JPS62204534A - Reactive ion etching method - Google Patents
Reactive ion etching methodInfo
- Publication number
- JPS62204534A JPS62204534A JP4757386A JP4757386A JPS62204534A JP S62204534 A JPS62204534 A JP S62204534A JP 4757386 A JP4757386 A JP 4757386A JP 4757386 A JP4757386 A JP 4757386A JP S62204534 A JPS62204534 A JP S62204534A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gas
- hole
- closed
- nitrogen gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 12
- 238000001020 plasma etching Methods 0.000 title claims description 11
- 238000005530 etching Methods 0.000 claims abstract description 57
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000007789 gas Substances 0.000 claims abstract description 19
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 abstract description 11
- 229910021344 molybdenum silicide Inorganic materials 0.000 abstract description 11
- 239000011737 fluorine Substances 0.000 abstract description 8
- 229910052731 fluorine Inorganic materials 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- 239000007795 chemical reaction product Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- GLGNXYJARSMNGJ-VKTIVEEGSA-N (1s,2s,3r,4r)-3-[[5-chloro-2-[(1-ethyl-6-methoxy-2-oxo-4,5-dihydro-3h-1-benzazepin-7-yl)amino]pyrimidin-4-yl]amino]bicyclo[2.2.1]hept-5-ene-2-carboxamide Chemical compound CCN1C(=O)CCCC2=C(OC)C(NC=3N=C(C(=CN=3)Cl)N[C@H]3[C@H]([C@@]4([H])C[C@@]3(C=C4)[H])C(N)=O)=CC=C21 GLGNXYJARSMNGJ-VKTIVEEGSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229940125758 compound 15 Drugs 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は反応性ガスを用いて半導体基板上のモリブデン
シリサイド膜のエツチングを行なう反応性イオンエツチ
ング方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a reactive ion etching method for etching a molybdenum silicide film on a semiconductor substrate using a reactive gas.
半導体装置の高集積化に伴って、微細パターンを加工精
度良く形成するために、平行平板電極を用いた反応性イ
オンエツチング法が用いられている。As semiconductor devices become more highly integrated, reactive ion etching using parallel plate electrodes is being used to form fine patterns with high processing accuracy.
第３図はＣの反応性イオンエツチング法ｌ実施する従来
のエツチング装置を模式的に示したものである。FIG. 3 schematically shows a conventional etching apparatus for carrying out the C reactive ion etching method.
エツチング室ｌ内に一対の平行平板電極２，３を配置し
、その一方の電極３上に被エツチング物４を載置するよ
うに構成されており、ガス導入孔１ａから反応ガスをエ
ツチング室１内に導入すると共に、排気孔１ｂから排気
しこの状態で上記電極２，３間に高周波電源５を用いて
高周波電圧を印加して放電を起させ、プラズマを発生さ
せて、ウェハー４？：エツチングするよ５にしている。A pair of parallel plate electrodes 2 and 3 are arranged in the etching chamber 1, and the object to be etched 4 is placed on one of the electrodes 3. A reaction gas is introduced into the etching chamber 1 from the gas introduction hole 1a. In this state, a high frequency voltage is applied between the electrodes 2 and 3 using the high frequency power supply 5 to generate a discharge and generate plasma, and the wafer 4? : I'm going to do etching, so I'm giving it a 5.
この様な反応性イオンエ、ツチング装置で半導体基板上
のモリブデンシリサイド膜をエツチングする場合、反応
性ガスとしてはフッ素系のガスが一般に用い５れ、連続
的にエツチングが行なわれていた。When etching a molybdenum silicide film on a semiconductor substrate using such a reactive ion etching device, a fluorine-based gas is generally used as the reactive gas, and etching is performed continuously.
ところが上述した従来のエツチング装置を用いる際１反
応生成物であるモリブデンとフッ素との化合物が、エツ
チング中にエツチング室の側壁などに付着する。この反
応生成物はエツチング後にもとつキルず１次のエツチン
グ時に再スパツタされ、被エツチング物などに付着する
ので、エツチングの再現性が悪くなるという欠点がある
。However, when using the above-mentioned conventional etching apparatus, a compound of molybdenum and fluorine, which is a reaction product, adheres to the side walls of the etching chamber during etching. This reaction product is re-sputtered during the first etching of the original kill glass after etching and adheres to the object to be etched, resulting in poor etching reproducibility.
第４図ｔａ）〜（Ｃ）は、反応性ガスとしてフッ素のガ
スを用い、半導体基板上のモリブデンシリサイド膜をエ
ツチングした場合のエツチング状況を、エツチング経過
別に示した工程断面図である。FIGS. 4(a) to 4(c) are process cross-sectional views showing the etching progress of a molybdenum silicide film on a semiconductor substrate using fluorine gas as a reactive gas.
第４図（ａ）にｇいて、半導体基板１０上にはゲート酸
化膜を含むシリコン酸化膜１１．及び導体としてのモリ
ブデンシリサイド膜１２がスパッタ法等により形成され
ている。また、１３はモリブデンシリサイド膜１２をエ
ツチングするためのホトレジストのマスクである。In FIG. 4(a), a silicon oxide film 11 including a gate oxide film is formed on a semiconductor substrate 10. A molybdenum silicide film 12 as a conductor is formed by sputtering or the like. Further, 13 is a photoresist mask for etching the molybdenum silicide film 12.
第４図（ｂ）は反応性エツチングガス１４により被エツ
チング物質であるモリブデンシリサイド膜１２が表面よ
りエツチングされていることを示し。FIG. 4(b) shows that the surface of the molybdenum silicide film 12, which is the material to be etched, is etched by the reactive etching gas 14.
破線人はエツチングの時間経過による進行状況を示して
いる。この際、エツチング壁に付着していた％ ＩＪプ
デンとフッ素との化合物１５がエツチング中に再スパツ
タされて、被エツチング物１２の上に付着する。このた
め、第４図（Ｃ）のよ５に、本来マスク１３の下部のみ
に被エツチング物が残されるべ＠ものが、反応生成物１
５がマスクとなって、その下部にも被エツチング物が残
されてし゛まう。この反応生成物１５をエツチングで取
り除くには多大の時間を要し、半導体装用製造に無駄な
時間を費や丁ばかりでなく、エツチング形状Ｉ４悪くな
り、エツチングの再現性悪化の原因になってしま５ので
ある。The broken lines indicate the progress of etching over time. At this time, the compound 15 of % IJ powder and fluorine that had adhered to the etching wall is sputtered again during etching and adheres to the object 12 to be etched. Therefore, as shown in FIG. 4(C), the material to be etched should originally remain only in the lower part of the mask 13, but the reaction product 1
5 becomes a mask, and the object to be etched is left behind as well. It takes a lot of time to remove this reaction product 15 by etching, which not only wastes time and damages the semiconductor device manufacturing process, but also deteriorates the etched shape I4, causing deterioration of etching reproducibility. It is 5.
本発：月の反応性イオンエツチング方法は、互いに対向
して配置され高周波電力が印加さルる平行板電極を備え
反応性ガスを導入して上記電極間にプラズマを発生させ
上記′１極の一方の電極上に載置された半導体基板上の
モリブデンシリサイド膜ｔエツチングする反応性イオン
エツチング方法にＲいて、エツチングのをエツチングす
る反応性イオンエツチング方法にズｄいて、エツチング
の前後に窒素ガスによる洗浄を行うことを・特徴とする
。The present invention: The moon's reactive ion etching method includes parallel plate electrodes arranged opposite to each other and to which high-frequency power is applied, and a reactive gas is introduced to generate plasma between the electrodes. The molybdenum silicide film on the semiconductor substrate placed on one of the electrodes is etched using a reactive ion etching method. It is characterized by cleaning.
次に本発明の実施例１図面を用いて説明する。 Next, a first embodiment of the present invention will be explained using the drawings.
第１図は本発明の一実穐例を説明するためのエツチング
装置な模式的に示したものであり、乾燥窒素ボンベ６、
窒素ガス導入孔ＩＣ？：取り付けたこと以外は＠３図の
装なとほぼ同じである。又。FIG. 1 schematically shows an etching device for explaining an example of the present invention, in which a dry nitrogen cylinder 6,
Nitrogen gas introduction hole IC? : Other than the installation, it is almost the same as the outfit shown in Figure @3. or.
第２図（ａ）〜（（Ｊは、第１図のエツチング装置を用
いて大気洗浄を行った後の、エツチング経過を示す工程
断面図である。FIGS. 2A to 2J are cross-sectional views showing the progress of etching after atmospheric cleaning using the etching apparatus shown in FIG. 1.
フッ素を含む反応性ガスな用いて、エツチングウェハー
上のモリブデンシリサイド膜をエツチングした後、エツ
チングガス導入孔１ａを閉じ、全ウェハーを回収する。After etching the molybdenum silicide film on the etching wafer using a reactive gas containing fluorine, the etching gas introduction hole 1a is closed and all the wafers are recovered.
その後、第１図にｊ６いて、排気孔ＩＩ）のパルプを閉
じる。閉じた後もエツチング室内はかなりの高真空に保
たｆしている。ここで、ガス導入孔１ｃｙ−気に全開に
し、１ｃより圧縮された乾燥窒素ガスを導入する。この
際、高真空のエツチング室内に、圧縮さｎた窒素が導入
される為、エツチング壁にかなりの圧力でΔ素が噴射さ
れ、壁に付着していた物質が吹き飛ばされる。一定時間
窒素ガスを流した後、排気孔１ｂを開き、窒素ガス、及
び吹き飛ばされた付層物等を回収する。その後、窒素ガ
ス導入孔１ｃＹ閉じ。Thereafter, at j6 in FIG. 1, the pulp of the exhaust hole II) is closed. Even after closing, the etching chamber is kept at a fairly high vacuum. Here, the gas introduction hole 1cy is fully opened and compressed dry nitrogen gas is introduced through the gas introduction hole 1c. At this time, since compressed nitrogen is introduced into the high vacuum etching chamber, Δ element is injected at a considerable pressure onto the etching wall, and the substances adhering to the wall are blown away. After flowing nitrogen gas for a certain period of time, the exhaust hole 1b is opened, and the nitrogen gas and the blown-off attached materials are collected. After that, close the nitrogen gas introduction hole 1cY.
エツチング室内を元の圧力まで排気する。Evacuate the etching chamber to the original pressure.
以上の洗浄工程ｔａた後の、エツチングウェハーのエツ
チング状況を示したのが第２図（ａｔ〜ｔｅｌである。FIG. 2 (at to tel) shows the etching state of the etched wafer after the above cleaning process ta.
、この場合には先の洗浄工程によって、第２図（ｂ）で
示したように１反応生成物が被エツチング物の表面上に
付層することがない。よって被エツチング物１２Ｙホト
レジストマスク１３の下部以外は均一にエツチングする
ことができる。この際。In this case, the previous cleaning step prevents a reaction product from forming a layer on the surface of the object to be etched, as shown in FIG. 2(b). Therefore, the object to be etched 12Y can be etched uniformly except for the lower part of the photoresist mask 13. On this occasion.
フッ素系ガスによるモリブデンシリサイド膜のエツチン
グは垂直方向だけでなく、わずかな割合で水平方向にも
進行する。又、ゲート醸化膜が現れた後も、水平方向に
エツチングが進行するため、オーバーエツチングの制御
によって第２図（Ｃ１に示すような、良好なエツチング
形状が得らｎる。Etching of the molybdenum silicide film by fluorine-based gas proceeds not only in the vertical direction but also in the horizontal direction to a small extent. Furthermore, since etching continues in the horizontal direction even after the gate-enhancing film appears, a good etching shape as shown in FIG. 2 (C1) can be obtained by controlling over-etching.
以上、エツチング工程と、窒素洗浄工程とを繰り返し行
うことにより、第２図（Ｃ）に示したような良好な形状
のエツチングを、再現性良く行うことができる。By repeating the etching process and the nitrogen cleaning process as described above, it is possible to etch a good shape as shown in FIG. 2(C) with good reproducibility.
以上説明したように５本発明によれば、エツチング室内
に付着するエツチング残留物を窒素ガスによって吹きと
ば丁ことにより、エツチング室内の環境な常に一定の状
態に保ち、再現性のあるエツチングが実現できる。した
がって半導体装置の信頼性向上、量産適応に大きな効果
がある。As explained above, according to the present invention, the etching residue adhering to the etching chamber is blown away with nitrogen gas, thereby keeping the environment in the etching chamber always in a constant state and achieving reproducible etching. can. Therefore, it has a great effect on improving the reliability of semiconductor devices and adapting them to mass production.
さらに窒素ガスを用いるため、エツチング室内に水分を
持ちこむことがなり、シかも真空度を悪化させずに洗浄
が行なえるという点で、大きな利点がある。Furthermore, since nitrogen gas is used, there is a great advantage in that cleaning can be carried out without bringing moisture into the etching chamber or deteriorating the degree of vacuum.
第１図は本発明の反応性イオンエツチング装置の模式図
、第２図（ａ）〜（Ｃ１は第１図のエツチング装置を用
いた場合の試料のエツチング状況を示す工程断面図、第
３図は従来の反応性イオンエツチング装置の模式図、第
４図は第３図のエツチング装置を用いた場合の、試料の
エツチング状況を示す工程断面図である。
１・・・・・・エツチング室、２，３・・・・・・平行
平板電極、４・−・・・・エツチングウェハー、５・・
・・・・高周波電源。
６・・・・・・乾燥窒素ボンベ、１０・・・・・・半導
体基板、１１・・・・・・シリコン酸化膜、１２・・・
・・・モリブデンシリサイド膜、１３・・・・・・マス
ク、１４・・・・・・エツチングガス、１５・・・・・
・モリブデンとフッ素との化合物。
代理人 弁理士 内 原 音
第 ３ 回
卒 Ｉ 図
茅 ２ 図
↓↓↓↓↓↓↓↓に□FIG. 1 is a schematic diagram of the reactive ion etching apparatus of the present invention, FIGS. 2(a) to (C1 are process cross-sectional views showing the etching situation of a sample when the etching apparatus of FIG. 1 is used, and FIG. 3 is a schematic diagram of the reactive ion etching apparatus of the present invention. 4 is a schematic diagram of a conventional reactive ion etching apparatus, and FIG. 4 is a process cross-sectional view showing the etching situation of a sample when the etching apparatus of FIG. 3 is used. 1. Etching chamber; 2, 3...Parallel plate electrode, 4...Etching wafer, 5...
...High frequency power supply. 6... Dry nitrogen cylinder, 10... Semiconductor substrate, 11... Silicon oxide film, 12...
... Molybdenum silicide film, 13 ... Mask, 14 ... Etching gas, 15 ...
・A compound of molybdenum and fluorine. Agent Patent Attorney Oto Uchihara 3rd Class Graduate I Figure 2 Figure ↓↓↓↓↓↓↓↓□
Claims (1)
板電極を備え反応性ガスを導入して上記電極間にプラズ
マを発生させ、上記電極の一方の電極上に載置された半
導体基板上のモリブデンシリサイド膜をエッチングする
反応性イオンエッチング方法において、エッチングの前
後に窒素ガスによる洗浄を行うことを特徴とする反応性
イオンエッチング方法。The molybdenum on the semiconductor substrate placed on one of the electrodes is equipped with parallel plate electrodes arranged facing each other and to which high frequency power is applied, and a reactive gas is introduced to generate plasma between the electrodes. A reactive ion etching method for etching a silicide film, characterized in that cleaning with nitrogen gas is performed before and after etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4757386A JPS62204534A (en) | 1986-03-04 | 1986-03-04 | Reactive ion etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4757386A JPS62204534A (en) | 1986-03-04 | 1986-03-04 | Reactive ion etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62204534A true JPS62204534A (en) | 1987-09-09 |
Family
ID=12778982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4757386A Pending JPS62204534A (en) | 1986-03-04 | 1986-03-04 | Reactive ion etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62204534A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02256234A (en) * | 1987-12-28 | 1990-10-17 | Kyocera Corp | Method of removing residual halogen in reaction chamber |
| US7789969B2 (en) | 2006-11-01 | 2010-09-07 | Applied Materials, Inc. | Methods and apparatus for cleaning chamber components |
-
1986
- 1986-03-04 JP JP4757386A patent/JPS62204534A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02256234A (en) * | 1987-12-28 | 1990-10-17 | Kyocera Corp | Method of removing residual halogen in reaction chamber |
| US7789969B2 (en) | 2006-11-01 | 2010-09-07 | Applied Materials, Inc. | Methods and apparatus for cleaning chamber components |
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