JPS6161419A - Pattern alignment method - Google Patents

Pattern alignment method

Info

Publication number
JPS6161419A
JPS6161419A JP59183392A JP18339284A JPS6161419A JP S6161419 A JPS6161419 A JP S6161419A JP 59183392 A JP59183392 A JP 59183392A JP 18339284 A JP18339284 A JP 18339284A JP S6161419 A JPS6161419 A JP S6161419A
Authority
JP
Japan
Prior art keywords
alignment mark
alignment
pattern
error
mark
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59183392A
Other languages
Japanese (ja)
Inventor
Hitomi Ogino
荻野　人美
Masamichi Manabe
真鍋　昌道
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP59183392A priority Critical patent/JPS6161419A/en
Publication of JPS6161419A publication Critical patent/JPS6161419A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To decide the state of the relative positional precision of the first and second alignment marks, which is beyond the allowable error X, in two stages and to enable to improve the workability for pattern alignment by a method wherein the first alignment mark, which is deleted its four rectangular top parts in a rectangle respectively and is formed into a cross shape, is combined with the second alignment mark, which is formed into a rectangular frame form in such a size that the second alignment mark encircles the outer periphery of the first alignment mark, in such a way that the first alignment mark is made to position on the center of the second alignment mark. CONSTITUTION:A first alignment mark 10 is deleted its four rectangular top parts in a rectangle respectively and is formed into a cross shape. A second alignment mark 20 is formed into a rectangular frame from in such a size that the mark 20 can encircle the outer periphery of the first alignment mark 10. A size (c) is set in such a way as to correspond to an error Y that one half of a difference between a size (b) and the size (c) is beyond the conventional allowable error X. When the relative positional precision of the patterns of the two marks is within the allowable error X and is the best, both marks 10 and 20 are transferred on the wafer in such a way that the first alignment mark 10 is made to position on the center of the second alignment mark 20. Then, in case the positional precision is beyond the allowable error X, the precision is decided to be one not beyond the error Y when the region shown by (d) is leaving between the first and second alignment marks 10 and 20, and when the region is not leaving, the positional recision is decided to be one beyond the error Y.

Description

【発明の詳細な説明】 技術分野 本発明は、半導体装置の製造工程におけるパターン合わ
せ方法に関する。DETAILED DESCRIPTION OF THE INVENTION TECHNICAL FIELD The present invention relates to a pattern matching method in a semiconductor device manufacturing process.

背ＪＬＬ頂− 半導体装置の’Ｉ造工程では、数回のフォトエツチング
工程を行なうため、マスクのパターンと半導体基板（以
下ウェーハと称する）上のパターンとの相対的な位置を
合わビる必要がある。このパターン合わせの従来例を第
１図に示１゛。Back JLL Top - In the semiconductor device fabrication process, several photo-etching processes are performed, so it is necessary to align the relative positions of the mask pattern and the pattern on the semiconductor substrate (hereinafter referred to as wafer). be. A conventional example of this pattern matching is shown in FIG.

第１図において、あるマスク（層）には所定のパターン
と共に第１図（Ａ）に示す毎き矩形形状の第１の合わせ
マーク１も形成されており、このマスクのパターンがウ
ェーハに転写されるときには、第１の合ね旭マーク１も
同時に転写される。In FIG. 1, a certain mask (layer) is formed with a predetermined pattern as well as a rectangular first alignment mark 1 as shown in FIG. 1(A), and the pattern of this mask is transferred onto the wafer. When transferring, the first alignment mark 1 is also transferred at the same time.

このウェーハ上に更に、他のマスクに形成されたパター
ンを転写１Ｊ−るに際しては、このマスクには第１図（
Ｂ）に示Ｊ′毎き矩形枠状の第２の合わせマーク２が形
成されており、この第２の合わせマー９２とウェーハ上
の第１の合わせマー９１との位置合わぜをすることによ
ってウェーハ上のパターンと上記他のマスクのパターン
との相対−的な位置合わせが行なわれるのである。When further transferring patterns formed on other masks onto this wafer, this mask is used as shown in FIG.
As shown in B), rectangular frame-shaped second alignment marks 2 are formed every J', and by aligning this second alignment mark 92 with the first alignment mark 91 on the wafer, Relative alignment is performed between the pattern on the wafer and the pattern on the other mask.

第１の合わせマーク１は通常、上記マスクに形成された
複数のパターン群に対応して複数個設けられている。そ
して、この複数のパターン群に対応したパターン形状を
有する他の複数のマスクを、上記パターン合わせ方法に
より複数のパターン群の各々に合わせることによって全
体の相対的にｇ位置箱度を保証している。２回の別々の
マスク（層）の転写により得られたウェーハ上の形状は
第１図（Ｃ）の如くなり、この形状より相対的な位置粘
度の情報を得ることができるのである。例えば、相対的
な位置精度が悪い場合は、第３図（Ａ）に示すような形
状が得られることになる。A plurality of first alignment marks 1 are usually provided corresponding to a plurality of pattern groups formed on the mask. Then, a plurality of other masks having pattern shapes corresponding to the plurality of pattern groups are matched to each of the plurality of pattern groups by the pattern matching method described above, thereby ensuring the relative g-position boxiness of the whole. . The shape on the wafer obtained by transferring two separate masks (layers) is as shown in FIG. 1(C), and information on relative positional viscosity can be obtained from this shape. For example, if the relative positional accuracy is poor, a shape as shown in FIG. 3(A) will be obtained.

第１及び第２の合わせマークの寸法は、一般に、必要合
わせ精度（許容誤差Ｘ）に応じて設定され、例えば第１
図における寸法ａとｂとの差の１／２が許容誤差Ｘに等
しくなるように設定される。その結果、第１の合わせマ
ーク１が第２の合わｔｊマーク２の枠内にある場合に、
合わせ精度が許容誤差Ｘ内であり、相対的位置精度が満
足されたという情報が容易に得られることになる。The dimensions of the first and second alignment marks are generally set according to the required alignment accuracy (tolerance X).
It is set so that 1/2 of the difference between dimensions a and b in the figure is equal to the tolerance X. As a result, when the first alignment mark 1 is within the frame of the second alignment mark 2,
Information that the alignment accuracy is within the tolerance X and that the relative positional accuracy is satisfied can be easily obtained.

ところが、第１及び第２の合わせマークが矩形形状のも
のと矩形枠状のものとの組合わせからなる従来方法では
、相対的な位置精度が悪化した場合に許容誤差Ｘより悪
化したという事実しかわからなく、判定結果として許容
誤差Ｘ内か否かの２つの情報しか得られなかった。However, in the conventional method in which the first and second alignment marks are a combination of a rectangular shape and a rectangular frame shape, only the fact that the relative positional accuracy deteriorates is worse than the tolerance X. I had no idea, and could only obtain two pieces of information as a judgment result: whether or not it was within the allowable error X.

発明の概要 本発明は、上述した点に鑑みなされたもので、相対的な
位置精度が許容誤差Ｘ外に悪化した状態を２段階に判定
可能とづ“ることにより、パターン合わせの作業性を向
上せしめたパターン合わせ方法を提供することを目的と
する。Summary of the Invention The present invention has been made in view of the above-mentioned points, and improves the workability of pattern matching by making it possible to determine in two stages the state in which the relative positional accuracy has deteriorated beyond the tolerance X. The purpose is to provide an improved pattern matching method.

本発明によるパターン合わせ方法は、第１及び第２の合
わせマークを、矩形の４つの頂部を削除した十字形形状
のものとその外周を囲む大きさの矩形枠状のものとの組
合わせとしたことを特徴としている。In the pattern matching method according to the present invention, the first and second matching marks are a combination of a cross-shaped mark with the four tops of the rectangle removed and a rectangular frame-shaped mark of a size that surrounds the outer periphery of the cross-shaped mark. It is characterized by

裏−１Ｌ」１ 以下、本発明の実施例を図に基づいて詳細に説明する。Back - 1L" 1 Hereinafter, embodiments of the present invention will be described in detail based on the drawings.

第２図において、第１の合わせマーク１０は図＜Ａ＞に
丞す如く矩形の４つの頂部を矩形に削除した十字形に形
成され、第２の合わせマーク２゜は図ＣＢ）に示す如く
、従来のものと同様に、第１の合わせマーク１０の外周
を囲む大ぎさの矩形枠状に形成されている。第１の合わ
せマーク１０において、寸法ａは従来と同じであり、寸
法Ｃは、寸法すとＣとの差の１／２が従来の許容誤差Ｘ
より悪い、ある誤差Ｙに対応するように設定される。In Fig. 2, the first alignment mark 10 is formed in the shape of a cross with the four tops of a rectangle removed as shown in Fig. <A>, and the second alignment mark 2° is formed as shown in Fig. CB). , similar to the conventional one, is formed in the shape of a large rectangular frame surrounding the outer periphery of the first alignment mark 10. In the first alignment mark 10, the dimension a is the same as the conventional one, and the dimension C is 1/2 of the difference between the dimension C and the conventional tolerance X.
It is set to correspond to a certain error Y that is worse.

かかる形状の第１．第２の合わせマーク１０゜２０を用
いてパターン合わせを行なう場合において、２つのマス
ク（層）のパターンの・相対的な位・　置精度が許容誤
差Ｘ内でかつ最良の場合、第２図（Ｃ）に示す如く、第
１の合わせマーク１ｏが第２の合わせマーク２０の中央
に位置するように両マーク１０．２０がウェーハ上に転
写される。次に、位置精度が許容誤差Ｘより悪くなった
場合において、第１の合わせマーク１０と第２の含わヒ
゛マーク２０との間に第３図（Ｂ）に例えばｄで示され
るようなｆｒ４域が残っていれば、精度が誤差Ｙより良
いと判定され、残っていなければ、誤差Ｙより悪いと判
定されるのである。すなわち、許容誤着Ｘより悪い場合
には、従来はただ悪いとの判定しかできなかったが、本
発明によれば、更に誤差Ｙより良いか否かの判定もでき
るのである。The first of such shapes. When pattern alignment is performed using the second alignment mark 10°20, if the relative positional accuracy of the patterns of the two masks (layers) is within the tolerance X and is best, then As shown in C), both marks 10 and 20 are transferred onto the wafer so that the first alignment mark 1o is located in the center of the second alignment mark 20. Next, when the positional accuracy becomes worse than the tolerance If , the accuracy is determined to be better than the error Y, and if no, the accuracy is determined to be worse than the error Y. In other words, if the error is worse than the allowable error X, conventionally only a judgment can be made that it is bad, but according to the present invention, it is also possible to judge whether the error is better than the error Y.

なお、上記実施例では、十字形の合わせマーク１０を先
にウェーハ上に転写するようにしたが、矩形枠状の合わ
ぜマーク２０を先に転写するようにしても、上記実施例
と′同様の効果を奏する。In the above embodiment, the cross-shaped alignment mark 10 is transferred onto the wafer first, but even if the rectangular frame-shaped alignment mark 20 is transferred first, the result is the same as in the above embodiment. It has the effect of

１１悲１１ 以上説明したように、本発明によれば、第１及び第２の
合わせマークを、矩形の４つの頂部を削除した十字形形
状のしのとその外周を囲む大きさの矩形枠状のものとの
に１合わせとしたので、相対的な位置精度が許容誤差Ｘ
外に悪化した状態を２段階に判定することができ、パタ
ーン合わせの作業性をより向上できることになる。11 Sad 11 As explained above, according to the present invention, the first and second alignment marks are formed in the shape of a cross shape with the four tops of the rectangle removed, and a rectangular frame size that surrounds the outer periphery of the cross shape. Because it is aligned with the other object, the relative positional accuracy is within the tolerance
It is possible to judge the condition that has worsened in two stages, and the workability of pattern matching can be further improved.

【図面の簡単な説明】[Brief explanation of drawings]

第１図（Ａ）〜（Ｃ）は従来例によるマーク形状を示す
図、第２図（Ａ）〜（Ｃ）は本発明によるマーク形状を
承り図、第３図は位百錆度が悪化した場合にＪ３　ｆプ
る第１及び第２の合わせマークの相対的位置関係を承り
図であり、’（Ａ＞は従来の場合、（Ｂ）は本発明の場
合をそれぞれ示している。 主要部分の符号の説明Figures 1 (A) to (C) are diagrams showing the mark shape according to the conventional example, Figures 2 (A) to (C) are diagrams showing the mark shape according to the present invention, and Figure 3 is a diagram showing a worsening of the degree of rust. This is a diagram showing the relative positional relationship of the first and second alignment marks when J3 f is pressed. Explanation of part symbols

Claims (1)

【特許請求の範囲】[Claims] 　第１のマスクに形成されたパターンと共に第１の合わ
せマークが転写された半導体基板上に、更に第２のマス
クに形成されたパターンを転写するに際し、前記第２の
マスクに形成された第２の合わせマークと前記第１の合
わせマークとの位置合わせをすることによって前記半導
体基板上のパターンと前記第２のマスクのパターンとの
相対的な位置合わせをなすパターン合わせ方法であって
、前記第１及び第２の合わせマークは、矩形の４つの頂
部を削除した十字形形状のものとその外周を囲む大きさ
の矩形枠状のものとの組合わせからなることを特徴とす
るパターン合わせ方法。When further transferring the pattern formed on the second mask onto the semiconductor substrate onto which the first alignment mark has been transferred together with the pattern formed on the first mask, the second alignment mark formed on the second mask is transferred. A pattern alignment method for relative alignment of a pattern on the semiconductor substrate and a pattern of the second mask by aligning an alignment mark with the first alignment mark, the method comprising: The pattern matching method is characterized in that the first and second matching marks are a combination of a cross-shaped rectangle with four tops removed and a rectangular frame-like size that surrounds the outer periphery of the cross-shaped mark.
JP59183392A 1984-08-31 1984-08-31 Pattern alignment method Pending JPS6161419A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59183392A JPS6161419A (en) 1984-08-31 1984-08-31 Pattern alignment method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59183392A JPS6161419A (en) 1984-08-31 1984-08-31 Pattern alignment method

Publications (1)

Publication Number Publication Date
JPS6161419A true JPS6161419A (en) 1986-03-29

Family

ID=16134969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59183392A Pending JPS6161419A (en) 1984-08-31 1984-08-31 Pattern alignment method

Country Status (1)

Country Link
JP (1) JPS6161419A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2877767A1 (en) * 2004-10-18 2006-05-12 Accent Optical Tech Inc RECOVERY METROLOGY MARK AND METHOD OF MEASURING RECOVERY ERROR IN A SEMICONDUCTOR DEVICE
US8006214B2 (en) 2008-03-12 2011-08-23 International Business Machines Corporation Exact geometry operations on shapes using fixed-size integer coordinates

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2877767A1 (en) * 2004-10-18 2006-05-12 Accent Optical Tech Inc RECOVERY METROLOGY MARK AND METHOD OF MEASURING RECOVERY ERROR IN A SEMICONDUCTOR DEVICE
EP1817544A2 (en) * 2004-10-18 2007-08-15 Accent Optical Technologies, Inc. Overlay measurement target
EP1817544A4 (en) * 2004-10-18 2011-04-27 Accent Optical Technologies Nanometrics Inc Overlay measurement target
US8006214B2 (en) 2008-03-12 2011-08-23 International Business Machines Corporation Exact geometry operations on shapes using fixed-size integer coordinates

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