JPS60251620A - X-ray mask - Google Patents
X-ray maskInfo
- Publication number
- JPS60251620A JPS60251620A JP59107583A JP10758384A JPS60251620A JP S60251620 A JPS60251620 A JP S60251620A JP 59107583 A JP59107583 A JP 59107583A JP 10758384 A JP10758384 A JP 10758384A JP S60251620 A JPS60251620 A JP S60251620A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- support frame
- pattern
- mask
- ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 6
- 150000004044 tetrasaccharides Chemical class 0.000 claims 1
- 239000012780 transparent material Substances 0.000 claims 1
- 239000000428 dust Substances 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000010408 film Substances 0.000 abstract description 4
- 238000001312 dry etching Methods 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000001015 X-ray lithography Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 235000010893 Bischofia javanica Nutrition 0.000 description 1
- 240000005220 Bischofia javanica Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、軟X線照射により半導体基板上にパターンを
形成するX線リングラフィ法において用いられるX線マ
スクの構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to the structure of an X-ray mask used in an X-ray phosphorography method for forming a pattern on a semiconductor substrate by irradiating soft X-rays.
X線マスクの基本構造は、第1図に示すように、X線に
対して透過性の高い材料で作られた薄膜2の面上に、転
写すべき形状に対応した形状を有するパターン3をX線
透過性の低い材料で形成し、この薄膜2をその周辺部に
おいてリング状の支持枠1で固定状に支持するものであ
る。As shown in Figure 1, the basic structure of an X-ray mask is that a pattern 3 having a shape corresponding to the shape to be transferred is placed on the surface of a thin film 2 made of a material highly transparent to X-rays. The thin film 2 is made of a material with low X-ray transparency and is fixedly supported by a ring-shaped support frame 1 around the thin film 2.
このような構成のX線マスクを用いX線リングラフィに
より半導体基板面上のレジスト層にパターン転写する方
法の概略を第2図により説明する。A method of transferring a pattern to a resist layer on a semiconductor substrate surface by X-ray phosphorography using an X-ray mask having such a configuration will be outlined with reference to FIG.
第2図において、23は第1図で説明した構造のX線マ
スクであり、24は支持枠、25は薄膜、26はパター
ンをそれぞれ示し、このX線マスク23がX線露光装置
に具備されるマスクホルダ22に一体的に装着されてお
り、xi源21より生じたX線21′がX線マスク23
を照射する。このX線21′は薄膜25を透過して下方
にあるS1ウエハ27(一般には試料基板)の上面に塗
布したレジスト層28を感光させる。ここで、X線透過
性の悪い材料から成るノ<ターン26に照射したX線2
1′ はレジスト層28にはほとんど到達しないため、
所定のパターンがレジスト層28に転写されることにな
る。In FIG. 2, 23 is an X-ray mask having the structure explained in FIG. 1, 24 is a support frame, 25 is a thin film, and 26 is a pattern, and this X-ray mask 23 is installed in an X-ray exposure device. The X-ray mask 23 is integrally attached to the mask holder 22, and the
irradiate. The X-rays 21' pass through the thin film 25 and expose a resist layer 28 coated on the upper surface of the S1 wafer 27 (generally a sample substrate) located below. Here, the X-ray 2 irradiated onto the turn 26 made of material with poor X-ray transparency.
1' hardly reaches the resist layer 28, so
A predetermined pattern will be transferred to the resist layer 28.
X線マスク23の支持枠24は厚いためX線21′は透
過せず、前記パターン転写には寄与しない。従って、支
持枠24のウェハ対向面の形状は任意で、薄膜25を支
持し、かつ、転写すべきパターン領域以外に照射される
X線を遮へいする機能さえあればよい。Since the support frame 24 of the X-ray mask 23 is thick, the X-rays 21' do not pass therethrough and do not contribute to the pattern transfer. Therefore, the shape of the wafer-facing surface of the support frame 24 is arbitrary, as long as it supports the thin film 25 and shields the X-rays irradiated to areas other than the pattern area to be transferred.
しかしながら、上記従来構造には次のような問題があっ
た。即ち、X線リソグラフィ法によりパターン転写を行
なう場合には、X線マスクとパターン転写されるレジス
ト層との間隙を、正確かつ精度のよいパターン転写とす
るために、50μm以下と極めて狭くする必要があるが
、従来構造では、X線マスクとウェハとが近接する領域
がパターン領域より広いため、X線マスクの下面への塵
埃の付着や、X線マスク取扱い中に生じた突起状の傷等
が生じ易く、それにより、上記間隙の精度が悪化したリ
ウェハ表面に傷を付けやすく、高精度のパターン転写が
歩留りよくできないという問題があった。このX線マス
クへの塵埃付着や傷発生は、主に、X線マスクの作製プ
ロセス中、あるいは完成したX線マスクの取扱い中に、
このX線マスクの周辺部にピンセットや治具等の取扱い
工具が触れることによって生ずるものが多いことが判っ
た。However, the above conventional structure has the following problems. That is, when pattern transfer is performed by X-ray lithography, the gap between the X-ray mask and the resist layer to which the pattern is transferred needs to be extremely narrow, 50 μm or less, in order to achieve accurate and precise pattern transfer. However, in the conventional structure, the area where the X-ray mask and wafer are close to each other is wider than the pattern area, which causes problems such as dust adhesion to the underside of the X-ray mask and protruding scratches that occur during handling of the X-ray mask. As a result, the accuracy of the gap is likely to deteriorate and the surface of the rewafer is likely to be damaged, resulting in a problem that high-precision pattern transfer cannot be performed at a high yield. Dust adhesion and scratches on the X-ray mask are mainly caused during the manufacturing process of the X-ray mask or during handling of the completed X-ray mask.
It has been found that many of these problems occur when handling tools such as tweezers or jigs come into contact with the periphery of the X-ray mask.
本発明の目的は、従来技術での上記した問題を解決し、
X線マスクの作製プロセス中や完成したxgマスクの取
扱い中に薄膜面あるいはパターン面に塵埃が付着したり
傷が発生するのを防止し、これにより、高精度、高歩留
りのX線リソグラフィを実現することを可能とする構成
を備えたX線マスクを提供することにある。The purpose of the present invention is to solve the above-mentioned problems in the prior art,
Prevents dust from adhering to or scratching the thin film or pattern surface during the X-ray mask manufacturing process or when handling the completed XG mask, thereby realizing high-precision, high-yield X-ray lithography. An object of the present invention is to provide an X-ray mask having a configuration that allows the above-mentioned functions.
本発明の特徴は、上記目的を達成するために、X線マス
クを形成する薄膜のパターンを形成した領域の外径より
大きい外径を有する支持枠とし、この支持枠の上記薄膜
のパターン形成領域の外径より外方に位置する外縁部の
少なくとも一部すなわちX線マスクのウェハと接近する
必要がない部分2′および2“ (第1図)に、試料基
板面までの空隙長が、前記薄膜のパターン形成面と試料
基板(ウェハ)面との間の空隙長よりも段差状に大きく
なる段差部を設ける構成とするにある。In order to achieve the above object, the present invention is characterized by providing a support frame having an outer diameter larger than the outer diameter of a region in which a pattern of a thin film forming an X-ray mask is formed; At least a part of the outer edge located outward from the outer diameter of the X-ray mask, that is, a part 2' and 2'' (FIG. 1) that does not need to come close to the wafer of the X-ray mask, has a gap length up to the sample substrate surface. The structure is such that a stepped portion is provided which is larger than the gap length between the pattern-forming surface of the thin film and the sample substrate (wafer) surface.
本発明の一実施例を、第3図に示す断面図により説明す
る。第3図において、33は薄膜35に形成されたパタ
ーン、34は薄膜35をその周辺部において支持するリ
ング状の支持枠、36はマスク表面、37は支持枠34
に設けられる段差部の段差面、38は支持枠34の裏面
をそれぞれ示す。支持枠34の外径は薄膜35の外径よ
り大きく作られ、この支持枠34の薄膜外径より外方に
位置する外縁部に、図示しないSiウェハのレジスト層
までの空隙長が、マスク表面36とレジスト層との間の
空隙長よりも段差状に大きくなる段差部37が設けられ
る。An embodiment of the present invention will be described with reference to a sectional view shown in FIG. In FIG. 3, 33 is a pattern formed on the thin film 35, 34 is a ring-shaped support frame that supports the thin film 35 at its periphery, 36 is a mask surface, and 37 is a support frame 34.
Reference numeral 38 indicates the back surface of the support frame 34, respectively. The outer diameter of the support frame 34 is made larger than the outer diameter of the thin film 35, and at the outer edge of the support frame 34 located outward from the thin film outer diameter, a gap length up to a resist layer of a Si wafer (not shown) is formed on the mask surface. A step portion 37 is provided which is larger than the gap length between the resist layer 36 and the resist layer.
このような構成とすることにより、X線マスクの作製プ
ロセス中あるいはX線マスク完成後の搬送時などの取扱
いは、この段差部37の底面と支持枠裏面38との間を
ピンセット等の取扱い工具で挟むことで取扱うことが可
能となり、これにより、薄膜面やパターン面にピンセッ
ト等の工具が接触することがなくなり、これらの面への
塵埃付着や傷発生を大幅に低減させることができる。With this configuration, when handling the X-ray mask during the manufacturing process or when transporting the X-ray mask after completion, use a handling tool such as tweezers between the bottom surface of the stepped portion 37 and the back surface 38 of the support frame. This allows tools such as tweezers to not come into contact with the thin film surface or pattern surface, and it is possible to significantly reduce dust adhesion and scratches on these surfaces.
第4図は本発明の一実施例でX線マスクの製作工程の概
略を示したものである。まず、■に示すように、外径D
□が50m、厚さTが500声の円板状のSiウェハ4
1の外周面に、図示の直径D2が40mmとなり、tが
200陣となる段差面43を研削してマスク基板を作製
する。次に■において、厚さが4pmのX線透過膜44
を、BN、SiO2、Si3N3等のいずれか一つを材
料として高周波スパッタリング法により形成した後、さ
らに、厚さ1pmのAu膜を真空蒸着法により被着し、
これをドライエッチング法により所定の形状のAuパタ
ーン45を形成する。次に■に示すように、治具46上
にマスク基板41を裏返しにして置き、マスク基板裏面
に耐酸性薄膜47を高周波スパッタリング法により被着
した後、ドライエツチング法により中央部の耐酸性薄膜
を除去する。次に■に示すように、マスク基板41を、
Auパターン45を下側にして治具48に固定し、これ
を、フッ酸、硝酸、リン酸の混液からなるSiエツチン
グ液49に浸漬して、耐酸性薄膜47をマスクとしてマ
スク基板41の中央部のSiを除去する。FIG. 4 schematically shows the manufacturing process of an X-ray mask according to an embodiment of the present invention. First, as shown in ■, the outer diameter D
Disc-shaped Si wafer 4 with □ of 50 m and thickness T of 500 tones
A mask substrate is manufactured by grinding a stepped surface 43 having a diameter D2 of 40 mm and a t of 200 on the outer circumferential surface of the mask substrate 1. Next, in (■), an X-ray transparent film 44 with a thickness of 4 pm
was formed by high frequency sputtering using one of BN, SiO2, Si3N3, etc. as a material, and then an Au film with a thickness of 1 pm was further deposited by vacuum evaporation,
This is subjected to dry etching to form an Au pattern 45 in a predetermined shape. Next, as shown in (2), the mask substrate 41 is placed upside down on a jig 46, and an acid-resistant thin film 47 is deposited on the back surface of the mask substrate by high-frequency sputtering. remove. Next, as shown in ■, the mask substrate 41 is
The Au pattern 45 is fixed to a jig 48 with the lower side, and this is immersed in a Si etching solution 49 made of a mixture of hydrofluoric acid, nitric acid, and phosphoric acid, and the center of the mask substrate 41 is etched using the acid-resistant thin film 47 as a mask. Remove Si from the parts.
上記工程の中で、マスク基板41に段差面43を設けた
ことにより、薄膜44、Auパターン45が治具46.
48に接触することがなく、パターン欠陥の少ないX線
マスクを高歩留りで作製することができるようになる・
なお、上記第4図実施例では、段差面43をマスク基板
41の外周部を研削することによって形成したが、同様
の段差面は、第1図に示した従来の支持枠1を第1支持
枠とし、この第1支持枠の外径よりも径の大きい第2支
持枠とし、これらの第1支持枠と第2支持枠とを一体的
に接着することによっても得られる。この構成によれば
、第4図の場合に比べてより簡易な製作工程で本発明の
X線マスクが得られる利点がある。In the above steps, by providing the step surface 43 on the mask substrate 41, the thin film 44 and the Au pattern 45 are formed on the jig 46.
48, making it possible to produce an X-ray mask with fewer pattern defects at a high yield. In the embodiment shown in FIG. However, a similar step surface is formed by using the conventional support frame 1 shown in FIG. It can also be obtained by bonding these first support frame and second support frame together. This configuration has the advantage that the X-ray mask of the present invention can be obtained through a simpler manufacturing process than the case shown in FIG.
さらに、上記実施例によれば、いずれの製作工程による
場合も、段差部の底面は、正確な平坦面となる。段差部
の底面が正確な平坦面となることは、マスク表面36と
レジスト面との間の空隙長を、段差部の底面とレジスト
面との間の空隙長で規制できることになり有利である。Further, according to the above embodiment, the bottom surface of the stepped portion becomes an accurately flat surface regardless of the manufacturing process. It is advantageous for the bottom surface of the stepped portion to be a precisely flat surface because the gap length between the mask surface 36 and the resist surface can be regulated by the gap length between the bottom surface of the stepped portion and the resist surface.
しかし、本発明はこれに限定されず、平坦な底面を持つ
段差部を支持枠の外周を−まわりするように設けること
は必ずしも必要ではなく、支持枠の外縁部の複数個所に
、任意の断面形状を持つ段差部を設ける構成としても、
本発明の目的は達成される。However, the present invention is not limited to this, and it is not necessarily necessary to provide a step portion having a flat bottom surface so as to go around the outer periphery of the support frame. Even as a configuration with a stepped portion having a shape,
The objectives of the invention are achieved.
以上説明したように1本発明によれば、X線マスクに付
着する塵埃等によるマスクとウェハ間の間隙精度の劣化
がなくなりパターン転写劣化や転写パターン欠陥が大幅
に低減でき、高精度パターン転写が高歩留りで可能とな
り、さらに、マスク製作プロセスでのマスクの取扱いが
容易になることから、マスク作製の歩留りも向上する。As explained above, according to the present invention, the deterioration of the gap accuracy between the mask and the wafer due to dust adhering to the X-ray mask can be eliminated, pattern transfer deterioration and transferred pattern defects can be significantly reduced, and high-precision pattern transfer can be achieved. This is possible with a high yield, and furthermore, since the mask becomes easier to handle in the mask manufacturing process, the yield of mask manufacturing also improves.
第1図は従来のX線マスクの断面図、第2図はX線リソ
グラフィによるパターン転写の一般説明図、第3図は本
発明の一実施例を示す断面図、第4図は本発明における
X線マスクの作製工程の一例を説明する断面図である。
符号の説明
1.24.34・・支持枠 2.25.35.44・・
薄膜2′、2“・・・X線マスクの試料基板に接近させ
たくない部分
3.26.33.45・・パターン
21・・・X線源 22・・・マスクホルダ23・・X
線マスク
27・・・Siウェハ(試料基板)
28・・・レジスト層 36・・・マスク表面37.4
3・・・段差面 38・・・支持枠裏面46.48・・
治具 47・・・耐酸性薄膜49・・・エツチング液
代理人弁理士 中村 純之助
矛1図
(b)
矛2図
f
′8P3図
第4図
第1頁の続き
@発明者 大鉢 香化 国分寺市東3
央研究所内FIG. 1 is a cross-sectional view of a conventional X-ray mask, FIG. 2 is a general explanatory diagram of pattern transfer by X-ray lithography, FIG. 3 is a cross-sectional view showing an embodiment of the present invention, and FIG. FIG. 3 is a cross-sectional view illustrating an example of an X-ray mask manufacturing process. Explanation of symbols 1.24.34...Support frame 2.25.35.44...
Thin film 2', 2''... Portions of the X-ray mask that should not be brought close to the sample substrate 3.26.33.45... Pattern 21... X-ray source 22... Mask holder 23...
Line mask 27...Si wafer (sample substrate) 28...Resist layer 36...Mask surface 37.4
3...Step surface 38...Back surface of support frame 46.48...
Jig 47... Acid-resistant thin film 49... Etching liquid Agent Junnosuke Nakamura Figure 1 (b) Figure 2 f '8P3 Figure 4 Continued from page 1 @ Inventor Koka Ohachi Kokubunji Ichihigashi 3 Central Research Institute
Claims (2)
料基板面に転写しようとするパターンをX線透過性の低
い材料で形成し、この薄膜をその周辺部においてリング
状の支持枠で支持する構成のX線マスクにおいて、上記
支持枠は上記薄膜の前記パターンが形成された領域の外
径より大きい外径に作られ、その薄膜外径より外方に位
置する外縁部の少なくとも一部に、上記薄膜のパターン
形成面に対して凹なる部分を備えたことを特徴とするX
線マスク。(1)X)! The pattern to be transferred onto the sample substrate surface is formed on a thin film made of a highly transparent material using a material with low X-ray transparency, and this thin film is supported by a ring-shaped support frame around the thin film. In the X-ray mask, the support frame is made to have an outer diameter larger than the outer diameter of the region of the thin film where the pattern is formed, and the thin film is attached to at least a part of the outer edge located outside the thin film outer diameter. X characterized by having a concave portion with respect to the pattern forming surface of
line mask.
域の外径より大きいリング状の板よりなる第1支持枠と
、内径が上記第1支持枠の内径にほぼ等しく外径が上記
第1支持枠より大きいリング状の板より成4糖2支持枠
とを一体的に接着して成る支持枠であることを特徴とす
る特許請求の範囲第1項記載のX線マスク。(2) The support frame includes a first support frame formed of a ring-shaped plate whose inner diameter is larger than the outer diameter of the pattern forming area of the thin film, and a first support frame whose inner diameter is approximately equal to the inner diameter of the first support frame and whose outer diameter is approximately equal to the inner diameter of the first support frame. 2. The X-ray mask according to claim 1, wherein the support frame is formed by integrally adhering two tetrasaccharide support frames from a ring-shaped plate larger than one support frame.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59107583A JPS60251620A (en) | 1984-05-29 | 1984-05-29 | X-ray mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59107583A JPS60251620A (en) | 1984-05-29 | 1984-05-29 | X-ray mask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60251620A true JPS60251620A (en) | 1985-12-12 |
Family
ID=14462839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59107583A Pending JPS60251620A (en) | 1984-05-29 | 1984-05-29 | X-ray mask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60251620A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6249623A (en) * | 1985-07-19 | 1987-03-04 | Nec Corp | X-ray exposure mask |
JPH0217627A (en) * | 1988-07-06 | 1990-01-22 | Fujitsu Ltd | X-ray aligner |
JPH02202011A (en) * | 1989-01-31 | 1990-08-10 | Yamaha Corp | Mask material for x-ray lithography |
US6317480B1 (en) | 1998-04-24 | 2001-11-13 | Hoya Corporation | Method of manufacturing X-ray mask and X-ray mask blank, and X-ray mask and X-ray mask blank manufactured thereby |
-
1984
- 1984-05-29 JP JP59107583A patent/JPS60251620A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6249623A (en) * | 1985-07-19 | 1987-03-04 | Nec Corp | X-ray exposure mask |
JPH0217627A (en) * | 1988-07-06 | 1990-01-22 | Fujitsu Ltd | X-ray aligner |
JPH02202011A (en) * | 1989-01-31 | 1990-08-10 | Yamaha Corp | Mask material for x-ray lithography |
US6317480B1 (en) | 1998-04-24 | 2001-11-13 | Hoya Corporation | Method of manufacturing X-ray mask and X-ray mask blank, and X-ray mask and X-ray mask blank manufactured thereby |
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