JPS62182191A - Method for controlling shape of pulled-up crystal in cz process and apparatus therefor - Google Patents
Method for controlling shape of pulled-up crystal in cz process and apparatus thereforInfo
- Publication number
- JPS62182191A JPS62182191A JP2104686A JP2104686A JPS62182191A JP S62182191 A JPS62182191 A JP S62182191A JP 2104686 A JP2104686 A JP 2104686A JP 2104686 A JP2104686 A JP 2104686A JP S62182191 A JPS62182191 A JP S62182191A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- pulled
- laser beam
- pulling
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000007788 liquid Substances 0.000 claims abstract description 11
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 10
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 5
- 239000001569 carbon dioxide Substances 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 claims 1
- 238000010408 sweeping Methods 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000002109 crystal growth method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、ｃｚ法（（：ｚＯＣ）Ｉｒａｌｓｋｉ法）に
おいて結晶引上中に固液成長界面近傍にレーザービーム
を照射することにより、引上結晶の形状、表面平滑度を
制御する結晶成長方法に関する。Detailed Description of the Invention (Industrial Application Field) The present invention provides a method for pulling a crystal by irradiating a laser beam near the solid-liquid growth interface during crystal pulling in the cz method ((:zOC) Iralski method). This invention relates to a crystal growth method that controls crystal shape and surface smoothness.
（従来の技術）
一般に半導体の結晶成長方法は、ＣＺ法とＦＺ法（Ｈｏ
ａｔｉｎｇ ｚｏｎｅ法）が主なものであるが、半導体
基盤の主力であるシリコンは９０％迄がＣＺ法により製
造されている。(Prior art) Generally, semiconductor crystal growth methods include the CZ method and the FZ method (Ho
The CZ method is the main method, but up to 90% of silicon, which is the mainstay of semiconductor substrates, is manufactured by the CZ method.
（発明が解決しようとする問題点）
ＣＺ法は円柱状に単結晶を融液中から引上げる方法で、
引上結晶は外径加工により外面を整え、薄くスライスし
てウェハーに仕上げられるが、引上結晶の成長形状が真
円でないためグラインド加工等で上記の如く外径を加工
し外面を整える必要がある。また引上結晶の形状が円形
に限られるため、ウェハーの周辺ではチップが取れない
等の不便がある。(Problems to be solved by the invention) The CZ method is a method of pulling a single crystal from a melt in a cylindrical shape.
The outer surface of the pulled crystal is prepared by processing the outer diameter, and the wafer is finished by slicing it thinly. However, because the shape of the grown crystal is not a perfect circle, it is necessary to process the outer diameter and prepare the outer surface by grinding as described above. be. Furthermore, since the shape of the pulled crystal is limited to a circular shape, there are inconveniences such as the inability to remove chips from the periphery of the wafer.
本発明は上記の問題を解消し、再度の外径加工の不要な
真円状の表面平滑な引上げ結晶が得られる結晶成長方法
、および必要に応じ角柱状、板状、または曲柱面等の形
状の引上結晶が得られる結晶成長方法を従供しようとす
るものである。The present invention solves the above-mentioned problems and provides a crystal growth method that can obtain a perfectly circular pulled crystal with a smooth surface without the need for re-processing the outside diameter, and a crystal growth method that can produce a pulled crystal with a prismatic, plate-like, or curved surface as necessary. The purpose of this invention is to provide a crystal growth method that allows a pulled crystal to be obtained.
（問題点を解決するための手段）
本発明は、ＣＺ法において、結晶引上時に、斜め上方に
固定した発光器から引上結晶の固液成長界面近傍にむけ
てレーザービームを照射することを特徴とするＣＺ法に
おける引上結晶の形状制御方法、およびＣＺ法において
、結晶引上時に、引上結晶の水平回転とともに水平回転
する斜め上方の１または複数の発光器から引上結晶の固
液界面近傍にむけてレーザービームを引上結晶の円の弦
に沿って直線または曲線に揺動照射することを特徴とす
るＣＺ法における引上結晶の形状制御方法を要旨とする
。(Means for Solving the Problems) The present invention provides a method of irradiating a laser beam from a light emitter fixed diagonally upward to the vicinity of the solid-liquid growth interface of the pulled crystal during crystal pulling in the CZ method. A method for controlling the shape of a pulled crystal in the CZ method, and a method for controlling the shape of a pulled crystal in the CZ method. The gist of this paper is a method for controlling the shape of a pulled crystal in the CZ method, which is characterized in that a laser beam is oscillated in a straight line or curved line along the chord of the circle of the pulled crystal toward the vicinity of the interface.
以下、本発明を実施する装置を図示して本発明の機構と
作用を説明する。Hereinafter, the mechanism and operation of the present invention will be explained by illustrating an apparatus for carrying out the present invention.
装置は従来のＣＺ法結晶引上装置にレーザー装置を取付
けるようにしたものでよい。すなわち、第１図において
、炉体（９）は全体として縦に長い円筒状である。炉体
の底部には保温材（７）で囲繞されて熱源ヒーター（６
）が周囲に設けられ、その中に下部回転機構（８）に載
った黒鉛るつぼ（５）と、その内部に嵌められた石英る
つぼがあり、ヒーター（６）で溶解されたシリコン融液
（２）を満たす。The apparatus may be a conventional CZ method crystal pulling apparatus to which a laser apparatus is attached. That is, in FIG. 1, the furnace body (9) as a whole has a vertically long cylindrical shape. The bottom of the furnace body is surrounded by a heat insulator (7) and has a heat source heater (6).
) is provided around it, and inside it there is a graphite crucible (5) placed on a lower rotating mechanism (8) and a quartz crucible fitted inside the crucible. ) is satisfied.
炉頂外には上部回転吊上機構（１４）があって、それよ
り回転する引上棒（１６）が炉内に垂下する。引上棒（
１６）の先端には最初、シリコンの単結晶のシードを取
付け、シリコン融液（２）に浸されてから回転して引上
げられる。るつぼ（４） 、 （５）は引上げ回転とは
逆むきに回転する。引上げられる結晶（１）は円柱状に
成長しながら徐々に回転しながら上方に引上げられる。There is an upper rotating lifting mechanism (14) outside the top of the furnace, from which a rotating lifting rod (16) hangs down into the furnace. Pulling rod (
First, a silicon single crystal seed is attached to the tip of 16), and after being immersed in silicon melt (2), it is rotated and pulled up. The crucibles (4) and (5) rotate in the opposite direction to the pulling rotation. The crystal (1) to be pulled is gradually rotated and pulled upward while growing into a cylindrical shape.
（１０）は温度並びに結晶径センサーであり、（１１）
は結晶形状のセンサーである。結晶の溶解、引上時には
炉体（９）内は真空に引かれて、アルゴンガス等が封入
される０以上は通常のＣ２法結晶引上装置である。(10) is a temperature and crystal diameter sensor; (11)
is a crystal-shaped sensor. During crystal melting and pulling, the inside of the furnace body (9) is evacuated and argon gas or the like is sealed.
第１項の発明を実施するに当っては、装置の斜め上方に
レーザー発光器（１３）を上部回転吊上機構（１４）と
は別個に固定的に取付け、引上結晶（１）の固液界面近
傍にレーザービーム（３）を照射する。In carrying out the invention of item 1, a laser emitter (13) is fixedly attached diagonally above the device separately from the upper rotating lifting mechanism (14), and the pulled crystal (1) is fixed. A laser beam (3) is irradiated near the liquid interface.
図示例では引上結晶径５インチの炉に３０Ｗの炭酸ガス
レーザーを組合せた。In the illustrated example, a 30 W carbon dioxide laser was combined with a furnace having a pulling crystal diameter of 5 inches.
レーザービームを選ぶに当って反射を減じてエネルギー
吸収効率を良くするには適当な波長のものを選ぶことが
必要であり、例えばシリコンの光吸収端は１μｍのとこ
ろにあり、赤外光に対して１．５〜ｌＯμｍの範囲で約
５０％の透過率をもつので、１０μｍの波長をもつ炭酸
ガスレーザーを選んだ（第３図）。When selecting a laser beam, it is necessary to select one with an appropriate wavelength to reduce reflection and improve energy absorption efficiency. For example, the optical absorption edge of silicon is at 1 μm, and it is A carbon dioxide laser with a wavelength of 10 μm was selected because it has a transmittance of about 50% in the range of 1.5 to 10 μm (Figure 3).
なおレーザー発光器（１３）を炉体（９）外に設けたの
で炉内に導入する窓（１２）を炉に設ける必要があり、
その材質を何にすべきかが問題であるが、レーザービー
ムの波長と透過率の関係（第３図）から図示例ではＳｉ
の窓を用いた。厚さ１０ｍ＋ｗとし、低圧雰囲気でも充
分強度的にもつようにした。In addition, since the laser emitter (13) was installed outside the furnace body (9), it was necessary to install a window (12) in the furnace to introduce it into the furnace.
The problem is what material it should be made of, but from the relationship between the wavelength of the laser beam and the transmittance (Figure 3), the illustrated example is Si.
window was used. The thickness was 10m+w, and it was made to have sufficient strength even in a low-pressure atmosphere.
引上結晶成長時にレーザー発光器（１３）より引上結晶
（１）の固液成長界面近傍の一点にむけてレーザービー
ム（３）を照射すると、結晶の回転引上げに伴い、結晶
（１）の形状がビームの位置と出力の制御により精密な
円形の平滑な表面に仕上り、従って、表面の丸目加工が
不必要になる。When growing a pulled crystal, when a laser beam (3) is irradiated from a laser emitter (13) to a point near the solid-liquid growth interface of the pulled crystal (1), as the crystal rotates and is pulled up, the crystal (1) By controlling the position and output of the beam, a smooth surface with a precise circular shape can be achieved, thus eliminating the need for rounding the surface.
第２項の発明を実施するに当っては、炉頂外の上部回転
吊上機構（１４）の水平回転と共に周囲を回転するよう
レーザー発光器（１３）を取付け、さらにレーザービー
ムの揺動機構（１５）を設ける。従って、レーザー発光
器（１３）は上部回転吊上機構（１４）の吊上水平回転
に伴って、前記機１ （１４）の周囲を同期的に回転し
ながら揺動し、レーザービームは結晶の基部を円の弦に
沿って揺動運動しながら引上結晶とともに回転を行うこ
とになる。In carrying out the invention of item 2, the laser emitter (13) is installed so as to rotate around the horizontal rotation of the upper rotating lifting mechanism (14) outside the top of the furnace, and a laser beam swinging mechanism is also provided. (15) is provided. Therefore, the laser emitter (13) oscillates while rotating synchronously around the machine 1 (14) as the upper rotating lifting mechanism (14) rotates horizontally, and the laser beam is directed toward the crystal. The base rotates together with the pulled crystal while swinging along the chord of the circle.
第２図にその概要を示す、このような装置を使用して例
えば引上結晶の基部を直線的にスイープすると、引上結
晶に一つの柱面ができる。引上げ開始前に種の結晶方向
をレーザーの揺動方向と一致させておけば指向性平面（
ｏｒｉｅｎｔａｔｉｏｎ ｆｌａｔ ）を結晶引上中に
形成でき、後に加工する必要がなくなる。For example, when the base of a pulled crystal is swept linearly using such a device, the outline of which is shown in FIG. 2, one cylindrical surface is formed on the pulled crystal. If the crystal direction of the seed is aligned with the oscillation direction of the laser before starting pulling, the directional plane (
orientation flat ) can be formed during crystal pulling, eliminating the need for subsequent processing.
複数個のレーザー発光器を用いる場合、例えば２本のビ
ームを使えば２柱面ができ、４本のビームを使うと角柱
の引上結晶を得ることができる。When using a plurality of laser emitters, for example, two beams can be used to create two cylindrical surfaces, and four beams can be used to create a prismatic pulled crystal.
このようにして厚板、或いは薄板状の単結晶もつくるこ
とができるし、異形断面の結晶や、直線の代わりに曲線
にスイープすることにより任意の曲柱面や凹凸面結晶な
どもつくることができる。In this way, thick plate or thin plate-shaped single crystals can be made, and crystals with irregular cross-sections and arbitrary curved cylindrical surfaces and irregular surface crystals can also be made by sweeping curves instead of straight lines. can.
（実施例）
５インチの引上結晶用のＣＺ引上装置に３０Ｗの炭酸ガ
スレーザー発光器を第１図に示す如く固定的に取付け、
発光器から引上結晶の固液成長界面の一点にむけてレー
ザービームを照射しつつ、結晶引上げを行った６通常の
ＣＺ法による５インチφの引上結晶における丸目加工ロ
スは、製品径１２５翔−に対し引上直径は１２７．５ｍ
＋＊であり、引上径に対する削りロスは３．９％であっ
たが、末法によれば１％以下に向上した。(Example) A 30W carbon dioxide laser emitter was fixedly attached to a CZ pulling device for a 5-inch pulled crystal as shown in Figure 1.
The crystal was pulled while irradiating a laser beam from the light emitter to one point at the solid-liquid growth interface of the pulled crystal.6 The rounding loss for a 5 inch φ pulled crystal using the normal CZ method was as follows: Product diameter 125 The lifting diameter for Sho is 127.5m.
+*, and the cutting loss relative to the drawing diameter was 3.9%, but it improved to 1% or less by using the finishing method.
同じく５インチの引上結晶用のＣＺ引上装置に３０Ｗの
炭酸ガスレーザー発光器４台を第２図に準じて、上部回
転吊上機構と共に水平回転するよう各対称位置に取付け
、これらの発光器から引上結晶の基部にむけ結晶が角柱
を形成するよう揺動照射した結果、−辺１０１龍の角柱
結晶が得られた。Similarly, four 30W carbon dioxide laser emitters were attached to the CZ pulling device for 5-inch crystals at symmetrical positions so that they would rotate horizontally together with the upper rotating lifting mechanism, as shown in Figure 2. As a result of oscillating irradiation from the vessel toward the base of the pulled crystal so that the crystal forms a prism, a prism crystal with -side 101 dragon was obtained.
これは外面を殆ど加工することな（、其のままウェハー
に切断して太陽電池用基板とすることができた。This could be cut into wafers and used as substrates for solar cells without requiring much processing on the outer surface.
（発明の効果）
本発明は、ＣＺ法において引上結晶の固液成長界面近傍
に直接レーザービームのエネルギーを加えることにより
、引上結晶の形状を自由に制御する方法であるから、引
上結晶の研削、その他外面加工の工数を′ＷＪ減し、且
つ歩留りを著しく向上する等、きわめて優れた効果を有
している。(Effects of the Invention) The present invention is a method for freely controlling the shape of a pulled crystal by directly applying laser beam energy near the solid-liquid growth interface of the pulled crystal in the CZ method. It has extremely excellent effects, such as reducing the number of man-hours for grinding and other external surface processing, and significantly improving yield.
第１図は本発明方法を実施する装置の機構図である。第
２図は本発明の他の方法を実施する装置の機構図である
。第３図は光の波長と材料側の透過率の関係を示す曲線
図である。
ｌ：引上結晶、２：融液、３：レーザービーム、４：石
英るつぼ、５：黒鉛るつぼ、６：ヒーター、７：保温材
、８：下部回転機構、９：炉体、＋０，０：センサー、
１２：シリコン窓、１３：レーザー発光器、１４：上部
回転吊上機構、１５：レーザービーム揺動装置、１６：
引上棒FIG. 1 is a mechanical diagram of an apparatus for carrying out the method of the present invention. FIG. 2 is a mechanical diagram of an apparatus for carrying out another method of the present invention. FIG. 3 is a curve diagram showing the relationship between the wavelength of light and the transmittance of the material. l: pulled crystal, 2: melt, 3: laser beam, 4: quartz crucible, 5: graphite crucible, 6: heater, 7: heat insulating material, 8: lower rotation mechanism, 9: furnace body, +0,0: sensor,
12: Silicon window, 13: Laser emitter, 14: Upper rotation lifting mechanism, 15: Laser beam swinging device, 16:
pulling rod
Claims (3)
した発光器から引上結晶の固液成長界面近傍にむけてレ
ーザービームを照射することを特徴とするＣＺ法におけ
る引上結晶の形状制御方法。(1) Shape of a pulled crystal in the CZ method, which is characterized in that during crystal pulling, a laser beam is irradiated from a light emitter fixed diagonally upward toward the vicinity of the solid-liquid growth interface of the pulled crystal. Control method.
回転とともに水平回転する斜め上方の１または複数の発
光器から引上結晶の固液成長界面近傍にむけてレーザー
ビームを引上結晶の円の弦に沿って直線または曲線に揺
動照射することを特徴とするＣＺ法における引上結晶の
形状制御方法。(2) In the CZ method, when pulling a crystal, a laser beam is directed toward the vicinity of the solid-liquid growth interface of the pulled crystal from one or more light emitters located diagonally above that rotate horizontally with the horizontal rotation of the pulled crystal. 1. A method for controlling the shape of a pulled crystal in the CZ method, characterized by oscillating irradiation in a straight line or curve along the chord of a circle.
長界面近傍にむけて炭酸ガスレーザービームを照射する
発光器を取付け、当該発光器よりレーザービームを炉体
内に導入するためのシリコン材製の窓を炉体に設けたこ
とを特徴とするＣＺ法結晶引上装置。(3) A light emitter that irradiates a carbon dioxide laser beam toward the vicinity of the solid-liquid growth interface of the pulled crystal is installed outside the furnace body of the CZ method crystal pulling apparatus, and the laser beam is introduced into the furnace body from the light emitter. A CZ method crystal pulling apparatus characterized in that a window made of silicon material is provided in the furnace body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2104686A JPS62182191A (en) | 1986-01-31 | 1986-01-31 | Method for controlling shape of pulled-up crystal in cz process and apparatus therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2104686A JPS62182191A (en) | 1986-01-31 | 1986-01-31 | Method for controlling shape of pulled-up crystal in cz process and apparatus therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62182191A true JPS62182191A (en) | 1987-08-10 |
Family
ID=12043983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2104686A Pending JPS62182191A (en) | 1986-01-31 | 1986-01-31 | Method for controlling shape of pulled-up crystal in cz process and apparatus therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62182191A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01113644U (en) * | 1988-01-26 | 1989-07-31 | ||
| JPH02267195A (en) * | 1989-04-05 | 1990-10-31 | Nippon Steel Corp | Silicon single crystal excellent in withstand voltage characteristic of oxide film and production thereof |
-
1986
- 1986-01-31 JP JP2104686A patent/JPS62182191A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01113644U (en) * | 1988-01-26 | 1989-07-31 | ||
| JPH02267195A (en) * | 1989-04-05 | 1990-10-31 | Nippon Steel Corp | Silicon single crystal excellent in withstand voltage characteristic of oxide film and production thereof |
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