JPS62146276A - Formation of thin sulfide film - Google Patents

Formation of thin sulfide film

Info

Publication number
JPS62146276A
JPS62146276A JP28607385A JP28607385A JPS62146276A JP S62146276 A JPS62146276 A JP S62146276A JP 28607385 A JP28607385 A JP 28607385A JP 28607385 A JP28607385 A JP 28607385A JP S62146276 A JPS62146276 A JP S62146276A
Authority
JP
Japan
Prior art keywords
thin film
metal
sulfide
forming
organometallic compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28607385A
Other languages
Japanese (ja)
Other versions
JPH0699809B2 (en
Inventor
Yasuto Isozaki
康人 礒崎
Hiroshi Hasegawa
洋 長谷川
Kazuyuki Okano
和之 岡野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP60286073A priority Critical patent/JPH0699809B2/en
Publication of JPS62146276A publication Critical patent/JPS62146276A/en
Publication of JPH0699809B2 publication Critical patent/JPH0699809B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1229—Composition of the substrate
    • C23C18/1245—Inorganic substrates other than metallic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres

Abstract

PURPOSE:To easily form a thin film of sulfide without using a vacuum vessel by forming a layer of an org. metallic comp. having metal-sulfur bonds on a base plate and subjecting the same to thermal cracking in an oxidizing atmosphere. CONSTITUTION:The org. metallic comp. having at least one metal-sulfur bonds in the inside is mixed with and dissolved in a solvent and the soln. is coated on the base plate consisting of alumina, etc.. The coating is dried to evaporate the solvent and is thereafter thermally cracked in the oxidizing atmosphere such as atm. to form the thin film of the metallic sulfide. The film is calcined in an inert atmosphere as necessary. Various metallic mercaptide such as cadmium lauryl mercaptide and various metallic salts such as various thiocarboxylic acids or dithiocarboxylic acids are usable as the above-mentioned org. compd.. The thin film of a large area free from remaining carbon or hydrogen is easily produced by the above-mentioned.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は各種エレクトロニクスデバイスに使用される金
属硫化物薄膜の形成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for forming metal sulfide thin films used in various electronic devices.

従来の技術 従来より硫化亜鉛、硫化カドミウム、硫化鉛、硫化銅等
の金属硫化物は薄膜あるいは結晶等の形でエレクトロニ
クス分野で広く使用されている。BACKGROUND OF THE INVENTION Metal sulfides such as zinc sulfide, cadmium sulfide, lead sulfide, and copper sulfide have been widely used in the electronics field in the form of thin films or crystals.

こｎら化合物の薄膜は、従来はスパッタリング法、蒸着
法、ＣＶＤ法等によって基板上に形成されていた。また
、金属−硫黄結合を少なくとも一内部に有する有機金属
化合物を不活性雰囲気中で熱分解により形成されていた
。Thin films of these compounds have conventionally been formed on substrates by sputtering, vapor deposition, CVD, or the like. Further, it has been formed by thermally decomposing an organometallic compound having at least one internal metal-sulfur bond in an inert atmosphere.

発明が解決しようとする問題点 上記、硫化物薄膜の形成方法は真空容器中で行わわ、る
ために生産性が悪く、連続操業が困難であるか、あるい
は非常に高額の生産設備を必要とする。また、真空容器
の大きさで製品の大きさを規定され、大面積の製造が困
難である等の問題点を有している。Problems to be Solved by the Invention The method for forming a sulfide thin film described above has poor productivity because it is carried out in a vacuum container, making continuous operation difficult or requiring very expensive production equipment. do. In addition, the size of the product is determined by the size of the vacuum container, making it difficult to manufacture a large area.

また、上記熱分解による形成方法では不活性雰囲気中で
熱分解するため、有機分である炭素や水素が薄膜中に残
留し膜が黒色になり、特性が出ない等の問題点を有して
いる。In addition, the formation method using thermal decomposition described above has problems such as thermal decomposition in an inert atmosphere, so organic components such as carbon and hydrogen remain in the thin film, resulting in a black film and poor characteristics. There is.

本発明は真空容器を使用せずに、硫化物薄膜を得ること
を目的とするものである。The object of the present invention is to obtain a sulfide thin film without using a vacuum vessel.

問題点を解決するだめの手段 本発明が上記問題点で解決するための手段は、金属−硫
黄結合を少なくとも一つ内部に有する有機金属化合物層
を基板上に形成した後、酸化雰囲気中で上記有機金属化
合物を熱分解して形成することと、熱分解後不活性雰囲
気中で焼成して形成することである。Means for Solving the Problems The present invention solves the above problems by forming an organometallic compound layer containing at least one metal-sulfur bond on a substrate, and then forming the above-mentioned layer in an oxidizing atmosphere. One is to form by thermally decomposing an organometallic compound, and the other is to form by firing in an inert atmosphere after thermally decomposing.

本発明に使用できる金属−硫黄結合を少なくとも一つ内
部に有する有機金属化合物としては、各種金属メルカプ
チド、各種チオカルボン酸またはジチオカルボン酸の各
種金属塩等を挙げることができる。これらの化合物の合
成方法は公知である。Examples of the organometallic compound having at least one internal metal-sulfur bond that can be used in the present invention include various metal mercaptides, various metal salts of various thiocarboxylic acids or dithiocarboxylic acids, and the like. Methods for synthesizing these compounds are known.

有機金属化合物全形成する基板としては、熱分解温度に
耐えるものであれば任意に選ぶことができる。通常熱分
解温度は３２０〜４５０″Ｃ程度であるため、安価なソ
ーダ石灰ガラス等を十分使用　′できる。The substrate on which the organometallic compound is entirely formed can be arbitrarily selected as long as it can withstand the thermal decomposition temperature. Since the thermal decomposition temperature is usually about 320 to 450''C, inexpensive soda lime glass or the like can be used satisfactorily.

熱分解は大気中や、酸素雰囲気中等の酸化雰囲気中で行
うことにより有機分である、炭素や水素を完全に分解す
ることができる。また、より焼結度を増すために高温に
上げる場合は、酸化雰囲気中では得られた硫化物薄膜が
酸化され、酸化物を含んだ薄膜になるため、熱分解後不
活性雰囲気中で焼成することが有効である。Thermal decomposition can be carried out in the air or in an oxidizing atmosphere such as an oxygen atmosphere to completely decompose organic components such as carbon and hydrogen. In addition, when raising the temperature to a higher temperature to further increase the degree of sintering, the obtained sulfide thin film is oxidized in an oxidizing atmosphere and becomes a thin film containing oxides, so it is necessary to sinter it in an inert atmosphere after thermal decomposition. This is effective.

作　　　用 上記本発明の手段を用いることにより、従来の方法の問
題となっている真空容器を使用せずに硫化物薄膜を形成
できるため、薄膜の製造に関して、生産性の向上が計ら
れ、かつ大面積の製造を容易に行うことができる。また
、薄膜中に炭素や、水素の残留のない硫化物薄膜を形成
することができる０ 実施例 以下実捲例により説明する。Effect: By using the means of the present invention, a sulfide thin film can be formed without using a vacuum container, which is a problem with conventional methods. Large-area manufacturing can be easily performed. Furthermore, it is possible to form a sulfide thin film with no residual carbon or hydrogen in the thin film.Examples The present invention will be explained below using actual winding examples.

（実施例１） カドミウムラウリルメルカプチドをテトラリンに混合、
溶１１＋’Ｊし、アルミナ基板上にスピナーにて塗布し
、１５０′Ｃ″′ｃ乾賑し溶媒を揮散させた後、大気中
にて４５０°Ｃ１１時間熱分解する。この結の無い均一
な硫化カドミウムの薄膜が得ら扛た。(Example 1) Mixing cadmium lauryl mercaptide with tetralin,
The solution was melted at 450°C for 11 hours, coated on an alumina substrate with a spinner, dried at 150°C to volatilize the solvent, and then thermally decomposed in the air at 450°C for 11 hours. A thin film of cadmium sulfide was obtained.

この薄膜を元素分析にかけた結果、硫化カドミウムが生
成していることが確認された。また、膜内に炭素、水素
の残留は認められなかった。When this thin film was subjected to elemental analysis, it was confirmed that cadmium sulfide was produced. Further, no residual carbon or hydrogen was observed within the film.

（実施例２） カドミウムラウリルメルカプチドをテトラリンに混合、
溶解し、アルミナ基板上にスピナーにて塗布し、１５０
’Ｃで乾燥し溶媒を揮散させた後、大気中にて４５０″
Ｃ１３０分熱分解する。その後窒素気流中で７００″Ｃ
１時間焼成する。この結果、膜厚５００〜５０００への
無色〜黄色い亀裂の無い均一な硫化カドミウムの薄膜が
得ら扛た。この薄膜を元素分析にかけた結果、硫化カド
ミウムが生成していることが確認された。また、膜内に
炭素、水素の残留は認められなかった。また、走査型電
子顕微鏡で観察した結果、酸化雰囲気中で熱分解しただ
けの膜に比べ結晶の成長が顕著であった。(Example 2) Mixing cadmium lauryl mercaptide with tetralin,
Melt it and apply it on an alumina substrate with a spinner,
After drying at 'C and volatilizing the solvent, 450'' in the atmosphere.
C Pyrolyze for 130 minutes. Then heated to 70″C in a nitrogen stream.
Bake for 1 hour. As a result, a uniform cadmium sulfide thin film having a thickness of 500 to 5,000 and having no colorless to yellow cracks was obtained. When this thin film was subjected to elemental analysis, it was confirmed that cadmium sulfide was produced. Further, no residual carbon or hydrogen was observed within the film. Furthermore, as a result of observation using a scanning electron microscope, crystal growth was remarkable compared to a film that was only thermally decomposed in an oxidizing atmosphere.

（実施ψ１１３） ｉ■奢ハ　ナク　−６ノしｄｓ＝＝ｚ−ノ　ル七　ブ千
　ト３ブー子　ト　→　ｌｌｙ：、’ｉ’混合、溶解し
、アルミナ基板上にスピナーにて塗布し、１６０°Ｃで
乾燥し溶媒を揮散させた後、大気中にて４６０°Ｃ１１
時間熱分解する。この結果、膜厚５００〜６０Ｑ○人の
ほぼ無色〜白色で亀裂の無い均一な硫化亜鉛の薄膜が得
られた。この薄膜を元素分析にかけた結果、硫化亜鉛が
生成していることが確認された。また、膜内に炭素、水
素の残留は認められなかった。(Implementation ψ113) i ■ Deluxe - 6 ds = = z - Nor 7 → lly:, 'i' Mix, melt and apply on an alumina substrate with a spinner, After drying at 160°C to volatilize the solvent, dry at 460°C11 in the air.
Time pyrolysis. As a result, a uniform thin film of zinc sulfide with a thickness of 500 to 60 Q* and almost colorless to white and without cracks was obtained. When this thin film was subjected to elemental analysis, it was confirmed that zinc sulfide was produced. Further, no residual carbon or hydrogen was observed within the film.

（実施例４） 亜鉛オクチルメルカプチドをテトラリ／に混合。(Example 4) Zinc octyl mercaptide mixed with Tetrali/.

溶解し、アルミナ基板上にスピナーにて塗布し、１６０
°Ｃで乾燥し溶媒を揮散させた後、大気中にて４５０°
Ｃ１３０分熱分解する。その後窒素気流中で７００°Ｃ
１時間焼成する。この結果、膜厚５００〜５０００Ａの
ほぼ無色〜白色で亀裂の無い均一な硫化亜鉛の薄膜が得
らｎだ。この薄膜を元素分析にかけた結果、硫化亜鉛が
生成していることが確認さ扛た。また、膜内に炭素、水
素の残留は認められなかった。また、走査型電子顕微鏡
で観察した結果、酸化雰囲気中で熱分解したたけの膜に
比べ結晶の成長が顕著であった。Melt it and apply it on an alumina substrate with a spinner,
After drying at °C to evaporate the solvent, store at 450 °C in the atmosphere.
C Pyrolyze for 130 minutes. Then at 700°C in a nitrogen stream.
Bake for 1 hour. As a result, a uniform zinc sulfide thin film with a thickness of 500 to 5000 Å, almost colorless to white, and free of cracks was obtained. When this thin film was subjected to elemental analysis, it was confirmed that zinc sulfide was produced. Further, no residual carbon or hydrogen was observed within the film. Furthermore, as a result of observation using a scanning electron microscope, the growth of crystals was more remarkable than that of a bamboo film thermally decomposed in an oxidizing atmosphere.

（実施例６） チオ安息香酸鉛をテトラリンに混合、溶解し、アルミナ
基板上にスピナーにて塗布し、１５０°Ｃで乾燥し溶媒
を揮散させた後、大気中にて４５０°Ｃ１１時間熱分解
する。この結果、膜厚５Ｑ○〜５ｏｏｏ入のほぼ無色で
亀裂の無い均一な硫化鉛の薄膜が得られた。この薄膜を
元素分析にかけた結果、硫化鉛が生成していることが確
認さ扛た。(Example 6) Lead thiobenzoate was mixed and dissolved in tetralin, applied on an alumina substrate with a spinner, dried at 150°C to volatilize the solvent, and then thermally decomposed at 450°C in the air for 11 hours. do. As a result, an almost colorless and uniform lead sulfide thin film with no cracks was obtained with a film thickness of 5Q○ to 5ooo. When this thin film was subjected to elemental analysis, it was confirmed that lead sulfide was produced.

また、膜内に炭素、水素の残留は認めら扛なかった。Further, no residual carbon or hydrogen was observed within the film.

（実施例６） チオ安息香酸鉛をテトラリンに混合、溶解し、アルミナ
基板上にスピナーにて塗布し、１５０°Ｃで乾燥し溶媒
を揮散させた後、大気中にて４５０°Ｃ１３０分熱分解
する。その後窒素気流中で７００’０１時間焼成する。(Example 6) Lead thiobenzoate was mixed and dissolved in tetralin, applied on an alumina substrate with a spinner, dried at 150°C to volatilize the solvent, and then thermally decomposed at 450°C in the air for 130 minutes. do. Thereafter, it is fired for 700'01 hours in a nitrogen stream.

この結果、膜厚５００〜５ｏｏｏ人のほぼ無色でＩＬ裂
の無い均一な硫化鉛の薄膜が得られた。この薄膜を元素
分析にかけた結果、硫化鉛が生成していることが確認さ
れた。As a result, a uniform lead sulfide thin film having a thickness of 500 to 500 mm was obtained, which was almost colorless and had no IL cracks. When this thin film was subjected to elemental analysis, it was confirmed that lead sulfide was produced.

また、膜内に、炭素、水素の残留は認められなかった。Further, no residual carbon or hydrogen was observed within the film.

寸だ、走査型電子顕微鏡で観察した結果、酸化雰囲気中
で熱分解しただけの膜に比べ結晶の成長が顕著であった
。As a result of observation using a scanning electron microscope, the growth of crystals was remarkable compared to a film that was simply thermally decomposed in an oxidizing atmosphere.

発明の効果 以上のように本発明の硫化物薄膜の形成方法は金属−硫
黄結合を少なくとも一つ内部に有する有機金属化合物層
を基板上に形成した後、酸化雰囲気中で上記有機金属化
合物を熱分解して形成することと、熱分解後不活性雰囲
気中で焼成して形成することにより、スパッタリング去
、蒸着法、ＣＶＤ法等に比較して、生産性に優れ、非常
に高額の設備を必要とせず、大面積の製造を容易に行う
ことができる。また、不活性雰囲気中で熱分解するもの
と比較して、炭素や、水素の残留を無くすことができ、
その実用的効果は犬なるものがある。Effects of the Invention As described above, the method for forming a sulfide thin film of the present invention involves forming an organometallic compound layer containing at least one metal-sulfur bond on a substrate, and then heating the organometallic compound in an oxidizing atmosphere. By forming by decomposition and by firing in an inert atmosphere after thermal decomposition, productivity is superior compared to sputtering, vapor deposition, CVD, etc., and requires extremely expensive equipment. Therefore, large-area manufacturing can be easily performed. In addition, compared to those that are thermally decomposed in an inert atmosphere, it is possible to eliminate residual carbon and hydrogen.
Its practical effect is that of a dog.

Claims (8)

【特許請求の範囲】[Claims] （１）金属−硫黄結合を少なくとも一つ内部に有する有
機金属化合物層を基板上に形成し、酸化雰囲気中で上記
有機金属化合物を熱分解して形成することを特徴とする
硫化物薄膜の形成方法。(1) Formation of a sulfide thin film characterized by forming an organometallic compound layer containing at least one metal-sulfur bond on a substrate, and thermally decomposing the organometallic compound in an oxidizing atmosphere. Method. （２）金属−硫黄結合を有する有機金属化合物が金属メ
ルカプチドであることを特徴とする特許請求の範囲第１
項記載の硫化物薄膜の形成方法。(2) Claim 1, characterized in that the organometallic compound having a metal-sulfur bond is a metal mercaptide.
A method for forming a sulfide thin film as described in . （３）金属−硫黄結合を有する有機金属化合物が金属の
チオカルボン酸塩であることを特徴とする特許請求の範
囲第１項記載の硫化物薄膜の形成方法。(3) The method for forming a sulfide thin film according to claim 1, wherein the organometallic compound having a metal-sulfur bond is a metal thiocarboxylate. （４）金属−硫黄結合を有する有機金属化合物が金属の
ジチオカルボン酸塩であることを特徴とする特許請求の
範囲第１項記載の硫化物薄膜の形成方法。(4) The method for forming a sulfide thin film according to claim 1, wherein the organometallic compound having a metal-sulfur bond is a metal dithiocarboxylate. （５）金属−硫黄結合を少なくとも一つ内部に有する有
機金属化合物層を基板上に形成し、酸化雰囲気中で上記
有機金属化合物を熱分解した後、不活性雰囲気中で焼成
して形成することを特徴とする硫化物薄膜の形成方法。(5) Forming an organometallic compound layer having at least one metal-sulfur bond therein on a substrate, thermally decomposing the organometallic compound in an oxidizing atmosphere, and then firing it in an inert atmosphere. A method for forming a sulfide thin film characterized by: （６）金属−硫黄結合を有する有機金属化合物が金属メ
ルカプチドであることを特徴とする特許請求の範囲第５
項記載の硫化物薄膜の形成方法。(6) Claim 5, characterized in that the organometallic compound having a metal-sulfur bond is a metal mercaptide.
A method for forming a sulfide thin film as described in . （７）金属−硫黄結合を有する有機金属化合物が金属の
チオカルボン酸塩であることを特徴とする特許請求の範
囲第５項記載の硫化物薄膜の形成方法。(7) The method for forming a sulfide thin film according to claim 5, wherein the organometallic compound having a metal-sulfur bond is a metal thiocarboxylate. （８）金属−硫黄結合を有する有機金属化合物が金属の
ジチオカルボン酸塩であることを特徴とする特許請求の
範囲第５項記載の硫化物薄膜の形成方法。(8) The method for forming a sulfide thin film according to claim 5, wherein the organometallic compound having a metal-sulfur bond is a metal dithiocarboxylate.
JP60286073A 1985-12-19 1985-12-19 Method for forming sulfide thin film Expired - Fee Related JPH0699809B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4812333A (en) * 1988-05-02 1989-03-14 General Motors Corporation Sulfide thin film formed from stabilized metallo-organic solution
WO1989010326A1 (en) * 1988-04-21 1989-11-02 Matsushita Electric Industrial Co., Ltd. Process for producing thin film of metal sulfide
US6211043B1 (en) 1997-09-05 2001-04-03 Matsushita Battery Industrial Co., Ltd. Method of manufacturing a compound semiconductor thin film on a substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140705A (en) * 1979-04-19 1980-11-04 Exxon Research Engineering Co Formation of metal or mixed metal chalcogenide film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140705A (en) * 1979-04-19 1980-11-04 Exxon Research Engineering Co Formation of metal or mixed metal chalcogenide film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989010326A1 (en) * 1988-04-21 1989-11-02 Matsushita Electric Industrial Co., Ltd. Process for producing thin film of metal sulfide
US4812333A (en) * 1988-05-02 1989-03-14 General Motors Corporation Sulfide thin film formed from stabilized metallo-organic solution
US6211043B1 (en) 1997-09-05 2001-04-03 Matsushita Battery Industrial Co., Ltd. Method of manufacturing a compound semiconductor thin film on a substrate

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