JPS63273365A - Infrared-ray detector - Google Patents
Infrared-ray detectorInfo
- Publication number
- JPS63273365A JPS63273365A JP62108033A JP10803387A JPS63273365A JP S63273365 A JPS63273365 A JP S63273365A JP 62108033 A JP62108033 A JP 62108033A JP 10803387 A JP10803387 A JP 10803387A JP S63273365 A JPS63273365 A JP S63273365A
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- elements
- substrate
- layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 238000001514 detection method Methods 0.000 claims description 24
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 abstract description 13
- 229910004613 CdTe Inorganic materials 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000005468 ion implantation Methods 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000000407 epitaxy Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000000969 carrier Substances 0.000 description 8
- 238000000926 separation method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000005083 Zinc sulfide Substances 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- 229910004262 HgTe Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000001444 catalytic combustion detection Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、光起電力型赤外線検出デバイスに関シ、特
に、半絶縁性カドミウムチルライド（ＣｄＴｅ）基板上
に水銀カドミウムチルライド（）ＩｇｃｄＴｅ）層をエ
ピタキシャル成長したウェハを使用して、カドミウムチ
ルライド側から赤外線を入射する（以後、裏面入射型と
呼ぶ）光起電力型赤外線検出デバイスの改良に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to photovoltaic infrared detection devices, and in particular, the invention relates to a photovoltaic infrared detection device, and in particular, to a photovoltaic infrared detection device. This invention relates to the improvement of a photovoltaic infrared detection device that uses a wafer on which a cadmium chillide layer is epitaxially grown and in which infrared rays are incident from the cadmium chillide side (hereinafter referred to as a back-illuminated type).
第３図は例えばＩＥＥＥ Ｉ−ランザクションズオン
エレクトロン デバイシーズ 第ＥＤ −２１（１９
８２年） （Ｔｒａｎｓａｃｔｉｏｎｓ ｏｎ Ｅｌ
ｅｃｔｒｏｎ ＤｅｖｉｃｅｓＶｏｌＪＤ−２９（１９
８２） ）の２７５ページに示された従来の赤外線検出
デバイスを示す断面図であり、図において、１は半絶縁
性のカドミウムチルライド（ＣｄＴｅ）基板、２はこの
基板１上に例えば液相エピタキシャル成長法（ＬＰＥ）
、分子線エビタキシャル成長法（ＭＢＥ）、有機金属化
学堆積法（ＭＯＣＶ Ｄ）等によって成長した１０μｍ
程度の厚みのｐ型ＨｇＣｄＴｅ層、３はこのｐ型ＨｇＣ
ｄＴｅ［２に例えばホウ素（Ｂ）のイオン注入あるいは
水銀（）Ｉｇ）の拡散によって島状に形成されたｎ ’
ｐＭ域、４は例えば硫化亜鉛（Ｚｎ Ｓ ）から成る表
面安定化膜、５は前記ｎ領域３とシリコン（Ｓｔ）上に
形成された電荷結合素子（ＣＣＤ）とを電気的１機械的
に結合するための、例えばインジウム（Ｉｎ）で形成さ
れた金属バンプ、６は入射する赤外線である。Figure 3 shows, for example, the IEEE I-Transactions on Electron Devices No. ED-21 (19
1982) (Transactions on El
ectron DevicesVolJD-29(19
This is a cross-sectional view showing a conventional infrared detection device shown on page 275 of 82) ), in which 1 is a semi-insulating cadmium chillide (CdTe) substrate, 2 is a substrate formed by liquid phase epitaxial growth on this substrate 1, for example. Law (LPE)
, 10 μm grown by molecular beam epitaxy (MBE), metal organic chemical deposition (MOCVD), etc.
3 is a p-type HgCdTe layer with a thickness of about
n' formed in an island shape by ion implantation of boron (B) or diffusion of mercury (Ig) into dTe[2.
pM region, 4 is a surface stabilizing film made of, for example, zinc sulfide (ZnS), and 5 is electrical and mechanical coupling between the n region 3 and a charge coupled device (CCD) formed on silicon (St). A metal bump 6 made of, for example, indium (In) is for incident infrared rays.
ＨｇＣｄＴｅはＨｇＴｅとＣｄＴｅの混晶であり、特に
ＨｇＴｅが０．８の組成の結晶は、１０μｍ帯の赤外線
検出素子用材料として広く使われている。最近特に多素
子化が進み、６４Ｘ６４程度の画素数を持つ検出素子が
形成され、５ｉ−ＣＯＤと結合し固体撮像装置として広
範囲の用途が期待されている。このようなＨｇＣｄＴｅ
素子とＣＣＤの高密度の結合には、金属バンプを用いて
フェイスダウンボンディングするのが一般的である。そ
の場合、裏面入射方式とする必要があり、赤外光に対し
て透明なＣｄＴｅ基板上に成長したＨｇＣｄＴｅ［が有
効である。HgCdTe is a mixed crystal of HgTe and CdTe, and in particular, a crystal with a composition of 0.8 HgTe is widely used as a material for infrared detection elements in the 10 μm band. Recently, the number of elements has particularly increased, and detection elements having a pixel count of approximately 64×64 have been formed, and are expected to be used in a wide range of applications as solid-state imaging devices when combined with 5i-COD. Such HgCdTe
Face-down bonding using metal bumps is common for high-density bonding of elements and CCDs. In that case, a back-illuminated method is required, and HgCdTe [grown on a CdTe substrate that is transparent to infrared light] is effective.
このように冑集積度の赤外線検出素子になると、それぞ
れの素子及び素子間に入射される赤外線の検出電流が互
いに干渉して分解能が低下するなどして、検出信号や映
像に悪影響があり、改善が要望されている。When an infrared detection element with such a high degree of integration is used, the detection currents of the infrared rays incident on each element and between the elements interfere with each other, reducing the resolution, which has a negative effect on the detection signal and image, and it is difficult to improve it. is requested.
第３図には、隣接する２素子の配列を示しているが、Ｃ
ｄＴｅの基板１の表面にはｐ型のＨｇＣｄＴｅのエピタ
キシャル層２が１０μｍ程度の厚みで形成される。この
ｐ型のＨｇＣｄＴｅのエピタキシャル層２上に絶縁膜４
が４０００人の厚みで形成され、一方ｎ型領域３が図の
ように形成されて、この部分から電極が引き出されバン
プ５で外部に引き出される。FIG. 3 shows the arrangement of two adjacent elements.
A p-type HgCdTe epitaxial layer 2 with a thickness of about 10 μm is formed on the surface of the dTe substrate 1 . An insulating film 4 is formed on this p-type HgCdTe epitaxial layer 2.
is formed to have a thickness of 4,000 mm, while an n-type region 3 is formed as shown in the figure, and an electrode is drawn out from this portion and drawn out by a bump 5.
このような配置における２個の赤外線検出素子の間隔は
通常５０μｍ程度であり、かなり近接した構造である。The spacing between two infrared detecting elements in such an arrangement is usually about 50 μm, which is a fairly close structure.
また、このデバイスでは、裏面が赤外線６の入射する部
分であって、ここから入射した赤外線６は基板１を透過
し、ＨｇＣｄＴｅ層２内で吸収され電子−正孔対が発生
する。ｐ型層２内で発生した少数キャリア、電子は拡散
してｐｎ接合に到達した場合、検出電流として測定され
、その電流の各素子間の分布が２次元画像として取り出
される。Further, in this device, the back surface is the part where the infrared rays 6 are incident, and the infrared rays 6 incident from here are transmitted through the substrate 1 and absorbed within the HgCdTe layer 2 to generate electron-hole pairs. When the minority carriers and electrons generated in the p-type layer 2 diffuse and reach the pn junction, they are measured as a detection current, and the distribution of the current between each element is taken out as a two-dimensional image.
従来の赤外線検出デバイスは以上のように構成されてい
るので、素子間の間隔が少数キャリアの拡散長と同等も
しくはより短い場合は、ｌ（ｇｃｄＴｅ層が連続してい
るため、互いの素子領域内で発生した少数キャリアが拡
散し干渉し合い分解能が落ちるという問題があった。Conventional infrared detection devices are configured as described above, so if the spacing between elements is equal to or shorter than the diffusion length of minority carriers, l(gcdTe layers are continuous, There was a problem in that the minority carriers generated in this process diffused and interfered with each other, reducing resolution.
また、素子間のＨｇＣｄＴｅ層を除去して少数キャリア
の拡散による分解能の低下を防ごうとすると、ＣｄＴｅ
基板は半絶縁性で電気的接続ができない、及びＣｄＴｅ
は赤外光に対して透明であり、素子間即ちＨｇＣｄＴｅ
を除去した部分に入射した赤外光は大部分透過し、赤外
線検出デバイスをフェイスダウンボンディングした対象
、例えば５ｉ−ＣＣＤ上で反射し、再び赤外線検出デバ
イスに信号光以外の一光（迷光）として入射し、分解能
の低下を招くという問題があった。In addition, when attempting to prevent resolution degradation due to diffusion of minority carriers by removing the HgCdTe layer between elements, CdTe
The substrate is semi-insulating and cannot be electrically connected, and CdTe
is transparent to infrared light, and between the elements, that is, HgCdTe
Most of the infrared light that enters the removed area is transmitted, is reflected on the object to which the infrared detection device is face-down bonded, such as a 5i-CCD, and is returned to the infrared detection device as light other than signal light (stray light). There was a problem that the incident light caused a drop in resolution.
この発明は上記、のような問題点を解消するためになさ
れたもので、素子間の電気的接続を確保し、分解能の低
下を防ぐことのできる裏面入射型赤外線検出デバイスを
得ることを目的とする。This invention was made to solve the above problems, and its purpose is to obtain a back-illuminated infrared detection device that can ensure electrical connection between elements and prevent a decrease in resolution. do.
この発明に係る赤外線検出デバイスは、各素子間に半絶
縁性基板まで達する溝を掘り、この溝の底部を赤外線を
透過しない膜で覆うとともに、上記各素子の第１導電層
間を金属層で結合したものである。In the infrared detection device according to the present invention, a groove is dug between each element reaching the semi-insulating substrate, the bottom of the groove is covered with a film that does not transmit infrared rays, and the first conductive layer of each element is bonded with a metal layer. This is what I did.
この発明においては、各素子間に形成した半絶縁性基板
まで達する溝の底部を不透明膜で覆うことにより、少数
キャリアによる隣接素子相互の干渉を防止でき、迷光の
発生を防止することができる。In this invention, by covering the bottom of the groove extending to the semi-insulating substrate formed between each element with an opaque film, it is possible to prevent interference between adjacent elements due to minority carriers, and to prevent the generation of stray light.
以下、この発明の一実施例を図について説明する。第１
図において、７は対象波長の赤外光に対して不透明な膜
、８は素子間を結合する金属層、９は素子間分離のため
に設けられたＣｄＴｅ基板１まで届いた分離溝である。An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, 7 is a film that is opaque to infrared light of the target wavelength, 8 is a metal layer that connects elements, and 9 is a separation groove that reaches the CdTe substrate 1 provided for isolation between elements.
次に、この図に示すデバイスの作製法を説明する。Next, a method for manufacturing the device shown in this figure will be explained.
ＣｄＴｅ基板１上に例えば液相エピタキシャル法等で成
長したｐ型ＨｇＣｄＴｅ層２上に、例えばボロンのイオ
ン注入を選択的に行なうことにより、島状にｎ領域３を
形成する。壱′の後、写真製版及び臭素のメタノール溶
液を用いて各ｎ ｅＴＪＴａＯ２に溝９を形成する。写
真製版を行い、５ｉＯｔ ７を例えば電子ビーム蒸着等
で形成し、リフトオフ法で溝の底部だけに残す。同様な
方法で、金３．’ＺｎＳ４゜Ｉｎバンプ５の順に形成を
行う。An island-shaped n region 3 is formed on a p-type HgCdTe layer 2 grown on a CdTe substrate 1 by, for example, a liquid phase epitaxial method by selectively implanting boron ions, for example. After step 1, grooves 9 are formed in each neTJTaO2 using photolithography and a methanol solution of bromine. Photolithography is performed, and 5iOt 7 is formed by, for example, electron beam evaporation, and is left only at the bottom of the groove by a lift-off method. In the same way, gold 3. 'ZnS4°In bumps 5 are formed in this order.
このようにして作製されたデバイスでは、素子間にＣｄ
Ｔｅ基板１まで届く分離溝９を設けたことにより、隣接
した素子のｐ領域２に発生した少数キャリア（電子）が
相互に干渉し合うことがなくなる。また、この分離溝９
により従来素子間の電気的接続を取っていたＨｇＣｄＴ
ｅ層２が分離されるが、この部分に例えば金からなる金
属層８を設けることにより、素子間の電気的接続を取る
ことができる。なお、ＨｇＣｄＴｅ ２と金８の界面で
は少数キャリアは再結合し、他素子へ影響を及ぼすこと
はない。In the device manufactured in this way, Cd
By providing the separation groove 9 that reaches the Te substrate 1, the minority carriers (electrons) generated in the p regions 2 of adjacent elements do not interfere with each other. In addition, this separation groove 9
HgCdT, which conventionally made electrical connections between elements,
Although the e-layer 2 is separated, electrical connection between the elements can be established by providing a metal layer 8 made of, for example, gold in this portion. Note that minority carriers recombine at the interface between HgCdTe 2 and gold 8, and do not affect other elements.
また、分離溝９の部分、つまり素子間に入゛射する赤外
光、例えば波長１０μｍ帯の光を分解能の低下を招く迷
光としないために、分離溝９の底部を例えば１０μｍ帯
の光に対して不透明な二酸化シリコン（Ｓｔｏり約１μ
ｍで覆い、赤外光の侵入を防いでいるので、迷光による
分解能の低下が防止される。In addition, in order to prevent the infrared light that enters the separation groove 9 between the elements, such as light in the 10 μm wavelength band, from becoming stray light that causes a decrease in resolution, the bottom of the separation groove 9 is exposed to light in the 10 μm band, for example. Opaque silicon dioxide (about 1μ
Since it is covered with m and prevents infrared light from entering, deterioration of resolution due to stray light is prevented.
なお、上記実施例では不透明膜７は分離溝９の底面のＣ
ｄＴｅ基板１に直接つけたが、膜７の下にＺｎＳ等の赤
外光に透明な膜を設けてもよく、また、膜７の下が一部
分金属層８であってもよく、不透明膜７の効果は上記実
施例と同様である。In the above embodiment, the opaque film 7 covers the bottom surface of the separation groove 9.
Although it is directly attached to the dTe substrate 1, a film transparent to infrared light such as ZnS may be provided under the film 7. Also, a part of the bottom of the film 7 may be a metal layer 8, and the opaque film 7 The effect is similar to that of the above embodiment.
また、上記実施例ではプレーナ型の素子について説明し
たが、本発明は第２図に示すようなメサ型の素子につい
ても上記実施例と同様の効果を奏する。Furthermore, although the above embodiment has been described with respect to a planar type element, the present invention can also produce effects similar to those of the above embodiment with respect to a mesa type element as shown in FIG.
さらに、上記実施例では第１導電層２をｐ型。Furthermore, in the above embodiment, the first conductive layer 2 is p-type.
第２導電層３をｎ型として説明したが、これは逆であっ
てもよく、効果は上記実施例と同様である。Although the second conductive layer 3 has been described as an n-type, it may be reversed and the effect is the same as in the above embodiment.
以上のように、この発明に係る赤外ｖＡ検出デバイスに
よれば、各素子間を半絶縁性基板まで達する溝で分離し
、この溝の底部に赤外光に不透明な膜を設け、各素子の
第１導電層間を金属層で接続するように構成したので、
少数キャリアによる干渉、迷光の発生を防止でき、高感
度で分解能の高いものが得られる効果がある。As described above, according to the infrared vA detection device of the present invention, each element is separated by a groove that reaches the semi-insulating substrate, a film opaque to infrared light is provided at the bottom of this groove, and each element is separated by a groove that reaches the semi-insulating substrate. Since the first conductive layers are connected by a metal layer,
Interference due to minority carriers and generation of stray light can be prevented, and high sensitivity and high resolution can be obtained.
第１図はこの発明の一実施例による赤外線検出デバイス
を示す断面図、第２図はこの発明の他の実施例による赤
外線検出デバイスを示す断面図、第３図は従来の赤外線
検出デバイスを示す断面図である。
１はＣｄＴｅ基板、２はｐ型１１ｇｃｄＴｅ層、３はｎ
型ＨｇＣｄＴｅ？Ｊ域、４は表面安定化膜、５はバンブ
、６は赤外線、７は不透明膜、８は金属層、９は分離溝
である。
なお、図中同一符号は同一、又は相当部分を示す。FIG. 1 is a sectional view showing an infrared detection device according to an embodiment of the present invention, FIG. 2 is a sectional view showing an infrared detection device according to another embodiment of the invention, and FIG. 3 is a sectional view showing a conventional infrared detection device. FIG. 1 is a CdTe substrate, 2 is a p-type 11gcdTe layer, 3 is an n
Type HgCdTe? J region, 4 is a surface stabilizing film, 5 is a bump, 6 is an infrared ray, 7 is an opaque film, 8 is a metal layer, and 9 is a separation groove. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (3)
電層上に導電性の異なる第２導電層を島状に配列して各
素子を形成して成り、上記半絶縁性基板側から赤外線を
入射する光起電力型赤外線検出デバイスにおいて、 上記各素子間に形成された上記半絶縁性基板まで達する
溝と、 上記溝の底部に形成された赤外線を透過しない膜と、 上記各素子の第１導電層間を結合するための金属層とを
備えたことを特徴とする赤外線検出デバイス。(1) A first conductive layer is formed on a semi-insulating substrate, and a second conductive layer having a different conductivity is arranged in an island shape on the first conductive layer to form each element, and In a photovoltaic infrared detection device in which infrared rays are incident from a transparent substrate side, a groove reaching the semi-insulating substrate formed between each of the elements, a film formed at the bottom of the groove that does not transmit infrared rays, An infrared detection device comprising: a metal layer for coupling the first conductive layers of each of the elements.
特許請求の範囲第１項記載の赤外線検出デバイス。(2) The infrared detection device according to claim 1, wherein each of the elements is of a planar type.
請求の範囲第１項記載の赤外線検出デバイス。(3) The infrared detection device according to claim 1, wherein each of the elements is mesa-shaped.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62108033A JPS63273365A (en) | 1987-04-30 | 1987-04-30 | Infrared-ray detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62108033A JPS63273365A (en) | 1987-04-30 | 1987-04-30 | Infrared-ray detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63273365A true JPS63273365A (en) | 1988-11-10 |
Family
ID=14474247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62108033A Pending JPS63273365A (en) | 1987-04-30 | 1987-04-30 | Infrared-ray detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63273365A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5075748A (en) * | 1989-03-10 | 1991-12-24 | Mitsubishi Denki Kabushiki Kaisha | Photodetector device |
| US5115295A (en) * | 1989-10-31 | 1992-05-19 | Mitsubishi Denki Kabushiki Kaisha | Photodetector device |
| US5156980A (en) * | 1989-03-10 | 1992-10-20 | Mitsubishi Denki Kabushiki Kaisha | Method of making a rear surface incident type photodetector |
| WO2009004376A2 (en) * | 2007-06-29 | 2009-01-08 | Durham Scientific Crystals Ltd | Semiconductor device structure and method of manufacture thereof |
-
1987
- 1987-04-30 JP JP62108033A patent/JPS63273365A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5075748A (en) * | 1989-03-10 | 1991-12-24 | Mitsubishi Denki Kabushiki Kaisha | Photodetector device |
| US5156980A (en) * | 1989-03-10 | 1992-10-20 | Mitsubishi Denki Kabushiki Kaisha | Method of making a rear surface incident type photodetector |
| US5115295A (en) * | 1989-10-31 | 1992-05-19 | Mitsubishi Denki Kabushiki Kaisha | Photodetector device |
| WO2009004376A2 (en) * | 2007-06-29 | 2009-01-08 | Durham Scientific Crystals Ltd | Semiconductor device structure and method of manufacture thereof |
| WO2009004376A3 (en) * | 2007-06-29 | 2009-02-26 | Durham Scient Crystals Ltd | Semiconductor device structure and method of manufacture thereof |
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