JPS62159914A - Ecl compatible output circuit - Google Patents

Ecl compatible output circuit

Info

Publication number
JPS62159914A
JPS62159914A JP61002451A JP245186A JPS62159914A JP S62159914 A JPS62159914 A JP S62159914A JP 61002451 A JP61002451 A JP 61002451A JP 245186 A JP245186 A JP 245186A JP S62159914 A JPS62159914 A JP S62159914A
Authority
JP
Japan
Prior art keywords
fet
voltage
output
current
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61002451A
Other languages
Japanese (ja)
Inventor
Kunio Nagashima
長島 邦雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP61002451A priority Critical patent/JPS62159914A/en
Publication of JPS62159914A publication Critical patent/JPS62159914A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09432Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors with coupled sources or source coupled logic
    • H03K19/09436Source coupled field-effect logic [SCFL]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003Modifications for increasing the reliability for protection
    • H03K19/00369Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/0185Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507Interface arrangements
    • H03K19/018535Interface arrangements of Schottky barrier type [MESFET]
    • H03K19/018542Interface arrangements of Schottky barrier type [MESFET] with at least one differential stage

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Manipulation Of Pulses (AREA)

Abstract

PURPOSE:To reduce the fluctuation of an output voltage with respect to the variation of an input voltage and a threshold voltage by using a source resistor in place of a constant current source using a FET and always allowing a constant current to flow to a load resistor of the FET whose gate receives a reference voltage so as to apply an output voltage level shift. CONSTITUTION:The titled output consists of normally-on type MESFETs 100, 204, 206, a source resistor 300 and a load resistor 200. When the input voltage is a reference voltage Vref or over, a current I2 flows to the FET 204 only by the input voltage. A constant current I0 decided by the FET 100 flows to the load resistor 200 in this case and a high level output voltage is obtained. When the input voltage is the voltage Vref, the sum of the current I0 flowing to the FET 100 and the current Ic flowing to the source resistor 300 flows to the load resistor 200 and the output voltage goes to a low level. Thus, the fluctuation of the output level to the variation of the threshold value VT is less. Moreover, the high level output is decided in the output circuit independently of the current I2 flowing to the FET 204 and the effect of the input voltage is not given.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明なGaAs LSI等に用いられるECL コン
パチブル出力回路に関する。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an ECL compatible output circuit used in GaAs LSI and the like.

(従来の技術) 一般JこDCFL、BFLなどを用いたGaAsL8I
においては、その内部論理レベルは電源電圧によって一
部に定められてしまう。
(Prior art) GaAsL8I using general JCO DCFL, BFL, etc.
, its internal logic level is determined in part by the power supply voltage.

このため、その出力レベルを既存のECLなどとコンパ
チブルとする為に出力振幅を電源電圧と無関係に設定す
ることのできる5CFLが用いられることが多い。
Therefore, in order to make the output level compatible with existing ECLs, etc., a 5CFL whose output amplitude can be set independently of the power supply voltage is often used.

このような5CFLの具体例としては例えば昭和58年
四学全連合大会3〜150頁1’−GaAsティジタル
集積回路」(発表者、東坂浅光)に記載のものが知られ
ている。
As a specific example of such a 5CFL, the one described in "GaAs Digital Integrated Circuit" (presenter: Asamitsu Higashizaka), page 3-150 of the 1981 Four Academic Union Conference, is known.

第2図に従来技術によるBCLコンパチブル出力回路の
一例を示す。
FIG. 2 shows an example of a BCL compatible output circuit according to the prior art.

第2図において負荷抵抗200.201を流れる電流を
それぞれL−I−とするとマへの2つの電流の和は常に
FET202を流れる電流ICに等しい。
In FIG. 2, if the currents flowing through the load resistors 200 and 201 are L-I-, the sum of the two currents flowing through the FET 202 is always equal to the current IC flowing through the FET 202.

ここでFET204のゲート端子205にFET206
のゲート端子に接続された基準電圧電源207の電圧V
ra f以上の電圧が加えられるとli’ET202を
流れる電流ICはナベてPBT 204−I−流れ出力
端子208にはハイレベルV0菖が出力される。
Here, FET206 is connected to the gate terminal 205 of FET204.
The voltage V of the reference voltage power supply 207 connected to the gate terminal of
When a voltage higher than ra f is applied, the current IC flowing through the li'ET 202 becomes flat and a high level V0 signal is output to the PBT 204-I-flow output terminal 208.

この為第2図に示した出力回路の/鴬イレベルvO11
は抵抗203の抵抗値Rによって次式の如く定められる
For this reason, the output circuit shown in Fig. 2 has a level vO11 of
is determined by the resistance value R of the resistor 203 as shown in the following equation.

V   =−RI     ・・・・・・・・・ (1
)on          ( 一方、ゲート端子205にVref以下の電圧が加えら
れた場合にはFIT 202−F流れる電流ICはすべ
てPET 206を流れこの時の出力電圧vOLは負荷
抵抗200の抵抗値RLによって次式の如く与えられる
V = -RI ・・・・・・・・・ (1
) on (On the other hand, when a voltage lower than Vref is applied to the gate terminal 205, all the current IC flowing through the FIT 202-F flows through the PET 206, and the output voltage vOL at this time is calculated by the following formula based on the resistance value RL of the load resistor 200. It is given as follows.

Vot、=−(R+Rt、)  I(・・・−”・・ 
(2)(発明が解決しようとする問題点) 第2図においてPET 202の伝達コンダクタンス並
びに閾値電圧をそれぞれβ、■!とするとPET 20
2を流れる電流ICは次式によって得ら□ れるシ 雪 lc;β・V、     ・・・・・・・・・ (3)
上式を(1)、(2)式に代入すると ■。ヨ=Jl、・β・V、F     ・・・・・・・
・・ (4)YOL ”−G+RL)β■I  ・・・
・・・・・・(5)一般−CGaAs Mg2 FFf
Tは現状ではV、のバラツキが大き、〈このため第(4
)、 (5)式から明らかな、ようlこ第2図に示した
出力回路はVoi+eVoLともに■、のバラツキに対
する依存度が大きい。
Vot, =-(R+Rt,) I(...-"...
(2) (Problems to be Solved by the Invention) In FIG. 2, the transfer conductance and threshold voltage of the PET 202 are β and ■!, respectively. Then PET 20
The current IC flowing through 2 is obtained by the following formula: lc; β・V, ...... (3)
Substituting the above equation into equations (1) and (2) yields ■. Yo=Jl,・β・V,F・・・・・・・
・・・ (4)YOL”-G+RL)β■I ・・・
・・・・・・(5) General-CGaAs Mg2 FFf
Currently, T has large variations in V,
), It is clear from equation (5) that the output circuit shown in FIG. 2 is highly dependent on the variation in both Voi+eVoL.

第3図(a)は第2図に示した出力回路のFET202
に代わシ抵抗値R,を有する抵抗3008用いた例を示
す。
Figure 3(a) shows the FET 202 of the output circuit shown in Figure 2.
An example will be shown in which a resistor 3008 having a resistance value R is used instead.

図中、第2図と同一番号を付したものは第2図と同一の
構成要素を示している。
In the figure, the same numbers as in FIG. 2 indicate the same components as in FIG. 2.

なお、第3図(a)におかては説明を簡略にする為に第
2図に示したレベルシフト用抵抗203は省略されてい
る。
Note that in FIG. 3(a), the level shift resistor 203 shown in FIG. 2 is omitted to simplify the explanation.

第3図中)は第3図(a)に示した出力回路の入出力特
性を示す。
3) shows the input/output characteristics of the output circuit shown in FIG. 3(a).

図中、301および302はそれぞれ第3図−)に示し
た出力端子303および304の出力電圧を示す。
In the figure, 301 and 302 indicate the output voltages of the output terminals 303 and 304 shown in FIG. 3-), respectively.

第3図(a)において入力端子205に加えられる電圧
がVrefに比して十分率さな領域305#こおいて社
Fg’l’ 204はカットオフ状態、FB’l’ 2
06は飽和状態にあム出入端子304の電圧V。Lはは
は次式によって表わすことができる。
In FIG. 3(a), in a region 305# where the voltage applied to the input terminal 205 is sufficiently high compared to Vref, the company Fg'l' 204 is in a cut-off state, and FB'l' 2
06 is the voltage V of the AM input/output terminal 304 in the saturated state. L can be expressed by the following equation.

VOL= (Vref  ’ss )・(RL/R8)
 ・・・−46)また入力端子205に加えられる電圧
がVref  の近傍の領域306においてはPFIT
 204.206とも番こ飽和状態となる。
VOL= (Vref'ss)・(RL/R8)
...-46) Also, in the region 306 where the voltage applied to the input terminal 205 is Vref, the PFIT
Both 204 and 206 are saturated.

更に入力端子205に加えられる“電圧力Vrefに対
して大きな領域307において祉FF1T 206は力
、トオフ状態、Fli!T 204は飽和状態となりP
ET 204を流れる電流1.は入力端子205に(5
)ン\ 加えられる電圧Vinによって次式の如く表すことがで
きる。
Furthermore, in a region 307 that is large with respect to the voltage force Vref applied to the input terminal 205, the FF1T 206 is in a power-off state, and the Fli!T 204 is in a saturated state, P
Current flowing through ET 2041. is input to the input terminal 205 (5
)n\ It can be expressed as the following equation by the applied voltage Vin.

Im ” (V tn −Mg14 ) / IRs 
  ・・・・・・ (7)したがって、第3図(a)−
こ示す出力回路lこおいては第3図(b)の301#こ
示す如<Vinの増加にともなって出力端子205の電
圧が下降し電流l諺と!−の和lcは第2図に示した出
力回路と異なり常に一定の値に保つことはできない。 
    。
Im” (Vtn-Mg14)/IRs
...... (7) Therefore, Figure 3 (a) -
In this output circuit 1, as shown in 301# in FIG. 3(b), as Vin increases, the voltage at the output terminal 205 decreases and the current decreases. Unlike the output circuit shown in FIG. 2, the sum lc of - cannot always be kept at a constant value.
.

仁の為第2図に示した抵抗203によるレベルシフトを
第3図(a)に示した出力回路に適用すると出力端子3
04のハイレベルvoMは次式の如く表わされ入力電圧
Vinに依存する値となる。
For convenience, if the level shift by the resistor 203 shown in FIG. 2 is applied to the output circuit shown in FIG. 3(a), the output terminal 3
The high level voM of 04 is expressed as the following equation and has a value that depends on the input voltage Vin.

■。m ”−(■i、n−■ss )゛・(i/Ra)
・・・・・・(8)本発明の目的はハイレベル出力電圧
V。ut  が入力電圧Win に依存せず、tたVテ
のバラツキに対する出力電圧への影響の少ないECL:
yンパチプル出力回路を提供することにある。
■. m ”-(■i, n-■ss)゛・(i/Ra)
(8) The object of the present invention is high level output voltage V. ECL in which ut does not depend on the input voltage Win and the output voltage is less affected by variations in t:
The object of the present invention is to provide a multiple output circuit.

脈1.・ (問題を解決するための手段) 本発明によればゲート端子に入力信号を加えられドレイ
ン端子を第1の電源に接続された第1のFETと、ゲー
ト端子に基準電圧を加えられ前記第1のFETのソース
端子にソース端子を接続された第2のFETと、前記第
2のFETのドレイン端子と、前記第1の電源との間に
設けられた負荷抵抗と、前記第2のFE’J’のソース
端子と第2の電源との間に設けられたソース抵抗とから
構成される5CFL回路において、前記負荷抵抗の一部
もしくは全部に常時一定の電流を流す手段を更に付加し
たことを特徴とするECLコンパチブル出力回路が得ら
れる。
Pulse 1. - (Means for solving the problem) According to the present invention, a first FET is provided with an input signal applied to its gate terminal and whose drain terminal is connected to a first power supply, and a first FET with a reference voltage applied to its gate terminal. a second FET whose source terminal is connected to the source terminal of the first FET; a load resistor provided between the drain terminal of the second FET and the first power supply; In a 5CFL circuit consisting of a source resistor provided between the source terminal of 'J' and a second power supply, a means is further added to cause a constant current to flow through part or all of the load resistor. An ECL compatible output circuit is obtained.

(作用) 本発明はFETを用いた定電流源にかわってソース抵抗
を用い、かつゲート端子に基準電圧が加えられたPET
の負荷抵抗に常時一定の電流を流すことによって出力電
圧のレベルシフトを行なっておルこれによって入力電圧
Vinや閾値電圧■、のバラツキに対する出力電圧の変
動を軽減しようとするものである。
(Function) The present invention uses a source resistor instead of a constant current source using an FET, and a PET with a reference voltage applied to the gate terminal.
The level shift of the output voltage is carried out by constantly flowing a constant current through the load resistance of the circuit, thereby attempting to reduce fluctuations in the output voltage due to variations in the input voltage Vin and the threshold voltage (2).

(実施例) 次にこの発明の実施例を図面を参照して説明する。(Example) Next, embodiments of the invention will be described with reference to the drawings.

第1図は本発明の実施例を示す。FIG. 1 shows an embodiment of the invention.

図中、第2図、第3図と同一番号を付したものは第2図
、第3図と同一の構成要素を示す。
In the drawings, the same numbers as in FIGS. 2 and 3 indicate the same components as in FIGS. 2 and 3.

第1図において入力端子205に基準電圧vref以上
の電圧が加えられるとFET 206Fiカツトオフ状
態となりFET204のみに入力電圧■ioによって次
式の如く定まる電流1.が流れる。
In FIG. 1, when a voltage higher than the reference voltage vref is applied to the input terminal 205, the FET 206Fi is cut off, and the current 1. flows.

L=(Vin−V’ss)/Re   ・−川・・(9
)このとき負荷抵抗200にはFgTlooによって定
まる一定の電流■・が流れておハこれにより出力端子2
08には次式で与えられるハイレベル出力電圧V。アが
表われる。
L=(Vin-V'ss)/Re ・-river...(9
) At this time, a constant current determined by FgTloo flows through the load resistor 200, which causes the output terminal 2 to
08 is a high level output voltage V given by the following formula. A appears.

V on =  Rt、 I−””−”  (+(また
場合には負荷抵抗200にはl”ETlooを流れる電
流1.とソース抵抗300を流れる電流lc の和が流
れるローレベル出力電圧V。Lは次式によって与えられ
る。
V on = Rt, I-""-" (+(In this case, the load resistor 200 has a low-level output voltage V. L where the sum of the current 1. flowing through l"ETloo and the current lc flowing through the source resistor 300 flows. is given by the following equation.

VoL= −(lo +Ic) 1(1H・=  aυ
ここでPUTlooの伝達コンダクタンス、閾値をそれ
ぞれβ、■、とすると電流値l。は次式で表れずことが
できる。
VoL= −(lo +Ic) 1(1H・= aυ
Here, if the transfer conductance and threshold value of PUTloo are β and ■, respectively, the current value is l. can be expressed in the following equation.

冨 IO=β■T     ・・・・・・・・・・・ 04
さらにFET204を流れる電流1cFi基準電圧Vr
efを用いて、次のように表わせる。
Fuji IO=β■T ・・・・・・・・・・・・ 04
Further, current 1cFi flowing through FET 204 and reference voltage Vr
Using ef, it can be expressed as follows.

I c = (vref −Vss ) / l(s 
 ’・・・・・・・・ 峙ここで式<IL (131を
式aa、Uに代入するとvos −−RL79v、、 
z   ・・・・・・・・・・・・ (J<式aa、 
asと式(4)、 +53とを比較すれば本発明tこよ
る出力回路は第2図に示した従来町による出力回路に対
してV、rのバラツキ1こ対する出力レベルの変動が少
ないことがわかる。
Ic = (vref −Vss) / l(s
'・・・・・・・・・ where the expression <IL (Substituting 131 into the expression aa, U, vos --RL79v,,
z ・・・・・・・・・・・・ (J<expression aa,
Comparing as, equation (4), and +53, it can be seen that the output circuit according to the present invention exhibits less fluctuation in output level relative to the variation in V and r compared to the conventional output circuit shown in Fig. 2. I understand.

更にまた本発明による出力回路はlFET204を流れ
る′電流1.とけ無関係にハイレベル出力V。
Furthermore, the output circuit according to the present invention has a current 1. High level output V regardless of melting.

を足めることができ入力電圧v1nの影響を受けること
がなり0 (発明の効果) 以上述べたように本発明によればVl、のバラツキや入
力電圧による国力電圧レベルの変動の少ない1(CLコ
ンパチブル出力回路が得られる。
(Effects of the Invention) As described above, according to the present invention, it is possible to add 1( A CL compatible output circuit is obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の実施例を示す図、第2図は従来技術に
よるECLコンパチブル出力回路の第1の具体例を示す
因、第3図は従来技術によるECLコンパチブル出力回
路の第2の具体例を示す図である。図において204.
206および100はノーマリ71 図 100,204.206: /−71,Itン型MEN
 FET71−2  図 SS
FIG. 1 shows an embodiment of the present invention, FIG. 2 shows a first specific example of an ECL compatible output circuit according to the prior art, and FIG. 3 shows a second specific example of an ECL compatible output circuit according to the prior art. It is a figure which shows an example. In the figure, 204.
206 and 100 are normal 71 Figure 100, 204.206: /-71, It-type MEN
FET71-2 Figure SS

Claims (1)

【特許請求の範囲】[Claims] ゲート端子に入力信号を加えられドレイン端子を第1の
電源に接続された第1のFETと、ゲート端子に基準電
圧を加えられ前記第1のFETのソース端子にソース端
子を接続された第2のFETと、前記第2のFETのド
レイン端子と、前記第1の電源との間に設けられた負荷
抵抗と、前記第2のFETのソース端子と第2の電源と
の間に設けられたソース抵抗とから構成されるSCFL
回路において、前記負荷抵抗の一部もしくは全部に常時
一定の電流を流す手段を更に付加したことを特徴とする
ECLコンパチブル出力回路。
a first FET to which an input signal is applied to the gate terminal and whose drain terminal is connected to a first power supply; and a second FET to which a reference voltage is applied to the gate terminal and whose source terminal is connected to the source terminal of the first FET. FET, a load resistor provided between the drain terminal of the second FET and the first power source, and a load resistor provided between the source terminal of the second FET and the second power source. SCFL consisting of source resistance
An ECL compatible output circuit characterized in that the circuit further includes means for constantly flowing a constant current through part or all of the load resistor.
JP61002451A 1986-01-09 1986-01-09 Ecl compatible output circuit Pending JPS62159914A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61002451A JPS62159914A (en) 1986-01-09 1986-01-09 Ecl compatible output circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61002451A JPS62159914A (en) 1986-01-09 1986-01-09 Ecl compatible output circuit

Publications (1)

Publication Number Publication Date
JPS62159914A true JPS62159914A (en) 1987-07-15

Family

ID=11529645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61002451A Pending JPS62159914A (en) 1986-01-09 1986-01-09 Ecl compatible output circuit

Country Status (1)

Country Link
JP (1) JPS62159914A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102983853A (en) * 2012-11-26 2013-03-20 电子科技大学 Analog squaring circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5911032A (en) * 1982-07-12 1984-01-20 Hitachi Ltd Signal level variation compensating circuit of logical circuit
JPS6068645A (en) * 1983-09-26 1985-04-19 Toshiba Corp Logic circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5911032A (en) * 1982-07-12 1984-01-20 Hitachi Ltd Signal level variation compensating circuit of logical circuit
JPS6068645A (en) * 1983-09-26 1985-04-19 Toshiba Corp Logic circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102983853A (en) * 2012-11-26 2013-03-20 电子科技大学 Analog squaring circuit

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