JPS617629A - Ion beam exposing and developing process - Google Patents

Ion beam exposing and developing process

Info

Publication number
JPS617629A
JPS617629A JP59128233A JP12823384A JPS617629A JP S617629 A JPS617629 A JP S617629A JP 59128233 A JP59128233 A JP 59128233A JP 12823384 A JP12823384 A JP 12823384A JP S617629 A JPS617629 A JP S617629A
Authority
JP
Japan
Prior art keywords
ion beam
organic film
exposure
development
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59128233A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP59128233A priority Critical patent/JPS617629A/en
Publication of JPS617629A publication Critical patent/JPS617629A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0279—Ionlithographic processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To perform exposure and development simultaneously by means of removing an organic film on a substrate as shown in figure. CONSTITUTION:The surface of organic film 2 coated on a substrate 1 is supplied with O2 while being irradiated by O ion or Ga ion. Through these procedures, a groove 3 is formed as shown in figure by means of supplying the organic film 2 with O ion for oxidation making it feasible to perform exposure and development simultaneously.

Description

【発明の詳細な説明】 〔技術分野〕 本発ＦｉＡはイオン・ビーム露光・処理法に関する。[Detailed description of the invention] 〔Technical field〕 This FiA relates to ion beam exposure and processing methods.

〔従来技術〕[Prior art]

従来、イオン・ビーム露光・処理法に於ては、有機レジ
スト膜にイオン・ビームを照射して露光し、その後、ウ
ェット現像を施すかあるいけドライ現像を施すとしても
、基板全面をプラズマ中に晒すという方式か用いられて
いた。Conventionally, in the ion beam exposure and processing method, an organic resist film is irradiated with an ion beam for exposure, and then the entire surface of the substrate is immersed in plasma, even if wet development or dry development is performed. A method of exposure was used.

〔目的〕〔the purpose〕

本発明け、かかる従来技術に代えて、有機膜のイオン・
ビームによる露光と現像を同時に行なう方法を提供する
ことを目的とする。The present invention provides an organic film with ions and
It is an object of the present invention to provide a method for simultaneously performing beam exposure and development.

〔概要〕〔overview〕

上記目的を達成する為の本発明の基本的な構成は、イオ
ン・ビーム露光・塑像法に於て、基板上には有機膜が形
成され、該有機膜を酸素イオンにより図形状に除去する
ことを特徴とする。The basic structure of the present invention to achieve the above object is that an organic film is formed on a substrate in the ion beam exposure/plastic method, and the organic film is removed in a pattern using oxygen ions. It is characterized by

〔実施例〕〔Example〕

以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.

第１図は本発明の一実施例を示す模式図である。FIG. 1 is a schematic diagram showing an embodiment of the present invention.

すなわち、基板１に塗布これた有機膜２の表面に酸素イ
オン・ビーム４または侃イオン・ビーム等を照射しなが
ら基板表面へ酸素ガスをノズルにより供給しながら酸表
イオン・ビーム４を発生させて照射することにより、有
機膜２を酸素イオンにより酸化することにより、有機膜
２に溝３を図形状に形成し、露光と現像を同時に行なう
ことができる。That is, while irradiating the surface of the organic film 2 coated on the substrate 1 with an oxygen ion beam 4 or a foreign ion beam, an acid surface ion beam 4 is generated while supplying oxygen gas to the substrate surface through a nozzle. By irradiating the organic film 2, the organic film 2 is oxidized by oxygen ions, thereby forming grooves 3 in a figure shape in the organic film 2, and exposure and development can be performed simultaneously.

尚、本発明はオート・レジスト膜のみならず、他の高分
子膜にも有効である。Note that the present invention is effective not only for auto-resist films but also for other polymer films.

〔効果〕〔effect〕

本発明け、図形状に露光と現像が同時にできるため、イ
オン・ビーム加工における露光処理を工程数が少なくよ
り効率的にできる事及び露光・現像処理がより高精度で
できる事等の効果がある。With the present invention, since exposure and development can be performed simultaneously on a figure, there are effects such as the exposure process in ion beam processing can be performed more efficiently with fewer steps, and the exposure and development process can be performed with higher precision. .

更に本発明は、機能有機膜（記憶機能やスイッチ機能あ
るいけ感光や、半導体機能）の直接露光現像にも有効で
あり、バイオニクスあるいけバイオチップに用いられる
有機膜からなるラングミュア膜の露光・現像等に活用で
きる効果がある。Furthermore, the present invention is also effective for direct exposure development of functional organic films (memory function, switch function, photosensitivity, semiconductor function), and is effective for direct exposure and development of Langmuir films consisting of organic films used in bionics and biochips. It has an effect that can be used for developing etc.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例を示すイオン・ビーム露光・
現像処理法の模式図である。 １・・・・・・基板　　　２・・・・・・有機膜３・・
・・・・溝　　　　　４・・・・・・イオンｅビーム以
　　上FIG. 1 shows an ion beam exposure system showing an embodiment of the present invention.
FIG. 2 is a schematic diagram of a development processing method. 1...Substrate 2...Organic film 3...
...Groove 4...Ion e-beam or higher

Claims (1)

【特許請求の範囲】[Claims] 基板上には有機膜が形成され、該有機膜を酸素イオン・
ビームにより図形状に除去することを特徴とするイオン
・ビーム露光現像法。An organic film is formed on the substrate, and the organic film is exposed to oxygen ions.
An ion beam exposure and development method that uses a beam to remove pattern shapes.
JP59128233A 1984-06-21 1984-06-21 Ion beam exposing and developing process Pending JPS617629A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59128233A JPS617629A (en) 1984-06-21 1984-06-21 Ion beam exposing and developing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59128233A JPS617629A (en) 1984-06-21 1984-06-21 Ion beam exposing and developing process

Publications (1)

Publication Number Publication Date
JPS617629A true JPS617629A (en) 1986-01-14

Family

ID=14979783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59128233A Pending JPS617629A (en) 1984-06-21 1984-06-21 Ion beam exposing and developing process

Country Status (1)

Country Link
JP (1) JPS617629A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5069104A (en) * 1989-01-19 1991-12-03 Yamaha Corporation Automatic key-depression indication apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5069104A (en) * 1989-01-19 1991-12-03 Yamaha Corporation Automatic key-depression indication apparatus

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