JPS62123708A - Heat treatment method for semiconductor thin film - Google Patents
Heat treatment method for semiconductor thin filmInfo
- Publication number
- JPS62123708A JPS62123708A JP26344785A JP26344785A JPS62123708A JP S62123708 A JPS62123708 A JP S62123708A JP 26344785 A JP26344785 A JP 26344785A JP 26344785 A JP26344785 A JP 26344785A JP S62123708 A JPS62123708 A JP S62123708A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor thin
- heat treatment
- film
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野〕
本発明は半導体薄膜の熱処理方法に関するもので、特に
Ｔ Ｆ ’Ｉ’、 （Ｔｈｉｎ Ｆｉｌｍ Ｔｒａｎｓ
ｉｓｔｏｒ）を形成するのに最適な半導体薄膜を得る方
法に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to a method for heat treatment of semiconductor thin films, and particularly relates to a method for heat treatment of semiconductor thin films, and in particular, T F 'I', (Thin Film Trans
.
本発明は、半導体薄膜の特性を熱処理により向上させる
方法において、半導体薄膜に中性元素イオンを５ Ｘ
Ｉ Ｑ ”／ｃｎ！以上の濃度になるようにイオン注入
して上記半導体薄膜を非晶質化させた後、上記半導体薄
膜中で伝導に影響を与えない雰囲気中で熱処理を行うこ
とによって、ＴＰＴ等を形成するのに最適な半導体薄膜
を得る方法に関するものである。The present invention provides a method for improving the properties of a semiconductor thin film by heat treatment, in which neutral element ions are added to the semiconductor thin film by 5X
After making the semiconductor thin film amorphous by implanting ions to a concentration of I Q ”/cn! or more, TPT is The present invention relates to a method for obtaining a semiconductor thin film that is optimal for forming such as.
ＬＳＩの微小化に伴って、ＳｉＯ□膜上等膜上績晶Ｓｉ
を形成しその膜質を向上させて単結晶化させ、そこにＴ
ＰＴ等の素子を形成する技術の重要性が増大している。With the miniaturization of LSI, SiO
is formed, its film quality is improved, it becomes a single crystal, and T is added thereto.
The importance of technology for forming elements such as PT is increasing.
通常ＴＰＴ形成のために使用される多結晶Ｓｉ （又は
非晶質Ｓｉ）膜には３０００人程度０厚さのものが用い
られる。多結晶Ｓｉ膜形成後、イオン注入により多結晶
層中のダングリングボンドを破壊する。このダングリン
グボンドが破壊された膜をＳｉの場合の結晶回復温度５
５０℃以上例えば６００°ＣのＮ２等の雰囲気中で熱処
理することによって単結晶が膜内に成長する。Normally, a polycrystalline Si (or amorphous Si) film used for forming TPT has a thickness of about 3,000 mm. After forming the polycrystalline Si film, dangling bonds in the polycrystalline layer are destroyed by ion implantation. The crystal recovery temperature in the case of Si is the film in which this dangling bond is destroyed.
A single crystal is grown in the film by heat treatment in an atmosphere of N2 or the like at 50° C. or higher, for example, 600° C.
多結晶Ｓｉを基板表面上に付着させた後、Ｓｌをイオン
注入して多結晶Ｓｉ膜を非晶質化した後、熱処理を行っ
た後再結晶かさせている。このときの熱処理温度を高温
にすると、アニール処理後の膜抵抗率が低下してしまう
（Ｎ型になる）問題があった。特に半導体薄膜の厚さが
３０００Å以上の場合には、この種の影響は大きくない
が、厚さが３０００Å以下になるとアニール処理の条件
が膜抵抗率に大きく影響して来る。従ってこのような膜
にＴＰＴを作り込むと各トランジスタのｖｔｈがばらつ
くと言う問題があった。After depositing polycrystalline Si on the surface of the substrate, ions of Sl are implanted to make the polycrystalline Si film amorphous, followed by heat treatment and recrystallization. If the heat treatment temperature at this time is set to a high temperature, there is a problem that the film resistivity after the annealing treatment decreases (the film becomes N-type). In particular, when the thickness of the semiconductor thin film is 3000 Å or more, this type of influence is not large, but when the thickness becomes 3000 Å or less, the annealing treatment conditions have a large effect on the film resistivity. Therefore, when a TPT is formed in such a film, there is a problem in that the vth of each transistor varies.
多結晶Ｓｉ （非晶質Ｓｉでも可）を基板表面上に付着
させた後、その多結晶Ｓｉ膜中に中性元素イオンが半導
体薄膜全面に渡って５ Ｘ １０ ′９／ ｃｎ！以上
の濃度になるようにイオン注入を行って非晶質化させた
後、上記半導体薄膜中で伝導に影響を与えなｕ’Ａｒ、
Ｈｅ、真空中等の雰囲気中で熱処理を行うことによっ
て一定な膜抵抗率の半導体薄膜を得た。After depositing polycrystalline Si (or amorphous Si) on the substrate surface, neutral element ions are distributed in the polycrystalline Si film over the entire surface of the semiconductor thin film in an amount of 5 x 10'9/cn! After performing ion implantation to a concentration above and making it amorphous, u'Ar, which does not affect conduction in the semiconductor thin film,
A semiconductor thin film having a constant film resistivity was obtained by performing heat treatment in an atmosphere such as He or vacuum.
本願の発明者等が前記問題点の原因を種々検討した結果
、イオン注入を行って非晶質化させた半導体薄膜を６０
０℃以上の高温に置いて熱処理を行うと炉内雰囲気中に
存在するＮ２又は０２（酸化処理中）が半導体薄膜中に
侵入してドナーとなり膜の抵抗率を下げてしまうことが
判明した。このことは従来のように３０００人の厚みの
半導体膜では問題とならなかった。従って本発明者等は
Ｎ２又は０２を含まない炉内の雰囲気を採用して種々実
験を行った結果、良好な結果を得たので本願発明を提案
するに到ったものである。As a result of various studies on the causes of the above-mentioned problems, the inventors of the present application found that a semiconductor thin film that had been made amorphous by ion implantation was
It has been found that when heat treatment is performed at a high temperature of 0° C. or higher, N2 or 02 (during oxidation treatment) present in the furnace atmosphere enters the semiconductor thin film and becomes a donor, lowering the resistivity of the film. This did not pose a problem with conventional semiconductor films having a thickness of 3,000 people. Therefore, the present inventors conducted various experiments using an atmosphere in the furnace that does not contain N2 or 02, and obtained good results, which led them to propose the present invention.
減圧ＣＶＤ法により半導体基板上に８００人の厚さに形
成した半導体Ｓｉ多結晶層中にＳｉ”を４０ｋｅｙで加
速して３Ｘ１０”ｃｍ弓注入させて多結晶Ｓｉ半導体層
を非晶質化させた後、６００℃Ａｒ雰囲気中で３０時間
のアニール処理を行って結晶化を進め、高抵抗の半導体
薄膜を得た。The polycrystalline Si semiconductor layer was made amorphous by accelerating Si'' with 40 keys and injecting it into a 3x10'' cm arch into a semiconductor Si polycrystalline layer formed to a thickness of 800 cm on a semiconductor substrate by low pressure CVD method. Thereafter, annealing treatment was performed for 30 hours in an Ar atmosphere at 600° C. to advance crystallization, and a high-resistance semiconductor thin film was obtained.
上記の実施例で、真空中でアニールして単結晶化した半
導体薄膜の比抵抗はｌ×１０６Ω−ｃｍであったが、雰
囲気を真空でな〈従来のようなＮ２ガスにして７二−ル
した半導体薄膜の比抵抗は１×１０４Ω−ｃｍにしかな
らなかった。また雰囲気を酸素にしてアニールした半導
体薄膜の比抵抗はｌＸｌ０’Ω−ｃｍであった。これか
ら見ても本発明のアニール法により、高抵抗で抵抗率の
一定した半導体薄膜が複雑な操作を伴わずに得られるこ
とが判る。In the above example, the specific resistance of the semiconductor thin film that was annealed in vacuum and made into a single crystal was 1 x 106 Ω-cm. The specific resistance of the semiconductor thin film obtained was only 1×10 4 Ω-cm. Further, the specific resistance of the semiconductor thin film annealed in an oxygen atmosphere was 1X10'Ω-cm. As can be seen from this, it can be seen that by the annealing method of the present invention, a semiconductor thin film with high resistance and constant resistivity can be obtained without complicated operations.
Claims (1)
を非晶質化した後熱処理を行う半導体薄膜の熱処理方法
において、 上記半導体薄膜の上記中性元素イオンの濃度が５×１０
＾１＾９／ｃｍ＾３以上となる様に上記半導体薄膜を非
晶質化した後、上記半導体薄膜中で伝導に影響を与えな
い雰囲気中で熱処理を行う半導体薄膜の熱処理方法。[Scope of Claims] A heat treatment method for a semiconductor thin film, in which neutral element ions are implanted into a semiconductor thin film to make the semiconductor thin film amorphous, and then heat treatment is performed, wherein the concentration of the neutral element ions in the semiconductor thin film is 5. ×10
A method for heat treatment of a semiconductor thin film, which comprises making the semiconductor thin film amorphous so as to have a conductivity of ^1^9/cm^3 or more, and then heat-treating the semiconductor thin film in an atmosphere that does not affect conduction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26344785A JPS62123708A (en) | 1985-11-22 | 1985-11-22 | Heat treatment method for semiconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26344785A JPS62123708A (en) | 1985-11-22 | 1985-11-22 | Heat treatment method for semiconductor thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62123708A true JPS62123708A (en) | 1987-06-05 |
Family
ID=17389635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26344785A Pending JPS62123708A (en) | 1985-11-22 | 1985-11-22 | Heat treatment method for semiconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62123708A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07153956A (en) * | 1993-08-09 | 1995-06-16 | Gold Star Electron Co Ltd | Thin film transistor and manufacture thereof |
-
1985
- 1985-11-22 JP JP26344785A patent/JPS62123708A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07153956A (en) * | 1993-08-09 | 1995-06-16 | Gold Star Electron Co Ltd | Thin film transistor and manufacture thereof |
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