわかる。尚、ターゲット材断面を観察すると、従
来例ではエロージョンは三角形に近い形状であり、これ
に対し実施例の装置では台形に近い形状で生じていた。
即ちこれは、ターゲット材が広い範囲で利用された証で
あり、これによっても本発明の装置のターゲット材の利
用効率が高いことがわかる。なお、実施例、従来例にお
けるターゲット材の寿命までの総使用期間はほぼ同じで
あったが、ターゲット材の利用効率が向上した分に比例
して、スパッタリング時の成膜速度が向上した。From the above, it can be seen that the magnetron sputtering apparatus of the present invention has a higher utilization efficiency of the target material than ever before. When the cross section of the target material is observed, in the conventional example, the erosion has a shape close to a triangle, whereas in the apparatus of the embodiment, the erosion has a shape close to a trapezoid.
That is, this is proof that the target material was used in a wide range, and it can be seen that the utilization efficiency of the target material in the apparatus of the present invention is also high. Although the total usage period of the target material up to the life of the example and the conventional example was almost the same, the deposition rate at the time of sputtering was improved in proportion to the improvement in the utilization efficiency of the target material.
【００２４】[0024]
【発明の効果】本発明のマグネトロンスパッタリング装
置によれば、ターゲット材の利用効率が従来より向上
し、これによりスパッタリング時の成膜速度も向上す
る。According to the magnetron sputtering apparatus of the present invention, the utilization efficiency of the target material is improved as compared with the conventional one, and the film formation rate during sputtering is also improved.
【図１】本発明の実施例のマグネトロンスパッタリング
装置の、軟磁性体の構成を上方から観察した図である。FIG. 1 is a view of a configuration of a soft magnetic material of a magnetron sputtering apparatus according to an embodiment of the present invention, which is observed from above.
【図２】マグネトロンスパッタリング装置の構成を示す
概念図である。FIG. 2 is a conceptual diagram showing the configuration of a magnetron sputtering apparatus.
【図３】本発明の実施例のマグネトロンスパッタリング
装置の、磁極対の構成を上方から観察した図である。FIG. 3 is a view of the configuration of the magnetic pole pair of the magnetron sputtering apparatus according to the embodiment of the present invention, which is observed from above.
１ 磁界発生機構 ２ 中心磁極 ３ 外周磁極 ２ａ、２ｂ、３ａ、３ｂ 磁石片 ４ 磁気ヨーク材 ５ 軟磁性体 ５ａ、５ｂ 軟磁性体片 ６ バッキングプレート ７ ターゲット材 ８ 基板 1 magnetic field generation mechanism 2 center magnetic pole 3 outer peripheral magnetic poles 2a, 2b, 3a, 3b magnet piece 4 magnetic yoke material 5 soft magnetic material 5a, 5b soft magnetic material piece 6 backing plate 7 target material 8 substrate
Claims (2)
ターゲット材とが順次配置され、上記磁界発生機構は、
中心磁極とこれを囲む外周磁極とからなる磁極対、該磁
極対の底面に配置された磁気ヨーク材、及び、該磁極対
の上面に配置された軟磁性体から構成されるマグネトロ
ンスパッタリング装置において、上記磁界発生機構の軟
磁性体が透磁率の異なる２種以上の軟磁性体材料からな
る複数の軟磁性体片から構成されることを特徴とするマ
グネトロンスパッタリング装置。1. A backing plate and a target material are sequentially arranged on a magnetic field generation mechanism, and the magnetic field generation mechanism comprises:
In a magnetron sputtering device composed of a magnetic pole pair composed of a central magnetic pole and an outer peripheral magnetic pole surrounding the central magnetic pole, a magnetic yoke material arranged on the bottom surface of the magnetic pole pair, and a soft magnetic material arranged on the upper surface of the magnetic pole pair, A magnetron sputtering apparatus, wherein the soft magnetic material of the magnetic field generating mechanism is composed of a plurality of soft magnetic material pieces made of two or more kinds of soft magnetic material having different magnetic permeability.
ターゲット材とが順次配置され、上記磁界発生機構は、
中心磁極とこれを囲む外周磁極とからなる磁極対、該磁
極対の底面に配置された磁気ヨーク材、及び、該磁極対
の上面に配置された軟磁性体から構成されるマグネトロ
ンスパッタリング装置において、上記磁極対が保磁力ま
たは最大磁気エネルギー積の異なる２種以上の磁石材料
からなる複数の磁石片から構成されることを特徴とする
マグネトロンスパッタリング装置。2. A backing plate and a target material are sequentially arranged on the magnetic field generation mechanism, and the magnetic field generation mechanism comprises:
In a magnetron sputtering device composed of a magnetic pole pair composed of a central magnetic pole and an outer peripheral magnetic pole surrounding the central magnetic pole, a magnetic yoke material arranged on the bottom surface of the magnetic pole pair, and a soft magnetic material arranged on the upper surface of the magnetic pole pair, A magnetron sputtering apparatus, wherein the magnetic pole pair is composed of a plurality of magnet pieces made of two or more kinds of magnet materials having different coercive forces or maximum magnetic energy products.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30493093A JPH07157874A (en) | 1993-12-06 | 1993-12-06 | Magnetron sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30493093A JPH07157874A (en) | 1993-12-06 | 1993-12-06 | Magnetron sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07157874A true JPH07157874A (en) | 1995-06-20 |
Family
ID=17939030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30493093A Pending JPH07157874A (en) | 1993-12-06 | 1993-12-06 | Magnetron sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07157874A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100793356B1 (en) * | 2005-12-13 | 2008-01-11 | 삼성에스디아이 주식회사 | sputtering equipment |
| JP2008106330A (en) * | 2006-10-27 | 2008-05-08 | Shin Etsu Chem Co Ltd | Magnetron sputtering apparatus |
| US20090229977A1 (en) * | 2005-11-04 | 2009-09-17 | Shinmaywa Industries, Ltd. | Magnet Structure and Cathode Electrode Unit for Magnetron Sputtering System, and Magnetron Sputtering System |
| WO2011024411A1 (en) * | 2009-08-28 | 2011-03-03 | 株式会社アルバック | Magnetron sputtering electrode and sputtering device |
| CN112048706A (en) * | 2020-07-29 | 2020-12-08 | 优贝克科技股份有限公司 | Sputtering target and method for adjusting magnetic force line distribution around sputtering target |
-
1993
- 1993-12-06 JP JP30493093A patent/JPH07157874A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090229977A1 (en) * | 2005-11-04 | 2009-09-17 | Shinmaywa Industries, Ltd. | Magnet Structure and Cathode Electrode Unit for Magnetron Sputtering System, and Magnetron Sputtering System |
| KR100793356B1 (en) * | 2005-12-13 | 2008-01-11 | 삼성에스디아이 주식회사 | sputtering equipment |
| JP2008106330A (en) * | 2006-10-27 | 2008-05-08 | Shin Etsu Chem Co Ltd | Magnetron sputtering apparatus |
| WO2011024411A1 (en) * | 2009-08-28 | 2011-03-03 | 株式会社アルバック | Magnetron sputtering electrode and sputtering device |
| CN112048706A (en) * | 2020-07-29 | 2020-12-08 | 优贝克科技股份有限公司 | Sputtering target and method for adjusting magnetic force line distribution around sputtering target |
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