JPS62133717A - X-ray mask and mask aligning apparatus with x-ray mask - Google Patents
X-ray mask and mask aligning apparatus with x-ray maskInfo
- Publication number
- JPS62133717A JPS62133717A JP60273223A JP27322385A JPS62133717A JP S62133717 A JPS62133717 A JP S62133717A JP 60273223 A JP60273223 A JP 60273223A JP 27322385 A JP27322385 A JP 27322385A JP S62133717 A JPS62133717 A JP S62133717A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- ray
- ray mask
- support frame
- rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明はＸ線マスクの微細パターン形成面あるいはマス
クアライナへの装着面を損傷することなく、該Ｘ線マス
クを取扱うことができるＸ線マスクおよびマスクアライ
ナに関する。Detailed Description of the Invention [Field of Application of the Invention] The present invention provides an X-ray mask that can be handled without damaging the fine pattern forming surface of the X-ray mask or the mounting surface to a mask aligner Regarding mask aligners.
従来、例えば、シムクナス、ソリッド・ステート・テク
ノロジー、 １９８４年９月号、第１９２頁（Ａ。Previously, for example, Simkunas, Solid State Technology, September 1984, p. 192 (A.
Ｒ、Ｓｈｉｍｕｋｎａｓ、 ５ｏｌｉｄ ５ｔａｔｅ
Ｔｅｃｈｎｏｌｏｇｙ、 ５ｅｐｔ。R, Shimuknas, 5olid 5tate
Technology, 5ept.
１９８４、 Ｐ、１９２）に示されるようにＸ線マスク
は第２図に示す構造を有しており、これを取扱うにはマ
スク表面２′あるいは支持枠１の表面１′をピンセット
あるいは真空吸着ビンセットで掴んでいた。しかし、こ
のような従来の方式ではＸ線マスク表面２′を損傷する
ため、微細パターン３の欠陥の増大を招いたり、あるい
は異物の付着によりｘｉ＊光におけるマスクとウェハの
ギャップが正確にとれない問題があった。また、支持枠
１の表面１′にも異物付着する場合もあり、この時はマ
スクアライナのマスクステージに固定する際、真空吸着
ができなくなることがあった。1984, P. 192), the X-ray mask has the structure shown in FIG. I was grabbing it as a set. However, such conventional methods damage the X-ray mask surface 2', leading to an increase in defects in the fine pattern 3, or the gap between the mask and the wafer cannot be accurately set in the xi* light due to adhesion of foreign matter. There was a problem. In addition, foreign matter may also adhere to the surface 1' of the support frame 1, and in this case, vacuum suction may not be possible when fixing it to the mask stage of a mask aligner.
本発明の目的は従来問題となっていたＸ線マスり表裏面
取扱いによるＸ線マスクの損傷、異物付着をなくし、欠
陥が少なく、且つ歩留りの高いＸ線リソグラフィ技術を
提供することにある。An object of the present invention is to provide an X-ray lithography technique that eliminates the conventional problems of damage to the X-ray mask due to handling of the front and back sides of the X-ray mask and adhesion of foreign substances, has fewer defects, and has a high yield.
前記目的を達成するために、本発明は、第１図に示すご
とくＸ線マスクの支持枠１の外周端面１″の少なくとも
一部に凸部４を設け、これを利用してＸ線マスクを取扱
うようにしたものである。In order to achieve the above object, the present invention provides a convex portion 4 on at least a portion of the outer peripheral end surface 1'' of the support frame 1 of the X-ray mask, as shown in FIG. This is how it is handled.
以下、実施例により本発明の詳細な説明する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
実施例１
第１図における支持枠１にＳｉウェハを用いることとし
て、第３図に示す製造プロセスにより本発明に実施【ノ
た。同図（ａ）に示すごとく、Ｓｉ単結晶のインゴット
３５の段階で該インゴット３５の外周面に４５°Ｖ溝３
４を磁石研削により形成した后、該インゴット３５ｔｉ
−スライスし２ｍ厚のＳｊウェハ３１を作製した。Example 1 The present invention was carried out by the manufacturing process shown in FIG. 3, using a Si wafer for the support frame 1 shown in FIG. As shown in FIG. 3(a), a 45° V-groove 3 is formed on the outer peripheral surface of the Si single crystal ingot 35.
4 by magnetic grinding, the ingot 35ti
- A 2 m thick Sj wafer 31 was sliced.
該Ｓｉウェハ３１の両面を鏡面研磨したのち、ＢＮ薄膜
３２、Ａｕパターン３３を形成した（第３項（ｂ））そ
の后、同図（ｃ）に示すごとく該Ｓｉウェハの中央部分
を硝酸、フッ酸、氷酢酸混液により溶解除去しＸ線マス
クを作製した。After mirror polishing both sides of the Si wafer 31, a BN thin film 32 and an Au pattern 33 were formed (Section 3 (b)). After that, as shown in FIG. An X-ray mask was prepared by dissolving and removing it with a mixture of hydrofluoric acid and glacial acetic acid.
実施例２
第４図は前記実施例１のＸ線マスクを取扱うマスク搬送
系を実施例を示すものである。支持枠４１の外周端面に
形成した■溝４４より角度の小さい４０のＶ字形突起部
４５′を有するマスク搬送アーム４５を該Ｘ線マスク外
側に挿入し、該マスクを支持して搬送を行った。Embodiment 2 FIG. 4 shows an embodiment of the mask transport system for handling the X-ray mask of Embodiment 1. A mask transfer arm 45 having 40 V-shaped protrusions 45' having a smaller angle than the groove 44 formed on the outer peripheral end surface of the support frame 41 was inserted outside the X-ray mask to support and transfer the mask. .
以上、実施例１，２はシリコンウェハから成る支持枠に
Ｖ溝を形成した例であるが、このシリコンウェハに接着
した支持リングにＶ溝を形成する場合も当然、同様の効
果が得られる。また、■溝の代りにコの字形の凹溝を設
けても、同様の効果が得られる。As mentioned above, Examples 1 and 2 are examples in which a V-groove is formed in a support frame made of a silicon wafer, but the same effect can of course be obtained when a V-groove is formed in a support ring bonded to this silicon wafer. Further, the same effect can be obtained by providing a U-shaped groove in place of the groove.
本発明によれば、Ｘ線マスクの表裏面に損傷。 According to the present invention, the front and back surfaces of the X-ray mask are damaged.
異物付着を与えることがないため、Ｘ線リソグラフィプ
ロセスにおいて高精度なパターン転写が高歩留りで行い
得る。Since there is no adhesion of foreign matter, highly accurate pattern transfer can be performed with high yield in the X-ray lithography process.
なお、前記実施例２では完成したＸ線マスクの搬送に関
して説明したが、本発明の効果はＸ線マスク製造プ緑セ
ス過程でのマスク基板取扱いにおいても類似の効果が得
られることは言うまでもない。In the second embodiment, the description has been made regarding the transportation of a completed X-ray mask, but it goes without saying that similar effects of the present invention can be obtained in the handling of mask substrates during the green process of manufacturing an X-ray mask.
第１図は本発明の基本例を示す図、第２図は従来のＸ線
マスクの構造例を示す図、第３図は本発明に係るＸ線マ
スクの実施例で説明するための図、第４図は本発明によ
り作製したＸ線マスクの搬送方法を示す実施例を説明す
るための図である。
１．２１，３１，４１・・・マスク支持枠またはＳｉウ
ェハ、２，２２，３２，４２・・・メンブレン薄膜、３
．２３，３３，４３・・・Ｘ線吸収パターン、２４゜３
４．４４・・・Ｖ溝、３５・・・Ｓｉ単結晶インゴット
、４５・・・マスク搬送アームをそれぞれ示す。
不 １ 図
不 ２ 図
ｖ ３ 図
（Ｃ／）FIG. 1 is a diagram showing a basic example of the present invention, FIG. 2 is a diagram showing a structural example of a conventional X-ray mask, and FIG. 3 is a diagram for explaining an embodiment of the X-ray mask according to the present invention. FIG. 4 is a diagram for explaining an embodiment showing a method of transporting an X-ray mask manufactured according to the present invention. 1.21, 31, 41...Mask support frame or Si wafer, 2,22,32,42...Membrane thin film, 3
．． 23,33,43...X-ray absorption pattern, 24°3
4.44...V groove, 35...Si single crystal ingot, 45...mask transfer arm, respectively. Not 1 Not shown 2 Not shown 2 Not shown 3 Not shown (C/)
Claims (1)
とＸ線を透過し易い材料から成るメンブレントと該メン
ブレンを支持する支持枠とから成るＸ線マスクにおいて
、該支持枠の外周端面の少なくとも一部に凹部を有する
ことを特徴とするＸ線マスク。 ２、少なくともＸ線を吸収し易い材料から成るパターン
と、Ｘ線を透過し易い材料から成るメンブレンと該メン
ブレンを支持する支持枠とから成るＸ線マスクの該支持
枠の外周端面の凹部を用いて、該Ｘ線マスクの搬送ある
いは固定する機構を有するマスクアライナ装置。[Claims] 1. An X-ray mask comprising at least a pattern made of a material that easily absorbs X-rays, a membrane made of a material that easily transmits X-rays, and a support frame that supports the membrane; An X-ray mask having a concave portion in at least a portion of an outer peripheral end surface of the X-ray mask. 2. Using a recess in the outer peripheral end surface of the support frame of an X-ray mask consisting of a pattern made of a material that easily absorbs at least X-rays, a membrane made of a material that easily transmits X-rays, and a support frame that supports the membrane. and a mask aligner device having a mechanism for transporting or fixing the X-ray mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60273223A JPS62133717A (en) | 1985-12-06 | 1985-12-06 | X-ray mask and mask aligning apparatus with x-ray mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60273223A JPS62133717A (en) | 1985-12-06 | 1985-12-06 | X-ray mask and mask aligning apparatus with x-ray mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62133717A true JPS62133717A (en) | 1987-06-16 |
Family
ID=17524824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60273223A Pending JPS62133717A (en) | 1985-12-06 | 1985-12-06 | X-ray mask and mask aligning apparatus with x-ray mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62133717A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0242711A (en) * | 1988-04-18 | 1990-02-13 | Canon Inc | Structure of lithography mask |
| DE102014109046A1 (en) * | 2014-06-27 | 2015-12-31 | Von Ardenne Gmbh | Transfer lithography mask and transfer lithography equipment |
-
1985
- 1985-12-06 JP JP60273223A patent/JPS62133717A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0242711A (en) * | 1988-04-18 | 1990-02-13 | Canon Inc | Structure of lithography mask |
| DE102014109046A1 (en) * | 2014-06-27 | 2015-12-31 | Von Ardenne Gmbh | Transfer lithography mask and transfer lithography equipment |
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