JPH0265181A - Infrared detector - Google Patents
Infrared detectorInfo
- Publication number
- JPH0265181A JPH0265181A JP63218109A JP21810988A JPH0265181A JP H0265181 A JPH0265181 A JP H0265181A JP 63218109 A JP63218109 A JP 63218109A JP 21810988 A JP21810988 A JP 21810988A JP H0265181 A JPH0265181 A JP H0265181A
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- wavelength band
- infrared rays
- lens
- crystal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims abstract description 31
- 230000004075 alteration Effects 0.000 claims abstract description 16
- 239000013078 crystal Substances 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 24
- 230000035945 sensitivity Effects 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 229910004613 CdTe Inorganic materials 0.000 abstract description 4
- 229910052738 indium Inorganic materials 0.000 abstract description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 101150036577 fl11 gene Proteins 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003307 slaughter Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔手肌 要〕
赤外線検知装置に関し、
短波長域と長波長域の赤外線を検知できる検知素子が一
枯して一枚の基板上に形成され、構造が簡単な赤外線検
知装置を目的とし、
赤外線透過基板の裏面側に設置されたレンズと、前記赤
外線透過基板上に形成され、赤外線の短波長帯に感度を
有し、前記短波長帯の赤外線の波長と長波長帯の赤外線
の波長とで決定される色収差の値に略等しい厚さを有す
る第１の結晶層に形成された第１のホトダイオードアレ
イと、前記検知すべき赤外線の長波長帯に感度を有する
第２の結晶層に形成された第２のホトダイオードアレイ
とよりなり、前記レンズを介して基板の裏面側より短波
長帯と長波長帯の赤外線を入射し、前記短波長帯の赤外
線による色収差で決定される前記レンズの第１の焦点を
前記基板と第１の結晶層の境界面に合致させるとともに
、前記赤外線の長波長帯の色収差によって決定されるレ
ンズの第２の焦点を、前記第１および第２の結晶層の境
界面にそれぞれ合致させ、前記短波長帯の赤外線を前記
第１のホトダイオードアレイで、前記長波長帯の赤外線
を第２のホトダイオードアレイで検知することで構成す
る。[Detailed Description of the Invention] [Hand Skin Required] Regarding an infrared detection device, a detection element capable of detecting infrared rays in a short wavelength range and a long wavelength range is formed on a single substrate, and the infrared ray detection device has a simple structure. Intended as a detection device, a lens installed on the back side of an infrared transmitting substrate and a lens formed on the infrared transmitting substrate, having sensitivity to a short wavelength band of infrared rays, and having sensitivity to the short wavelength band of infrared rays and long wavelengths. a first photodiode array formed in a first crystal layer having a thickness approximately equal to the value of chromatic aberration determined by the wavelength of the infrared light in the band; and a first photodiode array sensitive to the long wavelength band of the infrared light to be detected. A second photodiode array is formed on the second crystal layer, and infrared rays in the short wavelength band and long wavelength band are incident from the back side of the substrate through the lens, and the chromatic aberration is determined by the infrared rays in the short wavelength band. The first focal point of the lens is made to coincide with the interface between the substrate and the first crystal layer, and the second focal point of the lens is determined by the chromatic aberration in the long wavelength band of the infrared rays. The infrared rays in the short wavelength band are detected by the first photodiode array, and the infrared rays in the long wavelength band are detected by the second photodiode array, respectively, so as to match the boundary surfaces of the second crystal layer.
本発明は赤外線検知装置に係り、特に短波長の赤外線と
長波長の赤外線が検知できる赤外線検知装置に関する。The present invention relates to an infrared detection device, and more particularly to an infrared detection device capable of detecting short wavelength infrared rays and long wavelength infrared rays.
赤外線には主として３〜５μｍの短波長の赤外線と、１
０μｍの長波長の赤外線の二種類の赤外線がある。Infrared rays mainly include infrared rays with short wavelengths of 3 to 5 μm and 1
There are two types of infrared rays: one with a long wavelength of 0 μm.
従来、このような二種類の赤外線を検知する赤外線検知
装置としては、前記短波長側に感度を有する化合物半導
体結晶と、長波長側に感度を有する化合物半導体結晶と
を別個に用意し、この別個に用意した結晶にホトダイオ
ード等の赤外線検知装置をそれぞれ別個に形成している
。Conventionally, infrared detection devices that detect these two types of infrared rays have separately prepared a compound semiconductor crystal that is sensitive to the short wavelength side and a compound semiconductor crystal that is sensitive to the long wavelength side. Infrared detection devices such as photodiodes are formed separately on each crystal prepared in the next step.
そのため、この検知装置に接続される信号処理装置を別
個に設ける等、これら検知装置および信号処理装置を組
み合わせた検査システムが必要となり、赤外線検知シス
テムが複雑化、かつ大型化する問題がある。Therefore, an inspection system that combines these detection devices and signal processing devices, such as separately providing a signal processing device connected to this detection device, is required, which poses a problem of complicating and increasing the size of the infrared detection system.
本発明は一ヒ記した問題点を解決し、−枚の基板Ｊ−に
短波長側の赤外線を検知する素子と、長波長側の赤外線
を検知する素子とを一括して形成した構造の節単な赤外
線検知装置の提供を目的とする。The present invention solves the problems mentioned above, and has a structure in which an element for detecting infrared rays on the short wavelength side and an element for detecting infrared rays on the long wavelength side are collectively formed on one substrate J. The purpose is simply to provide an infrared detection device.
第１図は本発明の赤外線検知装置の原理図で、図示する
ように、赤外線透過基板１の裏面側に設置されたレンズ
２と、前記赤外線透過基板上に形成され、赤外線の短波
長帯に感度を有し、前記短波長帯の赤外線の波長と長波
長帯の赤外線の波長とで決定される色収差の値に略等し
い厚さを有する第１の結晶層３に形成された第１の赤外
線検知素子４と、前記検知すべき赤外線の長波長帯に感
度を有する第２の結晶Ｎ５に形成された第２の赤外線検
知素子６とよりなり、前記レンズ２を介して基板１の裏
面側より短波長帯と長波長帯の赤外線を入射し、前記短
波長帯の赤外線による色収差で決定される前記レンズの
第１の焦点７を前記基板と第１の結晶層の境界面に合致
させるとともに、前記赤外線の長波長帯の色収差によっ
て決定されるレンズの第２の焦点８を、前記第１および
第２の結晶層の境界面にそれぞれ合致させ、前記短波長
帯の赤外線を前記第１の赤外線検知素子４で、前記長波
長帯の赤外線を第２の赤外線検知素子６で検知すること
で構成する。FIG. 1 is a principle diagram of the infrared detecting device of the present invention. As shown in the figure, a lens 2 installed on the back side of an infrared transmitting substrate 1, and a lens 2 formed on the infrared transmitting substrate detecting the short wavelength band of infrared rays. A first infrared ray formed in the first crystal layer 3 that has sensitivity and has a thickness approximately equal to the value of chromatic aberration determined by the wavelength of the infrared ray in the short wavelength band and the wavelength of the infrared ray in the long wavelength band. It consists of a detection element 4 and a second infrared detection element 6 formed on a second crystal N5 sensitive to the long wavelength band of the infrared rays to be detected. Infrared rays in a short wavelength band and a long wavelength band are incident, and the first focal point 7 of the lens, which is determined by the chromatic aberration due to the infrared rays in the short wavelength band, is made to match the interface between the substrate and the first crystal layer, A second focal point 8 of the lens determined by the chromatic aberration in the long wavelength band of the infrared rays is made to coincide with the interface between the first and second crystal layers, respectively, so that the infrared rays in the short wavelength band are focused on the first infrared ray. The detection element 4 detects infrared rays in the long wavelength band using the second infrared detection element 6.
第１図に示すようにレンズの色収差は、該レンズに入射
する赤外線の波長がλ１．λ２のように異なると、像の
生じる位置、即ち焦点（Ｆ）や像の大きさが異なる現象
で、これはレンズを構成している材料の屈折率が光の波
長によって異なるために生じる。As shown in FIG. 1, the chromatic aberration of a lens is caused by the wavelength of infrared rays incident on the lens being λ1. When λ2 is different, the position where the image is generated, that is, the focal point (F), and the size of the image are different. This phenomenon occurs because the refractive index of the material forming the lens differs depending on the wavelength of the light.
レンズ２の色収差Δｆは、レンズの平均屈折率ｎに対す
る焦点距離をｆとすると、第（１）式で示される。The chromatic aberration Δf of the lens 2 is expressed by equation (1), where f is the focal length with respect to the average refractive index n of the lens.
Δｒ−ｒΔｎ ／ ｎ −１・・・・・・・・・（１）
更にレンズに入射する光線の波長をλ０．λ２とすると
、」１記Δｎは第（２）式で表される。Δr−rΔn/n−1・・・・・・・・・(1)
Furthermore, the wavelength of the light beam incident on the lens is set to λ0. When λ2 is assumed, Δn in 1 is expressed by equation (2).
Δｎ＝ｎ （λ、）−ｎ（λ２）・・・・・・・・・（
２）従って、レンズに異なった二種類の波長の赤外線、
即ち波長λ、が３〜５μｍの短波長帯の赤外線と、波長
ス２が１０μｍの長波長帯の赤外線を入射させた場合、
レンズの色収差によって異なった２箇所に焦点ｒ＋（λ
＋）、ｒｚ （λ２）が形成され、この異なった２箇所
の焦点の位置に、−枚の基板上に形成され、上記二種類
の波長の各々に感度を有する結晶層で形成された二種類
のホトダイオードを配設することで、−個の赤外線セン
サで二種類の波長の赤外線を検知できる。Δn=n (λ,)−n(λ2)・・・・・・・・・(
2) Therefore, the lens receives two different wavelengths of infrared rays,
That is, when infrared rays in a short wavelength band with a wavelength λ of 3 to 5 μm and infrared rays in a long wavelength band with a wavelength λ of 10 μm are incident,
The focal point r+(λ
+), rz (λ2) are formed, and at these two different focal positions, two types of crystal layers are formed on the - substrate and are sensitive to each of the above two types of wavelengths. By arranging these photodiodes, - infrared sensors can detect infrared rays of two different wavelengths.
以下、図面を用いて本発明の一実施例につき詳細に説明
する。Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
第２図に本発明の赤外線検知装置の一実施例を示す。図
示するように赤外線を透過するＣｄＴｅ基板１１ヒに第
１層のＰ型のＨｇ＋−ｘ Ｃｄｘ Ｔｅ （ｘ ＝０．
３）の結晶層１２と第２層のＰ型のＩ（ｇｌ−、ＣｄＸ
Ｔｅ （ｘ ＝０．２）の結晶層１３ががそれぞれ気相
エピタキシャル成長法により形成されている。FIG. 2 shows an embodiment of the infrared detection device of the present invention. As shown in the figure, a first layer of P-type Hg+-x Cdx Te (x = 0.
3) of the crystal layer 12 and the second layer of P-type I (gl-, CdX
Crystal layers 13 of Te (x = 0.2) are each formed by vapor phase epitaxial growth.
上記第１層の結晶層１２は赤外線の短波長帯（λ。The first crystal layer 12 is in the infrared short wavelength band (λ).
＝３〜５μｍ）に高感度を有し、第２層の結晶層１３は
赤外線の長波長（λ２−１０μＩＩ＋）に高感度を有し
、上記第１層の結晶層１２の厚さｄは、前記第（１）弐
で示された色収差の値のΔｒと同一の厚さとなるように
する。= 3 to 5 μm), the second crystal layer 13 has high sensitivity to long wavelengths of infrared rays (λ2-10 μII+), and the thickness d of the first crystal layer 12 is: The thickness is made to be the same as the chromatic aberration value Δr shown in (1) 2 above.
この結晶層３のエネルギーバンドギャップＥｇは！１を
ブランクの定数（６，６２６Ｘ１０−”Ｊｓ）とし、Ｃ
を光速（２，９９７９Ｘ １０８ｍ／５ｅｃ） とする
と、Ｅｇ、＝ｈｃ／λ、 −１，２４／ λ、となり、
また結晶層５のエネルギーバンドギャップＥｇ２ ＝ｈ
ｃ／ λ２＝］、、２４／ λ２となる。What is the energy band gap Eg of this crystal layer 3? 1 is a blank constant (6,626X10-”Js), and C
If is the speed of light (2,9979X 108m/5ec), then Eg, = hc/λ, -1,24/λ,
Also, the energy band gap Eg2 of the crystal layer 5 = h
c/λ2=], 24/λ2.
このように第１の結晶層３の厚さｄを色収差の値Δｆと
同一の厚さとすることで、基板１１の裏面より入射され
た長波長帯の光（１０μｍ）は、第１の結晶層３と第２
の結晶層５の境界面に焦点（ｆ２）が合致するようにな
り、長波長帯の光が効率良く検知できる。By making the thickness d of the first crystal layer 3 the same as the chromatic aberration value Δf in this way, the long wavelength band light (10 μm) incident from the back surface of the substrate 11 is transmitted through the first crystal layer 3. 3rd and 2nd
The focal point (f2) coincides with the boundary surface of the crystal layer 5, and light in a long wavelength band can be detected efficiently.
例えば焦点距離ｆが３０ｍｍのＳｉのレンズを用いると
、赤外線の短波長（５μｍ）に於けるレンズの屈折率は
３．４２２１で、赤外線の長波長（１０μｍ）に於ける
レンズの屈折率は３．４１７７より第（１）式により、
色収差Δｆ ＝５４．６μｍとなるのでｄの厚さは５４
．６１１ｍの厚さにする。For example, when using a Si lens with a focal length f of 30 mm, the refractive index of the lens at the short wavelength of infrared rays (5 μm) is 3.4221, and the refractive index of the lens at the long wavelength of infrared rays (10 μm) is 3. From .4177, according to equation (1),
Since the chromatic aberration Δf = 54.6 μm, the thickness of d is 54
．． The thickness will be 611m.
更にＨ記第２層の結晶層１３の表面より第１層の結晶層
１２の境界面１４に到達するまでメサ状にエツチングさ
れ、そのメサエッチングされた箇所には、絶縁膜１５で
被覆され、該メサの頂部１６とメサの底部１７は絶縁膜
１５が窓開きされてＮ型の不純物であるボロン（Ｂ）原
子がイオン注入されてＮ型層が形成され、赤外線の短波
長側に感度を有する第１のホトダイオードアレイ１８と
、赤外線の長波長側に感度を有する第２のホトダイオー
ドアレイ１９がそれぞれ形成される。Furthermore, a mesa-like etching is performed from the surface of the second crystal layer 13 in the section H until reaching the boundary surface 14 of the first crystal layer 12, and the mesa-etched area is covered with an insulating film 15. The insulating film 15 is opened at the top 16 and bottom 17 of the mesa, and boron (B) atoms, which are N-type impurities, are ion-implanted to form an N-type layer, which increases sensitivity to the short wavelength side of infrared rays. A first photodiode array 18 having a photodiode array 18 and a second photodiode array 19 having a sensitivity on the long wavelength side of infrared rays are formed, respectively.
そして各々のホトダイオードアレイ１８と、ホトダイオ
ードアレイ１９にＩｎ金属バンプ２１が接続され、この
金属バンプ２１がＳｉ基板に形成されている電荷結合装
置２２の入力ダイオードに接続されている。An In metal bump 21 is connected to each photodiode array 18 and photodiode array 19, and this metal bump 21 is connected to an input diode of a charge coupled device 22 formed on a Si substrate.
このような赤外線検知装置のＣｄＴｅ基板１１の裏面側
より前記したレンズ２を介して赤外線を入射させる。そ
して５μｍの短波長帯の赤外線を入射させた時のレンズ
の屈折率値の変動による色収差で決まる第１の焦点７の
位置を基板と第１の結晶層の境界面２０に合致させる。Infrared rays are incident on the back side of the CdTe substrate 11 of such an infrared detection device through the lens 2 described above. Then, the position of the first focal point 7 determined by the chromatic aberration caused by the variation in the refractive index value of the lens when infrared rays in the short wavelength band of 5 μm are incident is made to coincide with the boundary surface 20 between the substrate and the first crystal layer.
すると５μｍの波長の光はＣｄＴｅ基板１１を透過した
後、前記境界面２０に導入されて第１の結晶層１２内で
キャリアと成って第１のホトダイオードアレイ１８でそ
のキャリアが光電変換されてその赤外線像が検知される
。Then, after the light with a wavelength of 5 μm passes through the CdTe substrate 11, it is introduced into the boundary surface 20 and becomes carriers in the first crystal layer 12, and the carriers are photoelectrically converted in the first photodiode array 18. An infrared image is detected.
また赤外線の内、長波長帯の赤外線は基板１１と第１層
の結晶層１２を透過して第１層の結晶層１２と第２層の
結晶層１３の境界面１４より第２層の結晶層１３内に入
り、この結晶層１３内で光電変換された後、第２のホト
ダイオードアレイ１９で検知される。このようにしてホ
トダイオードアレイで検知された信号をインジウム金属
バンプ２１を用いて電荷結合装置２２の入力ダイオード
に導入し、長波長帯の信号および短波長帯側の信号を転
送電極で時系列的に転送して信号処理する。Furthermore, among the infrared rays, infrared rays in the long wavelength band pass through the substrate 11 and the first crystal layer 12 and pass through the interface 14 between the first crystal layer 12 and the second crystal layer 13 to the second crystal layer. After entering the layer 13 and being photoelectrically converted within the crystal layer 13, it is detected by the second photodiode array 19. The signals detected by the photodiode array in this way are introduced into the input diode of the charge-coupled device 22 using the indium metal bump 21, and the signals in the long wavelength band and the signals in the short wavelength band are transferred in time series by the transfer electrode. Transfer and process signals.
このようにすれば、短波長帯の赤外線と長波長帯の赤外
線が一枚の基板上に形成された一個の赤外線検知装置に
よって検知され、従来のように２個の赤外線検知装置を
必要としなくなり赤外線検知システムが簡単な装置構成
となる。In this way, infrared rays in the short wavelength band and infrared rays in the long wavelength band are detected by one infrared detection device formed on a single substrate, eliminating the need for two infrared detection devices as in the past. The infrared detection system has a simple device configuration.
また上記信号処理装置で処理された信号をＡＤ変換回路
でＡＤ変換し、ＣＲＴに赤外線画像を形成するようにし
ても良い。Further, the signal processed by the signal processing device may be subjected to AD conversion by an AD conversion circuit, and an infrared image may be formed on a CRT.
〔発明の効果］
以−ヒの説明から明らかなように本発明によれば、短波
長帯と長波長帯との二液長帯の赤外線を検知する検査シ
ステムが、赤外線を集光するレンズと、赤外線検知セン
サと該検知センサで得られた信号を処理する信号処理装
置がそれぞれ１個で構成されるため複雑な光学系を必要
とせず、簡単な赤外線検知システムで二液長帯の赤外線
が検知できる効果がある。[Effects of the Invention] As is clear from the explanations given below, according to the present invention, an inspection system that detects infrared rays in a two-liquid long band of a short wavelength band and a long wavelength band uses a lens that condenses the infrared rays. Since it consists of one infrared detection sensor and one signal processing device that processes the signal obtained by the detection sensor, a simple infrared detection system does not require a complex optical system and can detect two-liquid long band infrared rays. It has a detectable effect.
第１図は本発明の赤外線検知装置の原理図、第２図は本
発明の赤外線検知装置の一実施例を示す断面図である。FIG. 1 is a principle diagram of an infrared detection device of the present invention, and FIG. 2 is a sectional view showing an embodiment of the infrared detection device of the present invention.
図に於いて、
１は赤外線透過基板、２はレンズ、３は第１の結晶層、
４は第１の赤外線検知素子、５は第２の結晶層、６は第
２の赤外線検知素子、７は第１の焦点、８は第２の焦点
、１１はＣｄＴｅ基板、１２は第１屑Ｐ型１１ｇ＋−＋
ｔ ＣｄＸ Ｔｅ結晶（ｘ＝０．３）、１３は第２屠Ｐ
型１１ｇ＋−ｘ ＣｄＸＴｅ結晶（ｘ＝０．２）、１４
．２０は境界面、１５は絶縁膜、１６はメサ頂部、１７
はメサ底部、１８は第１のホトダイオードアレイ、１９
は第２のホトダイオードアレイ、２１はＩｎ金属ハンプ
、２２は電荷結合装置を示す。In the figure, 1 is an infrared transmitting substrate, 2 is a lens, 3 is a first crystal layer,
4 is a first infrared sensing element, 5 is a second crystal layer, 6 is a second infrared sensing element, 7 is a first focal point, 8 is a second focal point, 11 is a CdTe substrate, 12 is a first scrap P type 11g+-+
t CdX Te crystal (x = 0.3), 13 is the second slaughter P
Type 11g+-x CdXTe crystal (x=0.2), 14
．． 20 is a boundary surface, 15 is an insulating film, 16 is a mesa top, 17
is the bottom of the mesa, 18 is the first photodiode array, 19
21 is a second photodiode array, 21 is an In metal hump, and 22 is a charge-coupled device.
＄４”）１ ／ｌ ｆ’ 、７＃？’Ａ 孜夫ｖｈｉｌ
／ｌ／ｌ ＫＧり第１図
ント）ｆｌ１１？月褐ガフＬｒ字不虻欠ロ茗！ｔの一究
メ台づンゴのＩ牟面図第２図$4”) 1 /l f', 7#?'A Keio vhil
/l/l KGri 1st) fl11? Tsuki-brown gaff Lr-shaped fujitsu ro-mei! Fig.2
Claims (2)
ズ（２）と、前記赤外線透過基板上に形成され、赤外線
の短波長帯に感度を有し、前記短波長帯の赤外線の波長
と検知すべき長波長帯の赤外線の波長とで決定される前
記レンズの色収差の値に略等しい厚さを有する第１の結
晶層（３）に形成された第１の赤外線検知素子（４）と
、前記検知すべき赤外線の長波長帯に感度を有する第２
の結晶層（５）に形成された第２の赤外線検知素子（６
）とよりなり、前記レンズ（２）を介して基板（１）の
裏面側より短波長帯と長波長帯の赤外線を入射し、前記
短波長帯の赤外線による色収差で決定される前記レンズ
の第１の焦点（７）を前記基板と第１の結晶層の境界面
に合致させるとともに、前記赤外線の長波長帯の色収差
によって決定されるレンズの第２の焦点（８）を、前記
第１および第２の結晶層の境界面にそれぞれ合致させ、
前記短波長帯の赤外線を前記第１の赤外線検知素子（４
）で、前記長波長帯の赤外線を第２の赤外線検知素子（
６）で検知することを特徴とする赤外線検知装置。(1) A lens (2) installed on the back side of the infrared transmitting substrate (1) and a lens (2) formed on the infrared transmitting substrate, having sensitivity to a short wavelength band of infrared rays, and having a wavelength of infrared rays in the short wavelength band. a first infrared sensing element (4) formed in a first crystal layer (3) having a thickness approximately equal to the value of chromatic aberration of the lens determined by and a second one having sensitivity to the long wavelength band of the infrared rays to be detected.
A second infrared sensing element (6) formed in the crystal layer (5) of
), the infrared rays in the short wavelength band and the long wavelength band are incident from the back side of the substrate (1) through the lens (2), and the infrared rays in the short wavelength band are determined by the chromatic aberration due to the infrared rays in the short wavelength band. The first focal point (7) of the lens is aligned with the interface between the substrate and the first crystal layer, and the second focal point (8) of the lens is determined by the chromatic aberration in the long wavelength band of the infrared rays. match the boundary surfaces of the second crystal layer, respectively,
The short wavelength band infrared rays are detected by the first infrared detection element (4
), the infrared rays in the long wavelength band are detected by a second infrared detection element (
6) An infrared detection device characterized by detecting.
）より第１の結晶層（３）に至って所定のパターンにメ
サエッチし、該メサの頂部の第２の結晶層（５）の表面
と、前記メサの底部の第１の結晶層（３）の底部に不純
物原子を導入してＰ−Ｎ接合を形成したことを特徴とす
る請求項１記載の赤外線検知装置。(2) a second crystal layer (5) formed on the substrate (1);
) to reach the first crystal layer (3) and mesa-etch into a predetermined pattern, and the surface of the second crystal layer (5) at the top of the mesa and the first crystal layer (3) at the bottom of the mesa are etched. 2. The infrared detection device according to claim 1, wherein impurity atoms are introduced into the bottom portion to form a PN junction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63218109A JPH0265181A (en) | 1988-08-30 | 1988-08-30 | Infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63218109A JPH0265181A (en) | 1988-08-30 | 1988-08-30 | Infrared detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0265181A true JPH0265181A (en) | 1990-03-05 |
Family
ID=16714770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63218109A Pending JPH0265181A (en) | 1988-08-30 | 1988-08-30 | Infrared detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0265181A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04260368A (en) * | 1990-10-17 | 1992-09-16 | Philips Gloeilampenfab:Nv | Infrared detection apparatus of a plurality of wavelengths |
| JPH07159717A (en) * | 1993-12-06 | 1995-06-23 | Toshiba Tesco Kk | Optical system uniaxial receiving system |
| JP2004095669A (en) * | 2002-08-29 | 2004-03-25 | Toyota Motor Corp | Photoelectric conversion element |
| JP2004103649A (en) * | 2002-09-05 | 2004-04-02 | Toyota Motor Corp | Photoelectric conversion element for thermooptical power generation |
| WO2004047178A1 (en) * | 2002-11-18 | 2004-06-03 | Hamamatsu Photonics K.K. | Backside-illuminated photodiode array, method for manufacturing same, and semiconductor device |
| KR100437150B1 (en) * | 2001-12-12 | 2004-06-25 | 주식회사 케이이씨 | method for fabricating bumps in infrared detector and bump structure |
| JP2007184603A (en) * | 2005-12-29 | 2007-07-19 | Magnachip Semiconductor Ltd | Cmos image sensor with backside illumination structure |
| US7810740B2 (en) | 2002-11-18 | 2010-10-12 | Hamamatsu Photonics K.K. | Back illuminated photodiode array, manufacturing method and semiconductor device thereof |
-
1988
- 1988-08-30 JP JP63218109A patent/JPH0265181A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04260368A (en) * | 1990-10-17 | 1992-09-16 | Philips Gloeilampenfab:Nv | Infrared detection apparatus of a plurality of wavelengths |
| JPH07159717A (en) * | 1993-12-06 | 1995-06-23 | Toshiba Tesco Kk | Optical system uniaxial receiving system |
| KR100437150B1 (en) * | 2001-12-12 | 2004-06-25 | 주식회사 케이이씨 | method for fabricating bumps in infrared detector and bump structure |
| JP2004095669A (en) * | 2002-08-29 | 2004-03-25 | Toyota Motor Corp | Photoelectric conversion element |
| JP2004103649A (en) * | 2002-09-05 | 2004-04-02 | Toyota Motor Corp | Photoelectric conversion element for thermooptical power generation |
| WO2004047178A1 (en) * | 2002-11-18 | 2004-06-03 | Hamamatsu Photonics K.K. | Backside-illuminated photodiode array, method for manufacturing same, and semiconductor device |
| JPWO2004047178A1 (en) * | 2002-11-18 | 2006-03-23 | 浜松ホトニクス株式会社 | Back-illuminated photodiode array, manufacturing method thereof, and semiconductor device |
| CN100446261C (en) * | 2002-11-18 | 2008-12-24 | 浜松光子学株式会社 | Back illuminated photodiode array, manufacturing method and semiconductor device thereof |
| JP4482455B2 (en) * | 2002-11-18 | 2010-06-16 | 浜松ホトニクス株式会社 | Back-illuminated photodiode array, manufacturing method thereof, and semiconductor device |
| US7810740B2 (en) | 2002-11-18 | 2010-10-12 | Hamamatsu Photonics K.K. | Back illuminated photodiode array, manufacturing method and semiconductor device thereof |
| JP2007184603A (en) * | 2005-12-29 | 2007-07-19 | Magnachip Semiconductor Ltd | Cmos image sensor with backside illumination structure |
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