JPS6220709B2 - - Google Patents

Info

Publication number: JPS6220709B2
Authority: JP; Japan
Prior art keywords: semiconductor substrate; insulating film; region; electrode; gate electrode
Prior art date: 1980-10-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP55145696A

Other languages

English (en)

Japanese (ja)

Other versions

JPS5660052A (en

Inventor

Fujio Masuoka

Hisakazu Iizuka

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Tokyo Shibaura Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-10-20

Filing date

1980-10-20

Publication date

1987-05-08

1980-10-20 Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd

1980-10-20 Priority to JP14569680A priority Critical patent/JPS5660052A/ja

1981-05-23 Publication of JPS5660052A publication Critical patent/JPS5660052A/ja

1987-05-08 Publication of JPS6220709B2 publication Critical patent/JPS6220709B2/ja

Status Granted legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 claims description 30
239000000758 substrate Substances 0.000 claims description 29
239000003990 capacitor Substances 0.000 claims description 14
229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
238000010586 diagram Methods 0.000 description 3
238000009792 diffusion process Methods 0.000 description 3
230000010354 integration Effects 0.000 description 3
239000011159 matrix material Substances 0.000 description 3
238000000034 method Methods 0.000 description 3
230000003071 parasitic effect Effects 0.000 description 3
229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
229910004298 SiO 2 Inorganic materials 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
239000000463 material Substances 0.000 description 2
239000007769 metal material Substances 0.000 description 2
230000001681 protective effect Effects 0.000 description 2
230000035945 sensitivity Effects 0.000 description 2
235000012239 silicon dioxide Nutrition 0.000 description 2
239000000377 silicon dioxide Substances 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
229910052681 coesite Inorganic materials 0.000 description 1
239000004020 conductor Substances 0.000 description 1
229910052906 cristobalite Inorganic materials 0.000 description 1
230000000694 effects Effects 0.000 description 1
239000003574 free electron Substances 0.000 description 1
239000011810 insulating material Substances 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
229910052682 stishovite Inorganic materials 0.000 description 1
239000000126 substance Substances 0.000 description 1
229910052905 tridymite Inorganic materials 0.000 description 1
238000007740 vapor deposition Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

Static Random-Access Memory (AREA)
Semiconductor Memories (AREA)

JP14569680A 1980-10-20 1980-10-20 Semiconductor memory device Granted JPS5660052A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP14569680A JPS5660052A (en)	1980-10-20	1980-10-20	Semiconductor memory device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP14569680A JPS5660052A (en)	1980-10-20	1980-10-20	Semiconductor memory device

Related Parent Applications (1)

Application Number	Title	Priority Date	Filing Date
JP50154769A Division JPS5279679A (en)	1975-12-26	1975-12-26	Semiconductor memory device

Publications (2)

Publication Number	Publication Date
JPS5660052A JPS5660052A (en)	1981-05-23
JPS6220709B2 true JPS6220709B2 (de)	1987-05-08

Family

ID=15390984

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP14569680A Granted JPS5660052A (en)	1980-10-20	1980-10-20	Semiconductor memory device

Country Status (1)

Country	Link
JP (1)	JPS5660052A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4989053A (en) *	1989-03-27	1991-01-29	Shelton Everett K	Nonvolatile process compatible with a digital and analog double level metal MOS process
US5554545A (en) *	1994-09-01	1996-09-10	United Microelectronics Corporation	Method of forming neuron mosfet with different interpolysilicon oxide thickness

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3387286A (en) *	1967-07-14	1968-06-04	Ibm	Field-effect transistor memory
JPS4964382A (de) *	1972-06-30	1974-06-21

1980
- 1980-10-20 JP JP14569680A patent/JPS5660052A/ja active Granted

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3387286A (en) *	1967-07-14	1968-06-04	Ibm	Field-effect transistor memory
JPS4964382A (de) *	1972-06-30	1974-06-21

Also Published As

Publication number	Publication date
JPS5660052A (en)	1981-05-23

Publication	Publication Date	Title
JP2723386B2 (ja)	1998-03-09	不揮発性ランダムアクセスメモリ
US4115795A (en)	1978-09-19	Semiconductor memory device
US4669062A (en)	1987-05-26	Two-tiered dynamic random access memory (DRAM) cell
JPH0260163A (ja)	1990-02-28	半導体メモリの製造方法
JPS60231357A (ja)	1985-11-16	半導体記憶装置
US4197554A (en)	1980-04-08	Monolithically integrated circuit arrangement comprising one-transistor storage elements
JP2621181B2 (ja)	1997-06-18	Ｍｉｓ型半導体記憶装置
US4513304A (en)	1985-04-23	Semiconductor memory device and process for producing the same
JPS6220709B2 (de)	1987-05-08
JPS6138620B2 (de)	1986-08-30
JPH065713B2 (ja)	1994-01-19	半導体集積回路装置
JPS6220708B2 (de)	1987-05-08
JPS6221273B2 (de)	1987-05-12
JPH0340509B2 (de)	1991-06-19
JPH0340510B2 (de)	1991-06-19
JP2842770B2 (ja)	1999-01-06	半導体集積回路およびその製造方法
JPS596068B2 (ja)	1984-02-08	半導体メモリ装置
JPS61140171A (ja)	1986-06-27	半導体記憶装置
JPH0691216B2 (ja)	1994-11-14	半導体記憶装置
JPS5810864B2 (ja)	1983-02-28	半導体記憶装置
JPS6120148B2 (de)	1986-05-21
JPS60189253A (ja)	1985-09-26	スタテイツク型半導体記憶装置
JPH022298B2 (de)	1990-01-17
JPH04340765A (ja)	1992-11-27	強誘電体メモリ
JPS6034272B2 (ja)	1985-08-07	半導体装置